CN102362223A - 光学成像写入*** - Google Patents
光学成像写入*** Download PDFInfo
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- CN102362223A CN102362223A CN2010800128791A CN201080012879A CN102362223A CN 102362223 A CN102362223 A CN 102362223A CN 2010800128791 A CN2010800128791 A CN 2010800128791A CN 201080012879 A CN201080012879 A CN 201080012879A CN 102362223 A CN102362223 A CN 102362223A
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Images
Classifications
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
Claims (34)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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US16228609P | 2009-03-21 | 2009-03-21 | |
US61/162,286 | 2009-03-21 | ||
US12/475,114 US8670106B2 (en) | 2008-09-23 | 2009-05-29 | Optical imaging writer system |
US12/475,114 | 2009-05-29 | ||
PCT/US2010/027550 WO2010111074A1 (en) | 2009-03-21 | 2010-03-16 | An optical imaging writer system |
Publications (2)
Publication Number | Publication Date |
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CN102362223A true CN102362223A (zh) | 2012-02-22 |
CN102362223B CN102362223B (zh) | 2014-06-18 |
Family
ID=42781389
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080012879.1A Active CN102362223B (zh) | 2009-03-21 | 2010-03-16 | 光学成像写入*** |
Country Status (3)
Country | Link |
---|---|
US (2) | US8670106B2 (zh) |
CN (1) | CN102362223B (zh) |
WO (1) | WO2010111074A1 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103901730A (zh) * | 2012-12-28 | 2014-07-02 | 上海微电子装备有限公司 | 曝光装置及曝光方法 |
CN108681213A (zh) * | 2018-05-14 | 2018-10-19 | 中山新诺科技股份有限公司 | 数字化光刻***和方法 |
CN108965725A (zh) * | 2017-05-17 | 2018-12-07 | 力晶科技股份有限公司 | 影像亮度重配模块及影像亮度重配方法 |
CN113703290A (zh) * | 2021-09-06 | 2021-11-26 | 深圳市先地图像科技有限公司 | 一种激光成像设备以及激光成像控制方法 |
TWI793537B (zh) * | 2021-02-26 | 2023-02-21 | 寶元數控股份有限公司 | 板材的影像擷取方法及裝置 |
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US9025136B2 (en) * | 2008-09-23 | 2015-05-05 | Applied Materials, Inc. | System and method for manufacturing three dimensional integrated circuits |
US9507271B1 (en) * | 2008-12-17 | 2016-11-29 | Applied Materials, Inc. | System and method for manufacturing multiple light emitting diodes in parallel |
KR101059811B1 (ko) * | 2010-05-06 | 2011-08-26 | 삼성전자주식회사 | 마스크리스 노광 장치와 마스크리스 노광에서 오버레이를 위한 정렬 방법 |
KR20110132127A (ko) * | 2010-06-01 | 2011-12-07 | 삼성전자주식회사 | 노광 장치 및 이를 이용한 노광 방법 |
US9703207B1 (en) * | 2011-07-08 | 2017-07-11 | Kla-Tencor Corporation | System and method for reducing dynamic range in images of patterned regions of semiconductor wafers |
WO2014047415A1 (en) * | 2012-09-20 | 2014-03-27 | Intest Corporation | Apparatus and method for irradiating |
US20140199844A1 (en) * | 2013-01-15 | 2014-07-17 | Nikon Corporation | Array description system for large patterns |
US9128387B2 (en) * | 2013-05-14 | 2015-09-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Ultraviolet light emitting diode array light source for photolithography and method |
US9927723B2 (en) | 2015-03-24 | 2018-03-27 | Applied Materials, Inc. | Apparatus and methods for on-the-fly digital exposure image data modification |
KR20160115682A (ko) * | 2015-03-25 | 2016-10-06 | 삼성전자주식회사 | 대상에 대하여 공간적으로 가변하는 오토 포커싱을 가능하게 하는 방법 및 이를 이용하는 촬상 시스템 |
CN106502055B (zh) * | 2015-09-06 | 2019-04-19 | 中芯国际集成电路制造(上海)有限公司 | 光刻失焦的检测方法 |
US10031427B2 (en) | 2015-09-30 | 2018-07-24 | Applied Materials, Inc. | Methods and apparatus for vibration damping stage |
CA2924160A1 (en) * | 2016-03-18 | 2017-09-18 | Chaji, Reza | Maskless patterning |
WO2018184783A1 (en) * | 2017-04-06 | 2018-10-11 | Asml Netherlands B.V. | Lithographic method and apparatus |
US10416539B2 (en) | 2017-06-21 | 2019-09-17 | Dolby Laboratories Licensing Corporation | Spatial light modulator for reduction of certain order light |
DE102018102943B4 (de) * | 2018-02-09 | 2020-10-29 | Miva Technologies Gmbh | Verfahren zur Belichtung eines nicht ebenen Objekts, optische Komponente und Belichtungssystem |
US10761430B2 (en) | 2018-09-13 | 2020-09-01 | Applied Materials, Inc. | Method to enhance the resolution of maskless lithography while maintaining a high image contrast |
US10474041B1 (en) | 2019-02-04 | 2019-11-12 | Applied Materials, Inc. | Digital lithography with extended depth of focus |
US10599044B1 (en) | 2019-02-04 | 2020-03-24 | Applied Materials, Inc. | Digital lithography with extended field size |
US10809637B1 (en) * | 2019-05-30 | 2020-10-20 | Applied Materials, Inc. | Learning based digital corrections to compensate variations on lithography systems with multiple imaging units |
US11067899B1 (en) * | 2020-02-03 | 2021-07-20 | Vathys, Inc. | Scattering lithography |
CN112684861B (zh) * | 2020-12-25 | 2024-04-16 | 无锡影速半导体科技有限公司 | 一种数据处理***及方法 |
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2009
- 2009-05-29 US US12/475,114 patent/US8670106B2/en active Active
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2010
- 2010-03-16 CN CN201080012879.1A patent/CN102362223B/zh active Active
- 2010-03-16 WO PCT/US2010/027550 patent/WO2010111074A1/en active Application Filing
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2014
- 2014-03-10 US US14/203,168 patent/US9519226B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1695076A (zh) * | 2002-08-24 | 2005-11-09 | 无掩模平版印刷公司 | 连续地直接写的光刻技术 |
CN1573561A (zh) * | 2003-05-30 | 2005-02-02 | Asml控股股份有限公司 | 使用空间光调制器阵列的无掩模光刻***和方法 |
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Also Published As
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US20120264066A1 (en) | 2012-10-18 |
US8670106B2 (en) | 2014-03-11 |
WO2010111074A1 (en) | 2010-09-30 |
US20140192336A1 (en) | 2014-07-10 |
US9519226B2 (en) | 2016-12-13 |
CN102362223B (zh) | 2014-06-18 |
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