CN102355796A - 一种新型铝基板的制造方法 - Google Patents

一种新型铝基板的制造方法 Download PDF

Info

Publication number
CN102355796A
CN102355796A CN2011103109021A CN201110310902A CN102355796A CN 102355796 A CN102355796 A CN 102355796A CN 2011103109021 A CN2011103109021 A CN 2011103109021A CN 201110310902 A CN201110310902 A CN 201110310902A CN 102355796 A CN102355796 A CN 102355796A
Authority
CN
China
Prior art keywords
nano ceramics
withstand voltage
nano ceramic
insulation coating
coating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011103109021A
Other languages
English (en)
Inventor
欧阳伟
欧阳杰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Great Electronics (Xiamen) Co., Ltd.
Riyue Illumination Appliances Co., Ltd., Jiangse
Original Assignee
GREAT ELECTRONICS (XIAMEN) CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GREAT ELECTRONICS (XIAMEN) CO Ltd filed Critical GREAT ELECTRONICS (XIAMEN) CO Ltd
Priority to CN2011103109021A priority Critical patent/CN102355796A/zh
Publication of CN102355796A publication Critical patent/CN102355796A/zh
Priority to TW101130926A priority patent/TW201344707A/zh
Priority to PCT/CN2012/081579 priority patent/WO2013053277A1/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
    • H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/76—Crystal structural characteristics, e.g. symmetry
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/017—Glass ceramic coating, e.g. formed on inorganic substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Laminated Bodies (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)

Abstract

本发明公开一种新型铝基板的制造方法，在成型出铝层后，还包括在铝层上进行纳米陶瓷镀膜而形成纳米陶瓷绝缘镀膜层的工序，该纳米陶瓷绝缘镀膜层的厚度=铝基板耐压值/基本耐压值*纳米陶瓷绝缘镀膜层的单位厚度值,所述的纳米陶瓷绝缘镀膜层的单位厚度值指的是预先测得的一个基本耐压值所对应的纳米陶瓷绝缘镀膜层厚度值。本发明在通过在铝层上成型出纳米陶瓷绝缘镀膜层，从而能使得导电层的热量能直接通过纳米陶瓷绝缘镀膜层而传递给铝层而散发出去，如此能大大增加导热效果；并且由于该纳米陶瓷绝缘镀膜层是采用镀膜的方式实现地，其可以根据实际耐压需要而增加厚度，从而确保整个铝基板具有足够的耐压值，即具有安全性能上的保障。

Description

一种新型铝基板的制造方法
技术领域
本发明涉及电子零件导热和散热、半导体照明技术领域，更具体的说涉及一种新型铝基板的制造方法。
背景技术
铝基板为电子零件导热和散热技术中不可或缺组分，目前衡量铝基板质量高低的主要技术参数一般包括导热系数以及耐压值，导热系数高以及耐压值高通常都代表铝基板的性能越好。
如图1所示，其为传统铝基板9的剖视图，该铝基板9具有从表及里依次叠设的表面绝缘层91、导电层92、粘附绝缘层93、以及铝层94，该电子零件8可以与导电层92相连，该导电层92即为电路层，其上蚀刻形成有电路，该粘附绝缘层93则用于将导电层92粘附绝缘在铝层94上，该粘附绝缘层93则用于避免导电层92与铝层94之间的电性导通，该铝层94则主要用于起到提高散热效果的作用。
目前该粘附绝缘层93的一种方式是采用绝缘耐压材料制成，其与绝缘层之间的导热能力都很差，即无形中影响了铝层94对电子零件8的散热效果；由此，人们通过采用绝缘导热胶的方式，即在胶中添加金属粉末而增加导热效果，但其却会降低整个铝基板的耐压值。
针对如上问题，中国专利申请200610053598.6公开了铝基板磁控溅射金属化电路板及LED照明器件，其开发出的新技术为——对铝基板的表面进行绝缘氧化处理，并生成了具有电气绝缘性能的氧化层，从而通过该氧化层来实现导热绝缘的功能，但是由于其是采用表面氧化的方式，即其仅能对铝层中的孔隙进行填充而无法达到形成足够厚度，即其在耐压性能上仍然会存在缺陷。
有鉴于此，本发明人针对现有铝基板的上述缺陷深入研究，遂有本案产生。
发明内容
本发明的目的在于提供一种新型铝基板的制造方法，从而使得成型出来的铝基板能在散热效果以及耐压性能俱佳。
一种新型铝基板的制造方法，其中，在成型出铝层后，还包括在铝层上进行纳米陶瓷镀膜而形成纳米陶瓷绝缘镀膜层的工序，该纳米陶瓷绝缘镀膜层的厚度=铝基板耐压值/基本耐压值*纳米陶瓷绝缘镀膜层的单位厚度值,所述的纳米陶瓷绝缘镀膜层的单位厚度值指的是预先测得的一个基本耐压值所对应的纳米陶瓷绝缘镀膜层厚度值。
进一步，其在铝层的下端亦进行纳米陶瓷镀膜工序而形成第二纳米陶瓷绝缘镀膜层。
采用上述结构后，本发明涉及的一种新型铝基板的制造方法，其与现有技术相比，其在通过在铝层上成型出纳米陶瓷绝缘镀膜层，从而能使得导电层的热量能直接传递至纳米陶瓷绝缘镀膜层，该纳米陶瓷绝缘镀膜层再传递给铝层而散发出去，如此其导热性能不会因为粘附绝缘层而受到限制，即能大大增加导热效果；并且由于该纳米陶瓷绝缘镀膜层是采用镀膜的方式实现地，其可以根据实际耐压需要而增加厚度，从而确保整个铝基板具有足够的耐压值，即具有安全性能上的保障。
附图说明
图1为现有一种铝基板的结构剖视图；
图2为本发明涉及一种新型铝基板的制造方法所成型出一种具体铝基板的结构剖视图。
图中：
铝基板100               表面阻焊层1
导电层 2                 纳米陶瓷绝缘镀膜层3
铝层4                   第二纳米陶瓷绝缘镀膜层5
电子零件8               铝基板9
表面绝缘层91            导电层 92
粘附绝缘层 93            铝层94。
具体实施方式
为了进一步解释本发明的技术方案，下面通过具体实施例来对本发明进行详细阐述。
本发明涉及一种新型铝基板的制造方法，其相对于现有铝基板的成型方法不同之处在于：
在成型出铝层后，还包括在铝层上进行纳米陶瓷镀膜的工序，通过该镀膜工序从而能形成纳米陶瓷绝缘镀膜层，在实际镀膜时，需要根据当前铝基材的耐压值要求而电镀出相应厚度的纳米陶瓷绝缘镀膜层。该纳米陶瓷绝缘镀膜层的厚度=铝基板耐压值/基本耐压值*纳米陶瓷绝缘镀膜层的单位厚度值，所述的纳米陶瓷绝缘镀膜层的单位厚度值指的是预先测得的一个基本耐压值所对应的纳米陶瓷绝缘镀膜层厚度值。具体的，该纳米陶瓷绝缘镀膜层英文为Nano Ceramic Coating。
另外，为了进一步提高绝缘性能，其在铝层的下端亦进行纳米陶瓷镀膜工序而形成第二纳米陶瓷绝缘镀膜层。
这样，本发明与现有技术相比，其在通过在铝层上成型出纳米陶瓷绝缘镀膜层，从而能使得导电层的热量能直接传递至纳米陶瓷绝缘镀膜层，该纳米陶瓷绝缘镀膜层再传递给铝层而散发出去，如此其导热性能不会因为粘附绝缘层而受到限制，即能大大增加导热效果；并且由于该纳米陶瓷绝缘镀膜层是采用镀膜的方式实现地，其可以根据实际耐压需要而增加厚度，从而确保整个铝基板具有足够的耐压值，即具有安全性能上的保障。
如图2所示，其为本发明涉及的方法所成型出一种新型铝基板100的结构剖视图，其上并未给出电子零件连接于其上的示意，具体其可以参照图1的结构，其两者在电子零件与导电层2相连接处是采用同样的技术手段。
该新型铝基板100包括表面阻焊层1、导电层2、纳米陶瓷绝缘镀膜层3以及铝层4，该表面阻焊层1、导电层2、纳米陶瓷绝缘镀膜层3和铝层4由表及里依次设置，在铝层4上表面镀纳米陶瓷绝缘镀膜层3，在纳米陶瓷绝缘镀膜层的上表面形成为导电层2，导电层2上的表面阻焊层1工艺与其他现有铝基板相同，其可以实际情形而选择不设置，该纳米陶瓷绝缘镀膜层3的厚度=铝基板100耐压值/基本耐压值*纳米陶瓷绝缘镀膜层3的单位厚度值，所述的纳米陶瓷绝缘镀膜层3的单位厚度值指的是预先测得的一个基本耐压值所对应的纳米陶瓷绝缘镀膜层3厚度值。
具体地，该纳米陶瓷绝缘镀膜层3每微米厚度就具有基本耐压值17V，如此在实际设计时，如果当前使用条件需要耐压1500V，此时纳米陶瓷绝缘镀膜层3就需要被设置为90微米；如果当前使用条件需要耐压3000V时，此时纳米陶瓷绝缘镀膜层3就需要被设置为180微米；这样人们可以根据实际使用条件的要求而匹配性地设置该纳米陶瓷绝缘镀膜层3的厚度。
优选地，为了进一步确保绝缘性能，该新型铝基板100还包括第二纳米陶瓷绝缘镀膜层5，该第二纳米陶瓷绝缘镀膜层5位于铝层4的下端。
上述实施例和图式并非限定本发明的产品形态和式样，任何所属技术领域的普通技术人员对其所做的适当变化或修饰，皆应视为不脱离本发明的专利范畴。

Claims (2)

1.一种新型铝基板的制造方法，其特征在于，在成型出铝层后，还包括在铝层上进行纳米陶瓷镀膜而形成纳米陶瓷绝缘镀膜层的工序，该纳米陶瓷绝缘镀膜层的厚度=铝基板耐压值/基本耐压值*纳米陶瓷绝缘镀膜层的单位厚度值,所述的纳米陶瓷绝缘镀膜层的单位厚度值指的是预先测得的一个基本耐压值所对应的纳米陶瓷绝缘镀膜层厚度值。
2.如权利要求1所述的一种新型铝基板的制造方法，其特征在于，其在铝层的下端亦进行纳米陶瓷镀膜工序而形成第二纳米陶瓷绝缘镀膜层。
CN2011103109021A 2011-10-14 2011-10-14 一种新型铝基板的制造方法 Pending CN102355796A (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2011103109021A CN102355796A (zh) 2011-10-14 2011-10-14 一种新型铝基板的制造方法
TW101130926A TW201344707A (zh) 2011-10-14 2012-08-27 一種新型鋁基板的製造方法
PCT/CN2012/081579 WO2013053277A1 (zh) 2011-10-14 2012-09-19 一种新型铝基板的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011103109021A CN102355796A (zh) 2011-10-14 2011-10-14 一种新型铝基板的制造方法

Publications (1)

Publication Number Publication Date
CN102355796A true CN102355796A (zh) 2012-02-15

Family

ID=45579262

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011103109021A Pending CN102355796A (zh) 2011-10-14 2011-10-14 一种新型铝基板的制造方法

Country Status (3)

Country Link
CN (1) CN102355796A (zh)
TW (1) TW201344707A (zh)
WO (1) WO2013053277A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104812166A (zh) * 2015-05-15 2015-07-29 何忠亮 一种反光导热金属基pcb板制造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101076223A (zh) * 2006-09-26 2007-11-21 蔡勇 铝基板磁控溅射金属化电路板及led照明器件
CN101076224A (zh) * 2006-05-16 2007-11-21 南京汉德森科技股份有限公司 铝基印刷电路板及其制作方法
CN101298673A (zh) * 2007-04-30 2008-11-05 汉达精密电子(昆山)有限公司 绝缘导热金属基板的制备方法
CN101661977A (zh) * 2008-08-27 2010-03-03 北京盘天新技术有限公司 一种用于大功率led封装的绝缘金属基板的制备方法
KR100954997B1 (ko) * 2009-05-19 2010-04-27 주식회사 케이디파워 Ｌｅｄ 조명등
CN201888022U (zh) * 2010-11-30 2011-06-29 金壬海 陶瓷粉填充led铝基电路板

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100958024B1 (ko) * 2008-08-05 2010-05-17 삼성엘이디 주식회사 발광 다이오드 패키지 및 그 제조방법
CN101673802B (zh) * 2009-09-27 2011-11-23 上海大学 集成金属基氮化铝薄膜基板与热管的大功率led模块及其制备方法
CN101887942A (zh) * 2010-06-07 2010-11-17 江苏鑫钻新材料科技有限公司 一种安装led的金属基板及其制造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101076224A (zh) * 2006-05-16 2007-11-21 南京汉德森科技股份有限公司 铝基印刷电路板及其制作方法
CN101076223A (zh) * 2006-09-26 2007-11-21 蔡勇 铝基板磁控溅射金属化电路板及led照明器件
CN101298673A (zh) * 2007-04-30 2008-11-05 汉达精密电子(昆山)有限公司 绝缘导热金属基板的制备方法
CN101661977A (zh) * 2008-08-27 2010-03-03 北京盘天新技术有限公司 一种用于大功率led封装的绝缘金属基板的制备方法
KR100954997B1 (ko) * 2009-05-19 2010-04-27 주식회사 케이디파워 Ｌｅｄ 조명등
CN201888022U (zh) * 2010-11-30 2011-06-29 金壬海 陶瓷粉填充led铝基电路板

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104812166A (zh) * 2015-05-15 2015-07-29 何忠亮 一种反光导热金属基pcb板制造方法
CN104812166B (zh) * 2015-05-15 2017-12-22 深圳市环基实业有限公司 一种反光导热金属基pcb板制造方法

Also Published As

Publication number Publication date
TW201344707A (zh) 2013-11-01
WO2013053277A1 (zh) 2013-04-18

Similar Documents

Publication Publication Date Title
US11107744B2 (en) Insulated gate bipolar transistor module and manufacturing method thereof
CN105706231A (zh) 热管理电路材料、其制造方法以及由其形成的制品
US9865530B2 (en) Assembly comprising an element that is capable of transmitting heat, a film of a polymer that is a good thermal conductor and electrical insulator, a sintered joint and a radiator and manufacturing method
CN107172808A (zh) 双面直接镀铜陶瓷电路板及其制造方法
TW201017921A (en) Compound semiconductor device package module structure and fabricating method thereof
WO2014204828A2 (en) Thermal interface nanocomposite
CN202308039U (zh) 一种新型铝基板
JP6125528B2 (ja) 発光ダイオード用基板および発光ダイオード用基板の製造方法
CN107708296A (zh) 一种高导热的金属基电路板及其制作方法
CN102355796A (zh) 一种新型铝基板的制造方法
KR101075147B1 (ko) 금속 인쇄회로기판의 원판 및 그 제조방법
CN204131823U (zh) 新型高导热电路板
TW201318235A (zh) 加強散熱的光學元件封裝
CN103107275B (zh) 一种led兼顾导热散热和绝缘耐压的装置
CN102811554A (zh) 大功率电子器件模组用基板及其制备方法
CN109348616A (zh) 一种具有热传导结构的线路板及其制作方法
CN102983123A (zh) 一种具有上下电极led芯片陶瓷基板的led集成模块及其集成封装工艺
CN209659706U (zh) 一种具有热传导结构的线路板
TW201306681A (zh) 陶瓷電路板及其製造方法
CN105914283A (zh) 散热基板、功率模块及制备散热基板的方法
WO2019088637A1 (ko) 양면 세라믹 기판 제조방법, 그 제조방법에 의해 제조되는 양면 세라믹 기판 및 이를 포함하는 반도체 패키지
CN202178296U (zh) 复合散热板结构
WO2013141322A1 (ja) 発光素子用基板の製造方法、発光素子用基板、および発光装置
US10060036B2 (en) Plated-layer structure for improving interface stress between aluminium nitride substrate and copper-plated layer
JP2015225963A (ja) 配線基板、電子装置および電子モジュール

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
ASS Succession or assignment of patent right

Owner name: GERUI ELECTRONIC XIAMEN CO., LTD.

Effective date: 20121025

Owner name: RIYUE ILLUMINATION APPLIANCES CO., LTD., JIANGSE

Free format text: FORMER OWNER: GERUI ELECTRONIC XIAMEN CO., LTD.

Effective date: 20121025

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: 361009 XIAMEN, FUJIAN PROVINCE TO: 224700 YANCHENG, JIANGSU PROVINCE

TA01 Transfer of patent application right

Effective date of registration: 20121025

Address after: Guangming Road 224700 Yancheng City Jianhu County, Jiangsu Province Economic Development Zone No. 999

Applicant after: Riyue Illumination Appliances Co., Ltd., Jiangse

Applicant after: Great Electronics (Xiamen) Co., Ltd.

Address before: 361009. 9 floor, No. 33 Changhong Road, Huli District, Fujian, Xiamen

Applicant before: Great Electronics (Xiamen) Co., Ltd.

C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20120215