CN102354723B - 一种倒装半导体发光器件及其制造方法 - Google Patents
一种倒装半导体发光器件及其制造方法 Download PDFInfo
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Cited By (1)
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CN107342281A (zh) * | 2017-06-29 | 2017-11-10 | 厦门市三安集成电路有限公司 | 一种化合物半导体mim电容结构的制作方法 |
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KR101493321B1 (ko) * | 2012-11-23 | 2015-02-13 | 일진엘이디(주) | 전류 분산 효과가 우수한 발광소자 및 그 제조 방법 |
CN103887218B (zh) * | 2012-12-21 | 2018-03-09 | 晶能光电(常州)有限公司 | 一种GaN基白光倒装芯片的制备方法 |
CN103904182A (zh) * | 2012-12-28 | 2014-07-02 | 晶能光电(常州)有限公司 | 一种衬底图形化的倒装led芯片及其制备方法 |
CN103337578A (zh) * | 2013-05-24 | 2013-10-02 | 袁灵 | 正装双电极芯片反贴应用的方法及结构 |
TWI616004B (zh) * | 2013-11-27 | 2018-02-21 | 晶元光電股份有限公司 | 半導體發光元件 |
CN104733600B (zh) * | 2013-12-20 | 2018-04-17 | 晶能光电(江西)有限公司 | 一种倒装led芯片及其制备方法 |
KR102019914B1 (ko) | 2014-06-11 | 2019-11-04 | 엘지이노텍 주식회사 | 발광 소자 |
CN111446340B (zh) * | 2018-05-04 | 2022-08-02 | 天津三安光电有限公司 | 一种微型发光元件及其制作方法 |
CN109841710B (zh) * | 2019-04-12 | 2020-05-15 | 南京大学 | 用于透明显示的GaN Micro-LED阵列器件及其制备方法 |
CN110544739A (zh) * | 2019-09-02 | 2019-12-06 | 闽南师范大学 | 一种倒装红光芯片及其制作方法 |
CN113497164B (zh) * | 2020-03-20 | 2023-01-24 | 山东浪潮华光光电子股份有限公司 | 一种反极性GaAs基AlGaInP红光LED芯片管芯结构及其制作方法 |
Citations (4)
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CN1564333A (zh) * | 2004-04-01 | 2005-01-12 | 光磊科技股份有限公司 | 一种发光二极管 |
JP2005116794A (ja) * | 2003-10-08 | 2005-04-28 | Mitsubishi Cable Ind Ltd | 窒化物半導体発光素子 |
CN101859861A (zh) * | 2010-05-13 | 2010-10-13 | 厦门市三安光电科技有限公司 | 具有双反射层的氮化镓基倒装发光二极管及其制备方法 |
CN102067336A (zh) * | 2008-08-19 | 2011-05-18 | 晶能光电(江西)有限公司 | 基于应力可调InGaAlN薄膜的发光器件 |
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Patent Citations (4)
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JP2005116794A (ja) * | 2003-10-08 | 2005-04-28 | Mitsubishi Cable Ind Ltd | 窒化物半導体発光素子 |
CN1564333A (zh) * | 2004-04-01 | 2005-01-12 | 光磊科技股份有限公司 | 一种发光二极管 |
CN102067336A (zh) * | 2008-08-19 | 2011-05-18 | 晶能光电(江西)有限公司 | 基于应力可调InGaAlN薄膜的发光器件 |
CN101859861A (zh) * | 2010-05-13 | 2010-10-13 | 厦门市三安光电科技有限公司 | 具有双反射层的氮化镓基倒装发光二极管及其制备方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107342281A (zh) * | 2017-06-29 | 2017-11-10 | 厦门市三安集成电路有限公司 | 一种化合物半导体mim电容结构的制作方法 |
CN107342281B (zh) * | 2017-06-29 | 2019-05-21 | 厦门市三安集成电路有限公司 | 一种化合物半导体mim电容结构的制作方法 |
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Address after: Annex building 2, engineering technology research center, No. 679, aixihu North Road, Nanchang high tech Industrial Development Zone, Nanchang City, Jiangxi Province Co-patentee after: Nanchang University Patentee after: NANCHANG GUIJI SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 330047 No. seven, No. 192, hi tech Zone, Nanchang hi tech Zone, Jiangxi Co-patentee before: Nanchang University Patentee before: NANCHANG HUANGLYU LIGHTING Co.,Ltd. |
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