CN102354722B - Lighting device with high power - Google Patents

Lighting device with high power Download PDF

Info

Publication number
CN102354722B
CN102354722B CN201110347878.9A CN201110347878A CN102354722B CN 102354722 B CN102354722 B CN 102354722B CN 201110347878 A CN201110347878 A CN 201110347878A CN 102354722 B CN102354722 B CN 102354722B
Authority
CN
China
Prior art keywords
semiconductor layer
doped semiconductor
light
support substrate
luminous lamination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201110347878.9A
Other languages
Chinese (zh)
Other versions
CN102354722A (en
Inventor
林锦源
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Epistar Corp
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Publication of CN102354722A publication Critical patent/CN102354722A/en
Application granted granted Critical
Publication of CN102354722B publication Critical patent/CN102354722B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Abstract

The invention discloses a kind of light-emitting device, comprise support substrate; The luminous lamination with luminescent layer is positioned on support substrate, and there is the non-Doped Semiconductor layer of the alloy that artificially do not adulterate, be positioned on luminous lamination, and the upper surface of non-Doped Semiconductor layer has periodic structure, wherein the material of non-Doped Semiconductor layer comprises Al xga yin 1-x-yn, 0≤x≤1,0≤y≤1,0≤x+y≤1, or Al aga bin 1-a-bp, 0≤a≤1,0≤b≤1,0≤a+b≤1.

Description

Lighting device with high power
To be the applying date be on May 26th, 2008 to the application and denomination of invention is the divisional application of the Chinese patent application 200810108805.2 of " lighting device with high power ".
Technical field
The present invention relates to a kind of lighting device with high power, particularly relate to a kind of lighting device with high power with periodic structure.
Background technology
Light-emitting diode (Light Emitting Diode; LED) be a kind of solid-state physics semiconductor element, it at least comprises p-n junction (p-n junction), and this p-n junction is formed between p-type and n-type semiconductor layer.When applying bias voltage to a certain degree on p-n junction, the hole in p-type semiconductor layer and the electronics in n-type semiconductor layer will in conjunction with and discharge bright dipping.The region that this light produces generally is also called luminous zone (activeregion).
LED in order to specific object can conversion baseplate, such as use the good copper base of heat radiation maybe can increase the transparency carrier of light extraction efficiency, as sapphire substrate, and at the pattern of the upper surface formation rule of LED to carry highlight extraction efficiency.Generally speaking, after conversion baseplate, originally the growth substrate in epitaxial growth technology and unadulterated resilient coating can be removed and expose the epitaxial loayer of doping, such as p-type semiconductor or n shape semiconductor, then on exposed epitaxial loayer, window layers or dielectric layer is formed, such as ITO, then formation rule pattern is in window layers or dielectric layer, technique is comparatively complicated.
Summary of the invention
Lighting device with high power comprises support substrate; Knitting layer, is positioned on support substrate; Reflector, is positioned on knitting layer; Conductive contact layer, is positioned on reflector; Luminous lamination, is positioned on conductive contact layer; And non-doping semiconductor layer, be positioned on luminous lamination.Luminous lamination comprises the first Doped Semiconductor layer, is positioned on conductive contact layer; Luminescent layer, is positioned on the first Doped Semiconductor layer; Second Doped Semiconductor layer, between luminescent layer and non-doping semiconductor layer.Non-Doped Semiconductor layer has opening with exposed part second Doped Semiconductor layer.Among opening, form the first electrode, and contact with the second Doped Semiconductor layer; Second electrode, is positioned under support substrate.
Lighting device with high power comprises support substrate; Knitting layer, is positioned on support substrate; Reflector, is positioned on knitting layer; Conductive contact layer, is positioned on reflector; Luminous lamination, is positioned on conductive contact layer; And non-doping semiconductor layer, be positioned on luminous lamination.Luminous lamination comprises the first Doped Semiconductor layer, is positioned on conductive contact layer; Luminescent layer, is positioned on the first Doped Semiconductor layer; Second Doped Semiconductor layer, between luminescent layer and non-doping semiconductor layer.Non-Doped Semiconductor layer has opening with exposed part second Doped Semiconductor layer.Among opening, form the first electrode, and contact with the second Doped Semiconductor layer; Second electrode, is positioned at the part that conductive contact layer is exposed.
Accompanying drawing explanation
Fig. 1 to Fig. 5 is the manufacturing process profile of display according to the lighting device with high power of one embodiment of the invention.
Fig. 6 is the profile of display according to the lighting device with high power of another embodiment of the present invention.
Fig. 7 is schematic diagram, shows the schematic diagram of the light-source generation device utilizing the light-emitting component of the embodiment of the present invention to form.
Fig. 8 is schematic diagram, shows the schematic diagram of the backlight module utilizing the light-emitting component of the embodiment of the present invention to form.
Description of reference numerals
1 light-emitting device 10,2 lighting device with high power
100 growth substrate 101,201 support substrates
110,210 non-Doped Semiconductor layer 112,212 periodic structures
The luminous lamination of 114,214 opening 120,220
122,222 second Doped Semiconductor layer 124,224 luminescent layers
126,226 first Doped Semiconductor layer 130 conductive contact layers
140 reflector 150 knitting layers
160,260 first electrodes 170,270 second electrodes
3 light-source generation device 31 light sources
32 power system 33 control elements
4 backlight module 41 optical elements
Embodiment
As shown in Figure 1, light-emitting device 1 comprises growth substrate 100; Non-Doped Semiconductor layer 110, is positioned on growth substrate 100; Luminous lamination 120, is positioned on non-Doped Semiconductor layer 110; Conductive contact layer 130, is positioned on luminous lamination 120; And reflector 140, be positioned on conductive contact layer 130.Luminous lamination 120 comprises the second Doped Semiconductor layer 122, is positioned on non-Doped Semiconductor layer 110; Luminescent layer 124, is positioned on the second Doped Semiconductor layer 122; First Doped Semiconductor layer 126, between luminescent layer 124 and conductive contact layer 130.Non-Doped Semiconductor layer 110 can be resilient coating, or comprises resilient coating, in order to reduce the lattice defect that subsequent epitaxial technique is formed.Non-its material of Doped Semiconductor layer 110 is including but not limited to Al xga yin 1-x-yn, 0≤x≤1,0≤y≤1,0≤x+y≤1, or Al aga bin 1-a-bp, 0≤a≤1,0≤b≤1,0≤a+b≤1, and not by any alloy that adulterates artificially or deliberately.
The material of the second Doped Semiconductor layer 122 is including but not limited to Al xga yin 1-x-yn, 0≤x≤1,0≤y≤1,0≤x+y≤1, or Al aga bin 1-a-bp, 0≤a≤1,0≤b≤1,0≤a+b≤1 can be N-shaped or p-type semiconductor.The material of the first Doped Semiconductor layer 126 is including but not limited to Al xga yin 1-x-yn, 0≤x≤1,0≤y≤1,0≤x+y≤1, or Al aga bin 1-a-bp, 0≤a≤1,0≤b≤1,0≤a+b≤1, but electrically different with the second Doped Semiconductor layer 122.The material of luminescent layer 124 is including but not limited to II-VI group semiconductor, Group III-V semiconductor, AlGaInP, AlN, GaN, AlGaN, InGaN, AlInGaN or CdZnSe.
Conductive contact layer 130 and the first Doped Semiconductor layer 126 form ohmic contact, its material is including but not limited to gallium phosphide (GaP), GaAs (GaAs), gallium arsenide phosphide (GaAsP), arsenic gallium aluminium (AlGaAs), gallium nitride (GaN), indium (In), tin (Sn), aluminium (Al), gold (Au), platinum (Pt), zinc (Zn), silver (Ag), titanium (Ti), tin (Pb), germanium (Ge), copper (Cu), nickel (Ni), beryllium gold (AuBe), germanium gold (AuGe), zinc impregnation gold (AuZn), tin lead (PbSn), tin indium oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin (CTO), antimony tin (ATO), the group that the combination of the metal oxides such as zinc oxide (ZnO) or above-mentioned material is formed.Reflector 140 is in order to reflection ray, and its material is including but not limited to indium (In), tin (Sn), aluminium (Al), gold (Au), platinum (Pt), zinc (Zn), silver (Ag), titanium (Ti), tin (Pb), germanium (Ge), copper (Cu), nickel (Ni), beryllium gold (AuBe), germanium gold (AuGe), zinc impregnation gold (AuZn), tin lead (PbSn), the combination of above-mentioned material or Bragg reflecting layer.
Knitting layer 150 is optionally formed on reflector 140 or support substrate 101, also or on both all forms knitting layer 150.Cohere light-emitting device 1 and support substrate 101 by knitting layer 150, then the step through overturning forms light-emitting device 1 as shown in Figure 2.The material of knitting layer 150 is including but not limited to polyimides (PI), benzocyclobutene (BCB), cross fluorine cyclobutane (PFCB), epoxy resin (Epoxy), other organic binding materials, indium (In), tin (Sn), aluminium (Al), gold (Au), platinum (Pt), zinc (Zn), silver (Ag), titanium (Ti), plumbous (Pb), palladium (Pd), germanium (Ge), copper (Cu), nickel (Ni), tin gold (AuSn), patina indium (InAg), aurification indium (InAu), beryllium gold (AuBe), germanium gold (AuGe), zinc impregnation gold (AuZn), tin lead (PbSn), the combination of indium palladium (PdIn) or above-mentioned material.The material of support substrate 101 is including but not limited to semiconductor, metal, silicon (Si), Echothiopate Iodide (IP), zinc selenide (ZnSe), aluminium nitride (AlN), GaAs (GaAs), Aluminum gallium arsenide (AlGaAs), gallium nitride (GaN), lithia aluminium (LiAlO 2), carborundum (SiC), zinc oxide (ZnO), metal-base composites (Metal Matrix Composite; MMC), the combination of gallium phosphide (GaP), germanium (Ge), indium phosphide (InP), aluminium nitride (AlN), manganese oxide (MnO), magnesium oxide (MgO), calcium oxide (CaO), sapphire (sapphire), diamond (diamond), glass (glass) or above-mentioned material.
Remove growth substrate 100, but retain non-Doped Semiconductor layer 110, form light-emitting device 1 as shown in Figure 3, the method removing growth substrate 100 comprises laser and removes or etch.As shown in Figure 4, utilize the technique such as photoetching or etching, form periodic structure 112 at the upper surface of non-Doped Semiconductor layer 110, comprise multiple recess and protuberance, wherein the height of each protuberance and recess and roomy 100 nanometers that are about are to 3 microns; Periodic structure 112 can be photonic crystal.As shown in Figure 5, the technique such as photoetching or etching is utilized to form opening 114 with exposed part second Doped Semiconductor layer 122 at non-Doped Semiconductor layer 110.Next among opening 114, form the first electrode 160, and contact with the second Doped Semiconductor layer 122, and under support substrate 101, form the second electrode 170.Now, support substrate 101, articulamentum 150 are preferably with reflector 140 material adopting and conduct electricity.Via above-mentioned steps, form lighting device with high power 10.
As shown in Figure 6, lighting device with high power 2 comprises support substrate 201; Knitting layer 250, is positioned on support substrate 201; Reflector 240, is positioned on knitting layer 250; Conductive contact layer 230, is positioned on reflector 240; Luminous lamination 220, is positioned on conductive contact layer 230; And non-Doped Semiconductor layer 210, be positioned on luminous lamination 220.Luminous lamination 220 comprises the first Doped Semiconductor layer 226, is positioned on conductive contact layer 230; Luminescent layer 224, is positioned on the first Doped Semiconductor layer 226; Second Doped Semiconductor layer 222, between luminescent layer 224 and non-Doped Semiconductor layer 210.Utilize the technique such as photoetching or etching, form periodic structure 212 at the upper surface of non-Doped Semiconductor layer 210, comprise multiple recess and protuberance, wherein the height of each protuberance and recess and roomy 100 nanometers that are about are to 3 microns; Periodic structure 212 can be photonic crystal.The technique such as photoetching or etching is utilized to form opening 214 with exposed part second Doped Semiconductor layer 222 at non-Doped Semiconductor layer 210.Remove part non-Doped Semiconductor 210 and luminous lamination 220 with exposed part conductive contact layer 230, the mode removed comprises photoetching or etching.Next among opening 214, form the first electrode 260, and contact with the second Doped Semiconductor layer 222, and on the part that conductive contact layer 230 is exposed, form the second electrode 270; Now, support substrate 201, articulamentum 250 or reflector 240 are preferably and adopt non-conductive material, but are not restricted to this.In addition, also removable portion non-Doped Semiconductor 210, second Doped Semiconductor layer 222 and luminescent layer 224 are with exposed part first Doped Semiconductor layer 226, and form the second electrode 270 on the part that the first Doped Semiconductor 226 is exposed.
Fig. 7 is for showing light-source generation device schematic diagram, and this light-source generation device 3 comprises the lighting device with high power in any embodiment of the present invention.This light-source generation device 3 can be lighting device, such as street lamp, car light or room lighting light source, also can be the back light of backlight module in traffic signal sign or flat-panel screens.This light-source generation device 3 comprise aforementioned lighting device with high power composition light source 31, power system 32 to supply light source 31 1 electric current and control element 33, in order to control power system 32.
Fig. 8 is for showing backlight module generalized section, and this backlight module 4 comprises the light-source generation device 3 in previous embodiment, and optical element 41.The light sent by light-source generation device 3 can be processed by optical element 41, to be applied to flat-panel screens.Only above-described embodiment is only illustrative principle of the present invention and effect thereof, but not for limiting the present invention.Any ripe personage in this skill all when without prejudice to know-why of the present invention and spirit, can modify to above-described embodiment and changes.Therefore the scope of the present invention is listed by claim described later.

Claims (16)

1. a light-emitting device, comprises:
Support substrate;
Luminous lamination, be positioned on this support substrate, wherein this luminous lamination has luminescent layer and the surface relative to this support substrate; And
Non-Doped Semiconductor layer, on this surface being positioned at this luminous lamination,
Wherein this non-Doped Semiconductor layer is not by the alloy that deliberately adulterates, and the upper surface of this non-Doped Semiconductor layer has periodic structure,
Wherein the material of this non-Doped Semiconductor layer comprises Al xg ayIn 1-x-yn, 0≤x≤1,0≤y≤1,0≤x+y≤1, or Al aga bin 1-a-bp, 0≤a≤1,0≤b≤1,0≤a+b≤1.
2. light-emitting device as claimed in claim 1, also comprises:
Opening is with this luminous lamination of exposed part.
3. light-emitting device as claimed in claim 2, also comprises:
First electrode, is positioned on this exposed luminous lamination; And
Second electrode, is positioned under this support substrate.
4. light-emitting device as claimed in claim 1, wherein this luminous lamination comprises:
First Doped Semiconductor layer, between this support substrate and this luminescent layer; And
Second Doped Semiconductor layer, between this non-Doped Semiconductor layer and this luminescent layer.
5. light-emitting device as claimed in claim 4, also comprises:
First electrode, is positioned on this second Doped Semiconductor layer; And
Second electrode, is positioned on this first Doped Semiconductor layer, and is electrically connected with this first Doped Semiconductor layer.
6. light-emitting device as claimed in claim 1, wherein also comprises:
Reflector, between this luminous lamination and this support substrate.
7. light-emitting device as claimed in claim 1, wherein also comprises:
Knitting layer, between this luminous lamination and this support substrate.
8. light-emitting device as claimed in claim 1, wherein this periodic structure is photon crystal structure.
9. a light-emitting device, comprises:
Support substrate;
Luminous lamination, be positioned on this support substrate, wherein this luminous lamination has luminescent layer; And
Non-Doped Semiconductor layer, is positioned on this luminous lamination,
Wherein this non-Doped Semiconductor layer is not by the alloy that deliberately adulterates, and the upper surface of this non-Doped Semiconductor layer has periodic structure,
Wherein this non-Doped Semiconductor layer comprises the lattice defect that resilient coating is formed in order to reduce epitaxy technique.
10. light-emitting device as claimed in claim 9, also comprises:
Opening is with this luminous lamination of exposed part.
11. light-emitting devices as claimed in claim 10, also comprise:
First electrode, is positioned on this exposed luminous lamination; And
Second electrode, is positioned under this support substrate.
12. light-emitting devices as claimed in claim 9, wherein this luminous lamination comprises:
First Doped Semiconductor layer, between this support substrate and this luminescent layer; And
Second Doped Semiconductor layer, between this non-Doped Semiconductor layer and this luminescent layer.
13. light-emitting devices as claimed in claim 12, also comprise:
First electrode, is positioned on this second Doped Semiconductor layer; And
Second electrode, is positioned on this first Doped Semiconductor layer, and is electrically connected with this first Doped Semiconductor layer.
14. light-emitting devices as claimed in claim 9, wherein also comprise:
Reflector, between this luminous lamination and this support substrate.
15. light-emitting devices as claimed in claim 9, wherein also comprise:
Knitting layer, between this luminous lamination and this support substrate.
16. light-emitting devices as claimed in claim 9, wherein this periodic structure is photon crystal structure.
CN201110347878.9A 2008-05-26 2008-05-26 Lighting device with high power Active CN102354722B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2008101088052A CN101593800B (en) 2008-05-26 2008-05-26 Lighting device with high power

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2008101088052A Division CN101593800B (en) 2008-05-26 2008-05-26 Lighting device with high power

Publications (2)

Publication Number Publication Date
CN102354722A CN102354722A (en) 2012-02-15
CN102354722B true CN102354722B (en) 2015-10-14

Family

ID=41408350

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2008101088052A Active CN101593800B (en) 2008-05-26 2008-05-26 Lighting device with high power
CN201110347878.9A Active CN102354722B (en) 2008-05-26 2008-05-26 Lighting device with high power

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN2008101088052A Active CN101593800B (en) 2008-05-26 2008-05-26 Lighting device with high power

Country Status (1)

Country Link
CN (2) CN101593800B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102216738B1 (en) * 2019-04-17 2021-02-18 제엠제코(주) Metal Clip for Semiconductor package

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101071840A (en) * 2006-05-08 2007-11-14 Lg电子株式会社 Light emitting device and method for manufacturing the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101071840A (en) * 2006-05-08 2007-11-14 Lg电子株式会社 Light emitting device and method for manufacturing the same

Also Published As

Publication number Publication date
CN101593800A (en) 2009-12-02
CN101593800B (en) 2012-01-04
CN102354722A (en) 2012-02-15

Similar Documents

Publication Publication Date Title
US8987776B2 (en) Light-emitting device
KR101166922B1 (en) Method of manufacturing light emitting diode
US10147843B2 (en) Semiconductor light emitting device including a window layer and a light-directing structure
US8164084B2 (en) Light-emitting device
KR101150861B1 (en) Light emitting diode having multi-cell structure and its manufacturing method
TWI495141B (en) Method for forming wafer light-emitting construction and light-emitting device
US20040201110A1 (en) Flip-chip light emitting diode with indium-tin-oxide based reflecting contacts
CN101533883B (en) High-efficiency light-emitting device and manufacturing method thereof
CN101656280B (en) Luminous element
US20130334551A1 (en) Light-emitting device and method for manufacturing the same
CN100573937C (en) Light-emitting diode and manufacture method thereof
CN102354722B (en) Lighting device with high power
JP4622426B2 (en) Semiconductor light emitting device
CN107017321B (en) Light emitting element
CN101752466B (en) Light-emitting component
CN102610726B (en) Light-emitting assembly
KR101115533B1 (en) Flip chip Light-emitting device and Method of manufacturing the same
TWI610462B (en) Light-emitting device
TWI491063B (en) High efficiency light-emitting device
KR20180090529A (en) Semiconductor device package
CN101667613B (en) Method for manufacturing high radiating luminous element
KR102162438B1 (en) Light emitting device
KR102404760B1 (en) Light emitting device
TWI423470B (en) A method of manufacturing a high thermal-dissipation light-emitting element
KR20170103164A (en) Semiconductor device and method for manufacturing the same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant