CN101533883B - High-efficiency light-emitting device and manufacturing method thereof - Google Patents
High-efficiency light-emitting device and manufacturing method thereof Download PDFInfo
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- CN101533883B CN101533883B CN 200910118560 CN200910118560A CN101533883B CN 101533883 B CN101533883 B CN 101533883B CN 200910118560 CN200910118560 CN 200910118560 CN 200910118560 A CN200910118560 A CN 200910118560A CN 101533883 B CN101533883 B CN 101533883B
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Abstract
This invention provides a high-efficiency light-emitting device and a manufacturing method thereof. The high-efficiency light-emitting device includes a substrate, a reflective layer, a bonding layer, a first semiconductor layer, an active layer and a second semiconductor layer formed on the active layer. The second semiconductor layer includes a first surface having a first lower region and a first higher region.
Description
Technical field
The present invention relates to a kind of light-emitting device, particularly relate to a kind of high-efficiency light-emitting device.
Background technology
Light-emitting diode (Light-Emitting Diode; LED) application is rather extensive, can be applicable to for example optical display, traffic sign, data memory device, communication device, lighting device and medical treatment device.
In traditional LED, use metal level as electrode usually, for example be titanium/gold or chromium/gold.But metal can absorb light, causes the low luminous efficiency of LED.Therefore, LED comprises the reflector between electrode and luminous lamination, to promote luminous efficiency.Yet, cause above-mentioned structure to have reliability and the problem of peeling off because the metal level of high reflectance and the bonding between the semi-conductive luminous lamination are difficult for.
Summary of the invention
High-efficiency light-emitting device comprises substrate; The reflector is formed on the substrate; Tack coat is formed on the reflector; First semiconductor layer is formed on the tack coat; Active layer is formed on first semiconductor layer; And second semiconductor layer be formed on the active layer.Second semiconductor layer comprises first surface, and first surface has first low area and the first high zone.High-efficiency light-emitting device also comprises conductive structure, and conductive structure comprises first electrode and is formed on first low area, and second electrode is formed under the substrate.
Among another embodiment; High-efficiency light-emitting device also comprises first current barrier layer and is formed on first low area; And first current-diffusion layer be formed on the first surface and first current barrier layer of second semiconductor layer, wherein first current-diffusion layer covers the first high zone.First electrode is positioned on first current-diffusion layer and is positioned at the top of first current barrier layer.
Among the another embodiment, the first high zone also comprises from first surface to more than first the hexagonal hole that extends below, to promote light extraction efficient.
Among another embodiment, high-efficiency light-emitting device comprises substrate; The reflector is formed on the substrate; Tack coat is formed on the reflector; First semiconductor layer is formed on the tack coat; Active layer is formed on first semiconductor layer; And second semiconductor layer be formed on the active layer.Second semiconductor layer comprises first surface, and first surface comprises first low area and the first high zone.First semiconductor layer comprises second surface, and second surface comprises second low area and the second high zone.High-efficiency light-emitting device also comprises conductive structure, and conductive structure comprises first electrode and is formed on first low area and is formed on second low area with second electrode.
Among the another embodiment; High-efficiency light-emitting device also comprises first current barrier layer and is formed at first low area; And first current-diffusion layer be formed on the first surface and first current barrier layer of second semiconductor layer, wherein first current-diffusion layer covers the first high zone.In addition; High-efficiency light-emitting device also comprises second current blocking and is formed on second low area; And second current-diffusion layer be formed on the second surface and second current barrier layer of first semiconductor layer, wherein second current-diffusion layer covers the second high zone.First electrode is positioned on first current-diffusion layer, and is positioned at the top of first current barrier layer.Second electrode is positioned on second current-diffusion layer, and is positioned at the top of second current barrier layer.
Among another embodiment, the first high zone and the second high zone comprise respectively from first surface to more than first the hexagonal hole that extends below with from second surface to more than second the hexagonal hole that extends below, to promote light extraction efficient.
Among another embodiment, the method for making high-efficiency light-emitting device comprises provides substrate; Form the reflector on substrate; Form tack coat on the reflector; Form first semiconductor layer on tack coat; Form active layer on first semiconductor layer; Form second semiconductor layer on active layer; Remove second semiconductor layer, active layer and first semiconductor layer of part second surface with exposed first semiconductor layer; The first surface and the second surface of alligatoring second semiconductor layer; Form first low area on first surface, with second low area on second surface; Form first current barrier layer on first low area, with second current barrier layer on second low area; Form first current-diffusion layer on second semiconductor layer and first current barrier layer, with second current-diffusion layer on first semiconductor layer and second current barrier layer; Form first electrode on first current-diffusion layer; And form second electrode on second current-diffusion layer.
Description of drawings
Figure 1A is the profile according to embodiments of the invention.
Figure 1B is the profile according to another embodiment of the present invention.
Fig. 1 C is the profile according to another embodiment of the present invention.
Fig. 2 A is the profile according to another embodiment of the present invention.
Fig. 2 B is the profile according to another embodiment of the present invention.
Fig. 2 C is the profile according to another embodiment of the present invention.
Fig. 3 is the manufacturing flow chart according to the manufacturing approach of the high efficiency light-emitting element of another embodiment of the present invention.
Description of reference numerals
Substrate: 10,20
Reflector: 11,21
Tack coat: 12,22
First semiconductor layer: 13,23
Active layer: 14,24
Second semiconductor layer: 15,25
First surface: 151,251
First low area: 152,252
The first high zone: 153,253
More than first hexagonal hole: 154
First current barrier layer: 16,26
First current-diffusion layer: 17,27
Second surface: 231
Second low area: 232
The second high zone: 233
More than second hexagonal hole: 234
Second current-diffusion layer: 29
First electrode: A
Second electrode: B
Embodiment
Shown in Figure 1A, high-efficiency light-emitting device 1 comprises substrate 10; Reflector 11 is formed on the substrate 10; Tack coat 12 is formed on the reflector 11; First semiconductor layer 13 is formed on the tack coat 12; Active layer 14 is formed on first semiconductor layer 13; And second semiconductor layer 15 be formed on the active layer 14.Second semiconductor layer 15 has the first surface 151 away from active layer 14, and wherein first surface 151 has first low area 152 and the first high zone 153.Above-mentioned first surface 151 forms than first low area 152 near active layer 14 for removing part second semiconductor layer 15 backs, and than the first high zone 153 away from active layer 14.
The method that forms first low area 152 for example is wet etching, dry ecthing, chemical mechanical polishing method or inductive coupling type plasma etching, and the reflectivity of first low area 152 is at least 70% of general aluminium specular reflectivity.In order to obtain better reflectivity, the surface roughness of first low area 152 is lower than the surface roughness in the first high zone 153, and the best is a flat surface.Because the surface of first low area 152 has less surface roughness, cause reducing between the critical angle of the interface of 152 of first electrode A and first low areas, the light that increases active layer 14 directives first low area 152 is by the probability of total reflection.Can be by the light of first low area, 152 reflections in the layer 11 reflection back directive first high zone 153 that is reflected, the probability of light extraction is higher.In addition, the difference in height of 153 to first low areas 152 is about 100 nanometers～1 micron from the first high zone, is more preferred from 200 nanometers～300 nanometers.The ratio that first low area 152 accounts for first surface 151 surface areas of second semiconductor layer 15 is lower than 30%.
Through the parameter of adjustment with control technology, for example specific gas flow rate, air chamber pressure or temperature etc. can make the first high zone 153 form non-smooth surface in epitaxy technique.Also can remove part second semiconductor layer 15, make that the first high zone 153 forms periodically, pattern type periodically or arbitrarily via modes such as wet etching, dry ecthing or photoetching.Since the non-smooth surface in the first high zone 153, the light extraction efficient thereby the raising of the light in the directive first high zone 153.The first high zone 153 also can be a plurality of protuberances and a plurality of recess.
Shown in Figure 1B; Among another embodiment, conductive structure also comprises the below that first current barrier layer 16 is formed on first low area 152 and is positioned at first electrode A, passes through with block current; Reducing the light that active layer sent is the probability of reflection of first electrode A or absorption; And first current-diffusion layer 17 be formed on second semiconductor layer 15 and first current barrier layer 16, and cover the first high zone, 153, the first electrode A and be positioned on first current-diffusion layer 17.First current barrier layer 16 can be dielectric material, for example Su8, benzocyclobutene (BCB), mistake fluorine cyclobutane (PFCB), epoxy resin (Epoxy), acrylic resin (Acrylic Resin), cyclic olefin polymer (COC), polymethyl methacrylate (PMMA), PET (PET), Merlon (PC), PEI (Polyetherimide), fluorocarbon polymer (Fluorocarbon Polymer), silica gel (Silicone), glass (Glass), aluminium oxide (Al
2O
3), silicon nitride (SiN
x), silica (SiO
2), titanium oxide (TiO
2), the combination of insulating material or above-mentioned material.Because the resistance of first current barrier layer 16 is higher, electric current is by first current-diffusion layer, 17 guiding, the first high zone 153, and the active layer 14 of flowing through then is to produce light.Yet electric current is not positioned at the zone of first current barrier layer, 16 belows through active layer 14, does not produce light so active layer 14 is positioned at the zone of first current barrier layer, 16 belows.Therefore, the light that part produced that is positioned under first current barrier layer 16 of active layer 14 is descended by the probability that first electrode A absorbs.First current-diffusion layer 17 can spread electric current to second semiconductor layer 15 equably; Can be transparent conductive material, for example the combination of tin indium oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin (CTO), antimony tin (ATO), zinc oxide (ZnO), gallium phosphide (GaP) or above-mentioned material.
Shown in Fig. 1 C, the first high zone 153 can be from first surface 151 to more than first the hexagonal hole 154 that extends below, in order to promote light extraction efficient.Difference in height between 153 and first low area 152 of the first high zone is about 100 nanometers～1 micron, is preferably 200 nanometers～300 nanometers.The surface roughness of first low area 152 is more preferred from the surface roughness near smooth surface less than the surface roughness in the first high zone 153.In addition, second semiconductor layer 15 can be nitride-based semiconductor, and substrate 10 can be sapphire substrate.Detailed description can be with reference to patent application " light-emitting device ", case number 11/160,354, and the applying date is 6/21/2005, as the application's list of references.
Shown in Fig. 2 A, among another embodiment, high-efficiency light-emitting device 2 comprises substrate 20; Reflector 21 is formed on the substrate 20; Tack coat 22 is formed on the reflector 21; First semiconductor layer 23 is formed on the tack coat 22; Active layer 24 is formed on first semiconductor layer 23; And second semiconductor layer 25 be formed on the active layer 24.Second semiconductor layer 25 has the first surface 251 away from active layer 24, and wherein first surface 251 has first low area 252 and the first high zone 253.First semiconductor layer 23 has the second surface 231 near active layer 24, and wherein second surface 231 has second low area 232 and the second high zone 233.Above-mentioned first surface 251 forms than first low area 252 near active layer 24 for removing part second semiconductor layer 25 backs, and than the first high zone 253 away from active layer 24.Above-mentioned second surface 231 forms than first low area 232 away from active layer 24 for removing part second semiconductor layer 23 backs, and than the first high zone 233 near active layer 24.
The method that forms first low area 252 and second low area 232 for example is wet etching, dry ecthing, chemical mechanical polishing method or inductive coupling type plasma etching, and the reflectivity of first low area 252 and second low area 232 is at least 70% of general aluminium specular reflectivity.In order to obtain better reflectivity, the surface roughness of first low area 252 and second low area 232 is lower than the surface roughness in the 253 and second high zone 233, the first high zone respectively, and the best is the surface roughness near flat surface.Because the surface of first low area 252 and second low area 232 has less surface roughness; Cause interface between 252 of first electrode A and first low areas; And reduce between the critical angle of the interface of 232 of second electrode B and second low areas, the light that increases active layer 24 directives, first low area 252 and second low area 232 is by the probability of total reflection.Can be by the light of first low area 252 and 232 reflections of second low area in the 253 and second high zone 233, layer 21 reflection back directives, the first high zone that is reflected, the probability of light extraction is higher.In addition, the difference in height of the difference in height of 253 to first low areas 252 and 233 to second low areas 232 from the second high zone is about 100 nanometers～1 micron respectively from the first high zone, is more preferred from 200 nanometers～300 nanometers.The ratio that first low area 252 accounts for first surface 251 surface areas of second semiconductor layer 25 is lower than the ratio that 30%, the second low area 232 accounts for second surface 231 surface areas of first semiconductor layer 23 and is lower than 30%.
Through the parameter of adjustment with control technology, for example specific gas flow rate, air chamber pressure or temperature etc. can make the 253 and second high zone 233, the first high zone form non-smooth surface in epitaxy technique.Also can remove part second semiconductor layer 25 and first semiconductor layer 23, make that 253 and the second high zone 233, the first high zone forms periodically, type periodicity or pattern arbitrarily via modes such as wet etching, dry ecthing or photoetching.Because the non-smooth surface in the 253 and second high zone 233, the first high zone, therefore the light extraction efficient of the light in the 253 and second high zone 233, the directive first high zone improve.253 and the second high zone 233, the first high zone also can be a plurality of protuberances and a plurality of recess.
High-efficiency light-emitting device 2 also comprises conductive structure, and conductive structure comprises first electrode A and second electrode B.Remove part first semiconductor layer 23, active layer 24 and second semiconductor layer 25 with exposed second surface 231; First electrode A and second electrode B lay respectively on first low area 252 and second low area 232, and form ohmic contact with second semiconductor layer 25 and first semiconductor layer 23.But substrate 20, reflector 21 are good with the material of tack coat 22 with electric insulation.First low area 252 and second low area 232 can form figure, for example have circular or other shapes of a plurality of outward extending protuberances.First electrode A on first low area 252 can have identical figure with first low area 252, and second electrode B on second low area 232 can have identical figure with second low area 232.First electrode A forms different patterns with the pattern that second electrode B can define according to first low area 252 and second low area 232 respectively.
Shown in Fig. 2 B; Among another embodiment; Conductive structure also comprises the below that first current barrier layer 26 is formed on first low area 252 and is positioned at first electrode A; Pass through with block current, reducing the light that active layer sent is the probability of reflection of first electrode A or absorption, and first current-diffusion layer 27 is formed on second semiconductor layer 25 and first current barrier layer 26; Wherein first current-diffusion layer, 27 coverings, the first high zone, 253, the first electrode A are positioned on first current-diffusion layer 27.In addition; Conductive structure also comprises the below that second current barrier layer 28 is formed on second low area 232 and is positioned at second electrode B; Pass through with block current, reducing the light that active layer sent is the probability of reflection of second electrode B or absorption, and second current-diffusion layer 29 is formed on first semiconductor layer 23 and second current barrier layer 28; Wherein second current-diffusion layer, 29 coverings, the second high zone, 233, the second electrode B are positioned on second current-diffusion layer 29.First current barrier layer 26 and second current barrier layer 28 can be dielectric material, for example Su8, benzocyclobutene (BCB), mistake fluorine cyclobutane (PFCB), epoxy resin (Epoxy), acrylic resin (Acrylic Resin), cyclic olefin polymer (COC), polymethyl methacrylate (PMMA), PET (PET), Merlon (PC), PEI (Polyetherimide), fluorocarbon polymer (Fluorocarbon Polymer), silica gel (Silicone), glass (Glass), aluminium oxide (Al
2O
3), silicon nitride (SiN
x), silica (SiO
2), titanium oxide (TiO
2), the combination of insulating material or above-mentioned material.Because the resistance of first current barrier layer 26 and second current barrier layer 28 is higher, electric current is by first current-diffusion layer 27 and the 253 and second high zone 233, second current-diffusion layer 29 guiding, the first high zone, and the active layer 24 of flowing through then is to produce light.Yet electric current is not positioned at the zone of first current barrier layer, 26 belows through active layer 24, does not produce light so active layer 24 is positioned at the zone of first current barrier layer, 26 belows.Therefore, the light that part produced that is positioned under first current barrier layer 26 of active layer 24 is descended by the probability that first electrode A absorbs.First current-diffusion layer 27 and second current-diffusion layer 29 can spread electric current to second semiconductor layer 25 and first semiconductor layer 23 equably; Can be transparent conductive material, for example the combination of tin indium oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin (CTO), antimony tin (ATO), zinc oxide (ZnO), gallium phosphide (GaP) or above-mentioned material.
Shown in Fig. 2 C, 253 and the second high zone 233, the first high zone can be respectively from first surface 251 to more than first the hexagonal hole that extends below 254 with from second surface 231 to more than second the hexagonal hole 234 that extends below, extract efficient in order to promote light.Difference in height between 253 and first low area 252 of the first high zone and difference in height between regional 233 and second low area 232 of second height are about 100 nanometers～1 micron, are preferably 200 nanometers～300 nanometers.The surface roughness of first low area 252 and second low area 232 is respectively less than the first high zone, 253 and second high regional 233 the surface roughness, is more preferred from both all near the surface roughness of smooth surface.In addition, second semiconductor layer 25 and first semiconductor layer 23 can be nitride-based semiconductor, and substrate 20 can be sapphire substrate.Detailed description can be with reference to patent application " light-emitting device ", case number 11/160,354, and the applying date is 6/21/2005, as the application's list of references.
As shown in Figure 3, among another embodiment, the method for making high-efficiency light-emitting device 2 comprises provides substrate 20; Form reflector 21 on substrate 20; Form tack coat 22 on reflector 21; Form first semiconductor layer 23 on tack coat 22; Form active layer 24 on first semiconductor layer 23; Form second semiconductor layer 25 on active layer 24, wherein second semiconductor layer 25 has the first surface away from active layer 24; Second semiconductor layer 25, active layer 24 that removes part and first semiconductor layer 23 are to expose the second surface 231 of first semiconductor layer 23; Alligatoring first surface 251 and second surface 231; Form first low area 252 on first surface 251; With second low area 232 on second surface 231; Wherein first surface 251 comprises the first high zone 253 in abutting connection with first low area 252, and second surface 231 comprises the second high zone 233 in abutting connection with second low area 232; Form first current barrier layer 26 on first low area 252, with second current barrier layer 28 on second low area 232; Form first current-diffusion layer 27 on second semiconductor layer 25 and first current barrier layer 26, with second current-diffusion layer 29 on first semiconductor layer 23 and second current barrier layer 28; Form first electrode A on first current-diffusion layer 27, wherein first electrode A is positioned at the top of first low area 252; And form second electrode B on second current-diffusion layer 29, wherein second electrode B is positioned at the top of second low area 232.The surface roughness of first low area 252 is less than the surface roughness in the first high zone 253, and the surface roughness of second low area 232 is less than the surface roughness in the second high zone 233.Difference in height between 253 and first low area 252 of the first high zone and difference in height between regional 233 and second low area 232 of second height are about 100 nanometers～1 micron, are preferably 200 nanometers～300 nanometers.
Alligatoring first surface 251 comprises modes such as wet etching, dry ecthing or photoetching with the mode of second surface 231, makes that 253 and the second high zone 233, the first high zone forms periodically, type periodicity or pattern arbitrarily.In addition; Can be via the parameter of adjustment in epitaxy technique with control technology; For example specific gas flow rate, air chamber pressure or temperature etc.; With alligatoring first surface 251 and second surface 231, comprise form respectively from first surface 251 to more than first the hexagonal hole that extends below 254 with from second surface 231 to more than second the hexagonal hole 234 that extends below.Detailed description can be with reference to patent application " light-emitting device ", case number 11/160,354, and the applying date is 6/21/2005, as the application's list of references.
Coating inductance or light sensation film are exposed to inductance survey or light sensing film under electron beam lithography, laser light diffraction or the ultraviolet radiation etc. on first surface 251 and second surface 231 again, form preset pattern.Form after the predetermined pattern; Form first low area 252 and comprise dry ecthing, wet etching, chemico-mechanical polishing (CMP) or inductive coupling type plasma etching (ICP) in first surface 251 and formation second low area 232 in the method for second surface 231, etching solution comprises but is not limited to phosphoric acid (H
3PO
4) or potassium hydroxide (KOH).Preferred ambient temperature is about 120 ℃ in the technology, etching speed during with stable and control.Difference in height between 253 and first low area 252 of the first high zone and difference in height between regional 233 and second low area 232 of second height are about 100 nanometers～1 micron, are preferably 200 nanometers～300 nanometers.The surface roughness of first low area 252 and second low area 232 is respectively less than the first high zone, 253 and second high regional 233 the surface roughness
The foregoing description is merely illustrative principle of the present invention and effect thereof, but not is used to limit the present invention.Any persons skilled in the art all can be under the situation of know-why of the present invention and spirit, and the foregoing description is made amendment and changed.Therefore rights protection scope of the present invention such as accompanying Claim are listed.
Claims (25)
1. high-efficiency light-emitting device comprises:
Substrate;
First semiconductor layer is formed on this substrate;
Active layer is formed on this first semiconductor layer; And
Second semiconductor layer is formed on this active layer; This second semiconductor layer comprises the first surface of being made up of first low area and the first high zone; Wherein this first surface is away from this active layer; The surface roughness of this first low area is less than the surface roughness in this first high zone, and this first low area is regional near this active layer than this first height.
2. high-efficiency light-emitting device as claimed in claim 1 also comprises first electrode, is positioned on this first low area.
3. high-efficiency light-emitting device as claimed in claim 1 also comprises:
First current barrier layer is formed on this first low area;
First current-diffusion layer is formed on this second semiconductor layer and this first current barrier layer, and wherein this first current-diffusion layer covers at least a portion of this first surface; And
First electrode is formed on this first current-diffusion layer, and is positioned at the top of this first low area.
4. high-efficiency light-emitting device as claimed in claim 1; Wherein this first semiconductor layer comprises the second surface of being made up of second low area and the second high zone; Wherein this second surface is near this active layer, and the surface roughness of this second low area is less than the surface roughness in this second high zone.
5. high-efficiency light-emitting device as claimed in claim 1, wherein the difference in height between this first high zone and this first low area is 100 nanometers～1 micron.
6. high-efficiency light-emitting device as claimed in claim 1, wherein this first high zone comprises non-smooth surface and is selected from by a plurality of hexagonals hole, group that a plurality of protuberance and a plurality of recess constituted.
7. high-efficiency light-emitting device as claimed in claim 1, wherein the surface of this first low area comprises flat surface.
8. high-efficiency light-emitting device as claimed in claim 4 also comprises second electrode, is positioned on this second low area.
9. high-efficiency light-emitting device as claimed in claim 4 also comprises:
Second current barrier layer is formed on this second low area;
Second current-diffusion layer is formed on this first semiconductor layer and this second current barrier layer, and wherein this second current-diffusion layer covers at least a portion of this second surface; And
Second electrode is formed on this second current-diffusion layer, and is positioned at the top of this second low area.
10. high-efficiency light-emitting device as claimed in claim 3, wherein the material of this first current barrier layer is selected the group that combination constituted of free Su8, benzocyclobutene, mistake fluorine cyclobutane, epoxy resin, acrylic resin, cyclic olefin polymer, polymethyl methacrylate, PET, Merlon, PEI, fluorocarbon polymer, silica gel, glass, aluminium oxide, silicon nitride, silica, titanium oxide and above-mentioned material.
11. high-efficiency light-emitting device as claimed in claim 3, wherein the material of this first current barrier layer is selected from dielectric material.
12. high-efficiency light-emitting device as claimed in claim 3, wherein the material of this first current barrier layer is selected from insulating material.
13. high-efficiency light-emitting device as claimed in claim 3, wherein the material of this first current-diffusion layer is selected the group that combination constituted of free oxidation indium tin, indium oxide, tin oxide, cadmium tin, antimony tin, zinc oxide, gallium phosphide and above-mentioned material.
14. high-efficiency light-emitting device as claimed in claim 1, wherein this first low area ratio of accounting for this first surface surface area is lower than 30%.
15. the manufacturing approach of high-efficiency light-emitting device comprises:
Substrate is provided;
Form first semiconductor layer on this substrate;
Form active layer on this first semiconductor layer;
Form second semiconductor layer on this active layer, this second semiconductor layer comprises the first surface away from this active layer; And
Form first low area and the first high zone on this first surface, wherein the surface roughness of this first low area is less than the surface roughness in this first high zone, and this first low area than this first high zone near this active layer.
16. the manufacturing approach of high-efficiency light-emitting device as claimed in claim 15 in that to form this first low area first high regional before on this first surface with this, also comprises this first surface of alligatoring.
17. the manufacturing approach of high-efficiency light-emitting device as claimed in claim 15 after forming this first low area and this first high zone is on this first surface, also comprises formation first electrode on this first low area.
18. the manufacturing approach of high-efficiency light-emitting device as claimed in claim 15, form this first low area with this first high regional on this first surface after, also comprise:
Form first current barrier layer on this first low area;
Form first current-diffusion layer on this second semiconductor layer and this first current barrier layer, wherein this first current-diffusion layer covers at least a portion of this first surface; And
Form first electrode on this first current-diffusion layer, wherein this first electrode is positioned at the top of this first low area.
19. the manufacturing approach of high-efficiency light-emitting device as claimed in claim 15 after this second semiconductor layer of formation is on this active layer, also comprises:
Remove this second semiconductor layer of part, this active layer and this first semiconductor layer second surface with exposed this first semiconductor layer, wherein this second surface is near this active layer; And
Form second low area and the second high zone on this second surface, wherein
The surface roughness of this second low area is less than the surface roughness in this second high zone.
20. the manufacturing approach of high-efficiency light-emitting device as claimed in claim 19 in that to form this second low area second high regional before on this second surface with this, also comprises this second surface of alligatoring.
21. the manufacturing approach of high-efficiency light-emitting device as claimed in claim 19 after forming this second low area and this second high zone is on this second surface, also comprises formation second electrode on this second low area.
22. the manufacturing approach of high-efficiency light-emitting device as claimed in claim 19, form this second low area with this second high regional on this second surface after, also comprise:
Form second current barrier layer on this second low area;
Form second current-diffusion layer on this first semiconductor layer and this second current barrier layer, wherein this second current-diffusion layer covers at least a portion of this second surface; And
Form second electrode on this second current-diffusion layer, wherein this second electrode is positioned at the top of this second low area.
23. the manufacturing approach of high-efficiency light-emitting device as claimed in claim 15 wherein forms this first low area and is selected from the group that is made up of etching, chemical mechanical polishing method and inductive coupling type plasma etching in the method for this first surface.
24. the manufacturing approach of high-efficiency light-emitting device as claimed in claim 23, wherein this etching solution for etching comprises phosphoric acid or potassium hydroxide.
25. the manufacturing approach of high-efficiency light-emitting device as claimed in claim 15, wherein forming the ambient temperature of this first low area on this first surface is 120 ℃.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/073,284 US8097897B2 (en) | 2005-06-21 | 2008-03-04 | High-efficiency light-emitting device and manufacturing method thereof |
| US12/073,284 | 2008-03-04 |
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| CN201210456962.9A Division CN102931304B (en) | 2008-03-04 | 2009-03-04 | High-efficiency light-emitting device and manufacture method thereof |
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| TW201511329A (en) | 2013-09-12 | 2015-03-16 | Lextar Electronics Corp | Light emitting diode structure |
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| EP3865308A1 (en) * | 2020-02-12 | 2021-08-18 | Jesús Francisco Barberan Latorre | Method and machine for producing reliefs, as well as panels containing said reliefs |
| CN111313233B (en) * | 2020-03-04 | 2021-07-27 | 常州纵慧芯光半导体科技有限公司 | Laser device and manufacturing method and application thereof |
| CN116885069B (en) * | 2023-09-05 | 2023-12-19 | 至芯半导体(杭州)有限公司 | Light extraction layer, ultraviolet LED epitaxial structure, and preparation method and application thereof |
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| US6504180B1 (en) * | 1998-07-28 | 2003-01-07 | Imec Vzw And Vrije Universiteit | Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom |
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| US6504180B1 (en) * | 1998-07-28 | 2003-01-07 | Imec Vzw And Vrije Universiteit | Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI389351B (en) | 2013-03-11 |
| TW200939548A (en) | 2009-09-16 |
| CN101533883A (en) | 2009-09-16 |
| CN102931304B (en) | 2016-06-15 |
| CN102931304A (en) | 2013-02-13 |
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