CN102347349A - 半导体结构及其制作方法 - Google Patents
半导体结构及其制作方法 Download PDFInfo
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- CN102347349A CN102347349A CN2010102401094A CN201010240109A CN102347349A CN 102347349 A CN102347349 A CN 102347349A CN 2010102401094 A CN2010102401094 A CN 2010102401094A CN 201010240109 A CN201010240109 A CN 201010240109A CN 102347349 A CN102347349 A CN 102347349A
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- Prior art keywords
- fin
- semiconductor substrate
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- sides
- gate dielectric
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 136
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 94
- 238000000034 method Methods 0.000 claims abstract description 30
- 238000005530 etching Methods 0.000 claims abstract description 25
- 238000002347 injection Methods 0.000 claims description 19
- 239000007924 injection Substances 0.000 claims description 19
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 16
- 150000002500 ions Chemical class 0.000 claims description 12
- 125000001475 halogen functional group Chemical group 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 19
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 15
- -1 fluorine ions Chemical class 0.000 abstract description 2
- 229910052731 fluorine Inorganic materials 0.000 abstract 1
- 239000011737 fluorine Substances 0.000 abstract 1
- 229940090044 injection Drugs 0.000 description 17
- 230000003647 oxidation Effects 0.000 description 17
- 238000007254 oxidation reaction Methods 0.000 description 17
- 238000005516 engineering process Methods 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Landscapes
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (13)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010240109.4A CN102347349B (zh) | 2010-07-28 | 2010-07-28 | 半导体结构及其制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010240109.4A CN102347349B (zh) | 2010-07-28 | 2010-07-28 | 半导体结构及其制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102347349A true CN102347349A (zh) | 2012-02-08 |
CN102347349B CN102347349B (zh) | 2014-07-23 |
Family
ID=45545837
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201010240109.4A Active CN102347349B (zh) | 2010-07-28 | 2010-07-28 | 半导体结构及其制作方法 |
Country Status (1)
Country | Link |
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CN (1) | CN102347349B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015169052A1 (zh) * | 2014-05-04 | 2015-11-12 | 中国科学院微电子研究所 | 一种finfet制造方法 |
CN105826385A (zh) * | 2015-01-27 | 2016-08-03 | 三星电子株式会社 | 制造具有鳍形图案的半导体器件的方法 |
CN106847683A (zh) * | 2015-12-07 | 2017-06-13 | 中芯国际集成电路制造(上海)有限公司 | 提高鳍式场效应管性能的方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030042542A1 (en) * | 1996-04-26 | 2003-03-06 | Shigeto Maegawa | Semiconductor device having a thin film transistor and manufacturing method thereof |
US20050077553A1 (en) * | 2003-10-14 | 2005-04-14 | Kim Sung-Min | Methods of forming multi fin FETs using sacrificial fins and devices so formed |
CN1653608A (zh) * | 2002-06-03 | 2005-08-10 | 国际商业机器公司 | 体半导体的鳍状fet器件及其形成方法 |
CN1741263A (zh) * | 2004-08-27 | 2006-03-01 | 株式会社东芝 | 制造半导体器件的方法以及一种半导体衬底 |
US20060231907A1 (en) * | 2005-04-14 | 2006-10-19 | Samsung Electronics Co., Ltd. | Semiconductor device with FinFET and method of fabricating the same |
US20080048273A1 (en) * | 2006-08-23 | 2008-02-28 | Interuniversitair Microelektronica Centrum (Imec) Vzw | Method for doping a fin-based semiconductor device |
US7485520B2 (en) * | 2007-07-05 | 2009-02-03 | International Business Machines Corporation | Method of manufacturing a body-contacted finfet |
-
2010
- 2010-07-28 CN CN201010240109.4A patent/CN102347349B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030042542A1 (en) * | 1996-04-26 | 2003-03-06 | Shigeto Maegawa | Semiconductor device having a thin film transistor and manufacturing method thereof |
CN1653608A (zh) * | 2002-06-03 | 2005-08-10 | 国际商业机器公司 | 体半导体的鳍状fet器件及其形成方法 |
US20050077553A1 (en) * | 2003-10-14 | 2005-04-14 | Kim Sung-Min | Methods of forming multi fin FETs using sacrificial fins and devices so formed |
CN1741263A (zh) * | 2004-08-27 | 2006-03-01 | 株式会社东芝 | 制造半导体器件的方法以及一种半导体衬底 |
US20060231907A1 (en) * | 2005-04-14 | 2006-10-19 | Samsung Electronics Co., Ltd. | Semiconductor device with FinFET and method of fabricating the same |
US20080048273A1 (en) * | 2006-08-23 | 2008-02-28 | Interuniversitair Microelektronica Centrum (Imec) Vzw | Method for doping a fin-based semiconductor device |
US7485520B2 (en) * | 2007-07-05 | 2009-02-03 | International Business Machines Corporation | Method of manufacturing a body-contacted finfet |
Non-Patent Citations (1)
Title |
---|
CASEY EBEN SMITH: "ADVANCED TECHNOLOGY FOR SOURCE DRAIN RESISTANCE REDUCTION IN NANOSCALE FINFETS", 《DISSERTATION PREPARED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY》 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015169052A1 (zh) * | 2014-05-04 | 2015-11-12 | 中国科学院微电子研究所 | 一种finfet制造方法 |
CN105097528A (zh) * | 2014-05-04 | 2015-11-25 | 中国科学院微电子研究所 | 一种finfet制造方法 |
CN105826385A (zh) * | 2015-01-27 | 2016-08-03 | 三星电子株式会社 | 制造具有鳍形图案的半导体器件的方法 |
CN105826385B (zh) * | 2015-01-27 | 2021-01-05 | 三星电子株式会社 | 制造具有鳍形图案的半导体器件的方法 |
CN106847683A (zh) * | 2015-12-07 | 2017-06-13 | 中芯国际集成电路制造(上海)有限公司 | 提高鳍式场效应管性能的方法 |
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Publication number | Publication date |
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CN102347349B (zh) | 2014-07-23 |
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Effective date of registration: 20201218 Address after: 510000 601, building a, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Patentee after: AoXin integrated circuit technology (Guangdong) Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |
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Effective date of registration: 20220425 Address after: 510000 room 710, Jianshe building, No. 348, Kaifa Avenue, Huangpu District, Guangzhou, Guangdong Patentee after: Ruili flat core Microelectronics (Guangzhou) Co.,Ltd. Address before: 510000 601, building a, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Patentee before: AoXin integrated circuit technology (Guangdong) Co.,Ltd. |