CN102332522A - 发光二极管封装结构及封装方法 - Google Patents
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Abstract
一种发光二极管封装结构,其包括一金属薄膜,所述金属薄膜具有第一表面以及与第一表面相对的第二表面。该金属薄膜包括相互绝缘的第一金属层和第二金属层。一发光二极管晶粒设置在金属薄膜的第一表面上,该发光二极管晶粒具有第一电极和第二电极,第一电极与第一金属层电性连接,第二电极与第二金属层电性连接。所述发光二极管封装结构进一步包括一玻璃封装体,用于密封设置在金属薄膜上的发光二极管晶粒。所述金属薄膜的第二表面显露于玻璃封装体的外部。本发明采用金属薄膜作为发光二极管晶粒对外连接的电极,同时采用玻璃材料封装,使该发光二极管封装结构可有效薄型化,且其耐高温特性较好。本发明还提供了一种发光二极管的封装方法。
Description
技术领域
本发明涉及一种发光二极管的封装结构及该发光二极管的封装方法。
背景技术
发光二极管(Light Emitting Diode,LED)是一种可将电流转换成特定波长范围的光的半导体元件。发光二极管以其亮度高、工作电压低、功耗小、易与集成电路匹配、驱动简单、寿命长等优点,从而可作为光源而广泛应用于照明领域。
随着科技的发展,发光二极管封装体的尺寸也逐渐朝着小型化及薄片化发展。发光二极管的封装结构一般包括设置有电极图案的基板,设置在基板上的发光二极管晶粒以及用于将发光二极管晶粒封装于基板上的封装材料层。由于基板的厚度较大,这种发光二极管封装结构无法有效地薄片化。另外,一般的发光二极管封装结构都采用树脂作为密封材料,由于树脂材料容易在高温下产生黄化,从而影响该发光二极管的出光效率和使用寿命。
发明内容
有鉴于此,有必要提供一种薄型的发光二极管封装结构及该发光二极管的封装方法。
一种发光二极管封装结构,其包括一金属薄膜,所述金属薄膜具有第一表面以及与第一表面相对的第二表面。该金属薄膜包括相互绝缘的第一金属层和第二金属层。一发光二极管晶粒设置在金属薄膜的第一表面。该发光二极管晶粒具有第一电极和第二电极,第一电极与第一金属层电性连接,第二电极与第二金属层电性连接。所述发光二极管封装结构进一步包括一玻璃封装体,用于密封设置在金属薄膜上的发光二极管晶粒。所述金属薄膜的第二表面显露于玻璃封装体的外部。
一种发光二极管的封装方法,其包括以下步骤:
在基体上形成一层金属薄膜,所述金属薄膜包括第一表面以及与第一表面相对的第二表面;
将金属薄膜图案化而形成相互绝缘的第一金属层和第二金属层;
在金属薄膜的第一表面设置发光二极管晶粒,所述发光二极管晶粒具有第一电极和第二电极,第一电极与第一金属层电性连接,第二电极与第二金属层电性连接;
采用玻璃材料密封设置在金属薄膜上的发光二极管晶粒以形成一玻璃封装体;
移除基体而显露出金属薄膜的第二表面。
与现有技术相比,本发明通过移除基体而显露出金属薄膜的表面,并且采用金属薄膜作为发光二极管晶粒的电极,从而有效地使发光二极管封装结构薄型化。同时,在基体被移除之后,由于该金属薄膜的第一金属层和第二金属层设置在封装体的底部,该发光二极管封装结构可有效地进行表面贴装的过程。另外,本发明采用玻璃材料来封装发光二极管晶粒,由于玻璃材料具有耐高温特性好且不易黄化的优点,使到玻璃封装层能够在更高的温度下正常工作。
附图说明
图1-图5是本发明第一实施例的发光二极管封装结构的制作过程示意图。
图6是在图5的发光二极管封装结构中增加抗反射膜的结构示意图。
图7是本发明第二实施例的发光二极管封装结构示意图。
图8是本发明第三实施例的发光二极管封装结构示意图。
图9是本发明第四实施例的发光二极管封装结构示意图。
图10是图9中的发光二极管封装结构的一种变化实施方式。
图11是本发明第五实施例的发光二极管封装结构示意图。
图12是本发明第六实施例的发光二极管封装结构示意图。
主要元件符号说明
发光二极管封装结构 100、200、300、400、500、600
金属薄膜 110、210、310、410、510、610
第一表面 111
第二表面 112
第一金属层 113、513、613
第二金属层 114、514、614
发光二极管晶粒 120、220、320、420、520、620
第一电极 121、521、621
第二电极 122、522、622
玻璃封装体 130、230、330、430、530、630
容置空间 431
气体隔离层 432
基体 140
抗反射膜 150
荧光转换层 250、450
荧光粉颗粒 350
固晶胶 560、660
具体实施方式
下面以具体的实施例对本发明作进一步地说明。
请参见图5,本发明第一实施例提供的发光二极管封装结构100包括金属薄膜110、设置在金属薄膜110上的发光二极管晶粒120及玻璃封装体130。
所述金属薄膜110包括具有第一表面111以及与第一表面111相对的第二表面112。并且该金属薄膜110包括相互绝缘的第一金属层113和第二金属层114,所述第一金属层113和第二金属层114可作为该发光二极管封装结构100在表面贴装时进行对外连接的两个电极。该金属薄膜110的制作材料选自金(Au)、银(Ag)、铜(Cu)、铝(Al)、锡(Sn)、镍(Ni)、钴(Co)其中之一或其合金。
发光二极管晶粒120设置在金属薄膜110的第一表面111。在本实施例中,该发光二极管晶粒120设置在第一金属层113的表面。所述发光二极管晶粒120具有设置在其两端的第一电极121和第二电极122。第一电极121与第一金属层113相接触且与第一金属层113电性连接,第二电极122通过导线(图未标示)与第二金属层114电性连接。在工作时,在第一电极121和第二电极122之间施加一定的驱动电压,即可使发光二极管晶粒120发光。根据需要,发光二极管晶粒的设置方式并不限于本实施例,如可以采用覆晶(flipchip)或共晶(eutectic)结构的发光二极管晶粒,使发光二极管晶粒直接设置在金属薄膜上。
玻璃封装体130用于封装设置在金属薄膜110上的发光二极管晶粒120。所述金属薄膜110的第二表面112显露于玻璃封装体130的外部,从而使第一金属层113和第二金属层114可有效地对外进行电学连接,为发光二极管晶粒正常工作提供相应的驱动电流或者电压。所述玻璃封装体的材料可为SiO2或者NaO.nSiO2(n>0)。优选地,在玻璃封装体130上可镀上一层抗反射膜150,如图6所示。该抗反射膜150可降低光线在玻璃封装体130与外界空气的界面上的反射率,从而提高出光效率。在本发明的一实施例中,该抗反射膜150为光学镀膜,所述光学镀膜为无机金属氧化物,如氧化钛、氧化硅或氧化铝。
图1-图5为本实施例的发光二极管封装结构100的制作过程。
请参见图1,首先提供一个基体140,该基体140可以是硅基板、碳化硅基板、蓝宝石基板、氧化锌基板、金属基板或者是玻璃基板。然后在基体140表面通过真空蒸镀或者溅镀的方法形成一层金属薄膜110,该金属薄膜110具有第一表面111以及与第一表面111相对的第二表面112,所述第二表面112与基体140相接触。另外,该金属薄膜110也可以通过丝网印刷、电镀等方法形成于基体140的表面。
请参见图2,将金属薄膜110图案化而形成相互绝缘的第一金属层113和第二金属层114。具体地,在金属薄膜110表面涂覆感光层,然后通过曝光显影的方法使感光层形成所需的图案,然后经过蚀刻使金属薄膜110形成相应的图案。另外,也可以在真空蒸镀或者溅镀之前在基体140的表面形成一层SiO2阻挡层,在真空蒸镀或者溅镀的过程中,金属薄膜110将会沉积在基体140的未被SiO2阻挡层覆盖的区域,从而形成相应的图案。然后再去除SiO2阻挡层。
请参见图3,在金属薄膜110的第一表面111设置发光二极管晶粒120。该发光二极管晶粒120具有第一电极121和第二电极122,第一电极121通过焊接或采用共晶结合的方法设置在第一金属层113上并与第一金属层113电连接,第二电极122通过打线的方式与第二金属层114形成电连接。
请参见图4,采用玻璃材料密封设置在金属薄膜110上的发光二极管晶粒120以形成一玻璃封装体130。在本发明的实施例中,玻璃封装体130具有凸状或子弹状的结构。
请参见图5,移除基体140而显露出金属薄膜110的第二表面112。具体地,采用激光切割、研磨或蚀刻等方法去除基体140,使得金属薄膜110的第二表面112显露于玻璃封装体130的外部。此时,金属薄膜110位于玻璃封装体130的底部,其从由基体140承载转移到由玻璃封装体130承载。
在本实施例中,采用玻璃封装体130作为发光二极管晶粒120的支撑结构,同时以位于玻璃封装体130底部的金属薄膜110作为发光二极管晶粒120对外连接的电极。与常规的发光二极管封装结构相比,本实施例的发光二极管封装结构100去除了基板,使到该结构可以有效地薄型化。具体地,本发明发光二极管封装结构的厚度可达到100微米(μm)至150微米(μm)之间。另外,采用玻璃作为发光二极管晶粒120的封装材料,由于玻璃的耐高温特性较好,其可以避免常规的树脂封装材料在高温下黄化而造成的出光效率降低及寿命下降的问题。
本发明的发光二极管封装结构并不限于上述实施方式,图7为本发明第二实施例的发光二极管封装结构200,其包括金属薄膜210,设置在金属薄膜210表面的发光二极管晶粒220及用于封装发光二极管晶粒220的玻璃封装体230。与第一实施例不同的是,该发光二极管封装结构200进一步包括一荧光转换层250,所述荧光转换层250可以通过涂覆或粘贴的方法设置在玻璃封装体230的表面。所述荧光转换层250的制作材料选自石榴石(YAG)结构的荧光粉材料,氮化物系荧光粉材料,磷化物,硫化物或硅酸盐化合物等。该荧光转换层250可将发光二极管晶粒220所发出的第一波长范围内的光线转换为第二波长范围内的光线,其中第一波长的数值不同于第二波长的数值。例如将发蓝光的发光二极管晶粒220与将蓝光转换为黄光的荧光转换层250相组合而使整个发光二极管封装结构200发出白光或多波长的混光。优选地,所述荧光转换层250还可以进一步包括环氧树脂(epoxy)、硅树脂(silicone)或者其他封装材料。
另外,荧光转换层的设置位置也不限于第二实施例所描述的方式。
如图8所示,本发明第三实施例的发光二极管封装结构300包括金属薄膜310,设置在金属薄膜310表面的发光二极管晶粒320及用于封装发光二极管晶粒320的玻璃封装体330。与第二实施例不同的是,玻璃封装体330的内部设置有荧光粉颗粒350。该荧光粉颗粒350可在玻璃封装体330的形成过程中添加进玻璃材料中,当玻璃材料固化时,所述荧光粉颗粒350即可固定于玻璃封装体330的内部。本实施例中,将荧光粉颗粒350设置在玻璃封装体330的内部,其不容易受到外界环境的影响,使得该发光二极管封装结构300具有较好的稳定性。
如图9所示,本发明第四实施例的发光二极管封装结构400包括金属薄膜410,设置在金属薄膜410表面的发光二极管晶粒420及用于封装发光二极管晶粒420的玻璃封装体430。与第一实施例不同的是,所述玻璃封装体430的内部具有一容置空间431,发光二极管晶粒420设置在该容置空间431内部。在本实施例中,玻璃封装体430并不直接与发光二极管晶粒420相接触,因此发光二极管晶粒420及其引线结构不容易受到封装过程中的温度所影响而导致性能下降。在实际操作过程中,可在封装的过程中通入保护性气体如氮气或惰性气体,该保护性气体可在发光二极管晶粒420与玻璃封装体430之间形成一层气体隔离层432,使玻璃封装体430与发光二极管晶粒420之间不直接接触。另外,保护性气体亦可以避免水气进入容置空间431中,造成发光二极管晶粒420寿命降低或遭受破坏。根据需要,该容置空间431的内壁还可以设置一荧光转换层450,同样,该荧光转换层450不容易受到外界环境的影响而使其性能劣化。
另外,在本实施例中,荧光转换层450并不限于设置在容置空间431的内壁中。请参见图10,所述荧光转换层450覆盖在发光二极管晶粒420的表面,发光二极管晶粒420所发出的光在经过荧光转换层450后,然后通过玻璃封装体430出射到外界。
发光二极管晶粒的安装方式并不限于上述实施方式。图11为本发明第五实施例的发光二极管封装结构500,其包括金属薄膜510,设置在金属薄膜510表面的发光二极管晶粒520及用于封装发光二极管晶粒520的玻璃封装体530,在本发明的实施例中,玻璃封装体530为凸状或子弹状的结构。金属薄膜510包括相互绝缘的第一金属层513和第二金属层514。所述发光二极管晶粒520包括第一电极521与第二电极522。与第一实施例不同的是,所述发光二极管晶粒520通过固晶胶560固定在第一金属层511的表面。发光二极管晶粒520的第一电极521和第二电极522设置在发光二极管晶粒的同一侧。所述第一电极521通过打线的方式与第一金属层513电性连接,所述第二电极522也通过打线的方式与第二金属层514电性连接。另外,发光二极管晶粒520也可以采用共晶结合或覆晶的方法设置在金属薄膜510的表面。
玻璃封装体的结构亦不限于上述实施方式。请参见图12,本发明第六实施例的发光二极管封装结构600包括金属薄膜610,设置在金属薄膜610表面的发光二极管晶粒620及用于封装发光二极管晶粒620的玻璃封装体630。金属薄膜610包括相互绝缘的第一金属层613和第二金属层614。所述发光二极管晶粒620通过固晶胶660固定在第一金属层613的表面。发光二极管晶粒620的第一电极621与第一金属层613电性连接,发光二极管晶粒620的第二电极622与第二金属层614电性连接。与第五实施例不同的是,在本实施例中,玻璃封装体630的出光面设置为平面。同时,该玻璃封装体630上也可以设置由石榴石(YAG)结构的荧光粉材料,氮化物系荧光粉材料,磷化物,硫化物或硅酸盐化合物等材料制成的荧光转换层。
应该指出,上述实施方式仅为本发明的较佳实施方式,本领域技术人员还可在本发明精神内做其它变化。这些依据本发明精神所做的变化,都应包含在本发明所要求保护的范围之内。
Claims (10)
1.一种发光二极管封装结构,其包括一金属薄膜,所述金属薄膜具有第一表面以及与第一表面相对的第二表面,并且该金属薄膜包括相互绝缘的第一金属层和第二金属层,一发光二极管晶粒设置在金属薄膜的第一表面,该发光二极管晶粒具有第一电极和第二电极,第一电极与第一金属层电性连接,第二电极与第二金属层电性连接,其特征在于,所述发光二极管封装结构进一步包括一玻璃封装体,用于密封设置在金属薄膜上的发光二极管晶粒,所述金属薄膜的第二表面显露于玻璃封装体的外部。
2.如权利要求1所述的发光二极管封装结构,其特征在于,所述发光二极管封装结构进一步包括一荧光转换层,该荧光转换层设置在玻璃封装体的表面。
3.如权利要求1所述的发光二极管封装结构,其特征在于,所述玻璃封装体包括荧光粉颗粒,所述荧光粉颗粒分散于玻璃封装体中。
4.如权利要求1所述的发光二极管封装结构,其特征在于,所述玻璃封装体内部具有一容置空间,所述发光二极管晶粒设置在该容置空间内。
5.如权利要求4所述的发光二极管封装结构,其特征在于,所述容置空间的内壁设置有一层荧光转换层。
6.如权利要求4所述的发光二极管封装结构,其特征在于,所述发光二极晶粒表面设置有一层荧光转换层。
7.如权利要求1至6任意一项所述的发光二极管封装结构,其特征在于,所述玻璃封装体的制作材料为SiO2或NaO.nSiO2,其中n>0。
8.一种发光二极管封装方法,其包括以下步骤:
在基体上形成一层金属薄膜,所述金属薄膜包括第一表面以及与第一表面相对的第二表面;
将金属薄膜图案化而形成相互绝缘的第一金属层和第二金属层;
在金属薄膜的第一表面设置发光二极管晶粒,所述发光二极管晶粒具有第一电极和第二电极,第一电极与第一金属层电性连接,第二电极与第二金属层电性连接;
采用玻璃材料密封设置在金属薄膜上的发光二极管晶粒以形成一玻璃封装体;
移除基体而显露出金属薄膜的第二表面。
9.如权利要求8所述的发光二极管封装方法,其特征在于,在密封过程之中,在玻璃封装中添加荧光粉颗粒,使荧光粉颗粒分散在玻璃封装体中。
10.如权利要求8所述的发光二极管封装方法,其特征在于,在密封过程中,在玻璃封装体内部形成一容置空间,所述发光二极管晶粒设置在该容置空间内,荧光转换层设置在容置空间的内壁或发光二极管晶粒的表面。
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CN101630668A (zh) * | 2008-07-15 | 2010-01-20 | 先进开发光电股份有限公司 | 化合物半导体元件及光电元件的封装结构及其制造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103254889A (zh) * | 2012-02-16 | 2013-08-21 | 展晶科技(深圳)有限公司 | 荧光粉薄膜制作方法及相应的发光二极管封装方法 |
CN103254889B (zh) * | 2012-02-16 | 2015-12-09 | 赛恩倍吉科技顾问(深圳)有限公司 | 荧光粉薄膜制作方法及相应的发光二极管封装方法 |
CN104752582A (zh) * | 2013-12-31 | 2015-07-01 | 展晶科技(深圳)有限公司 | 发光二极管封装方法 |
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KR20120007968A (ko) | 2012-01-25 |
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