CN102315093B - 沟槽填充后平坦化的工艺方法 - Google Patents
沟槽填充后平坦化的工艺方法 Download PDFInfo
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CN 201010221597 CN102315093B (zh) | 2010-07-08 | 2010-07-08 | 沟槽填充后平坦化的工艺方法 |
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CN102315093A CN102315093A (zh) | 2012-01-11 |
CN102315093B true CN102315093B (zh) | 2013-04-24 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102956444B (zh) * | 2011-08-16 | 2015-09-23 | 中国科学院微电子研究所 | 高压器件的外延层制造方法 |
CN103779228B (zh) * | 2012-10-24 | 2016-12-21 | 上海华虹宏力半导体制造有限公司 | 一种改善超级结深沟槽外延层平坦化的方法 |
CN103928325B (zh) * | 2013-01-10 | 2016-11-09 | 上海华虹宏力半导体制造有限公司 | 超级结器件边缘外延平坦化方法 |
CN104347346B (zh) * | 2013-08-05 | 2017-06-06 | 上海华虹宏力半导体制造有限公司 | 不同结构的深沟槽平坦化方法 |
CN111370297A (zh) * | 2020-04-02 | 2020-07-03 | 上海华虹宏力半导体制造有限公司 | 超级结的制造方法 |
CN111540672B (zh) * | 2020-06-22 | 2020-10-16 | 中芯集成电路制造(绍兴)有限公司 | 超结器件的制造方法及超结器件 |
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US5858830A (en) * | 1997-06-12 | 1999-01-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making dual isolation regions for logic and embedded memory devices |
CN101866833A (zh) * | 2009-04-16 | 2010-10-20 | 上海华虹Nec电子有限公司 | 用于填充沟槽的硅外延方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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US5858830A (en) * | 1997-06-12 | 1999-01-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making dual isolation regions for logic and embedded memory devices |
CN101866833A (zh) * | 2009-04-16 | 2010-10-20 | 上海华虹Nec电子有限公司 | 用于填充沟槽的硅外延方法 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131217 |
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Effective date of registration: 20131217 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |