CN102306684A - Selective emitter with third-stage doping level and preparation method thereof - Google Patents
Selective emitter with third-stage doping level and preparation method thereof Download PDFInfo
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- CN102306684A CN102306684A CN201110276579A CN201110276579A CN102306684A CN 102306684 A CN102306684 A CN 102306684A CN 201110276579 A CN201110276579 A CN 201110276579A CN 201110276579 A CN201110276579 A CN 201110276579A CN 102306684 A CN102306684 A CN 102306684A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention relates to a selective emitter and a preparation method thereof, applying to the preparation of a crystalline silicon solar battery selective emitter. The invention aims at solving the problems in the preparation of a second-stage doping selective emitter prepared by a printing and doping method, such as great influence of the doping effect due to the indirect diffusion, great printing ink reaction residue, difficulty in cleaning of the silicon chip after diffusion and the like; according to the invention, the function difference characteristic between a main line and a subline of a solar battery metal electrode is fully utilized, and doping printing ink is printed on the silicon chip by adopting a printing pattern containing the main line with low-ink-filling rate. After heat treatment, a selective emitter structure with the third-stage doping level can be prepared: the subline 1 covered with the printing ink and a main line pattern array 3 covered with the printing ink achieve severe doping; a non-electrode zone 2 without the printing ink achieves light doping; and a main line blank region 4 without the printing ink achieves moderate doping. By adopting the method, the rate of consumption of the doping printing ink can be reduced by more than 20%, the indirect diffusion influence from the printing ink in the main line region can be further reduced effectively, the printing ink reaction residues are reduced, and the silicon chip is easier to clean after diffusion.
Description
Affiliated technical field
The present invention relates to a kind of selective emitter its preparation method of three grades of doped level, be applicable to the selective emitter preparation of crystal-silicon solar cell.
Background technology
The impurity element that mixes opposite types on the top layer of P type or N type silicon chip can be prepared the core texture of the crystalline silicon sun: PN junction, this doping thin layer is also referred to as emitter.With respect to the same sex emitter that evenly mixes in the top layer, selective emitter can make solar cell obtain higher photoelectric conversion efficiency.Mostly present selective emitter is the secondary doped structure: near the zone of metal electrode to be prepared on the silicon chip reaches, carry out severe and mix, and slightly mix at non-electrode zone.Its preparation method has mask diffusion method, anti-etching method, laser doping method, printing doping method etc., wherein prints doping method to adopt complete electrode pattern to print doping printing ink, and the main line zone is covered by printing ink fully; And the main line area accounts for the near half the of entire electrode area; Cause in the main line zone doping quantity of ink many and concentrate, during High temperature diffusion, this zone impurity element more than needed in a large number evaporate in the atmosphere; Remote-effects to the non-electrode zone of main line periphery are comparatively serious; Cause the selective doping poor effect, and the printing ink reaction residue is more, diffusion back silicon chip is difficult for being cleaned totally.
Summary of the invention
The objective of the invention is: overcome above-mentioned printing doping method and prepare the problem that the secondary selective emitter exists, propose selective emitter of a kind of three grades of doped structures and preparation method thereof, can satisfy requirement on industrial application.
The technical scheme that the present invention adopts is:
Adopt the main line pattern of the low rate of stopping out to substitute the conventional main line pattern of stopping out fully; With the adulterated oil ink print to pending silicon chip; After Overheating Treatment; The by-pass zone that covers printing ink can form severe with the main line graphic array zone that covers printing ink and mix, and the non-electrode zone that does not cover printing ink forms slight doping, and the main line white space that does not cover printing ink then forms medium doped.Like this, whole selective emitter has severe, moderate, slight three grades of doped structures.
Above-mentioned three grades of doped level selective emitting electrode structures have taken into full account the function difference of crystal-silicon solar cell metal electrode main line and by-pass; The by-pass zone of silicon chip obtains severe and mixes; Can improve the ohmic contact of silicon chip and metal electrode by-pass, be beneficial to collected current; And mix for severe in the main line zone and moderate is intersected; Can guarantee enough sintering junction depths; Though it is slightly poor with the contact performance of metal electrode main line; But this can influence the performance of solar cell hardly, and this is because the main effect of metal electrode main line is the electric current that compiles on the metal electrode by-pass, rather than from the silicon substrate collected current.
The invention has the beneficial effects as follows: can reduce the doping printing ink total burn-off more than 20%; Reduce the influence of indirect diffusion couple doping effect; The reaction residue of printing ink tails off, and diffusion back silicon chip is more prone to clean up, and is applicable to the preparation of crystalline silicon solar battery selective emitter.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is further specified
Fig. 1 is a doping printing ink distribution situation sketch map on the silicon chip among the present invention
Among the figure, 1. cover the by-pass of printing ink; 2. the non-electrode zone that does not have printing ink; 3. cover the main line graphic array zone of printing ink; 4. the main line white space that does not have printing ink.
The practical implementation method
At first, doping printing ink is printed onto pending silicon chip front surface according to specific pattern, this specific printed patterns comprises four parts: the by-pass 1 that covers printing ink; Cover the main line graphic array zone 3 of printing ink, these figures are evenly distributed in the main line zone relatively, and its shape comprises rectangle, but is not limited only to rectangle, also can be circle, polygon, linear etc., and their area sums account for 10%～60% of main line area; The main line white space 4 of no printing ink; The non-electrode zone 3 of no printing ink.The live width of main line and by-pass is not less than the corresponding metal electrode main line and the live width of by-pass.
Then, the silicon chip that prints doping printing ink is carried out middle Low Temperature Heat Treatment, temperature is: between 100 ℃～400 ℃, the solvent evaporation in the printing ink is fallen, this processing can be carried out in specialized apparatus, also can in silicon chip is slowly sent into the process of diffusion furnace, accomplish.
At last, above-mentioned silicon chip is slowly sent into high temperature dispersing furnace, diffusion temperature: 800 ℃～950 ℃, in 20 minutes～120 minutes processing time, whole process silicon chip remains in the stove.
Like this, the by-pass zone 1 that is covered by printing ink will obtain the severe doping with main line graphic array zone 3, and its square resistance is: 20 Ω/～50 Ω/; The indirect diffusion that the non-electrode zone 2 of no printing ink receives is less, forms slightly to mix, and can during High temperature diffusion, can feed the gas of taking impurity source and regulate doping level, and its square resistance is: 60 Ω/～150 Ω/; The main line white space 4 of no printing ink obtains medium doped because of the more indirect diffusion that receives from graphic array zone 3 printing ink, and its square resistance is between severe doped region and slight doped region.
Claims (6)
1. doping printing ink is printed onto on the silicon chip according to specific pattern, then silicon chip is carried out a series of heat treatments, it is characterized in that: through aforesaid operations, can on silicon chip, obtain to have severe, the selective emitter of moderate and slight three grades of doped level.
2. according to right 1 described specific printed patterns; Be primarily characterized in that: the main line in the pattern is to be made up of graphic array; Its shape can be rectangle, circle, polygon, lines etc.; These figures are evenly distributed in the main line zone relatively, and its area sum can account for 10%～60% of the main line zone gross area.
3. according to right 1 described heat treatment, be primarily characterized in that: Low Temperature Heat Treatment and two processes of High temperature diffusion in comprising.
4. according to right 3 described middle low temperature heat treatment, be primarily characterized in that: heating-up temperature is: 100 ℃～400 ℃.
5. according to right 3 described high-temperature diffusion process, be primarily characterized in that: whole diffusion process silicon chip is in the diffusion furnace all the time, furnace temperature: 800 ℃～950 ℃, and the processing time: 20 minutes～120 minutes.
6. the selective emitter of three grades of doped level according to claim 1; Be primarily characterized in that: after heat treatment is accomplished; The by-pass zone that covers printing ink on the silicon chip obtains severe with the main line graphic array zone that covers printing ink and mixes, and its square resistance is: 20 Ω/～50 Ω/; The non-electrode zone of no printing ink obtains slight the doping, and its square resistance is: 60 Ω/～180 Ω/; The main line white space of no printing ink obtains medium doped, and its square resistance is between above-mentioned severe doped region and slight doped region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110276579.0A CN102306684B (en) | 2011-09-19 | 2011-09-19 | Selective emitter of a kind of three grades of doped level and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110276579.0A CN102306684B (en) | 2011-09-19 | 2011-09-19 | Selective emitter of a kind of three grades of doped level and preparation method thereof |
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| CN102306684A true CN102306684A (en) | 2012-01-04 |
| CN102306684B CN102306684B (en) | 2016-01-20 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110010704A (en) * | 2018-12-11 | 2019-07-12 | 艾尔碧全球绿色科技有限公司 | Polychrome solar electrical energy generation module and its manufacturing method |
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| CN1241298A (en) * | 1996-12-24 | 2000-01-12 | 依麦克Vzw | Semiconductor device with selectively diffused regions |
| CN101523615A (en) * | 2006-08-22 | 2009-09-02 | Bp太阳能旗舰股份有限公司 | Photovoltaic cell and production thereof |
| CN201490199U (en) * | 2009-08-04 | 2010-05-26 | 天威新能源(成都)电池有限公司 | Crystalline silicon solar battery of selective emitter |
| CN101826573A (en) * | 2009-12-25 | 2010-09-08 | 欧贝黎新能源科技股份有限公司 | Method for preparing semiconductor secondary grid-metal primary grid crystalline silicon solar battery |
| US20100279454A1 (en) * | 2009-04-29 | 2010-11-04 | Hans-Juergen Eickelmann | Method of Manufacturing a Solar Cell |
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2011
- 2011-09-19 CN CN201110276579.0A patent/CN102306684B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1241298A (en) * | 1996-12-24 | 2000-01-12 | 依麦克Vzw | Semiconductor device with selectively diffused regions |
| CN101523615A (en) * | 2006-08-22 | 2009-09-02 | Bp太阳能旗舰股份有限公司 | Photovoltaic cell and production thereof |
| US20100279454A1 (en) * | 2009-04-29 | 2010-11-04 | Hans-Juergen Eickelmann | Method of Manufacturing a Solar Cell |
| CN201490199U (en) * | 2009-08-04 | 2010-05-26 | 天威新能源(成都)电池有限公司 | Crystalline silicon solar battery of selective emitter |
| CN101826573A (en) * | 2009-12-25 | 2010-09-08 | 欧贝黎新能源科技股份有限公司 | Method for preparing semiconductor secondary grid-metal primary grid crystalline silicon solar battery |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110010704A (en) * | 2018-12-11 | 2019-07-12 | 艾尔碧全球绿色科技有限公司 | Polychrome solar electrical energy generation module and its manufacturing method |
| CN110010704B (en) * | 2018-12-11 | 2022-07-15 | 艾尔碧全球绿色科技有限公司 | Multicolor solar power generation module and manufacturing method thereof |
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| CN102306684B (en) | 2016-01-20 |
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Owner name: SUZHOU SOLARING TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: LIU FENG Effective date: 20130802 |
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Effective date of registration: 20130802 Address after: Wujiang Economic Development Zone, Suzhou City, Jiangsu province 215200 Pang Pang Jin Road No. 1801 gold industrial square 2 Applicant after: Suzhou SolaRing Technology Co., Ltd. Address before: 104 room 800, solar energy research institute, physics building, Shanghai Jiao Tong University, 200240 Dongchuan Road, Shanghai, Minhang District Applicant before: Liu Feng |
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