CN102290457A - Field-effect solar cell - Google Patents
Field-effect solar cell Download PDFInfo
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- CN102290457A CN102290457A CN2011102543808A CN201110254380A CN102290457A CN 102290457 A CN102290457 A CN 102290457A CN 2011102543808 A CN2011102543808 A CN 2011102543808A CN 201110254380 A CN201110254380 A CN 201110254380A CN 102290457 A CN102290457 A CN 102290457A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention relates to a semiconductor solar cell, in particular to a field-effect solar cell. A bottom ohmic electrode, a substrate, an intrinsic semiconductor material layer, a transparent insulating layer and a transparent conducting film are sequentially arranged from bottom to top. A side ohmic electrode is produced on one side or two sides of the surface of the intrinsic semiconductor material layer through etching and sputtering technologies. A metal grid is produced on the transparent conducting film and is connected with an external power supply. The bottom ohmic electrode is produced on the bottom surface of the substrate and is grounded. Compared with the traditional pn-junction solar cell, the electric field area is more close to the surface, the width is larger, the sunlight absorption is facilitated more greatly and the efficiency is improved. GaN and ZnO equivalent-width direct band gap intrinsic semiconductor solar cells can be produced by adopting the method to avoid the difficulty in p-type doping. Grid voltage is adjustable within a certain range. By applying strong grid voltage, the influences of metal and semiconductor work function difference and insulating layer unintentionally-doped charges to a surface electric field can be effectively eliminated.
Description
Technical field
The present invention relates to a kind of semiconductor solar cell, particularly relate to a kind of by adding that at nesa coating-transparent insulating layer-semiconductor structure solar cell grid voltage forms the field effect solar cell of surface field.
Background technology
At present, its principle of widely used solar cell is to utilize intrinsic materials such as Si base and GaAs base, make the pn joint solar cell by semiconductor process techniques such as ion doping, extensions, sunlight is injected semiconductor internal excitation electron-hole pair, internal electric field by the pn interface is separated to the two poles of the earth with electron-hole pair, form with the opposite photovoltage of internal electric field in p type and n type intrinsic material surface, again by the Ohm contact electrode derived current.Though the development of pn joint solar cell is ripe, but still there is following problem: though the pn of shallow junction solar cell knot is near the surface, but still have most of short wavelength's sunlight because of the penetration depth in material very short (0.1～0.01 μ m), just be absorbed before entering the interface, can't realize the separation of electron-hole pair, limit efficient; Broad stopband direct band gap intrinsic material ZnO, the p type doping process of GaN sill is still undesirable, can't the good pn joint solar cell of processability; Because the restriction of junction voltage and energy gap, open circuit voltage is less.
Chinese patent CN102084491A discloses a kind of heterojunction solar battery and preparation method thereof.Heterojunction solar battery has at least one heterojunction layer that absorber layers that silicon makes and doped semiconductor materials are made, and absorber layers has base doping, and the band gap of doped semiconductor materials is different from the band gap of the silicon of absorber layers.Absorber layers towards heterojunction layer direction have doped layer at the interface, the doping content of described doped layer is higher than the base doping concentration of absorber layers.Result as this dopant profiles has produced field effect, and this field effect prevents the electric charge carrier of generation in the absorber layers to the interfacial diffusion between absorber layers and heterojunction layer, and prevents compound there.
Summary of the invention
The purpose of this invention is to provide a kind of field effect solar cell that adds the nesa coating-transparent insulating layer-semiconductor structure of grid voltage.
The present invention is with the close surface of its potential field, save the pn knot, need not the p type and mix, can be applicable to the broad stopband intrinsic material of p types doping difficulties such as GaN, ZnO, add the grid voltage adjustable extent and can better solve the problems referred to above that existing solar cell exists to improve open circuit voltage greatly.
The present invention utilizes grid voltage excitating surface electric field to absorb the solar cell of luminous energy.
The present invention is provided with the bottom Ohmic electrode from bottom to up successively, substrate, layer of intrinsic semiconductor material, transparent insulating layer, nesa coating, described layer of intrinsic semiconductor material by epitaxial growth on substrate, growth layer of transparent insulating barrier on layer of intrinsic semiconductor material, growth layer of transparent conducting film on transparent insulating layer, make the side Ohmic electrode in one or both sides, layer of intrinsic semiconductor material surface by etching and sputtering technology, on nesa coating, make metal gates, the metal gates external power supply, make the bottom Ohmic electrode in the substrate bottom surface, bottom Ohmic electrode ground connection.
Described substrate can adopt p type substrate or n type substrate.
The thickness of described nesa coating can be 50～150nm; Described nesa coating can be selected ITO, CTO, InO, ZnO, SnO for use
2, GaN, SiC, diamond like carbon, Graphene and conventional known nesa coating.
The thickness of described transparent insulating layer can be 10～50nm; The optional SiO that uses of described transparent insulation layer material
2, Si
3N
4, MgO
2, Al
2o
3, SiO, TiO
2, TaO
2, Nb
2O
5, ZnS and conventional known transparent insulation material.
Described layer of intrinsic semiconductor material can be selected Si, Ge, GaAs, InP, ZnO, GaN, InGaN, SiC and conventional known photovoltaic material layer for use.
Described metal gates can be selected Al/Ti/Pd/Ag for use, AgZn alloy, Ti/Al/Ni/Au, a kind of as grid material among the Ag/Ti etc.
Described metal gates can be selected Al/Ti/Pd/Ag for use for Si, can select the AgZn alloy for use for GaAs, can select Ti/Al/Ni/Au for use for GaN, can select for use Ag/Ti as grid material for ZnO.
The characteristics of the nesa coating-transparent insulating layer that adds grid voltage-semiconductor structure solar cell that the present invention proposes are: 1) electric field region of nesa coating-transparent insulating layer-semiconductor structure solar cell is than the more close surface of traditional pn joint solar cell, and width is big, more help the absorption of sunlight, it is right particularly to separate by the short short-wave band excitation electron-hole of penetration depth by surface field, thereby has improved efficient.2) nesa coating-transparent insulating layer-semiconductor structure solar cell can be applicable to make GaN, and the wide direct band gap intrinsic material of ZnO solar cell is to avoid the difficulty that its p type mixes.3) grid voltage is adjustable in certain limit, by adding stronger grid voltage, has effectively eliminated the involuntary doping electric charge of metal and semiconductor work function difference and insulating barrier to surperficial electric field effects, improves open circuit voltage.
Description of drawings
Fig. 1 adds the typical structure generalized section of photovoltaic grid voltage for the present invention.In Fig. 1, respectively be labeled as: power supply 1, nesa coating 2, transparent insulating layer 3, layer of intrinsic semiconductor material 4, substrate 5, bottom Ohmic electrode 6, ground connection 7, metal gates 8, side Ohmic electrode 9.
Embodiment
Referring to Fig. 1, the embodiment of the invention is provided with bottom Ohmic electrode 6 from bottom to up successively, substrate 5, layer of intrinsic semiconductor material 4, transparent insulating layer 3, nesa coating 2, described layer of intrinsic semiconductor material 4 by epitaxial growth on substrate 5, growth layer of transparent insulating barrier 3 on layer of intrinsic semiconductor material 4, growth layer of transparent conducting film 2 on transparent insulating layer 3, make side Ohmic electrode 9 in layer of intrinsic semiconductor material 4 surperficial one or both sides by etching and sputtering technology, on nesa coating 2, make metal gates 8, metal gates 8 external power supplys 1, make bottom Ohmic electrode 6 in substrate 5 bottom surfaces, bottom Ohmic electrode 6 ground connection (in Fig. 1, being labeled as 7).
Described substrate can adopt p type substrate or n type substrate.On the substrate 5 by epitaxial growth layer of intrinsic semiconductor material 4, then at layer of intrinsic semiconductor material 4 superficial growth layer of transparent insulating barriers 3, follow growth layer of transparent conducting film 2 on transparent insulating layer 3, then make side Ohmic electrode 9 in certain one or both sides, layer of intrinsic semiconductor material 4 surface by etching and sputtering technology, on nesa coating 2, make metal gates 8, make bottom Ohmic electrode 6 at last in substrate 5 bottom surfaces.According to the difference of substrate conduction type, this structure battery of n type substrate adds negative-gate voltage, and the battery of p type substrate adds positive gate voltage, and this structure solar cell bottom Ohmic electrode ground connection (in Fig. 1, being labeled as 7).Having under the situation of illumination, additional power source provides enough big grid voltage on nesa coating-transparent insulating layer-semiconductor structure solar cell, make transparent insulating layer 3 and layer of intrinsic semiconductor material 4 interfaces form surface field and inversion layer, the surface electrical place absorbs sunlight and produces electron-hole pair, under the surface field effect, the photo-generated carrier that is subjected to the electric field force action direction to point to the surface is derived by surface inversion layer and side Ohmic electrode 9, the photo-generated carrier that is subjected to the electric field force action direction to point to the bottom is derived by bottom Ohmic electrode 6, make surface and bottom surface form electrical potential difference, thereby transform light energy is become electric energy.
The present invention produces surface field as the light absorption district by grid voltage at transparent insulating layer and intrinsic material interface, make and be subjected to sunlight to excite the electron-hole pair of formation to separate, under electric field action, charge carrier with the substrate conductivity type opposite in the intrinsic material drifts about to the surface, Ohmic electrode by inversion layer and side is derived, and the charge carrier identical with the substrate conduction type then drifts about downwards and be diffused into the bottom surface Ohmic electrode and derive.
Grid voltage of the present invention provides by additional power source, and connected mode is the difference according to the substrate conduction type, and the battery of n type substrate adds negative-gate voltage, and the battery of p type substrate adds positive gate voltage, bottom Ohmic electrode ground connection.
The grid voltage of described battery is by the adjustable external power of 1～10V, produce enough big voltage, make surface field width of the present invention (being width of depletion region) reach maximum, and the inversion layer of the high conductivity that forms, and be connected with the side Ohmic electrode, formation is similar to the structure of few sub-channel, derives minority carrier jointly.
Nesa coating of the present invention adopts than the wide electric conducting material of uptake zone semi-conducting material energy gap, make surface field be distributed in the whole solar cell surface, for make the antireflective wavelength drop on the semi-conducting material absorption intensity the strongest near, the thickness of design nesa coating is at 50～150nm, according to the difference of semi-conducting material, nesa coating can be selected ITO, CTO, InO, ZnO, SnO for use
2, GaN, SiC, diamond like carbon, Graphene and conventional known nesa coating.
The transparent insulating layer of transparent insulation layer thickness of the present invention between 10～50nm is enough thick to enter nesa coating-transparent insulating layer-semiconductor structure inside solar energy battery with the blocking-up electronics by tunnel effectiveness, according to the difference of semi-conducting material, the optional SiO that uses of transparent insulation layer material
2, Si
3N
4, MgO
2, Al
2o
3, SiO, TiO
2, TaO
2, Nb
2O
5, ZnS and conventional known transparent insulation material.
Layer of intrinsic semiconductor material of the present invention can be Si, Ge, GaAs, InP, ZnO, GaN, InGaN, SiC and conventional known photovoltaic material layer.
Metal gates of the present invention can be selected Al/Ti/Pd/Ag for use for Si, can select the AgZn alloy for use for GaAs, can select Ti/Al/Ni/Au for use for GaN, can select for use Ag/Ti as grid material for ZnO.
Below provide specific embodiment.
Embodiment 1
Employing GaN is that the concrete structure of the nesa coating-transparent insulating layer-semiconductor structure solar cell of semi-conducting material is, growth successively on n type Si substrate＜111〉face: low temperature GaN (LT-GaN) resilient coating, the involuntary Doped n-type GaN absorbed layer of high temperature, Si
3N
4Transparent insulating layer, nesa coating ITO and side Ohmic electrode, metal gates and bottom Ohmic electrode.Other semiconductor absorbing material is also according to the parameter growth of this structure basis with match materials.Then utilize external power that grid voltage between negative 1～10V is provided, the bottom Ohmic electrode ground connection of nesa coating-transparent insulating layer-semiconductor structure solar cell (nesa coating-transparent insulating layer-semiconductor structure solar cell then adds positive gate voltage if adopt p type substrate).
The growing method of GaN nesa coating-transparent insulating layer-semiconductor structure solar cell is, adopt metal oxide chemical vapor deposition equipment MOCVD low-temperature epitaxy GaN resilient coating on n type Si substrate＜111〉face, growth temperature is 400-700 ℃ of scope, thickness is in 20～200nm scope, then the GaN resilient coating of low-temperature epitaxy carried out high annealing about 1000 ℃.Follow high growth temperature GaN absorbed layer, growth temperature is 1000～1100 ℃ of scopes, and thickness is in the 500-1500nm scope.The transparent insulation layer film adopts plasma reinforced chemical vapour deposition PECVD according to the thick Si of conventional method growth 10～50nm
3N
4Then by the nesa coating ITO layer about vacuum evaporation making 50～150nm, then make the Ti/Ni/Au Ohmic electrode in the absorbing material side by etching and ion sputtering, on transparent insulating layer, make the Ti/Al/Ni/Au metal gates by etching and ion sputtering, plate the Al Ohmic electrode by sputtering at substrate at last.
Having under the situation of illumination, external power provides enough big grid voltage between the negative 1-10V, make transparent insulating layer and GaN absorbing material interface form surface field and inversion layer, the surface electrical place absorbs sunlight and produces electron-hole pair, under the surface field effect, derive by surface inversion layer and Ohmic electrode in the hole, and electronics is derived by the bottom surface Ohmic electrode, thereby transform light energy is become electric energy.
Embodiment 2
Employing Si is that the concrete structure of the nesa coating-transparent insulating layer-semiconductor structure solar cell of semi-conducting material is, growth successively on p type substrate Si substrate＜100〉face: intrinsic Si epitaxial loayer, SiO
2Transparent insulating layer, nesa coating ITO and side Ohmic electrode, metal gates are made the bottom surface Ohmic electrode at last.Then utilize external power that grid voltage between positive 1～10V is provided, the bottom surface Ohmic electrode ground connection of nesa coating-transparent insulating layer-semiconductor structure solar cell (nesa coating-transparent insulating layer-semiconductor structure solar cell then adds negative-gate voltage if adopt n type substrate).
The growing method of Si nesa coating-transparent insulating layer-semiconductor structure solar cell is, adopting metal oxide chemical vapor deposition equipment MOCVD is reacting gas with hydrogen, silane on p type Si substrate＜100〉face, growth Si intrinsic epitaxial loayer, growth temperature is at 150～250 ℃, thickness is in 250～500nm scope, utilize Vacuum Coating method then, the thick SiO of preparation one deck 10～50nm on Si intrinsic epitaxial loayer
2Transparent insulating layer, make the thick nesa coating ITO layer of 50～150nm by vacuum evaporation then, then make the Al/Ti/Pd/Ag Ohmic electrode in the absorbing material side by etching and ion sputtering, on transparent insulating layer, make the Al/Ti/Pd/Ag metal gates by etching and ion sputtering, plate the Al Ohmic electrode by sputtering at substrate at last.
Having under the situation of illumination, external power provides enough big grid voltage between positive 1～10V, make transparent insulating layer and Si absorbing material interface form surface field and inversion layer, the surface electrical place absorbs sunlight and produces electron-hole pair, under the surface field effect, electronics is derived by surface inversion layer and Ohmic electrode, and derive by the bottom surface Ohmic electrode in the hole, thereby transform light energy is become electric energy.
The invention provides a kind of thinking and method of solar cell, nesa coating-the transparent insulating layer that relates to-semiconductor structure solar cell has potential field near the surface, need not the p type mixes, can be applicable to the broad stopband intrinsic material of p type doping difficulty, add the big characteristics of grid voltage adjustable extent.The method and the approach of this technical scheme of specific implementation are a lot; the above only is a preferred implementation of the present invention; under the prerequisite that does not break away from the principle of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.All can be realized for each clear and definite part in the present embodiment with prior art.
Claims (9)
1. field effect solar cell, it is characterized in that being provided with successively from bottom to up the bottom Ohmic electrode, substrate, layer of intrinsic semiconductor material, transparent insulating layer, nesa coating, described layer of intrinsic semiconductor material by epitaxial growth on substrate, growth layer of transparent insulating barrier on layer of intrinsic semiconductor material, growth layer of transparent conducting film on transparent insulating layer, make the side Ohmic electrode in one or both sides, layer of intrinsic semiconductor material surface by etching and sputtering technology, on nesa coating, make metal gates, the metal gates external power supply, make the bottom Ohmic electrode in the substrate bottom surface, bottom Ohmic electrode ground connection.
2. a kind of field effect solar cell as claimed in claim 1 is characterized in that described substrate adopts p type substrate or n type substrate.
3. a kind of field effect solar cell as claimed in claim 1, the thickness that it is characterized in that described nesa coating is 50～150nm.
4. as claim 1 or 3 described a kind of field effect solar cells, it is characterized in that described nesa coating selects ITO, CTO, InO, ZnO, SnO for use
2, GaN, SiC, diamond like carbon, Graphene and conventional known nesa coating.
5. a kind of field effect solar cell as claimed in claim 1, the thickness that it is characterized in that described transparent insulating layer is 10～50nm.
6. as claim 1 or 5 described a kind of field effect solar cells, it is characterized in that described transparent insulating layer material selection SiO
2, Si
3N
4, MgO
2, Al
2o
3, SiO, TiO
2, TaO
2, Nb
2O
5, ZnS and conventional known transparent insulation material.
7. a kind of field effect solar cell as claimed in claim 1 is characterized in that described layer of intrinsic semiconductor material selects Si, Ge, GaAs, InP, ZnO, GaN, InGaN, SiC and conventional known photovoltaic material layer for use.
8. a kind of field effect solar cell as claimed in claim 1 is characterized in that described metal gates selects Al/Ti/Pd/Ag for use, AgZn alloy, Ti/Al/Ni/Au, a kind of as grid material among the Ag/Ti.
9. a kind of field effect solar cell as claimed in claim 1 is characterized in that described metal gates selects Al/Ti/Pd/Ag for use for Si, selects the AgZn alloy for use for GaAs, selects Ti/Al/Ni/Au for use for GaN, selects for use Ag/Ti as grid material for ZnO.
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| CN2011102543808A CN102290457A (en) | 2011-08-31 | 2011-08-31 | Field-effect solar cell |
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| CN2011102543808A CN102290457A (en) | 2011-08-31 | 2011-08-31 | Field-effect solar cell |
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| CN102290457A true CN102290457A (en) | 2011-12-21 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103346172A (en) * | 2013-06-08 | 2013-10-09 | 英利集团有限公司 | Hetero-junction solar battery and preparation method thereof |
Citations (4)
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|---|---|---|---|---|
| US4495375A (en) * | 1982-09-18 | 1985-01-22 | Battelle-Institut E.V. | MIS or SIS Solar cells |
| CN201185191Y (en) * | 2008-02-01 | 2009-01-21 | 东捷科技股份有限公司 | Silicon-based thin-film solar cell with multiple stacks |
| WO2009024512A1 (en) * | 2007-08-17 | 2009-02-26 | Basf Se | Halogen-containing perylenetetracarboxylic acid derivatives and the use thereof |
| CN101567404A (en) * | 2008-04-24 | 2009-10-28 | 东捷科技股份有限公司 | Multisection silicon-based film solar cell structure and process thereof |
-
2011
- 2011-08-31 CN CN2011102543808A patent/CN102290457A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4495375A (en) * | 1982-09-18 | 1985-01-22 | Battelle-Institut E.V. | MIS or SIS Solar cells |
| WO2009024512A1 (en) * | 2007-08-17 | 2009-02-26 | Basf Se | Halogen-containing perylenetetracarboxylic acid derivatives and the use thereof |
| CN201185191Y (en) * | 2008-02-01 | 2009-01-21 | 东捷科技股份有限公司 | Silicon-based thin-film solar cell with multiple stacks |
| CN101567404A (en) * | 2008-04-24 | 2009-10-28 | 东捷科技股份有限公司 | Multisection silicon-based film solar cell structure and process thereof |
Non-Patent Citations (1)
| Title |
|---|
| KAORI MIYAZAKI, ET. AL: "Device simulation and fabrication of field effect solar cells", 《BULL. MATER. SCI.》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103346172A (en) * | 2013-06-08 | 2013-10-09 | 英利集团有限公司 | Hetero-junction solar battery and preparation method thereof |
| WO2014194833A1 (en) * | 2013-06-08 | 2014-12-11 | 英利能源（中国）有限公司 | Heterojunction solar battery and preparation method therefor |
| CN103346172B (en) * | 2013-06-08 | 2016-03-02 | 英利集团有限公司 | Heterojunction solar battery and preparation method thereof |
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