CN102280712A - Isotropic double-negative artificial material - Google Patents
Isotropic double-negative artificial material Download PDFInfo
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- CN102280712A CN102280712A CN2011101397541A CN201110139754A CN102280712A CN 102280712 A CN102280712 A CN 102280712A CN 2011101397541 A CN2011101397541 A CN 2011101397541A CN 201110139754 A CN201110139754 A CN 201110139754A CN 102280712 A CN102280712 A CN 102280712A
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Abstract
The invention relates to an isotropic double-negative artificial material and belongs to the technical field of functional materials. The double-negative artificial material in a three-dimensional structure is formed by periodic dense accumulation of units; the units of the double-negative artificial material in the three-dimensional structure comprise a dielectric material cube and double-negative structural units positioned on adjacent three surfaces in the dielectric material cube; each double-negative structural unit comprises a dielectric substrate, a metal split ring resonator and a metal fine wire; each metal split ring resonator is positioned on the front surface of the dielectric substrate and comprises two split rings with different sizes and reverse openings, wherein each small split ring is sheathed in the big split ring; each metal fine wire is positioned on the back surface of the dielectric substrate and is parallel to the connection line between centers of openings of the two split rings, and the distance between each metal fine wire and the connection line is equivalent to the thickness of the dielectric substrate; and in the units of the double-negative artificial material in the three-dimensional structure, the metal fine wires of the three double-negative structural units are pairwise vertical. The double-negative artificial material provided by the invention has the characteristics of three-dimensional structure and isotropy, and can be applied in a high-power microwave millimeter-wave source for exciting microwave millimeter waves.
Description
Technical field
The invention belongs to technical field of function materials, relate to artificial structure's material, specifically refer to a kind of isotropic two negative artificial materials.
Background technology
Two negative artificial materials (Double-Negative Metamaterials) are meant that a kind of dielectric constant and magnetic permeability are the dielectric material of negative value simultaneously.When electromagnetic wave was propagated at it, the relation between wave vector k, electric field E and the magnetic field H met Left Hand Rule, and therefore two negative artificial materials are also referred to as " left-handed materials ".Two negative artificial materials have some unusual electromagnetic propertys, and for example Fu refractive index, reverse Cerenkov radiation, reverse Doppler effect, reflexed are penetrated law etc.The realization of two negative artificial materials is chosen as one of 2003 year ten big technological breakthroughs by U.S.'s " science " magazine." invisible clothes " that utilized meta-materials (Metamaterials) to make in 2006 is chosen as one of ten big technological breakthroughs then once again by U.S.'s " science " magazine.U.S.'s " science " magazine in 2010 is chosen as over 10 years scientific circles one of " ten big excellent opinions (Insights of the Decade) " with meta-materials.
Calendar year 2001, the structure list negative permittivity material that people such as R.A.Shelby and D.R.Smith propose based on J.B.Pendry, the thought of single negative magnetic-inductive capacity material have realized that first the real part of effective dielectric constant and magnetic permeability is negative two negative artificial material.Subsequently, A.Grbic and G.V.Eleftheriades in reported first in 2002 can realize being similar to the reradiation of reverse Cerenkov radiation based on the CPW (coplanarwaveguide) of two negative artificial materials.2008, the people such as S.Antipov of Argonne National Laboratory reported in a kind of reverse Cerenkov radiation that is produced by electronics group of having filled the TM ripple propagated in the rectangular waveguide of two negative artificial materials and indirect verification.Prepared two negative artificial material mainly is one dimension, two dimension at present, and only a few is three-dimensional two negative artificial material, and selected dielectric substrate such as FR-4 medium substrate are not fit to work in the vacuum environment.The dielectric substrate of the two negative artificial materials of three-dimensional of the present invention is polyimides (being used for supporting) and pottery (as pcb board), can work under vacuum and the hot environment, and be isotropic, is more suitable for being applied to the microwave and millimeter wave vacuum electron device.
Find after deliberation, when single electron passes through above two negative artificial materials with certain speed, as shown in Figure 1, upper area is vacuum (Vacuum), lower zone is the two negative artificial materials (DNMs:Double-NegativeMetamaterials) of isotropism, interface is at the x=-d place, and electronics is in a vacuum with speed
Move along the z direction, the x axle is perpendicular to interface, and y axle and z axle are parallel to interface, and electron charge is q.The zone of being filled by two negative artificial materials has reverse Cerenkov radiation generation, and the characteristic that the more worth people of allowing pays close attention to is that the ripple that withers and falls in the vacuum areas obviously is better than the vacuum area interior ripple that withers and falls in generic media top under the same situation above two negative artificial materials.Utilize above-mentioned characteristic, might realize a kind of novel plate High-Power Microwave Millimeter-Wave Source based on two negative artificial materials.
Summary of the invention
The invention provides a kind of isotropic two negative artificial materials, described two negative artificial materials are three-dimensional structure, isotropic two negative artificial materials, can be applicable to the plate High-Power Microwave Millimeter-Wave Source based on two negative artificial materials.
The technical solution adopted in the present invention is:
A kind of isotropic two negative artificial materials as shown in Figure 4, are formed along rectangular coordinate system three-dimensional periodicity dense accumulation by the two negative artificial material unit of three-dimensional structure.The two negative artificial material unit of described three-dimensional structure comprises the dielectric material cube and is arranged in two negative construction unit on three faces that the dielectric material cube has public vertex as shown in Figure 3.Wherein, described two negative construction units as shown in Figure 2, comprise one with medium substrate, the metal of the cubical identical size of face of dielectric material open a way ring resonator and metal fine; Described metal open circuit ring resonator is positioned at the medium substrate front, by two vary in size, open circuit ring that opening is opposite constitutes, its medium and small open circuit is located in the big open circuit ring; Described metal fine is positioned at the medium substrate back side, and distance parallel with the open centre line of two split rings equals dielectric substrate thickness.In the two negative artificial material unit of three-dimensional structure, the metal fine of three two negative construction units is vertical in twos.
In the technique scheme, described dielectric material cube material is a polyimides; Described medium substrate is polyimides or ceramic dielectric substrate.
Isotropic two negative artificial materials provided by the invention, can with preparation dielectric material cube and then dielectric material cube face earlier paste two negative construction units, at last with the two negative artificial material unit of three-dimensional structure along the rectangular coordinate system three-dimensional periodically the method that forms of dense accumulation prepare.Also can be with equidistant perforate on three faces of cuboid dielectric material earlier, the two sides has been prepared the method that the medium substrate of metal fine and two split rings inserts in the cuboid dielectric material hole respectively then and has realized preparation.Wherein two negative construction units can adopt the polyimides double face copper to realize through photoetching process, or the method that makes metal fine and two split rings respectively by lithography at ceramic dielectric substrate two sides depositing metal layers, then earlier realizes.
The invention provides a kind of isotropic two negative artificial materials, described two negative artificial materials have three-dimensional structure, isotropic characteristics, and its physical dimension can be in conjunction with working frequency range, processing technology flexible design.Isotropic two negative artificial materials provided by the invention can be applicable to the High-Power Microwave Millimeter-Wave Source and are used to excite microwave and millimeter wave.
Description of drawings
Fig. 1 is the schematic diagram that single electron passes through above the two negative artificial materials of isotropism.
Fig. 2 is the two negative structure that metal open circuit ring resonator (SRR) and metal fine (Rod) combine.
Fig. 3 has the two negative artificial material cellular constructions of three-dimensional symmetric isotropism.
The structural representation of the two negative artificial materials of the isotropism that Fig. 4 is made up of two negative artificial material cellular constructions.
Fig. 5 is the local enlarged diagram after opening the hole on the polyimides medium substrate of a solid cuboid.
Fig. 6,7,8 is respectively the front view of Fig. 5, vertical view and end view.
Fig. 9 is the schematic diagram of three kinds of dielectric-slabs in the through hole of packing into, and wherein A1, A2, B1, B2, C1, C2 are respectively the tow sides of A, B, C.A type dielectric-slab is packed into and is parallel to the through hole of x-y face; The Type B dielectric-slab is packed into and is parallel to the through hole of x-z face; C type dielectric-slab is packed into and is parallel to the through hole of y-z face.
Figure 10 is the rule figure of the equivalent relative dielectric constant of two negative artificial materials with frequency change.
Figure 11 is the rule figure of the equivalent relative permeability of two negative artificial materials with frequency change.
Figure 12 is the rule figure of the refractive index of two negative artificial materials with frequency change.
Embodiment
1. construct the two negative artificial materials (processing technology) of isotropism:
The structure (as Fig. 2) of utilizing metal open circuit ring resonator (SRR) and metal fine (Rod) to combine is constructed a kind of three-dimensional symmetric cellular construction (as Fig. 3) that has.With the cellular construction among Fig. 3, get up (as Fig. 4) by the some cycles assembled arrangement, thus the two negative artificial materials of the isotropism shown in the lower zone in the pie graph 1.Concrete structure size following (unit: mm): t=0.14, w=2.2, g=0.3, e=0.15, h=0.2.Simultaneously, the long 2.5mm of metal fine, the material of metal open circuit ring resonator and metal fine is a copper sheet, its thickness is 0.017mm; The length of ceramic bottom board and the wide 5mm that is, thick 0.25mm, relative dielectric constant ε
r=5.6, losstangenttan=0.0041; Unit Cycle Length among Fig. 4 is 5mm.
Because the cellular construction among Fig. 3 is difficult to directly realize that the present invention passes through in the perforate of solid polyimides medium substrate, and the dielectric-slab after the photoetching of packing in the hole of being opened is realized the two negative artificial materials of isotropism shown in Figure 4.Concrete processing technology is as follows:
1) utilize the Ultrasonic machining technology, perforate on the polyimides medium substrate of a solid cuboid, the length of cuboid is 61mm, and wide is 53mm, and height is 58mm.Open the hole respectively being parallel on x-z, x-y, the y-z face, hole length is 2.5mm, and wide is 0.284mm, and the centre distance between two holes is 5mm, and the particular location of institute's perforate also must be with reference to the concrete size in figure 6,7 and 8.
2) utilize the dual surface lithography technology, carve structure (A1, A2, B1, B2, C1, C2 are respectively the tow sides of A, B, C) as shown in Figure 9 respectively on A, B, C type ceramic substrate, structural material adopts copper sheet.Wherein, the long 61mm of the corresponding cuboid of length of A type dielectric-slab, wide correspondence is parallel to the long 2.5mm in hole on two faces of x-y face, and thick is 0.25mm; The wide 53mm of the corresponding cuboid of length of Type B dielectric-slab, wide correspondence is parallel to the long 2.5m in hole on two faces of x-z face, and thick is 0.25mm; The high 58mm of the corresponding cuboid of length of C type dielectric-slab, wide correspondence is parallel to the long 2.5mm in hole on the y-z face, and thick is 0.25mm.Simultaneously, the centre distance of the structure of being carved is 5mm.Metal open circuit ring resonator and the particular location of metal fine on three kinds of dielectric-slabs are decided by the concrete size among Fig. 9.
3) the pairing hole of respectively dielectric-slab after A, B, three kinds of photoetching treatment of C being packed into.
4) six faces at this cuboid add the thick polyimides medium substrate of 5mm that one deck can cover this plane respectively, and have been screwed this integral body respectively on six faces that newly add.
2. extract the effective dielectric constant and the magnetic permeability of the two negative artificial materials of isotropism:
Utilize the HFSS of 3 D electromagnetic simulation software that the cellular construction among Fig. 3 is carried out emulation, the S that emulation is obtained
11And S
21Amplitude and the data of phase place handle, try to achieve the equivalent relative dielectric constant and the magnetic permeability of the two negative artificial materials of isotropism at last, as shown in Figure 10 and Figure 11, the two negative frequency range of the two negative artificial materials of isotropism drops in the X-band.
Claims (2)
1. isotropic two negative artificial materials are formed along rectangular coordinate system three-dimensional periodicity dense accumulation by the two negative artificial material unit of three-dimensional structure; The two negative artificial material unit of described three-dimensional structure comprises the dielectric material cube and is arranged in two negative construction unit on three faces that the dielectric material cube has public vertex; Wherein, described two negative construction unit comprise one with medium substrate, the metal of the cubical identical size of face of dielectric material open a way ring resonator and metal fine; Described metal open circuit ring resonator is positioned at the medium substrate front, by two vary in size, open circuit ring that opening is opposite constitutes, its medium and small open circuit is located in the big open circuit ring; Described metal fine is positioned at the medium substrate back side, and distance parallel with the open centre line of two split rings equals dielectric substrate thickness; In the two negative artificial material unit of three-dimensional structure, the metal fine of three two negative construction units is vertical in twos.
2. isotropic two negative artificial materials according to claim 1 is characterized in that described dielectric material cube material is a polyimides; Described medium substrate is polyimides or ceramic dielectric substrate.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102623873A (en) * | 2012-04-13 | 2012-08-01 | 电子科技大学 | Implement method for producing high power radiation based on double negative materials |
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| US20080296710A1 (en) * | 2005-09-30 | 2008-12-04 | The Government Of The Us, As Represented By The Secretary Of The Navy | Photoconductive Metamaterials with Tunable Index of Refraction |
| CN101389998A (en) * | 2004-07-23 | 2009-03-18 | 加利福尼亚大学董事会 | Metamaterials |
| CN101673869A (en) * | 2009-10-10 | 2010-03-17 | 北京理工大学 | Preparation method for left-hand material composed of small ceramic ball and copper wire |
| CN202150553U (en) * | 2011-05-27 | 2012-02-22 | 电子科技大学 | Isotropic double-negative metamaterials |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101389998A (en) * | 2004-07-23 | 2009-03-18 | 加利福尼亚大学董事会 | Metamaterials |
| US20080296710A1 (en) * | 2005-09-30 | 2008-12-04 | The Government Of The Us, As Represented By The Secretary Of The Navy | Photoconductive Metamaterials with Tunable Index of Refraction |
| CN101673869A (en) * | 2009-10-10 | 2010-03-17 | 北京理工大学 | Preparation method for left-hand material composed of small ceramic ball and copper wire |
| CN202150553U (en) * | 2011-05-27 | 2012-02-22 | 电子科技大学 | Isotropic double-negative metamaterials |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102623873A (en) * | 2012-04-13 | 2012-08-01 | 电子科技大学 | Implement method for producing high power radiation based on double negative materials |
| CN102623873B (en) * | 2012-04-13 | 2014-09-24 | 电子科技大学 | Implement method for producing high power radiation based on double negative materials |
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Application publication date: 20111214 |