CN102280533A - Method for preparing gallium nitride substrate material - Google Patents
Method for preparing gallium nitride substrate material Download PDFInfo
- Publication number
- CN102280533A CN102280533A CN201110171023A CN201110171023A CN102280533A CN 102280533 A CN102280533 A CN 102280533A CN 201110171023 A CN201110171023 A CN 201110171023A CN 201110171023 A CN201110171023 A CN 201110171023A CN 102280533 A CN102280533 A CN 102280533A
- Authority
- CN
- China
- Prior art keywords
- gallium nitride
- substrate
- backing material
- resilient coating
- material manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention discloses a method for preparing gallium nitride substrate material, comprising providing a substrate; forming a patterned mask layer on the substrate and etching the substrate with the pattern mask layer as the mask, thus forming multiple grooves on the surface of the substrate; forming a buffer layer which covers the surface with grooves of the substrate, such that the cavities are formed in the buffer layer in the grooves; forming a gallium nitride layer on the butter layer; and removing the substrate and the buffer layer. Because of the existence of the cavities, the dislocation density of the gallium nitride layer is decreased, and the stress of the gallium nitride layer is released, thus forming a gallium nitride layer with less defects.
Description
Technical field
The present invention relates to the semiconductor light emitting field, particularly relate to a kind of gallium nitride backing material manufacture method.
Background technology
Light-emitting diode is applied to various fields owing to have long, low power consumption and other advantages of life-span, and especially along with its illumination performance index day by day significantly improves, light-emitting diode is commonly used for light-emitting device at lighting field.Wherein, be the III-V compound semiconductor of representative with gallium nitride (GaN) because have that band gap is wide, luminous efficiency is high, characteristics such as electronics saturation drift velocity height, chemical property are stable, in the high-luminance light field of electronic devices huge application potential is arranged, caused people's extensive concern.
See also Fig. 1, Fig. 1 is a kind of cross-sectional view of light-emitting diode of prior art.Described light-emitting diode comprises substrate 11, resilient coating (buffer layer) 12, N type contact layer (N contact layer) 13, N type cover layer (N active layer) 14, active layer (light emitting layers) 15, P type cover layer (P active layer) 16, P type contact layer (P contact layer) 17, the positive electrode 18 that is connected with described P type contact layer 17 and the negative electrode 19 that is connected with described N type contact layer 13.Described light-emitting diode is that two heterogeneous (wherein double-heterostructure comprises for Double Heterogeneous, the DH) light-emitting diode of structure: N type cover layer 14, active layer 15 and P type cover layer 16.Described active layer 15 is the luminescent layer of described light-emitting diode.Described N type cover layer 14 is a N type doped gallium nitride layer, and described P type cover layer 16 is a P type doped gallium nitride layer.Similarly, U.S. Pat 5777350 has also been announced a kind of nitride semiconductor photogenerator.
Yet, because gallium nitride body monocrystalline is difficult to acquisition, so the growth of gallium nitride material is at present mainly passed through at sapphire (Sapphire, Al
2O
3) means of carrying out heteroepitaxy on the substrate obtain, topmost growth technology has metal oxide chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) and halide vapour phase epitaxy (HVPE) etc.But, because Sapphire Substrate and epitaxial layer of gallium nitride exist very big lattice mismatch (lattice mismatch) and heat expansion mismatch, so can in epitaxial layer of gallium nitride, introduce a large amount of dislocation (dislocation) inevitably, reduce the internal quantum efficiency of device.
Therefore, be necessary to provide a kind of gallium nitride backing material manufacture method, to form high-quality gallium nitride backing material.
Summary of the invention
The invention provides a kind of gallium nitride backing material manufacture method, to form few, the high-quality gallium nitride backing material of defective.
For solving the problems of the technologies described above, the invention provides a kind of gallium nitride backing material manufacture method, comprising: a substrate is provided; Form patterned mask layer on described substrate, and be mask with described patterned mask layer, the described substrate of etching makes described substrate surface form a plurality of grooves; Form resilient coating, described resilient coating covers the surface that described substrate has groove one side, makes to be formed with the cavity in the resilient coating in the described groove; On described resilient coating, form gallium nitride layer; Remove described substrate and resilient coating.
Optionally, in described gallium nitride backing material manufacture method, the depth-width ratio of described groove was more than or equal to 1.2: 1.The height of described groove is 1～3 μ m, and the width of described groove is 1～2 μ m, and the length of described groove is 1～10 μ m.The density of described groove is more than or equal to 10
8/ cm
2
Optionally, in described gallium nitride backing material manufacture method, the material of described substrate is sapphire, carborundum, silicon, zinc oxide, GaAs or spinelle.
Optionally, in described gallium nitride backing material manufacture method, the described substrate of etching forms in the step of groove, etching gas is the mixture of boron chloride and chlorine, chamber pressure is 10～30 millitorrs, and backplane power is 200～400 watts, and coil power is 100～200 watts.
Optionally, in described gallium nitride backing material manufacture method, utilize the mode of metallo-organic compound chemical vapour deposition (CVD) on described resilient coating, to form gallium nitride layer.
Optionally, in described gallium nitride backing material manufacture method, the temperature of described metallo-organic compound chemical vapor deposition method is 800～1400 ℃, and chamber pressure is 400～760torr.
Optionally, in described gallium nitride backing material manufacture method, the thickness of gallium nitride layer is 100 μ m～10cm.
Optionally, in described gallium nitride backing material manufacture method, the step of removing described substrate and resilient coating comprises: utilize the mode of laser lift-off or wet etching to remove substrate and partial buffer layer; And utilize the mode of grinding to remove remaining resilient coating.
Compared with prior art, the present invention is formed with a plurality of grooves at a side surface of the described resilient coating of substrate proximity, when on described substrate, forming resilient coating, make and be formed with the cavity in the resilient coating in the described groove, dislocation in the gallium nitride layer of follow-up formation is absorbed (dislocation trapping), thereby reduced the dislocation density (dislocation density) of gallium nitride layer, discharged the stress in the gallium nitride layer, can form less, the high-quality gallium nitride layer of defective thus.
Description of drawings
Fig. 1 is a kind of cross-sectional view of light-emitting diode of prior art.
Fig. 2 is the flow chart of gallium nitride backing material manufacture method of the present invention.
Fig. 3 is each step schematic diagram of gallium nitride backing material manufacture method of the present invention to Fig. 8.
Fig. 9 is the vertical view of groove of the present invention.
Figure 10 is the enlarged diagram that gallium nitride backing material manufacture method of the present invention forms empty step.
Embodiment
Core concept of the present invention is, a kind of gallium nitride backing material manufacture method is provided, form a plurality of grooves by a side surface at the described resilient coating of substrate proximity, when on described substrate, forming resilient coating, can make to be formed with the cavity in the resilient coating in the described groove, because the existence in described cavity, dislocation in the gallium nitride layer of follow-up formation is absorbed, thereby reduced the dislocation density of gallium nitride layer, discharged the stress in the gallium nitride layer, can form the less gallium nitride layer of defective thus.
See also Fig. 2, it is the flow chart of gallium nitride backing material manufacture method of the present invention.Described gallium nitride backing material manufacture method may further comprise the steps:
Step S10 a: substrate is provided;
Step S20: form patterned mask layer on described substrate, and be mask with described patterned mask layer, the described substrate of etching makes described substrate surface form a plurality of grooves;
Step S30: form resilient coating, described resilient coating covers the surface that described substrate has groove one side, makes to be formed with the cavity in the resilient coating in the described groove;
Step S40: on described resilient coating, form gallium nitride layer;
Step S50: remove described substrate and resilient coating.
To Fig. 8, describe gallium nitride backing material manufacture method of the present invention below in conjunction with Fig. 3 in detail.
As shown in Figure 3, at first, provide a substrate 100.The material of described substrate 100 can be sapphire, carborundum (SiC), silicon, zinc oxide (ZnO), GaAs (GaAs), spinelle (MgAL
2O
4), and lattice constant is near the monocrystalline nitride of nitride-based semiconductor.Preferably, described substrate is Sapphire Substrate or silicon substrate.
As shown in Figure 4, then, form patterned mask layer 100a on described substrate 100, described patterned mask layer 100a for example is patterned photoresist layer, can utilize the graphical photoresist layer formation of prior art such as exposure imaging, does not repeat them here.
As shown in Figure 5, then, be mask with described patterned mask layer 100a, the described substrate 100 of etching forms a plurality of grooves 101 on the surface of described substrate 100.In etching process, etching gas for example is boron chloride (BCl
3) and chlorine (Cl
2) mixture, Cl
2Flow be 10～100sccm, BCl
3Flow be 5～50sccm, chamber pressure is 10 to 30 millitorrs, backplane power is 200 to 400 watts, coil power is 100 to 200 watts.Certainly, above-mentioned numerical value is preferred embodiment of the present invention only, and is not used in qualification the present invention.
Preferably, as Fig. 5 and shown in Figure 9, the depth-width ratio of described groove 101 was more than or equal to 1.2: 1, and the height H of described groove 101 is 1～3 μ m, and the width W of described groove 101 is 1～2 μ m, and the length L of described groove 101 is 1～10 μ m.The density of described groove 101 is more than or equal to 10
8/ cm
2, can be formed with a cavity 111 in each groove 101, corresponding, the density in cavity 111 is also more than or equal to 10
8/ em
2, the density of the linear dislocation of epitaxial loayer can be reduced to 10 at least
7/ em
2Below.
As shown in Figure 6, on described substrate 100, form after the groove 101, a side surface that has groove 101 at described substrate 100 forms resilient coating 110, and described resilient coating 110 can adopt the manufacture method of prior art to form, and forms as the method that adopts the metallo-organic compound chemical vapour deposition (CVD).When described substrate 100 is Sapphire Substrate, the gallium nitride layer that described resilient coating 110 is grown down for cryogenic conditions; When described substrate 100 was silicon substrate, described resilient coating 110 was an aln layer.In conjunction with shown in Figure 10, because due to the characteristic of depositing operation, in the process that forms described resilient coating 110, (the relatively easy covering gone up resilient coating near the recess sidewall) can't complete filling be arrived in the groove center, progressively deposition along with resilient coating, wherein be formed centrally the cavity and tend towards stability gradually in the top, level and smooth and the center has the resilient coating in cavity until the final top that formed.Preferably, the thickness T of the resilient coating above the described substrate is 2～5 μ m.
As shown in Figure 7, form after the described resilient coating 110, on described resilient coating 110, form gallium nitride layer 120.Because described empty 111 existence, the linear dislocation of epitaxial loayer is terminated in these cavities, dislocation in the gallium nitride layer 120 is absorbed (dislocation trapping), thereby reduced the dislocation density (dislocation density) of gallium nitride layer 120, discharge the stress in the gallium nitride layer 120, can form the less gallium nitride layer of defective thus.
In the present embodiment, can utilize the mode of metallo-organic compound chemical vapour deposition (CVD) (MOCVD) on resilient coating 110, to form gallium nitride layer 120.Wherein, described MOCVD technology can adopt higher temperature and lower chamber pressure, with the deposition rate of quickening MOCVD technology, and then enhances productivity.For example, the temperature of described MOCVD technology is 800～1400 ℃, and chamber pressure is 400～760torr, and deposition rate can be greater than 10 μ m/hour.Preferably, the thickness of described gallium nitride layer 120 is 100 μ m～10cm.
As shown in Figure 8, after on described resilient coating 110, forming gallium nitride layer 120, can directly remove described substrate 100 and resilient coating 110, and only keep few, the high-quality gallium nitride layer 120 of defective.Described gallium nitride layer 120 can be used as backing material, is used to make devices such as light-emitting diode.
In the present embodiment, removing step can carry out in two steps: at first, can utilize the mode of laser lift-off (laser lift-off) or wet etching to remove substrate 100 and partial buffer layer, described laser lift-off focuses on a certain interface, utilize high temperature that the material of focusing place is melted, thereby substrate and partial buffer layer are peeled off, and the etching liquid that described wet-etching technology adopts is sulfuric acid and phosphoric acid mixed liquor; Then, can utilize the mode of grinding to remove remaining resilient coating, thereby only keep few, the high-quality gallium nitride layer of defective.
Compare with the method for prior art, the present invention forms a plurality of grooves by the side surface at the described resilient coating of substrate proximity, when on described substrate, forming resilient coating, can make and be formed with the cavity in the resilient coating in the described groove, because the existence in described cavity, the linear dislocation of epitaxial loayer is terminated in these cavities, dislocation in the gallium nitride layer of follow-up formation is absorbed, thereby reduced the dislocation density of gallium nitride layer, discharge the stress in the gallium nitride layer, can form the less gallium nitride layer of defective thus.
Under situation without departing from the spirit and scope of the present invention, can also constitute many very embodiment of big difference that have.Should be appreciated that except as defined by the appended claims, the present invention is not limited at the specific embodiment described in the specification.
Claims (11)
1. a gallium nitride backing material manufacture method is characterized in that, comprising:
One substrate is provided;
Form patterned mask layer on described substrate, and be mask with described patterned mask layer, the described substrate of etching makes described substrate surface form a plurality of grooves;
Form resilient coating, described resilient coating covers the surface that described substrate has groove one side, makes to be formed with the cavity in the resilient coating in the described groove;
On described resilient coating, form gallium nitride layer;
Remove described substrate and resilient coating.
2. gallium nitride backing material manufacture method as claimed in claim 1 is characterized in that the depth-width ratio of described groove was more than or equal to 1.2: 1.
3. gallium nitride backing material manufacture method as claimed in claim 2 is characterized in that, the height of described groove is 1～3 μ m, and the width of described groove is 1～2 μ m, and the length of described groove is 1～10 μ m.
4. as any described gallium nitride backing material manufacture method in the claim 1 to 3, it is characterized in that the density of described groove is more than or equal to 10
8/ cm
2
5. gallium nitride backing material manufacture method as claimed in claim 1 is characterized in that the material of described substrate is sapphire, carborundum, silicon, zinc oxide, GaAs or spinelle.
6. as claim 1 or 5 described gallium nitride backing material manufacture methods, it is characterized in that, the described substrate of etching forms in the step of groove, etching gas is the mixture of boron chloride and chlorine, chamber pressure is 10～30 millitorrs, backplane power is 200～400 watts, and coil power is 100～200 watts.
7. gallium nitride backing material manufacture method as claimed in claim 1 is characterized in that, utilizes the mode of metallo-organic compound chemical vapour deposition (CVD) to form gallium nitride layer on described resilient coating.
8. gallium nitride backing material manufacture method as claimed in claim 7 is characterized in that the temperature of described metallo-organic compound chemical vapor deposition method is 800～1400 ℃, and chamber pressure is 400～760torr.
9. as claim 7 or 8 described gallium nitride backing material manufacture methods, it is characterized in that the thickness of described gallium nitride layer is 100 μ m～10cm.
10. gallium nitride backing material manufacture method as claimed in claim 1 is characterized in that the step of removing described substrate and resilient coating comprises:
Utilize the mode of laser lift-off or wet etching to remove substrate and partial buffer layer; And
Utilize the mode of grinding to remove remaining resilient coating.
11. gallium nitride backing material manufacture method as claimed in claim 10 is characterized in that, the etching liquid that described wet-etching technology adopts is the mixed liquor of sulfuric acid and phosphoric acid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110171023A CN102280533A (en) | 2011-06-23 | 2011-06-23 | Method for preparing gallium nitride substrate material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110171023A CN102280533A (en) | 2011-06-23 | 2011-06-23 | Method for preparing gallium nitride substrate material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102280533A true CN102280533A (en) | 2011-12-14 |
Family
ID=45105843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110171023A Pending CN102280533A (en) | 2011-06-23 | 2011-06-23 | Method for preparing gallium nitride substrate material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102280533A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103531672A (en) * | 2012-07-06 | 2014-01-22 | 隆达电子股份有限公司 | Epitaxial structure with pores and growth method thereof |
| CN104681677A (en) * | 2015-02-17 | 2015-06-03 | 吉林大学 | NiO-AlGaN ultraviolet light-emitting tube with microporous structure and preparation method thereof |
| CN109390391A (en) * | 2017-08-10 | 2019-02-26 | 新唐科技股份有限公司 | Semiconductor substrate and method for manufacturing the same |
| CN111354628A (en) * | 2020-03-20 | 2020-06-30 | 山东科恒晶体材料科技有限公司 | Method for manufacturing gallium nitride growth substrate |
| CN107978659B (en) * | 2016-10-21 | 2021-05-28 | 三星电子株式会社 | Method for manufacturing gallium nitride substrate |
| CN113690263A (en) * | 2020-05-18 | 2021-11-23 | 成都辰显光电有限公司 | Display substrate and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1104031A2 (en) * | 1999-11-15 | 2001-05-30 | Matsushita Electric Industrial Co., Ltd. | Nitride semiconductor, nitride semiconductor device, semiconductor light emiting device and method of fabricating the same |
| JP2002008985A (en) * | 2000-06-21 | 2002-01-11 | Nichia Chem Ind Ltd | Method of manufacturing nitride semiconductor, and nitride semiconductor substrate |
| JP2004056051A (en) * | 2002-07-24 | 2004-02-19 | Nichia Chem Ind Ltd | Method for manufacturing nitride semiconductor substrate |
| JP2004262755A (en) * | 2000-08-24 | 2004-09-24 | Nichia Chem Ind Ltd | Method for growing nitride semiconductor and nitride semiconductor substrate |
| CN102037545A (en) * | 2008-05-26 | 2011-04-27 | 佳能株式会社 | Nitride semiconductor layer-containing structure, nitride semiconductor layer-containing composite substrate and production methods of these |
-
2011
- 2011-06-23 CN CN201110171023A patent/CN102280533A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1104031A2 (en) * | 1999-11-15 | 2001-05-30 | Matsushita Electric Industrial Co., Ltd. | Nitride semiconductor, nitride semiconductor device, semiconductor light emiting device and method of fabricating the same |
| JP2002008985A (en) * | 2000-06-21 | 2002-01-11 | Nichia Chem Ind Ltd | Method of manufacturing nitride semiconductor, and nitride semiconductor substrate |
| JP2004262755A (en) * | 2000-08-24 | 2004-09-24 | Nichia Chem Ind Ltd | Method for growing nitride semiconductor and nitride semiconductor substrate |
| JP2004056051A (en) * | 2002-07-24 | 2004-02-19 | Nichia Chem Ind Ltd | Method for manufacturing nitride semiconductor substrate |
| CN102037545A (en) * | 2008-05-26 | 2011-04-27 | 佳能株式会社 | Nitride semiconductor layer-containing structure, nitride semiconductor layer-containing composite substrate and production methods of these |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103531672A (en) * | 2012-07-06 | 2014-01-22 | 隆达电子股份有限公司 | Epitaxial structure with pores and growth method thereof |
| US9601661B2 (en) | 2012-07-06 | 2017-03-21 | Lextar Electronics Corporation | Epitaxial structure and epitaxial growth method for forming epitaxial layer with cavities |
| CN103531672B (en) * | 2012-07-06 | 2017-04-26 | 隆达电子股份有限公司 | Epitaxial structure with pores and growth method thereof |
| US9673353B2 (en) | 2012-07-06 | 2017-06-06 | Lextar Electronics Corporation | Epitaxial structure and epitaxial growth method for forming epitaxial layer with cavities |
| US9892911B2 (en) | 2012-07-06 | 2018-02-13 | Lextar Electronics Corporation | Epitaxial structure with air voids in shape of trapezoid |
| CN104681677A (en) * | 2015-02-17 | 2015-06-03 | 吉林大学 | NiO-AlGaN ultraviolet light-emitting tube with microporous structure and preparation method thereof |
| CN107978659B (en) * | 2016-10-21 | 2021-05-28 | 三星电子株式会社 | Method for manufacturing gallium nitride substrate |
| CN109390391A (en) * | 2017-08-10 | 2019-02-26 | 新唐科技股份有限公司 | Semiconductor substrate and method for manufacturing the same |
| CN111354628A (en) * | 2020-03-20 | 2020-06-30 | 山东科恒晶体材料科技有限公司 | Method for manufacturing gallium nitride growth substrate |
| CN113690263A (en) * | 2020-05-18 | 2021-11-23 | 成都辰显光电有限公司 | Display substrate and preparation method thereof |
| CN113690263B (en) * | 2020-05-18 | 2024-02-06 | 成都辰显光电有限公司 | Display substrate and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5117596B2 (en) | Semiconductor light emitting device, wafer, and method of manufacturing nitride semiconductor crystal layer | |
| JP4509973B2 (en) | Nitride compound layer manufacturing method, nitride compound substrate manufacturing method, and vertical structure nitride semiconductor light emitting device manufacturing method | |
| TWI405257B (en) | Method for separating an epitaxial substrate from a semiconductor layer | |
| US9059012B2 (en) | Epitaxial layer wafer having void for separating growth substrate therefrom and semiconductor device fabricated using the same | |
| JP2005129896A (en) | Light emitting device | |
| CN102280533A (en) | Method for preparing gallium nitride substrate material | |
| JP2005314121A (en) | Single crystal sapphire substrate, its producing method, and semiconductor light-emitting element | |
| KR20120004159A (en) | Substrate structure and method of manufacturing the same | |
| US20160380153A1 (en) | Substrate, method of preparing the same, and light-emitting diode using the substrate | |
| CN102222738A (en) | Method for manufacturing GaN (gallium nitride) substrate material | |
| KR20100034332A (en) | Method for manufacturing of crystalline substrate, crystalline substrate manufactured thereby, light emitting device including crystalline substrate and manufacturing method thereof | |
| CN102244169A (en) | Light-emitting diode and manufacturing method thereof | |
| CN102222745A (en) | LED (Light Emitting Diode) and manufacturing method thereof | |
| US20120068196A1 (en) | Semiconductor light-emitting device and a method of manufacture thereof | |
| JP2015532012A (en) | Light emitting device comprising a molded substrate | |
| KR100773555B1 (en) | Semiconductor substrate having low defects and method of manufacturing the same | |
| CN109962134B (en) | Nitride semiconductor light-emitting diode | |
| KR101923673B1 (en) | Method of fabricating gallium nitrded based semiconductor device | |
| JP5946333B2 (en) | Group III nitride semiconductor device and manufacturing method thereof | |
| KR100834698B1 (en) | Method of forming gan layer and gan substrate manufactured using the same | |
| TW201419580A (en) | Nitride light emitting device having high luminance and method for manufacturing of the same | |
| TWI728713B (en) | Method for roughening the surface of light-emitting device and light-emitting device | |
| JP5449414B2 (en) | Semiconductor light emitting device | |
| JP5449415B2 (en) | Semiconductor light emitting device | |
| CN111066158A (en) | Method for roughening surface of light-emitting device and light-emitting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20111214 |