CN102280436B - 薄膜金属层接线结构及其制造方法和阵列基板 - Google Patents
薄膜金属层接线结构及其制造方法和阵列基板 Download PDFInfo
- Publication number
- CN102280436B CN102280436B CN201010201391.5A CN201010201391A CN102280436B CN 102280436 B CN102280436 B CN 102280436B CN 201010201391 A CN201010201391 A CN 201010201391A CN 102280436 B CN102280436 B CN 102280436B
- Authority
- CN
- China
- Prior art keywords
- metal layer
- via hole
- layer image
- thin film
- wiring structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 419
- 239000002184 metal Substances 0.000 title claims abstract description 419
- 239000010409 thin film Substances 0.000 title claims abstract description 89
- 239000000758 substrate Substances 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000009422 external insulation Methods 0.000 claims description 71
- 238000000034 method Methods 0.000 claims description 41
- 230000004888 barrier function Effects 0.000 claims description 33
- 230000001360 synchronised effect Effects 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 2
- 238000013021 overheating Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 238000012423 maintenance Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- 238000004026 adhesive bonding Methods 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 229910000809 Alumel Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910001182 Mo alloy Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910001080 W alloy Inorganic materials 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (11)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010201391.5A CN102280436B (zh) | 2010-06-09 | 2010-06-09 | 薄膜金属层接线结构及其制造方法和阵列基板 |
US13/150,406 US8368081B2 (en) | 2010-06-09 | 2011-06-01 | Metal thin film connection structure, manufacturing method thereof and array substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010201391.5A CN102280436B (zh) | 2010-06-09 | 2010-06-09 | 薄膜金属层接线结构及其制造方法和阵列基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102280436A CN102280436A (zh) | 2011-12-14 |
CN102280436B true CN102280436B (zh) | 2014-08-06 |
Family
ID=45095589
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010201391.5A Active CN102280436B (zh) | 2010-06-09 | 2010-06-09 | 薄膜金属层接线结构及其制造方法和阵列基板 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8368081B2 (zh) |
CN (1) | CN102280436B (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8649820B2 (en) | 2011-11-07 | 2014-02-11 | Blackberry Limited | Universal integrated circuit card apparatus and related methods |
US8936199B2 (en) | 2012-04-13 | 2015-01-20 | Blackberry Limited | UICC apparatus and related methods |
USD703208S1 (en) | 2012-04-13 | 2014-04-22 | Blackberry Limited | UICC apparatus |
USD701864S1 (en) | 2012-04-23 | 2014-04-01 | Blackberry Limited | UICC apparatus |
USD776070S1 (en) | 2014-03-18 | 2017-01-10 | Sony Corporation | Non-contact type data carrier |
CN104678671B (zh) * | 2015-03-30 | 2018-12-21 | 京东方科技集团股份有限公司 | 显示基板及其制造方法和显示装置 |
CN104749846B (zh) | 2015-04-17 | 2017-06-30 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示面板 |
CN105097834B (zh) * | 2015-07-06 | 2017-10-17 | 合肥京东方光电科技有限公司 | 一种阵列基板及其制造方法、显示装置 |
CN105261621B (zh) * | 2015-09-06 | 2018-01-30 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
CN107910333A (zh) * | 2017-10-27 | 2018-04-13 | 武汉华星光电半导体显示技术有限公司 | 阵列基板及显示装置 |
CN110112143B (zh) * | 2019-04-29 | 2024-02-27 | 福建华佳彩有限公司 | 一种高分辨率amoled显示结构及其制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1507009A (zh) * | 2002-12-09 | 2004-06-23 | Lg.������Lcd����˾ | 具有薄膜晶体管上滤色器结构的阵列基板及其制造方法 |
CN1773357A (zh) * | 2004-11-08 | 2006-05-17 | 三星电子株式会社 | 改善了与测试线的连接的薄膜晶体管阵列面板 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6836301B1 (en) * | 1999-06-15 | 2004-12-28 | Advanced Display Inc. | Liquid crystal display device |
US20080204618A1 (en) * | 2007-02-22 | 2008-08-28 | Min-Kyung Jung | Display substrate, method for manufacturing the same, and display apparatus having the same |
-
2010
- 2010-06-09 CN CN201010201391.5A patent/CN102280436B/zh active Active
-
2011
- 2011-06-01 US US13/150,406 patent/US8368081B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1507009A (zh) * | 2002-12-09 | 2004-06-23 | Lg.������Lcd����˾ | 具有薄膜晶体管上滤色器结构的阵列基板及其制造方法 |
CN1773357A (zh) * | 2004-11-08 | 2006-05-17 | 三星电子株式会社 | 改善了与测试线的连接的薄膜晶体管阵列面板 |
Also Published As
Publication number | Publication date |
---|---|
US20110304060A1 (en) | 2011-12-15 |
US8368081B2 (en) | 2013-02-05 |
CN102280436A (zh) | 2011-12-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102280436B (zh) | 薄膜金属层接线结构及其制造方法和阵列基板 | |
JP5330603B2 (ja) | 薄膜トランジスタ基板及びそれを備えた液晶表示装置 | |
US9201095B2 (en) | Structure of bridging electrode | |
KR102081599B1 (ko) | 액정표시장치용 어레이 기판 및 그 제조방법 | |
CN103151304B (zh) | 显示面板的阵列基板及其制作方法 | |
US7417693B2 (en) | Liquid crystal display device and its manufacturing method | |
CN104915052A (zh) | 触控显示装置及其制备方法、电子设备 | |
KR20060114744A (ko) | 박막 트랜지스터 기판 및 이를 포함하는 액정 표시 장치 | |
JP5685565B2 (ja) | 薄膜トランジスタ及びその製造方法 | |
CN104201152A (zh) | 制作显示面板的方法 | |
CN102645801B (zh) | 薄膜晶体管阵列基板、彩膜基板、制作方法和显示设备 | |
CN102566165B (zh) | 阵列基板及其制造方法和液晶显示器 | |
CN106876260B (zh) | 一种闸电极结构及其制造方法和显示装置 | |
KR20100005457A (ko) | 박막 트랜지스터 표시판 및 이의 제조 방법 | |
KR20110114906A (ko) | 표시기판 및 그 제조방법 | |
WO2014176876A1 (zh) | 显示面板及其制作方法、液晶显示器 | |
CN107170757B (zh) | 一种阵列基板及其制作方法 | |
JPH11326952A (ja) | 薄膜トランジスタアレイ | |
CN101211929A (zh) | 薄膜晶体管基板及其制造方法 | |
US7982837B2 (en) | Liquid crystal display device and its manufacturing method | |
CN101494226B (zh) | 薄膜晶体管基板及其制造方法、布线结构及其制造方法 | |
WO2015149464A1 (zh) | 一种阵列基板及其制造方法、液晶显示屏 | |
JP6196387B2 (ja) | アクティブマトリクス基板 | |
CN109411518B (zh) | 一种有机发光二极管显示器及其制作方法 | |
CN218769533U (zh) | 一种低残余应力的氧化物薄膜晶体管阵列基板 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY Effective date: 20141205 Owner name: JINGDONGFANG SCIENCE AND TECHNOLOGY GROUP CO., LTD Free format text: FORMER OWNER: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY CO., LTD. Effective date: 20141205 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100176 DAXING, BEIJING TO: 100015 CHAOYANG, BEIJING |
|
TR01 | Transfer of patent right |
Effective date of registration: 20141205 Address after: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee after: BOE Technology Group Co., Ltd. Patentee after: Beijing BOE Photoelectricity Science & Technology Co., Ltd. Address before: 100176 Beijing economic and Technological Development Zone, West Central Road, No. 8 Patentee before: Beijing BOE Photoelectricity Science & Technology Co., Ltd. |