CN102260860A - Growth process for silicon nitride in silicon oxide nitride oxide silicon (SONOS) structure - Google Patents
Growth process for silicon nitride in silicon oxide nitride oxide silicon (SONOS) structure Download PDFInfo
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- CN102260860A CN102260860A CN2011102173181A CN201110217318A CN102260860A CN 102260860 A CN102260860 A CN 102260860A CN 2011102173181 A CN2011102173181 A CN 2011102173181A CN 201110217318 A CN201110217318 A CN 201110217318A CN 102260860 A CN102260860 A CN 102260860A
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- silicon nitride
- boiler tube
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- silicon
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Abstract
The invention relates to a growth process for silicon nitride in a silicon oxide nitride oxide silicon (SONOS) structure. The growth process comprises the following steps of: a, providing a wafer, and putting the wafer into a low pressure chemical vapor deposition (LPCVD) furnace pipe; b, introducing reactant gas SiCl2H2 and NH3 into the LPCVD furnace pipe to grow an initial membrane layer on the wafer; c, introducing the reactant gas such as SiCl2H2 and NH3 into the LPCVD furnace pipe in a volume ratio of 1:10, and growing an intermediate membrane layer on the initial membrane layer of the wafer; d, while keeping that the volume ratio of the SiCl2H2 to the NH3 in the LPCVD furnace pipe is 1:10, growing a top membrane layer on the intermediate membrane layer of the wafer; and e, continuing to introduce the NH3 into the LPCVD furnace pipe, and stopping introducing the SiCl2H2, so that the SiCl2H2 in the LPCVD furnace pipe reacts fully to form the required silicon nitride layer on the wafer. In the growth process, a process for manufacturing conventional devices is compatible with a metal oxide semiconductor (MOS) process; the process is simple, once the flow of the DCS and the NH3 is set, and the growth time is set, the grown silicon nitride layer is stable and controllable; and thus, the process can be used for preparing the silicon nitride layer with the SONOS structure.
Description
Technical field
The present invention relates to a kind of silicon nitride growth technique, the growth technique of silicon nitride in especially a kind of SONOS structure.
Background technology
Along with the development of microelectronics, storer is used widely.Along with continuing to increase of store content, the structure of storer is constantly being upgraded.Present jumbo storer adopts SONOS structure, i.e. Si-SiO
2-silicon nitride-SiO
2-Si structure, the silicon nitride layer that is characterized in the middle layer is as main storage media, and electronics is stored in the silicon nitride layer.The advantage of SONOS structure memory is that storage speed and capacity are greater than traditional floating boom ONO(zone of oxidation-silicon nitride layer-zone of oxidation) structure.For the making of SONOS structure, growth pattern of each layer and thickness all can directly influence and determine the performance of storer, how to optimize and select the processing condition of each layer, are the keys of making the SONOS storer.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, the growth technique of silicon nitride in a kind of SONOS structure is provided, its processing step is simple and convenient, can with MOS technical process compatibility, good reliability.
According to technical scheme provided by the invention, the growth technique of silicon nitride in a kind of SONOS structure, the growth technique of described silicon nitride comprises the steps:
A, provide the disk that needs grown silicon nitride layer, and described disk is put into the LPCVD boiler tube;
B, in the LPCVD boiler tube, feed reactant gases SiCl
2H
2With NH
3, with the initial rete of growth on disk; Reactant gases SiCl
2H
2With NH
3Volume ratio is 1:1, and the temperature in the LPCVD boiler tube is 730 ℃ ~ 790 ℃,
C, in the LPCVD boiler tube, feed reactant gases SiCl
2H
2, and in the LPCVD boiler tube, feed NH in flow linear increment mode
3, make LPCVD boiler tube reaction gases SiCl
2H
2With NH
3Volume ratio is 1:10, rete in the middle of the growth on the initial rete of disk;
D, maintenance LPCVD boiler tube reaction gases SiCl
2H
2With NH
3Volume ratio is 1:10, growth top layer rete on the middle rete of above-mentioned disk;
E, in the LPCVD boiler tube, continue to feed NH
3Gas, and stop to feeding SiCl
2H
2, make the SiCl in the LPCVD boiler tube
2H
2Fully reaction obtains silicon nitride layer required on the disk.
The thickness of described silicon nitride layer is 10 ~ 20nm.
Among the described step b, in the LPCVD boiler tube, feed NH
3Flow be 10 ~ 30sccm.
The material of described disk comprises silicon.
Advantage of the present invention: adopt industry LPCVD equipment commonly used just can finish the silicon nitride layer growth; Adopt the technical process in the element manufacturing commonly used, complete and MOS technical process compatibility; Technology is simple, in case DCS and NH
3Flow set, growth time is set, the grown silicon nitride layer stable and controllable can be used for preparing the silicon nitride layer of SONOS structure.
Embodiment
The invention will be further described below in conjunction with specific embodiment.
Be used for storer manufacturing and adopt a kind of technology of the middle silicon nitride layer growth of SONOS structure, realize by following processing step:
A, provide the disk that needs grown silicon nitride layer, and described disk put into the LPCVD(low-pressure chemical vapor phase deposition) boiler tube; The material of disk comprises silicon;
In the LPCVD reaction gases is DCS(SiCl
2H
2) and NH
3, the technology growth temperature is 760+/-30 ℃;
The foundation of b, initial atmosphere: the mode with linear increment in the LPCVD boiler tube feeds a certain amount of NH in the short period of time (in 1 minute)
3And stable, the mode with linear increment feeds a certain amount of DCS in the short period of time (in 1 minute) again, by preestablishing of flow, makes the volume ratio of two kinds of reactant gasess reach 1:1; Why feed NH earlier
3, be in order to make NH
3Excessive, allow DCS fully react in order to avoid generate other reactant; Particularly, feed NH
3Flow be 10 ~ 30sccm, sccm is meant the gas volume (milliliter/square centimeter) that flows through unit surface under the normal atmosphere; According to the NH that feeds
3Gas flow and time, can access the flow and the time of corresponding DCS gas; At DCS and NH
3Volume ratio is under the ratio of 1:1, the initial rete of growing in the clock time at 1 ~ 3 minute; Temperature in the LPCVD boiler tube is 730 ℃ ~ 790 ℃;
C, intermediate coat layer growth: keep the flow of DCS constant, with DCS:NH
3The ratio of=1:10 is set NH
3Flow, (3 ~ 10 minutes) feed NH in the mode of linear increment in the LPCVD boiler tube in the regular hour
3Thereby, rete in the middle of the growth on above-mentioned initial rete; In this process, reactant gases DCS and NH
3Between volume ratio from 1:1 to the 1:10 linear increment;
D, top layer film layer growth: keep DCS gas and NH in the above-mentioned feeding LPCVD boiler tube
3Gas flow promptly keeps DCS:NH
3Under=1:10 the volume ratio, (1 ~ 3 minute) top layer rete of on middle rete, growing within a certain period of time;
E, growth ending stage: keep gas NH in the above-mentioned feeding LPCVD boiler tube
3Flow is constant, closes DCS(and promptly stop to feed DCS gas in the LPCVD boiler tube), the short period of time is waited for (in 2 minutes), allows the interior residue of LPCVD boiler tube DCS fully react final plant closure NH
3Thereby obtain silicon nitride layer on disk, the described silicon nitride layer thickness that obtains is 10 ~ 20nm.
Processing step of the present invention is simple, and conventional equipment and the technology of all adopting in steps is simple to operate.In case DCS and NH
3Flow set, growth time is set, the grown silicon nitride layer stable and controllable can be used for preparing the silicon nitride layer of SONOS structure.
Claims (4)
1. the growth technique of silicon nitride in the SONOS structure is characterized in that the growth technique of described silicon nitride comprises the steps:
(a), the disk that needs grown silicon nitride layer is provided, and described disk is put into the LPCVD boiler tube;
(b), in the LPCVD boiler tube, feed reactant gases SiCl
2H
2With NH
3, with the initial rete of growth on disk; Reactant gases SiCl
2H
2With NH
3Volume ratio is 1:1, and the temperature in the LPCVD boiler tube is 730 ℃ ~ 790 ℃,
(c), in the LPCVD boiler tube, feed reactant gases SiCl
2H
2, and in the LPCVD boiler tube, feed NH in flow linear increment mode
3, make LPCVD boiler tube reaction gases SiCl
2H
2With NH
3Volume ratio is 1:10, rete in the middle of the growth on the initial rete of disk;
(d), keep LPCVD boiler tube reaction gases SiCl
2H
2With NH
3Volume ratio is 1:10, growth top layer rete on the middle rete of above-mentioned disk;
(e), in the LPCVD boiler tube, continue to feed NH
3Gas, and stop to feeding SiCl
2H
2, make the SiCl in the LPCVD boiler tube
2H
2Fully reaction obtains silicon nitride layer required on the disk.
2. the growth technique of silicon nitride in the SONOS structure according to claim 1 is characterized in that: the thickness of described silicon nitride layer is 10 ~ 20nm.
3. the growth technique of silicon nitride in the SONOS structure according to claim 1 is characterized in that: in the described step (b), feed NH in the LPCVD boiler tube
3Flow be 10 ~ 30sccm.
4. the growth technique of silicon nitride in the SONOS structure according to claim 1, it is characterized in that: the material of described disk comprises silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110217318 CN102260860B (en) | 2011-08-01 | 2011-08-01 | Growth process for silicon nitride in silicon oxide nitride oxide silicon (SONOS) structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110217318 CN102260860B (en) | 2011-08-01 | 2011-08-01 | Growth process for silicon nitride in silicon oxide nitride oxide silicon (SONOS) structure |
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| Publication Number | Publication Date |
|---|---|
| CN102260860A true CN102260860A (en) | 2011-11-30 |
| CN102260860B CN102260860B (en) | 2013-04-24 |
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|---|---|---|---|
| CN 201110217318 Active CN102260860B (en) | 2011-08-01 | 2011-08-01 | Growth process for silicon nitride in silicon oxide nitride oxide silicon (SONOS) structure |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102618842A (en) * | 2012-03-31 | 2012-08-01 | 上海宏力半导体制造有限公司 | Forming method of silicon nitride film |
| CN104404476A (en) * | 2014-12-10 | 2015-03-11 | 中国电子科技集团公司第四十七研究所 | Preparation method of Si3N4 (silicon nitride) film through low-pressure vapor phase deposition |
| CN106894000A (en) * | 2015-12-18 | 2017-06-27 | 中芯国际集成电路制造(上海)有限公司 | The means of defence of quartz ampoule |
| CN108695139A (en) * | 2017-04-03 | 2018-10-23 | 住友电气工业株式会社 | The deposited silicon nitride on nitride-based semiconductor(SiN)The method of film |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4395438A (en) * | 1980-09-08 | 1983-07-26 | Amdahl Corporation | Low pressure chemical vapor deposition of silicon nitride films |
| CN1389589A (en) * | 2001-06-06 | 2003-01-08 | 中国科学院电子学研究所 | Deposition process of low-stress superthick nitride and silicide film |
| US6946349B1 (en) * | 2004-08-09 | 2005-09-20 | Chartered Semiconductor Manufacturing Ltd. | Method for integrating a SONOS gate oxide transistor into a logic/analog integrated circuit having several gate oxide thicknesses |
| CN102021531A (en) * | 2009-09-09 | 2011-04-20 | 北大方正集团有限公司 | Device and method for generating silicon nitride film |
-
2011
- 2011-08-01 CN CN 201110217318 patent/CN102260860B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4395438A (en) * | 1980-09-08 | 1983-07-26 | Amdahl Corporation | Low pressure chemical vapor deposition of silicon nitride films |
| CN1389589A (en) * | 2001-06-06 | 2003-01-08 | 中国科学院电子学研究所 | Deposition process of low-stress superthick nitride and silicide film |
| US6946349B1 (en) * | 2004-08-09 | 2005-09-20 | Chartered Semiconductor Manufacturing Ltd. | Method for integrating a SONOS gate oxide transistor into a logic/analog integrated circuit having several gate oxide thicknesses |
| CN102021531A (en) * | 2009-09-09 | 2011-04-20 | 北大方正集团有限公司 | Device and method for generating silicon nitride film |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102618842A (en) * | 2012-03-31 | 2012-08-01 | 上海宏力半导体制造有限公司 | Forming method of silicon nitride film |
| CN104404476A (en) * | 2014-12-10 | 2015-03-11 | 中国电子科技集团公司第四十七研究所 | Preparation method of Si3N4 (silicon nitride) film through low-pressure vapor phase deposition |
| CN106894000A (en) * | 2015-12-18 | 2017-06-27 | 中芯国际集成电路制造(上海)有限公司 | The means of defence of quartz ampoule |
| CN108695139A (en) * | 2017-04-03 | 2018-10-23 | 住友电气工业株式会社 | The deposited silicon nitride on nitride-based semiconductor(SiN)The method of film |
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| Publication number | Publication date |
|---|---|
| CN102260860B (en) | 2013-04-24 |
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