CN102021531A - Device and method for generating silicon nitride film - Google Patents
Device and method for generating silicon nitride film Download PDFInfo
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- CN102021531A CN102021531A CN2009100928512A CN200910092851A CN102021531A CN 102021531 A CN102021531 A CN 102021531A CN 2009100928512 A CN2009100928512 A CN 2009100928512A CN 200910092851 A CN200910092851 A CN 200910092851A CN 102021531 A CN102021531 A CN 102021531A
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Abstract
The invention discloses a device and a method for generating a silicon nitride film. The device comprises a first pipeline for introducing dichlorosilane (DCS), a second pipeline for introducing ammonia (NH3), a third pipeline communicated with the first pipeline, and a low-pressure chemical vapor deposition (LPCVD) reaction cavity, wherein the first pipeline and the second pipeline are respectively connected with the LPCVD reaction cavity; and the third pipeline is used for introducing a first gas capable of discharging the residual DCS gas in the first pipeline to the LPCVD reaction cavity into the first pipeline after the DCS gas is stopped to be introduced into the LPCVD reaction cavity. The device and the method for generating the silicon nitride film can timely discharge the residual DCS gas in the first pipeline after the LPCVD reaction is ended, avoid the problem that the residual DCS gas in the first pipeline is condensed to enter the LPCVD reaction cavity to form granules attached to the surface of a wafer, and guarantee the quality of the generated silicon nitride film on the surface of the wafer.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of generating apparatus and method of silicon nitride film.
Background technology
Silicon nitride (Si
3N
4) film is used as dielectric materials and is widely used in field of semiconductor manufacture because it has high-k, as needing one deck ONO layer as the dielectric materials between floating gate (Floating Gate) the machine control sluice (Control Gate) in the technology of making flash memory." O " among the ONO represents the SiO2 film, and " N " among the ONO then represents Si
3N
4Film.
In addition, silicon nitride film is difficult for being permeated by oxygen molecule, utilizes this advantage; it as cover curtain layer (Masking Layer); can when field oxide is made, prevent that the active area (Active Area) of wafer surface is oxidated, thereby play the effect of this active area of protection.
Silicon nitride film is at present in the industry cycle mostly with the production of LPCVD (low-pressure chemical vapor deposition) method, with dichloro-dihydro silicon (DCS) and ammonia (NH
3) between reaction produce this film.
The industry low-pressure chemical vapor deposition (Low Pressure Chemical Vapor Deposition, it is very ripe that LPCVD) method is produced silicon nitride, can be used in a large number producing, and its chemical equation is specific as follows:
3SiH
2Cl
2+7NH
3→Si
3N
4+3NH
4Cl+3HCl+6H
2
Using the LPCVD method to produce in the process of silicon nitride at present, because the condensation point of DCS is lower, meet cold i.e. liquefaction, liquefy in gas piping for fear of it, usually wrap the heating zone in the pipeline outside, pipeline is incubated, make the DCS of pipeline inside keep gaseous state, in the process of producing silicon nitride film, if heats is bad or gas piping design is unreasonable, can cause in process of production that DCS is easy to condensation, when the DCS of condensation delivers to reaction chamber (boiler tube) in pipeline, because decompose too fastly, have little time and NH
3Fully reaction sticks to crystal column surface thereby form particulate material, the quality of the silicon nitride film that influence generates.
Summary of the invention
The embodiment of the invention provides a kind of generating apparatus and method of silicon nitride film, in order to the easy condensation of dichloro-dihydro silicon in the process that solves existing production silicon nitride film, forms particulate material in boiler tube, thus the problem of the silicon nitride film quality that influence generates.
The generating apparatus of a kind of silicon nitride film that the embodiment of the invention provides comprises: be used to feed dichloro-dihydro silicon DCS gas first pipeline, be used to feed ammonia NH
3Second pipeline and low-pressure chemical vapor deposition LPCVD reaction chamber; The described first pipeline outside surface is enclosed with the heating zone, described first pipeline links to each other with described LPCVD reaction chamber respectively with second pipeline, also comprise: the 3rd pipeline, described the 3rd pipeline and described first pipeline connection, be used for stopping after described LPCVD reaction chamber feeds DCS gas, in described first pipeline, feed first gas that DCS gas residual in described first pipeline can be expelled to described LPCVD reaction chamber.
A kind of method that generates silicon nitride film that the embodiment of the invention provides feeds dichloro-dihydro silicon DCS gas and ammonia NH by first pipeline and second pipeline respectively in low-pressure chemical vapor deposition LPCVD reaction chamber
3, described DCS gas and NH
3Chemical reaction taking place generates silicon nitride film, after stopping to feed DCS gas in described LPCVD reaction chamber, also comprises:
By with the 3rd pipeline of described first pipeline connection, in described first pipeline, feed first gas that DCS gas residual in described first pipeline can be expelled to described LPCVD reaction chamber;
DCS gas that is discharged from and described NH
3Continue reaction and generate silicon nitride film.
The beneficial effect of the embodiment of the invention comprises:
The generating apparatus of a kind of silicon nitride film that the embodiment of the invention provides and method feed DCS gas and NH respectively by first pipeline and second pipeline in the LPCVD reaction chamber
3, DCS gas and NH
3Reaction generates silicon nitride film, and finish in the LPCVD reaction, stop in first pipeline, to feed after the DCS gas, in first pipeline, feed first gas that DCS gas residual in first pipeline can be expelled to the LPCVD reaction chamber by the 3rd pipeline that is connected with first pipeline, DCS gas residual in first pipeline is in time discharged, and the NH that feeds with second pipeline
3Continue to react, generate silicon nitride film.Avoided the easy condensation of DCS gas residual in first pipeline to enter the LPCVD reaction chamber, formed the problem of particle, guaranteed the generation quality of crystal column surface silicon nitride film attached to crystal column surface.
Description of drawings
The structural representation of the generating apparatus of the silicon nitride film that Fig. 1 provides for the embodiment of the invention;
The schema of the generation method of the silicon nitride film that Fig. 2 provides for the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing, the generating apparatus of a kind of silicon nitride film provided by the invention and the embodiment of method are described in detail.
The generating apparatus of a kind of silicon nitride film that the embodiment of the invention provides comprises: be used to feed DCS gas first pipeline, be used to feed NH
3Second pipeline, the 3rd pipeline and LPCVD reaction chamber; Wherein:
The first pipeline outside surface is enclosed with the heating zone, and first pipeline links to each other with the LPCVD reaction chamber respectively with second pipeline;
The 3rd pipeline is connected with first pipeline, is used for stopping after described LPCVD reaction chamber feeds DCS gas, feeds first gas that DCS gas residual in first pipeline can be expelled to the LPCVD reaction chamber in first pipeline.
The concrete structure and the principle of work of the generating apparatus of the silicon nitride film that the embodiment of the invention provides are described with a concrete example below.
The structural representation of this specific examples as shown in Figure 1, the outside surface of first pipeline 101 is enclosed with heating zone (among Fig. 1 omit do not illustrate), plays insulation effect.Specifically be provided with on first pipeline 101: first electrovalve 1011, DCS flow director (DCS MFC) 1012 and second electrovalve 1013; Wherein:
DCS flow director 1012 is arranged between first electrovalve 1011 and second electrovalve 1013;
The DCS gas that second electrovalve 1013 is used for behind the regulating and controlling flow inputs to LPCVD reaction chamber 102.
The 3rd pipeline 103 is connected with first pipeline 101, and the connected entrance between the 3rd pipeline 103 and first pipeline 101 is between first electrovalve 1011 and DCS flow director 1012.
As shown in Figure 1, the 3rd pipeline 103 is provided with the 3rd electrovalve 1031, the three electrovalves 1031 and is used to control first gas and imports the 3rd pipeline 103.In embodiments of the present invention, first gas refers to after stopping in described LPCVD reaction chamber feeding DCS gas, DCS gas residual in first pipeline 101 can be expelled to the gas of LPCVD reaction chamber 102, and first gas can adopt not and DCS or NH
3The gas of chemical reaction takes place, and preferably adopts nitrogen (N
2) and rare gas element etc.
Second pipeline 104 is to be used for feeding NH to LPCVD reaction chamber 102
3Pipeline, second pipeline 104 is provided with: quadrielectron valve 1041, the 5th electrovalve 1043 and NH
3Flow director (NH
3MFC) 1042; Wherein:
NH
3Flow director 1042 is arranged between quadrielectron valve 1041 and the 5th electrovalve 1043;
NH
3Flow director 1042 is used for regulating second pipeline, 104 NH
3Flow;
The 5th electrovalve 1043 is used for the NH behind the regulating and controlling flow
3Input to LPCVD reaction chamber 102.
Introduce the principle of work of the generating apparatus of above-mentioned silicon nitride film below in detail.At DCS and NH
3Carry out chemical reaction and generate in the process of silicon nitride film, open first electrovalve 1011 and second electrovalve 1013 on first pipeline 101 simultaneously, and quadrielectron valve 1041 on second pipeline 104 and the 5th electrovalve 1043;
Close the 3rd electrovalve 1031 on the 3rd pipeline 103;
NH on the DCS flow director on first pipeline 101 and second pipeline 104
3Flow director adjustments of gas flow.
DCS gas enters in the LPCVD reaction chamber 102 by first pipeline 101 that the heating zone is arranged, with the NH that feeds by second pipeline 104
3Chemical reaction takes place, and generates silicon nitride film.The thickness of silicon nitride film can feed the reaction times that gas carries out chemical vapour deposition reaction by control and control.
After the time of chemical vapour deposition reaction finished, first electrovalve 1011 on first pipeline 101 was closed; And second electrovalve 1013 on first pipeline 101, quadrielectron valve 1041 on second pipeline and the 5th electrovalve 1043 also are held open state, because in the LPCVD reaction chamber 102 is vacuum, from one section pipeline of first electrovalve, 1011 to LPCVD reaction chambers 102, also has remaining DCS gas, after the DCS condensation of gas of remnants, enter 102 formation of LPCVD reaction chamber attached to the particle on the wafer, after closing first electrovalve 1011, open the 3rd electrovalve 1031 on the 3rd pipeline 103, in the 3rd pipeline 103, feed for example nitrogen, the nitrogen that feeds enters first pipeline 101 through the 3rd pipeline 103, then enter in the cavity of LPCVD reaction chamber 102, simultaneously DCS gas remaining in first pipeline 101 is discharged from first pipeline 101 in time, remaining DCS gas is discharged from and enters after the LPCVD reaction chamber 102, with the NH of second pipeline, 104 feedings
3Continue to react, so just guaranteed to no longer include the DCS gas residue in first pipeline 101.After reaction finishes, closeall electronics valve.
Based on same inventive concept, a kind of generation method of silicon nitride film also is provided in the embodiment of the invention, because this method realizes based on the generating apparatus of aforementioned silicon nitride film, the principle of being dealt with problems is similar to the principle of work of the generating apparatus of aforementioned a kind of silicon nitride film, therefore the concrete enforcement of this method can repeat part and not give unnecessary details referring to the enforcement of device.
The generation method of a kind of silicon nitride film that the embodiment of the invention provides as shown in Figure 2, comprising:
S201, in the LPCVD reaction chamber, feed DCS gas by first pipeline; In the LPCVD reaction chamber, feed NH by second pipeline
3DCS gas and NH
3Chemical reaction takes place generate silicon nitride film;
After S202, LPCVD reaction finishes, by with the 3rd pipeline of first pipeline connection, in first pipeline, feed first gas that DCS gas residual in first pipeline can be expelled to the LPCVD reaction chamber;
S203, the DCS gas and the NH that are discharged from
3Continue reaction and generate silicon nitride film.
First gas among the above-mentioned steps S202 includes but not limited to nitrogen, rare gas element or other and described DCS or NH
3The gas of chemical reaction does not take place.
Among the above-mentioned steps S201, in the LPCVD reaction chamber, feed DCS gas, comprising by first pipeline:
In first pipeline, feed DCS gas by first electrovalve on first pipeline, regulate the flow of DCS gas through the DCS flow director on first pipeline after, the DCS gas that will regulate behind the flow by second electrovalve inputs to the LPCVD reaction chamber.
Among the above-mentioned steps S201, in the LPCVD reaction chamber, feed NH by second pipeline
3, specifically comprise:
In second pipeline, feed NH by the quadrielectron valve on second pipeline
3, the NH on second pipeline
3Flow director is regulated NH
3Flow after, will regulate NH behind the flow by the 5th electrovalve
3Input to the LPCVD reaction chamber.
Among the above-mentioned steps S203, after stopping in the LPCVD reaction chamber feeding DCS gas, by with the 3rd pipeline of first pipeline connection, in first pipeline, feed described first gas, specifically comprise:
Close first electrovalve on first pipeline, open second electrovalve on first pipeline and the 3rd electrovalve on the 3rd pipeline, first gas is passed in first pipeline through the connected entrance between the 3rd pipeline and first pipeline.
The generating apparatus of a kind of silicon nitride film that the embodiment of the invention provides and method feed DCS gas and NH respectively by first pipeline and second pipeline in the LPCVD reaction chamber
3, DCS gas and NH
3Chemical reaction takes place generate silicon nitride film, and finish in the LPCVD reaction process, stop in first pipeline, to feed after the DCS gas, in first pipeline, feed first gas that DCS gas residual in first pipeline can be expelled to the LPCVD reaction chamber by the 3rd pipeline that is connected with first pipeline, DCS gas residual in first pipeline is in time discharged, and the NH that feeds with second pipeline
3Continue to react, generate silicon nitride film.Avoided the easy condensation of DCS gas residual in first pipeline to enter the LPCVD reaction chamber, formed the problem of particle, guaranteed the generation quality of crystal column surface silicon nitride film attached to crystal column surface.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (9)
1. the generating apparatus of a silicon nitride film comprises: be used to feed dichloro-dihydro silicon DCS gas first pipeline, be used to feed ammonia NH
3Second pipeline and low-pressure chemical vapor deposition LPCVD reaction chamber; The described first pipeline outside surface is enclosed with the heating zone, described first pipeline links to each other with described LPCVD reaction chamber respectively with second pipeline, it is characterized in that, also comprise: the 3rd pipeline, described the 3rd pipeline and described first pipeline connection, be used for stopping after described LPCVD reaction chamber feeds DCS gas, in described first pipeline, feed first gas that DCS gas residual in described first pipeline can be expelled to described LPCVD reaction chamber.
2. device as claimed in claim 1 is characterized in that, described first pipeline is provided with first electrovalve, second electrovalve and DCS flow director; Described DCS flow director is arranged between described first electrovalve and second electrovalve;
Described first electrovalve is used to control DCS gas and feeds first pipeline; Described DCS flow director is used to regulate the flow of described DCS gas; The DCS gas that described second electrovalve is used for behind the regulating and controlling flow inputs to described LPCVD reaction chamber;
Connected entrance between described the 3rd pipeline and described first pipeline is between described first electrovalve and described DCS flow director.
3. device as claimed in claim 1 is characterized in that, described the 3rd pipeline is provided with the 3rd electrovalve, is used to control described first gas and feeds described the 3rd pipeline.
4. device as claimed in claim 1 is characterized in that, described second pipeline is provided with quadrielectron valve, the 5th electrovalve and NH
3Flow director; Described NH
3Flow director is arranged between described quadrielectron valve and the 5th electrovalve;
Described quadrielectron valve is used to control NH
3Gas feeds second pipeline; Described NH
3Flow director is used to regulate described NH
3Flow; Described the 5th electrovalve is used for the NH behind the regulating and controlling flow
3Input to described LPCVD reaction chamber.
5. a method that generates silicon nitride film feeds dichloro-dihydro silicon DCS gas and ammonia NH by first pipeline and second pipeline respectively in low-pressure chemical vapor deposition LPCVD reaction chamber
3, described DCS gas and NH
3Chemical reaction taking place generates silicon nitride film, it is characterized in that, after stopping to feed DCS gas in described LPCVD reaction chamber, also comprises:
By with the 3rd pipeline of described first pipeline connection, in described first pipeline, feed first gas that DCS gas residual in described first pipeline can be expelled to described LPCVD reaction chamber;
DCS gas that is discharged from and described NH
3Continue reaction and generate silicon nitride film.
6. method as claimed in claim 5 is characterized in that, feeds DCS gas by first pipeline in the LPCVD reaction chamber, comprising:
In first pipeline, feed DCS gas by first electrovalve on described first pipeline, after the DCS flow director on first pipeline was regulated the flow of described DCS gas, the DCS gas that will regulate behind the flow by second electrovalve inputed to described LPCVD reaction chamber.
7. method as claimed in claim 5 is characterized in that, feeds NH by second pipeline in the LPCVD reaction chamber
3, comprising:
In second pipeline, feed NH by the quadrielectron valve on second pipeline
3, the NH on second pipeline
3Flow director is regulated described NH
3Flow after, will regulate NH behind the flow by the 5th electrovalve
3Input to described LPCVD reaction chamber.
8. method as claimed in claim 6 is characterized in that, after stopping in described LPCVD reaction chamber feeding DCS gas, by with the 3rd pipeline of described first pipeline connection, in first pipeline, feed described first gas, comprising:
Close first electrovalve on described first pipeline, open second electrovalve on described first pipeline and the 3rd electrovalve on the 3rd pipeline, described first gas is passed in first pipeline through the connected entrance between described the 3rd pipeline and described first pipeline.
9. as the described method of arbitrary claim among the claim 5-8, it is characterized in that described first gas comprises: nitrogen, rare gas element or other and described DCS or NH
3The gas of chemical reaction does not take place.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910092851 CN102021531B (en) | 2009-09-09 | 2009-09-09 | Device and method for generating silicon nitride film |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910092851 CN102021531B (en) | 2009-09-09 | 2009-09-09 | Device and method for generating silicon nitride film |
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| CN102021531A true CN102021531A (en) | 2011-04-20 |
| CN102021531B CN102021531B (en) | 2012-12-05 |
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| CN102220565A (en) * | 2011-06-13 | 2011-10-19 | 南开大学 | Chemical vapor deposition equipment used for studying light trapping structure of silicon thin-film cell |
| CN102260860A (en) * | 2011-08-01 | 2011-11-30 | 无锡中微晶园电子有限公司 | Growth process for silicon nitride in silicon oxide nitride oxide silicon (SONOS) structure |
| CN102618842A (en) * | 2012-03-31 | 2012-08-01 | 上海宏力半导体制造有限公司 | Forming method of silicon nitride film |
| US20120273052A1 (en) * | 2011-04-29 | 2012-11-01 | Applied Materials, Inc. | Method and apparatus for gas delivery |
| CN103014662A (en) * | 2011-09-20 | 2013-04-03 | 甘志银 | Gas path apparatus for precisely controlling reactant flow rate in chemical vapor deposition equipment |
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| JP4358492B2 (en) * | 2002-09-25 | 2009-11-04 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | Method for producing silicon nitride film or silicon oxynitride film by thermal chemical vapor deposition |
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| US8927066B2 (en) * | 2011-04-29 | 2015-01-06 | Applied Materials, Inc. | Method and apparatus for gas delivery |
| CN102220565A (en) * | 2011-06-13 | 2011-10-19 | 南开大学 | Chemical vapor deposition equipment used for studying light trapping structure of silicon thin-film cell |
| CN102220565B (en) * | 2011-06-13 | 2012-08-29 | 南开大学 | Chemical vapor deposition equipment used for studying light trapping structure of silicon thin-film cell |
| CN102260860A (en) * | 2011-08-01 | 2011-11-30 | 无锡中微晶园电子有限公司 | Growth process for silicon nitride in silicon oxide nitride oxide silicon (SONOS) structure |
| CN102260860B (en) * | 2011-08-01 | 2013-04-24 | 无锡中微晶园电子有限公司 | Growth process for silicon nitride in silicon oxide nitride oxide silicon (SONOS) structure |
| CN103014662A (en) * | 2011-09-20 | 2013-04-03 | 甘志银 | Gas path apparatus for precisely controlling reactant flow rate in chemical vapor deposition equipment |
| CN102618842A (en) * | 2012-03-31 | 2012-08-01 | 上海宏力半导体制造有限公司 | Forming method of silicon nitride film |
| CN110777428A (en) * | 2019-09-23 | 2020-02-11 | 北京北方华创微电子装备有限公司 | Gas transportation system |
| CN111524778A (en) * | 2020-04-24 | 2020-08-11 | 北京北方华创微电子装备有限公司 | Gas transport pipeline, method for controlling gas transport and semiconductor equipment |
| CN111524778B (en) * | 2020-04-24 | 2023-06-16 | 北京北方华创微电子装备有限公司 | Gas transport pipeline, method for controlling gas transport and semiconductor device |
| CN113235070A (en) * | 2021-05-27 | 2021-08-10 | 聚灿光电科技（宿迁）有限公司 | CVD pipeline and have its CVD device |
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