CN102244105B - 具有高维持电压低触发电压esd特性的晶闸管 - Google Patents
具有高维持电压低触发电压esd特性的晶闸管 Download PDFInfo
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- CN102244105B CN102244105B CN 201110166667 CN201110166667A CN102244105B CN 102244105 B CN102244105 B CN 102244105B CN 201110166667 CN201110166667 CN 201110166667 CN 201110166667 A CN201110166667 A CN 201110166667A CN 102244105 B CN102244105 B CN 102244105B
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- thyristor
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- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000012423 maintenance Methods 0.000 claims description 14
- 239000011810 insulating material Substances 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000002829 reductive effect Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 21
- 238000000034 method Methods 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 9
- 238000013461 design Methods 0.000 description 7
- 230000002441 reversible effect Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
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Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN 201110166667 CN102244105B (zh) | 2011-06-20 | 2011-06-20 | 具有高维持电压低触发电压esd特性的晶闸管 |
Applications Claiming Priority (1)
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CN 201110166667 CN102244105B (zh) | 2011-06-20 | 2011-06-20 | 具有高维持电压低触发电压esd特性的晶闸管 |
Publications (2)
Publication Number | Publication Date |
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CN102244105A CN102244105A (zh) | 2011-11-16 |
CN102244105B true CN102244105B (zh) | 2013-07-03 |
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CN 201110166667 Active CN102244105B (zh) | 2011-06-20 | 2011-06-20 | 具有高维持电压低触发电压esd特性的晶闸管 |
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CN (1) | CN102244105B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104810393B (zh) * | 2015-04-16 | 2018-05-11 | 江苏艾伦摩尔微电子科技有限公司 | 一种具有双回滞特性的用于静电防护的可控硅 |
CN107833884B (zh) * | 2017-11-02 | 2023-06-23 | 杰华特微电子股份有限公司 | 用于静电保护的可控硅电路及其器件结构 |
CN109638013B (zh) * | 2018-12-28 | 2023-12-19 | 深圳贝特莱电子科技股份有限公司 | 一种触发电压连续可调的scr esd放电结构及其触发实现方法 |
CN111341770B (zh) * | 2020-02-19 | 2023-04-18 | 中国科学院微电子研究所 | 一种低触发电压的esd保护结构、集成电路及设备 |
CN111668209B (zh) * | 2020-06-10 | 2022-03-15 | 电子科技大学 | 一种低漏电的用于低压esd防护的可控硅整流器 |
CN116564961B (zh) * | 2023-06-29 | 2024-02-13 | 深圳中安辰鸿技术有限公司 | 一种lvtscr器件以及芯片静电放电电路 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1414639A (zh) * | 2001-10-22 | 2003-04-30 | 联华电子股份有限公司 | 设于硅覆绝缘中的硅控整流器及其应用电路 |
CN1774805A (zh) * | 2003-04-16 | 2006-05-17 | 沙诺夫股份有限公司 | 用于硅绝缘体技术上的静电放电(esd)保护的低电压可控硅整流器(scr) |
CN101017819A (zh) * | 2007-03-05 | 2007-08-15 | 浙江大学 | 一种利用多晶硅构建esd泄放通道的防护电路 |
CN101714578A (zh) * | 2008-09-30 | 2010-05-26 | 索尼株式会社 | 晶体管型保护器件、半导体集成电路及其制造方法 |
CN101834181A (zh) * | 2010-03-23 | 2010-09-15 | 浙江大学 | 一种nmos管辅助触发的可控硅电路 |
CN101916760A (zh) * | 2010-05-28 | 2010-12-15 | 上海宏力半导体制造有限公司 | 一种有效避免闩锁效应的可控硅esd保护结构 |
CN102054837A (zh) * | 2009-11-05 | 2011-05-11 | 上海宏力半导体制造有限公司 | 双向晶闸管以及静电保护电路 |
CN102054860A (zh) * | 2009-11-05 | 2011-05-11 | 上海宏力半导体制造有限公司 | 双向晶闸管以及静电保护电路 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100592749B1 (ko) * | 2004-11-17 | 2006-06-26 | 한국전자통신연구원 | 실리콘과 실리콘 게르마늄 이종 구조를 가지는 고전압전계효과 트랜지스터 및 그 제조 방법 |
-
2011
- 2011-06-20 CN CN 201110166667 patent/CN102244105B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1414639A (zh) * | 2001-10-22 | 2003-04-30 | 联华电子股份有限公司 | 设于硅覆绝缘中的硅控整流器及其应用电路 |
CN1774805A (zh) * | 2003-04-16 | 2006-05-17 | 沙诺夫股份有限公司 | 用于硅绝缘体技术上的静电放电(esd)保护的低电压可控硅整流器(scr) |
CN101017819A (zh) * | 2007-03-05 | 2007-08-15 | 浙江大学 | 一种利用多晶硅构建esd泄放通道的防护电路 |
CN101714578A (zh) * | 2008-09-30 | 2010-05-26 | 索尼株式会社 | 晶体管型保护器件、半导体集成电路及其制造方法 |
CN102054837A (zh) * | 2009-11-05 | 2011-05-11 | 上海宏力半导体制造有限公司 | 双向晶闸管以及静电保护电路 |
CN102054860A (zh) * | 2009-11-05 | 2011-05-11 | 上海宏力半导体制造有限公司 | 双向晶闸管以及静电保护电路 |
CN101834181A (zh) * | 2010-03-23 | 2010-09-15 | 浙江大学 | 一种nmos管辅助触发的可控硅电路 |
CN101916760A (zh) * | 2010-05-28 | 2010-12-15 | 上海宏力半导体制造有限公司 | 一种有效避免闩锁效应的可控硅esd保护结构 |
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CN102244105A (zh) | 2011-11-16 |
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