CN102234792B - Suspended spraying type metal organic chemical vapor deposition (MOCVD) reactor - Google Patents
Suspended spraying type metal organic chemical vapor deposition (MOCVD) reactor Download PDFInfo
- Publication number
- CN102234792B CN102234792B CN 201110160623 CN201110160623A CN102234792B CN 102234792 B CN102234792 B CN 102234792B CN 201110160623 CN201110160623 CN 201110160623 CN 201110160623 A CN201110160623 A CN 201110160623A CN 102234792 B CN102234792 B CN 102234792B
- Authority
- CN
- China
- Prior art keywords
- nozzle
- reactor
- reactor drum
- graphite plate
- carrier gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The invention relates to a suspended spraying type metal organic chemical vapor deposition (MOCVD) reactor, which can be used for the epitaxial growth of light emitting diodes (LEDs) on a large scale. The suspended spraying type MOCVD reactor comprises a nozzle, a base, a cover plate, flow diversion holes and a reaction zone, wherein the nozzle is arranged in the center of the base and comprises an upper nozzle and a lower nozzle; the lower nozzle is positioned on the lower part of the upper nozzle; the upper nozzle and the lower nozzle are provided with two radial channels respectively; the base comprise a large graphite disk; small graphite disks are arranged in the large graphite disk along the circumferential direction; wafer substrates are arranged in each small graphite disk along the circumferential direction; the bottom of the large graphite disk is provided with a revolution driving mechanism; the bottom of each small graphite disk is provided with an autorotation drive mechanism; and the flow diversion holes are formed on the inner wall of the cavity of the reaction zone along the circumferential direction. The suspended spraying type MOCVD reactor can improve the deposition uniformity of thin films and the utilization rate of source materials, prolong the service life of the graphite disks of the base, improve the introduction of source gas and the distribution of carrier gas, optimize the designs of the size of the reactor and the curve surface of the cover plate and prevent the generation of eddy current.
Description
Technical field
The present invention relates to the device of a kind of outstanding spray formula metal-organic chemical vapor deposition equipment (MOCVD) reactor drum, particularly a kind of epitaxially grown outstanding spray formula MOCVD reactor drum of LED in enormous quantities that can be used in.
Background technology
Reactor drum is the core of MOCVD.The MOCVD reactor drum that is used for the LED extension mainly contains three kinds: planar reaction device (Planetary Reactor), close-coupled vertically spray reactor drum (Close Coupled Showerhead Reactor) and Turbo Disc reactor drum.
DE 10247921A1 had described the MOCVD reactor drum of planar reaction device type.Wherein, pedestal is formed by the reactor drum bottom surface.Said reaction chamber bottom surface is provided with a plurality of substrate holders, and said substrate holder is rotated by air stream drives.Substrate is on each substrate holder.
WO2005080631 has announced a kind of entrance system of MOCVD reactor drum.Wherein, this reactor drum comprises top board, base plate and gas entry element.The gas inlet element is at the center of said reactor drum, and organometallic compound and hydrogenate and carrier gas divide the two-way gaseous feed to introduce reactor drum separately through said gas inlet element respectively.Another air inlet area that it is characterized in that this gas inlet element is used for one of two kinds of raw materials, to reduce the horizontal-extending of inlet region.
WO2008101982 has announced the equipment and the method for a kind of MOCVD of utilization or HVPE selective deposition crystallizing layer.Wherein, said reactor drum is made up of pedestal, top board, substrate, cooling channel, pedestal heating unit.Said apparatus characteristic is, can selectivity carry out active heating and initiatively cooling to said top board.
WO2010105947A1 has announced that a kind of top board is connected with the MOCVD reactor drum of non-homogeneous heat radiation film layer structure.Wherein, said reactor drum is made up of gas inlet element, top board, substrate, top board heat dissipation film, pedestal, pedestal heating unit.Said apparatus characteristic is that top board is connected with non-homogeneous heat radiation film layer structure, and the pedestal heating unit has eight heating zone of H1-H8, can improve uniformity of thin film deposition through regulating heat radiation film layer structure He Ge district heating power.
In MOCVD deposit film process, comprise following step basically:
(1) carrier gas is being carried reactant and is being flowed to reactor outlet from Reactor inlet, and this main air stream flows and to receive the strong influence of the secondary stream that temperature head, gas channel expansion, substrate rotation etc. cause.(2) main air stream forms three kinds of frictional belt that are parallel to substrate, i.e. three thin layers of flow velocity, temperature and reactant concn considerable change in wafer substrates (6) top.In the frictional belt, reactant is heated, and chemical reactions such as pyrolysis, displacement takes place, the formation reaction intermediate.(3) reactant or reaction intermediates are passed the frictional belt through convection current and concentration gradient diffusion, arrive substrate surface.(4) reactant or reaction intermediates are accomplished thin film deposition in surface reaction steps such as substrate surface absorption, surface diffusion, lattice displacement, chemical reactions.(5) reactant and byproduct of reaction (tail gas) are at surface desorption (desorption).(6) byproduct of reaction after the desorb returns main air stream through convection current and concentration diffusion again, finally is brought to outside the reaction chamber.
The planar reaction device exists serious reactant along problems such as journey loss, thermal convection vortexs.The process around main air stream sprays to from the center, reactant gases (organic source) constantly consumes in wafer substrates (6) deposition.Make reactant radially reduce gradually on the concentration distribution, thereby be difficult to produce thin and uniform concentration boundary layer.In gas ejection and gas transport process, because the heat effect of bottom heating makes the planar reaction device be easy to generate the thermal convection whirlpool, cause the fluctuation of wafer substrates (6) top reactant concn, influence the component and the thickness evenness of film growth.In addition, the planar reaction device of bottom pumping produces the lateral boundaries layer in reactor wall easily influences the mobile homogeneity, and phenomenons such as parasitic reaction or coagulating sedimentation also take place reactor wall easily.
Germany AIXTRON company is through the triple planar reaction device designs that flowed down technological improvements such as spirt gas, the radial radial flow of air-flow, flats horizontal reaction chamber, pedestal revolution and substrate rotation of central vertical, make Planetary Reactor reactor drum and the method thereof of exploitation can guarantee to deposit 40-60 wafer/batch, uniform film growth arranged.Then, because the importance of this reactor drum and the needs of LED industry development require ongoing effort ground to improve DESIGN OF REACTOR, performance and efficient, reduce the epitaxial growth cost.
Summary of the invention
The objective of the invention is to deficiency, design a kind of outstanding spray formula MOCVD reactor drum, improve the quality of deposit film, reduce the epitaxial growth cost to prior art.At this, should improve uniformity of thin film deposition and source material utilization ratio especially, reduce the clean and maintenance time, prolong the pedestal graphite plate life-span.In addition, the objective of the invention is to optimize reactor size and cover plate curved design, suppress the generation of eddy current through improving the distribution of source gas introducing and carrier gas.
Technical scheme of the present invention does; A kind of outstanding spray formula MOCVD reactor drum comprises nozzle, pedestal, cover plate, pod apertures and reaction zone, it is characterized in that; Said nozzle places the pedestal center; Nozzle comprises upper spray nozzle and following nozzle, and following nozzle is positioned at the upper spray nozzle bottom, and upper spray nozzle is respectively equipped with two radial passages with following nozzle; Said pedestal comprises big graphite plate, along the circumferential direction is provided with little graphite plate in the said big graphite plate, along the circumferential direction is provided with wafer substrates in each little graphite plate, and big graphite plate bottom is provided with the revolution driving mechanism, and each gravelstone disc bottom is provided with the rotation driving mechanism; The reaction zone cavity inner wall along the circumferential direction is provided with pod apertures.
Below the present invention is further described.
Further, said following nozzle tip is provided with guides, and upper spray nozzle top is last carrier gas passage, and the upper spray nozzle bottom is the group V source passage, and following nozzle top is III clan source passage, and following nozzle bottom is following carrier gas passage.
Further, said upward carrier gas passage is a horizontal direction, and said group V source passage is a horizontal direction, and said III clan source passage is a diagonal upward direction, and said carrier gas passage down is a horizontal direction.
Further, said revolution driving mechanism comprises drive-motor, drives the base bottom tubular shaft by drive-motor and rotates.
Further, said rotation driving mechanism comprises motor, and is provided with sun and planet gear in the gravelstone disc outside, by the electric motor driving sun and planet gear, and then drives the rotation of gravelstone disc.
Further, the height of said reactor drum is 25mm-30mm.
Further, the height of said pod apertures be lower than cover plate along the limit 3mm-5mm.
Height for reactor is very big to the natural convection influence, and along with the reduction of height for reactor, the thermograde of wafer substrates top increases generally speaking, and forcing flows is weakened gradually, and has longitudinal shrinking turbulence to occur.Therefore, height for reactor should be got a preferred values, avoids forcing the generation of flowing with the eddy current incident as far as possible.Rule of thumb, the height for reactor span is advisable with 25mm～30mm.Change traditional bottom pumping design, the evenly distributed pod apertures of design at reaction chamber inwall certain altitude place, the control air-flow is in radially-arranged homogeneity.3mm～5mm's pod apertures height is advisable along the limit to be lower than cover plate.Therefore,, make that as far as possible the skeletal lines of reactor drum cover plate is consistent with mobile main air stream direction, form by the radial radial flow of center to cylindrical through parameters such as appropriate design height for reactor, cover plate curved surface and pod apertures height.
The airpath design aspect makes the single nozzle design of routine into upper and lower built up nozzle device.Following nozzle upwards sprays the III clan source at a certain angle under the guides effect, following carrier gas sprays in the horizontal direction.Upper spray nozzle sprays group V source and last carrier gas in the horizontal direction.Form " going up carrier gas, group V source, III clan source, carrier gas down " four airflow layers at the tuyere arrangement port from top to bottom successively, avoided the generation of pre-reaction as far as possible.Simultaneously,, intermediary III clan source, group V source airflow layer are formed clamping action, make its maintenance laminar flow regime as far as possible, the generation of having avoided eddy current, having breathed heavily stream etc. through the flow parameter of carrier gas passage and following carrier gas passage rationally is set.Following carrier gas also has the inhibition thermal lift, impels thermal field to act on more uniformly.Four airflow layers are in the radial flow process; Because the effect of cover plate skeletal lines; The increase that narrows the reactant concn that causes of flow area has remedied the radially reduction of the reactant concn that is caused in the wafer substrates deposition consumes because of reactant gases (organic source), helps improving the homogeneity of deposit film.
The foundation design aspect adds the thermal recovery RF heating, in the pedestal bottom uniform heat-field is provided.Base motion comprises that revolution of big graphite plate and the rotation of gravelstone disc improve homogeneity between the sheet of substrate surface thin film deposition.The pedestal driving mechanism is taked simpler Mechanical Driven mode, and revolution drives tubular shaft by drive-motor and accomplishes, and rotation is driven six little graphite plates and at the uniform velocity is synchronized with the movement by the electric motor driving sun and planet gear.Therefore,, make along the wafer substrates of circumferentially placing and obtained same flow field condition (same speed, temperature, concentration distribution etc.), set up circumferential homogeneity along pedestal through the revolution of pedestal.Through the rotation of little graphite plate, obtained wafer substrates and mixed at circumferential uniform concentration, help improving thin film deposition criticize between and the homogeneity between sheet.
Know by above; The present invention can improve uniformity of thin film deposition and source material utilization ratio as a kind of outstanding spray formula MOCVD reactor drum, reduces the clean and maintenance time; Prolong the pedestal graphite plate life-span; Also can improve the distribution of source gas introducing and carrier gas, optimize reactor size and cover plate curved design, suppress the generation of eddy current.
Description of drawings
Fig. 1 is outstanding spray formula MOCVD reactor drum front view;
Fig. 2 is an A-A face sectional view among Fig. 1;
Fig. 3 is the nozzle arrangements synoptic diagram
Fig. 4 is a MOCVD reactor cavity wall construction synoptic diagram;
Fig. 5 is a MOCVD reactor drum base construction synoptic diagram;
Embodiment
Like Fig. 1-shown in Figure 4; A kind of outstanding spray formula MOCVD reactor drum; Comprise nozzle 1, pedestal 19, cover plate 11, pod apertures 18 and reaction zone 2, said nozzle 1 places pedestal 19 centers, and nozzle comprises upper spray nozzle 7 and following nozzle 8; Following nozzle 8 is positioned at upper spray nozzle 7 bottoms, and upper spray nozzle is respectively equipped with two radial passages with following nozzle; Said pedestal 19 comprises big graphite plate 3; Along the circumferential direction be provided with gravelstone disc 4 in the said big graphite plate 3; Along the circumferential direction be provided with wafer substrates 6 in each gravelstone disc 4, big graphite plate 3 bottoms are provided with revolution driving mechanism 20, and each gravelstone disc 4 bottom is provided with rotation driving mechanism 22; The reaction zone cavity inner wall along the circumferential direction is provided with pod apertures 18.
Said following nozzle 8 tops are provided with guides, and upper spray nozzle 7 tops are last carrier gas passage 14, and upper spray nozzle 7 bottoms are group V source passage 15, and following nozzle 8 tops are III clan source passage 16, and following nozzle 8 bottoms are following carrier gas passage 17.
Last carrier gas passage (14) is a horizontal direction, and group V source passage (15) is a horizontal direction, and III clan source passage (16) is a diagonal upward direction, and following carrier gas passage (17) is a horizontal direction.
Height for reactor H is 30mm, and pod apertures height h is 12mm, in the gallium nitride film deposition process; Said wafer substrates 6 can be heated to 350 ℃～1200 ℃ through well heater 12; Because of the inner water-cooled of cover plate, inner wall temperature is more much lower than said wafer substrates 6 temperature, is about 200 ℃～500 ℃.Following carrier gas is high-purity H
2, purity is 6N, flow is 2.5L/min; The III clan source is TMGa (trimethyl-gallium), introduces III clan source passage 16 through carrier gas, and TMGa content is 14 μ mol/min, and channel capacity is controlled to be 2L/min; In N-GaN or P-GaN process of growth, also can make TEAl (triethyl aluminum) or TMIn (trimethyl indium) or Cp
2Mg (pentamethylene magnesium) introduces III clan source passage 16 through carrier gas.Equally, group V source is NH
3(ammonia) can make the form of ammonia or hydrogen carrier gas introduce group V source passage 15, and flow control is 2L/min; If will form the crystal of different components, also can make SiH
4(silane) or PH
3(phosphine) or AsH
3(arsine) is incorporated in the group V source passage 15.Following carrier gas is high-purity H
2, purity is 6N, flow is 3L/min.Said pedestal 19 can hold the big graphite plate 3 of Ф 360mm, at reaction zone) corresponding big graphite plate 3 belows, territory, six gravelstone discs 4 are symmetric arrangement in the form of a ring." wafer substrates can be accomplished the 42 2 " epitaxys of substrate for 6, one batches to be placed with seven 2 in each gravelstone disc 4.Big graphite plate 3 is under revolution driving mechanism 20 drives, and with the speed low speed rotation of 60rpm, six gravelstone discs 4 with the speed low speed rotation of 20～30rpm, make wafer substrates 6 circumferentially obtain uniform reactant concn under the drive of sun and planet gear 21.Through regulating pumping speed, control tail gas overflows the speed of pod apertures 18.Under the guide effect of cover plate skeletal lines 11, make the main air stream flow velocity little by little increase in radial direction, effectively compensated the reactant concn that is caused because of the continuous consumption reaction thing of chemical reaction and reduced.
Claims (5)
1. outstanding spray formula MOCVD reactor drum; Comprise nozzle (1), pedestal (19), cover plate (11), pod apertures (18) and reaction zone (2); It is characterized in that said nozzle (1) places pedestal (19) center, nozzle comprises upper spray nozzle (7) and following nozzle (8); Following nozzle (8) is positioned at upper spray nozzle (7) bottom, and upper spray nozzle is respectively equipped with two radial passages with following nozzle; Said pedestal (19) comprises big graphite plate (3); Along the circumferential direction be provided with little graphite plate (4) in the said big graphite plate (3); Along the circumferential direction be provided with wafer substrates (6) in each little graphite plate (4); Big graphite plate (3) bottom is provided with revolution driving mechanism (20), and each little graphite plate (4) bottom is provided with rotation driving mechanism (22); The reaction zone cavity inner wall along the circumferential direction is provided with pod apertures (18); Said nozzle (8) top down is provided with guides; Upper spray nozzle (7) top is last carrier gas passage (14); Upper spray nozzle (7) bottom is group V source passage (15), and following nozzle (8) top is III clan source passage (16), and following nozzle (8) bottom is following carrier gas passage (17);
Said upward carrier gas passage (14) is a horizontal direction;
Said group V source passage (15) is a horizontal direction;
Said III clan source passage (16) is a diagonal upward direction;
Said carrier gas passage (17) down is a horizontal direction.
2. according to the said outstanding spray formula MOCVD reactor drum of claim 1, it is characterized in that said revolution driving mechanism (20) comprises drive-motor, drive pedestal (19) bottom tubular shaft by drive-motor and rotate.
3. according to the said outstanding spray formula MOCVD reactor drum of claim 1; It is characterized in that said rotation driving mechanism (22) comprises motor, and be provided with sun and planet gear (21) in little graphite plate (4) outside; Drive sun and planet gear (21) by motor (21), and then drive little graphite plate (4) rotation.
4. according to the said outstanding spray formula MOCVD reactor drum of claim 1, it is characterized in that the height H of said reactor drum is 25mm-30mm.
5. according to the said outstanding spray formula MOCVD reactor drum of claim 1, it is characterized in that, the height h of said pod apertures be lower than cover plate along the limit 3mm-5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110160623 CN102234792B (en) | 2011-06-15 | 2011-06-15 | Suspended spraying type metal organic chemical vapor deposition (MOCVD) reactor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110160623 CN102234792B (en) | 2011-06-15 | 2011-06-15 | Suspended spraying type metal organic chemical vapor deposition (MOCVD) reactor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102234792A CN102234792A (en) | 2011-11-09 |
| CN102234792B true CN102234792B (en) | 2012-12-05 |
Family
ID=44885901
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110160623 Active CN102234792B (en) | 2011-06-15 | 2011-06-15 | Suspended spraying type metal organic chemical vapor deposition (MOCVD) reactor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102234792B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103074609A (en) * | 2012-03-16 | 2013-05-01 | 光达光电设备科技（嘉兴）有限公司 | Graphite plate and special-shaped substrate |
| CN103074608A (en) * | 2012-03-16 | 2013-05-01 | 光达光电设备科技（嘉兴）有限公司 | Method for arranging substrates in graphite plate, and graphite plate |
| CN106835266A (en) * | 2015-12-03 | 2017-06-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | The sample tray of lifting Material growth production capacity and improvement uniformity |
| CN107447205B (en) * | 2017-07-24 | 2019-10-15 | 江苏实为半导体科技有限公司 | A kind of high effective deposition CVD device |
| CN113088929B (en) * | 2021-03-01 | 2022-05-20 | 中山德华芯片技术有限公司 | MOCVD reaction chamber and application thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1865495A (en) * | 2005-05-20 | 2006-11-22 | 中国科学院半导体研究所 | Revolution and rotation arrangement in reaction chamber of metallorganics chemical vapor deposition device |
| JP4945185B2 (en) * | 2006-07-24 | 2012-06-06 | 株式会社東芝 | Crystal growth method |
-
2011
- 2011-06-15 CN CN 201110160623 patent/CN102234792B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN102234792A (en) | 2011-11-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107690487B (en) | Injector for semiconductor epitaxial growth | |
| CN100582298C (en) | Process and apparatus for depositing semiconductor layers using two process gases, one of which is preconditioned | |
| CN102234792B (en) | Suspended spraying type metal organic chemical vapor deposition (MOCVD) reactor | |
| CN102485953B (en) | Pallet device and crystallized film growth device | |
| JP5613680B2 (en) | MOCVD reactor with cylindrical gas inlet part | |
| CN101495675B (en) | Chemical vapor deposition reactor having multiple inlets | |
| JP5562409B2 (en) | Semiconductor device manufacturing method, substrate manufacturing method, and substrate processing apparatus | |
| US20110073039A1 (en) | Semiconductor deposition system and method | |
| WO2012139006A2 (en) | Metal-organic vapor phase epitaxy system and process | |
| JP2011501409A (en) | Chemical vapor deposition reaction chamber | |
| CN105441904A (en) | Gas spray device, chemical vapor deposition device and method | |
| KR20130014488A (en) | Semiconductor thin-film manufacturing method, semiconductor thin-film manufacturing apparatus, susceptor, and susceptor holding tool | |
| CN102395704A (en) | Plasma deposition | |
| CN112695302B (en) | MOCVD reactor | |
| JP4885000B2 (en) | Vapor growth apparatus and vapor growth method | |
| CN102230165A (en) | Spray header structure for chemical vapor deposition epitaxial equipment | |
| CN106498368A (en) | A kind of spray head for MOCVD device | |
| JP2011222592A (en) | Vapor phase deposition apparatus and vapor phase deposition method | |
| JP2024503166A (en) | Semiconductor growth apparatus and its operating method | |
| JP6257437B2 (en) | Crystal growth equipment | |
| US20100307418A1 (en) | Vapor phase epitaxy apparatus of group iii nitride semiconductor | |
| CN102471886A (en) | Apparatus for forming deposited film and method for forming deposited film | |
| CN103361624B (en) | Metallo-organic compound chemical vapor deposition method and device | |
| CN103088414A (en) | Vapor-phase epitaxy deposition apparatus realizing nitride crystal homoepitaxy | |
| KR20040091651A (en) | Method and device for depositing semi-conductor layers |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |