CN106498368A - A kind of spray head for MOCVD device - Google Patents
A kind of spray head for MOCVD device Download PDFInfo
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- CN106498368A CN106498368A CN201611022509.1A CN201611022509A CN106498368A CN 106498368 A CN106498368 A CN 106498368A CN 201611022509 A CN201611022509 A CN 201611022509A CN 106498368 A CN106498368 A CN 106498368A
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- reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
Abstract
The invention discloses a kind of spray head for MOCVD device, the exhaust duct including multiple inlet plenums being mutually isolated, corresponding admission line and positioned at spray head center.As spray head has air induction conduit and exhaust duct simultaneously, reacting gas sprays into reaction chamber from the top down through the air induction conduit of spray head, finally extracted out through the exhaust duct at spray head center from bottom to top, reaction intracavity gas are radially from outer lateral center flow, the adverse effect that reactant is lost along journey can be greatly decreased, be conducive to obtaining good epitaxial growth uniformity.Multiple mutually isolated inlet chambers optionally transport first, second or the 3rd reacting gas, and the utilization rate of metal organic gas can be substantially improved by selecting the suitable permutation and combination of inlet chamber, substantially eliminate the reactant deposition of the side wall of reaction chamber.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly, to a kind of spray head for MOCVD device.
Background technology
Metal organic chemical vapor deposition（MOCVD）Technology is the important skill for growing high quality compound semiconductor thin-film material
Art means, have significant superiority the structures such as thin layer hetero-junctions, superlattices and SQW are prepared, have become iii-v
With the core growth technology of II-VI group compound semiconductor and its multivariate solid solution material, especially gallium nitride base light emitting is being prepared
The aspect such as diode and laser instrument obtains immense success.
At present, the MOCVD device of main flow can be divided into horizontal and rectilinear reaction chamber according to airpath design, wherein：
As representative, which adopts rotation to add revolution to horizontal reaction chamber design planetary reaction chamber mainly with Aixtron companies
Planetary rotation technology, reactant enter reaction chamber from center jet, along substrate radially to outer rim bottom horizontal flow sheet, utilize
The rotation of substrate and revolution obtain stable laminar flow, problem are lost to solve the intrinsic reactant of horizontal reaction chamber along journey, from
And the uniform speed of growth can be obtained on the surface of a substrate.Its advantage is that low speed rotation, gas usage are little, but above reaction chamber
Quartz be covered with the risk of deposition, and equipment is complicated, the more difficult control of growth course, and therefore plant maintenance and growth cost are high.
Rectilinear reaction chamber is with Emcore（Purchased by Veeco）High speed disc type reaction chamber（RDR）And Thomas
Swan（Purchased by Aixtron）Tight near coupling spray（CCS）Reaction chamber is representative.High speed disc type reaction chamber（RDR）'s
Reactant enters reaction chamber from top flange spout, should using the pedestal pump efficiency that at a high speed rotation is produced, it is suppressed that due to spout and
The thermal convection current that pedestal distance greatly and easily causes, forms stable piston flow, it is ensured that epitaxially grown uniformity, and its advantage is
Reaction cavity wall is deposited less, utilization rate of equipment and installations is high, but gas usage is big.And close coupling fountain（CCS）The characteristics of reaction chamber
It is spray head and the distance between substrate very little, is conducive to suppressing thermal convection current to obtain stable laminar flow, its advantage is gas usage
Little, utilization rate of raw materials is high, but reaction cavity wall deposition is serious, cleaning time is more.
For the MOCVD device of above-mentioned main flow is designed, except require to react the non-vortex Laminar Flow of intracavity gas and
Outside good these basic demands of epitaxial growth uniformity, in addition it is also necessary to which consideration further reduces the production cost of epitaxial wafer.Right
In the reaction chamber design requirement of preferable MOCVD device, following points are summarized：1. reaction chamber capacity and utilization rate of equipment and installations are improved
（Reduce clean and maintenance time etc.）To improve volume of production；2. improve epitaxial growth uniformity and repeatability to improve yield rate；
3. reduce gas usage, the utilization rate of metal organic gas is improved reducing operating cost.It can be seen that, the MOCVD of above-mentioned main flow is anti-
Answer chamber respectively there are pluses and minuses, above demand can not be met simultaneously, improving metal organic gas utilization rate and reducing reaction chamber
The aspects such as side wall deposition have larger room for improvement.
Content of the invention
It is an object of the invention to provide a kind of spray head for MOCVD device, the spray head can be substantially improved metal
The utilization rate of organic gas, substantially eliminates the reactant deposition of reaction chamber side wall, while obtaining good epitaxial growth uniformity.
The object of the present invention is achieved like this：
A kind of spray head for MOCVD device, including for receiving the inlet plenum of reacting gas, inlet plenum is one by pushing up
The hollow cylinder that plate, lateral wall, medial wall and base plate are constituted, is sequentially provided with cooling chamber and reaction chamber below inlet plenum,
It is characterized in that：Air induction conduit is provided with the base plate of inlet plenum, the center of the top board above the inlet plenum is provided with exhaust duct, air inlet
Conduit is passed down through the cooling chamber below inlet plenum and is connected with reaction chamber, and the reacting gas in air inlet room is passed through reaction chamber
In, the upper end open of exhaust duct outside air inlet room, after the lower end of exhaust duct sequentially passes through downwards top board, base plate, cooling chamber
It is connected with reaction chamber, the reacting gas in air inlet room is sprayed in reaction chamber from the top down through air induction conduit, the tail in reaction chamber
Gas is extracted out from bottom to top through exhaust duct, reacts the gas of intracavity radially from outer lateral center flow.
There is exhaust duct a lower surface towards reaction chamber, cooling chamber there is a lower surface towards reaction chamber,
There is between the lower surface of exhaust duct and the lower surface of cooling chamber different distances, the distance is more than or equal to zero, less than cold
But the distance between pedestal in the lower surface in chamber and reaction chamber.
It is provided with the vertical dividing walls of 1--7 in air inlet room, inlet plenum is separated into 2--8 and is mutually isolated by dividing wall
Inlet chamber, is provided with respective air inlet to receive reacting gas on the top board of each inlet chamber or on the wall of side, enters at each
Respective air induction conduit is provided with the base plate of air cavity, and the reacting gas of corresponding air inlet intracavity is sprayed by air induction conduit from the top down
Enter reaction chamber.
Preferably, 2--3 vertical dividing wall is provided with air inlet room, and inlet plenum is separated into 3--4 mutually by dividing wall
The inlet chamber being isolated.
Vertical dividing wall is circular or polygon, or combinations thereof.
Multiple inlet chambers being mutually isolated include：1 to 7 inlet chambers for transporting first gas, 1 to 7 transport the second gas
The inlet chamber of body, 0 to 6 inlet chambers for transporting third gas.Multiple inlet chambers being mutually isolated optionally transport first
Gas, second gas or third gas, so that carry out permutation and combination.
The first gas are metal organic gas, or mixed gas of metal organic gas and carrier gas；Described second
Gas is hydride gas, or the mixed gas of hydride gas and carrier gas；The third gas be carrier gas, including nitrogen,
One or more in hydrogen and noble gases.
Compared with prior art, the present invention has following features：
1st, the present invention has air induction conduit and exhaust duct simultaneously, has essence different with the spray head of traditional MOCVD device.Pass
The tail gas of system MOCVD device is substantially from the outside of reaction chamber to be extracted out from top to bottom, the part of its spray head or identity function
Only gas is sprayed from the top down, the gas radial direction Dou Cong center for reacting intracavity is flowed laterally.The present invention is on top
The center of plate is provided with exhaust duct, and reacting gas is sprayed in reaction chamber from the top down through the air induction conduit of spray head, most
Extracted out through the exhaust duct at spray head center from bottom to top eventually, the gas of intracavity is reacted radially from outer lateral center flow.Should
Unique gas flow pattern can be greatly decreased the adverse effect that reactant is lost along journey, be conducive to obtaining good epitaxial growth
Uniformity.
2nd, there is exhaust duct of the invention a lower surface towards reaction chamber, cooling chamber there is one towards reaction chamber
Lower surface, there is different distances between the lower surface of exhaust duct and the lower surface of cooling chamber, the distance is more than or equal to
Zero, less than the distance between pedestal in the lower surface and reaction chamber of cooling chamber.This explanation exhaust duct may extend to reaction chamber
Inside, the distance between the lower surface of lower surface and cooling chamber by adjusting exhaust duct can play regulation reaction chamber
The important function of interior gas flowing.
3rd, in the present invention, multiple mutually isolated inlet chambers optionally transport first, second or the 3rd reaction gas
Body, can be substantially improved the utilization rate of metal organic gas by selecting the suitable permutation and combination of inlet chamber, substantially eliminate reaction
The reactant deposition of the side wall in chamber.
4th, corresponding air inlet is respectively arranged with the top board of multiple in the present invention inlet chambers being mutually isolated or on the wall of side
Mouthful, thus can independent control reaction gas flow and gaseous species, and can be designed according to the species for transporting reacting gas
The pipe diameter size of air induction conduit, shape and tube pitch, therefore can obtain the process window of larger epitaxial growth uniformity.
5th, in the present invention, reactant gas flow concentrates on the space above the pedestal of reaction chamber, protects below reaction chamber
Accessory is not polluted by reactant, increases the service life of accessory, reduces cost of equipment maintenance.
Description of the drawings
Fig. 1 is the cross-sectional view for arranging spray head of the present invention MOCVD device in embodiment 1；
Fig. 2 is spray head of the present invention A-A in embodiment 1 to upward view；
Fig. 3 is spray head of the present invention B-B direction top view in embodiment 1；
Fig. 4 is spray head of the present invention A-A in example 2 to upward view；
Fig. 5 is spray head of the present invention B-B direction top view in example 2；
Fig. 6 is spray head of the present invention A-A in embodiment 3 to upward view；
Fig. 7 is spray head of the present invention B-B direction top view in embodiment 3.
Specific embodiment
With reference to embodiment and compare accompanying drawing 1 the present invention is described in further detail.
Embodiment 1：
As shown in figure 1, the invention provides a kind of spray head for MOCVD device, including：For receiving entering for reacting gas
Air chamber 1, inlet plenum 1 are hollow cylinders being made up of top board 100, lateral wall 110, medial wall 120 and base plate 130,
Two vertical circular partition walls 201,202 are provided with inlet plenum 1, and inlet plenum 1 is separated into by two circular partition walls 201,202
Three inlet chambers 301,302 and 303 being mutually isolated, in the top board 100 of three inlet chambers 301,302 and 303 being mutually isolated
On be respectively arranged with corresponding air inlet 501,502 and 503, to receive different reacting gas, three be mutually isolated enter
It is respectively arranged with corresponding air induction conduit 401,402 and 403 on the base plate 130 of air cavity 301,302 and 303, air induction conduit 401,
402 are each passed through the cooling chamber 700 below inlet plenum 1 with 403 is connected with reaction chamber 800, by inlet chamber 301,302 and 303
Interior reacting gas is passed through in reaction chamber 800.
Exhaust duct 600 is arranged on the center of the top board 100 of spray head, tail gas using the demountable structure that sealing ring is sealed
Conduit 600 is adjacent with the side wall 120 of inlet plenum 1, and exhaust duct 600 is formed by double-layer stainless steel steel-pipe welding, and there is tail gas centre
Conduit cooling chamber 620, outside inlet plenum 1, the lower end of exhaust duct 600 sequentially passes through downwards the upper end open of exhaust duct 600
It is connected with reaction chamber 800 after top board 100, base plate 130, cooling chamber 700, the tail gas in reaction chamber 800 is extracted out from bottom to top.
Reaction chamber 800 includes side wall 810, is located at the pedestal 820 of 800 bottom of reaction chamber, and pedestal 820 can be revolved around central shaft
Turn；It is provided with above pedestal 820 for placing the wafer region of chip；Heater 830 is provided with the lower section of pedestal 820, is passed through
The heating of heater 830 can make the chip temperature on pedestal 820 reach the temperature of suitable growth crystal.
As shown in Figures 2 and 3, inlet plenum 1 is separated into three annular shapes by two vertical circular partition walls 201 and 202
Inlet chamber 301,302 and 303, and the air induction conduit 401,402 and 403 of three inlet chambers respectively corresponding inlet chamber 301,
It is uniformly distributed in 302 and 303, in regular single-turn or multi-turn concentric arrays, it is ensured that all entrance by air induction conduit 401 is reacted
The gas flow rate in chamber 800 is identical, and all gas flow rates for entering reaction chamber 800 by air induction conduit 402 are identical, all by entering
The gas flow rate that airway 403 enters reaction chamber 800 is identical.
In the present embodiment, three inlet chambers are followed successively by from outside to inside and transport the inlet chamber 302 of second gas, transport the first gas
The inlet chamber 301 of body and the inlet chamber 303 for transporting third gas.The first gas are metal organic gas, or metal has
Machine gas and the mixed gas of carrier gas；The second gas are hydride gas, or the gaseous mixture of hydride gas and carrier gas
Body；The third gas are carrier gas, including one or more in nitrogen, hydrogen and noble gases.
Single-turn or multi-turn concentric arrays of the air induction conduit 401,402 and 403 of three inlet chambers in rule, wherein transport
The air induction conduit 401 of the inlet chamber 301 of first gas employs individual pen structure, to form sufficiently fast flow velocity, it is ensured that metal has
Transport capability of the machine gas to 820 surface of motor seat, is preferred with covering the outer rim of pedestal 820.
Hydride gas are received through inlet chamber 302 and are sprayed from air induction conduit 402, on the one hand drive the metal on the inside of which to have
Machine gas is streamed to center flow with level, while also preventing the side wall of the metal organic gas of inner side to reaction chamber 800
810 diffusions, prevent the reactant of side wall 810 from depositing.
Carrier is received through inlet chamber 303 and is sprayed from air induction conduit 403, by the metal organic gas for mixing and hydrogenation
Thing gas is suppressed downwards, you can prevent the expansion of the tube wall 610 of metal organic gas spray head upward and exhaust duct 600
Dissipate, reduce the deposition of above-mentioned zone reactant, prior effect is can to increase metal organic gas to sinking on pedestal 820
Product efficiency, is improved metal organic gas utilization rate, can also be adjusted the speed of growth during area epitaxy by flow-control.
Reacting gas is provided with cavity in the lower section of pedestal 820 while pedestal 820 are transported to from top to bottom through spray head
Purge gas air inlet 840, cavity purge gas can be second gas or third gas, and air-flow blows from bottom to top, with
Prevent top from getting off the mixed gas containing metal organic gas and hydride gas to the cavity flowing below pedestal 820, prevent
Only the deposition of the 810 cavity of resorption body portion of side wall of reaction chamber 800 and protection heater 830.
In the present embodiment, the spray head of MOCVD device has air induction conduit 401,402 and 403 and exhaust duct simultaneously
600, there is essence different with the spray head of traditional MOCVD device.The tail gas of traditional MOCVD device is substantially from reaction chamber
Outside is extracted out from top to bottom, and gas is only sprayed by the part of its spray head or identity function from the top down, reacts the gas of intracavity
Flow laterally at body radial direction Dou Cong center.The spray head of the MOCVD device of the present embodiment is provided with tail gas in center
Pipe 600, reacting gas are extracted from bottom to top through the offgas duct 600 at spray head center, the gas in reaction chamber 800 radially from
Outer lateral center flow.Unique air current flow mode can be greatly decreased the adverse effect that reactant is lost along journey, be conducive to
Obtain good epitaxial growth uniformity.
Exhaust duct 600 in the present embodiment extends to the inside of reaction chamber 800.The lower surface of cooling chamber 700 and reaction
The distance between pedestal 820 in chamber 800 is 70mm, and between the lower surface of the lower surface of exhaust duct 600 and cooling chamber 700
Distance be 35mm.By adjusting（As exhaust duct is the demountable structure of sealing ring sealing, can tear open when blow-on
Replacing is unloaded, while the distance can be adjusted）The distance between lower surface of the lower surface of exhaust duct 600 and cooling chamber 700, can
To play the important function for adjusting gas flowing in reaction chamber 800.
The characteristics of the present embodiment gas transport is：（1）Metal organic gas are concentrated by the inlet chamber 301 for transporting first gas
Receive and reaction chamber 800 is entered from small number of air induction conduit 401, it is ensured that the metal organic gas of high concentration quickly reach
To pedestal 820, the utilization rate of metal organic gas greatly improved.（2）Hydride gas are by transporting on the outside of spray head
The inlet chamber 302 of second gas is received and enters reaction chamber 800 from air induction conduit 402, has both driven the metal on the inside of which organic
Gas is streamed to center flow with level, prevents metal organic gas to spread to the side wall 810 of reaction chamber 800 again, prevents side
Wall 810 is deposited.（3）Inlet chamber 303 of the carrier through transporting third gas receives and sprays and will mix from air induction conduit 403
Metal organic gas and hydride gas are suppressed downwards, are prevented from forming turbulent flow in spray head central area, are improved reaction chamber 800
The stability of gas flowing, while prevent the tube wall 610 of metal organic gas spray head upward and exhaust duct 600
Diffusion, reduces the deposition of reactant, and can also increase metal organic gas to the deposition efficiency on pedestal 820, by stream
Amount controls to adjust the speed of growth during area epitaxy.（4）Cavity purge gas air inlet 840, gas are set below pedestal 820
Stream blows from bottom to top, prevents deposition and the protection heater 830 of the 810 cavity of resorption body portion of side wall of reaction chamber 800.（5）Reaction
Gas is finally extracted from bottom to top from the offgas duct 600 for being located at spray head center, therefore gas radial direction in reaction chamber 800
It is from from outer lateral center flow, reduces the adverse effect that reactant is lost along journey.
It can be seen that, Each performs its own functions for the reacting gas in three inlet chambers 301,302 and 303, forms uniqueness in reaction chamber 800
Air current flow mode, it is ensured that stable Laminar Flow, not only greatly improves metal organic gas utilization rate but also is greatly decreased
The reactant deposition of the side wall 810 of reaction chamber 800.Due to the reacting gas in three inlet chambers 301,302 and 303 can pass through into
501,502 and 503 independent control gas flow of QI KOU, therefore can obtain the process window of larger epitaxial growth uniformity.
The reacting gas of three inlet chambers 301,302 and 303 in addition to combinations of the above, also other combination of gases
The effect of above-described embodiment can equally be reached.Table 1 lists some feasible reacting gas combinations.
.
Embodiment 2：
As shown in Figure 4 and Figure 5, the structure of embodiment 2 is essentially identical with the structure of embodiment 1, and difference is：
Three vertical circular partition walls 201,202 and 203 by inlet plenum 1 be separated into four circular inlet chambers 301,302,
303 and 304, and the air induction conduit 401,402,403 and 404 of four inlet chambers is respectively in corresponding inlet chamber 301,302,303
With 304 in be uniformly distributed, in regular single-turn or multi-turn concentric arrays.
In the present embodiment, four inlet chambers are followed successively by from outside to inside and transport the inlet chamber 302 of second gas, transport the first gas
The inlet chamber 301 of body and the inlet chamber 303,304 for transporting third gas.The first gas be metal organic gas, Huo Zhejin
Category organic gas and the mixed gas of carrier gas；The second gas are hydride gas, or hydride gas and carrier gas is mixed
Close gas；The third gas are carrier gas, including one or more in nitrogen, hydrogen and noble gases.
The air induction conduit 401,402,403 and 404 of four inlet chambers is in regular single-turn or multi-turn concentric arrays, wherein defeated
The air induction conduit 401 of the inlet chamber 301 of fortune first gas employs individual pen structure and quantity is less, further enhancing metal
Transport capability of the organic gas to 820 surface of motor seat, is preferred with covering the outer rim of pedestal 820.
Inlet chamber 303 in embodiment 1 transports third gas, and two in the present embodiment inlet chamber 303 and 304 is simultaneously defeated
Fortune third gas, can so further enhance the ability for adjusting gas flowing and epitaxial growth speed.
Inlet chamber 303 of the carrier through transporting third gas is received and is sprayed from air induction conduit 403, by the metal for mixing
Organic gas and hydride gas are pressed down, and form compacting air-flow.Compacting air-flow can prevent metal organic gas spray upward
Head diffusion is drenched, the deposition of the region reactant on spray head is reduced, it is also possible to increase metal organic gas to substrate on pedestal 820
Deposition efficiency, improve metal organic gas utilization rate, growth speed when also can adjust the area epitaxy by flow-control
Degree.
Inlet chamber 304 of the carrier through transporting third gas is received and is sprayed from air induction conduit 404, by organic for barrier metal gas
Body and hydride gas were diffused up before offgas duct is entered, and were prevented from forming turbulent flow in spray head central area, were improved reaction
The stability of gas flowing in chamber 800, reduces metal organic gas at tube wall 610 and the spray head center of exhaust duct 600
Deposition.
The reacting gas of four inlet chambers 301,302,303 and 304 in addition to combinations of the above, also other gases
Combination can equally reach the effect of above-described embodiment.Table 2 lists some feasible reacting gas combinations.
.
Embodiment 3：
As shown in Figure 6 and Figure 7, the structure of embodiment 3 is essentially identical with the structure of embodiment 1, and difference is：
Inlet plenum 1 is separated into three inlet chambers 301,302 and 303, and three by two vertical hexagon dividing walls 201 and 202
The air induction conduit 401,402 and 403 of individual inlet chamber is uniformly distributed in corresponding inlet chamber 301,302 and 303 respectively, in positive six
Side shape single-turn or multi-turn arrangement.
In the present embodiment, three inlet chambers are followed successively by from outside to inside and transport the inlet chamber 302 of second gas, transport the first gas
The inlet chamber 301 of body and the inlet chamber 303 for transporting third gas.The first gas are metal organic gas, or metal has
Machine gas and the mixed gas of carrier gas；The second gas are hydride gas, or the gaseous mixture of hydride gas and carrier gas
Body；The third gas are carrier gas, including one or more in nitrogen, hydrogen and noble gases.
The reacting gas of three inlet chambers 301,302 and 303 in addition to combinations of the above, also other combination of gases
The effect of above-described embodiment can equally be reached.Table 3 lists some feasible reacting gas combinations.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, without departing from this
In the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
The scope of restriction is defined.
Claims (7)
1. a kind of spray head for MOCVD device, including for receiving the inlet plenum of reacting gas, inlet plenum is one by pushing up
The hollow cylinder that plate, lateral wall, medial wall and base plate are constituted, is sequentially provided with cooling chamber and reaction chamber below inlet plenum,
It is characterized in that：Air induction conduit is provided with the base plate of inlet plenum, the center of the top board above the inlet plenum is provided with exhaust duct,
Air induction conduit is passed down through the cooling chamber below inlet plenum and is connected with reaction chamber, and the reacting gas in air inlet room is passed through reaction
In chamber, outside air inlet room, the lower end of exhaust duct sequentially passes through downwards top board, base plate, cooling chamber to the upper end open of exhaust duct
It is connected with reaction chamber afterwards, the reacting gas in air inlet room is sprayed in reaction chamber from the top down through air induction conduit, in reaction chamber
Tail gas is extracted out from bottom to top through exhaust duct, reacts the gas of intracavity radially from outer lateral center flow.
2. the spray head for MOCVD device according to claim 1, it is characterised in that：Exhaust duct has a face
To the lower surface of reaction chamber, cooling chamber has a lower surface towards reaction chamber, the lower surface of exhaust duct and cooling chamber
There is different distances, the distance to be more than or equal to zero, less than the base in the lower surface and reaction chamber of cooling chamber between lower surface
The distance between seat.
3. the spray head for MOCVD device according to claim 1, it is characterised in that：1--7 is provided with air inlet room
Inlet plenum is separated into the 2--8 inlet chamber being mutually isolated by individual vertical dividing wall, dividing wall, in the top board of each inlet chamber
Respective air inlet is provided with to receive reacting gas on upper or side wall, be provided with the base plate of each inlet chamber respective enter
The reacting gas of corresponding air inlet intracavity is sprayed into reaction chamber by airway, air induction conduit from the top down.
4. the spray head for MOCVD device according to claim 3, it is characterised in that：2--3 is provided with air inlet room
Inlet plenum is separated into the 3--4 inlet chamber being mutually isolated by individual vertical dividing wall, dividing wall.
5. the spray head for MOCVD device according to claim 3, it is characterised in that：Vertical dividing wall is circular
Or polygon, or combinations thereof.
6. the spray head for MOCVD device according to claim 3, it is characterised in that：Multiple air inlets being mutually isolated
Chamber includes：1 to 7 inlet chambers for transporting first gas, 1 to 7 inlet chambers for transporting second gas, 0 to 6 transport the 3rd gas
The inlet chamber of body；Multiple inlet chambers being mutually isolated optionally transport first gas, second gas or third gas, from
And carry out permutation and combination.
7. the spray head for MOCVD device according to claim 6, it is characterised in that：The first gas are metal
Organic gas, or the mixed gas of metal organic gas and carrier gas；The second gas are hydride gas, or hydride
Gas and the mixed gas of carrier gas；The third gas are carrier gas, including one kind in nitrogen, hydrogen and noble gases or many
Kind.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107502872A (en) * | 2017-08-24 | 2017-12-22 | 新乡市巨能合成材料有限公司 | A kind of metal organic chemical vapor deposition reactor spray equipment |
| CN110512192A (en) * | 2019-09-20 | 2019-11-29 | 深圳第三代半导体研究院 | A kind of chemical vapor deposition planet pallet device and air inlet method |
| CN112695302A (en) * | 2019-10-22 | 2021-04-23 | 中微半导体设备(上海)股份有限公司 | MOCVD reactor |
| CN113549900A (en) * | 2021-07-22 | 2021-10-26 | 东北大学 | Spraying plate structure of MOCVD equipment |
| CN114059164A (en) * | 2022-01-06 | 2022-02-18 | 芯三代半导体科技(苏州)有限公司 | Silicon carbide epitaxial growth device |
| CN115011948A (en) * | 2022-08-05 | 2022-09-06 | 拓荆科技(北京)有限公司 | Device for improving granularity of thin film and gas conveying method thereof |
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| CN107502872A (en) * | 2017-08-24 | 2017-12-22 | 新乡市巨能合成材料有限公司 | A kind of metal organic chemical vapor deposition reactor spray equipment |
| CN107502872B (en) * | 2017-08-24 | 2019-08-16 | 新乡市巨能合成材料有限公司 | A kind of metal organic chemical vapor deposition reactor spray equipment |
| CN110512192A (en) * | 2019-09-20 | 2019-11-29 | 深圳第三代半导体研究院 | A kind of chemical vapor deposition planet pallet device and air inlet method |
| CN112695302A (en) * | 2019-10-22 | 2021-04-23 | 中微半导体设备(上海)股份有限公司 | MOCVD reactor |
| CN112695302B (en) * | 2019-10-22 | 2023-05-30 | 中微半导体设备(上海)股份有限公司 | MOCVD reactor |
| CN113549900A (en) * | 2021-07-22 | 2021-10-26 | 东北大学 | Spraying plate structure of MOCVD equipment |
| CN114059164A (en) * | 2022-01-06 | 2022-02-18 | 芯三代半导体科技(苏州)有限公司 | Silicon carbide epitaxial growth device |
| CN114059164B (en) * | 2022-01-06 | 2022-11-04 | 芯三代半导体科技(苏州)有限公司 | Silicon carbide epitaxial growth device |
| CN115011948A (en) * | 2022-08-05 | 2022-09-06 | 拓荆科技(北京)有限公司 | Device for improving granularity of thin film and gas conveying method thereof |
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