CN102226831B - Chip testing method and testing circuit of lithium battery protective chip - Google Patents
Chip testing method and testing circuit of lithium battery protective chip Download PDFInfo
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- CN102226831B CN102226831B CN 201110073583 CN201110073583A CN102226831B CN 102226831 B CN102226831 B CN 102226831B CN 201110073583 CN201110073583 CN 201110073583 CN 201110073583 A CN201110073583 A CN 201110073583A CN 102226831 B CN102226831 B CN 102226831B
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Abstract
The invention relates to a chip testing method and a testing circuit of a lithium battery protective chip. The chip has a ground pin. Besides, the chip comprises a first chip unit and a second chip unit. The first chip unit is connected with the ground pin, and the second chip unit is not connected with the ground pin. The chip testing method comprises the following step that: the ground pin is hung in the air; and the second chip unit is tested by employing a common ground source testing apparatus. According to the chip testing method, the second chip unit can be tested by employing the common ground source testing apparatus, so that the testing cost of the chip is reduced and the test of the chip is simple and is easy to realize. Moreover, the testing circuit of the lithium battery protective chip is simple and is easy to realize, so that the testing cost can be reduced.
Description
Technical field
The present invention relates to the chip testing field, particularly the test circuit of a kind of chip detecting method and li-ion cell protection chip.
Background technology
Along with the development of IC industry, integrated circuit tested also seem more and more important.Special test equipment and universal test instrument are generally adopted in the test of integrated circuit for now.Because problems such as the construction cycle of the limitation of special test equipment, nonstandard parasexuality and special-purpose survey instrument is long make the use of special test equipment be subjected to bigger restriction.Universal test instrument (ATE:Automatic test equipment) is then with its versatility, standard, convenience and the open main flow that becomes the integrated circuit testing industry rapidly.
In ATE cheaply, no matter be import or homemade, as the ASL1000 of LTX-CREDENCE and the STS8107 test machine of ACCOTEST, generally speaking its DC proving installation mainly is exactly voltage/current (V/I) source, and major part all is operated in common ground mode.So-called ground mode altogether refers to test source or its Voltage Reference current potential of chip under test with respect to the earth, and the backflow point of circuit also is the earth.For most single chip because its Voltage Reference current potential all for the earth, therefore adopts altogether the source proving installation just can test it, and employing altogether the source proving installation test, testing cost is low.
Yet; present integrated circuit (IC) major part can only not formed by a chip encapsulation; for example: for the li-ion cell protection IC of " unification of two cores "; its inside discharges and recharges the control chip except comprising; also comprised 2 mos field effect transistor (MOSFET; Metal-Oxide-Semiconductor Field-Effect Transistor) is integrated in a chip; if still adopting altogether the source proving installation this moment tests the MOSFET chip of IC inside; can cause can't the test MOS fet chip some parameter, as the source-drain electrode voltage breakdown; drain saturation current etc.If adopt the proving installation test of source, floating ground, can cause the increase of testing cost again.And for other the chip of " unification of two cores ", when the reference potential in encapsulation loop, chip place within it be ground, when namely the circuit at its place is for floating ground circuit, can't directly use source, common ground proving installation to test the correlation parameter of described chip.
Publication number is the method for testing that the Chinese patent application of 101750580A discloses functional module chip in a kind of integrated circuit, but does not relate to for the problems referred to above.
Summary of the invention
The present invention solves is prior art chips circuit during for floating ground circuit, the problem that can't test described chip with source proving installation altogether.
For addressing the above problem, the invention provides a kind of chip detecting method, described chip pin comprises the ground pin, described chip comprises first chip unit and second chip unit, described first chip unit is connected with described ground pin, described second chip unit is not connected with described ground pin, and described chip detecting method comprises the steps:
Make described ground pin unsettled earlier;
Adopt altogether the source proving installation that described second chip unit is tested again.
Optionally, described employing altogether the source proving installation described second chip unit tested comprised the current potential that corresponding chip pin is set according to the parameter to be measured of described second chip unit.
Optionally, described chip is the li-ion cell protection chip, and described chip pin also comprises power pin, detects current/voltage input pin, public drain electrode pin and power cathode/load input pin,
Described first chip unit comprises and discharges and recharges control chip, and described second chip unit comprises metal-oxide-semiconductor,
Wherein, described discharge and recharge control chip and described power pin, pin, detect the current/voltage input pin and link to each other, the described control chip that discharges and recharges comprises the charge switch control end; The grid of described metal-oxide-semiconductor is connected with the described charge switch control end that discharges and recharges control chip, and drain electrode is connected with the public drain electrode pin, and source electrode is connected with power cathode/load input pin.
Optionally, adopting source proving installation altogether that described metal-oxide-semiconductor is tested comprises: adopt source proving installation altogether to test source-drain electrode voltage breakdown or the drain saturation current of described metal-oxide-semiconductor.
Optionally; the described employing source proving installation source-drain electrode voltage breakdown of testing described metal-oxide-semiconductor altogether comprises: with the power pin of described li-ion cell protection chip, detect the current/voltage input pin and the ground pin links to each other and the unsettled or zero setting with described power pin; with power cathode/load input pin ground connection, provide electric current to test the source-drain electrode voltage breakdown of described metal-oxide-semiconductor by source proving installation altogether to the public drain electrode pin.
Optionally; the described employing source proving installation drain saturation current of testing described metal-oxide-semiconductor altogether comprises: with the power pin of described li-ion cell protection chip, detect the current/voltage input pin and the ground pin links to each other and the unsettled or zero setting with described power pin; with power cathode/load input pin ground connection, provide voltage to test the drain saturation current of described metal-oxide-semiconductor by source proving installation altogether to the public drain electrode pin.
Compared with prior art, the said chip method of testing has the following advantages:
By earlier unsettled first chip unit altogether that makes of the ground pin of chip being quit work, reduced in the test process first chip unit to a great extent to the influence of second chip unit, can adopt source, common ground proving installation that second chip unit on floating ground is tested then, need not increases source, floating ground proving installation on the basis of existing universal test instrument, has reduced the cost of chip testing.
Under the unsettled prerequisite of the ground of chip pin, adopt when the source proving installation is tested second chip unit altogether, the current potential that the respective pin of described chip only need be set is finished the test to the second chip unit parameter, and method is simple, realizes easily.
For addressing the above problem; the present invention also provides a kind of test circuit of li-ion cell protection chip; the pin of described li-ion cell protection chip comprise power pin, pin, detect current/voltage input pin, power cathode/load input pin, public drain electrode pin; described test circuit comprises first switch element, second switch unit, the 3rd switch element, the 4th switch element, first source proving installation altogether; wherein
Described ground pin is connected with the earth by first switch element, is connected with described power pin by the 3rd switch element, and is connected with described detection current/voltage input pin by the 3rd switch element, the 4th switch element;
Described power pin is unsettled;
Described power cathode/load input pin is connected with the earth by the second switch unit;
Described public drain electrode pin with first altogether the source proving installation be connected.
Optionally, described first altogether the source proving installation be suitable for providing curtage to the public drain electrode pin.
For addressing the above problem; the present invention also provides a kind of test circuit of li-ion cell protection chip; the pin of described li-ion cell protection chip comprise power pin, pin, detect current/voltage input pin, power cathode/load input pin, public drain electrode pin; described test circuit comprises first switch element, second switch unit, the 3rd switch element, the 4th switch element, first source proving installation and second source proving installation altogether altogether; wherein
Described ground pin is connected with the earth by first switch element, is connected with described power pin by the 3rd switch element, and is connected with described detection current/voltage input pin by the 3rd switch element, the 4th switch element;
Described power pin with described second altogether the source proving installation be connected, described second altogether the source proving installation be suitable for providing 0V voltage to described power pin;
Described power cathode/load input pin is connected with the earth by the second switch unit;
Described public drain electrode pin with first altogether the source proving installation be connected.
Optionally, described first altogether the source proving installation be suitable for providing curtage to the public drain electrode pin.
Compared with prior art, the test circuit of above-mentioned li-ion cell protection chip has the following advantages:
Can be earlier by first switch element with the ground pin of li-ion cell protection chip and the earth disconnect be connected so that altogether discharge and recharge control chip and discharge switch quits work; reduced thus when the charge switch on floating ground is tested; discharge and recharge control chip and discharge switch to the influence of charge switch; by making the unsettled or zero setting of lithium battery power pin; and adopt first altogether the source proving installation provide curtage to realize parameter testing to charge switch to the public drain electrode pin of li-ion cell protection chip; reduced testing cost, and test circuit is easy to simply realize.
Description of drawings
Fig. 1 is the schematic diagram of li-ion cell protection chip;
Fig. 2 is the chip detecting method process flow diagram of embodiment of the present invention;
Fig. 3 is the test circuit figure of the li-ion cell protection chip of the embodiment of the invention one;
Fig. 4 is the test flow chart of the li-ion cell protection chip of the embodiment of the invention one;
Fig. 5 is the chip test circuit figure of the embodiment of the invention two " unification of two cores ".
Embodiment
At present ATE is just with its versatility, standard, convenience and the open main flow that becomes the integrated circuit testing industry gradually.Generally speaking, the DC proving installation of ATE mostly is operated in common ground mode, is source, common ground proving installation.Therefore, when running into loop, chip to be measured place for floating ground circuit, just can't directly adopt source, common ground proving installation that the correlation parameter of described chip to be measured is tested, if adopt source, floating ground proving installation that described chip to be measured is tested, can cause the increase of whole testing cost again.
Along with the fast development of IC industry, increasing IC is only formed by single chip encapsulation, is generally all formed by two even the encapsulation of more chip.For instance: at present for the li-ion cell protection chip; scheme that 2 chips are packaged together occurred, i.e. " unification of two cores " will discharge and recharge control chip and switching tube chip stack encapsulation; to improve integrated level, dwindle package dimension and whole li-ion cell protection area of chip.
Fig. 1 is the schematic diagram of li-ion cell protection chip; as shown in Figure 1, the pin of described li-ion cell protection chip comprises: power pin VCC, pin GND, detect current/voltage input pin CS, public drain electrode pin D12 and power cathode/load input pin BATT-.
Described li-ion cell protection chip comprises and discharges and recharges control chip 1, discharge switch M1 and charge switch M2 that discharge switch M1 and charge switch M2 are transistor, can be integrated in the same chip, also can be respectively a chip.
The described control chip 1 that discharges and recharges comprises: the detecting unit 10 that overcharges, overdischarge detecting unit 11, concussion control circuit 12, short-circuit detecting unit 13, excessive current detection unit 14, charged state detecting unit 15, the first steering logic unit 16, the second steering logic unit 17, discharge switch control end OD, charge switch control end OC, power input (unmarked among the figure), earth terminal (unmarked among the figure), described power input is connected with described power pin VCC, and described earth terminal is connected with described ground pin GND.
The grid of described discharge switch M1 is connected with described discharge switch control end OD, and drain electrode is connected with described public drain electrode pin D12, source electrode is connected with described ground pin GND.
The grid of described charge switch M2 is connected with described charge switch control end OC, and drain electrode is connected with described public drain electrode pin D12, source electrode is connected with described power cathode/load input pin BATT-.
The described control chip 1 that discharges and recharges is responsible for monitoring cell voltage and loop current; and the grid of control discharge switch M1 and charge switch M2; discharge switch M1, charge switch M2 are controlling conducting and the shutoff of discharge loop and charge circuit respectively, below briefly introduce the principle of work of li-ion cell protection chip:
The output terminal of the second steering logic unit 17 under the normal condition, the output voltage that is discharge switch control end OD and charge switch control end OC is high level, discharge switch M1 and charge switch M2 all are in conducting state, and battery can freely charge and discharge.
In the battery charging process; (this value determined by discharging and recharging control chip 1 when control chip 1 detected cell voltage and reaches a certain particular value when discharging and recharging; the different control chips that discharge and recharge have different values); the voltage of the charge switch control end OC output of the second steering logic unit 17 can change low level into by high level; make charge switch M2 transfer shutoff to by conducting; thereby the cut-out charge circuit makes charger to charge to battery again, plays the additives for overcharge protection effect.
In the battery discharge procedure; detect cell voltage and be lower than a certain particular value (this value determines by discharging and recharging control chip 1 constantly when discharging and recharging control chip 1; the different control chips that discharge and recharge have different values); the voltage of the discharge switch control end OD output of the second steering logic unit 17 can change low level into by high level; make discharge switch M1 transfer shutoff to by conducting; thereby the cut-out discharge loop makes battery to discharge to load again, plays the over effect.
Other see also the databook of li-ion cell protection chip about the overcurrent protection of li-ion cell protection chips and the principle of work of short-circuit protection, repeat no more herein.
The inventor finds; for above-mentioned li-ion cell protection chip; its loop that discharges and recharges control chip 1 and discharge switch M1 place all links to each other (linking to each other with the earth) with ground pin GND; be that the loop, place is common-base circuit; when therefore the correlation parameter that discharges and recharges control chip 1 and discharge switch M1 being tested, can adopt source, the common ground proving installation among the ATE to test accordingly.But for charge switch M2, because its loop, place does not link to each other with ground pin GND, be that the loop, place is floating ground circuit, if its correlation parameter is tested, need to adopt source, floating ground proving installation that it is tested, yet for most ATE, its inside with the DC proving installation be source, common ground proving installation, this moment is if adopt source, floating ground proving installation to test the increase that can cause testing cost.
So whether the inventor considers, can adopt simple method of testing and test circuit to test the correlation parameter of chip to be measured under the situation that does not increase testing cost.Therefore, the inventor proposes, and when chip to be measured is tested, should reduce not tested chip to the influence of chip to be measured as far as possible, and uses altogether that the source proving installation comes the correlation parameter of chip to be measured is tested.
See also Fig. 2, Fig. 2 is the chip detecting method process flow diagram of embodiment of the present invention, described chip pin comprises the ground pin, described chip comprises first chip unit and second chip unit, described first chip unit is connected with described ground pin, described second chip unit is not connected with described ground pin, and described chip detecting method comprises the steps:
S101: make described ground pin unsettled earlier.
S102: adopt altogether the source proving installation that described second chip unit is tested again.
Embodiment one
For technical scheme of the present invention can better be described, existing in conjunction with li-ion cell protection chip shown in Figure 1 schematic diagram and the chip detecting method of the embodiment of the present invention of test circuit figure of li-ion cell protection chip shown in Figure 3 be described in detail.Also in the present embodiment namely, described chip is the li-ion cell protection chip, and described first chip unit comprises and discharge and recharge control chip 1 and discharge switch M1 that described second chip unit comprises charge switch M2.And described first chip unit can comprise a plurality of chips that link to each other with the ground pin in other embodiments, and the circuit that also is the described first chip unit place is common-base circuit; Described second chip unit can comprise a plurality of and the disjunct chip of ground pin, also is that the circuit at the described second chip unit place is floating ground circuit.
Being example with the test to the source-drain electrode voltage breakdown (BVDSS) of charge switch M2 or drain saturation current (IDSS) parameter in the present embodiment is described in detail the chip detecting method of embodiment of the present invention.
See also Fig. 3; Fig. 3 is the test circuit figure of the li-ion cell protection chip of the embodiment of the invention; as shown in Figure 3, the pin of described li-ion cell protection chip 2 comprises: power pin VCC, pin GND, detect current/voltage input pin CS, power cathode/load input pin BATT-, public drain electrode pin D12.
In conjunction with Fig. 2 and Fig. 3, carry out S101: make described ground pin GND unsettled earlier.
Described in the present embodiment pin GND be connected with the earth by first switch element 10, particularly, described first switch element 10 comprises relay K 1_1 and the K1_2 of dpdt double-pole double-throw (DPDT), wherein, first end of relay K 1_1 links to each other with ground pin GND, second end is unsettled, and the 3rd end ground end GND_S of source proving installation together links to each other; First end of relay K 1_2 links to each other with ground pin GND, and second end is unsettled, and the 3rd end ground end GND_F of source proving installation together links to each other.The 3rd end of relay K 1_1 and the 3rd end of K1_2 be the ground end GND_S of the source proving installation accuracy that is connected to guarantee to test big current parameters with GND_F together respectively, and wherein F represents FORCE (applying), and S represents SENSE (detection).Adopt this connected mode can be used for the parameter testing of present embodiment charge switch M2 on the one hand in the present embodiment, above-mentioned connected mode can also be used for the test of other big current parameters on the other hand, as: conducting resistance RDSON.Described first switch element 10 also can comprise the relay of two single-pole single-throw (SPST)s in other embodiments, and the relay of described two single-pole single-throw (SPST)s connects ground end GND_S and the GND_F of source, common ground proving installation respectively.
Generally first end of relay K 1_1 and K1_2 links to each other with the 3rd end, be in the state that described ground pin GND is communicated with ground end GND_S and GND_F, it also is ground state, test for BVDSS or IDSS to charge switch M2 in the present embodiment, at first need to make described ground pin GND unsettled, be about to the relay K 1_1 of dpdt double-pole double-throw (DPDT) and first end of K1_2 and link to each other with second end, make that ground pin GND is unsettled.
As shown in Figure 1, first chip unit comprises and discharges and recharges control chip 1 and discharge switch M1 in the present embodiment, the two all links to each other with ground pin GND, in order to reduce when the BVDSS of charge switch M2 or IDSS are tested, discharge and recharge control chip 1 and discharge switch M1 to its influence, adopting first end with the relay K 1_1 of dpdt double-pole double-throw (DPDT) and K1_2 to link to each other with second end can be so that discharges and recharges control chip 1 and discharge switch M1 quits work with pin GND vacantly.And, by also knowing among Fig. 1, when discharging and recharging control chip 1 and discharge switch M1 work, want the correlation parameter of charge switch M2 is tested, can only test by source, floating ground proving installation, this is because if want to test by source proving installation altogether the BVDSS of charge switch M2, can be at V
GSIrritate the BVDSS that electric current is tested M2 to public drain electrode pin D12 under=0 the prerequisite, because discharge switch M1 is ground connection also, or actually therefore can't know the BVDSS of electric discharge switch M1 charge switch M2, so generally can only adopt source, floating ground proving installation to test the BVDSS of charge switch M2, cause the testing cost height.
Continuation is in conjunction with Fig. 2 and Fig. 3, carries out S102: adopt altogether the source proving installation that described second chip unit is tested again.
BVDSS to the MOSFET pipe tests, be exactly at V
GS=0, I
DUnder the situation for certain value, test source leaks the voltage at two ends.And test for the IDSS of MOSFET pipe, then be at V
GS=0, the situation that applies certain magnitude of voltage between the source-drain electrode test I DSS that gets off.By the databook of li-ion cell protection chip I as can be known
D=250 μ A, the magnitude of voltage that applies between the source-drain electrode are 16V.
In the present embodiment, in order to make the V of charge switch M2
GS=0, described ground pin GND is connected with described power pin VCC by the 3rd switch element 30, be connected with described detection current/voltage input pin CS and described power pin VCC is unsettled by the 3rd switch element 30, the 4th switch element 40, make described ground pin GND, power pin VCC and to detect the current potential of current/voltage input pin CS identical.Particularly, described the 3rd switch element 30, the 4th switch element 40 can be respectively relay K 3, the K4 of single-pole single-throw (SPST).Described ground pin GND is connected with described power pin VCC by relay K 3, by relay K 3 be connected with described detection current/voltage input pin CS with K4 and described power pin VCC unsettled.Need to prove that among Fig. 3, power pin VCC also is connected with ground by capacitor C 1, is mainly used in the noise in the filter out power, thereby does not influence the vacant state of power pin VCC.
Generally relay K 3, K4 are in opening, in the process of test charge switch M2, closing relay K3, K4, because relay K 3, K4 closure and power pin VCC are unsettled, old place pin GND, power pin VCC and the current potential that detects current/voltage input pin CS are evened up, and then make V
GS=0.
See also Fig. 1, the source electrode of charge switch M2 is connected with described power cathode/load input pin BATT-as shown in Figure 1, in the present embodiment in order to adopt source, common ground proving installation that BVDSS or the IDSS of described charge switch M2 tested, so described power cathode/load input pin BATT-is connected with the earth by second switch unit 20.
Particularly, described second switch unit 20 comprises relay K 2_1 and the K2_2 of single-pole single-throw (SPST), described power cathode/load input pin BATT-by relay K 2_1 and K2_2 respectively together the ground end GND_S of source proving installation be connected with GND_F.Generally, relay K 2_1 and K2_2 are in opening, also namely disconnect being connected between described power cathode/load input pin BATT-and the ground, in the process of test charge switch M2, closing relay K2_1 with K2_2 so that power cathode/load input pin BATT-is connected with ground.
In addition; power cathode described in the test process/load input pin BATT-also need be by resistance R 1 (usually resistance be 1K Ω) and dpdt double-pole double-throw (DPDT) relay K 5 with detect current/voltage input pin CS and link to each other, and relay K 5 is in closure state and namely makes and be communicated with between power cathode/load input pin BATT-and the detection current/voltage input pin CS (can referring to the databook of li-ion cell protection chip).
In the present embodiment, by with described public drain electrode pin D12 with first altogether source proving installation 101 be connected, namely by first altogether source proving installation 101 provide electric current I to public drain electrode pin D12
DDescribed first altogether source proving installation 101 can be multichannel current/voltage source, be two road electric current and voltage source DVI (DVI in the present embodiment, dual chunnel V/I source), the first via passage DVI1 by DVI provides the BVDSS of the electric current of 250 μ A with test charge switch M2 in the actual test process to public drain electrode pin D12.
Also namely in actual test process, first end of relay K 1_1 and K1_2 is linked to each other with second end, make that described ground pin GND is unsettled, closing relay K2_1, K2_2, K3, K4, by first altogether source proving installation DVI1 provide the electric current of 250 μ A can test the BVDSS of charge switch M2.
Need to prove, in other embodiments, described power pin VCC also can with second altogether test source device 102 be connected (referring to dotted portion shown in Figure 3) to provide 0V voltage to power pin VCC.Described second altogether source proving installation 102 can be the plurality of voltages current source, as be eight road electric current and voltage source OVI (OVI, octad chunnel V/I source), the 0th paths OVI0 of power pin VCC and OVI can be connected in the actual test process, particularly, described power pin VCC with second altogether the OVI0_S of source proving installation OVI be connected, described OVI0_S is connected by the OVI0_F of resistance R 2 and OVI.Herein, between power pin VCC and OVI0_F series resistor R2 for the protection of the li-ion cell protection chip.Therefore, OVI0_S and the OVI0_F of source proving installation 102 provide 0V voltage to power pin VCC altogether by closing relay K3, K4 and by second, so that ground pin GND, power pin VCC and the voltage that detects current/voltage input pin CS are 0V, and then make V
GS=0.
Similarly, the IDSS that can also test charge switch M2 in conjunction with test circuit figure and the chip detecting method among Fig. 2 of the li-ion cell protection chip shown in Fig. 3.Namely can link to each other with second end by first end with relay K 1_1 and K1_2 and make that the ground pin is unsettled, closing relay K2_1, K2_2, K3, K4, power pin VCC is unsettled, and by first altogether source proving installation DVI1 be connected to provide the voltage of 16V to test the IDSS of charge switch M2 with described public drain electrode pin D12.Perhaps, also can link to each other with second end by first end with relay K 1_1 and K1_2 and make that the ground pin is unsettled, closing relay K2_1, K2_2, K3, K4, and by second altogether OVI0_S, the OVI_F of source proving installation OVI 0V is provided voltage for power pin VCC, and by first altogether source proving installation DVI1 be connected to provide the voltage of 16V to test the IDSS of charge switch M2 with described public drain electrode pin D12.
So far, namely can BVDSS and the IDSS of above-mentioned charge switch M2 be tested by the test circuit figure of li-ion cell protection chip shown in Figure 3 and chip detecting method shown in Figure 2, saved testing cost, and above-mentioned test circuit is simple, be easy to realize.
See also Fig. 4, Fig. 4 is the test flow chart of the li-ion cell protection chip of present embodiment, carries out brief description below in conjunction with Fig. 3 and the BVDSS of the present embodiment charge switch of Fig. 4 M2 and the actual test process of IDSS.Described test process comprises the steps:
S11: pin GND is unsettled with ground, ground pin GND is connected with power pin VCC and detection current/voltage input pin CS, with power cathode/load input pin BATT-ground connection.
Particularly, first first end with relay K 1_1 and K1_2 links to each other with second end and makes that the ground pin is unsettled, closing relay K2_1, K2_2 make power cathode/load input pin BATT-ground connection, closing relay K3 and K4 make that ground pin GND, power pin VCC are identical with the current potential that detects current/voltage input pin CS and then make V
GS=0.
S12: make the I of charge switch M2
DBe 250 μ A, the BVDSS of test charge switch M2.
Particularly, utilize first altogether source proving installation DVI1 give electric current that public drain electrode pin D12 the irritates 250 μ A BVDSS with test charge switch M2.
S13: if test result is judged as FAIL, stop test.
In the present embodiment, the minimum BVDSS of its charge switch M2 is 22.2V for the li-ion cell protection chip, if the BVDSS that the process test obtains then stops test less than 22.2V.
S14: with first altogether source proving installation DVI1 be reset to 0V, the preparation switching range.
In general, when the source proving installation resets to 0V altogether, the electric current of its output and voltage all are 0V, but since above-mentioned test process in be by first altogether the DVI1 of source proving installation constant electric current is provided, so first altogether source proving installation DVI1 still be in the constant current test pattern, therefore, reply first altogether the range of source proving installation DVI1 switch and make it be in the constant voltage test pattern.
S15: make the V of charge switch M2
DS=16V, the IDSS of test charge switch M2.
Particularly, utilize first the IDSS of 16V voltage with test charge switch M2 is provided between the source electrode of proving installation DVI1 in source to public drain electrode pin D12 and charge switch M2 altogether.
S16: if test result is judged as FAIL, stop test.
In the present embodiment, the maximum IDSS of its charge switch M2 is 0.9 μ A for the li-ion cell protection chip, if the IDSS that the process test obtains then stops test greater than 0.9 μ A.
S17: with first altogether source proving installation DVI1 be reset to 0V, the preparation switching range.
S18: first end of relay K 1_1, K1_2 linked to each other with the 3rd end resets li-ion cell protection chip ground pin GND current potential.
Need to prove; chip detecting method provided by the invention not only is confined to the test of charge switch M2 in the above-mentioned li-ion cell protection chip; for with the similarly test of the chip of other " unification of two cores " of li-ion cell protection chip; all can adopt method of testing of the present invention; and when adopting altogether the source proving installation pair to test with the correlation parameter of the disjunct chip to be measured of ground pin at concrete chip, should change the current potential of the respective pin of described chip according to measured parameter.
In addition; in the present embodiment if need be to discharging and recharging control chip 1 and discharge switch M1 tests; then need first end of relay K 11 and K12 is linked to each other with the 3rd end; make and describedly discharge and recharge control chip 1 and discharge switch M1 links to each other with ground; and at the current potential of each pin of parameter change li-ion cell protection chip that will test, adopt altogether the source proving installation that correlation parameter is tested and get final product.
Embodiment two
For chip detecting method of the present invention is had more deep understanding, present embodiment with inside integrated the chip unit of 2 kinds of difference in functionalitys: to be example describe the chip detecting method of embodiment of the present invention the chip of LED DRIVER and adjustable voltage stabilizer.
See also Fig. 5, Fig. 5 is the measurement circuit figure of present embodiment " unification of two cores " chip, and described chip is the DFN10 encapsulation.Wherein, power pin VCC is the public power pin of LED DRIVER and adjustable voltage stabilizer; Ground pin GND is the lower margin of LED DRIVER; Pin D1, D2, D3 and ISET are the function pins of LED DRIVER; Pin ENABLE is used for controlling simultaneously the work of LED DRIVER and adjustable voltage stabilizer; Pin VOUT and ADJ are the function pin of adjustable voltage stabilizer.
Usually in order accurately to test the electric current I ADJ of the zero potential of pin ADJ of adjustable voltage stabilizer, can between power pin VCC and pin VOUT, one of cross-over connection float source, ground proving installation, be source, floating ground shown in dotted lines in Figure 5 proving installation DVI1_H and DVI1_L, set by source, described floating ground proving installation DVI1_H and DVI1_L and extract electric current floatingly; Then ground pin GND is connected with the earth by relay K 1; DVI0 with source proving installation DVI altogether puts a supply voltage altogether for power pin VCC, and guarantee clamp current can not be too big (too conference influences the value of IADJ), offer common ground supply voltage same big with power pin VCC of pin ENABLE with the DVI5 of source proving installation DVI altogether (among the figure shown in the dotted line), make adjustable voltage stabilizer work; Using altogether at last, the DVI2 of source proving installation DVI offers the common ground supply voltage of pin ADJ 0V with test I ADJ.
Yet, it is higher to adopt source, floating ground proving installation that the correlation parameter of chip is carried out testing cost, and from the above, test source among the ATE is most of is source proving installation altogether can adopt the chip detecting method of embodiment of the present invention that IADJ is tested at this moment.First chip unit is LEDDRIVER in the present embodiment, and it is connected with ground pin GND, and second chip unit is adjustable voltage stabilizer, and it is not connected with the ground pin.
At first make ground pin GND unsettled, make LED DRIVER quit work, to reduce the influence of the adjustable voltage stabilizer of LEDDRIVER.
Then, adopt source proving installation altogether that the IADJ of adjustable voltage stabilizer is tested accordingly again.In the present embodiment, power pin VCC is connected (no longer needing this moment source, common ground proving installation DVI5 source, common ground voltage to be provided for pin ENABLE) with pin ENABLE by relay K 2, the current potential of these two pins is evened up, utilizing altogether, the DVI0 of source proving installation DVI provides a supply voltage altogether for power pin VCC, so that adjustable voltage stabilizer work, because pin GND is unsettled on ground, electric current is from ground pin GND bypass when also having avoided extracting big electric current commonly, arranges with the DVI1 of source proving installation DVI altogether at pin VOUT end then and extracts electric current commonly; Using altogether at last, the DVI2 of source proving installation DVI provides the common ground supply voltage of a 0V to test the electric current I ADJ of its pin ADJ for pin ADJ.
So far, by above-mentioned elder generation that ground pin GND is unsettled, and then namely can adopt source, common ground proving installation to come the parameter of adjustable voltage stabilizer is tested according to the current potential that the parameter to be measured of adjustable voltage stabilizer changes described chip respective pin.
In sum, the chip detecting method that present embodiment provides, by the unsettled chip unit of winning that makes of the ground pin of chip is quit work, reduced the influence of first chip unit to second chip unit to a great extent, only by changing the current potential of chip respective pin, employing source proving installation is altogether tested second chip unit, and method is simple, realizes easily.And adopt altogether the source proving installation that second chip unit is tested, need not increases new test source device to existing ATE, has reduced the cost of chip testing.
The test circuit of the li-ion cell protection chip that present embodiment provides can be earlier by first switch element with the ground pin of li-ion cell protection chip and the earth disconnect be connected so that altogether discharge and recharge control chip and discharge switch quits work; control chip and discharge switch have been reduced to the charge switch test on floating ground the time, to discharge and recharge thus to the influence of charge switch; can the unsettled or zero setting by the power pin that makes the li-ion cell protection chip; and by adopt first altogether the source proving installation provide curtage to realize parameter testing to charge switch to the public drain electrode pin of li-ion cell protection chip; reduced testing cost, and test circuit is easy to simply realize.
Though the present invention with preferred embodiment openly as above; but it is not to limit the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize method and the technology contents of above-mentioned announcement that technical solution of the present invention is made possible change and modification; therefore; every content that does not break away from technical solution of the present invention; to any simple modification, equivalent variations and modification that above embodiment does, all belong to the protection domain of technical solution of the present invention according to technical spirit of the present invention.
Claims (10)
1. chip detecting method, described chip pin comprises the ground pin, described chip comprises first chip unit and second chip unit, described first chip unit is connected with described ground pin, described second chip unit is not connected with described ground pin, it is characterized in that described chip detecting method comprises the steps:
Make described ground pin unsettled earlier;
Adopting altogether again, the source proving installation carries out the test of voltage, current parameters to described second chip unit.
2. chip detecting method as claimed in claim 1 is characterized in that, described employing source proving installation is altogether tested described second chip unit and comprised the current potential that corresponding chip pin is set according to the parameter to be measured of described second chip unit.
3. chip detecting method as claimed in claim 1 is characterized in that, described chip is the li-ion cell protection chip, and described chip pin also comprises power pin, detects current/voltage input pin, public drain electrode pin and power cathode/load input pin,
Described first chip unit comprises and discharges and recharges control chip, and described second chip unit comprises metal-oxide-semiconductor, wherein,
Described discharge and recharge control chip and described power pin, pin, detect the current/voltage input pin and link to each other, the described control chip that discharges and recharges comprises the charge switch control end; The grid of described metal-oxide-semiconductor is connected with the described charge switch control end that discharges and recharges control chip, and drain electrode is connected with the public drain electrode pin, and source electrode is connected with power cathode/load input pin.
4. chip detecting method as claimed in claim 3 is characterized in that, adopts source proving installation altogether that described metal-oxide-semiconductor is tested and comprises: adopt source proving installation altogether to test source-drain electrode voltage breakdown or the drain saturation current of described metal-oxide-semiconductor.
5. chip detecting method as claimed in claim 4; it is characterized in that; the described employing source proving installation source-drain electrode voltage breakdown of testing described metal-oxide-semiconductor altogether comprises: with the power pin of described li-ion cell protection chip, detect the current/voltage input pin and the ground pin links to each other and the unsettled or zero setting with described power pin; with power cathode/load input pin ground connection, provide electric current to test the source-drain electrode voltage breakdown of described metal-oxide-semiconductor by source proving installation altogether to the public drain electrode pin.
6. chip detecting method as claimed in claim 4; it is characterized in that; the described employing source proving installation drain saturation current of testing described metal-oxide-semiconductor altogether comprises: with the power pin of described li-ion cell protection chip, detect the current/voltage input pin and the ground pin links to each other and the unsettled or zero setting with described power pin; with power cathode/load input pin ground connection, provide voltage to test the drain saturation current of described metal-oxide-semiconductor by source proving installation altogether to the public drain electrode pin.
7. the test circuit of a li-ion cell protection chip; the pin of described li-ion cell protection chip comprise power pin, pin, detect current/voltage input pin, power cathode/load input pin, public drain electrode pin; it is characterized in that; described test circuit comprises first switch element, second switch unit, the 3rd switch element, the 4th switch element, first source proving installation altogether; wherein
Described ground pin is connected with the earth by first switch element, is connected with described power pin by the 3rd switch element, and is connected with described detection current/voltage input pin by the 3rd switch element, the 4th switch element;
Described power pin is unsettled;
Described power cathode/load input pin is connected with the earth by the second switch unit;
Described public drain electrode pin with first altogether the source proving installation be connected.
8. the test circuit of li-ion cell protection chip as claimed in claim 7 is characterized in that, described first altogether the source proving installation be suitable for providing curtage to the public drain electrode pin.
9. the test circuit of a li-ion cell protection chip; the pin of described li-ion cell protection chip comprise power pin, pin, detect current/voltage input pin, power cathode/load input pin, public drain electrode pin; it is characterized in that; described test circuit comprises first switch element, second switch unit, the 3rd switch element, the 4th switch element, first source proving installation and second source proving installation altogether altogether; wherein
Described ground pin is connected with the earth by first switch element, is connected with described power pin by the 3rd switch element, and is connected with described detection current/voltage input pin by the 3rd switch element, the 4th switch element;
Described power pin with described second altogether the source proving installation be connected, described second altogether the source proving installation be suitable for providing 0V voltage to described power pin;
Described power cathode/load input pin is connected with the earth by the second switch unit;
Described public drain electrode pin with first altogether the source proving installation be connected.
10. the test circuit of li-ion cell protection chip as claimed in claim 9 is characterized in that, described first altogether the source proving installation be suitable for providing curtage to the public drain electrode pin.
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| CN103197225B (en) * | 2012-01-06 | 2017-03-29 | 珠海天威技术开发有限公司 | The method of testing of monobus chip |
| TWI628448B (en) * | 2017-03-07 | 2018-07-01 | 慧榮科技股份有限公司 | Circuit test method |
| US10559954B2 (en) * | 2017-04-04 | 2020-02-11 | Semiconductor Components Industries, Llc | Methods and apparatus for voltage and current calibration |
| CN107807326B (en) * | 2017-10-31 | 2020-04-10 | 江苏友润微电子有限公司 | Test circuit and test method for SP8 packaged lithium battery charging device |
| CN108037436A (en) * | 2017-12-08 | 2018-05-15 | 贵州振华风光半导体有限公司 | A kind of method of heavy current pulse test |
| CN109239582B (en) * | 2018-10-19 | 2023-12-15 | 上海芯哲微电子科技股份有限公司 | Testing device for charging management integrated circuit |
| CN112578254A (en) * | 2020-12-08 | 2021-03-30 | 葛正宏 | double-MOS tube testing method |
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| CN101436774A (en) * | 2007-11-12 | 2009-05-20 | 深圳市比克电池有限公司 | Protective system for lithium ion battery |
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| CN200947542Y (en) * | 2006-09-15 | 2007-09-12 | 天津力神电池股份有限公司 | Overcharging, overdischarging protection voltage detection device for multi-string large lithium ion battery series |
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Address after: Jiangsu province Nantong City Chongchuan road 226006 No. 288 Patentee after: Tongfu Microelectronics Co., Ltd. Address before: 226006 Jiangsu Province, Nantong City Chongchuan District Chongchuan Road No. 288 Patentee before: Fujitsu Microelectronics Co., Ltd., Nantong |