CN102221416B - 抛光液物理参数测量装置、测量方法和化学机械抛光设备 - Google Patents
抛光液物理参数测量装置、测量方法和化学机械抛光设备 Download PDFInfo
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- CN102221416B CN102221416B CN201110058436A CN201110058436A CN102221416B CN 102221416 B CN102221416 B CN 102221416B CN 201110058436 A CN201110058436 A CN 201110058436A CN 201110058436 A CN201110058436 A CN 201110058436A CN 102221416 B CN102221416 B CN 102221416B
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- Prior art keywords
- polishing
- sensor
- polishing fluid
- measurement device
- transmitter
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- 238000005498 polishing Methods 0.000 title claims abstract description 265
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000012545 processing Methods 0.000 claims abstract description 20
- 239000012530 fluid Substances 0.000 claims description 119
- 238000005259 measurement Methods 0.000 claims description 73
- 238000003491 array Methods 0.000 claims description 18
- 239000002689 soil Substances 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000009826 distribution Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 4
- 238000005461 lubrication Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims (14)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110058436A CN102221416B (zh) | 2011-03-10 | 2011-03-10 | 抛光液物理参数测量装置、测量方法和化学机械抛光设备 |
PCT/CN2011/075422 WO2012119354A1 (zh) | 2011-03-10 | 2011-06-07 | 抛光液物理参数测量装置、测量方法和化学机械抛光设备 |
US13/387,941 US20120315826A1 (en) | 2011-03-10 | 2011-06-07 | Device and Method for Measuring Physical Parameters of Slurry and Chemical Mechanical Polishing Apparatus Comprising the Device |
TW100128834A TW201236813A (en) | 2011-03-10 | 2011-08-12 | Device and method for measuring physical parameters of polishing slurry and chemical mechanical polishing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110058436A CN102221416B (zh) | 2011-03-10 | 2011-03-10 | 抛光液物理参数测量装置、测量方法和化学机械抛光设备 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102221416A CN102221416A (zh) | 2011-10-19 |
CN102221416B true CN102221416B (zh) | 2012-10-10 |
Family
ID=44778031
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110058436A Active CN102221416B (zh) | 2011-03-10 | 2011-03-10 | 抛光液物理参数测量装置、测量方法和化学机械抛光设备 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20120315826A1 (zh) |
CN (1) | CN102221416B (zh) |
TW (1) | TW201236813A (zh) |
WO (1) | WO2012119354A1 (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102278967A (zh) * | 2011-03-10 | 2011-12-14 | 清华大学 | 抛光液厚度测量装置、测量方法和化学机械抛光设备 |
CN102615593A (zh) * | 2012-03-09 | 2012-08-01 | 中国科学院长春光学精密机械与物理研究所 | 一种光学加工磨头受力状态监测装置 |
CN103419121B (zh) * | 2013-08-09 | 2015-11-04 | 厦门大学 | 一种基于温度可监控的磁悬浮抛光装置 |
CN103406833B (zh) * | 2013-08-13 | 2016-08-10 | 南京航空航天大学 | 难加工材料成型磨削冷却状态监测装置 |
US9768080B2 (en) * | 2013-12-18 | 2017-09-19 | Taiwan Semiconductor Manufacturing Company Ltd | Semiconductor manufacturing apparatus and method thereof |
US10478937B2 (en) * | 2015-03-05 | 2019-11-19 | Applied Materials, Inc. | Acoustic emission monitoring and endpoint for chemical mechanical polishing |
CN104897296A (zh) * | 2015-06-13 | 2015-09-09 | 广东工业大学 | 化学机械抛光过程中抛光界面的温度检测装置及温度信号的利用 |
JP6771216B2 (ja) * | 2016-10-07 | 2020-10-21 | スピードファム株式会社 | 平面研磨装置 |
CN107363730A (zh) * | 2017-09-11 | 2017-11-21 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | 涡流检测装置及*** |
CN107843378A (zh) * | 2017-12-19 | 2018-03-27 | 浙江工业大学 | 液动压悬浮抛光流体压力无线采集*** |
CN107991015A (zh) * | 2018-01-15 | 2018-05-04 | 上海交通大学 | 一种小型旋转水槽制备泥石流的水压测定*** |
CN111263682A (zh) | 2018-03-13 | 2020-06-09 | 应用材料公司 | 化学机械抛光期间的振动的监测 |
CN110281144A (zh) * | 2019-07-22 | 2019-09-27 | 苏州大学 | 电诱导辅助化学机械抛光测试装置 |
WO2022086672A1 (en) * | 2020-10-21 | 2022-04-28 | Applied Materials, Inc. | Sequential application of cleaning fluids for improved maintenance of chemical mechanical polishing systems |
CN113084696B (zh) * | 2021-03-08 | 2022-05-06 | 长江存储科技有限责任公司 | 抛光垫及研磨装置 |
CN114523407A (zh) * | 2022-01-26 | 2022-05-24 | 苏州中砥半导体材料有限公司 | 一种磷化铟单晶制备***及方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6464562B1 (en) * | 2001-12-19 | 2002-10-15 | Winbond Electronics Corporation | System and method for in-situ monitoring slurry flow rate during a chemical mechanical polishing process |
US6976902B2 (en) * | 2003-09-03 | 2005-12-20 | Samsung Electronics Co., Ltd. | Chemical mechanical polishing apparatus |
CN101716745A (zh) * | 2009-11-09 | 2010-06-02 | 清华大学 | 一种超声辅助化学机械抛光蓝宝石衬底材料的装置及方法 |
CN101966695A (zh) * | 2010-08-30 | 2011-02-09 | 兰州瑞德实业集团有限公司 | 抛光机的上抛光盘 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63232931A (ja) * | 1987-03-19 | 1988-09-28 | Canon Inc | 研磨方法 |
US6876454B1 (en) * | 1995-03-28 | 2005-04-05 | Applied Materials, Inc. | Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations |
KR100218309B1 (ko) * | 1996-07-09 | 1999-09-01 | 구본준 | 씨엠피장치의 반도체웨이퍼 레벨링 감지장치 및 방법 |
US5857893A (en) * | 1996-10-02 | 1999-01-12 | Speedfam Corporation | Methods and apparatus for measuring and dispensing processing solutions to a CMP machine |
AU2001279126A1 (en) * | 2000-07-31 | 2002-02-13 | Silicon Valley Group Inc | In-situ method and apparatus for end point detection in chemical mechanical polishing |
US6257953B1 (en) * | 2000-09-25 | 2001-07-10 | Center For Tribology, Inc. | Method and apparatus for controlled polishing |
EP1270148A1 (en) * | 2001-06-22 | 2003-01-02 | Infineon Technologies SC300 GmbH & Co. KG | Arrangement and method for conditioning a polishing pad |
US6722946B2 (en) * | 2002-01-17 | 2004-04-20 | Nutool, Inc. | Advanced chemical mechanical polishing system with smart endpoint detection |
US7016790B2 (en) * | 2002-10-23 | 2006-03-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | In-line hot-wire sensor for slurry monitoring |
US20040242121A1 (en) * | 2003-05-16 | 2004-12-02 | Kazuto Hirokawa | Substrate polishing apparatus |
JP2005011977A (ja) * | 2003-06-18 | 2005-01-13 | Ebara Corp | 基板研磨装置および基板研磨方法 |
US6986284B2 (en) * | 2003-08-29 | 2006-01-17 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | System and method for characterizing a textured surface |
JP4228146B2 (ja) * | 2004-03-08 | 2009-02-25 | 株式会社ニコン | 研磨装置 |
JP2008060460A (ja) * | 2006-09-01 | 2008-03-13 | Fujifilm Corp | 金属研磨方法 |
TW200916261A (en) * | 2007-09-07 | 2009-04-16 | Cabot Microelectronics Corp | CMP sensor and control system |
CN101275825A (zh) * | 2008-01-11 | 2008-10-01 | 浙江工业大学 | Cmp过程中晶圆下液体薄膜中间变量的测量装置 |
CN101554709B (zh) * | 2009-05-11 | 2011-03-30 | 清华大学 | 一种电机内置式抛光机转台 |
-
2011
- 2011-03-10 CN CN201110058436A patent/CN102221416B/zh active Active
- 2011-06-07 US US13/387,941 patent/US20120315826A1/en not_active Abandoned
- 2011-06-07 WO PCT/CN2011/075422 patent/WO2012119354A1/zh active Application Filing
- 2011-08-12 TW TW100128834A patent/TW201236813A/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6464562B1 (en) * | 2001-12-19 | 2002-10-15 | Winbond Electronics Corporation | System and method for in-situ monitoring slurry flow rate during a chemical mechanical polishing process |
US6976902B2 (en) * | 2003-09-03 | 2005-12-20 | Samsung Electronics Co., Ltd. | Chemical mechanical polishing apparatus |
CN101716745A (zh) * | 2009-11-09 | 2010-06-02 | 清华大学 | 一种超声辅助化学机械抛光蓝宝石衬底材料的装置及方法 |
CN101966695A (zh) * | 2010-08-30 | 2011-02-09 | 兰州瑞德实业集团有限公司 | 抛光机的上抛光盘 |
Also Published As
Publication number | Publication date |
---|---|
WO2012119354A1 (zh) | 2012-09-13 |
US20120315826A1 (en) | 2012-12-13 |
TW201236813A (en) | 2012-09-16 |
CN102221416A (zh) | 2011-10-19 |
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Owner name: TIANJIN HWATSING TECHNOLOGY COMPANY LIMITED Free format text: FORMER OWNER: TSINGHUA UNIVERSITY Effective date: 20150209 |
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Free format text: CORRECT: ADDRESS; FROM: 100084 HAIDIAN, BEIJING TO: 300350 JINNAN, TIANJIN |
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TR01 | Transfer of patent right |
Effective date of registration: 20150209 Address after: 300350, No. 8, building 9, ha Hing Road, Haihe science and Technology Park, Jinnan District, Tianjin Patentee after: TIANJIN HWATSING TECHNOLOGY COMPANY LIMITED (HWATSING CO., LTD.) Address before: 100084 Haidian District 100084-82 mailbox Beijing Patentee before: Tsinghua University |
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PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Polishing solution physical parameter measuring apparatus, measuring method and chemically mechanical polishing equipment Effective date of registration: 20180206 Granted publication date: 20121010 Pledgee: Tsinghua Holdings Co., Ltd. Pledgor: TIANJIN HWATSING TECHNOLOGY COMPANY LIMITED (HWATSING CO., LTD.) Registration number: 2018120000003 |
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Date of cancellation: 20191022 Granted publication date: 20121010 Pledgee: Tsinghua Holdings Co., Ltd. Pledgor: TIANJIN HWATSING TECHNOLOGY COMPANY LIMITED (HWATSING CO., LTD.) Registration number: 2018120000003 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: 300350, No. 8, building 9, ha Hing Road, Haihe science and Technology Park, Jinnan District, Tianjin Patentee after: Huahaiqingke Co.,Ltd. Address before: 300350, No. 8, building 9, ha Hing Road, Haihe science and Technology Park, Jinnan District, Tianjin Patentee before: TSINGHUA University |
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CP01 | Change in the name or title of a patent holder |