AU2001279126A1 - In-situ method and apparatus for end point detection in chemical mechanical polishing - Google Patents

In-situ method and apparatus for end point detection in chemical mechanical polishing

Info

Publication number
AU2001279126A1
AU2001279126A1 AU2001279126A AU7912601A AU2001279126A1 AU 2001279126 A1 AU2001279126 A1 AU 2001279126A1 AU 2001279126 A AU2001279126 A AU 2001279126A AU 7912601 A AU7912601 A AU 7912601A AU 2001279126 A1 AU2001279126 A1 AU 2001279126A1
Authority
AU
Australia
Prior art keywords
end point
mechanical polishing
chemical mechanical
point detection
situ method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001279126A
Inventor
Jamie Nam
Hilario L. Oh
Nannaji Saka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML US Inc
Original Assignee
ASML US Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/628,471 external-priority patent/US6476921B1/en
Application filed by ASML US Inc filed Critical ASML US Inc
Publication of AU2001279126A1 publication Critical patent/AU2001279126A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • B24B37/013Devices or means for detecting lapping completion
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
AU2001279126A 2000-07-31 2001-07-31 In-situ method and apparatus for end point detection in chemical mechanical polishing Abandoned AU2001279126A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US09628471 2000-07-31
US09/628,471 US6476921B1 (en) 2000-07-31 2000-07-31 In-situ method and apparatus for end point detection in chemical mechanical polishing
US25893100P 2000-12-29 2000-12-29
US60258931 2000-12-29
PCT/US2001/024146 WO2002010729A1 (en) 2000-07-31 2001-07-31 In-situ method and apparatus for end point detection in chemical mechanical polishing

Publications (1)

Publication Number Publication Date
AU2001279126A1 true AU2001279126A1 (en) 2002-02-13

Family

ID=26946968

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001279126A Abandoned AU2001279126A1 (en) 2000-07-31 2001-07-31 In-situ method and apparatus for end point detection in chemical mechanical polishing

Country Status (9)

Country Link
US (1) US6798529B2 (en)
EP (1) EP1322940A4 (en)
JP (1) JP2004514273A (en)
KR (1) KR20030025281A (en)
CN (1) CN1466676A (en)
AU (1) AU2001279126A1 (en)
MY (1) MY128145A (en)
TW (1) TW491753B (en)
WO (1) WO2002010729A1 (en)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020023715A1 (en) * 2000-05-26 2002-02-28 Norio Kimura Substrate polishing apparatus and substrate polishing mehod
US6799136B2 (en) * 2001-08-09 2004-09-28 Texas Instruments Incorporated Method of estimation of wafer polish rates
KR100434189B1 (en) 2002-03-21 2004-06-04 삼성전자주식회사 Apparatus and method for chemically and mechanically polishing semiconductor wafer
US6806948B2 (en) * 2002-03-29 2004-10-19 Lam Research Corporation System and method of broad band optical end point detection for film change indication
CN1302522C (en) * 2002-05-15 2007-02-28 旺宏电子股份有限公司 Terminal detection system for chemical and mechanical polisher
DE10223945B4 (en) * 2002-05-29 2006-12-21 Advanced Micro Devices, Inc., Sunnyvale Method for improving the production of damascene metal structures
US7853904B2 (en) * 2002-06-07 2010-12-14 Cadence Design Systems, Inc. Method and system for handling process related variations for integrated circuits based upon reflections
AU2003274370A1 (en) * 2002-06-07 2003-12-22 Praesagus, Inc. Characterization adn reduction of variation for integrated circuits
US7363099B2 (en) * 2002-06-07 2008-04-22 Cadence Design Systems, Inc. Integrated circuit metrology
US20040038502A1 (en) * 2002-06-26 2004-02-26 Sethuraman Jayashankar Method of detecting chemical mechanical polishing endpoints in thin film head processes
US7042564B2 (en) * 2002-08-08 2006-05-09 Applied Materials, Israel, Ltd. Wafer inspection methods and an optical inspection tool
US7235488B2 (en) 2002-08-28 2007-06-26 Micron Technology, Inc. In-situ chemical-mechanical planarization pad metrology using ultrasonic imaging
US6970043B2 (en) * 2002-10-29 2005-11-29 Fairchild Semiconductor Corporation Low voltage, low power differential receiver
US6676483B1 (en) * 2003-02-03 2004-01-13 Rodel Holdings, Inc. Anti-scattering layer for polishing pad windows
SG125108A1 (en) * 2003-03-11 2006-09-29 Asml Netherlands Bv Assembly comprising a sensor for determining at least one of tilt and height of a substrate, a method therefor and a lithographic projection apparatus
US7217649B2 (en) * 2003-03-14 2007-05-15 Lam Research Corporation System and method for stress free conductor removal
US7232766B2 (en) * 2003-03-14 2007-06-19 Lam Research Corporation System and method for surface reduction, passivation, corrosion prevention and activation of copper surface
US7009281B2 (en) * 2003-03-14 2006-03-07 Lam Corporation Small volume process chamber with hot inner surfaces
US7078344B2 (en) * 2003-03-14 2006-07-18 Lam Research Corporation Stress free etch processing in combination with a dynamic liquid meniscus
JP4219718B2 (en) * 2003-03-28 2009-02-04 Hoya株式会社 Manufacturing method of glass substrate for EUV mask blanks and manufacturing method of EUV mask blanks
US20050026542A1 (en) * 2003-07-31 2005-02-03 Tezer Battal Detection system for chemical-mechanical planarization tool
JP4174399B2 (en) * 2003-09-24 2008-10-29 株式会社東芝 INSPECTION SYSTEM, INSPECTION METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD
US7050880B2 (en) * 2003-12-30 2006-05-23 Sc Solutions Chemical-mechanical planarization controller
US7315642B2 (en) * 2004-02-12 2008-01-01 Applied Materials, Israel, Ltd. System and method for measuring thin film thickness variations and for compensating for the variations
US20050197721A1 (en) * 2004-02-20 2005-09-08 Yung-Cheng Chen Control of exposure energy on a substrate
EP1758711B1 (en) * 2004-06-21 2013-08-07 Ebara Corporation Polishing apparatus and polishing method
JP4505634B2 (en) * 2004-08-13 2010-07-21 国立大学法人東北大学 Method for evaluating electronic component using semiconductor and method for managing electronic component using semiconductor
KR20060078252A (en) * 2004-12-31 2006-07-05 동부일렉트로닉스 주식회사 Monitor pattern for sti cmp process
KR101361875B1 (en) 2005-05-26 2014-02-12 가부시키가이샤 니콘 Method for detecting polishing end in cmp polishing device, cmp polishing device, and semiconductor device manufacturing method
EP1808823A1 (en) * 2005-12-14 2007-07-18 Wincor Nixdorf International GmbH Apparatus for assessing the authenticity of a valuable medium
US7849281B2 (en) * 2006-04-03 2010-12-07 Emc Corporation Method and system for implementing hierarchical permission maps in a layered volume graph
JP5283506B2 (en) * 2006-09-12 2013-09-04 株式会社荏原製作所 Polishing apparatus and polishing method
US8260035B2 (en) * 2006-09-22 2012-09-04 Kla-Tencor Corporation Threshold determination in an inspection system
CN102490112B (en) * 2006-10-06 2015-03-25 株式会社荏原制作所 Processing end point detecting method, polishing method and polishing apparatus
JP4988380B2 (en) * 2007-02-26 2012-08-01 ルネサスエレクトロニクス株式会社 Semiconductor device manufacturing method and semiconductor manufacturing apparatus
US20090181475A1 (en) * 2008-01-11 2009-07-16 Novellus Systems, Inc. Detecting the presence of a workpiece relative to a carrier head
DE102008021569A1 (en) * 2008-04-30 2009-11-05 Advanced Micro Devices, Inc., Sunnyvale System and method for optical endpoint detection during CMP using a substrate spanning signal
US20090275265A1 (en) * 2008-05-02 2009-11-05 Applied Materials, Inc. Endpoint detection in chemical mechanical polishing using multiple spectra
KR101013569B1 (en) * 2008-12-30 2011-02-14 창익기계공업(주) Feeding device and key-pad puncher thereof
EP2571655B1 (en) * 2010-05-18 2014-04-23 Marposs Societa' Per Azioni Method and apparatus for optically measuring by interferometry the thickness of an object
IT1399875B1 (en) * 2010-05-18 2013-05-09 Marposs Spa METHOD AND EQUIPMENT FOR THE OPTICAL MEASUREMENT BY INTERFEROMETRY OF THE THICKNESS OF AN OBJECT
IT1399876B1 (en) * 2010-05-18 2013-05-09 Marposs Spa METHOD AND EQUIPMENT FOR THE OPTICAL MEASUREMENT BY INTERFEROMETRY OF THE THICKNESS OF AN OBJECT
CN102812157B (en) * 2010-11-30 2014-08-20 深圳市华星光电技术有限公司 Method For Etching Metal, Control Method For Etching Metal And Apparatus Thereof
CN102221416B (en) * 2011-03-10 2012-10-10 清华大学 Polishing solution physical parameter measuring apparatus, measuring method and chemically mechanical polishing equipment
US8563335B1 (en) * 2012-04-23 2013-10-22 Applied Materials, Inc. Method of controlling polishing using in-situ optical monitoring and fourier transform
US9011202B2 (en) 2012-04-25 2015-04-21 Applied Materials, Inc. Fitting of optical model with diffraction effects to measured spectrum
US9248544B2 (en) * 2012-07-18 2016-02-02 Applied Materials, Inc. Endpoint detection during polishing using integrated differential intensity
US20140078495A1 (en) * 2012-09-14 2014-03-20 Stmicroelectronics, Inc. Inline metrology for attaining full wafer map of uniformity and surface charge
US10513006B2 (en) * 2013-02-04 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. High throughput CMP platform
US9242337B2 (en) 2013-03-15 2016-01-26 Applied Materials, Inc. Dynamic residue clearing control with in-situ profile control (ISPC)
US10309013B2 (en) * 2013-03-15 2019-06-04 Applied Materials, Inc. Method and system for identifying a clean endpoint time for a chamber
CN103394994B (en) * 2013-07-18 2017-12-15 上海集成电路研发中心有限公司 A kind of polishing method of wafer
TW201543016A (en) * 2014-05-06 2015-11-16 蘋果傑克199有限合夥公司 Stress analysis of semiconductor wafers
CN104034765A (en) * 2014-07-07 2014-09-10 中国船舶重工集团公司第七二五研究所 Electrochemical detection method through partial morphology scanning
CN105437076A (en) * 2014-08-27 2016-03-30 中芯国际集成电路制造(上海)有限公司 Real-time control method and system for wafer contour
US11639881B1 (en) 2014-11-19 2023-05-02 Carlos A. Rosero Integrated, continuous diagnosis, and fault detection of hydrodynamic bearings by capacitance sensing
US9835449B2 (en) 2015-08-26 2017-12-05 Industrial Technology Research Institute Surface measuring device and method thereof
CN108608328B (en) * 2018-07-06 2023-09-26 中国工程物理研究院激光聚变研究中心 Polishing friction force measuring device and measuring method thereof
US11756840B2 (en) * 2018-09-20 2023-09-12 Taiwan Semiconductor Manufacturing Co., Ltd. Reflectance measurement system and method thereof

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4959113C1 (en) 1989-07-31 2001-03-13 Rodel Inc Method and composition for polishing metal surfaces
US5094536A (en) * 1990-11-05 1992-03-10 Litel Instruments Deformable wafer chuck
US5069002A (en) 1991-04-17 1991-12-03 Micron Technology, Inc. Apparatus for endpoint detection during mechanical planarization of semiconductor wafers
US5499733A (en) 1992-09-17 1996-03-19 Luxtron Corporation Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment
US5486129A (en) 1993-08-25 1996-01-23 Micron Technology, Inc. System and method for real-time control of semiconductor a wafer polishing, and a polishing head
JP3311116B2 (en) 1993-10-28 2002-08-05 株式会社東芝 Semiconductor manufacturing equipment
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
US5835225A (en) 1994-11-30 1998-11-10 Micron Technology, Inc. Surface properties detection by reflectance metrology
JPH08174411A (en) 1994-12-22 1996-07-09 Ebara Corp Polishing device
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5967030A (en) 1995-11-17 1999-10-19 Micron Technology, Inc. Global planarization method and apparatus
US5676587A (en) 1995-12-06 1997-10-14 International Business Machines Corporation Selective polish process for titanium, titanium nitride, tantalum and tantalum nitride
US5840629A (en) 1995-12-14 1998-11-24 Sematech, Inc. Copper chemical mechanical polishing slurry utilizing a chromate oxidant
US5923408A (en) * 1996-01-31 1999-07-13 Canon Kabushiki Kaisha Substrate holding system and exposure apparatus using the same
WO1997033716A1 (en) 1996-03-13 1997-09-18 Trustees Of The Stevens Institute Of Technology Tribochemical polishing of ceramics and metals
US6074287A (en) 1996-04-12 2000-06-13 Nikon Corporation Semiconductor wafer polishing apparatus
US5872633A (en) * 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
JPH1076464A (en) 1996-08-30 1998-03-24 Canon Inc Polishing method and polishing device using therewith
US6036587A (en) 1996-10-10 2000-03-14 Applied Materials, Inc. Carrier head with layer of conformable material for a chemical mechanical polishing system
US5954997A (en) 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
US6056632A (en) 1997-02-13 2000-05-02 Speedfam-Ipec Corp. Semiconductor wafer polishing apparatus with a variable polishing force wafer carrier head
US5838448A (en) * 1997-03-11 1998-11-17 Nikon Corporation CMP variable angle in situ sensor
US6108091A (en) 1997-05-28 2000-08-22 Lam Research Corporation Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing
US6062952A (en) 1997-06-05 2000-05-16 Robinson; Karl M. Planarization process with abrasive polishing slurry that is selective to a planarized surface
US5985679A (en) 1997-06-12 1999-11-16 Lsi Logic Corporation Automated endpoint detection system during chemical-mechanical polishing
US5770103A (en) 1997-07-08 1998-06-23 Rodel, Inc. Composition and method for polishing a composite comprising titanium
US5964653A (en) * 1997-07-11 1999-10-12 Applied Materials, Inc. Carrier head with a flexible membrane for a chemical mechanical polishing system
US5888120A (en) * 1997-09-29 1999-03-30 Lsi Logic Corporation Method and apparatus for chemical mechanical polishing
US6001730A (en) 1997-10-20 1999-12-14 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers
US5897375A (en) 1997-10-20 1999-04-27 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
US5916016A (en) * 1997-10-23 1999-06-29 Vlsi Technology, Inc. Methods and apparatus for polishing wafers
US5953115A (en) 1997-10-28 1999-09-14 International Business Machines Corporation Method and apparatus for imaging surface topography of a wafer
US5985748A (en) 1997-12-01 1999-11-16 Motorola, Inc. Method of making a semiconductor device using chemical-mechanical polishing having a combination-step process
US6531397B1 (en) 1998-01-09 2003-03-11 Lsi Logic Corporation Method and apparatus for using across wafer back pressure differentials to influence the performance of chemical mechanical polishing
US6068539A (en) 1998-03-10 2000-05-30 Lam Research Corporation Wafer polishing device with movable window
US6063306A (en) 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
US5972787A (en) 1998-08-18 1999-10-26 International Business Machines Corp. CMP process using indicator areas to determine endpoint
US6046111A (en) 1998-09-02 2000-04-04 Micron Technology, Inc. Method and apparatus for endpointing mechanical and chemical-mechanical planarization of microelectronic substrates
JP4484370B2 (en) * 1998-11-02 2010-06-16 アプライド マテリアルズ インコーポレイテッド Method for determining an end point for chemical mechanical polishing of a metal layer on a substrate and apparatus for polishing a metal layer of a substrate
US6204922B1 (en) 1998-12-11 2001-03-20 Filmetrics, Inc. Rapid and accurate thin film measurement of individual layers in a multi-layered or patterned sample
US6071177A (en) 1999-03-30 2000-06-06 Taiwan Semiconductor Manufacturing Co., Ltd Method and apparatus for determining end point in a polishing process
US6068549A (en) 1999-06-28 2000-05-30 Mitsubishi Materials Corporation Structure and method for three chamber CMP polishing head
US6776692B1 (en) * 1999-07-09 2004-08-17 Applied Materials Inc. Closed-loop control of wafer polishing in a chemical mechanical polishing system
US6290584B1 (en) 1999-08-13 2001-09-18 Speedfam-Ipec Corporation Workpiece carrier with segmented and floating retaining elements
US6476921B1 (en) * 2000-07-31 2002-11-05 Asml Us, Inc. In-situ method and apparatus for end point detection in chemical mechanical polishing
US6257953B1 (en) 2000-09-25 2001-07-10 Center For Tribology, Inc. Method and apparatus for controlled polishing

Also Published As

Publication number Publication date
KR20030025281A (en) 2003-03-28
WO2002010729A1 (en) 2002-02-07
US20030045100A1 (en) 2003-03-06
JP2004514273A (en) 2004-05-13
MY128145A (en) 2007-01-31
TW491753B (en) 2002-06-21
CN1466676A (en) 2004-01-07
EP1322940A1 (en) 2003-07-02
EP1322940A4 (en) 2006-03-15
US6798529B2 (en) 2004-09-28

Similar Documents

Publication Publication Date Title
AU2001279126A1 (en) In-situ method and apparatus for end point detection in chemical mechanical polishing
AU3897600A (en) Method and apparatus for endpoint detection for chemical mechanical polishing
AU2001259566A1 (en) Method and apparatus for end-point detection
IL134237A0 (en) Method and apparatus for endpoint detection for chemical mechanical polishing
AU2002229023A1 (en) Methods, apparatus and slurries for chemical mechanical planarization
AU4351601A (en) Wafer processing apparatus and method
AU2001251534A1 (en) Method and apparatus for in-situ endpoint detection using electrical sensors
AU2001243298A1 (en) Apparatus and method for determining position
AU2001236586A1 (en) Method and apparatus for determining chemical properties
AU2001269717A1 (en) Apparatus and method for detecting pipeline defects
AU2001250540A1 (en) Secure payment method and apparatus
AU2002330840A1 (en) Method and apparatus for detecting objects
GB0119781D0 (en) Method and apparatus for detecting chemical contamination
IL134182A0 (en) Method and apparatus for visual lossless pre-processing
AU2002222639A1 (en) Processing method and processing apparatus
AU2001257318A1 (en) Method and apparatus for in-situ spectroscopic analysis
AUPP930099A0 (en) Improvements in apparatus and method for removing samples
AU2001297960A1 (en) Detection method and apparatus
AU9330601A (en) Method and apparatus for chemical processing
AU2001259104A1 (en) Apparatus and methods for detecting killer particles during chemical mechanical polishing
AU2001231261A1 (en) Key measurement apparatus and method
AU2002223092A1 (en) Pigging method and apparatus
EP1195909A4 (en) Method and apparatus for demodulation
AU2001259603A1 (en) Method and apparatus for determining local viscoelasticity
AU2001231806A1 (en) Method and apparatus in unwinding