CN102208751A - Combined type high-power semiconductor laser side pumping source and preparation method thereof - Google Patents
Combined type high-power semiconductor laser side pumping source and preparation method thereof Download PDFInfo
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- CN102208751A CN102208751A CN 201110124355 CN201110124355A CN102208751A CN 102208751 A CN102208751 A CN 102208751A CN 201110124355 CN201110124355 CN 201110124355 CN 201110124355 A CN201110124355 A CN 201110124355A CN 102208751 A CN102208751 A CN 102208751A
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Abstract
The invention discloses a combined type high-power semiconductor laser side pumping source and a preparation method thereof. The invention aims to solve the technical problems of low finished product rate, low yield, inconvenience for assembly, disassembly and maintenance, shorter service life, and the like of a semiconductor laser pumping source in the prior art. The side pumping source comprises a semiconductor laser module group and a heat radiator, wherein the semiconductor laser module group comprises one or more semiconductor laser modules; and all semiconductor laser modules are fixedly arranged on the heat radiator in a movable linkage way or a welding way. In the invention, the semiconductor laser modules can be tested, aged and screened in advance and can be singly packaged, tested and aged; and different chips can be selected for combining and controlling, and the multi-wavelength wide spectrum output can be realized. If one module of the pumping source is abnormal in the use process, the module can be singly replaced so that the combined type high-power semiconductor laser side pumping source disclosed by the invention has the advantages of higher yield and longer service life.
Description
Technical field
The invention belongs to the laser optoelectronic technical field, relate to semiconductor laser, be specifically related to a kind of composite type high-power semiconductor laser profile pump source and preparation method thereof.
Background technology
The most effective pumping source of solid state laser is a semiconductor laser, and all solid state laser of high-power semiconductor laser pumping is a focus that developed in recent years.Semiconductor is compared with the flash lamp pumping light source, and semiconductor laser has outstanding advantage: (1) operating time is long; (2) low-power consumption; (3) volume is little; (4) absorption spectrum that the more important thing is its spectrum and laser material matches, and therefore the thermal effect that produces is little, helps improving the job stability and the beam quality of solid state laser.
Along with all solid state laser represents more and more wide application prospect in fields such as industry, medical treatment, military affairs, had higher requirement in the diode-end-pumped source as core component.
Usually adopting the light-emitting area of semiconductor laser horizontal array in the side pump of solid laser rod is used is the planar shaped ray structure, and the common employing semiconductor laser horizontal array in profile pump source is positive triangle, Zheng Wujiao, positive heptangle etc.This structure can cause solid laser rod inhomogeneous to the absorption of pump light, and absorption efficiency is low, causes the uniformity of solid state laser output facula relatively poor, and pumping efficiency is low.Traditional light-emitting area is that the side pump of planar shaped ray structure is seen Fig. 1.
" a kind of semiconductor laser side pump module " (CN101834402A) discloses a kind of semiconductor laser side pump module, it is made up of one or more side pump modules unit and a crystal bar, the light-emitting area of its side pump module is the planar shaped ray structure, this side pump module utilizes large power semiconductor laser array as pumping source, through expanding bundle and homogenize, make the uniformity of pump beam and energy density satisfy instructions for use.It has increased fast axis collimation mirror and beam expanding lens, has increased the complexity of structure, simultaneously, between each side pump module separate do not have integrated.
The planar structure light-emitting area of semiconductor laser array pumping source is designed to the semicircular structure light-emitting area, can make the uniform absorption of solid laser rod to pump light source, improve pumping efficiency, the output facula uniformity of solid laser rod improves simultaneously, but there is following shortcoming in traditional semicircular structure side pump (as Fig. 2):
(1) rate of finished products is low.Present semicircular structure side pump preparation process be with the semiconductor laser array integral solder on radiator, a plurality of crust bars are welded on the radiator together, the possibility that the crust bar damages is very high, causes the rate of finished products in diode-end-pumped source low.
(2) can't check and test, also be not easy to wear out.The semiconductor laser array integral solder is prepared into the diode-end-pumped source on radiator, this kind technology can cause pumping source to test and to test, and also is not easy to wear out.
(3) cost height.Carry out in the ageing process in integral body, the chip damage probability is higher, makes that the diode-end-pumped source cost of making is higher.
(4) when wearing out, must integral body wear out, the ageing process chips may be damaged, and causes the diode-end-pumped source defective.
(5) maintenance difficult.In the use, chip is not replaceable, and after single semiconductor laser damaged, chip was not replaceable, and maintenance difficult influence life-span in diode-end-pumped source, makes its life-span reduction.
The semiconductor laser array (patent No. ZL01220203.7) of utility model semi-cylindrical type light-emitting area discloses the solid state laser pumping source that a kind of semiconductor device is made, the LD linear array that adopts semicircle light-emitting area is as pumping source, make the uniform absorption of rod-shaped laser medium to pumping source, thereby raising pumping efficiency, also improved simultaneously the uniformity of solid state laser output facula, according to this patent document introduction, the LD linear array efficient of semi-cylindrical light-emitting area is enhanced about more than once than plane LD linear array, but in this patent be with the semiconductor kistributed-feedback laser chip directly be welded on heat sink on, can't test and test, be not easy to wear out, can cause the rate of finished products of pumping source low; In the ageing process, chip may damage, qualification rate is low, causes the pumping source qualification rate low; In addition, it is not in use if after single chip broke down, chip was not replaceable, and maintenance difficult influences life-span of whole solid state laser pumping source.
Utility model semiconductor laser side pump Pu module (patent No. ZL200420114915.7) discloses a kind of arch semiconductor laser side pump Pu module of the hard-pressed bale pumping configuration that adopts concentric pumping, cools off with one heart, in this patent to the requirement harshness of gain media shape, be applicable to that gain media is bar-shaped form, its be equally with the semiconductor kistributed-feedback laser chip directly be welded on heat sink on, can't test and test, be not easy to wear out, can cause the rate of finished products of pumping source low; In the ageing process, chip may damage, qualification rate is low, causes the pumping source qualification rate low; In addition, it is not in use if after single chip broke down, chip was not replaceable, and maintenance difficult influences life-span of whole solid state laser pumping source.
Summary of the invention
Technical problems such as the present invention aims to provide a kind of composite type high-power semiconductor laser profile pump source and preparation method thereof, and is low with the rate of finished products that solves diode-end-pumped of the prior art source, that qualification rate is low, and the dismounting maintenance is inconvenient, the life-span is short.
Technical scheme of the present invention is as follows:
A kind of composite type high-power semiconductor laser profile pump source, comprise semiconductor laser module group and radiator, it is characterized in that: described semiconductor laser module group is formed (having formed semiconductor laser array) by one or more semiconductor laser modules, and wherein each semiconductor laser module all is fixed on the radiator by active link mode or welding manner.
Above-mentioned semiconductor laser module is formed by chip with the substrate of chips welding, and substrate is fixed on the radiator by active link mode or welding manner.
Above-mentioned semiconductor laser module group is to be made of a plurality of semiconductor laser module series, parallel or connection in series-parallel combination.
Above-mentioned semiconductor laser module is through the semiconductor laser module after testing, wear out, screening.
The shape in combinations thereof formula high-power semiconductor laser profile pump source and the shape of gain media or demand coupling can be other shapes such as annular, polygon, rectangle, square, rhombus.Profile pump of the present invention source and gain media have constituted solid state laser jointly.
The preferred annular of the shape in combinations thereof formula high-power semiconductor laser profile pump source, polygon, rectangle, square or rhombus.
Said chip is single tube chip, mini bar, crust bar or the chip module that connected to form by a plurality of single tube chips, a plurality of mini bar, a plurality of crust bar chip.
Above-mentioned radiator is high thermal conductivity cooling base (such as copper, diamond or silvery cooling base), liquid cooling heat radiator or semiconductor refrigeration radiating device.
The present invention also provides the preparation method in a kind of composite type high-power semiconductor laser profile pump source, may further comprise the steps:
(1) single tube chip, mini bar, crust bar or a plurality of single tube chipset or a plurality of crust bar chip are installed on the substrate, form one or form a plurality of semiconductor laser modules respectively;
(2) semiconductor laser module is tested, wears out, screened;
(3) will screen the qualified one or more semiconductor laser modules in back and be installed on the radiator, make composite type high-power semiconductor laser profile pump source.
In step (3) before, preferably earlier according to the shape of gain media or the shape in demand global design composite type high-power semiconductor laser profile pump source.
The installation of above-mentioned steps (3) is meant is fixed in substrate on the radiator by active link mode or welding manner.
The present invention has following beneficial effect:
(1) the integrated mode of composite type high-power semiconductor laser profile pump source employing modularization of the present invention is separate between each module;
(2) each semiconductor laser module can be tested in advance, wears out, screen.The use amount of the process mini-bus bar of testing, wearing out and screen significantly reduces than the number of traditional semicircular structure side pump preparation process mini-bus bar, and the rate of finished products with improving in the production preparation process has reduced the underproof probability of use chips;
(3) filter out the known good semiconductor laser module of performance after earlier each semiconductor laser module being tested separately, being worn out, it is installed on the radiator, make the diode-end-pumped source, can guarantee that the performance in diode-end-pumped source is known good, the rate of finished products height;
(4) test is easy, and a plurality of semiconductor semiconductor laser module compound modes are flexible, easily check, test, aging;
(5) safeguard simple and easy, replaceability good, the life-span is long, and is replaceable after the single semiconductor laser module damage, follow-uply easy to maintenancely simple and easyly makes the life-span in diode-end-pumped source long;
(6) reliability height is applicable in the environment complicated and changeable such as high temperature and uses that semiconductor laser module can conveniently carry out reliability testing;
(7) cost is low, because of each semiconductor laser module can be tested in advance, wears out, screen, improved the rate of finished products in the production preparation process, reduced the underproof probability of use chips, the composite type high-power semiconductor laser profile pump source for preparing simultaneously is to select the known good semiconductor laser module of performance for use, rate of finished products height, whole technical process make cost reduce;
(8) structure in the composite type high-power semiconductor laser profile pump source among the present invention can be used no indium technology, can use hard solder.
Description of drawings
The light-emitting area that Fig. 1 is traditional is the side pump schematic diagram of planar shaped ray structure
The semicircular structure side pump schematic diagram that Fig. 2 is traditional;
Fig. 3 is a principle schematic of the present invention;
Fig. 4 is the embodiment of the invention one structural representation;
Fig. 5 is a disassembly diagram of the embodiment of the invention one;
Fig. 6 is the secondary disassembly diagram of the embodiment of the invention two;
Fig. 7 is the embodiment of the invention two structural representations;
Fig. 8 is the schematic diagram of the embodiment of the invention three structures;
Fig. 9 is the embodiment of the invention three test result figure.
Wherein: 1 is the semiconductor laser module group; 2 is radiator; 3,6,7,8,9,10,11,12,13,14,15,16,17,18,19,21 is semiconductor laser module; 4 is chip; 5 is substrate; 20 are solid laser rod (being gain media).
Embodiment
Below in conjunction with accompanying drawing the present invention is done and to describe in further detail:
Referring to the principle of the invention schematic diagram that Fig. 3 provides, a kind of composite type high-power semiconductor laser profile pump source comprises semiconductor laser module group 1 and radiator 2, and described semiconductor laser module group 1 is fixed on the radiator 2.
Above-mentioned semiconductor laser module group 1 is to be rearranged by one or more semiconductor laser modules 3.
Above-mentioned semiconductor laser module 3 is made up of chip 4 and substrate 5.
Above-mentioned semiconductor laser module 3 is to filter out the good semiconductor laser module of known performance after testing in advance, wearing out.
Four semiconductor laser modules 3 are the four directions symmetrical distribution among Fig. 3, and are fixed on two module radiators 2.
The material of substrate 5 is a high thermal conductivity materials.Substrate mainly has been thermolysis, can adopt dielectric, perhaps also can not consider insulation.
A kind of preparation method of composite type high-power semiconductor laser pumping source:
(1) is installed on the substrate 5 by single tube chip, mini bar, crust bar or a plurality of single tube chipset, a plurality of crust bar chip, formed semiconductor laser module;
(2) semiconductor laser module can be tested in advance, wears out, screen;
(3) select for use good semiconductor laser module 3 series, parallel of performance or connection in series-parallel in conjunction with forming semiconductor laser module group 1, it is installed on the radiator 2, make the composite type height
Power semiconductor laser profile pump source.
According to the operation principle of laser, when solid laser crystal was luminous in the diode-end-pumped, going out the heat that produces in the photoreduction process can be passed on the radiator 2 by semiconductor laser module group 1, is spread out of by radiator 2.
It is known good to filter out performance after semiconductor laser module can be tested in advance, wear out in the composite type high-power semiconductor laser profile pump of the present invention source, it can be controlled respectively, aging separately, test, screening make that rate of finished products height, the life-span in composite type high-power semiconductor laser profile pump source are long.Simultaneously, semiconductor laser module can be selected the chip of different wave length for use, realizes the output of wide spectrum multi-wavelength.
Embodiment one
As Fig. 4, Fig. 5 and composite type high-power semiconductor laser profile pump source (comparing to schematic diagram layout type shown in Figure 1, more compact structure) shown in Figure 6, comprise semiconductor laser module group 1 and radiator 2.Described semiconductor laser module 1 is fixed on the radiator 2 by active link mode (such as stopper slot, clamping or other known mechanical connection manners).
Semiconductor laser module group 1 selects for use semiconductor laser module 6,7,8,9,10,11 to rearrange;
Above-mentioned semiconductor laser module the 6,7,8,9,10, the 11st filters out the known good semiconductor laser module of performance after testing in advance, wearing out;
The material of above-mentioned substrate 5 is a high thermal conductivity materials.
Above-mentioned radiator 2 can be selected the material and the liquid refrigerating of high thermal conductivity for use, and high thermal conductivity materials can be selected copper, diamond, copper tungsten etc. for use.
The output of the wide spectrum of multi-wavelength can be realized in present embodiment composite type high-power semiconductor laser profile pump source.
The preparation method of this composite type high-power semiconductor laser pumping source:
(1) is installed on the substrate 5 by single tube chip, mini bar, crust bar or a plurality of single tube chipset, a plurality of crust bar chip, formed semiconductor laser module;
(2) semiconductor laser module is tested, wears out, screened;
(3) select for use the known good semiconductor laser module 6,7,8,9,10,11 of performance to be installed on the radiator 2, be prepared into composite type high-power semiconductor laser profile pump source.
Embodiment two
Composite type high-power semiconductor laser profile pump source as shown in Figure 7, it is shaped as triangle.
Semiconductor laser module group 1 selects for use semiconductor laser module 12,13,14 to rearrange.
The material of above-mentioned substrate 5 is a high thermal conductivity materials.
What chip 4 was selected for use is that 10 crust bar chips connect to form.
Semiconductor laser module the 12,13, the 14th, the good semiconductor laser module of known performance that filters out after testing in advance, wearing out.
Above-mentioned radiator 2 can be selected the conduct refrigeration of high thermal conductivity for use.
Embodiment three
Composite type high-power semiconductor laser profile pump source as shown in Figure 8, it is shaped as pentagon, and it comprises semiconductor laser module group 1 and radiator 2.
Semiconductor laser module group 1 selects for use semiconductor laser module 15,16,17,18,19 to rearrange;
Semiconductor laser module the 15,16,17,18, the 19th, the good semiconductor laser module of known performance that filters out after testing in advance, wearing out.
What chip 4 was selected for use is that 7 mini bar chips connect to form.
The material of above-mentioned substrate 5 is a high thermal conductivity materials.
Above-mentioned radiator 2 can be selected the conduct refrigeration of high thermal conductivity for use.
The composite type high-power semiconductor laser profile pump source test result figure of present embodiment three sees Fig. 9.In temperature is 58 ℃, and input current is 20Hz, 200us, and during 200A, its power curve such as Fig. 9, electro-optical efficiency can reach 47.01%, and peak power is 5189.38W.
To sum up, semiconductor laser module filters out the known good semiconductor laser module of performance after can testing in advance, wearing out in the composite type high-power semiconductor laser profile pump of the present invention source, it can encapsulate separately, test, aging, dismounting separately, control, flexible combination can select different chips to make up, and realize the wide spectrum output of multi-wavelength.If certain module occurs unusual, can change separately, make that rate of finished products height, the life-span in composite type high-power semiconductor laser profile pump of the present invention source are long.
Claims (11)
1. composite type high-power semiconductor laser profile pump source, comprise semiconductor laser module group and radiator, it is characterized in that: described semiconductor laser module group is made up of one or more semiconductor laser modules, and wherein each semiconductor laser module all is fixed on the radiator by active link mode or welding manner.
2. a kind of composite type high-power semiconductor laser pumping source according to claim 1, it is characterized in that: described semiconductor laser module is formed by chip with the substrate of chips welding, and substrate is fixed on the radiator by active link mode or welding manner.
3. composite type high-power semiconductor laser profile pump according to claim 2 source is characterized in that: described semiconductor laser module group is to be made of a plurality of semiconductor laser module series, parallel or connection in series-parallel combination.
4. composite type high-power semiconductor laser profile pump according to claim 2 source is characterized in that: described semiconductor laser module is through the semiconductor laser module after testing, wear out, screening.
5. composite type high-power semiconductor laser profile pump according to claim 2 source is characterized in that: the shape in described composite type high-power semiconductor laser profile pump source and the shape of gain media or demand coupling.
6. composite type high-power semiconductor laser profile pump according to claim 5 source is characterized in that: described composite type high-power semiconductor laser profile pump source be shaped as annular, polygon, rectangle, square or rhombus.
7. composite type high-power semiconductor laser profile pump according to claim 2 source is characterized in that: described chip is single tube chip, mini bar, crust bar or the chip module that connected to form by a plurality of single tube chips, a plurality of mini bar, a plurality of crust bar chip.
8. composite type high-power semiconductor laser profile pump according to claim 2 source is characterized in that: described radiator is high thermal conductivity cooling base, liquid cooling heat radiator or semiconductor refrigeration radiating device.
9. the preparation method in a composite type high-power semiconductor laser profile pump source may further comprise the steps:
(1) single tube chip, mini bar, crust bar or a plurality of single tube chipset or a plurality of crust bar chip are installed on the substrate, form one or form a plurality of semiconductor laser modules respectively;
(2) semiconductor laser module is tested, wears out, screened;
(3) will screen the qualified one or more semiconductor laser modules in back and be installed on the radiator, make composite type high-power semiconductor laser profile pump source.
10. preparation method according to claim 9 is characterized in that: step (3) before, and is first according to the shape of gain media or the shape in demand global design composite type high-power semiconductor laser profile pump source.
11. preparation method according to claim 10 is characterized in that: the installation of step (3) is meant is fixed in substrate on the radiator by active link mode or welding manner.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2014079374A1 (en) * | 2012-11-22 | 2014-05-30 | 西安炬光科技有限公司 | Bilateral cooling type semiconductor laser system for medical beauty use |
| CN105226485A (en) * | 2015-10-23 | 2016-01-06 | 惠州市杰普特电子技术有限公司 | Laser radiating device |
| CN105226486A (en) * | 2015-10-23 | 2016-01-06 | 惠州市杰普特电子技术有限公司 | Laser cooling device |
| CN105246298A (en) * | 2015-10-23 | 2016-01-13 | 惠州市杰普特电子技术有限公司 | Laser heat conduction device |
| CN113953273A (en) * | 2021-10-29 | 2022-01-21 | 武汉锐科光纤激光技术股份有限公司 | Scanning method and device for object to be scanned, storage medium and electronic device |
| CN114883893A (en) * | 2022-04-06 | 2022-08-09 | 中国电子科技集团公司第十一研究所 | Pump device and laser emitter with same |
| WO2024000612A1 (en) * | 2022-06-30 | 2024-01-04 | 国科光芯(海宁)科技股份有限公司 | Semiconductor laser |
| CN117559226A (en) * | 2024-01-12 | 2024-02-13 | 北京凯普林光电科技股份有限公司 | Annular semiconductor laser |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2014079374A1 (en) * | 2012-11-22 | 2014-05-30 | 西安炬光科技有限公司 | Bilateral cooling type semiconductor laser system for medical beauty use |
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| CN105226486A (en) * | 2015-10-23 | 2016-01-06 | 惠州市杰普特电子技术有限公司 | Laser cooling device |
| CN105246298A (en) * | 2015-10-23 | 2016-01-13 | 惠州市杰普特电子技术有限公司 | Laser heat conduction device |
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| CN114883893A (en) * | 2022-04-06 | 2022-08-09 | 中国电子科技集团公司第十一研究所 | Pump device and laser emitter with same |
| WO2024000612A1 (en) * | 2022-06-30 | 2024-01-04 | 国科光芯(海宁)科技股份有限公司 | Semiconductor laser |
| CN117559226A (en) * | 2024-01-12 | 2024-02-13 | 北京凯普林光电科技股份有限公司 | Annular semiconductor laser |
| CN117559226B (en) * | 2024-01-12 | 2024-04-23 | 北京凯普林光电科技股份有限公司 | Annular semiconductor laser |
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Application publication date: 20111005 |