CN102509816A - Switch linear phase shifter based on micro electro mechanical system (MEMS) capacitance and inductance phase shifting unit - Google Patents
Switch linear phase shifter based on micro electro mechanical system (MEMS) capacitance and inductance phase shifting unit Download PDFInfo
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- CN102509816A CN102509816A CN2011103353478A CN201110335347A CN102509816A CN 102509816 A CN102509816 A CN 102509816A CN 2011103353478 A CN2011103353478 A CN 2011103353478A CN 201110335347 A CN201110335347 A CN 201110335347A CN 102509816 A CN102509816 A CN 102509816A
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Abstract
The invention relates to a switch linear phase shifter based on a micro electro mechanical system (MEMS) capacitance and inductance phase shifting unit, which comprises MEMS switches, a T-shaped node, a reference phase shifting coplanar waveguide transmission line, an MEMS capacitance and inductance phase shifting transmission line, a transmission line right-angled corner, an MEMS switch electrode, a lead wire, an isolating resistor and a medium substrate. The reference phase shifting coplanar waveguide transmission line and the phase shifting transmission line embedded into an MEMS capacitor and inductor form two transmission paths of the switch linear phase shifter, the MEMS switches are arranged on the T-shaped node and used for strobing the two transmission paths, and the transmission line right-angled corner is used for connecting two sections of transmission lines perpendicular to each other. The switch linear phase shifter based on the MEMS capacitance and inductance phase shifting unit has the advantages that a phase delay unit formed by the MEMS capacitor and inductor effectively reduces integral size of the phase shifter, and a small-sized multi-digit switch linear phase shifter based on the MEMS capacitance and inductance phase shifting unit can be obtained by connecting a plurality of switch linear phase shifters based on the MEMS capacitance and inductance phase shifting unit in cascading mode.
Description
Technical field
The invention belongs to microelectronic mechanical system in radio frequency (RF MEMS) field, be specifically related to a kind of switching wiring phase shifter of miniaturization, especially a kind of switching wiring phase shifter based on MEMS capacitor and inductor phase-shifting unit.
Background technology
Phase shifter is a most important subsystem in the phase control array, can adjust the phase place of ripple, is widely used in fields such as satellite communication, radar, guided missile controls.The MEMS phase shifter generally can be divided into distributed phase shifter, reflection-type phase shifter and switching wiring phase shifter.Distributed phase shifter is called DMTL (Distributed Microelectro-mechanical System Transmission Line) again; It is based on the transmission line that periodically loads discrete variable electric capacity; Distributed capacitance through increasing on the transmission line reduces its phase velocity, produces phase shift, and its design is relatively easy; But need parallelly connected a plurality of switches or electric capacity, make chip area bigger.The reflection-type phase shifter utilizes the phase place of coupler and transmission signals and reflected signal to carry out phase shift, the design more complicated, and coupler also can increase extra loss when high frequency.Switching wiring phase shifter utilizes mems switch controlled microwave signal to pass through from two different transmission lines of electrical length, obtains the different phase state, and its principle is simple, but traditional switching wiring phase shifter also can take bigger area.
Shown in Figure 1 is a traditional three-position switch line style phase shifter, is realized by microstrip line construction.In a phase-shifting unit, RF mems switch controlled microwave signal is selected through wherein one in the different transmission line of two electrical length.Short transmission lines is the transmission of phase line as a reference, and then microwave signal is the phase-shift value of this unit through long transmission lines poor with through than the resulting phase shift of short transmission line.Obtain bigger phase-shift value if desired, then need the length of corresponding increase than long transmission line.This three-position switch line style phase shifter can realize 2
3Individual phase shifting state, but, cause the chip area waste because different jayrator length are uneven, and the element length that phase-shift value is big is longer, and realize then need on substrate, punching with microstrip line, technology is comparatively complicated.
Summary of the invention
In order to overcome the deficiency of above-mentioned prior art, the object of the present invention is to provide a kind of switching wiring phase shifter based on MEMS capacitor and inductor phase-shifting unit, have size little, insert the characteristics that loss is low, isolation is high.
To achieve these goals, the technical scheme of the present invention's employing is:
A kind of switching wiring phase shifter based on MEMS capacitor and inductor phase-shifting unit, each phase-shifting unit is connected to form by the subdivision of two symmetries,
Each subdivision comprises a T type knot 2; The horizontal ends of T type knot 2 connects the input/output terminal 11 of signal; The upper end of T type knot 2 connects the tip side of first mems switch 101; The lower end of T type knot 2 connects the tip side of second mems switch 102, the anchor point termination MEMS capacitor and inductor phase shift transmission line 4 of first mems switch 101, and the other end of MEMS capacitor and inductor phase shift transmission line 4 connects the first transmission line right-angled corner 501; The anchor point end of second mems switch 102 connects with reference to jayrator coplanar waveguide transmission line 3, connects the second transmission line right-angled corner 502 with reference to the other end of jayrator coplanar waveguide transmission line 3;
Be connected with the second transmission line right-angled corner 502 through the first transmission line right-angled corner 501 between two subdivisions;
The first mems switch electrode 801 is connected the bottom electrode of first mems switch 101 of two subdivisions through first isolation resistance 901 and first lead-in wire 701;
The second mems switch electrode 802 is connected the bottom electrode of second mems switch 102 of two subdivisions through second isolation resistance 902 and second lead-in wire 702.
Constitute two paths of signal transmission with reference to jayrator coplanar waveguide transmission line 3 and MEMS capacitor and inductor phase shift transmission line 4; Mems switch electrode 8 is through the break-make of the isolation resistance 9 and the 7 control mems switches that go between, and makes microwave signal pass through T type knot 2 and mems switch and selects through a transmission paths wherein.
Said phase-shifting unit is arranged on the dielectric substrate 6, and dielectric substrate 6 can reduce substrate loss effectively for the floating glass substrate of boron.
Said isolation resistance 9 usefulness amorphous silicon materials are processed.
Be furnished with four air bridges 10 that are square on the said T type knot 2, be used to suppress the asymmetric and higher order mode that produces of co-planar waveguide ground wire; T type knot 2 adopts the step penalty method promptly to replace original transmitted line, the extra capacitor of coming make-up air bridge 10 to bring with thinner transmission line; The horizontal ends of T type knot 2 is provided with one section high resistant transmission line, and compensation T type knot 2 does not have the electric capacity that open stub produced of signal through holding.
Be respectively arranged with two air bridges 10 on the said first transmission line right-angled corner 501 and the second transmission line right-angled corner 502, be used to suppress the asymmetric and higher-order effect that produces of co-planar waveguide ground wire.
The said first transmission line right-angled corner 501 and the second transmission line right-angled corner 502 adopt the step penalty method, promptly replace leg-of-mutton corner with one section thin transmission line, the extra capacitor that make-up air bridge 10 brings.
Said MEMS capacitor and inductor phase shift transmission line 4 is based on coplanar waveguide structure, and the MEMS inductance is positioned at center signal line place, and bridge electric capacity places on the inductance, and two ends are fixed on the ground wire of both sides.
Said is one section common co-planar waveguide line with reference to jayrator coplanar waveguide transmission line 3, is made up of both sides ground wire and center signal line.
Said a plurality of phase-shifting unit cascade has just constituted Multi-bit phase shifter.
Compared with prior art, advantage of the present invention is:
Adopt MEMS capacitor and inductor phase shift transmission line; Effectively reduce the overall dimensions of phase shifter, used coplanar waveguide structure, avoided complicated via process; Select the series contact type mems switch; Make the mems switch area occupied minimum, carry out the step compensation, reduced loss effectively in right-angled corner and T type knot place.
Description of drawings
Fig. 1 is a traditional three-position switch line style phase shifter sketch map.
Fig. 2 is the switching wiring phase shifter sketch map of a unit of the present invention.
Fig. 3 is a MEMS capacitor and inductor phase-shifting unit enlarged diagram of the present invention.
Fig. 4 is a mems switch sketch map of the present invention.
Fig. 5 is three MEMS phase shifters of the present invention cascade structure sketch map.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is explained further details.
Referring to Fig. 1; It is a traditional three-position switch line style phase shifter; Its structure mainly comprises three switching wiring phase shifter unit, and each unit comprises RF mems switch 22, fixed phase transmission line 20 and postpone transmission line 23 that microwave signal input 21 is between RF mems switch 22 and fixed phase transmission line 20; Microwave signal output 24 and microwave signal input 21 spaces symmetry; Postponing transmission line 23 has bigger electrical length with respect to fixed phase transmission line 20, and RF mems switch 22 controlled microwave signals are selected to pass through a wherein transmission lines, if the phase deviation that microwave signal obtains through the fixed phase transmission line is θ
1, the phase deviation that obtains through the delay transmission line is θ
2, then the phase-shift value of this phase shifter is θ
2-θ
1
Referring to Fig. 2, be phase-shifting unit of the present invention, each phase-shifting unit is connected to form by the subdivision of two symmetries; Each subdivision comprises a T type knot 2; The horizontal ends of T type knot 2 connects the input/output terminal 11 of signal, and in order to signal is shunted, the upper end of T type knot 2 connects the tip side of first mems switch 101; The lower end of T type knot 2 connects the tip side of second mems switch 102, to reduce not have the length of open stub on the transmission line that signal passes through; Mems switch adopts series contact type switch; Area occupied is minimized; The anchor point termination MEMS capacitor and inductor phase shift transmission line 4 of first mems switch 101; The anchor point end that the other end of MEMS capacitor and inductor phase shift transmission line 4 connects the first transmission line right-angled corner, 501, the second mems switches 102 connects with reference to jayrator coplanar waveguide transmission line 3, connects the second transmission line right-angled corner 502 with reference to the other end of jayrator coplanar waveguide transmission line 3; The first mems switch electrode 801 is connected the bottom electrode of first mems switch 101 of two subdivisions through first isolation resistance 901 and first lead-in wire 701; The second mems switch electrode 802 is connected the bottom electrode of second mems switch 102 of two subdivisions through second isolation resistance 902 and second lead-in wire 702, controls the break-make of mems switch; Isolation resistance 9 is in order to isolate radiofrequency signal and drive electrode bypass, prevents crosstalking between the radiofrequency signal and driving direct voltage when the series contact type mems switch is in closed.Connect and compose a phase-shifting unit through the first transmission line right-angled corner 501 and the second transmission line right-angled corner 502 between two subdivisions, phase-shifting unit is arranged on the dielectric substrate 6, and dielectric substrate 6 can reduce substrate loss effectively for the floating glass substrate of boron.
Constitute two paths of signal transmission with reference to jayrator coplanar waveguide transmission line 3 and MEMS capacitor and inductor phase shift transmission line 4; Mems switch electrode 8 is through the break-make of the isolation resistance 9 and the 7 control mems switches that go between, and makes microwave signal pass through T type knot 2 and mems switch and selects through a transmission paths wherein.
Be furnished with four air bridges 10 that are square on the T type knot 2, be used to suppress the asymmetric and higher order mode that produces of co-planar waveguide ground wire; T type knot 2 adopts the step penalty method promptly to replace original transmitted line, the extra capacitor of coming make-up air bridge 10 to bring with thinner transmission line; The horizontal ends of T type knot 2 is provided with one section high resistant transmission line, and compensation T type knot 2 does not have the electric capacity that open stub produced of signal through holding.
Be respectively arranged with two air bridges 10 on the first transmission line right-angled corner 501 and the second transmission line right-angled corner 502, be used to suppress the asymmetric and higher-order effect that produces of co-planar waveguide ground wire.
The first transmission line right-angled corner 501 and the second transmission line right-angled corner 502 adopt the step penalty method, promptly replace leg-of-mutton corner with one section thin transmission line, the extra capacitor that make-up air bridge 10 brings.
MEMS capacitor and inductor phase shift transmission line 4 is based on coplanar waveguide structure, and the MEMS inductance is positioned at center signal line place, and bridge electric capacity places on the inductance, and two ends are fixed on the ground wire of both sides.
With reference to jayrator coplanar waveguide transmission line 3 is one section common co-planar waveguide line, is made up of both sides ground wire and center signal line.
Connect through upper strata metal 12 between two sections co-planar waveguide ground wires.
Referring to Fig. 3, be MEMS capacitor and inductor phase-shifting unit enlarged drawing of the present invention, its structure mainly comprises snakelike inductance 13, air bridges electric capacity 14, anchor point 15, co-planar waveguide ground wire 16, substrate 6.Select snakelike inductance 13 to avoid stereochemical structure, be convenient to the making of its top air bridges electric capacity 14, air bridges electric capacity 14 is placed snakelike inductance 13 tops, effectively dwindled chip area.Snakelike inductance 13 and 14 combinations of air bridges electric capacity are realized the phase shift to microwave signal, with common co-planar waveguide holding wire mutually specific energy in short distance, realize bigger phase-shift value.
Referring to Fig. 4; Be the mems switch sketch map, its structure mainly comprises mems switch top electrode 1a, mems switch bottom electrode 1b, mems switch contact salient point 1c, mems switch anchor point 1d, microwave signal transmission line 1e, lead-in wire 7, mems switch electrode 8, isolation resistance 9, dielectric substrate 6, dielectric 16.Mems switch top electrode 1a links to each other with microwave signal transmission line 1e through mems switch anchor point 1d; Mems switch contact salient point 1c is located on the microwave signal transmission line 1e, and is corresponding with the free end of mems switch top electrode 1a, and mems switch bottom electrode 1b is located on the dielectric substrate 6; Link to each other with lead-in wire 7; Dielectric 16 is located between mems switch top electrode 1a and the mems switch bottom electrode 1b, and isolation resistance 9 is located on the dielectric substrate 6 with lead-in wire 7, by 16 coverings of dielectric; Mems switch electrode 8 is located on the dielectric substrate 6, is not insulated 16 coverings of medium.
Referring to Fig. 5, for three MEMS phase shifters of the present invention sketch map, to form by three phase-shifting unit cascades, its structure mainly comprises 180 ° of phase-shifting unit A, 90 ° of phase-shifting unit B, 45 ° of phase-shifting unit C; Three unit phase cascades constitute the three-position switch line style phase shifter based on MEMS capacitor and inductor phase-shifting unit, to the control of microwave signal through the path, can realize 0 °/360 ° through mems switch; 45 °, 90 °, 135 °, 180 °; 225 °, 270 °, 315 ° phase shift.When mems switch 1-1,1-2,1-3,1-4,1-5,1-6 connect, when 1-12,1-11,1-10,1-9,1-8,1-7 disconnection, can realize 0 °/360 ° phase shift; When mems switch 1-1,1-2,1-3,1-4,1-8,1-7 connect, when 1-12,1-11,1-10,1-9,1-5,1-6 disconnection, can realize 45 ° phase shift; When mems switch 1-1,1-2,1-10,1-9,1-5,1-6 connect, when 1-12,1-11,1-3,1-4,1-8,1-7 disconnection, can realize 90 ° phase shift; When mems switch 1-1,1-2,1-10,1-9,1-8,1-7 connect, when 1-12,1-11,1-3,1-4,1-5,1-6 disconnection, can realize 135 ° phase shift; When mems switch 1-12,1-11,1-3,1-4,1-5,1-6 connect, when 1-1,1-2,1-10,1-9,1-8,1-7 disconnection, can realize 180 ° phase shift; When mems switch 1-12,1-11,1-3,1-4,1-8,1-7 connect, when 1-1,1-2,1-10,1-9,1-5,1-6 disconnection, can realize 225 ° phase shift; When mems switch 1-12,1-11,1-10,1-9,1-5,1-6 connect, when 1-1,1-2,1-3,1-4,1-8,1-7 disconnection, can realize 270 ° phase shift; When mems switch 1-12,1-11,1-10,1-9,1-8,1-7 connect, when 1-1,1-2,1-3,1-4,1-5,1-6 disconnection, can realize 315 ° phase shift.
Claims (10)
1. switching wiring phase shifter based on MEMS capacitor and inductor phase-shifting unit, each phase-shifting unit is connected to form by the subdivision of two symmetries, it is characterized in that,
Each subdivision comprises a T type knot (2); The horizontal ends of T type knot (2) connects the input/output terminal (11) of signal; The upper end of T type knot (2) connects the tip side of first mems switch (101); The lower end of T type knot (2) connects the tip side of second mems switch (102), and the anchor point termination MEMS capacitor and inductor phase shift transmission line (4) of first mems switch (101), the other end of MEMS capacitor and inductor phase shift transmission line (4) connect the first transmission line right-angled corner (501); The anchor point end of second mems switch (102) connects with reference to jayrator coplanar waveguide transmission line (3), connects the second transmission line right-angled corner (502) with reference to the other end of jayrator coplanar waveguide transmission line (3);
Be connected with the second transmission line right-angled corner (502) through the first transmission line right-angled corner (501) between two subdivisions;
The first mems switch electrode (801) is connected the bottom electrode of first mems switch (101) of two subdivisions through first isolation resistance (901) and first lead-in wire (701);
The second mems switch electrode (802) is connected the bottom electrode of second mems switch (102) of two subdivisions through second isolation resistance (902) and second lead-in wire (702).
2. the switching wiring phase shifter based on MEMS capacitor and inductor phase-shifting unit according to claim 1 is characterized in that, said phase-shifting unit is arranged on the dielectric substrate (6).
3. the switching wiring phase shifter based on MEMS capacitor and inductor phase-shifting unit according to claim 1; It is characterized in that; Be furnished with four air bridges (10) that are square on the said T type knot (2), be used to suppress the asymmetric and higher order mode that produces of co-planar waveguide ground wire.
4. the switching wiring phase shifter based on MEMS capacitor and inductor phase-shifting unit according to claim 3 is characterized in that, the extra capacitor that said T type knot (2) adopts step penalty method make-up air bridge (10) to bring.
5. the switching wiring phase shifter based on MEMS capacitor and inductor phase-shifting unit according to claim 3; It is characterized in that; The horizontal ends of said T type knot (2) is provided with one section high resistant transmission line, and compensation T type knot (2) does not have the electric capacity that open stub produced of signal through holding.
6. the switching wiring phase shifter based on MEMS capacitor and inductor phase-shifting unit according to claim 1; It is characterized in that; Be respectively arranged with two air bridges (10) on the said first transmission line right-angled corner (501) and the second transmission line right-angled corner (502), be used to suppress the asymmetric and higher-order effect that produces of co-planar waveguide ground wire.
7. the switching wiring phase shifter based on MEMS capacitor and inductor phase-shifting unit according to claim 6; It is characterized in that the extra capacitor that the said first transmission line right-angled corner (501) and the second transmission line right-angled corner (502) adopt step penalty method make-up air bridge (10) to bring.
8. the switching wiring phase shifter based on MEMS capacitor and inductor phase-shifting unit according to claim 1; It is characterized in that; Said MEMS capacitor and inductor phase shift transmission line (4) is based on coplanar waveguide structure; The MEMS inductance is positioned at center signal line place, and bridge electric capacity places on the inductance, and two ends are fixed on the ground wire of both sides.
9. the switching wiring phase shifter based on MEMS capacitor and inductor phase-shifting unit according to claim 1 is characterized in that, said is one section common co-planar waveguide line with reference to jayrator coplanar waveguide transmission line (3), is made up of both sides ground wire and center signal line.
10. the switching wiring phase shifter based on MEMS capacitor and inductor phase-shifting unit according to claim 1 is characterized in that, constitutes Multi-bit phase shifter by said a plurality of phase-shifting unit cascades.
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| CN201110335347.8A CN102509816B (en) | 2011-10-28 | 2011-10-28 | Switch linear phase shifter based on micro electro mechanical system (MEMS) capacitance and inductance phase shifting unit |
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| CN201110335347.8A CN102509816B (en) | 2011-10-28 | 2011-10-28 | Switch linear phase shifter based on micro electro mechanical system (MEMS) capacitance and inductance phase shifting unit |
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Cited By (8)
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| CN103746157A (en) * | 2014-01-24 | 2014-04-23 | 中国工程物理研究院电子工程研究所 | Phase shifting unit and MEMS (micro-electromechanical system) terahertz phase shifter composed of same |
| CN104868868A (en) * | 2015-04-28 | 2015-08-26 | 中国电子科技集团公司第五十五研究所 | Micro-electromechanical system (MEMS) stepping type digital attenuator |
| CN104993193A (en) * | 2015-07-28 | 2015-10-21 | 中国工程物理研究院电子工程研究所 | Hybrid MEMS phase shifter |
| CN105845513A (en) * | 2016-04-22 | 2016-08-10 | 清华大学 | Graphene radio frequency mechanical switch based on quartz substrate coplanar waveguide |
| CN110112515A (en) * | 2019-06-17 | 2019-08-09 | 苏州希美微纳***有限公司 | A kind of mixing phase shifter based on mems switch |
| CN111641011A (en) * | 2020-06-05 | 2020-09-08 | 深圳大学 | Metal waveguide array and regulating device using same |
| CN112490612A (en) * | 2020-11-02 | 2021-03-12 | 许昌学院 | Single-negative metamaterial heterojunction with slits loaded on two sides based on coplanar waveguide |
| CN115377642A (en) * | 2022-08-23 | 2022-11-22 | 中北大学 | High-precision linear nine-bit delayer based on MEMS switch |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103746157A (en) * | 2014-01-24 | 2014-04-23 | 中国工程物理研究院电子工程研究所 | Phase shifting unit and MEMS (micro-electromechanical system) terahertz phase shifter composed of same |
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| CN110112515A (en) * | 2019-06-17 | 2019-08-09 | 苏州希美微纳***有限公司 | A kind of mixing phase shifter based on mems switch |
| CN110112515B (en) * | 2019-06-17 | 2024-05-14 | 苏州希美微纳***有限公司 | Hybrid phase shifter based on MEMS switch |
| CN111641011A (en) * | 2020-06-05 | 2020-09-08 | 深圳大学 | Metal waveguide array and regulating device using same |
| CN112490612A (en) * | 2020-11-02 | 2021-03-12 | 许昌学院 | Single-negative metamaterial heterojunction with slits loaded on two sides based on coplanar waveguide |
| CN115377642A (en) * | 2022-08-23 | 2022-11-22 | 中北大学 | High-precision linear nine-bit delayer based on MEMS switch |
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