CN102192908A - Polysilicon thin film inspection method and device thereof - Google Patents
Polysilicon thin film inspection method and device thereof Download PDFInfo
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- CN102192908A CN102192908A CN2011100409698A CN201110040969A CN102192908A CN 102192908 A CN102192908 A CN 102192908A CN 2011100409698 A CN2011100409698 A CN 2011100409698A CN 201110040969 A CN201110040969 A CN 201110040969A CN 102192908 A CN102192908 A CN 102192908A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1306—Details
- G02F1/1309—Repairing; Testing
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
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Abstract
The invention provides a polysilicon thin film inspection method and a device thereof. In order to optically observe the surface state of a polysilicon thin film and to inspect the crystalline state of the same, the method of the invention comprises the following steps of: irradiating a substrate, on the surface of which a polysilicon thin film is formed, with light; taking an image of first-order diffracted light generated on the surface of the polysilicon thin film irradiated with light; processing the taken image of the first-order diffracted light to inspect the crystalline state of the polysilicon thin film; and then performing image processing and displaying the inspected image of the first-order diffracted light and inspection result information on the same screen.
Description
Technical field
The present invention relates to check by method and the device thereof of laser annealing to the crystalline state of the polysilicon membrane after carrying out multiple crystallization at the amorphous silicon that forms on the substrate.
Background technology
In order to ensure high speed motion, by excimer laser the part of the amorphous silicon that forms is carried out process annealing on substrate, in the zone of polycrystallization, be formed on the thin film transistor (TFT) (TFT) that uses in liquid crystal display cells or the organic EL etc.
So, make under the situation of its polycrystallization the part of amorphous silicon being carried out process annealing, require to carry out equably polycrystallization by excimer laser, but in fact because deviation takes place in crystallization sometimes in the influence of LASER Light Source change.
Therefore, method as the generation state of the deviation that monitors this silicon crystallization, open the spy and to disclose following technology in the 2002-305146 communique: pulsed laser irradiation is carried out laser annealing to semiconductor film, and to laser radiation zone examination light, detection from the reflected light of substrate, is confirmed the state of the crystallization of semiconductor film by the inspection light of irradiation according to this catoptrical Strength Changes.
In addition, open the spy and to disclose following technology in the flat 10-144621 communique: to the amorphous silicon examination light before the irradiating laser, detect its reflected light or see through light, in the process of amorphous silicon irradiating laser, going back examination light, detect its reflected light or see through light, detection before irradiating laser and the irradiating laser process reflected light or the difference that sees through light intensity when becoming maximum to turning back to the reflected light before the irradiating laser or seeing through elapsed time of light intensity, the state of monitoring laser annealing.
In addition, open the spy and to disclose following technology in the 2006-19408 communique: be varied in the zone of polysilicon the amorphous silicon that forms on substrate being annealed by excimer laser, from the direction of 10～85 degree substrate surface is shone visible light, with the scope of irradiation equal angular in camera detection of reflected light by ground connection, check the configuration status of the projection of crystal surface according to this catoptrical variation.
In addition, open the spy and to disclose following technology in the 2001-308009 communique: the polysilicon membrane examination light that amorphous silicon film irradiation excimer laser is formed, by the diffraction light of diffraction light detector monitors from polysilicon membrane, utilization is higher than characteristic from the diffraction/scattered intensity in the low zone of crystallinity from the diffraction light intensity that the zone produced of the trickle concaveconvex structure of the high rule of the crystallinity of polysilicon membrane, checks the state of polysilicon membrane.
Known on the surface of the polysilicon membrane (polysilicon film) that forms by amorphous silicon membrane irradiation excimer laser is annealed, produce trickle concavo-convex periodically according to certain.And, these trickle projections have reflected the crystalline degree of polysilicon membrane, have uniformly certain on the surface of (the poly grains size is consistent) polysilicon membrane in crystalline state and form trickle concavo-convexly regularly periodically, be irregularly formed trickle concavo-convex on the surface of (poly grains is not of uniform size to be caused) polysilicon membrane that the crystalline state homogeneity is low.
Like this as the method for surface state of the inspection polysilicon membrane of reflection crystalline state in reflected light, opening the reflection of light light intensity of only having put down in writing in the 2002-305146 communique according to the zone after shining laser annealing the spy changes, confirm the state of the crystallization of semiconductor film, but record does not detect the diffraction light that reflects crystalline state.
In addition, open the technology of carrying out state that reflected light and the reflected light before the annealing from the laser radiation zone in the laser annealing monitor annealing of having put down in writing in the flat 10-144621 communique relatively the spy, but to open the 2002-305146 communique the same with the spy, and record detects the diffraction light of reflection crystalline state.
On the other hand, open the variation of having put down in writing in the 2006-19408 communique according to based on the light of the configuration reflection of the projection of carrying out the polysilicon membrane surface that laser annealing forms the spy, check the crystalline quality of polysilicon, but record detects the diffraction light that the projection owing to the polysilicon membrane surface produces.
In addition, open the spy and to have put down in writing in the 2001-308009 communique because the diffraction light that the projection on the polysilicon membrane surface that forms by laser annealing produces, but for monitoring the strength grade of the diffraction light that is detected by the diffraction light detecting device, check the device of the state of polysilicon film, record detects the image on polysilicon membrane surface, the state of the projection in certain field on observation polysilicon membrane surface.
Summary of the invention
In order to solve above-mentioned prior art problem, the object of the present invention is to provide a kind of inspection method and device thereof of polysilicon membrane, it can detect the image on polysilicon membrane surface, observes the state on polysilicon membrane surface, checks the crystalline state of polysilicon membrane.
In order to solve above-mentioned prior art problem, in the present invention, the polysilicon membrane testing fixture possesses: light irradiation unit, and it is to having formed the substrate irradiates light of polysilicon membrane from the teeth outwards; Image unit, it takes the picture of the single order diffraction light that produces from the surface of the polysilicon membrane that has been shone light by this light irradiation unit; Graphics processing unit, its picture to the described single order diffraction light that this image unit is taken is handled, and checks the crystalline state of polysilicon membrane; And output unit, the picture of the single order diffraction light after it handles this graphics processing unit together is presented on the picture with the result's of inspection information, to having formed the substrate irradiates light of polysilicon membrane from the teeth outwards, shooting is from the picture of the single order diffraction light of the surface generation of the polysilicon membrane of illuminated light, image to the picture of the single order diffraction light that photographs is handled, check the crystalline state of polysilicon membrane, the picture that will handle the single order diffraction light that is checked through to image together is presented on the picture with the result's of inspection information.
In addition, in order to solve above-mentioned prior art problem, in the present invention, the polysilicon membrane testing fixture possesses: light irradiation unit, and it has been to having formed the optically transparent substrate of polysilicon membrane from the teeth outwards, from a side irradiates light of a face of this substrate; Image unit, it takes the picture at the single order diffraction light of the side generation of the another side of substrate, the picture of the single order diffraction light that produces in a side of the another side of described substrate is by light transmission substrate and the polysilicon membrane of light irradiation unit from the side irradiation of a face of substrate, produces at the light of a side outgoing of the another side of substrate; Graphics processing unit, its picture that image unit is taken the single order diffraction light that obtains is handled, and checks the crystalline state of polysilicon membrane; And output unit, the picture of the single order diffraction light after it handles graphics processing unit together is presented on the picture with the result's of inspection information, to the optically transparent substrate that formed polysilicon membrane from the teeth outwards a side irradiates light from a face of this substrate, shooting is at the picture of the single order diffraction light of the side generation of the another side of substrate, at the picture of the single order diffraction light that a side of the another side of substrate produces by from the light of the side irradiation of a face of substrate, seeing through substrate and polysilicon membrane, at the light of a side outgoing of the another side of substrate and produce, picture to the single order diffraction light that photographs is handled, check the crystalline state of polysilicon membrane, the result's of the picture of the single order diffraction light after handling and inspection information together is presented on the picture.
According to the present invention, can be with the degree of precision inspection by the anneal crystalline state of formed polysilicon membrane of excimer laser, can keep LCD panel high-quality with glass substrate.
Description of drawings
Fig. 1 is the SEM image of polysilicon membrane.
Fig. 2 is the block diagram that is used to illustrate the summary structure of testing fixture integral body.
Fig. 3 is the block diagram of structure of summary that is used to illustrate the inspection unit of embodiment 1.
Fig. 4 A is the shooting order of substrate is taken in expression for the crystalline state of checking polysilicon membrane a process flow diagram.
Fig. 4 B is that expression is handled the image that photographs for the crystalline state of checking polysilicon membrane, the process flow diagram of the order of the Flame Image Process of detection defect part.
Fig. 5 is the block diagram of summary structure that is used for illustrating the inspection unit of embodiment 2.
Fig. 6 is the front view of the picture of expression check result.
Fig. 7 is the block diagram of summary structure that is used for illustrating the inspection unit of embodiment 3.
Embodiment
As embodiments of the present invention, the example of the device that is used to check the polysilicon membrane that forms on glass substrate in LCD panel is described.
The LCD panel of checking object with glass substrate 1 (below be recited as substrate) in, on substrate, form amorphous silicon membrane.Scan by a part of area illumination excimer laser, heat and melt the amorphous silicon of the part of irradiation excimer laser one by one this amorphous silicon membrane.After excimer laser scanning, the amorphous silicon of fusing cools off gradually, and silicon carries out polycrystallization, crystalline growth under the state of polysilicon.In the present invention, check the normal film of state of the crystallization grain size unanimity that whether forms this polysilicon.
Fig. 1 represents the amorphous silicon that forms on glass substrate 11 is carried out quasi-molecule laser annealing, becomes the synoptic diagram in cross section of substrate 1 of state of polysilicon membrane 12 of the state of crystallization grain size unanimity.On the surface of polysilicon membrane, forming projection (also on right angle orientation, forming projection in the drawing at Fig. 1) on the surface of film with certain spacing with the spacing of constant.The spacing of the projection on this film surface changes according to the crystallization grain size of polysilicon membrane.
When to having the sample irradiation light time of so periodic pattern (jut during Fig. 1), from periodic pattern generating diffraction light, can observe does not have disorderly diffraction light picture.The mode that this diffraction light produces depends on the cycle of pattern or the light wavelength of illumination.On the other hand, though not shown, in the fluctuation of the crystallization grain size of polysilicon membrane, under the spacing of the protrusion of surface situation at random, from the diffraction light that the surface of polysilicon membrane produces, getting muddled by illumination, diffraction light looks like to get muddled.
A kind of method and device thereof are provided in the present invention, and it throws light on to polysilicon membrane, takes the picture of the diffraction light of the concavo-convex generation by the film surface, and the image of the diffraction light that photographs is handled, and estimates the crystalline state of polysilicon membrane thus.
Fig. 2 represents all structure of LCD panel of the present invention with the polysilicon membrane testing fixture 100 of glass substrate.
Testing fixture 100 is made of substrate loading part 110, inspection portion 120, substrate unloading portion 130, inspection portion data processing/control part 140 and whole control part 150.
Check the LCD panel glass substrate (hereinafter referred to as substrate) 1 of object, on glass substrate, formed the film of amorphous silicon, check in the operation not long ago of operation at this, a part of area illumination excimer laser is scanned heating, to the overheated zone policrystalline siliconization of annealing, become the state of polysilicon membrane thus.Testing fixture 100 is taken the surface of substrate 1, and whether investigation has normally formed this polysilicon membrane.
To check that by not shown supply unit object substrate 1 is placed in the loading part 110.The substrate 1 that will be placed on loading part 110 by the not shown supply unit by whole control part 150 controls is carried to inspection portion 120.In inspection portion, possess inspection unit 121, control, check the state of the polysilicon membrane that on the surface of substrate 1, forms by inspection data processing/control module 140.Handle by testing fixture 121 detected data the state of evaluation formed polysilicon membrane on the surface of substrate 1 by checking data processing/control device 140.
To check that by the not shown supply unit of whole control part 150 controls the substrate 1 that finishes is transported to unloading portion 130 from inspection portion 120, take out from testing fixture 100 by not shown processing unit.In addition, Fig. 2 is illustrated in the structure that possesses an inspection unit 121 in the inspection portion 120, but also can be for more than two or three according to the area or the configuration of the polysilicon membrane of the size of the substrate 1 of checking object or formation.
Fig. 3 represents the structure of the inspection unit 121 of inspection portion 120.
Detecting unit 121 is made of lamp optical system 200, image pickup optical system 220, substrate platform 240 and inspection portion data processing/control part 140, and inspection portion data processing/control device 140 is connected with whole control part 150 shown in Figure 2.
Lamp optical system 200 possesses light source 201, collector lens 202, wavelength filter 203, Polarization filter 204 and the cylindrical lens 205 of the light of emission multi-wavelength, these devices are accommodated in the lens barrel portion 210, and lens barrel portion 210 is supported by a pair of guide pole 211.
(for example the light of 300nm～700nm) for example uses halogen lamp, xenon lamp etc. to the frequency widely of light source 201 emission from the ultraviolet region to the viewing area.
Image pickup optical system 220 possesses object lens 221, wavelength filter 222, Polarization filter 223, imaging len 224 and imageing sensor 225, and these devices all are accommodated in the lens barrel portion 230.
223 pairs of light that see through the specific wavelength of wavelength selective filters 222 of Polarization filter are adjusted its polarization state.
Imaging len 224 is used for the optical image from the single order diffraction light on the surface of substrate 1 is carried out imaging, is formed on the picture of adjusting the light behind the polarization states through the light of the specific wavelength of wavelength selective filters 222 by Polarization filter 223.
Above substrate stage 240 will check that object substrate 1 is placed on, can in the XY plane, move by not shown driver element.
Check that data processing/control part 140 possesses: A/D converter section 141, its analog picture signal from imageing sensor 225 outputs is converted to data image signal; Image processing part 142, the data image signal after it is changed A/D is handled; Determining defects portion 143, its data image signal after to Flame Image Process is handled, and judges defective according to image feature amount; Input and output portion 145, it possesses the display frame 146 of the information of exporting the defective that determines; And control part 147, it is controlled image processing part 142, determining defects portion 143, input and output portion 145, light source 201, imageing sensor 225, XY platform 240.In addition, control part 147 is connected with whole control part 150.
By such structure, lamp optical system 200 is thrown light on from the top to the substrate 1 that is placed on the substrate stage 240, by the picture of image pickup optical system 220 shootings from the single order diffraction light of substrate 1 generation of illumination, handle the state of the crystallization of the polysilicon membrane that inspection forms by checking data processing/control part 140 on substrate 1.
Then, the inspection unit 121 by structure shown in Figure 3 is described, checks the method for the state of the polysilicon membrane of polycrystallization by on substrate 1, carrying out quasi-molecule laser annealing.
At first, before checking, use the substrate 1 that is pre-formed polysilicon membrane, set optical condition.The optical condition that should set is: the illumination wavelengths based on wavelength filter 203 of lamp optical system 200, the polarization conditions of Polarization filter 204 and along the setting angle of the image pickup optical system 220 of guide bar 231, the detection wavelength based on wavelength filter 222 of image pickup optical system 220, based on the detection polarisation of light condition of Polarization filter 223, based on image space of the single order diffraction light picture of imaging len 224 etc.These conditions are observed the single order diffraction light picture that the substrate 1 by lamp optical system 200 illuminations obtains by show image pickup optical system 220 in the display frame 146 of input and output portion 145, and adjust so that can obtain the high single order diffraction light of contrast and look like to set.
Then, illustrate in inspection under the optical condition that sets by the flow process of the processing of the inspection area of the formed polysilicon membrane of annealing of the excimer laser on the substrate 1.In checking processing, has the presumptive area of taking substrate or shooting order of comprehensively taking and the image processing procedure of the image that photographs being handled, detected defect part.
At first, use Fig. 4 A that shooting is described in proper order.
At first, by control part 147 control XY platforms 240,, substrate 1 is set to initial position (inspection starting position) (S401) so that the inspection starting position of the inspection area of polysilicon membrane enters in the visual field of image pickup optical system 220.
Then, by 200 pairs of polysilicon membrane illuminations of lamp optical system (S402), control by control part 147 and to make XY platform 240 begin to move, so that the camera watch region of image pickup optical system 220 moves (S403) along the inspection area of the polysilicon membrane that is thrown light on constant speed.
When XY platform 240 is moved with constant speed, by the picture (S404) of image pickup optical system 220 shootings by the single order diffraction light of the concavo-convex generation on the film surface of the long inspection area of a direction of the polysilicon membrane of lamp optical system 200 illuminations, from imageing sensor 225 output simulating signals, be input to the A/D converter section 141 of detection data processing/control part 140.To be input to image processing part 142 by the digital signal of A/D converter section 141 conversions, and use the positional information of the XY platform 240 that obtains via control part 147 to generate data image signal (S405).Repeat above operation and finish (S406) up to the inspection area of delegation.
Then, check the regional adjacent inspection area (S407) whether have with Insp'd delegation, when having adjacent inspection area, the XY platform is moved to adjacent inspection area (S408), repeats the step that begins from S403.When inspection is all finished in the zone that should check, stop to move (S409) of XY platform, close illumination (S410) and finish the shooting order.
Then, the image processing procedure that uses Fig. 4 B explanation that the digital picture that obtains in the shooting order is handled.
Digital picture in the shooting order generates in the step (S405), the digital picture that image processing part 142 is generated is input to determining defects portion 143 (S421), carry out pre-service (S422) such as light and shade (shading) correction, equalization processing, from carried out this pretreated image, extract image feature amount (S423), this image feature amount that extracts and predefined reference data are compared, judge defective (S424).The Digital Image Data that comprises the defective that determines is sent to input and output portion 145, the positional information of image on substrate 1 of single order diffraction light is presented at (S425) on the display part 146, finish image processing procedure.On the image of the single order diffraction light that shows on this display part 146, can show the zone that is judged to be defective by determining defects portion 143 distinctively with normal zone.In addition, corresponding with the determining defects benchmark after this changes when input and output portion 145 input has changed the determining defects benchmark, defect area also changes and shows.
Fig. 6 is illustrated in an example of the check result display frame 600 that shows in the display part 146.
Check result display frame 600 is presented at following content on the picture as shown in Figure 6: the substrate specifying part 601 of specifying the display object substrate; The execution button 602 of the demonstration of specified substrate is carried out in indication; The substrate that shows all single order diffraction light pictures of specified substrate all looks like viewing area 603; Specify amplification in all single order diffraction light pictures of the substrate that substrate all shows as viewing area 603, that amplify the zone that shows to show designating unit 604; The single order diffraction light picture that amplifies the single order diffraction light picture that shows the zone of passing through 604 appointments of amplification demonstration designating unit amplifies viewing area 605; Demonstration the signal longitudinally that amplifies the single order diffraction light picture that shows in the viewing area 605 at single order diffraction light picture is added up to and signal vertically and signal display part 606; Demonstration the horizontal signal that amplifies the single order diffraction light picture that shows in the viewing area 605 at single order diffraction light picture is added up to and signal laterally and signal display part 607; And the check result display part 608 of the check result of display base plate.In all single order diffraction light pictures of the substrate that substrate all shows as viewing area 603, emphasize to show the result who judges by determining defects portion 143.That is, by be judged as normal part and compare and change color ground and show the zone that is judged to be defective by determining defects portion 143.
By adopting above-mentioned structure to check, thus according to present embodiment 1 can degree of precision ground check by the anneal crystalline state of formed polysilicon membrane of excimer laser, can keep LCD panel high-quality with glass substrate.
In addition, in present embodiment 1, the structure that wavelength filter and Polarization filter are arranged among lamp optical system 200 and image pickup optical system 220 both sides is illustrated, but these might not need to be arranged in both sides' the optical system, for example also wavelength filter and Polarization filter can only be set in lamp optical system 200, or wavelength filter and Polarization filter only are set in image pickup optical system 220.In addition, also can only use a certain side in wavelength filter and the Polarization filter.
In addition, come the structure in zone long on the direction on the illuminating board 1 to be illustrated by in lamp optical system 200, using cylindrical lens 205, but it is replaced as common round lens also can obtain effect same.
In addition, in present embodiment 1, illustrated according to Fig. 3 lamp optical system 200 has been configured on relative substrate 1 vertical direction, from the structure of throwing light on respect to substrate 1 vertical direction, but lamp optical system 200 is tilted with respect to substrate 1, from the directional lighting that substrate 1 is tilted, by the single order diffraction light picture of image pickup optical system 220 shootings from substrate 1.
(embodiment 2)
When the polysilicon membrane that passes through the quasi-molecule laser annealing polycrystallization on the substrate 1 being thrown light on, as mentioned above, produce the scattered light corresponding with the crystalline state of polysilicon membrane by illumination light.
For example,, formed under the state of trickle projection, the light time of illumination wavelength 500nm, on the optical axis direction with respect to normal reflection light tilts 90 directions of spending, produced the single order diffraction light in the spacing with 500nm on the polysilicon membrane by quasi-molecule laser annealing.In addition, when the annealing conditions of excimer laser changes, when on polysilicon membrane, having formed trickle projection, on approximately tilting the directions of 40 degree, the optical axis direction with respect to normal reflection light produces the single order diffraction light that produces by illumination with the spacing of 800nm.If it is big that the interval of projection further becomes, then the pitch angle with respect to the single order diffraction light of normal reflection direction of light further diminishes, in order to tackle various projection spacings, the scope that detects the single order diffraction light needs can cover at normal reflection direction of light 5 to be spent to the scope of 90 degree.
Like this, for according to the crystallization grain size or the illumination light wavelength, the angle that the single order diffraction light produces changes, and can change the unify relative angle configuration of image pickup optical system of illumination optical system if constitute, and then can tackle the multiple size of the spacing of trickle projection.But this moment, if the image pickup optical system of as embodiment 1 illumination optical system being unified is configured in the same side of substrate 1, then generation interference each other.Therefore must constitute the illumination optical system image pickup optical system of unifying by the optical system of complexity.
Therefore, in second embodiment, explanation will be configured in the inspection unit 122 that inspection unit 121 in the test section 120 of testing fixture shown in Figure 2 100 is replaced as structure shown in Figure 5.The structure of inspection unit 122 as shown in Figure 5, the back side that lamp optical system 500 is configured in substrate 1 from the back side to substrate 1 irradiating illumination light, the image pickup optical system 520 of surface one side by being configured in substrate 1 detects light by seeing through substrate from the diffraction light of periodic pattern generating, can tackle the various sizes of the spacing of the fine protrusions that forms on polysilicon membrane.
By disposing lamp optical system 500 and image pickup optical system 520 like this with respect to substrate 1, can be between lamp optical system 500 and image pickup optical system 520 the structural interference moral of generation device problem, therefore can realize the change of the relative angle configurations of lamp optical system 500 and image pickup optical system 520 with comparalive ease.
Lamp optical system 500 has the lamp optical system 200 essentially identical structures with explanation in embodiment 1, the light source 501, optically focused camera lens 502, wavelength filter 503, Polarization filter 504 and the cylindrical lens 505 that possess the light of emission multi-wavelength, these are incorporated in lens barrel portion 510, support lens barrel portion 510 by a pair of guide bar 511.
(for example the light of 300nm～700nm) for example uses halogen lamp, xenon lamp etc. to the frequency widely of light source 501 emission from the ultraviolet region to the viewing area.
The polarized state of light that Polarization filter 504 controls are thrown light on to substrate 1 changes the illumination polarized state of light, so that can be according to the high image of state-detection contrast of the polysilicon membrane that forms on the substrate 1 of checking object.
Image pickup optical system 520 have with embodiment 1 in the explanation image pickup optical system 220 essentially identical structures, possess: object lens 521, wavelength filter 522, Polarization filter 523, imaging len 524 and imageing sensor 525, these devices are incorporated in the lens barrel portion 530, support lens barrel portion 530 by a pair of guide rod 531.
521 pairs of diffraction lights (single order diffraction light) that produce from the substrate 1 by lamp optical system 500 illuminations of object lens are assembled, and have bigger NA (numerical apertures of lens) in order to assemble diffraction light expeditiously.
524 pairs of optical images from the single order diffraction light on the surface of substrate 1 of imaging len carry out imaging, and the picture that the light of the specific wavelength that sees through wavelength selective filters 522 is adjusted the light behind the polarization states by Polarization filter 523 carries out imaging.
Above substrate stage 540 will check that object substrate 1 is placed on, can in the XY plane, move by not shown driver element.Substrate stage 540 is provided with blank part 541 at central portion, by periphery supporting substrate 1.
Lamp optical system 500 is configured in the bottom of substrate stage 540, is placed on substrate 1 on the substrate stage 540 from back lighting by blank part 541.
By such structure, when the light source 501 emission light from lamp optical system 500, during from the back lighting of substrate 1, illumination light sees through the glass material of substrate 1, and sees through the silicon thin film that forms on substrate 1.At this moment, when to a silicon fiml part pass through that excimer laser is annealed and when throw light in the zone of polycrystallization, produce the corresponding scattered light of state with polysilicon membrane, promptly as described in Example 1, by on polysilicon membrane, producing the diffraction light of the high-order that comprises the single order diffraction light with the formed microspike of constant spacing.Take the picture of this diffraction light by image pickup optical system 520.
The signal that the picture of image pickup optical system 520 these diffraction light of shooting is got carries out the A/D conversion by the A/D converter 541 of inspection portion data processing/control part, form digital picture by image processing part 542, judge defective by determining defects portion 543, the action that the result is presented at processing in the display frame 546 of input and output portion 545 and control part 547 is identical with explanation in embodiment 1, therefore omits.
In addition, shooting among the embodiment 2 order and image processing procedure with in embodiment 1, use illustrated identical of Fig. 4 A and B, therefore omission explanation.
In the structure in present embodiment shown in Figure 5, the lens barrel 510 of lamp optical system 500 becomes can be along a pair of guide bar 511, surface with substrate 1 is the structure that rotation center moves, in addition, the lens barrel 530 of image pickup optical system 520 becomes also that lens barrel 510 with lamp optical system 500 is the same can be along a pair of guide bar 531, is the structure that rotation center moves with the surface of substrate 1.In addition, make a pair of guide bar 511 and a pair of guide bar 531 ground connection, so that the rotation center of the rotation center of lens barrel 510 and lens barrel 530 becomes common rotation center.
By lamp optical system 500 and image pickup optical system 520 are constituted such movable structure, characteristic according to the polysilicon membrane that on substrate 1, forms, or according to the wavelength of selecting by wavelength selective filters 503, the configuration that can change the relative angle of lamp optical system 500 and image pickup optical system 520.
In the present embodiment, illustrated and made lamp optical system 500 and image pickup optical system 520 both sides be movable structure, but the present invention is not limited to this, and can make a certain side in lamp optical system 500 and the image pickup optical system 520 is movable structure, also can achieve the goal.
The method in demonstration check result in the display frame 546 in the present embodiment 2 is the same with the method for using Fig. 6 explanation in embodiment 1, therefore omits explanation.
By adopting above-mentioned structure to check, can check crystalline state more accurately according to present embodiment 2 by the formed polysilicon membrane of quasi-molecule laser annealing, can keep LCD panel high-quality with glass substrate.
In addition, in present embodiment 2, illustrated wavelength filter and Polarization filter have been arranged on structure in lamp optical system 500 and 520 liang of sides of image pickup optical system, but not necessarily need to be arranged in both sides' the optical system, for example can be for the structure of wavelength filter and Polarization filter only is set in lamp optical system 500, perhaps also can be for the structure of wavelength filter and Polarization filter only is set in image pickup optical system 520.In addition, also can only a certain side in wavelength filter and the Polarization filter be arranged in both sides' the optical system.
In addition, the structure of throwing light on by long zone on the direction of using 505 pairs of substrates 1 of cylindrical lens in lamp optical system 500 is illustrated, but cylindrical lens is replaced as common round lens also can obtain same effect.
In addition, in present embodiment 2, pass through with respect to configuration lamp optical system 500 on substrate 1 vergence direction overleaf based on Fig. 5, be illustrated from the structure of vergence direction substrate 1 illumination, but also can be with respect to lamp optical system 500 is installed on substrate 1 vertical direction overleaf, from the back side of vertical direction illuminating board 1, take the single order diffraction light picture of the light that sees through substrate 1.
(embodiment 3)
All be to be illustrated in the image pickup optical system 520 of the image pickup optical system 220 of embodiment 1 and embodiment 2 by the structure that detects from the single order diffraction light pattern of substrate 1, but in the present embodiment the situation that these image pickup optical systems 220 or 520 are replaced as structure shown in Figure 7 is described, promptly be replaced as following structure: spatial filter 726 is arranged in the image pickup optical system 720, to carrying out shading, detect scattered light from substrate from the single order diffraction light pattern that produces by the illuminated substrate 1 of the illumination light of lamp optical system 700 emissions.The structure of lamp optical system 700, inspection data processing/control part 740 is identical with explanation in embodiment 1 and embodiment 2, therefore omits diagram and explanation.In structure shown in Figure 7, same with the situation of embodiment 1 shown in Figure 3, represented lamp optical system 700 is configured in a side identical with image pickup optical system 720 with respect to substrate 1, but identical with the situation of embodiment 2 shown in Figure 5, also can be configured in an opposite side with image pickup optical system 720 with respect to substrate 1.
The structure of image pickup optical system 700 shown in Figure 7 image pickup optical system 520 with the image pickup optical system 220 of embodiment 1 and embodiment 2 except that being provided with spatial filter 726 is identical.That is, detection optical system 720 possesses object lens 721, wavelength filter 722, Polarization filter 723, spatial filter 726, imaging len 724 and imageing sensor 725, and these are accommodated in the lens barrel portion 730.
At this, spatial filter 726 is arranged on the position with the pupil location equivalence of object lens 721, be arranged on the position of formation from the pattern of the single order diffraction light of the substrate 1 of illuminated optical illumination.
When such image pickup optical system 720 being replaced as image pickup optical system shown in Figure 3 220 or image pickup optical system 520 shown in Figure 5, the reflected light that forms the surface of the substrate 1 by having shone illumination light from illuminated optical system 700 on the pupil plane of object lens produces, and incides the diffraction light pattern of the single order diffraction light of object lens 721.
At this, on spatial filter 726, form light-shielding pattern 727, so that to passing through reflected light from (equidistantly forming) relief pattern of the rule that forms on the substrate 1, the diffraction light pattern that forms on the pupil plane of object lens carries out shading, and the catoptrical single order diffraction light pattern from the relief pattern of the rule on the surface of substrate 1 is carried out shading.
On the other hand, when not forming the relief pattern on substrate 1 surface regularly (the uneven situation of crystallization grain size of the polysilicon membrane of substrate surface), on the pupil plane of object lens 721, do not form light pattern, see through spatial filter 726 from the single order diffraction light of relief pattern from the single order diffraction light of the relief pattern on the surface of substrate 1.At this moment, see through the picture of the single order diffraction light of spatial filter 726 by imaging len 724 imaging on imageing sensor 725.
In the present embodiment, by check the crystalline state of the polysilicon membrane that forms at substrate 1 by these imageing sensor 725 detected pictures that see through the single order diffraction light of spatial filter 726.Check that defective is identical with the situation of embodiment 1 and 2 to the output demonstration of picture, therefore omit explanation.
Abovely the invention that the inventor does is specified, but the present invention is not limited to described embodiment, can carry out various changes in the scope of the aim that does not break away from this invention according to embodiment.
Claims (19)
1. polysilicon membrane testing fixture is characterized in that possessing:
Light irradiation unit, it is to having formed the substrate irradiates light of polysilicon membrane from the teeth outwards;
Image unit, it takes the picture of the single order diffraction light that produces from the surface of the described polysilicon membrane that has been shone light by this light irradiation unit;
Graphics processing unit, its picture that this image unit is taken the described single order diffraction light that obtains is handled, and checks the crystalline state of described polysilicon membrane; And
Output unit, the picture of the described single order diffraction light after it handles this graphics processing unit together is presented on the picture with the result's of described inspection information.
2. polysilicon membrane testing fixture according to claim 1 is characterized in that,
Described light irradiation unit from vertical direction to described substrate irradiates light.
3. polysilicon membrane testing fixture is characterized in that possessing:
Light irradiation unit, it has been to having formed the optically transparent substrate of polysilicon membrane from the teeth outwards, from a side irradiates light of a face of this substrate;
Image unit, it takes the picture at the single order diffraction light of the side generation of the another side of described substrate, the picture of the single order diffraction light that produces in a side of the another side of described substrate is by light transmission described substrate and the described polysilicon membrane of this light irradiation unit from the side irradiation of a face of described substrate, produces at the light of a side outgoing of the another side of described substrate;
Graphics processing unit, its picture that this image unit is taken the described single order diffraction light that obtains is handled, and checks the crystalline state of described polysilicon membrane; And
Output unit, the picture of the described single order diffraction light after it handles this graphics processing unit together is presented on the picture with the result's of described inspection information.
4. according to claim 1 or 3 described polysilicon membrane testing fixtures, it is characterized in that,
Described light irradiation unit is radiated at described substrate and is directional light on the direction, assembles the light that forms long shape on the direction vertical with this direction.
5. polysilicon membrane testing fixture according to claim 4 is characterized in that,
Described light irradiation unit to described substrate irradiation select light behind the wavelength.
6. polysilicon membrane testing fixture according to claim 5 is characterized in that,
Described image unit possesses Polarization filter, and described image unit is taken from picture in the reflected light of described substrate, that seen through the single order diffraction light that light produced of this polarization filter.
7. according to claim 1 or 3 described polysilicon membrane testing fixtures, it is characterized in that,
Described image unit possesses spatial filter, block the picture of single order diffraction light the picture of the single order diffraction light that produces from the polysilicon membrane of described substrate surface, that form with constant spacing by described spatial filter, described image unit is taken not the picture of the single order diffraction light that is blocked by this spatial filter.
8. according to claim 1 or 3 described polysilicon membrane testing fixtures, it is characterized in that,
Described image unit possesses wavelength selective filters, and described image unit blocks the light of the wavelength beyond the light of described light irradiation unit irradiation by this wavelength selective filters, takes the picture of described single order diffraction light.
9. according to claim 1 or 3 described polysilicon membrane testing fixtures, it is characterized in that,
Described light irradiation unit and described image unit have surface with described substrate as rotation center, can relatively change the structure of mutual position.
10. according to claim 1 or 3 described polysilicon membrane testing fixtures, it is characterized in that,
Also possesses the described substrate of placement, the platform unit that can in the XY plane, move.
11. a polysilicon membrane inspection method is characterized in that,
To having formed the substrate irradiates light of polysilicon membrane from the teeth outwards,
The picture of the single order diffraction light that shooting produces from the surface of the described polysilicon membrane of illuminated this light,
The image of the picture of the described single order diffraction light that this shooting is obtained is handled, and checks the crystalline state of described polysilicon membrane,
The information of the picture of handling the described single order diffraction light that this image is checked through with the result of described inspection together is presented on the picture.
12. polysilicon membrane inspection method according to claim 11 is characterized in that,
From vertical direction described substrate is shone described light.
13. a polysilicon membrane inspection method is characterized in that,
To having formed the optically transparent substrate of polysilicon membrane from the teeth outwards, from a side irradiates light of a face of this substrate,
Shooting is at the picture of the single order diffraction light of the side generation of the another side of described substrate, the picture of the single order diffraction light that a side of the another side of described substrate produces by from the light of the side irradiation of a face of this substrate, see through described substrate and described polysilicon membrane, at the light of a side outgoing of the another side of described substrate and produce
Handle the picture of the described single order diffraction light that this shooting obtains, check the crystalline state of described polysilicon membrane,
The information of the picture of the single order diffraction light after the described processing with the result of described inspection together is presented on the picture.
14. according to claim 11 or 13 described polysilicon membrane inspection methods, it is characterized in that,
Shine the light that only forms long shape in one direction of described substrate.
15. polysilicon membrane inspection method according to claim 14 is characterized in that,
Shine the light of only having adjusted polarization state of described substrate.
16. polysilicon membrane inspection method according to claim 15 is characterized in that,
What shine described substrate only selects light behind the wavelength.
17. according to claim 11 or 13 described polysilicon membrane inspection methods, it is characterized in that,
Block the picture of single order diffraction light the picture of the single order diffraction light that produces from the polysilicon membrane of described substrate surface, that form with constant spacing by spatial filter, take not the picture of the single order diffraction light that is blocked by this spatial filter.
18. according to claim 11 or 13 described polysilicon membrane inspection methods, it is characterized in that,
Block the light in addition of identical wavelength with the light that shines described substrate, take the picture of described single order diffraction light.
19. according to claim 11 or 13 described polysilicon membrane inspection methods, it is characterized in that,
The direction of picture that substrate is shone described direction of light and takes described single order diffraction light as rotation center, can relatively change mutual position with the surface of described substrate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010057459A JP5444053B2 (en) | 2010-03-15 | 2010-03-15 | Polycrystalline silicon thin film inspection method and apparatus |
| JP2010-057459 | 2010-03-15 |
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| CN102192908A true CN102192908A (en) | 2011-09-21 |
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| JP (1) | JP5444053B2 (en) |
| KR (1) | KR101273739B1 (en) |
| CN (1) | CN102192908A (en) |
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| CN104729425A (en) * | 2015-03-17 | 2015-06-24 | 中国科学院物理研究所 | Measuring method and measuring device for polycrystalline film morphology |
| US9857314B1 (en) | 2016-11-18 | 2018-01-02 | Industrial Technology Research Institute | Quality detecting device and method |
| CN109154562A (en) * | 2016-05-11 | 2019-01-04 | Ipg光子公司 | For measuring the process and system of the morphological character of the optical-fiber laser annealed polycrystalline silicon film of flat-panel monitor |
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| JP2012243929A (en) * | 2011-05-19 | 2012-12-10 | Hitachi High-Technologies Corp | Inspection method and device of polycrystalline silicon thin film |
| CN105738379B (en) * | 2014-12-12 | 2018-10-19 | 上海和辉光电有限公司 | A kind of detection device and detection method of polysilicon membrane |
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| CN104729425B (en) * | 2015-03-17 | 2017-10-10 | 中国科学院物理研究所 | The measuring method and measurement apparatus of polycrystal film pattern |
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| CN108074831B (en) * | 2016-11-18 | 2020-08-14 | 财团法人工业技术研究院 | Device and method for detecting crystallization quality of low-temperature polycrystalline silicon backboard |
| CN109863573A (en) * | 2016-12-12 | 2019-06-07 | 应用材料公司 | The method identified by LTPS layer of the online SEM on display base plate using multi-angle of view detector and check large-area substrates |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP5444053B2 (en) | 2014-03-19 |
| KR101273739B1 (en) | 2013-06-12 |
| JP2011192785A (en) | 2011-09-29 |
| KR20110103853A (en) | 2011-09-21 |
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