CN102165588A - Optoelectronic module having a carrier substrate and a plurality of radiation-emitting semiconductor components and method for the production thereof - Google Patents

Optoelectronic module having a carrier substrate and a plurality of radiation-emitting semiconductor components and method for the production thereof Download PDF

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Publication number
CN102165588A
CN102165588A CN2009801381690A CN200980138169A CN102165588A CN 102165588 A CN102165588 A CN 102165588A CN 2009801381690 A CN2009801381690 A CN 2009801381690A CN 200980138169 A CN200980138169 A CN 200980138169A CN 102165588 A CN102165588 A CN 102165588A
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semiconductor device
emitted radiation
contact
radiation
making surface
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CN102165588B (en
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贝尔特·布劳内
约尔格·埃里希·佐尔格
卡尔·魏德纳
沃尔特·韦格莱特
奥利弗·武茨
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Abstract

The invention relates to an optoelectronic module, which comprises a carrier substrate (1) and a plurality of radiation-emitting semiconductor components (2). The carrier substrate (1) comprises structured traces. Each radiation-emitting semiconductor component (2) has an active layer (2a) suited for generating electromagnetic radiation, a first contact surface (21), and a second contact surface (22), wherein the first contact surface (21) is disposed on the side of the radiation-emitting semiconductor components (2) facing away from the carrier substrate (1). The radiation-emitting semiconductor components (2) are provided with an electrically insulating layer (4), which has a recess in a region of the first contact surface (21). Conductive structures (8) are arranged in regions on the electrically insulating layer (4). One of the conductive structures (8) connects at least the first contact surface (21) of a radiation-emitting semiconductor component (2) to a further first contact surface (21) of a further radiation-emitting semiconductor component (2) or to a trace of the carrier substrate (1) in an electrically conductive manner. Furthermore, a method for producing such a module is provided.

Description

Optoelectronic module and manufacture method thereof with semiconductor device of support substrate and a plurality of emitted radiations
Present patent application requires the priority of German patent application 10 2,008 049 188.8, and its disclosure is incorporated herein by reference.
The present invention relates to a kind of optoelectronic module with semiconductor device of support substrate and a plurality of emitted radiations.In addition, the invention still further relates to a kind of method that is used to make optoelectronic module.
In traditional optoelectronic module, mainly line is engaged and welds or install as the technology that electrically contacts between chip and the supporting mass by the chip of electroconductive binder.Form the led array that for example is used for lighting module in this mode.The size (such as basic side of module height and/or module) of wishing module in the process of miniaturization is more and more littler.
The constructing technology and the interconnection technique that are used for the miniaturization of LED for example disclose at open source literature DE 10 353 679A1.In the case, device has supporting mass, and this supporting mass has semiconductor chip disposed thereon, and this semiconductor chip is contacted with planar fashion.
The module that has with the semiconductor chip of planar fashion contact advantageously has little element height, can preferably be implemented in the light-emitting face of semiconductor chip and the minimum range between the set optics thus.Yet the basic side of module can not be by with planar fashion contact and easily reduce, and must be integrated into module because be arranged on the conductive structure that being used on the supporting mass electrically contact semiconductor chip electric insulation.
Especially have under the situation of semiconductor device of a plurality of emitted radiations in module, wish the compact Layout of optoelectronic component on support substrate.
The present invention is based on following task: a kind of optoelectronic module is provided, and it especially has little structure height and has the compact Layout of the semiconductor device of a plurality of emitted radiations simultaneously.
The optoelectronic module of the feature of this task by having claim 1 and the manufacture method with feature of claim 11 thereof solve.The advantageous forms of implementation of module and manufacture method thereof and advantageous modification are the themes of dependent claims.
Designed a kind of optoelectronic module according to the present invention, it has the semiconductor device of support substrate and a plurality of emitted radiations.Support substrate has the semiconductor device that structurized printed conductor is used to electrically contact emitted radiation.The semiconductor device of emitted radiation has active layer, first contact-making surface and second contact-making surface that is suitable for producing electromagnetic radiation respectively, and wherein the first contact-making surface relative set is on the side that deviates from support substrate of the semiconductor device of emitted radiation.The semiconductor device of emitted radiation is provided with electric insulation layer, and this electric insulation layer correspondingly has recess in the zone of first contact-making surface of the semiconductor device of emitted radiation.On electric insulation layer, be provided with conductive structure partly.In the conductive structure one is connected with the first other contact-making surface of the semiconductor device of other emitted radiation or with the printed conductor conduction of support substrate to first contact-making surface of the semiconductor device of major general's emitted radiation.
That is to say, the electrically contacting not by realizing of the semiconductor device of emitted radiation with the cable of support substrate compartment of terrain guiding, but by realizing at least partially in the conductive structure that guides on the electric insulation layer.Electrically contact the especially little structure height that mode has advantageously obtained module by this.In addition, can provide compact module by conductive structure, this conductive structure is connected with the connection each other in an electrically conductive of the semiconductor device of emitted radiation or with the printed conductor conduction of support substrate.So the semiconductor device of the emitted radiation of module can be arranged on the support substrate with the mode and the method for saving the position.So the basic side of module advantageously reduces.
In addition, it is possible conductive structure being set near the semiconductor device of emitted radiation.Obtained the especially little structure height of module by this way of contact, especially can advantageously realize by this mode: for example optical element is set near the semiconductor device of emitted radiation the semiconductor device of emitted radiation.
Optical element for example can be understood as lens.Especially, optical element is interpreted as that it influences targetedly by the semiconductor device radiation emitted, especially changes emission characteristics.
The semiconductor device of emitted radiation preferably semiconductor chip, particularly preferably be light-emitting diode (LED).
The semiconductor device of emitted radiation has active layer respectively.Active layer has pn knot, double-heterostructure, single quantum (SQW, single quantum well) or multi-quantum pit structure (MQW, multi quantum well) respectively, is used to produce radiation.In the case, the term quantum well structure does not show the meaning about quantized dimension.Therefore, quantum well structure especially comprises the combination in any of quantum groove, quantum wire and quantum dot and these structures.
The semiconductor device of emitted radiation is preferably respectively based on nitride compound semiconductor, phosphide compound semiconductor or arsenide compound semiconductor." based on nitride compound semiconductor, phosphide compound semiconductor or arsenide compound semiconductor " represented in the present context: active epitaxial loayer sequence or one deck at least wherein comprise having component I n xGa yAl 1-x-yP, In xGa yAl 1-x-yN or In xGa yAl 1-x-yThe III/V semi-conducting material of As, wherein 0≤x≤1,0≤y≤1 and x+y≤1.
In a preferred expansion scheme, the semiconductor device of emitted radiation is embodied as thin-film semiconductor device respectively.In the application's scope, what regard thin-film semiconductor device as is following semiconductor device, during it is made growth substrates is peeled off, and for example growing to extension on this growth substrates has the semiconductor layer sequence of the semiconductor body that comprises thin-film semiconductor device.The semiconductor device of emitted radiation is connected with support substrate respectively, and this support substrate is different with the growth substrates of the semiconductor layer sequence that is used for semiconductor device.
That support substrate advantageously is not limited by is that growth substrates must satisfy, as in the high relatively requirement aspect the crystal structure.Therefore, select to compare with the material of growth substrates, the material that has more kinds of materials to can be used for support substrate is selected.
Electric insulation layer is a transmitted radiation for active layer institute radiation emitted to the small part by the semiconductor device of emitted radiation preferably.So the semiconductor device institute radiation emitted of emitted radiation can be exported by the electric insulation layer coupling, and does not suffer significant optical loss at this.Thus, can advantageously reduce the absorption of active layer institute radiation emitted in electric insulation layer, make the efficient of module advantageously improve.The semiconductor device of emitted radiation by the absorption of active layer institute radiation emitted in electric insulation layer preferably less than 40%, particularly preferably less than 20%.
Electric insulation layer is preferably film, lacquer or polymeric layer.
In a preferred expansion scheme, electric insulation layer comprises at least one conversion element.Suitable conversion element such as YAG:Ce powder are for example described in WO98/12757, and it is incorporated herein by reference in the content aspect this.
The corresponding preferably emission of the semiconductor device of emitted radiation has wavelength X 0Primary radiation.Conversion element in electric insulation layer is absorbing wavelength λ at least in part preferably 0Radiation and be transmitted in secondary radiation in other the wave-length coverage.Thus, module emission mixed radiation, this mixed radiation comprise the primary radiation of semiconductor device of emitted radiation and the secondary radiation of conversion element.
By selecting conversion element can change chromaticity coordinate targetedly by the semiconductor device institute radiation emitted of emitted radiation.Can advantageously realize desirable chromaticity coordinate thus by the module radiation emitted.
Hereinafter, chromaticity coordinate is interpreted as the numerical value of the color of light in the CIE color space that describing module is launched.
Alternatively, electric insulation layer can comprise the conversion element more than.Obtained the mixed radiation of module institute radiation emitted thus, it comprises a plurality of secondary radiations of primary radiation and a plurality of conversion elements.By using the accurate color selection that advantageously to carry out chromaticity coordinate more than one conversion element, obtained the desirable chromaticity coordinate of module institute radiation emitted thus.
Be noted that be not certain needs be: the semiconductor device of emitted radiation correspondingly is transmitted in the primary radiation in the identical wave-length coverage.Or rather, the semiconductor device of emitted radiation can be constructed as and makes it be transmitted in the radiation in the different wavelength range at least in part.So the stack by semiconductor device institute radiation emitted can produce the mixed radiation by the module emission, it is preferably located in the white color gamut in the CIE color space.
In a preferred expansion scheme, between the semiconductor device of each emitted radiation, be provided with complanation layer at least.
Can advantageously realize the flat surfaces that deviates from support substrate of module by complanation layer.Preferably, electric insulation layer is arranged on this flat surfaces.Particularly preferably, complanation layer electric insulation.
In an expansion scheme of module, complanation layer comprises at least one conversion element.Particularly preferably, conversion element absorbs by at least one the institute's radiation emitted in the semiconductor device of emitted radiation and with this radiation and is converted to radiation in other wave-length coverages, makes the mixed radiation of generation module institute radiation emitted.
Because conversion element directly is integrated in the electric insulation layer and/or in complanation layer, so advantageously do not need other optical layers.Optical layers is especially as lower floor, and it changes targetedly and/or revises chromaticity coordinate by the semiconductor device institute radiation emitted of emitted radiation.Because conversion element is integrated in electric insulation layer and/or the complanation layer and the preferred flattened layer of the semiconductor device of emitted radiation and/or electric insulation layer directly center on, so advantageously realized near the conversion of the semiconductor device institute radiation emitted semiconductor device of emitted radiation of emitted radiation.Can advantageously realize compact module thus.
Therefore, electric insulation layer is born the function of light conversion layer, the function of supporting mass layer that is used for conductive structure and the function of protective layer that is used for the device of emitted radiation in this case.
In a preferred extension of module, the framework that the semiconductor device of emitted radiation is set on the support substrate jointly centers on.
This framework preferably comprises pottery or plastics.The semiconductor device of emitted radiation spatially separates by framework and the medium that centers on.In addition, framework advantageously protects the semiconductor device of emitted radiation to avoid for example environmental impact, for example impacts or the moisture infiltration.
In a preferred extension of module, support substrate is a flexible substrate.
Therefore, might not make up support substrate rigidly.Especially, support substrate can be constructed as film.
In a preferred extension of module, the surface of the semiconductor device that is provided with emitted radiation thereon of support substrate is also nonplanar.
Therefore, support substrate for example can have domes.As long as the semiconductor device of emitted radiation can be installed on one of surface of support substrate, then the surface of support substrate especially also can have other moulding.
In a preferred extension of module, conductive structure can form by anisotropic layer, and it is arranged on the electric insulation layer and correspondingly has conductive region at least in the zone of first contact-making surface of the semiconductor device of emitted radiation.
Therefore, the zone that has conduction to anisotropic membrane portions.Conductive capability for example can form by local applied pressure or irradiation.The zone of the conduction by anisotropic film has correspondingly guaranteed the electrical connection of the semiconductor device of emitted radiation.
Anisotropic film preferably to double conductor device institute of small part radiation emitted be transmitted radiation.Especially, anisotropic film particularly preferably do not have therein in the zone that conductive capability ground makes up to double conductor device institute of small part radiation emitted be transmitted radiation.
Alternatively, anisotropic film can be removed partly.Especially in this case, anisotropic film is preferred correspondingly is removed in the zone of the radiation exiting side of the semiconductor device of emitted radiation.
In a preferred extension of module, electric insulation layer forms by structurized circuit board and conductive structure forms by means of the conductive tabs of stretching out from circuit board.
Preferred first contact-making surface of correspondingly guiding the semiconductor device of emitted radiation into of contact pin from the contact site of the printed conductor of circuit board.At this, corresponding being preferably shaped to of contact pin makes it leave towards the semiconductor device bending from circuit board.Circuit board preferably has recess, particularly preferably is, and recess correspondingly is arranged on first contact-making surface of semiconductor device of emitted radiation.Contact pin is preferably metal contact pin.
Circuit board preferably has printed conductor.Preferably corresponding, the printed conductor of circuit board is provided with being electrically insulated from each other.Electric insulation is particularly preferably realized by recess, the interval between the printed conductor of recess realization circuit board.
In this expansion scheme of module, a plurality of circuit boards also can be provided with stackedly, make that making up multilayer arranges.Thus, a plurality of wirings plane of module is advantageously possible, and thus, it is integrated to be implemented advantageously in circuit higher in the module.
In another preferred extension of module, electric insulation layer correspondingly part semiconductor device around corresponding emitted radiation on the side of the semiconductor device of corresponding emitted radiation guides.At this, first contact-making surface of the semiconductor device of emitted radiation correspondingly guides on electric insulation layer, makes the surface that deviates from support substrate of semiconductor device of emitted radiation correspondingly not have first contact-making surface.
Guaranteed the even power supply of the semiconductor device of emitted radiation by this guiding of first contact layer.What can realize in addition is: the external electrical terminals of the semiconductor device of emitted radiation is arranged on the arbitrary region of first contact layer.
Preferably, the guiding of the electric insulation layer on the side of semiconductor device is through the active layer of semiconductor device.
First contact-making surface of the semiconductor device by such guiding can be realized the electrical connection or the semiconductor device complexity wiring to each other of semiconductor device.Thus, advantageously realize the layout of the saving position of semiconductor device on support substrate.
The method that is used to make optoelectronic module according to the present invention especially may further comprise the steps:
A) semiconductor device with a plurality of emitted radiations is arranged on the support substrate, wherein support substrate has the semiconductor device that structurized printed conductor is used to electrically contact emitted radiation, the semiconductor device of emitted radiation correspondingly has active layer, first contact-making surface and second contact-making surface that is suitable for producing electromagnetic radiation, wherein first contact-making surface correspondingly is arranged on the side that deviates from support substrate of semiconductor device of emitted radiation
B) electric insulation layer is applied on the semiconductor device of emitted radiation, wherein electric insulation layer correspondingly has recess in the zone of first contact-making surface of the semiconductor device of corresponding emitted radiation, and
C) conductive structure is applied on the subregion of electric insulation layer, wherein one of conductive structure to first contact-making surface of the semiconductor device of major general's emitted radiation is connected with other first contact-making surface conduction of the semiconductor device of other emitted radiation or conducts electricity with the printed conductor of support substrate and is connected.
The favourable expansion scheme of this method and the favourable expansion scheme of this module obtain similarly, and vice versa.
By the minimized height that advantageously makes module by the conductive structure incoming call contact semiconductor device on plane.Simultaneously, the basic side of module is compared advantageously with conventional module and is reduced.
Use following electric insulation layer advantageously to cause the simplification of the construction process of module, guiding is used to electrically contact the conductive structure of semiconductor device on this electric insulation layer.Advantageously, the wiring of semiconductor device, the encapsulation of semiconductor device and necessary time conversion is corresponding is undertaken by coating processes, this light conversion preferably realizes by the conversion element that is integrated in the electric insulation layer.
In a favourable expansion scheme of this method, conductive structure applies by printing process.
Preferably, conductive structure is applied on the electric insulation layer by method for printing screen, stencil printing process or pad printing method.
Alternatively, conductive structure applies by means of vapor deposition.
Possible at this is that conductive structure applies by physical vapor deposition (PVD technology) or chemical vapor deposition (CVD technology).
Particularly preferably, partly apply conductive structure.The selectivity of conductive structure applies preferably by printing, spray or carrying out in conjunction with mask technique (especially masterplate) by means of PVD/CVD.
Another possibility that is used to apply conductive structure is printed conductor is directly printed onto electric insulation layer.
In another preferred extension, conductive structure forms by means of anisotropic layer, and it is arranged on the electric insulation layer and it correspondingly makes up in the zone of first contact-making surface of the semiconductor device of emitted radiation at least conductively.
The structure of the conductive region of anisotropic layer is preferably for example undertaken by UV laser by printing process, temperature methods or irradiation.
Alternatively, conductive structure can be integrated in the film that is laminated on the electrical insulating film.In this case, the film of lamination comprises conductive structure, for example metallization.Conductive structure preferably has been arranged in the film, makes the electrically contacting of semiconductor device of emitted radiation to realize with designed mode and method., particularly preferably be for this reason, use automatic contact method (the TAB method: winding engages automatically).
In a preferred extension of this method, before applying electric insulation layer, complanation layer is incorporated at least in the gap between the semiconductor device of emitted radiation.With module flatization, what make module deviates from making up of support substrate with having an even surface in this mode.
In another preferred extension of this method, conductive structure correspondingly is configured to conductive tabs, and wherein contact pin correspondingly is connected with first contact-making surface conduction of the semiconductor device of emitted radiation by punching out-wedging processing.
Other features, advantage, preferred extension and the suitability of this optoelectronic module and manufacture method thereof is from hereinafter in conjunction with obtaining the embodiment that Fig. 1 to 9 set forth.Wherein:
Fig. 1 shows the schematic cross-section of first embodiment of the module in the intermediate steps of manufacture method,
Fig. 2 shows the schematic cross-section according to another embodiment of module of the present invention,
Fig. 3 shows the schematic cross-section according to an embodiment of module of the present invention,
Fig. 4 shows the schematic cross section according to another embodiment of module of the present invention,
Fig. 5 shows the schematic cross section according to another embodiment of module of the present invention,
Fig. 6 shows the schematic cross-section according to another embodiment of module of the present invention,
Fig. 7 A shows the schematic cross section according to another embodiment of module of the present invention,
Fig. 7 B shows the schematic plan of the section of the embodiment among Fig. 7 A, and
Fig. 7 C shows the schematic plan according to another embodiment of module of the present invention.
Identical or act on identical part and correspondingly be provided with identical Reference numeral.Shown part and these parts magnitude relationship to each other should not be considered as conforming with ratio.
Figure 1 illustrates optoelectronic module, it has the semiconductor device 2 of support substrate 1 and a plurality of emitted radiations.The semiconductor device 2 of emitted radiation has active layer, first contact-making surface 21 and second contact-making surface 22 that is used to produce electromagnetic radiation respectively.First contact-making surface 21 is arranged on the surface that deviates from support substrate 1 of semiconductor device 2 of emitted radiation.
The semiconductor device 2 of emitted radiation preferably is configured to semiconductor chip, particularly preferably is and is configured to light-emitting diode (LED) respectively.
The active layer of the semiconductor device 2 of emitted radiation has pn knot, double-heterostructure, single quantum or multi-quantum pit structure respectively, is used to produce radiation.Preferably, the semiconductor device 2 of emitted radiation is respectively based on nitride compound semiconductor, phosphide compound semiconductor or arsenide compound semiconductor.
Support substrate 1 has structurized printed conductor, is used to electrically contact the semiconductor device 2 of emitted radiation.The semiconductor device 2 of emitted radiation especially, preferably is set respectively on the printed conductor of support substrate 1.This expression: second contact-making surface 22 mechanically and with electrical way contacts with the printed conductor of support substrate 1 respectively.
Preferably, the printed conductor that is respectively arranged with the semiconductor device 2 of emitted radiation thereon is electrically insulated from each other.Therefore, the semiconductor device 2 of emitted radiation is arranged on the printed conductor of support substrate 1 with being electrically insulated from each other.
Preferably, between the semiconductor device 2 of each emitted radiation, be provided with complanation layer 3.By complanation layer 3 flat surfaces that deviates from support substrate 1 of generation module advantageously.Complanation layer 3 electric insulations preferably, particularly preferably be that complanation layer 3 comprises dielectric material.
Complanation layer 3 is preferably based on silicones.Complanation layer 3 especially comprises silicones.Additionally or alternatively, complanation layer 3 can comprise other polymer or inorganic material.
The height of complanation layer 3 can surpass the height of the semiconductor device 2 of emitted radiation.Especially, complanation layer 3 can surpass the elevation guidance of the semiconductor device 2 of emitted radiation, makes complanation layer extend beyond the surface that deviates from support substrate 1 of the semiconductor device 2 of emitted radiation at least in part.Especially guaranteed the improved electric insulation of the semiconductor device 2 of emitted radiation thus.In this case, complanation layer 3 preferably by for 2 radiation emitted of semiconductor device of emitted radiation at least in part the material of transmitted radiation constitute.
In addition, complanation layer 3 can also comprise at least one conversion element 6.Preferably, conversion element 6 absorbs by at least one the institute's radiation emitted in the semiconductor device 2 of emitted radiation and with this radiation and is converted to the radiation of other wave-length coverages, makes the mixed radiation of generation module institute radiation emitted.
By selecting conversion element 6 can change chromaticity coordinate targetedly by 2 radiation emitted of semiconductor device of emitted radiation.Can advantageously realize the desirable chromaticity coordinate of module institute radiation emitted thus.Particularly preferably, module is transmitted in the radiation in the white chromaticity coordinate scope.
Preferably, the framework 7 that is set at jointly on the support substrate 1 of the semiconductor device 2 of emitted radiation centers on.
Preferably, framework 7 comprises pottery or plastics.In the embodiment in figure 1, the semiconductor device 2 of emitted radiation and complanation layer 3 spatially separate with surrounding environment by framework 7.Framework 7 advantageously protects the semiconductor device 2 of emitted radiation to avoid for example environmental impact, for example impacts.
On the semiconductor device 2 of emitted radiation and on complanation layer 3, preferably be provided with electric insulation layer 4 at least in part.Electric insulation layer 4 has recess respectively in the zone of first contact-making surface 21 of the semiconductor device 2 of emitted radiation.
Preferably, electric insulation layer 4 to small part is transmitted radiation for the semiconductor device 2 of emitted radiation by active layer institute radiation emitted.So, can export by electric insulation layer 4 couplings by 2 radiation emitted of semiconductor device of emitted radiation, and not suffer significant optical loss at this.
The radiation coupling output of coming out from module by 2 radiation emitted of semiconductor device of emitted radiation among the embodiment of Fig. 1 to 7 preferably the side that deviates from support substrate 1 in module carry out.
Electric insulation layer 4 is film, lacquer or polymeric layer preferably.
The same with complanation layer 3, electric insulation layer 4 can comprise at least one conversion element (not shown).Conversion element in electric insulation layer preferably absorbs by the partial radiation at least in 2 radiation emitted of semiconductor device of emitted radiation and is transmitted in secondary radiation in other the wave-length coverage.Thus, this module emission mixed radiation, its not only comprised emitted radiation semiconductor device 2 primary radiation but also comprise the secondary radiation of conversion element.
Because conversion element directly is integrated in the electric insulation layer 4 and/or in complanation layer 3, so advantageously do not need other additional optical layers.Optical layers for example is as lower floor, and it changes and/or revise the chromaticity coordinate of semiconductor device institute radiation emitted targetedly.So near 2 conversions of radiation emitted semiconductor device 2 of semiconductor device are advantageously carried out.Can realize compact module.
Electric insulation layer 4 parts have recess.Preferably, correspondingly in the zone of first contact-making surface 21 of the semiconductor device 2 of emitted radiation, in electric insulation layer 4, make up recess.
Electric insulation layer 4 preferably single-piece ground makes up.
On the surface that deviates from support substrate 1 of module, on electric insulation layer 4, be provided with the conductive structure (not shown) partly.
Show the module before applying conductive structure in the embodiment in figure 1.Therefore, the module in embodiment 1 shows the module in manufacture process.
In the embodiment in figure 1, masterplate 5 is arranged on the side that deviates from support substrate 1 of module.Masterplate 5 is applied in applying the manufacturing step of conductive structure.
Masterplate 5 is used for the structuring of conductive structure.Especially, masterplate 5 preferably has recess in the zone of the recess of electric insulation layer 4.
Conductive structure preferably is applied on the electric insulation layer 4 by means of printing process or is applied on the masterplate 5.So, can be by means of printing process, especially method for printing screen or pad printing method apply the conductive structure of preferred single layer, metal layer especially, are used for the wiring of the semiconductor device 2 of emitted radiation.
The structuring of conductive structure preferably is configured to by masterplate 5 and makes the semiconductor device 2 of emitted radiation be connected or be connected with the printed conductor conduction of supporting mass so that designed mode and method are each other in an electrically conductive by conductive structure.Therefore, conductive structure to first contact-making surface of the semiconductor device 2 of major general's emitted radiation is connected (not shown) with the first other contact-making surface of the semiconductor device 2 of other emitted radiation or with the printed conductor conduction of support substrate 1.
After applying conductive structure, masterplate 5 is removed.That is, masterplate 5 only temporarily is arranged on the module in manufacture process.
The embodiment of the module of finishing with conductive structure 8 has been shown in the embodiment of Fig. 2.
Different with the embodiment shown in Fig. 1, the module of Fig. 2 does not have on support substrate of being arranged on 1 and centers on the semiconductor device 2 of emitted radiation and the framework of complanation layer 3.
The semiconductor device 2 of emitted radiation preferably is fixed on the structurized printed conductor of support substrate 1 by solder flux or electroconductive binder.
As in the embodiment in figure 1, electric insulation layer 4 is applied on the semiconductor device 2 and complanation layer 3 of emitted radiation.Electric insulation layer 4 has recess in the zone of first contact-making surface 21 of the semiconductor device 2 of emitted radiation.These recesses are preferably made by laser means or lithographic plate printing method.
Opposite with the embodiment of Fig. 1, conductive structure 8 for example is applied on the electric insulation layer 4 by jet printing method.Applying preferably of conductive structure 8 undertaken by nozzle 9.Nozzle 9 with conductive structure, be preferably the single-layer metal rail and write on the side that deviates from support substrate 1 of module.Conductive structure 8 especially is applied on the electric insulation layer 4, the electrically contacting or the electrically contacting of the printed conductor of the semiconductor device 2 of emitted radiation and support substrate 1 to each other of semiconductor device 2 that make to realize emitted radiation.Conductive structure 8 especially lays respectively in the zone of first contact-making surface 21 of semiconductor device 2 of emitted radiation.
So the semiconductor device 2 of emitted radiation is ground connection independently.Alternatively, the semiconductor device 2 of emitted radiation can each other in an electrically conductively connect.
The embodiment of Fig. 3 is with the different of the embodiment of Fig. 2: support substrate 1 is a flexible substrate.Especially, the surface of the semiconductor device that is provided with emitted radiation thereon 2 of support substrate 1 and nonplanar.Support substrate 1 for example can have domes.As long as the installation of the semiconductor device 2 of emitted radiation is possible, then the surface of support substrate 1 especially also can have other moulding.
Especially in the embodiments of figure 3 module can rotatably support.Advantageously for example simplified the manufacturing of module thus.Writing by nozzle in the method step of conductive structure, module for example can be according to the desirable structuring campaign of conductive structure, for example rotation.
The section of optoelectronic module has been shown in the embodiment of Fig. 4.Especially, only show the semiconductor device 2 of the emitted radiation of module.The semiconductor device of the other emitted radiation of module is not shown for the reason of clearness.
The semiconductor device 2 of emitted radiation preferably is bonded on the support substrate 1 or by solder flux by the adhesiveness layer and is welded on the support substrate 1.As shown in FIG. 4, on the semiconductor device 2 of preferably emitted radiation and support substrate 1 be provided with electric insulation layer 4.Electric insulation layer 4 for example is the film of lamination or the layer that comprises glass.
Electric insulation layer 4 has recess in the zone of first contact-making surface 21 of the semiconductor device 2 of emitted radiation.Electric insulation layer 4 is preferably dielectric layer.
Preferably in the manufacture process of module by vapor deposition with conductive structure, be preferably whole ground of metal level especially and deposit to (not shown) on the electric insulation layer 4.Preferably, whole conductive structure deposits by physical vapor deposition or chemical vapor deposition.Subsequently, the conductive structure that whole ground makes up for example comes structuring by means of photoetching and etching according to the desirable wiring of the semiconductor device 2 of emitted radiation.Especially, whole conductive structure preferably is structured as and makes the semiconductor device connection each other in an electrically conductive of emitted radiation or the semiconductor device 2 of emitted radiation be connected with the printed conductor conduction of support substrate 1.
Preferably, in order to simplify and development control (Prozessf ü hrung), before the depositing electrically conductive structure,, for example come complanation by the SOG method with electric insulation layer, especially dielectric layer complanation.
The section of another optoelectronic module has been shown in the embodiment of Fig. 5.Also only show the semiconductor device 2 of emitted radiation in this case for the simplicity reason.
Different with embodiment shown in Figure 4, conductive structure 8 forms by anisotropic layer 8a, 8b.Anisotropic layer 8a, 8b are preferably anisotropic film, and anisotropic film is preferably by lamination.
Anisotropic layer preferably has two subregion 8a, 8b.A subregion 8a in the subregion preferably makes up conductively.And another part zone 8b electric insulation.
The structure of the conductive capability in the regional 8a of anisotropic layer is preferably realized by irradiation or local applied pressure.Thus, advantageously guarantee the electrical connection of semiconductor device 2 in the zone of first contact-making surface 21 of emitted radiation.
Anisotropic layer 8a, 8b are transmitted radiation for 2 radiation emitted of semiconductor device by emitted radiation in the 8b of second portion zone at least in part preferably.Alternatively, can after lamination, anisotropic layer 8a, 8b optionally be removed in the 8b of second portion zone.In this case, anisotropic layer 8a, 8b need not to be transmitted radiation.
The embodiment of optoelectronic module shown in Figure 6 has the semiconductor device 2 of a plurality of emitted radiations, and it is fixed on the support substrate 1 by solder flux or adhesiveness layer 10.Preferably, second contact-making surface 22 of the semiconductor device 2 of emitted radiation electrically contacts with the printed conductor that is arranged on the support substrate 1.The printed conductor of the semiconductor device 2 of emitted radiation preferably is provided with being electrically insulated from each other.
Opposite with the module that illustrates in the above embodiments, electric insulation layer 4 forms by structurized circuit board in the embodiment of Fig. 6, and the conductive tabs for example metal contact pin formation of conductive structure 8 by stretching out from circuit board.
Circuit board especially has following electrical insulating material, and it has the conduction printed conductor that is included in wherein.Particularly preferably, the electrical insulating material of circuit board is transmitted radiation for 2 radiation emitted to the small parts of semiconductor device by emitted radiation.In addition, the electrical insulating material of circuit board can also comprise at least one conversion element, with conversion 2 radiation emitted of semiconductor device by emitted radiation.
The printed conductor that is included in the electrical insulating material of circuit board preferably is connected with metal contact pin 8 conductions at least in part.In addition, first contact-making surface 21 of the preferred respectively semiconductor device 2 with emitted radiation of metal contact pin 8 conducts electricity and is connected.For this reason, circuit board 4 correspondingly has recess in the zone of first contact-making surface 21 of the semiconductor device 2 of emitted radiation.
Respectively by contact pin 8 and the semiconductor device 2 that electrically contacts emitted radiation by the printed conductor of circuit board 4.At this, the semiconductor device 2 of emitted radiation can connection each other in an electrically conductive or is connected with the printed conductor conduction of support substrate 1 respectively.
Contact pin 8 be preferably shaped to make its from the contact site of circuit board towards semiconductor device 2 bendings of emitted radiation.
In this embodiment, a plurality of circuit boards also can be provided with stackedly, make to make up the multilayer layout and therefore make up multilayer wiring plane (not shown) in module.
Metal contact pin 8 for example can be respectively by means of punching out-wedging handle with first contact-making surface 21 of the semiconductor device 2 of emitted radiation with electrical way with mechanically be connected.
In Fig. 7 A and 7B, show the schematic cross section of optoelectronic module respectively.Fig. 7 A shows the cross section of the section of this module.For this reason.Fig. 7 B shows the vertical view of the section of Fig. 7 A.
The semiconductor device 2 of emitted radiation has been shown in Fig. 7 A.Optoelectronic module preferably for example is made up of at the semiconductor device 2 of the emitted radiation shown in Fig. 7 A a plurality of, and the semiconductor device 2 of wherein emitted radiation preferably is arranged on the support substrate 1.
Different with the embodiment of Fig. 1 to 6, the semiconductor device 2 of the emitted radiation among Fig. 7 A has first contact-making surface 21 of guiding on electric insulation layer 4.For this reason, the semiconductor device 2 around corresponding emitted radiation guides on the side of the correspondingly local semiconductor device 2 in emitted radiation of electric insulation layer 4.Preferably, 4 guiding of the electric insulation layer on the side of the semiconductor device 2 of emitted radiation are through the active layer 2a of semiconductor device 2.
Preferably, first contact-making surface 21 guides on the side of semiconductor device 2 equally.Especially, first contact-making surface 21 guides on electric insulation layer 4.At this, the surface that deviates from support substrate of the semiconductor device 2 of emitted radiation does not preferably have first contact-making surface 21.
Can guarantee the uniform power supply of the semiconductor device 2 of emitted radiation along the guiding of the side of semiconductor device 2 by first contact layer 21.
Preferably, electric delivery section 12 is connected on the zone of first contact layer 21.Can on the arbitrary region of first contact layer 21, guide the electric delivery section 12 of the electricity wiring that is used for semiconductor device 2 along the guiding of the side of semiconductor device 2 by first contact layer 21.So the semiconductor device of module can be electrically connected to each other by delivery section 12.Alternatively, semiconductor device can be electrically connected separated from one anotherly.
The vertical view of the contact guidance (Kontaktf ü hrung) of the semiconductor device among Fig. 7 A has been shown in Fig. 7 B.At this, first contact layer 21 is arranged on the radiation coupling output end of semiconductor device 2.Preferably, first contact layer, 21 frame-like ground makes up.Especially, first contact layer 21 forms the rail of sealing.Be provided with electric delivery section 12 on first contact layer 21 partly, it is used to connect semiconductor device 2.
Preferably, the semiconductor device 2 of emitted radiation is provided with electric current Distribution Layer 13 among the embodiment of Fig. 7 a, 7b.Especially, electric current Distribution Layer 13 is for being transmitted radiation by 2 radiation emitted to small parts of semiconductor device.Electric current Distribution Layer 13 for example is ITO (tin indium oxide) layer or ZnO (zinc oxide) layer.
First contact layer 21 is metallization preferably.The radiation coupling output face of semiconductor device 2 does not preferably have metallization.Preferably, metallization is around semiconductor device 2 guiding, guarantees thus to compare more uniform power supply with the situation of the joint sheet that for example uses by tradition.
The vertical view of the module of the semiconductor device 2 with the emitted radiation among a plurality of Fig. 7 A has been shown in Fig. 7 C.In this case, this module has the semiconductor device 2 of four emitted radiations.Yet the quantity of the alternative of semiconductor device 2 is possible, and its respective field of application and application target with module is relevant.
Can realize the complexity wiring of semiconductor device 2 by the electricity guiding of laterally disposed first contact-making surface 21 to semiconductor device 2.Thus, advantageously realized the layout of the saving position of semiconductor device 2 on support substrate 1.
Especially have following possibility, wherein semiconductor device 2 is installed to individually on the support substrate 1 and separated from one another conducts electricity connection.In this case, support substrate 1 has the printed conductor that is electrically insulated from each other respectively on the installation side that is used for semiconductor device 2, is connected with semiconductor device in mode mechanically and with electrical way respectively thereon.
Alternatively, semiconductor device 2 can be electrically connected to each other.At this preferably, support substrate 1 makes up conductively itself, makes semiconductor device 2 be positioned on the common electromotive force.Alternatively, can be provided with printed conductor on support substrate 1, semiconductor device 2 jointly is arranged on the printed conductor.The electric delivery section 12 of semiconductor device 2 is preferably guided other electric connecting terminal (not shown) into.
The present invention is not confined to this by the description by embodiment, but can comprise the combination in any of any new feature and feature, this especially comprises the combination in any of the feature in the claim, even these features or these combinations itself are not offered some clarification in claim or embodiment.

Claims (15)

1. optoelectronic module, it has the semiconductor device (2) of support substrate (1) and a plurality of emitted radiations, wherein
-support substrate (1) has structurized printed conductor, is used to electrically contact the semiconductor device (2) of emitted radiation,
The semiconductor device of-emitted radiation (2) has active layer (2a), first contact-making surface (21) and second contact-making surface (22) that is suitable for producing electromagnetic radiation respectively, wherein first contact-making surface (21) relative set is on the side that deviates from support substrate (1) of the semiconductor device (2) of emitted radiation
The semiconductor device of-emitted radiation (2) is provided with electric insulation layer (4), has recess in the zone of first contact-making surface (21) of the corresponding semiconductor device in emitted radiation of described electric insulation layer (2),
-on electric insulation layer (4), be provided with conductive structure (8) partly, and
First contact-making surface (21) of the semiconductor device to major general's emitted radiation (2) the in-conductive structure is connected conductively with the first other contact-making surface of the semiconductor device (2) of other emitted radiation or with the printed conductor of support substrate (1).
2. module according to claim 1 wherein is provided with complanation layer (3) at least between the semiconductor device (2) of emitted radiation.
3. module according to claim 2, wherein complanation layer (3) comprises at least one conversion element.
4. according to one of aforesaid right requirement described module, wherein electric insulation layer (4) comprises at least one conversion element (6).
5. one of require described module according to aforesaid right, wherein the framework (7) that is set at jointly on the support substrate (1) of the semiconductor device of emitted radiation (2) centers on.
6. according to one of aforesaid right requirement described module, wherein support substrate (1) is a flexible substrate.
7. according to one of aforesaid right requirement described module, wherein the surface of the semiconductor device that is provided with emitted radiation thereon (2) of support substrate (1) is also nonplanar.
8. according to one of aforesaid right requirement described module, wherein conductive structure (8) forms by anisotropic layer, and this anisotropic layer is arranged on that electric insulation layer (4) is gone up and should anisotropic layer correspondingly has conductive region (8a) at least in the zone of first contact-making surface (21) of the semiconductor device (2) of emitted radiation.
9. according to one of aforesaid right requirement 1 to 7 described module, wherein electric insulation layer (4) forms by structurized circuit board, and conductive structure (8) forms by the conductive tabs of stretching out from circuit board.
10. according to one of aforesaid right requirement described module, wherein electric insulation layer (4) partly on the side of the semiconductor device (2) of corresponding emitted radiation the semiconductor device (2) around corresponding emitted radiation guide, and the surface that deviates from support substrate (1) of the corresponding semiconductor device (2) that is arranged so that emitted radiation on electric insulation layer (4) of first contact-making surface (21) of the semiconductor device of emitted radiation (2) does not have first contact-making surface (21).
11. a method that is used to make optoelectronic module, it has following method step:
-semiconductor device (2) of a plurality of emitted radiations is set on support substrate (1),
Wherein support substrate (1) has the semiconductor device (2) that structurized printed conductor is used to electrically contact emitted radiation, the semiconductor device of emitted radiation (2) has active layer (2a), first contact-making surface (21) and second contact-making surface (22) that is suitable for producing electromagnetic radiation respectively, wherein first contact-making surface (21) relative set is on the side that deviates from support substrate (1) of the semiconductor device (2) of emitted radiation
-electric insulation layer (4) is applied on the semiconductor device (2) of emitted radiation, wherein have recess (4a) in the zone of first contact-making surface (21) of the corresponding semiconductor device (2) in corresponding emitted radiation of electric insulation layer (4),
-conductive structure (8) is applied on the subregion of electric insulation layer (4), wherein first contact-making surface (21) of the semiconductor device to major general's emitted radiation (2) in the conductive structure (8) is connected conductively with other first contact-making surface (21) of the semiconductor device (2) of other emitted radiation or with the printed conductor of support substrate (1).
12. method according to claim 11, wherein conductive structure (8) applies by printing process.
13. method according to claim 11, wherein conductive structure (8) applies by vapor deposition.
14. method according to claim 11, wherein conductive structure (8) forms by anisotropic layer, this anisotropic layer be arranged on that electric insulation layer (4) is gone up and should anisotropic layer structure conductively in the zone of first contact-making surface (21) of the semiconductor device (2) of emitted radiation at least correspondingly.
15. method according to claim 11, wherein conductive structure (8) is configured to conductive tabs respectively, and wherein contact pin is connected with first contact-making surface (21) conduction of the semiconductor device (2) of emitted radiation by punching out-wedging processing respectively.
CN2009801381690A 2008-09-26 2009-08-25 Optoelectronic module having a carrier substrate and a plurality of radiation-emitting semiconductor components and method for the production thereof Active CN102165588B (en)

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