CN102163452A - Storage control device, storage device and storage device system - Google Patents

Storage control device, storage device and storage device system Download PDF

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Publication number
CN102163452A
CN102163452A CN2011100381090A CN201110038109A CN102163452A CN 102163452 A CN102163452 A CN 102163452A CN 2011100381090 A CN2011100381090 A CN 2011100381090A CN 201110038109 A CN201110038109 A CN 201110038109A CN 102163452 A CN102163452 A CN 102163452A
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temperature information
control apparatus
memory
refresh
memory device
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CN2011100381090A
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CN102163452B (en
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黑田真实
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Sony Corp
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Sony Corp
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40618—Refresh operations over multiple banks or interleaving
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40626—Temperature related aspects of refresh operations
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)

Abstract

Disclosed herein is a storage control device that includes a temperature sensor, temperature information selection section, refresh command reception section and trigger issuance frequency setting section.

Description

Memory control apparatus, memory device and memory apparatus system
Technical field
The present invention relates to memory control apparatus, memory device and memory apparatus system, and more specifically, relate to according to the temperature conditions of dynamic storage and control memory control apparatus, memory device and the memory apparatus system that refreshes.
Background technology
Dynamic storage by the electric charge that keeps by capacitor existence or do not have canned data.Such memory requirement refreshes, and it comprises the data of storing in the readout memory and overwriting data before electric charge is lost owing to leakage current.On the other hand, the leakage current in the known dynamic storage has temperature dependency, and it causes leakage current to reduce when low temperature and increases during at high temperature.
Therefore, when the leakage current flow according at high temperature the time is provided with refreshing frequency,, therefore cause the power consumption of wasting if remain unchanged then this frequency is too high.For this reason, proposed a kind of technology, its design comes to change refreshing frequency (for example, with reference to open No.2005-158222 (Fig. 1) of Jap.P. and the open No.2005-253562 (Fig. 2) of Jap.P.) based on the temperature information that obtains by the detection of stored actuator temperature.
Summary of the invention
In above-mentioned prior art, must export the temperature information that obtains by temperature detection so that change refreshing frequency according to memory temperature.In the case, possible configuration will for example be that each the temperature information from a plurality of memory chips is outputed to logical block or other integrated control section, make logical block can change the refreshing frequency of each memory chip based on the temperature information that receives.Yet this configuration requirement increases the wiring of number, is used for the temperature information from each memory chip is provided to logical block.
Make the present invention in view of aforementioned, and target of the present invention provides a kind of simpler wire structures, it is suitable for exporting the temperature information from each storer, refreshes so that control in the mode of the temperature conditions that is suitable for a plurality of storeies.
Make the present invention and solved top problem.First pattern of the present invention is a kind of memory control apparatus, comprising: temperature sensor, temperature information are selected part, refresh command receiving unit and are triggered issue frequency configuration part.Temperature sensor detected temperatures condition is to generate self temperature information.Temperature information selects part based on by the selection temperature information temperature indicative condition that provides from the memory control apparatus of level before with by self temperature information temperature indicative condition, and the selection temperature information or self temperature information that provide are provided.Temperature information select part output select outside output temperature information or self temperature information to the memory control apparatus of next stage as the selection temperature information.The refresh command receiving unit receives refresh command, and the transmission frequency of this refresh command is according to by integrated temperature information temperature indicative condition setting, and this integrated temperature information promptly is the selection temperature information that the memory control apparatus by last level obtains.Trigger the partial response of issue frequency configuration in receiving refresh command, the integrated temperature information and self the temperature information setting that provide based on the memory control apparatus from last level refresh triggering issue frequency.This refreshes to trigger makes the memory array execution refresh.This provides advantageous effects to be: for memory control apparatus output temperature information, formation is suitable for exporting the signal path of selection temperature information to the memory control apparatus of next stage.
In addition, in first pattern, the given unit that triggering issue frequency configuration part can be provided with for refresh command receives the issue number that refreshes triggering of number as refreshing triggering issue frequency.This provides advantageous effects to be: in response to the change of refresh command transmission frequency, the triggering that refreshes that is suitable for each memory control apparatus is set issues frequency.
In addition, in first pattern, trigger issue frequency configuration part and can be the frequency of the number that is suitable for issuing, and output refreshes temporarily and triggers as refreshing triggering with the issue frequency shift that refreshes triggering temporarily with the frequency issue of the reception that is suitable for refresh command.This provides advantageous effects to be: be provided with in the configuration that is suitable for refresh command issue synchronously refreshing triggering and be suitable for refreshing of each memory control apparatus and trigger the issue frequency.
In addition, in first pattern, interested memory control apparatus can also comprise signal switching part.If interested memory control apparatus is not one of last level, then signal switching part forms the integrated temperature information that is suitable for from the memory control apparatus of last level and is provided to the signal path that triggers issue frequency configuration part.If memory control apparatus is one of last level, then signal switching part forms two signal path, article one, be suitable for to select from temperature information the selection temperature information of part to be provided to triggering issue frequency configuration part, and another is suitable for the selection temperature information is outputed to other exterior storage opertaing device as integrated temperature information as integrated temperature information.This provides advantageous effects to be: signal switching part is set up one of two signal path of integrated temperature information, a memory control apparatus that is used for level except last level, and another is used for the memory control apparatus of last level.
In addition, in first pattern, if interested memory control apparatus is one of the first order, then temperature information selects part can select self temperature information, and export this information as the selection temperature information, and no matter by the selection temperature information temperature indicative condition that provides.This provides advantageous effects to be: work into the first order one of memory control apparatus.
In addition, in first pattern, be suitable for exporting and select temperature information to can be provided in the lower surface of interested memory control apparatus, and be positioned at and be suitable for to receive the identical position of electrode of selection temperature information to the electrode of the memory control apparatus of next stage.When interested memory control apparatus and other memory control apparatus during one by one in stacked on top, this electrode is provided at the top of the memory control apparatus of next stage, and the memory control apparatus of this next stage is positioned at adjacent with interested memory control apparatus and below interested memory control apparatus.This provides advantageous effects to be: when memory control apparatus during one by one in stacked on top, select temperature information by the contact between the electrode (junction) output, an electrode is on interested memory control apparatus, and another electrode is being positioned on the memory control apparatus below the interested memory control apparatus corresponding to the memory control apparatus of next stage.
In addition, in first pattern, be suitable for selecting the electrode of temperature information to can be provided in the top surface of interested memory control apparatus, and be positioned at and be suitable for to export the identical position of electrode of selecting temperature information from the memory control apparatus reception of level before.When interested memory control apparatus and other memory control apparatus during one by one in stacked on top, the lower surface of memory control apparatus of level before this electrode is provided at, should before the memory control apparatus of level be positioned at adjacent and on interested memory control apparatus with interested memory control apparatus.This provides advantageous effects to be: when memory control apparatus during one by one in stacked on top, receive the selection temperature information by the contact between the electrode, an electrode is on interested memory control apparatus, and another electrode is being positioned on the memory control apparatus above the interested memory control apparatus corresponding to the memory control apparatus of level before.
In addition, in first pattern, when interested memory control apparatus and other memory control apparatus during one by one in stacked on top, the electrode that is suitable for receiving or export integrated temperature information can comprise penetrating electrode (penetrating electrode), and be positioned at other memory control apparatus as the part of the signal path of integrated temperature information on the identical position of penetrating electrode that provides.This provides advantageous effects to be: when memory control apparatus during one by one in stacked on top, by sharing the signal path of integrated temperature information between the superincumbent and following memory control apparatus of the contact between the electrode.
In addition, second pattern of the present invention is a kind of memory device, comprising: memory array, temperature sensor, temperature information are selected part, refresh command receiving unit and are triggered issue frequency configuration part.Temperature sensor detected temperatures condition is to generate self temperature information.Temperature information selects part based on by the selection temperature information temperature indicative condition that provides from the memory device of level before with by self temperature information temperature indicative condition, and the selection temperature information or self temperature information that provide are provided.Temperature information select outside output temperature information that part output selects or self temperature information to the memory device of next stage as the selection temperature information.The refresh command receiving unit receives refresh command, and the transmission frequency of this refresh command is according to by integrated temperature information temperature indicative condition setting, and this integrated temperature information promptly is the selection temperature information that the memory control apparatus by last level obtains.Trigger the partial response of issue frequency configuration in receiving refresh command, the integrated temperature information and self the temperature information setting that provide based on the memory control apparatus from last level refresh triggering issue frequency.This refreshes to trigger makes the memory array execution refresh.This provides advantageous effects to be: for memory control apparatus output temperature information, formation is suitable for exporting the signal path of selection temperature information to the memory device of next stage.
In addition, three-mode of the present invention is a kind of memory apparatus system, and it comprises one by one a plurality of memory devices in stacked on top.Each memory device comprises: memory array, temperature sensor, temperature information are selected part, refresh command receiving unit, trigger issue frequency configuration part, select the temperature information output electrode, are selected temperature information input electrode and integrated temperature information electrode.Temperature sensor detected temperatures condition is to generate self temperature information.Temperature information select part before interested memory device level and adjacent with interested memory device before the memory device of level export self temperature information when not existing.At the memory device of level before when existing, temperature information selects part based on by the selection temperature information temperature indicative condition that provides from the memory device of level before with by self temperature information temperature indicative condition, and the selection temperature information or self temperature information that provide are provided.Temperature information select outside output temperature information that part output selects or self temperature information to being positioned at interested memory device below and the memory device below adjacent with interested memory device or refresh control equipment as the selection temperature information.The refresh command receiving unit receives refresh command.The transmission frequency of this refresh command is according to by integrated temperature information temperature indicative condition setting, and this integrated temperature information promptly is the selection temperature information that is obtained by nethermost memory control apparatus.Trigger the partial response of issue frequency configuration in receiving refresh command, the integrated temperature information and self the temperature information setting that provide based on the memory control apparatus from last level refresh triggering issue frequency.This refreshes to trigger makes the memory array execution refresh.Select the temperature information output electrode to be provided at the lower surface of interested memory device, be used to export and select temperature information to following memory device.This electrode is positioned at the top surface that is provided at following memory device and is suitable for receiving the identical position of electrode of selecting temperature information.Select the temperature information input electrode to be provided at the top surface of interested memory device, be used for selecting temperature information from the memory device reception of level before.This electrode is positioned at the lower surface that superincumbent memory device is provided and is suitable for exporting the identical position of electrode of selecting temperature information.Integrated temperature information electrode comprises the penetrating electrode that is suitable for receiving or exporting integrated temperature information.This electrode be positioned at other memory device as the part of the signal path of integrated temperature information on the identical position of penetrating electrode that provides.This provides advantageous effects to be: form two signal path by the contact between the electrode on the chip surface of two memory devices, article one, be suitable in the above and following memory device between receive or temperature information is selected in output, and another is used for integrated temperature information.This provides another advantageous effects to be: the signal path of sharing integrated temperature information between memory device.
In addition, four-mode of the present invention is a kind of memory apparatus system, it comprise one by one stacked on top, all be a plurality of memory devices and the refresh control equipment of chip form.Each memory device comprises memory array, temperature sensor, temperature information selection part, refresh command receiving unit, triggers issue frequency configuration part, selects temperature information output electrode, selection temperature information input electrode and integrated temperature information electrode.Temperature sensor detected temperatures condition is to generate self temperature information.Temperature information select part before interested memory device level and adjacent with interested memory device before the memory device of level export self temperature information when not existing.At the memory device of level before when existing, temperature information selects part based on by the selection temperature information temperature indicative condition that provides from the memory device of level before with by self temperature information temperature indicative condition, and the selection temperature information or self temperature information that provide are provided.Temperature information select part output select outside output temperature information or self temperature information to being positioned at interested memory device below and the memory device below adjacent with interested memory device or refresh control equipment as the selection temperature information.The refresh command receiving unit receives refresh command.Trigger the issue frequency configuration and partly receive integrated temperature information, the i.e. selection temperature information that obtains by bottom memory control apparatus, and, refresh triggering issue frequency based on the integrated temperature information that receives and self temperature information setting in response to receiving refresh command.This refreshes to trigger makes the memory array execution refresh.Select the temperature information output electrode to be provided at the lower surface of interested memory device, be used to export and select temperature information to following memory device.This electrode is positioned at the top surface that is provided at following memory device and is suitable for receiving the identical position of electrode of selecting temperature information.Select the temperature information input electrode to be provided at the top surface of interested memory device, be used for selecting temperature information from the memory device reception of level before.This electrode is positioned at the lower surface that superincumbent memory device is provided and is suitable for exporting the identical position of electrode of selecting temperature information.Integrated temperature information electrode comprises the penetrating electrode that is suitable for receiving or exporting integrated temperature information.This electrode be positioned at other memory device as the part of the signal path of integrated temperature information on the identical position of penetrating electrode that provides.This refresh control equipment comprises command transfer part and integrated temperature information input electrode.Command transfer is partly by the broadcasting of basis based on the transmission frequency of the integrated temperature information setting that receives from bottom memory control apparatus, and the transmission refresh command is to each memory device.Integrated temperature information input electrode is provided at the top surface of refresh control equipment, be used to receive integrated temperature information, and be positioned at be positioned at refresh control equipment above and the identical position of selection temperature information output electrode of the bottom memory device adjacent with refresh control equipment.This provides advantageous effects to be: form two signal path, one be suitable in the above and following memory device between or receive between memory device and the logical block or temperature information is selected in output, and another is used for integrated temperature information.This provides another advantageous effects to be: the signal path of sharing integrated temperature information between memory device and logical block.
The invention has the advantages that provides simpler wire structures, and it is suitable for exporting from the temperature information of each storer so that control in the mode of the temperature conditions that is suitable for a plurality of storeies and refreshes.
Description of drawings
Fig. 1 is the block diagram of diagram according to the overall arrangement example of the accumulator system of the first embodiment of the present invention;
Fig. 2 is the block diagram of diagram according to the ios dhcp sample configuration IOS DHCP of the storer of the first embodiment of the present invention;
Fig. 3 is the block diagram of diagram according to the functional configuration example of the refresh control circuit of the first embodiment of the present invention;
Fig. 4 A and 4B are the logical circuitry of diagram according to the concrete configuration example of the refresh control circuit of the first embodiment of the present invention;
Fig. 5 is the sequential chart that diagram triggers the operation of issue frequency configuration part;
When Fig. 6 is binary (that is high or low temperature) when temperature conditions, according to the truth table of the example of setting up the correspondence between temperature information rank and the refresh rate of the first embodiment of the present invention;
Fig. 7 A and 7B are truth tables, and one is used for temperature information selection part, and another is used for triggering issue frequency configuration part shown in Figure 4;
Fig. 8 is used for the truth table that temperature information is selected when temperature conditions is k level value (wherein k is equal to or greater than 3);
Fig. 9 is the truth table that is used to trigger issue frequency configuration part when temperature conditions is k level value (wherein k is equal to or greater than 3);
Figure 10 is the figure as the overall arrangement example of the accumulator system of stacked memory system that illustrates according to a second embodiment of the present invention; And
Figure 11 is the figure of example that illustrates the physical routing structure of accumulator system according to a second embodiment of the present invention.
Embodiment
Provide below with reference to accompanying drawings and be used to carry out the pattern of the present invention description of (hereinafter being called embodiment).Should be noted that, will provide description in the following sequence:
1. first embodiment (wherein each storer of accumulator system can receive and export and be used to be suitable for the selection temperature information that refreshes of temperature and the configuration of integrated temperature information)
2. second embodiment (wherein each storer of accumulator system can receive and export the example application of configuration of the selection temperature information that refreshes that is used to be suitable for temperature and integrated temperature information in the stacked memory system)
＜1. first embodiment 〉
The configuration of output temperature information [be used between the storer of accumulator system receiving and]
Fig. 1 diagram is according to the reception of the temperature information in the accumulator system 100 of the embodiment of the invention and the example of output, and this accumulator system 100 comprises a plurality of storeies.
Accumulator system 100 comprises n storer (that is, first to n storer 200-1 to 200-n) and logical block 300.In the present embodiment, first to n storer 200-1 each physically forms for example discrete memory chip to 200-n.In addition, logical block 300 also forms chip.These chips for example are arranged in suprabasil precalculated position.Should be noted that, in the description that provides below, if do not have jointly to handle under the concrete situation about distinguishing first to n storer 200-1 to 200-n all or some, then they can be written as storer 200.
As described later, storer 200 for example comprises that dynamic memory array and design keep data.Should be noted that first the capacity to n storer 200-1 to 200-n needs not to be identical.Yet we suppose that first has same-interface to n storer 200-1 to 200-n.
Be designed to carry out the control and the processing of various types of requirements according to the logical block 300 of present embodiment.In the control of these types, carry out the control that the storer 200 of accumulator system 100 is carried out by the Memory Controller 310 of logical block 300.Memory Controller 310 is according to the control that will carry out or handle the order CMD that exports various needs.Should be noted that logical block 300 is examples of the refresh controller described in the claim.In addition, Memory Controller 310 is command transfer examples partly of describing in the claim.
Because the storer 200 according to present embodiment is dynamic storagies, these storeies must refresh regularly.Logical block 300 according to present embodiment makes storer 200 execution refresh, as the means of these storeies of control.For this reason, the Memory Controller 310 of logical block 300 transmission indication is carried out the refresh command that refreshes as one of order CMD.Storer 200 is carried out in response to the reception of refresh command and is refreshed.
In addition, transmit the frequency of refresh command according to the temperature change of storer 200 according to the logical block 300 (Memory Controller 310) of present embodiment.That is to say, may change storer 200 and carry out the frequency that refreshes.Therefore, Memory Controller 310 receives integrated temperature information D temp-2, and it is regarded as the integrated temperature information by detected self the temperature information Dtemp-0 temperature indicative condition of each storer 200.Then, Memory Controller 310 is according to the frequency that is changed the transmission refresh command by integrated temperature information D temp-2 temperature indicative information.
In addition, each storer 200 comprises temperature sensor 220.Temperature sensor 220 detects the temperature conditions of relational storage, and generates the temperature information of the detected temperature conditions of indication.The temperature information that obtains from temperature sensor 220 is regarded as self temperature information Dtemp-0.
The signal path of order CMD can be connected to each storer 200.In addition, three signal path can be connected to each storer 200, one signal path is used for output and selects temperature information Dtemp-1, and another signal path is used for integrated temperature information D temp-2, and a signal path is used for input selection temperature information Dtemp-3 again.Correspondingly, each storer 200 physically comprises four terminals, and each of order CMD, output selection temperature information Dtemp-1, integrated temperature information D temp-2 and input selection temperature information Dtemp-3 used a terminal.Should be noted that signal path needs not be physically linear.For example, signal path for example can form the contact between each electrode.Under any circumstance, the path that is suitable between storer 200 and logical block transmitting coherent signal is called signal path here.
In this accumulator system 100, the signal path of order CMD forms as follows.That is to say that storer 200 and logical block 300 link together by common signal path.This permission will be provided to all storeies 200 simultaneously from the order CMD that the Memory Controller 310 of logical block 300 is exported.Therefore, will be provided to all storeies 200 simultaneously from the refresh command of logical block 300 outputs.
Next will provide the description of the wiring that is used for temperature information.In this was described, storer 200 can be considered to be connected in series, to be formed on a plurality of levels of the wiring aspect that is used to export the signal path of selecting temperature information Dtemp-1 and input to select temperature information Dtemp-3.Here, first memory 200-1 is regarded as the first order, and second memory 200-2, the 3rd storer 200-3 etc. are regarded as the second level, the third level etc., and the n storer is regarded as (n) level at last.
At first, the first memory 200-1 of the first order does not receive input and selects temperature information Dtemp-3.Therefore, do not have signal path to be connected to and be used to import the terminal of selecting temperature information Dtemp-3.The terminal that is used to export the first memory 200-1 that selects temperature information Dtemp-1 is connected to via signal path and is used to import the next stage of selecting temperature information Dtemp-3 or the terminal of partial storer 200-2.Next, the terminal that is used to export the partial storer 200-2 that selects temperature information Dtemp-1 is connected to the terminal of the storer 200-3 that is used to import the next stage of selecting temperature information Dtemp-3 or the third level via signal path.To the last the terminal with background storage of Ji n storer 200-n connects in the same manner.That is to say that the terminal that is used to export the i storer 200-i of the i level of selecting temperature information Dtemp-1 is connected to the terminal of the i+1 storer 200-(i+1) that is used to import the next stage of selecting temperature information Dtemp-3 or (i+1) level via signal path.
As mentioned above, storer 200 and logical block 300 can be considered to be connected in series, to be formed on a plurality of levels of the wiring aspect that is used to export the signal path of selecting temperature information Dtemp-1 and input to select temperature information Dtemp-3.
Next, for integrated temperature information D temp-2, the terminal that is used for the storer 200 of integrated temperature information D temp-2 links together via common signal path.This allows to be provided to all storeies 200 at different levels before it simultaneously from the integrated temperature information D temp-2 of the n storer 200-n output of last level, as described later.On the other hand, the terminal of Memory Controller 310 that is used for the logical block 300 of integrated temperature information D temp-2 is connected to the terminal of the n storer 200-n that is used to export the last level of selecting temperature information Dtemp-1.
[the generation example of integrated temperature information]
Next will provide the description of the generation example of integrated temperature information D temp-2.Therefore, integrated temperature information D temp-2 indication is from the maximum temperature condition of first all each bars self the temperature information Dtemp-0 that obtains to n storer 200-1 to 200-n.
At first, the first memory 200-1 of the first order always exports from self temperature information Dtemp-0 of it self temperature sensor 220 outputs and selects temperature information Dtemp-1 as output.That is to say that the output selection temperature information Dtemp-1 of the first memory 200-1 of the first order always indicates the identical temperature conditions of temperature conditions with self temperature information Dtemp-0.
Partial second memory 200-2 receives from the output of the first memory 200-1 of level before and selects temperature information Dtemp-1 to select temperature information Dtemp-3 as input.Next, second memory 200-2 relatively selects temperature information Dtemp-3 from self the temperature information Dtemp-0 and the input of 200 outputs of it self temperature sensor, and selects the temperature information of the higher temperature conditions of indication among both.Then, the temperature conditions of second memory 200-2 output selection is selected temperature information Dtemp-1 as output.The storer 200-3 that this output selects temperature information Dtemp-1 to be provided to next stage via signal path selects temperature information Dtemp-3 as input.
As before the level second memory 200-2, the 3rd storer 200-3 also relatively selects temperature information Dtemp-3 from self the temperature information Dtemp-0 and the input of 220 outputs of it self temperature sensor, and selects the temperature information of the higher temperature conditions of indication among both.Then, the temperature conditions of the 3rd storer 200-3 output selection is selected temperature information Dtemp-1 as output.The storer that this output selects temperature information Dtemp-1 to be provided to next stage is selected temperature information Dtemp-3 as input.Similarly, to the last Ji n storer 200-n's selects two information of indication (promptly with background storage, temperature information Dtemp-3 is selected in self temperature information Dtemp-0 and input) in the temperature information of higher temperature conditions, and the temperature conditions that output is selected is selected temperature information Dtemp-1 as output.
Therefore, two information of exchange (that is, output selects temperature information Dtemp-1 and input to select temperature information Dtemp-3) between each storer 200.As a result, the maximum temperature condition all self temperature information Dtemp-0 of obtaining from storer 200 of the temperature information indication of selecting by the n storer 200-n of last level.In addition, the temperature conditions that obtains as mentioned above can be considered to the integrated temperature condition of each bar self temperature information Dtemp-0 of instruction memory 200.
The temperature information that n storer 200-n output is selected is selected temperature information Dtemp-1 as foregoing output.The Memory Controller 310 that this output information is provided to logical block 300 is as integrated temperature information D temp-2.The temperature information that n storer 200-n also selects from the terminal output that is used for integrated temperature information D temp-2.This allows integrated temperature information D temp-2 is provided to all storeies 200 except the storer 200 of last level.Although describe after a while, first to n storer 200-1 to 200-n each can be based on integrated temperature information D temp-2 and self temperature information Dtemp-0, the refreshing frequency of thinking fit according to it self temperature conditions setting.
Accumulator system 100 according to present embodiment is broadcasted by the frequency consistent with integrated temperature information D temp-2 as described later, and refresh command is transferred to storer 200 from logical block 300 (Memory Controller 310).In addition, each storer 200 can be according to by it self self temperature information Dtemp-0 temperature indicative condition suitable refreshing frequency being set individually.Then, by the wiring of adopting the signal path that is used for temperature information shown in Figure 1 and the configuration that is suitable for generating integrated temperature information D temp-2, present embodiment is provided for the simpler wiring of temperature information.
For example, for each storer for existing accumulator system individually is provided with refreshing frequency, every that needs to obtain from the temperature sensor of each storer self temperature information is provided to logical block.This requires the as many line that is suitable for temperature information is provided to from storer logical block of number with storer.As a result, logical block has to have and the as many temperature information input terminal of the number of storer.In addition, logical block is provided with suitable refreshing frequency according to the temperature information that provides for each storer.Therefore, logical block has to by clean culture different refresh commands is transferred to each storer.This causes the refresh command Interrupt Service Routine that will be handled by logical block, and each storer uses a refresh command Interrupt Service Routine, causes lower processing speed, lower bus utilization ratio and other shortcoming.
On the contrary, in present embodiment as shown in Figure 1, output selects the signal path of temperature information Dtemp-1 only to need the storer 200 or the logical block 300 (for the n storer 200-n of last level) of the next stage that is connected to.That is to say, do not need with being used to export and selecting the signal path of temperature information Dtemp-1 to be connected to logical block 300 of all storeies 200, as the situation of existing accumulator system.As a result, logical block 300 only requires a terminal to receive integrated temperature information D temp-2.In addition, the terminal that is used for the storer 200 of integrated temperature information D temp-2 links together by common signal path.That is to say that present embodiment is provided for the simpler wiring of temperature information.
In the present embodiment, on the other hand, logical block 300 is by the broadcast transmitted refresh command.The refresh command Interrupt Service Routine that is used for each storer 200 has been eliminated in broadcasting, because the refreshing frequency by logical block 300 controls is identical for all storeies 200, makes and to avoid refresh command Interrupt Service Routine (each storer uses a refresh command Interrupt Service Routine).Therefore, there is not the reduction of processing speed or bus utilization ratio.Yet in the present embodiment, each storer 200 can individually change or be provided with refreshing frequency, and regardless of the fact of storer 200 by the broadcast reception refresh command.
[the overall arrangement example of storer]
Fig. 2 diagram is according to of the present invention and the ios dhcp sample configuration IOS DHCP that refreshes relevant storer 200.As shown in Figure 2, storer 200 comprises refresh command demoder 210, temperature sensor 220, refresh control circuit 600, refresh address counter 230, line control circuit 240 and memory array 250.
The refresh command that refresh command demoder 210 is differentiated and extraction indication execution refreshes is as the decoding of order CMD.More specifically, refresh command demoder 210 receives and imports the order CMD from logical block 300 (Memory Controller 310).Next, whether described demoder 210 is refresh command by the order CMD that the order ID identification with reference to the order CMD that receives receives for example.Then, the order CMD that receives when refresh command demoder 210 identification is during as refresh command, and described demoder 210 issues and output refresh indirectly and triggers RFTG-1.Refreshing triggering RFTG-1 indirectly is that original design triggers the signal that after a while memory array 250 execution of describing is refreshed.Described triggering RFTG-1 for example is used as in response to receiving the pulse that refresh command generates.Yet, under the situation of present embodiment, refresh indirectly and trigger RFTG-1 not as directly triggering.Alternatively, directly refresh triggering RFTG-2 as directly triggering.Trigger RFTG-1 from refresh control circuit 600 outputs directly refreshing triggering RFTG-2 based on refreshing indirectly.Should be noted that, be the example of the refresh command receiving unit described in the claim by the part that is suitable for receiving the terminal of order CMD and the storer 200 that refresh command demoder 210 constitutes.In addition, refresh indirectly and trigger RFTG-1 and refresh directly that to trigger RFTG-2 be respectively refreshing triggering temporarily and refreshing the example of triggering of describing in the claims.
Storer sensor 220 detects the temperature of relational storages, and self temperature information Dtemp-0 of the detected temperature conditions of output indication, as described in reference Fig. 1.Should be noted that storer sensor 220 preferably is arranged near the memory array 250 in the same memory 200.Yet because the physical restriction in the chip of storer 200, storer sensor 220 can be arranged a little away from memory array 250.
Refresh control circuit 600 uses and triggers from refreshing indirectly of receiving of refresh command demoder 210 that RFTG-1 generates and output (issue) directly refreshes triggering RFTG-2.For example, obtain directly to refresh and trigger RFTG-2, the output gap of this pulse is set, make to carry out and refresh with the frequency of the temperature conditions that is suitable for relational storage 200 as such pulse.On the other hand, refresh control circuit 600 generates and temperature information Dtemp-1 is selected in output output, as described in reference Fig. 1.
Refresh control circuit 600 receives self the temperature information Dtemp-0 from temperature sensor 220.In addition, described circuit 600 also receives input and selects temperature information Dtemp-3.In addition, temperature information Dtemp-1 is selected in described circuit 600 output outputs.In addition, described circuit 600 can switch between the input and output pattern.That is to say that if relational storage 200 is storeies of level except last level, then described circuit 600 receives integrated temperature information D temp-2.If relational storage 200 is storeies of last level, then described circuit 600 output integrated temperature information D temp-2.
In addition, refresh control circuit 600 receiving mode switching signal TRNMODE and register information RGMEM.After a while with the importance of description scheme switching signal TRNMODE and register information RGMEM with in response to the operation of the refresh control circuit 600 of this signal.
Refresh address counter 230 is the counters that are suitable for counting and exporting refresh address ADRRF.Directly refresh each the step-by-step counting refresh address ADRRF that triggers RFTG-2 for the input that obtains.
Line control circuit 240 is refreshes memory array 250 line by line.Therefore, described circuit 240 receives refresh address ADRRF and directly refreshes and trigger RFTG-2.Line control circuit 240 is selected the row by the memory array 250 of refresh address ADRRF indication, and makes with the sequential that is suitable for directly refreshing the pulse that triggers RFTG-2 and to refresh electric current by selecting the memory cell in the row.This allows to carry out line by line when upgrading refresh address ADRRF and refreshes.
Memory array 250 is one group of memory element with dynamic storage unit of arranging with array format.The memory cell of memory array 250 is assigned with for example with the vertical row address of arranging of ascending order.Memory cell also is assigned with the column address of for example arranging with the ascending order level.As understanding, refresh the memory cell that constitutes memory array 250 from the description that provides at present.
[ios dhcp sample configuration IOS DHCP of refresh control circuit]
The ios dhcp sample configuration IOS DHCP of block diagram illustration refresh control circuit 600 shown in Figure 3.As shown in Figure 3, refresh control circuit 600 can be believed to comprise temperature information and select part 610, switching part 620 and triggering issue frequency configuration part 630.
Here, the description of mode switching signal TRNMODE will at first be provided.In the accumulator system 100 according to present embodiment, logical block 300 is jointly controlled all storeies 200 by broadcasting, as described above.In this pattern, on the other hand, each storer 200 can be according to it self temperature conditions by oneself being provided with suitable refreshing frequency.Another pattern also can be used for accumulator system 100, and wherein logical block 300 can for example individually be controlled refreshing of each storer 200 according to the existing configuration of describing before.Here, the last pattern that is used for present embodiment is called public control model, and is called indivedual control models with the back pattern of existing configuration consistency.
In two patterns (that is, public control model and indivedual control model) which are mode switching signal TRNMODE instruction memory system 100 are.For example, mode switching signal TRNMODE is that height is used to indicate public control model, and mode switching signal TRNMODE is low indivedual control models that are used to indicate.Temperature information is selected part 610 and is triggered issue frequency configuration part 630 in response to mode switching signal TRNMODE, is switching with public control model with between the operator scheme that control model is associated individually.
Should be noted that in the description of Fig. 3, mode switching signal TRNMODE is always high.Therefore, our assumed temperature Information Selection part 610 and trigger the pattern operation of issue frequency configuration part 630 to be associated with public control model.
On the other hand, register information RGMEM indication relational storage 200 is in which rank of of multistage connection configuration of accumulator system 100.Register information RGMEM for example is stored in the register (not shown) that comprises in the storer 200.Described information RGMEM is provided the signal as the on/off state that is suitable for controlling switching part 620.For example, we suppose for example when register information RGMEM indication relational storage is storer of level except last level, control switching part 620 is for disconnecting, and when register information RGMEM indication relational storage was storer of last level, control switching part 620 was for connecting.
At first will provide temperature information and select the description of the operation of part 610.Self temperature information Dtemp-0 that input is selected temperature information Dtemp-3 and provided from temperature sensor 220 is provided described part 610.Next, temperature information selects part 610 relatively to select temperature information Dtemp-3 and self temperature information Dtemp-0 temperature indicative condition by the input that has received.Described part 610 is selected to comprise the temperature information of the temperature conditions of indicating higher temperature, and exports this information and select temperature information Dtemp-1 as output.Should be noted that if select temperature information Dtemp-3 identical with self temperature information Dtemp-0 temperature indicative by input respectively as temperature conditions, then the arbitrary of two temperature informations can be selected and export to temperature information selection part 610.
On the other hand, if relational storage is the first memory 200-1 of the first order, then do not provide input to select temperature information Dtemp-3 to select part 610 to temperature information.Correspondingly, described part 610 self the temperature information Dtemp-0 that provides from temperature sensor 220 is provided is same as before selected temperature information Dtemp-1 as output.
In refresh control circuit 600, on the other hand, output is selected the signal path branch of temperature information Dtemp-1 and is connected to an end of switching part 620.Switching part 620 makes its other end be connected to the signal path of integrated temperature information D temp-2.Only when relational storage 200 was the storer of last level, switching part 620 was just connected, as described above.When switching part 620 was connected, output selected the signal path of temperature information Dtemp-1 to be connected to the signal path of integrated temperature information D temp-2 via switching part 620.This provides this output of outside output to select the ability of temperature information Dtemp-1 as integrated temperature information D temp-2, as n storer 200-n as shown in Fig. 1.This also provides output to select temperature information Dtemp-1 to triggering issue frequency configuration part 630 abilities as integrated temperature information D temp-2.
On the contrary, when relational storage 200 was the storer of level except last level, switching part 620 disconnected.As a result, refresh control circuit 600 is operated by this way so that receive integrated temperature information D temp-2 from external unit, also as among Fig. 1 except shown in the storer of level the last level.Should be noted that switching part 620 is examples of the signal switching part described in the claim.
Next, triggering is issued 630 changes of frequency configuration part and is provided with and directly refreshes the issue frequency that triggers RFTG-2.Integrated temperature information D temp-2, self temperature information Dtemp-0 and refreshing indirectly triggers RFTG-1 and is provided to and triggers issue frequency configuration part 630.At first, trigger the relation of issue frequency configuration part 630, determine to refresh indirectly the sparse rate (thinning rate) of the pulse that triggers RFTG-1 based on temperature conditions between integrated temperature information D temp-2 and self the temperature information Dtemp-0.Then, described part 630 makes the number that refreshes the pulse that triggers RFTG-1 indirectly sparse according to the sparse rate of determining, and exports its number and triggered RFTG-2 by sparse pulse as directly refreshing.The interval that output directly refreshes the pulse that triggers RFTG-2 matches with the refreshing frequency that is fit to present self temperature conditions.Change as mentioned above and directly refresh the pulse issue frequency that triggers RFTG-2.Should be noted that the sparse processing of carrying out also comprises such situation here, it is sparse that wherein reality does not make pulse, because sparse rate is defined as 0%.On the other hand, the pulse that directly refreshes triggering RFTG-2 that forms by above-mentioned sparse processing can be with the frequency issue different with the frequency that receives refresh command.Yet it is synchronous directly to refresh the pulse and the refresh command reception sequential that trigger RFTG-2, as refreshing the pulse that triggers RFTG-1 indirectly.
[the concrete configuration example of refresh control circuit]
Next, the logical circuitry shown in Fig. 4 A illustrates the concrete configuration example of refresh control circuit 600 shown in Figure 3.For Fig. 4 A, we define temperature information and refresh rate as shown in Figure 6 at hypothesis.That is to say that temperature information Dtemp representative has the temperature conditions of the bi-values of high or low temperature.In the case, " L " represents low temperature, and " H " represents high temperature.Should be noted that this definition jointly is applied to self temperature information Dtemp-0, output selects temperature information Dtemp-1, integrated temperature information D temp-2 and input to select temperature information Dtemp-3.
For the refresh rate consistent with the definition of temperature conditions, the temperature Dtemp of " L " or low temperature is associated with 0.5 times, and the temperature Dtemp of " H " or high temperature is associated with 1 times.
In Fig. 4 A, temperature information selects part 610 to comprise selector switch 611, NAND door 612, phase inverter 613 and OR door 614.Switching part 620 comprises timing impact damper 621.On the other hand, triggering issue frequency configuration part 630 comprises together or door (exclusive NOR gate) 631, selector switch 632, trigger 633 and 634, phase inverter 635, AND door 636, selector switch 637 and trigger 638.
Select in the part 610 at temperature information, selector switch 611 is selected one of two signals (that is, input is selected temperature information Dtemp-3 and is fixed on low level fixed signal) according to mode switching signal TRNMODE.More specifically, as mode switching signal TRNMODE when being high, selector switch 611 selects input to select temperature information Dtemp-3.When mode switching signal TRNMODE when low, selector switch is selected fixed signal.In the description given herein, mode switching signal TRNMODE is high, because select public control model.Therefore, selector switch always selects input to select temperature information Dtemp-3.
OR door 614 output is selected temperature information Dtemp-3 as the input of the output of selector switch 611 and the logic of self temperature information Dtemp-0 of providing from temperature sensor 220 and select temperature information Dtemp-1 as output.When at least one of input when be high, OR door 614 is exported high level signals.Therefore, OR door 614 can be considered to be used to select two information (promptly, temperature information Dtemp-3 and self temperature information Dtemp-0 are selected in input) in the temperature information that comprises the temperature conditions of indicate higher temperature, and the information that output is selected is as output selection temperature information Dtemp-1.In addition, when input when to select temperature information Dtemp-3 and self temperature information Dtemp-0 be high, OR door 614 is exported high level signals.When input selects temperature information Dtemp-3 and self temperature information Dtemp-0 when low, described door 614 output low level signals.That is to say that when described temperature conditions was indicated by two information, temperature information Dtemp-1 was selected in the output of OR door 614 these temperature conditions of output indication.
The fixed signal circuit that comprises NAND door 612 and phase inverter 613 is connected to the signal path that temperature information Dtemp-1 is selected in output.If input selects temperature information Dtemp-3 not to be provided to relational storage 200, because described storer 200 is storeies of the first order, then this fixed signal circuit is kept the high level that is input as that is associated with the input selection temperature information Dtemp-3 of selector switch 611.
Reset signal RST and input select temperature information Dtemp-3 to be provided to NAND door 612.Phase inverter 613 is anti-phase with the output of NAND door 612, and it is outputed to one of input of the NAND door 612 that receives input selection temperature information Dtemp-3.
Reset signal RST is for example as various initialized triggerings.In the case, described signal RST is for example dragged down when energising, keeps height forward from this point then.In the fixed signal circuit, when reset signal RST was dragged down, the output of phase inverter 613 was fixed on low level.Should be noted that if input selects temperature information Dtemp-3 to be inverted to low level or vice versa from height, then in response to this, the output of phase inverter 613 also is inverted to low level or vice versa from height.
On the contrary, if there is not the outside to provide input to select temperature information Dtemp-3, then the output of phase inverter 613 remains fixed in low level.As a result, input selects the signal path of temperature information Dtemp-3 to be fixed on the electromotive force that the low level among the first memory 200-1 with the first order is associated regularly.Correspondingly, OR door 614 is always exported self temperature information Dtemp-0 and is selected temperature information Dtemp-1 as output, is used for consistent with the first memory 200-1 of the first order.
On the other hand, the timing impact damper 621 of switching part 620 connects or disconnects the connection of exporting between the signal path of selecting temperature information Dtemp-1 and integrated temperature information D temp-2.In the case, the signal path of output selection temperature information Dtemp-1 is connected to the input of timing impact damper 621, and the signal path of integrated temperature information D temp-2 is connected to the output of described impact damper 621.
As being provided to the clock of timing impact damper 621, register information RGMEM indication relational storage 200 is which rank of of the multistage connection configuration of accumulator system 100.If our hypothesis relational storage 200 is storeies of last level, then for example " 0 " is assigned to ID number as it of this storer, and register information RGMEM is low.We suppose that also then register information RGMEM is high if relational storage 200 is storeies of level except last level.
As a result, when register information RGMEM when low, this low level is anti-phase, and the high level clock is provided to timing impact damper 621.This allows output to select temperature information Dtemp-1 to be output as integrated temperature information D temp-2 same as before.That is to say, form the I/O path of the temperature information of the n storer 200-n of level at last.On the contrary, as register information RGMEM when being high, interrupt output and select connection between the signal path of temperature information Dtemp-1 and integrated temperature information D temp-2.As a result, be formed for the I/O path of the temperature information of the storer 200 of level except last level.
Next, whether same or 631 temperature conditions that can detect integrated temperature information D temp-2 and self temperature information Dtemp-0 of triggering issue frequency configuration part 630 mate.More specifically, if there is no coupling that is to say, if integrated temperature information D temp-2 and self temperature information Dtemp-0 are respectively high and low or low and high, and then same or door 631 output low level signals.On the other hand, when having coupling, that is to say, as integrated temperature information D temp-2 and self temperature information Dtemp-0 when all be high or low, with or door 631 export high level signals.
Should be noted that, with or door 631 can be considered to be provided for making that the number that refreshes the pulse that triggers RFTG-1 indirectly is sparse directly refreshes the sparse rate that triggers RFTG-2 so that generate.Sparse rate is 0% (not sparse) or 50% here, because refresh rate is defined as one of two-stage (that is, 1 times and 0.5 times), as shown in Figure 6.In the case, when with or door 631 be output as that sparse rate is 0% (not sparse) when high, and be 50% when it is output as when hanging down.
Selector switch 632 is selected the output of same or door 631 in response to mode switching signal TRNMODE or is fixed on the fixed signal of high level.We suppose that mode switching signal TRNMODE is for high, because select public control model here.Therefore, selector switch 632 is always selected together or the output of door 631, and exports this signal.
Trigger 633 output signal S1 are as triggering the synchronous signal S2 of RFTG-1 with refreshing indirectly.Signal S1 is the output of selector switch 632.
Each acquisition refreshes triggering RFTG-1 indirectly, and trigger 634 and phase inverter 635 generate anti-phase signal S3.Therefore, trigger 634 receives to refresh indirectly and triggers the clock of RFTG-1 as it.On the other hand, phase inverter 635 inversion signal S3 (that is, the output of trigger 634), and it is fed back to the input of trigger 634.
AND door 636 output signal S4, i.e. signal S3 and refresh the logic product that triggers RFTG-1 indirectly.By making the sparse picked up signal S4 of pulse that triggers RFTG-1 from refreshing indirectly.In the case, AND door 636 is sparse every a pulse.This means with 50% sparse rate makes pulse sparse.
Selector switch 637 is selected to refresh indirectly in response to signal S2 and is triggered RFTG-1 or signal S4, and the signal of output selection.Signal S2 (that is selector switch switching signal) is associated with the output that is equivalent to the same of sparse rate setting or door 631.Selector switch 637 is operated to be equivalent to make from refreshing the mode that the sparse and output of the pulse that triggers RFTG-1 has the signal of sparse umber of pulse indirectly according to the sparse rate that is provided with.
Trigger 638 and external clock the CLK synchronously output of outlet selector 637 trigger RFTG-2 as directly refreshing.The asynchronous memory array should be noted that, if for example then can omit trigger 638 as memory array 250.Therefore, the output of selector switch 637 triggers RFTG-2 as directly refreshing in fact.
Fig. 4 B diagram temperature information is selected another example of the fixed signal circuit of part 610.That is to say, provide selector switch 615 to replace NAND door 612 and phase inverter 613.Selector switch 615 provides input and selects temperature information Dtemp-3 and be fixed on the input of low level fixed signal as it.Selector switch 615 provides register information RGMEM1 as switching signal.When being high, register information RGMEM1 indication relational storage is the storer of the first order.When being low, register information RGMEM1 indication relational storage is the storer of level except the first order.As a result, if relational storage is the second level or second to n storer 200-2 to 200-n any afterwards, then input selects temperature information Dtemp-3 to output to selector switch 611.If relational storage is the first memory 200-1 of the first order, then is in low level low level fixed signal and outputs to selector switch 611.
[triggering the operation of issue frequency configuration part]
Sequential chart diagram shown in Figure 5 triggers the operation of issue frequency configuration part 630.Should be noted that operation shown in Figure 5 supposes that also mode switching signal TRNMODE is for high, because select public control model.
(that is every triggering period Trf) output refreshes triggering RFTG-1 indirectly at first, at regular intervals.Yet, should be noted that triggering period Trf is high or low the change according to the integrated temperature information D temp-2 that is provided to logical block 300 (Memory Controller 310).That is to say that according to definition shown in Figure 6, when integrated temperature information D temp-2 was high temperature, Memory Controller 300 was for example with the issued at intervals refresh command of time span T.On the contrary, when integrated temperature information D temp-2 was low temperature, Memory Controller 300 was with the issued at intervals refresh command of the time span 2T of time span T two double-lengths.The pulse period of refreshing triggering RFTG-1 indirectly is associated with the sequential of issue refresh command.Therefore, triggering period Trf for example switches between time span T and 2T.
In the case, signal S1 is the output via the same or door 631 of selector switch 632 acquisitions.Here, before time t4-1, integrated temperature information D temp-2 self temperature information Dtemp-0 that do not match.Yet at time t4-1, integrated temperature information D temp-2 and self temperature information Dtemp-0's is arbitrary by anti-phase.As a result, there is the coupling between two information, because both are high or low its.Therefore, signal S1 is low before time t4-1, and at time t4-1 be high afterwards.
Change into refreshing indirectly of high level and trigger RFTG-1 still in high, inversion signal S1 rising since time t4.This means signal S1 and refresh triggering RFTG-1 indirectly asynchronous mutually.The sequential of trigger 634 shifted signal S1 makes the leading edge of signal S1 synchronous with the leading edge that refreshes triggering RFTG-1 indirectly.The signal that trigger 634 outputs obtain is as signal S2.As the time t5 that refreshes indirectly after the time t4-1 when triggering RFTG-1 and rising first, Shu Chu signal S2 becomes high level from low level as mentioned above.
Next, refresh the pulse that triggers RFTG-1 at every turn indirectly and rise, the signal S3 of slave flipflop 634 outputs becomes high level or becomes low level from high level from low level, as shown in Figure 5.Are signal S3 and refresh the logic product that triggers RFTG-1 indirectly from the signal S4 of AND door 636 outputs.Therefore, as shown in Figure 5, for refreshing per two pulses that trigger RFTG-1 indirectly, signal S4 occurs.That is to say, sparse by making with 1/2 sparse rate from refreshing the pulse that triggers RFTG-1 indirectly, picked up signal S4.
Before the time t5 of the signal S2 that is provided to selector switch 637 as switching signal when low, selector switch 637 select and output signal S4 as directly refreshing triggering RFTG-2.On the contrary, at time t5 and afterwards, selector switch 637 is selected and output refreshes indirectly and triggers RFTG-1.
Therefore, whether triggering shown in Figure 4 issue frequency configuration part 630 according to identical with integrated temperature information D temp-2 temperature indicative condition by self temperature information Dtemp-0, changes and be provided with 1: 2 ratio and directly refresh the issue frequency that triggers RFTG-2.
Incidentally, in the issue of the triggering shown in Fig. 4 A frequency configuration part 630, can omit trigger 633, make signal S1 be provided to selector switch 637 same as before as switching signal.Yet in the case, our hypothesis is that high synchronous signal S2 changes into low level refreshing triggering RFTG-1 indirectly, as under the situation of the time of Fig. 5 t4-1.As a result, selector switch 637 at time t4-1 with its selection from triggering RFTG-1 and change into and be low signal S4 for high refreshing indirectly.For example, this causes the disturbance and the loss that directly refresh the pulse waveform that triggers RFTG-2 owing to shorter output time, and this for example is not preferred aspect operational stability.Therefore, in the present embodiment, the signal S2 of slave flipflop 633 output with refresh indirectly that to trigger RFTG-1 synchronous.As a result, the signal of being carried out by selector switch 637 switches also and refreshes indirectly that to trigger RFTG-1 synchronous, therefore eliminates the disturbance that directly refreshes the pulse waveform that triggers RFTG-2 or the possibility of loss.
[truth table]
Fig. 7 A and 7B are the truth tables that is used for the operation of refresh control circuit shown in Figure 4 600.Should be noted that, the not only operation of public control model (as supposing up to now), and also the operation of indivedual control models is included in the truth table.
Fig. 7 A is used for the truth table that temperature information is selected the operation of part 610.At first, mode switching signal TRNMODE is " H " in public control model.With this understanding, when self temperature information Dtemp-0 is " L " (temperature conditions: low) and input when selecting temperature information Dtemp-3 be " L " (temperature conditions: low), output selection temperature information Dtemp-1 is " L " (temperature conditions: low).In addition, when self temperature information Dtemp-0 height) and input when selecting temperature information Dtemp-3 be " L " (temperature conditions: low) be that " H " (temperature conditions:, output selection temperature information Dtemp-1 is " H " (temperature conditions: height).In addition, when self temperature information Dtemp-0 be that to select temperature information Dtemp-3 be that " H " (temperature conditions: in the time of height), output selection temperature information Dtemp-1 is " H " (temperature conditions: height) for " L " (temperature conditions: low) and input.When self temperature information Dtemp-0 be " H " (temperature conditions: height) and input to select temperature information Dtemp-3 be that " H " (temperature conditions: in the time of height), output selection temperature information Dtemp-1 is " H " (temperature conditions: height).This truth table is used to be suitable for to select the temperature information that comprises the temperature conditions of indicate higher temperature in two information (that is, temperature information Dtemp-3 is selected in self temperature information Dtemp-0 and input) as the operation of output selection temperature information Dtemp-1.If also being used to be suitable for self temperature information Dtemp-0 and input, this truth table select the temperature conditions of temperature information Dtemp-3 identical then the operation of temperature information Dtemp-1 is selected in output output indication uniform temp condition.
Also will provide the description of indivedual control models.In indivedual control models, mode switching signal TRNMODE is " L ".Under this condition, when self temperature information Dtemp-0 is " L " (temperature conditions: low), ignores input and select temperature information Dtemp-3, and output to select temperature information Dtemp-1 also be " L " (temperature conditions: low).On the other hand, when self temperature information Dtemp-0 be " H " (temperature conditions: in the time of height), ignore input and select temperature information Dtemp-3, and output to select temperature information Dtemp-1 also be " H " (temperature conditions: height).That is to say, export self temperature information Dtemp-0 same as before and select temperature information Dtemp-1, no matter the temperature conditions of temperature information Dtemp-3 is selected in input as output.Should be noted that, ignore input and select temperature information Dtemp-3, will import the operation that selection temperature information Dtemp-3 maintains " L " always corresponding to for example being suitable for using from activating among Fig. 4 A and afterwards fixed signal circuit (NAND door 612 and phase inverter 613).Therefore, in indivedual control models, will select temperature information Dtemp-1 to be provided to logical block 300 from the output of each storer 200 output via the unlike signal path.
Fig. 7 B is the truth table that is used to trigger the operation of the triggering issue of issuing frequency configuration part 630.At first, in public control model, mode switching signal TRNMODE is " H ".Under this condition, when self temperature information Dtemp-0 is " L " (temperature conditions: low), and integrated temperature information D temp-2 is when being " L " (temperature conditions: low), directly refreshes for each refresh command issue that receives and triggers RFTG-2.In the case, issue refresh command according to low temperature with 0.5 times of refresh rate.In addition, storer 200 self is in low temperature.Therefore, the same issue continually with the reception refresh command directly refreshes triggering RFTG-2.This is corresponding to such fact, be defined as once if for example receive the unit number of the number of times of refresh command, then for the unit number (that is, once) of number of times directly to refresh the issue number of times that triggers RFTG-2 be once.
In addition, when self temperature information Dtemp-0 is " L " (temperature conditions: low), and integrated temperature information D temp-2 is " H " (temperature conditions: in the time of height), directly refresh for per two refresh commands issue that receives and to trigger RFTG-2.At this moment, issue refresh command according to high temperature with 1 times of refresh rate.On the contrary, storer 200 self is in low temperature.Therefore, 0.5 times of refresh rate is enough.For this reason, half is issued continually directly to refresh and triggers RFTG-2 with receiving refresh command.This is corresponding to such fact, is provided with according to the unit number (that is, once) of the number of times that receives refresh command that directly to refresh the issue number of times that triggers RFTG-2 be 0.5 time.
In addition, when self temperature information Dtemp-0 be that " H " (temperature conditions: height), and integrated temperature information D temp-2 is " H " (temperature conditions: in the time of height), directly refresh for each refresh command issue that receives and to trigger RFTG-2.At this moment, issue refresh command according to high temperature with 1 times of refresh rate.Yet storer 200 self is in high temperature.Therefore, select described 1 times of refresh rate.As a result, the same issue continually with the reception refresh command directly refreshes triggering RFTG-2.
In indivedual control models, on the other hand, mode switching signal TRNMODE is " L ".With this understanding,, ignore integrated temperature information D temp-2, and directly refresh for each refresh command issue that receives and to trigger RFTG-2 when self temperature information Dtemp-0 is " L " (temperature conditions: low).Opposite when self temperature information Dtemp-0 be " H " (temperature conditions: height), ignore integrated temperature information D temp-2, and directly refresh for each refresh command issue that receives and to trigger RFTG-2.That is to say, always issue directly to refresh for each refresh command that receives and trigger RFTG-2.
Be provided to selector switch 632 as select control signal, selector switch 632 to export the result of high level fix signal always in low level mode switching signal TRNMODE in response, obtain top operation.No matter this allow to select to refresh indirectly and triggers RFTG-1 and the temperature conditions of self temperature information Dtemp-0, and triggers RFTG-2 by selector switch 637 outputs as directly refreshing.
[extended example of the temperature conditions that comprises in the temperature information]
In the description that provides heretofore, temperature information Dtemp representative has the temperature conditions of the bi-values of high or low temperature.Yet the present embodiment of can upgrading makes with three or more resolution rank representation temperature conditions.That is to say, can be k level value (wherein k is equal to or greater than 3 integer) by the number of the temperature conditions of temperature information Dtemp representative.Should be noted that, be upgraded to k level value and expand to self temperature information Dtemp-0, output and select temperature information Dtemp-1, input to select that temperature information Dtemp-3 and integrated temperature information D temp-2's is whole.On the other hand, the number that our hypothesis is assigned to temperature conditions is big more, and temperature is high more.
Fig. 8 is when the truth table of temperature conditions by k level value (wherein k is equal to or greater than 3) example of the operation of temperature information selection part 610 when representing.Should be noted that, the operation in the not only public control model (as supposing up to now), and also the operation in indivedual control model also can be included in the truth table of Fig. 8.
With reference to Fig. 8, will at first providing wherein, mode switching signal TRNMODE is the description of the public control model of " H ".If temperature conditions is k level value in the present embodiment, then for each to #k of the temperature conditions #1 of self temperature information Dtemp-0, input selects temperature information Dtemp-3 can get temperature conditions #1 to any of #k.
At first, when self temperature information Dtemp-0 indicated temperature condition #1, and select temperature information Dtemp-3 similarly during indicated temperature condition #1 when input, also indicated temperature condition #1 of temperature information Dtemp-1 is selected in output so.Next, when temperature information Dtemp-3 indicated temperature condition #2 was selected in input to any of #k, input selection temperature information Dtemp-3 was higher in these situations any.As a result, output selects temperature information Dtemp-1 indication and input to select the identical temperature conditions (#2 is to one of #k) of temperature conditions of temperature information Dtemp-3.
On the other hand, as self temperature information Dtemp-0 indicated temperature condition #2, and when temperature information Dtemp-3 indicated temperature condition #1 is selected in input, select higher self temperature information Dtemp-0 so.Therefore, temperature information Dtemp-1 indicated temperature condition #2 is selected in output.In addition, when temperature information Dtemp-3 indicated temperature condition #2 is selected in input, during promptly identical with the temperature conditions of self temperature information Dtemp-0 condition, also indicated temperature condition #2 of temperature information Dtemp-1 is selected in output.Next, when input selects temperature information Dtemp-3 indication to be higher than the temperature conditions #3 of temperature conditions of self temperature information Dtemp-0, select input to select the temperature conditions of temperature information Dtemp-3.Therefore, temperature information Dtemp-1 indicated temperature condition #3 is selected in output.For after combination, when temperature information Dtemp-3 indicated temperature condition #4 is selected in input to any of #k, select the temperature conditions of input selection temperature information Dtemp-3.Therefore, output selects temperature information Dtemp-1 indication and input to select the identical temperature conditions (#4 is to one of #k) of temperature conditions of temperature information Dtemp-3.
On the other hand, when self temperature information Dtemp-0 indicated temperature condition 3, and when temperature information Dtemp-3 indicated temperature condition #1 was selected in input to any of #3, self temperature information Dtemp-0 was greater than or equal to input selection temperature information Dtemp-3 on temperature so.Therefore, temperature information Dtemp-1 indicated temperature condition #3 is selected in output.Next, when input selects temperature information Dtemp-3 indication to be higher than the temperature conditions #4 of temperature conditions of self temperature information Dtemp-0, select input to select the temperature conditions of temperature information Dtemp-3.As a result, temperature information Dtemp-1 indicated temperature condition #4 is selected in output.In addition, when temperature information Dtemp-3 indicated temperature condition #5 is selected in input to any of #k, select the temperature conditions of input selection temperature information Dtemp-3.Therefore, output selects temperature information Dtemp-1 indication and input to select the identical temperature conditions (#5 is to one of #k) of temperature conditions of temperature information Dtemp-3.
For combination afterwards, when self temperature information Dtemp-0 indicated temperature condition #4 or other higher temperature condition, select the higher temperature in two information (that is, temperature information Dtemp-3 is selected in self temperature information Dtemp-0 and input) to select temperature information Dtemp-1 similarly as output.On the other hand, when selecting temperature information Dtemp-3 indication uniform temp condition by self temperature information Dtemp-0 and input, select this temperature conditions to select temperature information Dtemp-1 as output.Then, when self temperature information Dtemp-0 indicated temperature condition #k (that is, maximum temperature), as shown in Figure 8, temperature information Dtemp-1 indicated temperature condition #k is always selected in output.
In indivedual control models, on the other hand, mode switching signal TRNMODE is " L ".With this understanding, temperature information selects part 610 to operate in the following manner.That is to say, select the temperature conditions identical to select temperature information Dtemp-1 as output with the temperature conditions of self temperature information Dtemp-0, and no matter the temperature conditions of temperature information Dtemp-3 is selected in input.
Fig. 9 is the truth table that is used to trigger issue frequency configuration part 630 when temperature conditions Dtemp is k level value.Should be noted that, the operation in the not only public control model (as supposing up to now), and also the operation in indivedual control model is included in the truth table of Fig. 9.
When by k level value representation temperature condition, some refresh rate settings are possible.Here, the definition refresh rate is provided with as follows.That is to say, suppose that the variable of representation temperature condition is represented by m, refresh rate passes through by equation 1/2 (k-m)The multiple setting that provides.More specifically, suppose that for maximum temperature condition #k refresh rate be 1 times, temperature descends with the descending of the numeral (that is, temperature conditions #k-1, #k-2, #k-3 etc.) that is assigned to temperature conditions.Correspondingly, refresh rate becomes 1/2 times, 1/4 times, 1/8 times etc.In the description of Fig. 9, on the other hand, each the digital variable of temperature conditions that is assigned to self temperature information Dtemp-0 is by " p " expression, and each the digital variable that is assigned to the temperature conditions of integrated temperature information D temp-2 is represented by " q ".Trigger in the row of RFGT-2 refreshing of Fig. 9, the temperature conditions numeral of self temperature information Dtemp-0 and integrated temperature information D temp-2 is substituted among variable " p " and " q ".
In Fig. 9, at first, mode switching signal TRNMODE also is " H " in public control model.With this understanding, when self temperature information Dtemp-0 indication during as the temperature conditions #1 of minimum temperature, directly refresh the pulse that triggers RFTG-2 " for receive per 2 (q-p)Individual refresh command issue ".This is defined as once if receive the unit number of the number of times of refresh command corresponding to this fact, and the number that then directly refreshes the issue that triggers RFTG-2 is made as 1/2 (q-p)Therefore, more specifically, when by integrated temperature information D temp-2 temperature indicative condition when temperature conditions #1 becomes temperature conditions #2, #3 etc., the number that directly refreshes the issue of the pulse that triggers RFTG-2 reduces to 1/4 (for per four refresh commands once), 1/8 (for per eight refresh commands once) etc. from 1/2 (for per two refresh commands once).
In addition, when self temperature information Dtemp-0 indicated temperature condition #2, and when integrated temperature information D temp-2 indicated temperature condition #1, integrated temperature information D temp-2 wherein is lower than self temperature information Dtemp-0 on temperature combination appears.In the case, directly refreshing the pulse that triggers RFTG-2 is " for each the refresh command issue 2 that receives (p-q)Inferior ".This is corresponding to such fact, and for the unit number of the number of times that is defined as reception refresh command once, the number that directly refreshes the issue that triggers RFTG-2 is made as 2 (p-q)More specifically, in the case, output directly refreshes triggering RFTG-2 2 (2-1)Inferior, promptly export continually to receive the refresh command twice.On the other hand, when integrated temperature information D temp-2 indication is equal to or higher than the temperature conditions #2 of self temperature information Dtemp-0 or other higher temperature condition on temperature, directly refresh trigger RFTG-2 be " for receive per 2 (q-p)Individual refresh command issue once ".
For after combination, described rule is as above set up for each situation of self temperature information Dtemp-0 indicated temperature condition #3 or other higher temperature condition wherein.That is to say, be lower than on temperature at the temperature conditions of integrated temperature information D temp-2 in the combination of temperature conditions of self temperature information Dtemp-0, directly refresh and trigger RFTG-2 " for each refresh command issue 2 that receives (p-q)Inferior ".On the other hand, when the temperature conditions of integrated temperature information D temp-2 is when being equal to or higher than the temperature conditions of self temperature information Dtemp-0 on temperature, directly refresh trigger RFTG-2 " for receive per 2 (q-p)Individual refresh command issue once ".So, when self temperature information Dtemp-0 indicated temperature condition #k (promptly, maximum temperature) time, under each situation of one of #k, directly refreshes and trigger RFTG-2 " for each the refresh command issue 2 that receives at integrated temperature information D temp-2 indicated temperature condition #1 (p-q)Inferior ".
Should be noted that in order issue more continually and directly to refresh triggering RFTG-2 than receiving refresh command, so that to be lower than the combination of self temperature information Dtemp-0 on temperature consistent with integrated temperature information D temp-2, possible solution will provide multiplier.This multiplier for example can be used oscillator configuration.That is to say that this oscillator only needs to generate 2 for each pulse that triggers RFTG-1 that refreshes indirectly that provides (p-q)Doubly many pulses.This provides with refreshing indirectly and triggers RFTG-1 to trigger RFTG-1 high by 2 than refreshing indirectly synchronously and on frequency (p-q)Directly refreshing doubly triggers RFTG-2.
As previously mentioned, we suppose to use the variable of representation temperature condition to pass through by equation 1/2 here (k-m)The multiple that provides is provided with refresh rate.The operation of truth table shown in Figure 9 generates according to this refresh rate and with the frequency that is suitable for self temperature information Dtemp-0 always and directly refreshes the pulse that triggers RFTG-2.
In indivedual control models, on the other hand, mode switching signal TRNMODE is " L ".Under this condition, temperature information selects part 610 to operate in the following manner.That is to say, ignore integrated temperature information D temp-2, and for each the temperature conditions #1 that selects temperature information Dtemp-1 oneself indication by output to #k, directly refresh and trigger RFTG-2 " each refresh command for reception is issued ".
Should be noted that, use the configuration of the refresh control circuit 600 of logical circuit to be not limited to configuration shown in Figure 4.Alternatively, refresh control circuit 600 can adopt any circuit arrangement, as long as satisfy for example truth table shown in Fig. 7,8 or 9.
＜2. second embodiment 〉
[example of the general introduction of the accumulator system of piling up]
In the accumulator system 100 according to the present embodiment of describing heretofore, for example there is not specific limited in the physical layout for storer 200 and logical block 300.For example, the layout of the chip of the storer 200 of diverse location and logical block 300 is also included within the first embodiment of the present invention in in-plane.On the contrary, the second embodiment of the present invention is intended to so-called accumulator system of piling up, and wherein the chip of storer 200 and logical block 300 is one by one in stacked on top.For example, the significant physical size that piles up the module that allows accumulator system 200 reduces.
Figure 10 illustrates the example as the physical layout of storer of seeing from the accumulator system of piling up 100 1 sides according to a second embodiment of the present invention 200 and logical block 300.In accumulator system shown in Figure 10 100, at first from top stage (first order) downwards sequence arrangement first to n storer 200-1 to 200-n.Under this condition, logical block 300 is arranged in below the n storer 200-n.
In addition, accumulator system 100 according to a second embodiment of the present invention is used for the TSV (by the silicon through hole) of the electrical connection between the chip of storer 200 and logical block 300.TSV is vertical through-silicon semi-conductor chip and the electrode that is used for substituting traditional wire-bonded interconnection.
Figure 10 is shown in the situation of partial second memory 200-2 formation TSV 400 in each of the n storer 200-n of bottom (at last) level.In the case, on the other hand, provide microlith (microbump) 500, wherein one of TSV 400 of Xing Chenging appearance (emerge) forms the front and back surface of the storer 200-2 of TSV400 to each chip of 200-n therein.By being linked together, microlith 500 realizes and being connected of contiguous top and lower chip.
With this understanding, Figure 10 diagram is provided at the TSV 400 of the same position in second each the chips in-plane to n storer 200-2 to 200-n that piles up.This makes and may form the first shared common signal path to n storer 200-1 to 200-n and between the logical block 300.
Here our hypothesis accumulator system of piling up and the existing temperature information wiring combination of having described before.In the case, self temperature information of each storer must individually be connected to logical block.Therefore, each connection must use different lines to carry out.In addition, these lines can not be shared TSV.As a result, the storer that is positioned at the middle somewhere of the piling up line that must have self temperature information that TSV takes out with the storer that allows above each passes this storer.For example, the level of storer is low more, and the number of TSV that is used for self temperature information is big more.That is to say, in the case, need to make each and have memory chip for the TSV of the different numbers that pile up formation not at the same level.This for example causes the cost that increases, and this is not preferred.
For fear of this problem of prior art, the temperature information of only bottom storer (that is, near the storer of logical block) is provided to logical block.In the case, logical block is controlled to all storeies and is refreshed by only issuing public refresh command based on the temperature information of bottom storer, and this is the simplest in all refresh control schemes.In the storer that piles up, it is low on temperature that top storer is tending towards, because they are near heat radiator, and following storer is tending towards high temperature, because by they heat of holding back apart from generation to heat radiator.That is to say, in the above and between the following storer on temperature the big difference of storage.This feasible for example utmost point is difficult to suitable frequency and refreshes all storeies.On the contrary, in the second embodiment of the present invention, route as described below is used for the wiring of temperature information.
[wiring between the chip]
The example of the physical routing between the chip of Figure 11 diagram accumulator system 100 according to a second embodiment of the present invention.Should be noted that first memory 200-1 shown in Figure 11 and storer shown in Figure 2 are roughly the same in the functional circuit blocks configuration.We suppose that remaining second has identical configuration to n storer 200-2 to 200-n.That is to say that we suppose that first is fabricated to same size to n storer 200-1 to 200-n.In addition, logical block 300 is identical on internal configurations with logical block shown in Figure 1.
In the second embodiment of the present invention, on the other hand, with and the same way as described of reference Fig. 1 between memory chip and logical block chip exchange command CMD and temperature information Dtemp-1 to Dtemp-3.
In the present embodiment, first to n storer 200-1 to 200-n each comprises CMD TSV400a and integrated temperature TSV 400b, as shown in figure 11.
As shown in Figure 1, at first signal path of sharing order CMD to n storer 200-1 to 200-n and between the logical block 300.Therefore, form CMD TSV 400a in first the same position to n storer 200-1 to each chip of 200-n.Next, CMD TSV 400a links together by the contact between the microlith 500 of the chip of mutual vertical vicinity, as shown in figure 11.In addition, CMD TSV400a be connected to first to n storer 200-1 to 200-n command input end of the refresh command demoder 210 in each.In addition, order output terminal of Memory Controller 300 be connected to logical block 300 in the microlith 500 that provides of CMD TSV 400a same position.This makes and may will jointly output to first the refresh command demoder 210 to n storer 200-1 to 200-n from the order CMD of Memory Controller 310 via common signal path.
On the other hand, at first to n storer 200-1 the signal path, also as shown in Figure 1 to shared integrated temperature information D temp-2 between the 200-n.Therefore, integrated temperature TSV 400b forms in first the same position to n storer 200-1 to each chip of 200-n, and separates with CMD TSV 400a.Integrated temperature TSV 400b links together by the contact between the microlith 500 of the chip of mutual vertical vicinity.In addition, integrated temperature TSV 400b be connected to first to n storer 200-1 to 200-n in each integrated temperature information input terminal of refresh control circuit 600.This makes may will jointly be provided to remaining top storer 200-1 to 200-n-1 via common signal path from the integrated temperature information D temp-2 of n storer 200-n.
As shown in Figure 1, on the other hand, select temperature information Dtemp-3 as input from the storer 200 that the output of all the storer outputs except the storer of last level selects temperature information Dtemp-1 must be provided to next stage.In addition, integrated temperature information D temp-2 must select temperature information Dtemp-1 as output from the n storer 200-n output of last level.
In response to more than, the same position on the lower surface of the chip of each storer 200 provides and is suitable for exporting this output and selects the output of temperature information Dtemp-1 to select temperature information microlith 500a.In addition, select temperature information microlith 500a as output, the same position on the top surface of the chip of each storer 200 in the in-plane provides and is suitable for receiving input and selects the input of temperature information Dtemp-3 to select temperature information microlith 500b.Yet should be noted that not to provide input to select temperature information microlith 500b on uppermost first memory 200-1.This guarantees to import the input terminal of selecting temperature information Dtemp-3 and opens a way for the refresh control circuit among the first memory 200-1 600.In addition, on the top surface of the chip of logical block 300 in the in-plane with each storer 200 on output select the same position of temperature information microlith 500a, the integrated temperature information microlith 500c that is suitable for receiving input integrated temperature information D temp-2 is provided.
Then, output selects temperature information microlith 500a and input to select temperature information microlith 500b connecting between the vertical contiguous chip mutually.On the other hand, output selects temperature information microlith 500a and integrated temperature information microlith 500c in the end to connect between the chip of the n storer 200-n of level and logical block 300.This allows to form the signal path of integrated temperature information D temp-2 in accumulator system 100.
Should be noted that output is selected temperature information microlith 500a, input to select temperature information microlith 500b, integrated temperature TSV 400b and is examples of the electrode described in the claim in conjunction with the information microlith 500 that described TSV 400b provides.
Therefore, the second embodiment of the present invention same physical routing structure that allows to be used for temperature information is used for all storeies 200.More specifically, only need provide integrated temperature TSV 400, output to select temperature information microlith 500a and input to select temperature information microlith 500b in the same position on all storeies 200.This makes and may use the storer by with the storer 200 same process manufacturing that will pile up to form accumulator system 100.In addition, this is provided for the simpler wiring of exchange temperature information between storer 200 and logical block 300.
Should be noted that the preferred embodiments of the present invention are only used for realizing example of the present invention.As clearly describing in a preferred embodiment of the invention, there is the correspondence between feature of the preferred embodiments of the present invention and the disclosed in the claims property feature of the present invention.Similarly, the correspondence between the feature of disclosed in the claims property feature of the present invention of existence and same name in a preferred embodiment of the invention.It being understood that to the invention is not restricted to preferred embodiment, but can revise in every way and do not deviate from scope of the present invention.
The application comprises and is involved on the February 22nd, 2010 of disclosed theme in the Japanese priority patent application JP 2010-036311 that Jap.P. office submits to, is incorporated herein by reference in its entirety.
It will be appreciated by those skilled in the art that depending on design requirement various modifications, combination, sub-portfolio and change can occur with other factors, as long as they are in the scope of claim or its equivalent.

Claims (11)

1. memory control apparatus comprises:
Temperature sensor is suitable for the detected temperatures condition to generate self temperature information;
Temperature information is selected part, be suitable for based on by from the selection temperature information temperature indicative condition that provides of memory control apparatus of level before with by self temperature information temperature indicative condition, the selection temperature information that selection provides or self temperature information, and be suitable for exporting select outside output temperature information or self temperature information to the memory control apparatus of next stage as the selection temperature information;
The refresh command receiving unit is suitable for receiving refresh command, and the transmission frequency of this refresh command is according to by integrated temperature information temperature indicative condition setting, and this integrated temperature information promptly is the selection temperature information that the memory control apparatus by last level obtains; And
Trigger issue frequency configuration part, be suitable in response to receiving refresh command, the integrated temperature information that provides based on the memory control apparatus from last level and self temperature information setting refresh and trigger the issue frequency, and this refreshes to trigger makes memory array carry out to refresh.
2. memory control apparatus as claimed in claim 1, wherein
Trigger the issue frequency configuration issue number conduct the refreshing triggering issue frequency that refreshes triggering that receives number for the given unit of refresh command partly is set.
3. memory control apparatus as claimed in claim 2, wherein
Trigger issue frequency configuration part and will be the frequency of the number that is suitable for issuing, and output refreshes temporarily and triggers as refreshing triggering with the issue frequency shift that refreshes triggering of the frequency issue of the reception that is suitable for refresh command temporarily.
4. memory control apparatus as claimed in claim 1 also comprises:
Signal switching part, if interested memory control apparatus is not one of last level, then signal switching part can be operated and form the integrated temperature information that is suitable for from the memory control apparatus of last level and be provided to the signal path that triggers issue frequency configuration part, if memory control apparatus is one of last level, then signal switching part also can be operated and form two signal path, article one, be suitable for to select from temperature information the selection temperature information of part to be provided to triggering issue frequency configuration part, and another is suitable for the selection temperature information is outputed to other exterior storage opertaing device as integrated temperature information as integrated temperature information.
5. memory control apparatus as claimed in claim 1, wherein
If interested memory control apparatus is one of the first order, temperature information selection portion component selections self temperature information then, and export this information as selecting temperature information, and no matter by the selection temperature information temperature indicative condition that provides.
6. memory control apparatus as claimed in claim 1, wherein
When interested memory control apparatus and other memory control apparatus during one by one in stacked on top, be suitable for exporting the lower surface of selecting temperature information to be provided at interested memory control apparatus to the electrode of the memory control apparatus of next stage, and be positioned at the identical position of electrode with the top surface that is suitable for receiving the memory control apparatus of selecting temperature information and being provided at next stage, the memory control apparatus of this next stage is positioned at adjacent with interested memory control apparatus and below interested memory control apparatus.
7. memory control apparatus as claimed in claim 1, wherein
When interested memory control apparatus and other memory control apparatus during one by one in stacked on top, be suitable for selecting the electrode of temperature information to be provided at the top surface of interested memory control apparatus from the memory control apparatus reception of level before, and be positioned at and be suitable for exporting select temperature information and be provided at before the identical position of electrode of lower surface of memory control apparatus of level, should before the memory control apparatus of level be positioned at adjacent and on interested memory control apparatus with interested memory control apparatus.
8. memory control apparatus as claimed in claim 1, wherein
When interested memory control apparatus and other memory control apparatus during one by one in stacked on top, the electrode that is suitable for receiving or export integrated temperature information comprises penetrating electrode, and be positioned at other memory control apparatus as the part of the signal path of integrated temperature information on the identical position of penetrating electrode that provides.
9. memory device comprises:
Memory array;
Temperature sensor is suitable for the detected temperatures condition to generate self temperature information;
Temperature information is selected part, be suitable for based on by from the selection temperature information temperature indicative condition that provides of memory device of level before with by self temperature information temperature indicative condition, the selection temperature information that selection provides or self temperature information, and be suitable for exporting the outside output temperature information of selection or self temperature information to the memory device of next stage as selecting temperature information;
The refresh command receiving unit is suitable for receiving refresh command, and the transmission frequency of this refresh command is according to by integrated temperature information temperature indicative condition setting, and this integrated temperature information promptly is the selection temperature information that the memory control apparatus by last level obtains; And
Trigger issue frequency configuration part, be suitable in response to receiving refresh command, the integrated temperature information that provides based on the memory control apparatus from last level and self temperature information setting refresh and trigger the issue frequency, and this refreshes to trigger makes memory array carry out to refresh.
10. memory apparatus system comprises:
At a plurality of memory devices of stacked on top, each memory device comprises one by one
Memory array;
Temperature sensor is suitable for the detected temperatures condition to generate self temperature information;
Temperature information is selected part, be suitable for before interested memory device level and adjacent with interested memory device before the memory device of level export self temperature information when not existing, this temperature information selects part to be suitable for based on by the selection temperature information temperature indicative condition that provides from the memory device of level before with by self temperature information temperature indicative condition, select the selection temperature information or self temperature information that provide when existing at the memory device of level before, and this temperature information select part to be suitable for exporting to select outside output temperature information or self temperature information to being positioned at interested memory device below and the memory device below adjacent with interested memory device or refresh control equipment as the selection temperature information;
The refresh command receiving unit is suitable for receiving refresh command, and the transmission frequency of this refresh command is according to by integrated temperature information temperature indicative condition setting, and this integrated temperature information promptly is the selection temperature information that is obtained by nethermost memory control apparatus; And
Trigger issue frequency configuration part, be suitable in response to receiving refresh command, the integrated temperature information that provides based on the memory control apparatus from last level and self temperature information setting refresh and trigger the issue frequency, and this refreshes to trigger makes memory array carry out to refresh;
Select the temperature information output electrode, be provided at the lower surface of interested memory device, be used to export and select temperature information to following memory device, this selection temperature information output electrode is positioned at the top surface that is provided at following memory device and is suitable for receiving the identical position of electrode of selecting temperature information
Select the temperature information input electrode, be provided at the top surface of interested memory device, be used for selecting temperature information from the memory device reception of level before, this selection temperature information input electrode is positioned at the lower surface that superincumbent memory device is provided and is suitable for exporting the identical position of electrode of selecting temperature information; And
The integrated temperature information electrode that comprises penetrating electrode is suitable for receiving or output integrated temperature information, this integrated temperature information electrode be positioned at other memory device as the part of the signal path of integrated temperature information on the identical position of penetrating electrode that provides.
11. a memory apparatus system comprises:
One by one stacked on top, all be a plurality of memory devices and the refresh control equipment of chip form, each memory device comprises
Memory array;
Temperature sensor is suitable for the detected temperatures condition to generate self temperature information;
Temperature information is selected part, be suitable for before interested memory device level and adjacent with interested memory device before the memory device of level export self temperature information when not existing, this temperature information selects part to be suitable for based on by the selection temperature information temperature indicative condition that provides from the memory device of level before with by self temperature information temperature indicative condition, select the selection temperature information or self temperature information that provide when existing at the memory device of level before, and this temperature information select part be suitable for exporting the outside output temperature information of selection or self temperature information to being positioned at interested memory device below and the memory device below adjacent with interested memory device or refresh control equipment as the selection temperature information;
The refresh command receiving unit is suitable for receiving refresh command;
Trigger issue frequency configuration part, be suitable for receiving integrated temperature information, this integrated temperature information selection temperature information that bottom memory control apparatus obtains of promptly serving as reasons, and this triggering issue frequency configuration partial response is in receiving refresh command, integrated temperature information and self temperature information setting based on reception refresh triggering issue frequency, and this refreshes to trigger makes the memory array execution refresh;
Select the temperature information output electrode, be provided at the lower surface that interested storage control is equipped with, be used to export and select temperature information to following memory device, this selection temperature information output electrode is positioned at the top surface that is provided at following memory device and is suitable for receiving the identical position of electrode of selecting temperature information;
Select the temperature information input electrode, be provided at the top surface of interested memory device, be used for selecting temperature information from the memory device reception of level before, this selection temperature information input electrode is positioned at the lower surface that superincumbent memory device is provided and is suitable for exporting the identical position of electrode of selecting temperature information; And
The integrated temperature information electrode that comprises penetrating electrode, be suitable for receiving or output integrated temperature information, this integrated temperature information electrode be positioned at other memory device as the part of the signal path of integrated temperature information on the identical position of penetrating electrode that provides, wherein
This refresh control equipment comprises
The command transfer part is suitable for by the broadcasting of basis based on the transmission frequency of the integrated temperature information setting that receives from bottom memory control apparatus, and the transmission refresh command arrives each memory device, and
Integrated temperature information input electrode, be provided at the top surface of refresh control equipment, be used to receive integrated temperature information, and this integrated temperature information input electrode be positioned at be positioned at refresh control equipment above and the identical position of selection temperature information output electrode of the bottom memory device adjacent with refresh control equipment.
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