CN102157353B - 一种高导热集成电路用金刚石基片的制备方法 - Google Patents
一种高导热集成电路用金刚石基片的制备方法 Download PDFInfo
- Publication number
- CN102157353B CN102157353B CN2010105788376A CN201010578837A CN102157353B CN 102157353 B CN102157353 B CN 102157353B CN 2010105788376 A CN2010105788376 A CN 2010105788376A CN 201010578837 A CN201010578837 A CN 201010578837A CN 102157353 B CN102157353 B CN 102157353B
- Authority
- CN
- China
- Prior art keywords
- substrate
- diamond
- diamond film
- doped
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 101
- 239000010432 diamond Substances 0.000 title claims abstract description 101
- 239000000758 substrate Substances 0.000 title claims abstract description 78
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000002131 composite material Substances 0.000 claims abstract description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 16
- 239000010439 graphite Substances 0.000 claims abstract description 16
- 230000007704 transition Effects 0.000 claims abstract description 14
- 238000000151 deposition Methods 0.000 claims abstract description 12
- 238000002360 preparation method Methods 0.000 claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 238000000227 grinding Methods 0.000 claims abstract description 3
- 239000007789 gas Substances 0.000 claims description 47
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 32
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 28
- 239000001257 hydrogen Substances 0.000 claims description 26
- 229910052739 hydrogen Inorganic materials 0.000 claims description 26
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 24
- 239000000126 substance Substances 0.000 claims description 20
- 229910052786 argon Inorganic materials 0.000 claims description 16
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 13
- 229910052796 boron Inorganic materials 0.000 claims description 13
- 229910052750 molybdenum Inorganic materials 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 9
- 239000013598 vector Substances 0.000 claims description 8
- 238000010891 electric arc Methods 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 7
- 230000014759 maintenance of location Effects 0.000 claims description 7
- 230000003746 surface roughness Effects 0.000 claims description 7
- 230000008676 import Effects 0.000 claims description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 238000001556 precipitation Methods 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 239000000463 material Substances 0.000 abstract description 6
- 238000005498 polishing Methods 0.000 abstract description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052802 copper Inorganic materials 0.000 abstract description 3
- 239000010949 copper Substances 0.000 abstract description 3
- 230000008901 benefit Effects 0.000 abstract description 2
- 230000006911 nucleation Effects 0.000 abstract 1
- 238000010899 nucleation Methods 0.000 abstract 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 15
- 239000004327 boric acid Substances 0.000 description 15
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 8
- 239000011733 molybdenum Substances 0.000 description 8
- 239000010440 gypsum Substances 0.000 description 5
- 229910052602 gypsum Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010105788376A CN102157353B (zh) | 2010-12-03 | 2010-12-03 | 一种高导热集成电路用金刚石基片的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010105788376A CN102157353B (zh) | 2010-12-03 | 2010-12-03 | 一种高导热集成电路用金刚石基片的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102157353A CN102157353A (zh) | 2011-08-17 |
CN102157353B true CN102157353B (zh) | 2012-03-21 |
Family
ID=44438768
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010105788376A Expired - Fee Related CN102157353B (zh) | 2010-12-03 | 2010-12-03 | 一种高导热集成电路用金刚石基片的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102157353B (zh) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104465341B (zh) * | 2014-12-05 | 2017-05-17 | 北京科技大学 | 一种金刚石膜表面选区扩散形成p‑n结的制备方法 |
CN104962876B (zh) * | 2015-06-12 | 2017-12-19 | 西南科技大学 | 石墨表面掺硼金刚石薄膜材料及其制备方法 |
CN105331948B (zh) * | 2015-09-25 | 2017-11-28 | 北京科技大学 | 一种表面p型导电金刚石热沉材料的制备方法 |
GB201701173D0 (en) * | 2017-01-24 | 2017-03-08 | Element Six Tech Ltd | Synthetic diamond plates |
CN107312958A (zh) * | 2017-06-07 | 2017-11-03 | 北京科技大学 | 一种金刚石‑阀金属复合电极材料及其制备方法 |
CN107545936A (zh) * | 2017-08-22 | 2018-01-05 | 廊坊西波尔钻石技术有限公司 | 金刚石膜与石墨复合材料 |
CN111675396B (zh) * | 2020-05-11 | 2023-06-30 | 江苏净钻环保科技有限公司 | 一种能源清洁的电-膜耦合水处理***和处理水的方法 |
CN111675417B (zh) * | 2020-05-11 | 2022-10-18 | 江苏净钻环保科技有限公司 | 一种磁性吸附辅助光电催化氧化水处理***和处理水的方法 |
CN111646611B (zh) * | 2020-05-11 | 2022-07-05 | 南京岱蒙特科技有限公司 | 一种超声臭氧耦合光电催化水处理***和处理水的方法 |
CN111663113B (zh) * | 2020-05-11 | 2022-06-21 | 江苏净钻环保科技有限公司 | 一种含dlc表面修饰层的超高比表面积梯度掺硼金刚石电极及其制备方法与应用 |
CN111635067B (zh) * | 2020-05-11 | 2022-09-27 | 南京岱蒙特科技有限公司 | 一种紫外辅助超声耦合电催化氧化水处理***和处理水的方法 |
CN111593316B (zh) * | 2020-05-11 | 2022-06-21 | 南京岱蒙特科技有限公司 | 一种高比表面积超亲水的梯度硼掺杂金刚石电极及其制备方法和应用 |
CN111675421B (zh) * | 2020-05-11 | 2022-07-22 | 南京岱蒙特科技有限公司 | 一种高效节能控温水处理***及其处理水的方法 |
CN111519163B (zh) * | 2020-05-11 | 2022-05-24 | 南京岱蒙特科技有限公司 | 一种高导电长寿命高比表面积的硼掺杂金刚石电极及其制备方法和应用 |
CN114551653B (zh) * | 2022-01-20 | 2023-08-22 | 北京大学 | 一种利用图形化金刚石材料改善Micro-LED通信性能的方法及器件 |
CN114501828A (zh) * | 2022-02-21 | 2022-05-13 | 太原理工大学 | 一种高效散热金刚石印刷电路板的制备方法 |
CN114892141A (zh) * | 2022-05-10 | 2022-08-12 | 化合积电(厦门)半导体科技有限公司 | 一种金刚石膜片制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1500718A1 (en) * | 2003-07-24 | 2005-01-26 | Shin-Etsu Chemical Company, Ltd. | Method for producing diamond film |
CN101447418A (zh) * | 2008-12-30 | 2009-06-03 | 山东泉舜科技有限公司 | 采用硼掺杂在金刚石表面制备半导体导电膜的方法 |
US7727798B1 (en) * | 2009-01-27 | 2010-06-01 | National Taipei University Technology | Method for production of diamond-like carbon film having semiconducting property |
-
2010
- 2010-12-03 CN CN2010105788376A patent/CN102157353B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1500718A1 (en) * | 2003-07-24 | 2005-01-26 | Shin-Etsu Chemical Company, Ltd. | Method for producing diamond film |
CN101447418A (zh) * | 2008-12-30 | 2009-06-03 | 山东泉舜科技有限公司 | 采用硼掺杂在金刚石表面制备半导体导电膜的方法 |
US7727798B1 (en) * | 2009-01-27 | 2010-06-01 | National Taipei University Technology | Method for production of diamond-like carbon film having semiconducting property |
Also Published As
Publication number | Publication date |
---|---|
CN102157353A (zh) | 2011-08-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102157353B (zh) | 一种高导热集成电路用金刚石基片的制备方法 | |
CN103911596B (zh) | 一种制备金刚石膜的装置及使用该装置制备金刚石膜的方法 | |
CN104087909B (zh) | 一种立方碳化硅薄膜的制备方法 | |
CN104498902B (zh) | 一种常压化学气相沉积石墨烯薄膜的制备方法 | |
CN105506576A (zh) | 一种高品质自支撑金刚石厚膜的制备方法 | |
CN105331948B (zh) | 一种表面p型导电金刚石热沉材料的制备方法 | |
CN109722641A (zh) | 金刚石/石墨烯复合导热膜及其制备方法和散热*** | |
CN102296362A (zh) | 单结晶金刚石生长用基体材料以及单结晶金刚石基板的制造方法 | |
WO2013013419A1 (zh) | 一种在绝缘基底上制备石墨烯纳米带的方法 | |
JP2008053343A (ja) | 炭化珪素半導体エピタキシャル基板の製造方法 | |
CN103045983B (zh) | 一种表面含钨涂层的碳纤维基高温隔热材料的制备方法 | |
CN107523828B (zh) | 一种GaN与金刚石复合散热结构的制备方法 | |
CN108385086A (zh) | 基片台***及利用该***提高金刚石膜生长均匀性的方法 | |
CN101323982B (zh) | 一种高质量立方氮化硼薄膜的制备方法 | |
US20230260841A1 (en) | Method for producing a composite structure comprising a thin layer of monocrystalline sic on a carrier substrate of polycrystalline sic | |
CN108193276A (zh) | 制备大面积单一取向六方氮化硼二维原子晶体的方法 | |
CN108977881A (zh) | 一种抑制单晶金刚石棱边多晶化的方法 | |
CN104947068A (zh) | 一种金刚石热沉片的制备方法 | |
CN101303973A (zh) | 一种n-ZnO/p-自支撑金刚石薄膜异质结的制备方法 | |
CN115763221A (zh) | 复合衬底及其制备方法、半导体器件 | |
CN101174558A (zh) | 立方氮化硼薄膜的p型掺杂方法 | |
CN113089093B (zh) | 金刚石半导体结构的形成方法 | |
CN104018124B (zh) | 一种半导体材料SiC薄膜的制备工艺 | |
CN107902650B (zh) | 超纳米金刚石表面上制备单层石墨烯的方法 | |
JP7172556B2 (ja) | 多結晶ダイヤモンド自立基板の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20110817 Assignee: Shaoxing Hongye source Investment Limited Assignor: University of Science and Technology Beijing Contract record no.: 2015990000904 Denomination of invention: Method for preparing diamond substrate for high-heat-conductivity integrated circuit Granted publication date: 20120321 License type: Exclusive License Record date: 20151030 |
|
LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Liu Jinlong Inventor after: Li Chengming Inventor after: Zhang Yingying Inventor after: Chen Liangxian Inventor after: Heilifu Inventor after: Lv Fanxiu Inventor before: Li Chengming Inventor before: Liu Jinlong Inventor before: Zhang Yingying Inventor before: Chen Liangxian Inventor before: Heilifu Inventor before: Lv Fanxiu |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120321 |