CN102157327B - Gas supply structure of substrate processing apparatus - Google Patents

Abstract

The invention relates to a gas supply structure of a substrate processing apparatus. Nozzles are arranged on the upper part of a chamber in a quadrangular annular structure, or the spray surfaces of the nozzles are curved and the spray openings form radial structure, so that process gas can be sprayed in an evener manner in the chamber, evener plasmas can be formed, and that the etching treatment properties can be improved.

Description

The gas supply structure of substrate board treatment

Technical field

The present invention relates to a kind ofly in chamber, produce plasma and carry out the gas supply structure of the substrate board treatment of substrate surface treatment process.

Background technology

Large scale integrated circuit (LSI:Large Scale Integrated Circuit) or the such electronic device of panel display apparatus (FPD:Flat Panel Display) will be carried out vacuum processing technique to substrate in manufacture process.

This vacuum processing technique is, in chamber, import gas, by electrion, produce plasma, and the accelerative force of utilizing this plasma makes material on substrate surface with the method for physics mode splash (sputter), and utilize the spike of plasma with chemical mode, to decompose the method for the material on substrate surface.

According to the method that forms plasma, utilize the processing substrate technology of plasma can be divided into plasma etching (PE:Plasma Etching), reactive ion etching (RIE:Reactive Ion Etching), magnetic intensified response ion(ic) etching (MERIE:Magneticaly Enhanced Reactive Ion Etching), electron cyclotron resonace (ECR:Electron Cyclotron Resonance), conversion coupled plasma (TCP; Transformer Coupled Plasma) and inductively coupled plasma (ICP:Inductively Coupled Plasma) etc.

Particularly, the uniformity of the plasma density on the formation of high-density plasma and glass (or semiconductor) substrate, has a great impact deposition or etching performance tool.For this reason, conversion various ways has been developed the method for generation of plasma, and one of them is inductively coupled plasma producing method (ICP:Inductively Coupled Plasma).

This inductively coupled plasma mode is, utilization is when dielectric outside winding around changes electromagnetic field, portion produces induced field and in reaction chamber, forms the faradic principle of consequent secondary in coil, produces the method for high-density plasma.

Utilize ICP method substrate board treatment structure normally, the lower electrode that possesses mounted board in the inner lower of chamber, top at chamber or the guiding carrier that engages with this chamber possesses the antenna that applies RF power supply, and on one side to supply response gas in chamber, produce plasma on one side, thereby can carry out substrate surface treatment process.

Substrate board treatment as above is to the structure of spray technology gas in chamber, has direct injection method and showerhead approach.

According to the structure of spray technology gas in chamber, not only can form plasma more uniformly, the deposition of substrate or etch processes performance are also produced a very large impact, so requirement meets the gas injection structure of the substrate board treatment of maximization.

Background technology content described above is the technical information that present inventor has in order to derive the present invention or acquires in derivation process of the present invention, and not talkative must be that the present patent application is before to the disclosed known technology of general public.

Summary of the invention

The present invention proposes in order to address the above problem, its object is to provide a kind of gas supply structure of substrate board treatment, shower nozzle is configured with quadrangular ring-shaped structure, so that to spray technology gas equably in chamber, thereby not only can form uniform plasma, can also improve deposition or etch processes performance.

In order to realize above-mentioned problem, the gas supply structure of the substrate board treatment the present invention relates to, have: guiding carrier, possesses the gabarit frame of the external profile surface that forms polygon framework and be arranged on the inside of described gabarit frame and separate center window and the separation frame of the periphery window of this center window periphery; Shower nozzle, configures with polygon circulus in the bottom surface of described separation frame, to chamber interior spray technology gas.

Now, can be also, the jet face of described shower nozzle forms with horizontal plane, and the gas ejection ports forming on this horizontal plane vertically forms.

Moreover, can be also, the jet face of described shower nozzle is with Surface forming, and the gas ejection ports forming on this curved surface forms radial structure.

Also having, can be also that described shower nozzle is not only formed on the bottom surface of described separation frame, is also formed on the side of center window side.

In addition, can be also, the gabarit frame of described guiding carrier be formed by quadrilateral frame body structure, and described shower nozzle configures with quadrangular ring-shaped structure.

Preferably, on the separation frame of quadrangle shape that forms described center window, near tetragonal each corner portion, connect respectively gas introduction tube, can to described shower nozzle, supply with process gas by the internal flow path of separation frame.

In order to realize above-mentioned problem, the gas supply structure of the substrate board treatment the present invention relates to, possessing can be to the shower nozzle of spray technology gas in chamber, and the jet face of described shower nozzle forms curved surface, and the gas ejection ports forming on this curved surface forms radial structure.

The technical way of technical solution problem of the present invention as above illustrates more specifically, clear and definite by the illustration of " embodiment of invention " by the following describes or appended " accompanying drawing " etc., except the technological means of above-mentioned main technical solution problem, will append explanation according to the technological means of multiple technical solution problem of the present invention.

In the gas supply structure of the substrate board treatment the present invention relates to, shower nozzle is configured in the top of chamber with quadrangular ring-shaped structure, can be to spray technology gas equably in chamber, therefore, can form uniform plasma, there is the effect that improves deposition or etch processes performance.

And, due to the jet face of shower nozzle in the present invention with curved-surface structure form, jet forms radial structure, therefore, has the effect of spray technology gas more equably.

Accompanying drawing explanation

Fig. 1 is the cutaway view that illustrates the substrate board treatment the present invention relates to.

Fig. 2 is the stereogram that illustrates the guiding carrier of the substrate board treatment the present invention relates to.

Fig. 3 is the vertical view that is illustrated in an embodiment of the structure that disposes antenna on the guiding carrier of the substrate board treatment the present invention relates to.

Fig. 4 is the vertical view that is illustrated in another embodiment of the structure that disposes antenna on the guiding carrier of the substrate board treatment the present invention relates to.

Fig. 5 means the major part stereogram on the guiding carrier top of process gas supply structure shown in the substrate board treatment the present invention relates to.

Fig. 6 is the cutaway view along the A-A direction of Fig. 5.

Fig. 7 means the stereogram in the bottom surface direction of the center window of process gas injection structure shown in the substrate board treatment the present invention relates to.

Fig. 8 to Figure 10 is the general profile chart that a plurality of embodiment of the process gas injection structure in the substrate board treatment the present invention relates to are shown.

Figure 11 illustrates antenna cooling structure in the substrate board treatment the present invention relates to and the vertical view of insulation board heating arrangement.

Figure 12 means the cutaway view of the vortex generator that and insulation board cooling for antenna heats in the present invention.

Figure 13 is the cutaway view along the B-B direction of Figure 11.

Figure 14 is the cutaway view that the antenna forming in the present invention is shown.

Figure 15 illustrates the vertical view that energy loss shown in the substrate board treatment the present invention relates to reduces an embodiment of structure.

Figure 16 illustrates the vertical view that energy loss shown in the substrate board treatment the present invention relates to reduces another embodiment of structure.

Figure 17 means the major part enlarged drawing of Figure 16.

Figure 18 means the major part enlarged drawing of another embodiment different from Figure 17.

Figure 19 is for illustrating that energy loss of the present invention reduces the reference diagram of the effect of structure.

Embodiment

Below, with reference to the accompanying drawings of the preferred embodiments of the present invention.

When the structure of explanation a plurality of embodiment of the present invention, to same or similar structure division is attached, give identical Reference numeral, and omit repeat specification.

Fig. 1 is the schematic configuration cutaway view of the substrate board treatment that relates to of diagram one embodiment of the invention.

The substrate board treatment the present invention relates to comprises: chamber body 11, be arranged in this chamber body and the substrate of mounted board S carries platform 15 and lower electrode 17, with the guiding carrier 20 of the upper bond of described chamber body 11, be arranged on a plurality of windows 30 on this guiding carrier 20, be configured in antenna 40 on these windows 30 and RF power supply applying unit 50 and to the process gas supply unit 60 of the chamber 10 internal feed process gass that formed by chamber body 11 and guiding carrier 20.

Describe the principal character structure division of the substrate board treatment the present invention relates to as above in detail.

First, with reference to Fig. 2 to Fig. 3, guiding carrier 20 is described.

Guiding carrier 20 is formed by four frame body structures, and its inner side has the separation structure of five windows 30 of whole formations.

For this reason, guiding carrier 20 comprises the gabarit frame 21 of the external profile surface that forms four frame bodies and in the inside of this gabarit frame 21, interconnects and separate the separation frame 25 of five windows 20.

Five windows 30 that form in guiding carrier 20 comprise and are positioned at the center window 30A of guiding carrier 20 middle bodies and are configured in this center window 30A four periphery window 30B around.

Center window 30A and periphery window 30B all consist of four side window structures, represent the structure that four periphery window 30B configure in the direction of the clock centered by center window 30A in the accompanying drawing of the present embodiment.Certainly, periphery window 30B also can be by counterclockwise configuration centered by center window 30A.

When each periphery window 30B has quadrilateral structure, its by separate another periphery window of center window 30A and clockwise front side 30B first side a, separate this periphery window 30B and form with the Second Edge b of another periphery window of clockwise rear side 30B, the 3rd limit c opposite with first side a and that contact with the external profile surface of guiding carrier 20 and the 4th limit d opposite with Second Edge b and that contact with the external profile surface of guiding carrier.

Now, preferably the first side a of each periphery window 30B contacts with the Second Edge b ' of front side periphery window 30B with the one side of center window 30A, and the structure that all periphery window 30B configure continuously in the direction of the clock centered by center window 30A forms.

And each periphery window 30B in the direction of the clock first side a and Second Edge b is formed by described separation frame 25, the 3rd limit c and the 4th limit d are formed by described gabarit frame 21.

Therefore, arbitrary in four faces of each periphery window 30B and center window 30A contacts, and four periphery windows centered by center window by clockwise or counterclockwise configuration continuously, on the whole evenly configuration.

In center window 30A and periphery window 30B with said structure configuration, the insulation board 31 consisting of ceramic material etc. insert to be set, and, in the inside portion of gabarit frame 21 and the both sides of each separation frame 25, be formed with the plate support portion 22 of the ledge structure of the external profile surface that can support described insulation board 31.

And, in order to prevent that the insulation board 31 arranging at described each window 30 from departing from, stationary fixture 23,26 is set on gabarit frame 21 and separation frame 25, as shown in drawings, the cross section that is arranged on the stationary fixture 23 on gabarit frame 21 can form by L shaped structure, and the cross section that is arranged on the stationary fixture 26 on separation frame 25 can form by U-shaped structure.

The stationary fixture 26 of described U-shaped structure can support the insulation board 31 of both sides centered by a partition wall simultaneously.

These stationary fixtures 23,26 preferably utilize link etc. to be fixed on guiding carrier 20.

Such stationary fixture 23,26 can carry out multiple change according to its shape of implementation condition and structure.

In addition, with reference to accompanying drawing 3, on the gabarit frame 21 of described guiding carrier 20, can be formed with and can make to heat the heating channel 24a that the fluid of guiding carrier flows through.Certainly, in a side of gabarit frame 21, can have with described heating channel 24a and outside supply and add the discrepancy jointing 24b that the pipeline of hot fluid is connected.

And, on the separation frame 25 of described guiding carrier 20, be formed with the antenna more relatively low than other parts and pass through portion 27, can make the periphery antenna 45 describing in detail pass through below.With reference to accompanying drawing 2, on the separation frame 25 of separating periphery window 30B and periphery window 30B, form antenna by portion 27.

The antenna that Reference numeral in Fig. 3 28 represents to be arranged on separation frame 25 by portion 27 for the antenna fixing stand of fixed antenna.Also have, Reference numeral 29 represents the antenna stationary fixture of cover antenna fixed support 28 to prevent that periphery antenna 45 from departing from.Now, antenna stationary fixture 29 is also preferably formed by U-shaped structure, and, can also carry out the effect of fixed insulation plate 31 simultaneously.

On the other hand, illustrated the structure that guiding carrier 20 forms with four frame body structures in the above, but be not limited thereto, guiding carrier 20 can be five frame bodies, hexagon framework etc., can carry out various deformation enforcement according to implementation condition.

Below, with reference to Fig. 3 and Fig. 4, the configuration structure of the antenna 40 of the substrate board treatment with guiding carrier 20 structures as above is described.

With reference to Fig. 3, two central antennas 41 are set on the center window 30A of guiding carrier 20, on four periphery window 30B, four periphery antennas 45 are set.

Two central antennas 41 are imported at the center of guiding carrier, thus two antennas 40 that configuration is rotated in the direction of the clock in center window 30A.

The structure of four periphery antennas 45 can be that an antenna is imported at each periphery window 30B, connects successively in the direction of the clock by other three periphery window 30B.With reference to Fig. 3, illustrate, the first periphery antenna 451, since the first periphery window 301, passes through in the direction of the clock second week side window mouth 302, the 3rd periphery window 303 and is connected to 4th week side window mouth 304; The second periphery antenna 452 is from second week side window mouth 302, in the direction of the clock through the 3rd periphery window 303,4th week side window mouth 304 and be connected to the first periphery window 301.Now, the second periphery antenna 452 divides since the inside portion of the first periphery antenna 451, the 3rd periphery antenna 453 and 4th week limit the antenna 454 also mode identical with described the first periphery antenna 451 and the second periphery antenna 452 connect, thereby form, be all coil form structure, four periphery antennas 45 with equidistant from distance and the structure that configures regularly.

In accompanying drawing, Reference numeral 401 represents the part that central antenna 41 or periphery antenna 45 are imported into, and Reference numeral 405 represents to be configured in central antenna 41 and the position of periphery antenna 45 end and the end fixed body that can be connected with the part of each antenna 40 ground connection.

And, preferably on described antenna fixing stand 28, thering are three antenna insertion section 28a, antenna insertion section 28a can insert and fix by three periphery antennas 45 of separation frame 25.Also have, at antenna stationary fixture 29 (with reference to Fig. 2) described in the upper bond of antenna fixing stand 28, thereby can be stably fixing periphery antenna 45.

The configuration structure of guiding carrier 20 as above and antenna 40, by a plurality of periphery windows centered by the center window by guiding carrier and the configuration structure of antenna, plasma generation direction in chamber is exerted an influence, thereby, plasma density when processing substrate technique not only, at the mid portion of chamber, also even in neighboring area, can be formed uniformly on the whole.And, in surrounding's formation vortex flow (eddy current) of separation frame 25, on forming uniform plasma generation impact.Its result, can improve processing performance by the configuration structure of guiding carrier 20 as above and antenna 40.

Fig. 4 is the schematic diagram illustrating from the antenna configuration structure of above-mentioned other different embodiment.

Antenna 40 shown in Fig. 4 ' structure be, central antenna 41 ' and periphery antenna 45 ' according to the central antenna 41 with shown in Fig. 3 and the contrary direction setting of periphery antenna 45.

And four periphery antennas 45 ' be are branched off into the structure of two from a lead-in wire and form a pair of 45a, on four periphery window 30B, dispose four pairs of periphery antennas 45 ', form on the whole coil form structure.

Below, with reference to Fig. 5 to Figure 10, importing and the injection structure of the process gas in the substrate board treatment with guiding carrier 20 structures is as mentioned above described.

The present invention forms shower nozzle 61 (with reference to accompanying drawing 7) structure on the separation frame 25 of separating described center window 30A, so that spray technology gas.That is, due to center window, 30A forms with quadrilateral structure, therefore, on the separation frame 25 on four limits of separating it, forms shower nozzle 61, thereby can spray technology gas.

Fig. 7 is the schematic diagram of observing the middle body of guiding carrier 20 from below, with reference to the accompanying drawings of shower nozzle 61.

On the separation frame 25 that forms each limit, arranged to formation rule the shower nozzle 61 of a plurality of jet 62a.Accompanying drawing 7 is exemplified with near four limits the corner portion except center window 30A, and formation can be distinguished shower nozzle 61 structures of spray technology gas.

The structure of preferred this shower nozzle 61 is, forms the recess 63 (with reference to accompanying drawing 6) of process gas process, and in the assembling of the outside of this recess 63, be formed with the shower plate 62 of a plurality of jet 62a in the bottom on each limit of separation frame 25.

Fig. 8 to Figure 10 is the transverse sectional view of the separation frame 25 that comprises shower plate 62, with reference to the accompanying drawings of the various embodiments of the injection structure of shower nozzle 61.

The injection structure of shower nozzle 61 is, in the bottom surface of separation frame 25, forms jet face 62b, and now, as shown in Figure 8, jet face 62b forms with horizontal structure, and jet 62a can vertically form.

And as shown in Figure 9, jet face 62b ' forms with annular (semicircle, half elliptic etc.) structure, and jet 62a ' can form by the structure of radial structure diffusion on annular spray face.Such annular spray face 62b ' and the structure of radial jet 62a ' belong to simple structure, can make process gas spread and be ejected in chamber equably, thereby can improve process efficiency.

In addition, as shown in figure 10, not only in the bottom surface of separation frame 25, still form jet face in side

The structure of 62b ", can have in bottom surface and side and form respectively jet 62a ".Now, the side jet 62a " formation of preferably penetrating process gas to center window 30A side spray.

Below, with reference to Fig. 5 and 6, illustrate to thering is the structure of the shower nozzle 61 supply process gass of the various embodiments of structure as mentioned above.

Process gas supply structure can have various structures according to implementation condition, but, in the present embodiment, represented to form gas inflow entrance 64 (with reference to accompanying drawing 6) near four corner portions of center window 30A, and form this gas inflow entrance 64 separation frame 25 upper vertical be connected with the structure of gas introduction tube 65.

Now, can make the gas supplied with by a gas introduction tube 65 centered by the corner portion of center window 30A along the stream path forming on separation frame to a certain side direction or two side directions supply with.Now, when being configured to can flow to two side directions time, groove 63 mid portions of formation stream that can be on each limit form partition walls.

Because four corner portions at center window 30A arrange gas introduction tube 65, so there is not to form intrusively gas supply structure with the stationary fixture 26,29 of fixed insulation plate 31.

Reference numeral 65a, 65b represent the flange portion of gas introduction tube 65, and it is upper that upper flange 65a is fixed on the upside covered structure thing of chamber etc., and lower flange 65b is fixed on guiding carrier 20.

Like this, can centered by center window 30A, form four gas introduction tubes 65, with reference to accompanying drawing 5, a gas supply main 66a to four gas introduction tube 65 supply gas is divided into two the first supply pipe 66b, and this first supply pipe 66b is divided into two the second supply pipe 66c again, each second supply pipe 66c is connected with each gas introduction tube 65 afterwards.

The shower nozzle 61 of take is above illustrated by forming as example of four limit loop configuration configurations, but is not limited thereto, and according to the structure of described guiding carrier 20, shower nozzle 61 can carry out numerous variations enforcement with the structure of pentagon or hexagon-shaped configuration.

Below, with reference to Figure 11 to Figure 14, cooling structure and insulation board 31 heating arrangements of described antenna 40 are described.

The structure that adds thermal insulation panel 31 is to form and can spray the water back 71 that adds hot-air on the top of insulation board 31.

As long as the configuration structure of water back 71 is to add equably the structure of thermal insulation panel 31 comprehensively, can carries out suitable design according to implementation condition and form.The present embodiment shown in the drawings of form respectively two heater wires on each periphery window 30B, center window 30A imports the structure that the heater wire that is configured in periphery window 30B adds thermal insulation panel 31.Now, heater wire is by window top along continuous straight runs configuration and be formed with towards the water back 71 of the jet of window direction and form.

Certainly, water back 71 at the antenna on window top, is configured to ratio antenna low or high for interference configuration not.

In addition, in Figure 11, the heater wire 71a being connected between water back 71 consists of the pipeline with the caliber relatively less than other water back 71, or can not form heater wire 71a.

Form like this water back 71 that adds thermal insulation panel 31, can reduce in the inner side of chamber 10 polymer (Polymer) and be deposited on insulation board 31.

To described water back 71, supply with the method that adds hot-air, can supply with the pipeline that adds hot-air by connection and form various structures, still, in the present embodiment, utilized vortex generator (VortexGenerator) 73.To this, with reference to accompanying drawing 12, describe below.

Secondly, as shown in figure 14, each antenna 40,41,45 pipe shapes with hollow form the structure of cooling antenna 40, and make cooling fluid by its inner next cooling antenna.

Now, the structure of cooling flowing path can be the inner cooling fluid that flows into of introduction part side direction antenna from antenna 40, discharges the formation of cooling fluid from the terminal part side of antenna 40.The loop structure that cooling fluid passes through in the inside of antenna 40 belongs to common practise, therefore detailed.

But, in an embodiment of the present invention, be to utilize vortex generator 73 can implement insulation board heating and the cooling structure of antenna, be described below.

Vortex generator 73 is to utilize nozzle simple in structure and round tube, without any chemical action or combustion in the situation that, compressed air is separated into the energy separation device of Cryogenic air and high temperature air, as shown in figure 12, when compressed air is supplied with vortex tube 74 by pipe arrangement, be fed into for the first time rotating room 75 and carry out superfast rotation.This rotary air flows to hot air outlet side, and now, the air-flow of eddy current, through being positioned at the more area of low pressure of eddy current inner side for the first time, flows to cold air outlet side after loses heat for the second time.Now, in two air streams of rotation, the air particles of internal gas flow is identical with the air particles of the outer gas stream rotation time once, so actual motion speed is lower than outer gas stream.The difference account for motion energy of this movement velocity reduces, and the kinergety of this loss converts heat to and improve the air themperature of outer gas stream, and the temperature of internal gas flow further declines.

The cooling flowing path that connects respectively described water back 71 and antenna 40 in the both sides of this vortex generator 73, thus by importing simple structure, realize the structure of cooling antenna 40 when adding thermal insulation panel 31.

Conduct in the above provides the structure that adds hot-air and cooling-air for example to understand vortex generator 73, but is not limited thereto, and also can utilize the structure of other cooler or independent heating air supply unit and cooling-air feed unit to form.

Below, with reference to Figure 15 to Figure 19, illustrate and in the substrate board treatment the present invention relates to as above, can make the Minimal energy loss of chamber inner wall part and can guarantee that the energy loss of plasma uniformity reduces the structure of device.

As shown in Figure 15 and Figure 16, lining guard board 81 is set on the wall of chamber 10, now, lining guard board 81 tightens to be sticked in the corner that comprises chamber 10 chamber wall partly and puts.

Figure 15 is illustrated in the interior sidewall surface (the W part of Fig. 1) of guiding carrier 20 described above and above centered by corner part, to two side walls, extends the structure that is provided with lining guard board 81.

The inner side that Figure 16 is illustrated in guiding carrier 20 does not form the situation of above-mentioned separation frame 25 (with reference to accompanying drawing 2), or is not in guiding carrier 20 sides but the structure of lining guard board 81 is set in the inside of chamber 10 main bodys.Now, lining guard board 81 is the component parts that are called as liner or backplate, can comprise by L shaped structure form and be arranged on chamber 10 corner portion corner portion backplate 82 and by plane-shaped structure, form and be arranged on the wall backplate 83 on the wall of chamber 10.

Described lining guard board 81 can carry out anodic oxidation and form at aluminium material surface.

And in the embodiment shown in Figure 16, lining guard board 81 can only carry out anodized and form the aluminium material surface of corner portion backplate 82.Now, wall backplate 83 can coated ceramic material and is formed.

Now, preferably corner portion's backplate 82 and wall backplate 83 mutually the part of assembling with notch cuttype structure, be bonded with each other, and, preferably can not height of formation in chamber wall poor.

Described corner portion backplate 82 is as the C part of Figure 17, and corner part in inner side can form inclined plane with respect to the wall of chamber.

In addition, energy loss of the present invention reduces structure and is, at the rear of described corner portion backplate 82, forms the hole 12 of permeate chamber locular wall, and the capacitor 85 (Capacitor) being electrically connected to corner portion backplate 82 is set in this hole 12.Now, capacitor 85 is connected or ground connection with external circuit.

As shown in Figure 15 to Figure 17, capacitor can run through after the corner portion of described chamber 10, is connected with the back side of corner portion backplate 82.Now, in the corner portion of chamber 10, along diagonal, run through and be formed with the hole 12 that can insert installation capacitor 85.

Unlike this, also can there are a plurality of described capacitors 85 as shown in figure 18, centered by the corner portion of chamber 10, in two side walls, be connected and form with the back side of corner portion backplate 82 respectively.Now, on the wall of the corner portion side of chamber 10, be formed with respectively the hole 12 that can insert and install each capacitor 85.

Although attached not shown, preferably install in the hole 12 of capacitor 85, have can sealed chamber inside seal member (not shown).

Capacitor 85 as above can be connected with screw thread combination with corner portion backplate 82.Now, preferably the rear of corner portion backplate 82 is extruded with boss 84, have threaded portion 86, and threaded portion 86 is attached on boss 84 on capacitor 85.In the hole 12 of chamber, there is the boss insertion section 13 that can insert installation base 84.

Thus, lining guard board 81, boss 84, threaded portion 86, capacitor 85 and the external circuit that is connected with capacitor 85 have the structure of mutual electrical connection.

Preferably on the outer side surface of chamber 10, be provided for the supporting cover 88 of support capacitor 85.Supporting cover 88 so long as can maintain the supporting construction of the state in the hole 12 that described capacitor 85 is inserted in chamber, can carry out numerous variations enforcement.

And described capacitor 85 can consist of vacuum variable type capacitor.Vacuum variable type capacitor has known capacitor arrangement, description will be omitted concrete structure.But, the vacuum variable type capacitor in the present invention, preferably the outside by chamber regulates the structure of the electric capacity of the control capacitor that the mode of the capacitance adjustment member 89 such as (rotation regulate) can be suitable.

The reason of the electric capacity of regulating capacitor is like this, and according to the state of the plasma generation of chamber 10 inside, the electric capacity of suitable regulating capacitor 85, can realize optimized energy loss minimizing work.

As shown in figure 19, in the situation that not possessing energy loss minimizing structure of the present invention (A curve), the wall of chamber 10 and corner portion side current potential are almost close to zero, but, as the present invention is provided with in the situation of lining guard board 81 and capacitor 85 (B curve), the current potential of the corner portion side of chamber 10 is more much larger than zero.

Therefore, the present invention, as shown in the B curve of Figure 19, can make the potential difference of chamber 10 inside minimize, thereby in chamber, produces plasma more uniformly.Particularly, the K part as the B curve chart of Figure 19, can reduce the energy loss in chamber wall, and by this energy all for generation of plasma, thereby can improve the efficiency of precipitation equipment or Etaching device.

And the present invention as above is applicable to all substrate board treatments that utilize plasma.For example, can be used in substrate board treatment (Dry etcher), chemical vapor deposition unit (ChemicalVapor Deposition) etc.

As mentioned above, the technological thought illustrating in the embodiment of the present invention can separate independent enforcement, also can combine enforcement.And the present invention is illustrated by the embodiment recording on accompanying drawing and summary of the invention, but this is example, and person skilled in the art of the present invention can carry out various deformation and implement other impartial embodiment.Therefore, technical protection scope of the present invention should define with claim scope.

Claims (3)

1. a gas supply structure for substrate board treatment, is characterized in that, comprising:

Guiding carrier, possesses the gabarit frame of the external profile surface that forms quadrangle framework and is arranged on the inside of described gabarit frame and separates center window and the separation frame of the periphery window of this center window periphery;

Shower nozzle, configures with quadrangular ring-shaped structure in the bottom surface of described separation frame, to chamber interior spray technology gas,

On the separation frame of quadrangle shape that forms described center window, near tetragonal each corner portion, connect respectively gas introduction tube, can to described shower nozzle, supply with process gas by the internal flow path of separation frame,

Described shower nozzle is not only formed on the bottom surface of described separation frame, is also formed on the side of center window side.

2. the gas supply structure of substrate board treatment according to claim 1, is characterized in that,

The jet face of described shower nozzle forms with horizontal plane, and the gas ejection ports forming on this horizontal plane vertically forms.

3. the gas supply structure of substrate board treatment according to claim 1, is characterized in that,

The jet face of described shower nozzle is with Surface forming, and the gas ejection ports forming on this curved surface forms radial structure.