CN102140680A - Method for preparing gallium nitride single crystal - Google Patents
Method for preparing gallium nitride single crystal Download PDFInfo
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- CN102140680A CN102140680A CN2011101197066A CN201110119706A CN102140680A CN 102140680 A CN102140680 A CN 102140680A CN 2011101197066 A CN2011101197066 A CN 2011101197066A CN 201110119706 A CN201110119706 A CN 201110119706A CN 102140680 A CN102140680 A CN 102140680A
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Abstract
The embodiment of the invention discloses a method for preparing a gallium nitride single crystal, which comprises the following steps of: providing a substrate which is a single crystal aluminum nitride substrate or a single crystal gallium nitride substrate; and growing the gallium nitride single crystal on the substrate. The gallium nitride single crystal is formed by using the aluminum nitride single crystal or gallium nitride single crystal substrate as a crystal seed; and the aluminum nitride single crystal or gallium nitride single crystal substrate has similar or the same lattice constant and almost the same thermal expansion system, so the high-quality (low-stress and low-dislocation density) gallium nitride single crystal is formed, laser peeling or stress self-peeling is not needed, industrial mass production can be realized, and preparation cost is reduced.
Description
Technical field
The present invention relates to semiconductor fabrication, more particularly, relate to a kind of preparation method of gallium nitride single crystal.
Background technology
Third generation semiconductor material since the energy forbidden band generally greater than 3.0 ev, wide bandgap semiconductor is otherwise known as.Than traditional silica-based and GaAs based semiconductor material, wide bandgap semiconductor, for example silicon carbide (SiC), gan (GaN), aluminium nitride (AlN) and indium nitride (InN) etc., because its distinctive forbidden band scope, good light, electrical properties and excellent material property, can satisfy the job requirement of high-power, high temperature high frequency and high-speed semiconductor device, in the prospect that is widely used aspect automobile and aircraft industry, medical treatment, military affairs and the general lighting.
Gan is a kind of semiconductor material with wide forbidden band of excellence, be to make to launch the photodiode of blue green light and UV-light and the ideal material of laser apparatus, the dizzy detector of the sun, high-energy condensed state switch and rectifier and high-energy-density microwave transistor, to being the third generation semiconductor material of representative and the research and development of device with the gan, become a focus of semiconductor applications.
At present, mainly adopt the method for HVPE (Hydride vapor phase epitaxy, hydride vapour phase epitaxy method) to prepare the mono-crystal gallium nitride thick film.Normally, HVPE prepares mono-crystal gallium nitride to carry out in the hvpe reactor device, obtains gallium nitride single crystal and be deposited on substrate (or crystal seed) going up extension formation gallium nitride single crystal by feed growth material in reactor.At present, mainly be to utilize liquid gallium and hydrochloric acid reaction to generate gallium chloride, be transferred to substrate surface and ammonia gas react generation gan and be deposited on sapphire or the substrate surface of silicon carbide by carrier gas, extension forms gallium nitride single crystal.This method has that equipment is simple, cost is low and advantage such as fast growth, can prepare even, the large-sized mono-crystal gallium nitride thick film of thickness, as the substrate of further formation device architecture.
But the problem of preparation gallium nitride single crystal is in the above-mentioned HVPE method, because the substrate that is adopted is generally dissimilar materialss such as sapphire or silicon carbide, and there are lattice mismatch and coefficient of thermal expansion mismatch between the homepitaxy gallium nitride thick film of sapphire or silicon carbide substrates, when the extension gallium nitride thick film reaches tens or hundreds of micron even when level millimeter, substrate and gallium nitride thick film cracking can be caused because of growth stress and thermal stresses, thereby mono-crystal gallium nitride thick film can not be formed with thicker size.
Problem when growing at HVPE proposes two kinds of methods that form the self-supporting substrate at present in the industry and is used for the HVPE gallium nitride crystal growth:
(1) laser lift-off.After GaN HVPE grows on the foreign substrate, use scans whole crystal less than foreign substrate forbidden band energy and greater than the laser of epitaxial film materials GaN forbidden band energy at the foreign substrate face, make the GaN between crystal and the foreign substrate decompose the generation liquid and gas, thereby both strength of joint have been reduced, realize peeling off of GaN and foreign substrate, form the self-supporting substrate.
(2) weak interface layer stress is from peeling off method.Before the GaN layer growth, earlier make a weak bond layer, for example use the thin metal layer of nitrogenize or porous interfacial layer etc. as the weak bond layer, the processing of lowering the temperature then on the foreign substrate surface, realize peeling off of epitaxial film and foreign substrate by methods such as control rate of temperature fall, form the self-supporting substrate.
Although above-mentioned two kinds of technology have solved the crystal cleavage problem, the cost of self-supporting substrate is very high, and this is by its technical characterstic decision.At first, the laser beam sectional area that uses in the laser lift-off is less, and sweep time is longer, and output has bottleneck; Secondly, laser lift-off and stress are very low from the productive rate of peeling off method, can not be applied to large-scale industrial production, so cost of manufacture are very high, thereby can not be used for the production of high brightness high power LED.
In addition, the self-supporting substrate is not suitable for the required substrate of high-end device such as laser apparatus growth because parent material or foreign substrate still have highdensity dislocation in the middle of the self-supporting substrate.
In sum, some technological methods that adopt at present can only partly solve too high and because the crystal cleavage problem that thermal stresses causes of growth dislocation.But owing to can not solve growth stress, dislocation still is higher (dislocation was heavily stressed a kind of releasing pattern) simultaneously, can only adopt the method for the heterogeneous growth of monolithic.These methods that eliminate stress such as laser lift-off have challenge technically very much on the one hand, and the yield that obtains the big area wafer is very low, thereby causes the gan production cost too high; Even by obtained complete big area wafer as laser-stripping method, the stress of wafer inside still exists, thereby causes the warpage of wafer, has influenced next step epitaxy on the other hand.At last, density is up to 1E6cm
-2Dislocation still limited the GaN crystal and used as the homo-substrate of high-end device.
Summary of the invention
The embodiment of the invention provides a kind of preparation method of gallium nitride single crystal, can form high-quality gallium nitride single crystal with lower manufacturing cost.
For achieving the above object, the embodiment of the invention provides following technical scheme:
A kind of preparation method of gallium nitride single crystal comprises:
Substrate is provided, and described substrate is monocrystalline aluminium nitride substrate or mono-crystal gallium nitride substrate;
Growing gallium nitride single crystal on described substrate.
Alternatively, the preparation method of described mono-crystal gallium nitride substrate comprises: monocrystalline aluminium nitride substrate is provided, and growing gallium nitride single crystal on described substrate is to obtain the mono-crystal gallium nitride substrate.
Alternatively, the method for growing gallium nitride single crystal is: the method growing gallium nitride single crystal on described substrate that utilizes HVPE.
Alternatively, the dislocation desity of described monocrystalline aluminium nitride substrate is not more than 1E5cm
-2
Alternatively, the dislocation desity of described monocrystalline aluminium nitride substrate is not more than 1E3cm
-2
Alternatively, the method for described HVPE comprises: by carrier gas the gallium source is transferred to substrate surface, described gallium source generates gan with the nitrogenous source reaction, and described gan is grown in substrate surface, forms gallium nitride single crystal.
Alternatively, described gallium source obtains by gallium and hydrochloric acid reaction, and described nitrogenous source is NH
3
Alternatively, the temperature of described gan growth is 900-1200 ℃.
Alternatively, be mixed with impurity gas that comprises Siliciumatom or the impurity gas that comprises Sauerstoffatom in the described carrier gas, to obtain n type gallium nitride single crystal.
Alternatively, be mixed with the impurity gas that comprises the Fe atom in the described carrier gas or comprise the impurity gas of Zn atom, to obtain the gallium nitride single crystal of semi.
Alternatively, prepare described monocrystalline aluminium nitride by subliming method.
Alternatively, before growing gallium nitride single crystal, also comprise step: described substrate surface is carried out pre-treatment, to remove oxide on surface.
Compared with prior art, technique scheme has the following advantages:
The preparation method of the mono-crystal gallium nitride of the embodiment of the invention, utilize aluminum-nitride single crystal or gallium nitride single crystal substrate to be crystal seed, form gallium nitride single crystal, because comparing with gallium nitride single crystal, aluminum-nitride single crystal or gallium nitride single crystal substrate have close or identical lattice parameter, and thermal expansivity much at one, thereby the gallium nitride single crystal that can prepare high quality (low-stress, low-dislocation-density), need not to adopt laser lift-off or stress from peeling off, can realize large batch of industrial production, reduce cost of manufacture.
Description of drawings
Shown in accompanying drawing, above-mentioned and other purpose, feature and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing, focus on illustrating purport of the present invention by physical size equal proportion convergent-divergent.
Fig. 1 is the preparation method's of the embodiment of the invention one disclosed gallium nitride single crystal a schema;
Fig. 2 be in the embodiment of the invention in the HPVE reactor synoptic diagram of growing gallium nitride;
Fig. 3 is the preparation method's of the embodiment of the invention two disclosed gallium nitride single crystals a schema.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
A lot of details have been set forth in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here and implement, those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention is not subjected to the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with synoptic diagram, when the embodiment of the invention is described in detail in detail; for ease of explanation; the sectional view of expression device architecture can be disobeyed general ratio and be done local the amplification, and described synoptic diagram is example, and it should not limit the scope of protection of the invention at this.The three-dimensional space size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Just as described in the background section, normally adopt the dissimilar materials of sapphire or silicon carbide to form gallium nitride single crystal in the prior art, and there are lattice mismatch and coefficient of thermal expansion mismatch between the homepitaxy gallium nitride thick film of sapphire or silicon carbide substrates, when even the extension gallium nitride thick film reaches tens microns millimeter levels, substrate and gallium nitride thick film cracking can be caused because of growth stress and thermal stresses, thereby mono-crystal gallium nitride thick film can not be formed with thicker size.
And the problem when growing at HVPE proposes to form the method for self-supporting substrate by laser glass method or weak interface layer stress from strip, but exists cost high and be not easy the characteristics of industrialization.
Based on this, it is crystal seed that the present invention adopts monocrystalline aluminium nitride substrate, method by HPVE, growing gallium nitride single crystal on monocrystalline aluminium nitride substrate, directly form gallium nitride thick film, perhaps form the gallium nitride single crystal substrate, this gallium nitride single crystal substrate can be used as crystal seed, further come growing gallium nitride single crystal, thereby form the high-quality gallium nitride monocrystalline with lower manufacturing cost.
Below with reference to specific embodiment, preparation method of the present invention is described in detail.
Embodiment one
With reference to figure 1, Fig. 1 is the preparation method of gallium nitride single crystal in the present embodiment.
At first, at step S11, provide substrate, described substrate is a monocrystalline aluminium nitride substrate.
Described monocrystalline aluminium nitride substrate is the crystal seed of growing gallium nitride single crystal, and in order to improve the growth quality of gallium nitride single crystal, the monocrystalline aluminium nitride of selecting low dislocation is as crystal seed, and preferably, the dislocation desity of described monocrystalline aluminium nitride substrate is not more than 1E5cm
-2, more preferably, the dislocation desity of described monocrystalline aluminium nitride substrate is not more than 1E5cm
-2
Described monocrystalline aluminium nitride can be polar surface (for example C-face), semi-polarity face (for example M face) or other non-polar planes, simultaneously, can also 10 ° OFFCUT (off-axis cutting) be arranged maximum, with further raising growth quality.
The diameter dimension of the crystal seed of described monocrystalline aluminium nitride substrate can preferably, can more preferably, can pass through subliming method (PVT) preparation greater than 2 inches greater than 1 inch greater than 1 centimetre.
Then, at step S12, growing gallium nitride single crystal on described substrate.
Can utilize method growing gallium nitride single crystal on described substrate of HVPE.
With reference to figure 2, Fig. 2 be in the embodiment of the invention in the HPVE reactor synoptic diagram of growing gallium nitride single crystal.
Particularly, at first, monocrystalline aluminium nitride substrate 110 is put into HPVE reactor 100.
In embodiments of the present invention, before putting into monocrystalline aluminium nitride substrate 110, described monocrystalline aluminium nitride substrate 110 had carried out necessary pre-treatment, for example carried out cleaning, CMP polished finish or other necessary processing.
Preferably, after substrate 110 is put into reactor 100, can also carry out online surface treatment, remove aln surface, can utilize NH with the zone of oxidation that air contact back forms to substrate
3Or the HCl pyroprocessing is removed the zone of oxidation on the substrate.
Then, by carrier gas the gallium source is transferred to substrate 110 surfaces, described gallium source generates gan with the nitrogenous source reaction, and described gan is grown in substrate 110 surfaces, forms gallium nitride single crystal 120.
Described gallium source can be to react the gallium chloride that obtains by gallium and hydrochloric acid in reactive tank 110-1, and described nitrogenous source can be NH
3, being written in the reactor by pneumatic tube 110-2, described gallium chloride is loaded into substrate 110 surfaces by carrier gas, and described carrier gas is imported into by carrier gas pipe 110-3, and gallium chloride imports on the substrate 110 and same NH by carrier gas
3Gan is produced in reaction, gan is deposited on the substrate 110, thereby formation gallium nitride single crystal, described carrier gas can be nitrogen, hydrogen or rare gas element (for example argon gas etc.), in gan forms, can keep temperature-resistant in the reactor, and keep the dividing potential drop of each component constant, grow uniformly to guarantee gallium nitride single crystal, in growth, the polarity of gan and monocrystalline aluminium nitride is consistent, and preferably, temperature can be controlled at 900-1200 ℃, regulate the HCl flow simultaneously, make the speed of growth more than 30um/hr, can come the thickness of the gallium nitride single crystal of control growing according to concrete needs, the thickness of gallium nitride single crystal can be for greater than 400 μ m, more preferably, can also be for greater than 1mm, optimally, can also be for greater than 5mm.The method that forms gallium nitride single crystal herein only is example, can also adopt additive method to form.
In addition, all right mixing and doping gas in described carrier gas, impurity gas can be one or more, with the electricity or the optical property that obtain to wish in gallium nitride, described impurity gas can be for comprising the gas of Siliciumatom, for example SiH
4, SiH
3Cl, SiHCl
3Deng, obtaining n type gallium nitride single crystal, the density of current carrier can be for greater than 1E18cm in the n type gallium nitride single crystal
-3, be preferably more than 5E18cm
-3Described impurity gas can also be for comprising the gas of Sauerstoffatom, as O
2, H
2O etc., obtaining n type gallium nitride single crystal, the density of current carrier can be for greater than 1E18cm in the n type gallium nitride single crystal
-3, be preferably more than 5E18cm
-3Described impurity gas can also be for comprising the gas of iron (Fe) atom or zinc (Zn) atom, as Cp
2Fe, FeCl, FeCl
3, ZnCl
2Deng, obtaining the gallium nitride single crystal of semi, its resistivity can be for greater than 1E9 Ω cm under the normal temperature, preferably, and can be for greater than 1E12 Ω cm; When described impurity gas is the gas of metal chloride, as FeCl
3, ZnCl
2Deng, can onlinely in reactor obtain by HCl and metal (as Fe, Zn) reaction.Above impurity gas only is an example, and described impurity gas can also be other suitable gases.
Gallium nitride single crystal by the aforesaid method growth, owing to be to grow on heterogeneous monocrystalline aluminium nitride of the same clan, the gallium nitride that obtains has the characteristics of low-stress and infraversion malposition, therefore, the gallium nitride single crystal that obtains thus can be the substrate of HPVE growth or other growth methods directly as crystal seed; And, can there be the stress cracking that causes because of the increase of thickness in heterogeneous growth of the same clan, therefore gallium nitride single crystal can also be grown to the crystal bar of big thickness, such as the crystal bar that surpasses 400mm, after this crystal bar further cuts and grinds, as the substrate that carries out device fabrication, substrate of blue-ray LED, LD device etc. for example.
Embodiment two
With reference to figure 3, Fig. 3 is the preparation method of gallium nitride single crystal in the present embodiment.
At first, at step S21, provide substrate, described substrate is the mono-crystal gallium nitride substrate.
In the present embodiment, with the mono-crystal gallium nitride substrate is the crystal seed of growing gallium nitride single crystal, the crystal seed of described mono-crystal gallium nitride substrate can be by in the foregoing description one, by on the monocrystalline aluminium nitride substrate that provides, growing gallium nitride single crystal and the mono-crystal gallium nitride substrate that obtains, described method does not repeat them here with the detailed description among the embodiment one.The gallium nitride single crystal that in aforesaid method, obtains, its dislocation is lower, and its dislocation desity can reach and be not more than 1E5cm
-2, better, its dislocation desity can be not more than 1E3cm
-2, fine mono-crystal gallium nitride crystal seed can improve the quality of follow-up gan growth.
Then, at step S22, growing gallium nitride single crystal on described substrate.
Can utilize method growing gallium nitride single crystal on described substrate of HVPE.
With reference to figure 2, Fig. 2 be in the embodiment of the invention in the HPVE reactor synoptic diagram of growing gallium nitride single crystal.
Particularly, at first, mono-crystal gallium nitride substrate 110 is put into HPVE reactor 100.
In embodiments of the present invention, before putting into mono-crystal gallium nitride substrate 110, described mono-crystal gallium nitride substrate 110 had carried out necessary pre-treatment, for example carried out cleaning, CMP polished finish or other necessary processing.
Preferably, after substrate 110 is put into reactor 100, can also carry out online surface treatment, remove gallium nitride surface, can utilize NH with the zone of oxidation that air contact back forms to substrate
3Or the HCl pyroprocessing is removed the zone of oxidation on the substrate.
Then, by carrier gas the gallium source is transferred to substrate 110 surfaces, described gallium source generates gan with the nitrogenous source reaction, and described gan is grown in substrate 110 surfaces, forms gallium nitride single crystal 120.
Described gallium source can be to react the gallium chloride that obtains by gallium and hydrochloric acid in reactive tank 110-1, and described nitrogenous source can be NH
3, being written in the reactor by pneumatic tube 110-2, described gallium chloride is loaded into substrate 110 surfaces by carrier gas, and described carrier gas is imported into by carrier gas pipe 110-3, and gallium chloride imports on the substrate 110 and same NH by carrier gas
3Gan is produced in reaction, gan is deposited on the substrate 110, thereby formation gallium nitride single crystal, described carrier gas can be nitrogen, hydrogen or rare gas element (for example argon gas etc.), in gan forms, can keep temperature-resistant in the reactor, and keep the dividing potential drop of each component constant, grow uniformly to guarantee gallium nitride single crystal, in growth, the polarity of gan and mono-crystal gallium nitride crystal seed is consistent, and preferably, temperature can be controlled at 900-1200 ℃, regulate the HCl flow simultaneously, make the speed of growth more than 30um/hr, can come the thickness of the gallium nitride single crystal of control growing according to concrete needs, the thickness of gallium nitride single crystal can be for greater than 400 μ m, more preferably, can also be for greater than 1mm, optimally, can also be for greater than 5mm.The method that forms gallium nitride single crystal herein only is example, can also adopt additive method to form.
In addition, all right mixing and doping gas in described carrier gas, impurity gas can be one or more, with the electricity or the optical property that obtain to wish in gallium nitride, described impurity gas can be for comprising the gas of Siliciumatom, for example SiH
4, SiH
3Cl, SiHCl
3Deng, obtaining n type gallium nitride single crystal, the density of current carrier can be for greater than 1E18cm in the n type gallium nitride single crystal
-3, be preferably more than 5E18cm
-3Described impurity gas can also be for comprising the gas of Sauerstoffatom, as O
2, H
2O etc., obtaining n type gallium nitride single crystal, the density of current carrier can be for greater than 1E18cm in the n type gallium nitride single crystal
-3, be preferably more than 5E18cm
-3Described impurity gas can also be for comprising the gas of iron (Fe) atom or zinc (Zn) atom, as Cp
2Fe, FeCl, FeCl
3, ZnCl
2Deng, obtaining the gallium nitride single crystal of semi, its resistivity can be for greater than 1E9 Ω cm under the normal temperature, preferably, and can be for greater than 1E12 Ω cm; During the described gas that is doped to metal chloride, as FeCl
3, ZnCl
2Deng, can onlinely in reactor obtain by HCl and metal (as Fe, Zn) reaction.Above impurity gas only is an example, and described impurity gas can also be other suitable gases.
Gallium nitride single crystal by the aforesaid method growth, owing to be on the mono-crystal gallium nitride of homogeneity, to grow, the gallium nitride that obtains has the characteristics of low-stress and infraversion malposition, and, can not have the cracking that causes because of the increase of thickness, so gallium nitride single crystal can be grown to the crystal bar of big thickness, such as the crystal bar that surpasses 1 centimetre, after this crystal bar further cuts and grinds, as the substrate that carries out device fabrication, substrate of blue-ray LED, LD device etc. for example.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.
Though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention.Any those of ordinary skill in the art, do not breaking away under the technical solution of the present invention scope situation, all can utilize the method and the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention, all still belongs in the scope of technical solution of the present invention protection any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (12)
1. the preparation method of a gallium nitride single crystal is characterized in that, comprising:
Substrate is provided, and described substrate is monocrystalline aluminium nitride substrate or mono-crystal gallium nitride substrate;
Growing gallium nitride single crystal on described substrate.
2. method according to claim 1 is characterized in that, the preparation method of described mono-crystal gallium nitride substrate comprises: monocrystalline aluminium nitride substrate is provided, and growing gallium nitride single crystal on described substrate is to obtain the mono-crystal gallium nitride substrate.
3. method according to claim 1 and 2 is characterized in that, the method for growing gallium nitride single crystal is: the method growing gallium nitride single crystal on described substrate that utilizes HVPE.
4. method according to claim 1 and 2 is characterized in that, the dislocation desity of described monocrystalline aluminium nitride substrate is not more than 1E5cm
-2
5. method according to claim 1 and 2 is characterized in that, the dislocation desity of described monocrystalline aluminium nitride substrate is not more than 1E3cm
-2
6. method according to claim 3 is characterized in that, the method for described HVPE comprises:
By carrier gas the gallium source is transferred to substrate surface, described gallium source generates gan with the nitrogenous source reaction, and described gan is grown in substrate surface, forms gallium nitride single crystal.
7. method according to claim 6 is characterized in that, described gallium source obtains by gallium and hydrochloric acid reaction, and described nitrogenous source is NH
3
8. method according to claim 7 is characterized in that, the temperature of described gan growth is 900-1200 ℃.
9. according to each described method among the claim 6-8, it is characterized in that, be mixed with impurity gas that comprises Siliciumatom or the impurity gas that comprises Sauerstoffatom in the described carrier gas, to obtain n type gallium nitride single crystal.
10. according to each described method among the claim 6-8, it is characterized in that, be mixed with the impurity gas that comprises the Fe atom in the described carrier gas or comprise the impurity gas of Zn atom, to obtain the gallium nitride single crystal of semi.
11. method according to claim 1 and 2 is characterized in that, prepares described monocrystalline aluminium nitride by subliming method.
12. method according to claim 1 and 2 is characterized in that, before growing gallium nitride single crystal, also comprises step: described substrate surface is carried out pre-treatment, to remove oxide on surface.
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| CN105442045A (en) * | 2015-06-25 | 2016-03-30 | 苏州纳维科技有限公司 | Semi-insulating GaN single crystal with low impurity concentration and preparation method and application thereof |
| CN109097834A (en) * | 2018-09-03 | 2018-12-28 | 南京大学 | Porous network structure GaN single crystal film, preparation method and application |
| CN111243977A (en) * | 2018-11-28 | 2020-06-05 | 上海微电子装备（集团）股份有限公司 | Gallium nitride and sapphire substrate stripping device and method |
| CN113026107A (en) * | 2021-02-26 | 2021-06-25 | 无锡吴越半导体有限公司 | Apparatus for manufacturing GaN single crystal |
| CN113622030A (en) * | 2021-08-18 | 2021-11-09 | 福建北电新材料科技有限公司 | Method for preparing silicon carbide single crystal |
| CN114220740A (en) * | 2022-02-22 | 2022-03-22 | 苏州浪潮智能科技有限公司 | Stripping method for gallium nitride substrate |
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