CN102134484A - GaN@SiO2微米材料的制备方法 - Google Patents
GaN@SiO2微米材料的制备方法 Download PDFInfo
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- CN102134484A CN102134484A CN201010561669XA CN201010561669A CN102134484A CN 102134484 A CN102134484 A CN 102134484A CN 201010561669X A CN201010561669X A CN 201010561669XA CN 201010561669 A CN201010561669 A CN 201010561669A CN 102134484 A CN102134484 A CN 102134484A
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- 239000000463 material Substances 0.000 title claims abstract description 62
- 238000002360 preparation method Methods 0.000 title claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 10
- 229910052681 coesite Inorganic materials 0.000 title abstract 5
- 229910052906 cristobalite Inorganic materials 0.000 title abstract 5
- 229910052682 stishovite Inorganic materials 0.000 title abstract 5
- 229910052905 tridymite Inorganic materials 0.000 title abstract 5
- 238000000034 method Methods 0.000 claims abstract description 12
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 18
- 238000002156 mixing Methods 0.000 claims description 16
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 12
- 239000012153 distilled water Substances 0.000 claims description 12
- 239000000843 powder Substances 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 238000003756 stirring Methods 0.000 claims description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 4
- 238000013019 agitation Methods 0.000 claims description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 4
- 239000003153 chemical reaction reagent Substances 0.000 claims description 4
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 4
- 239000000725 suspension Substances 0.000 claims description 4
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims description 4
- 238000010792 warming Methods 0.000 claims description 4
- 238000001914 filtration Methods 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 239000011248 coating agent Substances 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 4
- 230000005669 field effect Effects 0.000 abstract description 3
- 230000007062 hydrolysis Effects 0.000 abstract description 3
- 238000006460 hydrolysis reaction Methods 0.000 abstract description 3
- 238000009776 industrial production Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910002601 GaN Inorganic materials 0.000 description 55
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 239000002070 nanowire Substances 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 2
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000018199 S phase Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000445 field-emission scanning electron microscopy Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229940044658 gallium nitrate Drugs 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
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- Luminescent Compositions (AREA)
Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN 201010561669 CN102134484B (zh) | 2010-11-22 | 2010-11-22 | GaN@SiO2微米材料的制备方法 |
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CN 201010561669 CN102134484B (zh) | 2010-11-22 | 2010-11-22 | GaN@SiO2微米材料的制备方法 |
Publications (2)
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CN102134484A true CN102134484A (zh) | 2011-07-27 |
CN102134484B CN102134484B (zh) | 2013-05-22 |
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CN 201010561669 Expired - Fee Related CN102134484B (zh) | 2010-11-22 | 2010-11-22 | GaN@SiO2微米材料的制备方法 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI501932B (zh) * | 2013-09-25 | 2015-10-01 | Taiwan Glass Industry Corp | Can strengthen the double silver low-emission coated glass |
CN109796040A (zh) * | 2019-03-26 | 2019-05-24 | 湖南科技大学 | 一种GaOOH,Zn2+一维纳米材料的制备方法 |
CN111071998A (zh) * | 2019-12-31 | 2020-04-28 | 三峡大学 | 一种GaN多孔微米方块/碳复合材料的制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020047058A1 (en) * | 2000-08-31 | 2002-04-25 | Frank Verhoff | Milled particles |
WO2007043496A1 (en) * | 2005-10-03 | 2007-04-19 | Kaneka Corporation | Transparent polymer nanocomposites containing nanoparticles and method of making same |
CN101212990A (zh) * | 2005-07-01 | 2008-07-02 | 金文申有限公司 | 包含网状复合材料的医疗器械 |
CN101870851A (zh) * | 2010-06-02 | 2010-10-27 | 浙江工业大学 | 化学机械抛光液和抛光方法 |
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2010
- 2010-11-22 CN CN 201010561669 patent/CN102134484B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020047058A1 (en) * | 2000-08-31 | 2002-04-25 | Frank Verhoff | Milled particles |
CN101212990A (zh) * | 2005-07-01 | 2008-07-02 | 金文申有限公司 | 包含网状复合材料的医疗器械 |
WO2007043496A1 (en) * | 2005-10-03 | 2007-04-19 | Kaneka Corporation | Transparent polymer nanocomposites containing nanoparticles and method of making same |
CN101870851A (zh) * | 2010-06-02 | 2010-10-27 | 浙江工业大学 | 化学机械抛光液和抛光方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI501932B (zh) * | 2013-09-25 | 2015-10-01 | Taiwan Glass Industry Corp | Can strengthen the double silver low-emission coated glass |
CN109796040A (zh) * | 2019-03-26 | 2019-05-24 | 湖南科技大学 | 一种GaOOH,Zn2+一维纳米材料的制备方法 |
CN109796040B (zh) * | 2019-03-26 | 2021-03-02 | 湖南科技大学 | 一种GaOOH,Zn2+一维纳米材料的制备方法 |
CN111071998A (zh) * | 2019-12-31 | 2020-04-28 | 三峡大学 | 一种GaN多孔微米方块/碳复合材料的制备方法 |
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CN102134484B (zh) | 2013-05-22 |
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Inventor after: Bao Keyan Inventor after: Mao Wutao Inventor after: Sun Hongxian Inventor after: Li Yuling Inventor after: Zhao Qiang Inventor before: Bao Keyan Inventor before: Sun Hongxian |
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