CN102131952B - 沉积材料的方法 - Google Patents

沉积材料的方法 Download PDF

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CN102131952B
CN102131952B CN2009801336214A CN200980133621A CN102131952B CN 102131952 B CN102131952 B CN 102131952B CN 2009801336214 A CN2009801336214 A CN 2009801336214A CN 200980133621 A CN200980133621 A CN 200980133621A CN 102131952 B CN102131952 B CN 102131952B
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J·A·扬森斯
G·范德艾克尔
J·M·德克斯
J·J·布鲁克玛特
P·特里勒
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks

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Abstract

本发明涉及一种沉积靶材料(3)至样品(2)的表面的方法，该方法包括以下步骤：通过用激光束或电子束(7)照射靶表面来生成靶材料粒子的羽焰(9)；放置样品(2)至羽焰附近，以使得靶材料粒子沉积到样品的表面上；绕着垂直于沉积粒子的样品表面的旋转轴线(1)旋转样品；沿着靶表面移动激光束，以使得羽焰相对于旋转轴线沿径向移动；以可变的频率来脉冲调制激光束。

Description

沉积材料的方法
技术领域
本发明涉及一种沉积靶材料至样品表面的方法，该方法包括以下步骤：
-通过用激光束或电子束照射靶表面来生成靶材料粒子的羽焰(plume)；
-放置样品至羽焰附近，以使得靶材料粒子沉积到样品表面。
背景技术
通过所谓的脉冲激光沉积(PLD)可将靶材料沉积至样品表面。这种PLD技术使人们能选择非常高质量的材料、用非常薄的涂层来涂覆物体。这种脉冲激光沉积技术通常应用于研究环境。
然而，最好能将FLD技术的优点应用于工业领域。然而困难在于FLO技术仅适合于小尺寸应用。通过当前的技术，典型的是在约10mm×10mm的表面上覆盖均质层。该面积受限于FLD技术产生的等离子羽焰。该羽焰仅在典型的10mm×10mm的小面积内保持均匀。
发明内容
本发明当前的一个目的就是解决上述问题。
该目的通过本发明所述的方法来实现，该方法的特征在于：
-绕着垂直于沉积粒子的样品表面的旋转轴线旋转样品；
-沿着靶表面移动激光束，以使得羽焰相对于旋转轴线沿径向移动；
-以可变的频率来脉冲调制激光束。
通过绕着旋转轴线旋转样品，可使羽焰在样品的环形区域上沉积材料。通过沿靶表面在径向方向上移动激光束，可覆盖圆盘形样品表面的整个表面。因此，虽然PLD的有效羽焰典型地仅为10mm×10mm，但是仍然可覆盖大得多的样品表面。
然而，为了维持靶材料均质沉积到样品上并且在整个基材表面维持均质脉冲速率以实现均质的薄膜性能，有必要进一步以可变的频率来脉冲调制激光束。例如，如果维持样品的恒定角速度，与远离旋转轴线的环形表面相比，靠近旋转中心的环形表面将需要较少的靶材料。通过变化脉冲激光束的频率，容易在样品的整个表面上提供靶材料粒子的均质分布。
根据本发明所述方法的一个实施例，样品表面为圆盘状，并且优选地，靶表面基本上平行于样品表面。
根据本发明所述方法的一个优选实施例，靶材料为棒，其可沿着纵轴旋转。当靶材料经激光束照射时，小部分的材料被烧蚀，这些粒子将形成羽焰。如果激光束仅照射靶的一小部分，材料被烧蚀的数量将很大，将干扰PLD工艺。尤其在采用本发明所述的PLD方法进行大面积的涂覆时，大量材料将被烧蚀，这将会影响到靶料进而影响工艺。现在通过提供可围绕其纵轴旋转的棒状靶材料，就可能转换材料被烧蚀的靶材料区域。通过结合激光束的移动与靶的旋转，就可能实现靶材料的均匀材料烧蚀。
根据本发明所述方法的另一个优选实施例，样品的角速度依赖于旋转轴线与靶表面上的激光束的接触区域之间的距离。
通过改变样品的角速度，提供了在样品上均质地沉积材料的又一控制参数。
根据本发明所述方法的又一实施例，激光束的脉冲频率依赖于旋转轴线与靶表面上的激光束的接触区域之间的距离。正如已经述及的，当具有恒定的角速度时，靠近样品中心沉积时的脉冲频率要比在样品外部边缘区域沉积时的频率要低。然而，如果角速度也是变化的，最优值也能容易地计算出。
优选地，激光束脉冲频率的范围为1Hz至500Hz。
附图说明
本发明的这些及其它的特征将结合附图来阐述。
图1示意性地示出了根据本发明所述的方法。
图2示出了示意性示出位置的样品的俯视图。
图3显示了本发明的第二实施例。
具体实施方式
图1示出了可旋转的样品夹持器1。在可旋转的样品夹持器1上面设置有样品2。该样品2通常是需涂覆的合适材料的薄圆盘。
在样品夹持器1和样品2的下面设置有靶材料3。该靶材料为棒状并具有两个轴颈4、5，靶材料3通过该轴颈4、5可沿着纵轴6旋转。
激光设备(未示出)发射的激光束7被引导到镜8上。镜8是可倾斜的。
激光束7经镜8反射，投射到靶材料3上以生成羽焰9。该羽焰9由被烧蚀的靶材料3构成。
通过使镜8倾斜，固定的激光束7可在靶材料3的表面上沿纵轴6的方向移动。结果羽焰9可沿着样品圆盘2的径向移动。
图2中示出了样品圆盘2和若干沉积物10。这些沉积物10源自羽焰9。通过使镜8倾斜而使得羽焰沿圆盘2的径向移动，其具有的结果示出于图2中。
现在，通过旋转样品圆盘，这些沉积物能散布到盘片2的整个表面。正如从图2中所清楚看到的，当角速度ω保持恒定，并且通过保持激光频率恒定使沉积速率恒定时，这将会导致材料在样品圆盘的中心11附近比边缘附近有更高的沉积。因此，作为本发明的结果，通过改变激光束的频率来改变沉积速率，以使得在样品圆盘的中心11附近沉积较少的材料而在边缘附近沉积较多的材料。通过至少变化脉冲频率，并且优选地还变化角速度，可获得尺寸远大于常规尺寸的均匀涂覆沉积区域10的样品表面。
图3示出本发明第二实施例的示意图。可旋转的样品夹持器20上设置有样品21。在该可旋转的样品夹持器上方设有可旋转的靶材料夹持器22。在该靶夹持器22上放置有靶23，在该实施例中靶23为圆盘状。
进一步地，图3示出了激光束或者电子束24，其被导向聚焦镜25，聚焦镜将激光束导到可平移的平面镜26上。该平面镜26将激光束导到靶材料23上，产生靶材料粒子的羽焰27，随后其将沉积到样品材料21上。
平面镜26被沿着导向装置28导向，以使得平面镜26可被平移。通过平移平面镜26，激光束24可在靶材料23的表面上移动，从而羽焰27可在样品材料21的表面上移动。

Claims (7)

1.一种沉积靶材料至样品的表面上的方法，所述方法包括以下步骤：
-通过用激光束或电子束照射靶表面以生成靶材料粒子的羽焰；
-放置所述样品至所述羽焰附近，以使得所述靶材料粒子沉积到所述样品的表面上；
其特征在于：
-绕着垂直于沉积粒子的所述样品的表面的旋转轴线旋转所述样品；
-沿着所述靶表面移动所述激光束或电子束，以使得所述羽焰相对于所述旋转轴线沿径向移动；
-以可变的频率来脉冲调制所述激光束或电子束。
2.如权利要求1所述的方法，其中所述样品的表面为圆盘状。
3.如权利要求1或2所述的方法，其中所述靶表面基本上平行于所述样品的表面。
4.如权利要求1或2所述的方法，其中靶材料为棒，该棒能围绕其纵轴旋转。
5.如权利要求1或2所述的方法，其中所述样品的角速度依赖于所述旋转轴线与所述靶表面上所述激光束或电子束的接触区域之间的距离。
6.如权利要求1或2所述的方法，其中所述激光束或电子束的脉冲频率依赖于所述旋转轴线与所述靶表面上所述激光束或电子束的接触区域之间的距离。
7.如权利要求1或2所述的方法，其中用于脉冲调制的所述频率在1Hz到500Hz范围内。
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CN102131952A (zh) 2011-07-20
US9074282B2 (en) 2015-07-07
EP2159300A1 (en) 2010-03-03
DK2159300T3 (da) 2012-02-27
ES2378906T3 (es) 2012-04-19
SI2159300T1 (sl) 2012-05-31
JP2012500901A (ja) 2012-01-12
KR101307592B1 (ko) 2013-09-12
WO2010023174A1 (en) 2010-03-04
US20110236601A1 (en) 2011-09-29
ATE537277T1 (de) 2011-12-15
PT2159300E (pt) 2012-03-08
KR20130054465A (ko) 2013-05-24
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