CN102097526B - 一种晶体硅rie制绒的表面损伤层清洗工艺 - Google Patents
一种晶体硅rie制绒的表面损伤层清洗工艺 Download PDFInfo
- Publication number
- CN102097526B CN102097526B CN2010102988879A CN201010298887A CN102097526B CN 102097526 B CN102097526 B CN 102097526B CN 2010102988879 A CN2010102988879 A CN 2010102988879A CN 201010298887 A CN201010298887 A CN 201010298887A CN 102097526 B CN102097526 B CN 102097526B
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- Prior art keywords
- cleaning
- damage
- damage layer
- etching
- deionized water
- Prior art date
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- 238000004140 cleaning Methods 0.000 title claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 15
- 239000010703 silicon Substances 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title abstract description 14
- 239000013078 crystal Substances 0.000 title abstract description 5
- 238000001020 plasma etching Methods 0.000 claims abstract description 18
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000008367 deionised water Substances 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 11
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 9
- 239000011259 mixed solution Substances 0.000 claims abstract description 8
- 229910001868 water Inorganic materials 0.000 claims abstract description 6
- 239000000243 solution Substances 0.000 claims abstract description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 9
- 235000008216 herbs Nutrition 0.000 claims description 8
- 210000002268 wool Anatomy 0.000 claims description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000000126 substance Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (1)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010102988879A CN102097526B (zh) | 2010-10-08 | 2010-10-08 | 一种晶体硅rie制绒的表面损伤层清洗工艺 |
PCT/CN2010/078390 WO2012045216A1 (zh) | 2010-10-08 | 2010-11-03 | 一种晶体硅rie制绒的表面损伤层清洗工艺 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010102988879A CN102097526B (zh) | 2010-10-08 | 2010-10-08 | 一种晶体硅rie制绒的表面损伤层清洗工艺 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102097526A CN102097526A (zh) | 2011-06-15 |
CN102097526B true CN102097526B (zh) | 2012-08-29 |
Family
ID=44130494
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010102988879A Active CN102097526B (zh) | 2010-10-08 | 2010-10-08 | 一种晶体硅rie制绒的表面损伤层清洗工艺 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN102097526B (zh) |
WO (1) | WO2012045216A1 (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102364697B (zh) * | 2011-06-30 | 2013-07-24 | 常州天合光能有限公司 | 一种去除rie制绒后晶体硅表面的微损伤层的方法 |
CN102703903A (zh) * | 2012-05-08 | 2012-10-03 | 常州天合光能有限公司 | 一种碱制绒工艺 |
CN102728573B (zh) * | 2012-06-19 | 2014-12-03 | 天威新能源控股有限公司 | 一种晶体硅rie制绒表面损伤层的清洗工艺 |
CN102716867B (zh) * | 2012-06-21 | 2015-01-14 | 苏州阿特斯阳光电力科技有限公司 | 一种用于太阳能电池的晶体硅片的清洗方法 |
CN103806108A (zh) * | 2012-11-08 | 2014-05-21 | 上海神舟新能源发展有限公司 | 一种改进型晶硅电池片的清洗工艺 |
CN104393094B (zh) * | 2014-09-26 | 2017-02-15 | 中国电子科技集团公司第四十八研究所 | 一种用于hit电池的n型硅片清洗制绒方法 |
CN104362221B (zh) * | 2014-11-27 | 2016-09-14 | 苏州阿特斯阳光电力科技有限公司 | 一种rie制绒的多晶硅太阳电池的制备方法 |
CN105655445B (zh) * | 2016-03-25 | 2017-04-12 | 中节能太阳能科技(镇江)有限公司 | 一种rie制绒硅片表面修饰清洗方法 |
CN106711248B (zh) * | 2016-12-03 | 2018-07-24 | 河北工业大学 | 一种降低铸锭多晶硅片表面反射率的方法 |
CN107059136A (zh) * | 2017-06-26 | 2017-08-18 | 张兆民 | 多晶硅片的制绒工艺 |
CN107623056A (zh) * | 2017-09-29 | 2018-01-23 | 常州大学 | 一种反应离子刻蚀方法形成的纳米绒面表面缺陷修复方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101087007A (zh) * | 2007-05-11 | 2007-12-12 | 上海明兴开城超音波科技有限公司 | 单晶硅太阳能电池化学蚀刻、清洗、干燥的方法和它的一体化处理机 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02100320A (ja) * | 1988-10-06 | 1990-04-12 | Fujitsu Ltd | シリコンウエハーの製造方法 |
JPH11312665A (ja) * | 1998-04-27 | 1999-11-09 | Kyocera Corp | 半導体基板の粗面化法 |
US7507670B2 (en) * | 2004-12-23 | 2009-03-24 | Lam Research Corporation | Silicon electrode assembly surface decontamination by acidic solution |
CN100428406C (zh) * | 2007-02-27 | 2008-10-22 | 江苏佳讯电子有限公司 | 半导体管芯总成晶粒表面的处理方法 |
US7578889B2 (en) * | 2007-03-30 | 2009-08-25 | Lam Research Corporation | Methodology for cleaning of surface metal contamination from electrode assemblies |
CN101789371B (zh) * | 2009-01-23 | 2011-10-05 | 中芯国际集成电路制造(上海)有限公司 | 半导体元器件的清洗方法 |
CN101707187B (zh) * | 2009-11-27 | 2012-02-01 | 上海新傲科技股份有限公司 | 一种带有绝缘埋层的晶圆的表面处理方法 |
-
2010
- 2010-10-08 CN CN2010102988879A patent/CN102097526B/zh active Active
- 2010-11-03 WO PCT/CN2010/078390 patent/WO2012045216A1/zh active Application Filing
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101087007A (zh) * | 2007-05-11 | 2007-12-12 | 上海明兴开城超音波科技有限公司 | 单晶硅太阳能电池化学蚀刻、清洗、干燥的方法和它的一体化处理机 |
Non-Patent Citations (1)
Title |
---|
JP特开平11-312665A 1999.11.09 |
Also Published As
Publication number | Publication date |
---|---|
CN102097526A (zh) | 2011-06-15 |
WO2012045216A1 (zh) | 2012-04-12 |
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CB03 | Change of inventor or designer information |
Inventor after: Sheng Jian Inventor after: Gao Jifan Inventor before: Sheng Jian |
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CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINASOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. |
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CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |