CN102097314A - Laser heat treatment device and method for accurately controlling cooling process - Google Patents
Laser heat treatment device and method for accurately controlling cooling process Download PDFInfo
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- CN102097314A CN102097314A CN 201010621832 CN201010621832A CN102097314A CN 102097314 A CN102097314 A CN 102097314A CN 201010621832 CN201010621832 CN 201010621832 CN 201010621832 A CN201010621832 A CN 201010621832A CN 102097314 A CN102097314 A CN 102097314A
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Abstract
The invention discloses a laser heat treatment device and method for accurately controlling a cooling process, belonging to the technical field of semiconductor manufacturing equipment. A cylinder cavity with a certain length is adopted, a temperature field which is gradually cooled is arranged in the cylinder cavity, a stable output laser performs scanning and heat treatment for the surface of a wafer, then the wafer passes through the temperature field at a certain speed, the wafer is gradually cooled in the controlled condition, so that the cooling process is accurately controlled in various laser heat treatment processes. By adopting the device and method specifically for designing and controlling the cooling process of the wafer, a good control effect on the laser heat treatment process can be achieved, the process quality is ensured and the stability and repeatability of the process are improved. Particularly, a slow cooling function which can not be achieved by the traditional treatment is provided, and the crystal lattice quality of materials can be improved.
Description
Technical field
The invention belongs to semiconductor-fabricating device and technical scope, particularly a kind of laser heat treatment equipment and method that cooling procedure is accurately controlled.
Background technology
Laser action is carried out processed in semiconductor crystal wafer to the surface of semiconductor crystal wafer, generally can be divided into two class effects.One class effect relates to the part of wafer surface carries a large amount of laser energies, causes fusing, the evaporation of material, as laser scribing, boring, cutting etc.; Another kind of energy density is less, is need all surface of wafer to be carried out for example laser annealing, the laser recrystallization of non-crystalline material etc.The LASER HEAT TREATMENT that the present invention is alleged refers to a next class.
In laser heat treatment process, in order to prevent heat accumulation, in sheet,, the surface cause surface topography to damage near forming bigger temperature gradient, also adopt the method for substrate assistant heating usually, make wafer itself be in the certain high temperature temperature, thereby reduce the influence of thermal stress.
For the LASER HEAT TREATMENT process, remove the laser irradiation wafer surface, cause outside the wafer temperature raises to some extent, must can comprise also that wafer is cooled to the process of room temperature gradually, such temperature-fall period, for the final annealing or the quality of crystallization again, particularly important.For instance, if adopt cooling mode, the defect damage of clean wafer surface so, can " being freezed " in position, the defective atom can't sufficient movement to the lattice position place, influence the final annealing or the processing quality of crystallization again.
From current laser heat treatment technology, a lot of patented technologies are all only emphasized the process of laser action in the intensification of wafer surface, do not relate to the problem that the wafer cooling procedure is controlled.The present invention is different with conventional art, process to the wafer cooling designs and controls specially, and such device and technical method is provided, and can play better control action to the LASER HEAT TREATMENT processing technology, ensure processing quality, and improve the stability and repeatability of technology.
Summary of the invention
The purpose of this invention is to provide a kind of laser heat treatment equipment and method that cooling procedure is accurately controlled, it is characterized in that, in laser heat treatment process, adopt the laser heat treatment equipment of integration simultaneously the cooling procedure of wafer accurately to be controlled; The laser heat treatment equipment of described integration both had been used for LASER HEAT TREATMENT, also was used for the cooling procedure of wafer is controlled, and promptly two kinds of technical processs all use same device to finish; The main body of this laser heat treatment equipment is a cylinder body cavity 7, in the outer wall upper disc of cylinder body cavity 7 around heating furnace silk 6, lower disc is around coolant pipe 11, like this under the acting in conjunction of heating furnace silk and coolant pipe, can be in the inner temperature field of successively decreasing from top to bottom that forms of cylindrical cavity, temperature value is in room temperature to 500 ℃ scope.
End face is to the transparent window 4 of laser beam on cylinder body cavity 7, adopts the mode of laser beam 1 scanning, carries out the LASER HEAT TREATMENT of the whole surface area of disk under the motionless situation of wafer;
Outward extending wafer inlet 2 is set in the side on cylinder body cavity top, and the wafer that is equipped with is sent into cylinder body cavity manipulator 3; After the LASER HEAT TREATMENT process finished, the push rod 9 in the cylindrical chamber rose, take in the sheet holder 5 that the wafer wafer is placed on the push rod top from manipulator 3, and with wafer downwards by gradually cold temperature place.
In the bottom of cylindrical chamber, the side is provided with outward extending wafer outlet 8, when push rod 9 is reduced to cylinder body cavity least significant end, takes out the wafer that has processed from here.
Described heating furnace silk and coolant pipe 11 be the temperature field of successively decreasing from top to bottom according to cylindrical cavity inside distribute respectively segmented disc around or density gradual change coiling.
A kind of laser heat treatment equipment and method that cooling procedure is accurately controlled is characterized in that concrete steps are as follows:
(1) opens laser, wait for that laser output scans wafer surface after stable; Simultaneously each group heating furnace silk 6 is applied electrical power, coolant pipe 11 logical cooling fluids are set up the stable gradual change temperature field of successively decreasing from top to bottom in cylindrical chamber 7;
(2) manipulator 3 is sent into cylinder body cavity 7 inner tops with wafer from wafer inlet 2, after treating the wafer temperature stabilization, wafer will be accepted laser beam 1 irradiation by transparency window 4, and laser beam carries out two-dimensional scan and moves, thereby all surfaces of wafer all can be handled by laser beam;
(3) after laser treatment finished, the endoceliac push rod 9 of cylinder rose, and takes over wafer from manipulator, manipulator 3 withdraws from, push rod 9 descends, and the gradually cooling temperature field that has set in by cavity under setting speed, makes the cooling procedure of wafer carry out under controlled state;
(4) be in the sheet holder 5 at push rod 9 tops when wafer, cooling the time, manipulator 3 is sent into next platelet disk, carries out laser irradiation heat treatment gradually;
(5) after the wafer cooling, push rod 9 moves to main body chamber bottom, at this moment gets the sheet manipulator, can export 8 by wafer and take out the wafer that has machined; Push rod 9 and sheet holder 5 can be used for the controlled cooling of subsequent wafer sheet again.
(6) the above-mentioned course of processing is carried out circularly, can finish the processing of wafer in batch concurrently.
Described in the course of processing is carried out circularly, if finishing cooling, preceding a slice to be later than the moment that back a slice is finished laser radiation, then manipulator 3 can be waited for before sending into back a slice wafer slightly; Otherwise, then be that push rod 9 is waited for slightly, treat that taking over wafer again after laser treatment is finished cools off, and is controlled by computer program.
Described wafer is when cooling off, and the process of wafer cooling is that the speed that moved up and down in the cylinder body cavity by push rod 9 and the setting in temperature field determine jointly.
The nitrogen that leads to 1-2L/min in the cylinder body cavity in the described course of processing is protected.
The invention has the beneficial effects as follows, only to rely on natural cooling different with conventional method, apparatus and method of the present invention can design and control the cooling procedure of wafer, for annealing or the such LASER HEAT TREATMENT process of crystallization again, better technological effect control can be provided, ensure processing quality better, improve the stability and repeatability of technology.Especially, utilize apparatus and method of the present invention, can set wafer and extremely slowly cool off, can't realize and this refrigerating mode is a conventional art.
Description of drawings
Fig. 1 is the schematic diagram of the laser heat treatment equipment of integration that the wafer cooling procedure is controlled.
Embodiment
The invention provides a kind of laser heat treatment equipment and method that cooling procedure is accurately controlled, concrete device signal as shown in Figure 1.
In Fig. 1, the cooling procedure of wafer is finished in cylinder body cavity 7, and cylinder body cavity 7 can adopt materials such as quartz or SiC to make, and is the cylinder tubulose, 50 centimetres to 2 meters of boiler tube total lengths.
Upper and lower end at cylinder body cavity 7 is provided with wafer import 2 and wafer outlet 8, and the formation wafer that stretches out separately enters, takes out the path of processing chamber.The structure at cylinder body cavity two ends comprises the turnover sheet path that extends outward, and can adopt cylinder body cavity 7 same materials to make, and also can use other materials instead.
Fig. 1 has illustrated to pass in and out the configuring condition of sheet path, also can adopt the form of other variations, and for example wafer enters from left, from right-hand taking-up, or the like.
Lateral wall at cylinder body cavity 7, electric furnace heating wire 6 and coolant pipe 11 around grouping, be the temperature field of successively decreasing from top to bottom according to cylindrical cavity inside distribute respectively segmented disc around or density gradual change coiling, in the cylinder body cavity, to form gradually cold from top to bottom temperature control field.
The upper surface 4 of cylinder body cavity, adopting for the heat treatment laser beam is that material transparent is made, quartz material is a kind of reasonable selection, all can see through at the laser beam of usefulness at present for the overwhelming majority.
To the laser beam 1 that wafer is heat-treated, can drive the catadioptric element of optics by mechanical device, form the scanning motion of two dimension.Here the mechanical device that is adopted is similar to and drives the mechanism that drawing pen moves in the plotter on paper, and what just specifically move here is laser beam.
Wafer is through after the LASER HEAT TREATMENT, and push rod 9 rises, and takes over wafer by sheet holder 5, and descends by the default temperature field of cooling gradually with setting speed, realizes the accurate control to the wafer cooling procedure.
The laser heat treatment method that the said cooling procedure of the present invention is controlled, concrete steps illustrate as follows:
(1) setting device enters operating state.Just open laser, wait for that laser output is stable, can scan wafer surface; Simultaneously each group heating furnace silk 6 is applied electrical power, pipeline 11 logical cooling fluids in bottom are set up stable gradual change temperature field in cylindrical chamber 7.
(2) manipulator 3 band wafers are sent into, enter into chamber 7 through path 2, after treating the wafer temperature stabilization, top at chamber, wafer will be accepted laser beam 1 irradiation by transparency window 4, laser beam can carry out two-dimensional scan and move, thereby all surfaces of wafer all can be handled by laser beam; In the course of processing, the nitrogen of logical 1-2L/min is protected in the cylinder body cavity.
(3) after laser treatment finished, push rod 9 rose, and takes over wafer from manipulator.Manipulator 3 withdraws from, and push rod 9 descends, and the gradually cooling temperature field that has set in by cavity under setting speed, makes the cooling procedure of wafer carry out under controlled state.
(4) be in the sheet holder 5 at push rod 9 tops when wafer, cooling the time, manipulator 3 can be sent into another platelet disk again, carries out laser irradiation heat treatment gradually.
(5) after the wafer cooling, push rod 9 moves to main body chamber bottom, at this moment gets the sheet manipulator, can take out the wafer that has machined by path 8.Push rod 9 and sheet holder 5 can be used for the controlled cooling of subsequent wafer sheet again.
(6) said process carries out circularly, by computer program control, can finish the processing of wafer in batch concurrently.In the course of processing, if finishing cooling, preceding a slice to be later than the moment that back a slice is finished laser radiation, then manipulator 3 can be waited for before sending into back a slice wafer slightly; Otherwise, then be that push rod 9 is waited for slightly, treat that taking over wafer again after laser treatment is finished cools off.
Claims (6)
1. the laser heat treatment equipment that cooling procedure is accurately controlled is characterized in that, in laser heat treatment process, adopts the laser heat treatment equipment of integration simultaneously the cooling procedure of wafer accurately to be controlled; The laser heat treatment equipment of described integration both had been used for LASER HEAT TREATMENT, also was used for the cooling procedure of wafer is controlled, and promptly two kinds of technical processs all use same device to finish; The main body of this laser heat treatment equipment is a cylinder body cavity (7), in the outer wall upper disc of cylinder body cavity (7) around heating furnace silk (6), lower disc is around coolant pipe (11), like this under the acting in conjunction of heating furnace silk and coolant pipe, can be in the inner temperature field of successively decreasing from top to bottom that forms of cylindrical cavity, temperature value is in room temperature to 500 ℃ scope.
Last end face at cylinder body cavity (7) is to the transparent window of laser beam (4), adopts the mode of laser beam (1) scanning, carries out the LASER HEAT TREATMENT of the whole surface area of disk under the motionless situation of wafer;
Outward extending wafer inlet (2) is set in the side on cylinder body cavity top, and the wafer that is equipped with is sent into cylinder body cavity manipulator (3); After the LASER HEAT TREATMENT process finishes, the push rod in the cylindrical chamber (9 rise, take in the sheet holder (5) that the wafer wafer is placed on the push rod top from manipulator (3), and with wafer downwards by gradually cold temperature place.
In the bottom of cylindrical chamber, the side is provided with outward extending wafer outlet (8), when push rod (9) is reduced to cylinder body cavity least significant end, takes out the wafer that has processed from here.
2. according to the described a kind of laser heat treatment equipment that cooling procedure is accurately controlled of claim 1, it is characterized in that, described heating furnace silk and coolant pipe (11) be the temperature field of successively decreasing from top to bottom according to cylindrical cavity inside distribute respectively segmented disc around or density gradual change coiling.
3. method that cooling procedure is accurately controlled is characterized in that concrete steps are as follows:
(1) opens laser, wait for that laser output scans wafer surface after stable; Simultaneously each group heating furnace silk (6) is applied electrical power, coolant pipe (11) leads to cooling fluid, sets up the stable gradual change temperature field of successively decreasing from top to bottom in cylindrical chamber (7);
(2) manipulator (3) is sent into cylinder body cavity (7) inner top with wafer from wafer inlet (2), after treating the wafer temperature stabilization, wafer will be accepted laser beam (1) irradiation by transparency window (4), laser beam carries out two-dimensional scan and moves, thereby all surfaces of wafer all can be handled by laser beam; The nitrogen of logical 1-2L/min is protected in the cylinder body cavity;
(3) after laser treatment finishes, the endoceliac push rod of cylinder (9) rises, from manipulator, take over wafer, manipulator (3) withdraws from, push rod (9) descends, and the gradually cooling temperature field that has set in by cavity under setting speed makes the cooling procedure of wafer carry out under controlled state;
(4) be in the sheet holder (5) at push rod (9) top when wafer, cooling the time, manipulator (3) is sent into next platelet disk, carries out laser irradiation heat treatment gradually;
(5) after the wafer cooling, push rod (9) moves to main body chamber bottom, at this moment gets the sheet manipulator, can export (8) by wafer and take out the wafer that has machined; Push rod (9) and sheet holder (5) can be used for the controlled cooling of subsequent wafer sheet again.
(6) the above-mentioned course of processing is carried out circularly, can finish the processing of wafer in batch concurrently.
4. according to the described a kind of method that cooling procedure is accurately controlled of claim 3, it is characterized in that, it is described in the course of processing is carried out circularly, if finishing cooling, preceding a slice to be later than the moment that back a slice is finished laser radiation, then manipulator (3) can be waited for before sending into back a slice wafer slightly; Otherwise, then be that push rod (9) is waited for slightly, treat that taking over wafer again after laser treatment is finished cools off, and is controlled by computer program.
5. according to the described a kind of method that cooling procedure is accurately controlled of claim 3, it is characterized in that, described wafer is when cooling off, and the process of wafer cooling is that the speed that moved up and down in the cylinder body cavity by push rod (9) and the setting in temperature field determine jointly.
6. according to the described a kind of method that cooling procedure is accurately controlled of claim 3, it is characterized in that the nitrogen that leads to 1-2L/min in the described course of processing in the cylinder body cavity is protected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010621832 CN102097314B (en) | 2010-12-27 | 2010-12-27 | Laser heat treatment device and method for accurately controlling cooling process |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010621832 CN102097314B (en) | 2010-12-27 | 2010-12-27 | Laser heat treatment device and method for accurately controlling cooling process |
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| Publication Number | Publication Date |
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| CN102097314A true CN102097314A (en) | 2011-06-15 |
| CN102097314B CN102097314B (en) | 2012-12-26 |
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| CN 201010621832 Expired - Fee Related CN102097314B (en) | 2010-12-27 | 2010-12-27 | Laser heat treatment device and method for accurately controlling cooling process |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105552695A (en) * | 2015-12-21 | 2016-05-04 | 中国科学院长春光学精密机械与物理研究所 | Optical element water-cooling apparatus used in vacuum environment |
| CN108346558A (en) * | 2017-01-23 | 2018-07-31 | 松下知识产权经营株式会社 | The manufacturing method of base material heating device and method and electronic equipment |
| CN108746613A (en) * | 2018-05-31 | 2018-11-06 | 华中科技大学 | A kind of online heat treatment system of selective laser fusing |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11240800A (en) * | 1998-02-27 | 1999-09-07 | Nikon Corp | Heat-treating apparatus for fluorite single crystal and heat treatment |
| CN1448733A (en) * | 2003-04-11 | 2003-10-15 | 中国科学院上海光学精密机械研究所 | Process for the manufacture of precious metal nanometer micro-structure grating |
| US20040065170A1 (en) * | 2002-10-07 | 2004-04-08 | L. W. Wu | Method for producing nano-structured materials |
| US20040253839A1 (en) * | 2003-06-11 | 2004-12-16 | Tokyo Electron Limited | Semiconductor manufacturing apparatus and heat treatment method |
-
2010
- 2010-12-27 CN CN 201010621832 patent/CN102097314B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11240800A (en) * | 1998-02-27 | 1999-09-07 | Nikon Corp | Heat-treating apparatus for fluorite single crystal and heat treatment |
| US20040065170A1 (en) * | 2002-10-07 | 2004-04-08 | L. W. Wu | Method for producing nano-structured materials |
| CN1448733A (en) * | 2003-04-11 | 2003-10-15 | 中国科学院上海光学精密机械研究所 | Process for the manufacture of precious metal nanometer micro-structure grating |
| US20040253839A1 (en) * | 2003-06-11 | 2004-12-16 | Tokyo Electron Limited | Semiconductor manufacturing apparatus and heat treatment method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105552695A (en) * | 2015-12-21 | 2016-05-04 | 中国科学院长春光学精密机械与物理研究所 | Optical element water-cooling apparatus used in vacuum environment |
| CN105552695B (en) * | 2015-12-21 | 2018-12-07 | 中国科学院长春光学精密机械与物理研究所 | A kind of optical element water cooling plant under vacuum environment |
| CN108346558A (en) * | 2017-01-23 | 2018-07-31 | 松下知识产权经营株式会社 | The manufacturing method of base material heating device and method and electronic equipment |
| CN108746613A (en) * | 2018-05-31 | 2018-11-06 | 华中科技大学 | A kind of online heat treatment system of selective laser fusing |
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| CN102097314B (en) | 2012-12-26 |
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