CN102095766B - Miniature integrated temperature control type CO2 gas sensor and manufacturing method thereof - Google Patents
Miniature integrated temperature control type CO2 gas sensor and manufacturing method thereof Download PDFInfo
- Publication number
- CN102095766B CN102095766B CN 201010570145 CN201010570145A CN102095766B CN 102095766 B CN102095766 B CN 102095766B CN 201010570145 CN201010570145 CN 201010570145 CN 201010570145 A CN201010570145 A CN 201010570145A CN 102095766 B CN102095766 B CN 102095766B
- Authority
- CN
- China
- Prior art keywords
- electrode
- solid electrolyte
- layer
- film
- temperature control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Measuring Oxygen Concentration In Cells (AREA)
Abstract
The invention discloses a miniature integrated temperature control type CO2 gas sensor and a manufacturing method thereof. The sensor comprises a miniature integrated temperature control type device and a high-temperature work film type solid electrolyte air-sensitive element and is characterized in that: the miniature integrated temperature control type device consists of a silicon substrate, a SiO2 layer, a Si3N4 layer, a Pt heater and a temperature measuring element which are processed by a micro electro mechanical system (MEMS) process; and on a miniature integrated temperature control structure, a film type solid electrolyte CO2 air-sensitive element is formed by a micromachining process deposition SiO2 layer, an Li3PO4 solid electrolyte film, a Pt metal electrode, a reaction electrode Li2CO3 and a reference electrode Li2TiO3/TiO2. A closed loop control system is formed by the feedback of the Pt heater and the temperature measuring element to make the temperature of the sensor reach the specified temperature required by working, keep the temperature constant and ensure the optimal performance of the CO2 gas sensor.
Description
Technical field
The present invention relates to a kind of miniature integrated Temperature Control Type solid electrolyte CO that has
2Gas sensor configuration and preparation method.
Background technology
Solid electrolyte is widely used in gas sensor because of its good ionic conduction characteristic, finds first PbF from Faraday in 1834
2The temperature variant rule of conductivity since, domestic and international many research groups have begun to be devoted to the research of this respect, solid-state electrolyte gas sensor has become one of important developing direction.Present CO
2Conventional solid-state electrolyte gas sensor has been obtained very great development, existing CO by traditional processing mode preparation on market
2Product sensor, these sensors have adopted traditional processing technology such as sintering, bonding etc. that solid electrolyte, electrode, well heater etc. are integrated, and this makes, and sensor exists that volume is large, power consumption is large, stability and the problem such as consistance is not good.In addition, the electric potential type CO of existing solid electrolyte preparation
2Sensor, its electrolyte all need at high temperature to work.As Dong-HyunKim, the people such as Ji-Young Yoon are with Li
3PO
4, Li
2CO
3, Al
2O
3Mixed sintering is to being applied to together CO
2Gas sensor, wherein contrast electrode is LiMn
2O
4, this gas sensor is in the time of 370 ℃, to CO
2Gas has response characteristic preferably, and is subjected to the interference of water vapor also very little.
As mentioned above, adopt the traditional handicraft made with attemperating unit solid electrolyte CO
2Gas sensor has the shortcomings such as volume is large, high material consumption, consistance is poor, power consumption is large, can overcome these shortcomings and adopt the MEMS technology to carry out microminiaturization, is the inexorable trend of solid-state electrolyte gas sensor development.Existing bibliographical information with the device of solid electrolyte sensor, heating and temperature control integration, designed a kind of miniature solid electrolyte sensor as J.F.Currie, its structure is Pt|Na
2CO
3, Ba
2CO
3, AgSO
4| Ag, form the Pt heating arrangement by stripping method, wet etching forms membrane structure, and the subject matter of this sensor is that selectivity is bad.The people such as Yeung Bang are developing a kind of miniature full film CO
2Gas sensor, this sensor shows tested electromotive force and gas concentration meets the Nernst equation in different hot environments.But device does not have integrated heating device and temperature measuring equipment.Due to the problem of the aspects such as match materials, the system integration, preparation technology, compensation method, there is no at present the also miniature integrated Temperature Control Type solid electrolyte CO of successful Application that can work alone
2Gas sensor.
Summary of the invention
Technical matters to be solved by this invention is to improve the miniature integrated Temperature Control Type CO of background technology
2The present situation of gas sensor provides a kind of miniature integrated Temperature Control Type CO based on the MEMS technology
2Gas sensor, this sensor have the miniature attemperating unit of heating, temperature measurement integrated, on attemperating unit, prepare film-type solid electrolyte CO by fine process
2Gas sensor makes its solid electrolyte film reach the required optimum temperature of work.
For reaching above purpose, the present invention takes following technical scheme to be achieved:
A kind of miniature integrated Temperature Control Type CO
2Gas sensor is characterized in that, and is (two-sided with SiO at silicon chip
2) on, double-sided deposition Si
3N
4Layer falls Si in the wherein one side of silicon chip by dry etching
3N
4Layer, then wet method etches the radiator window structure is at the Si of the another side of silicon chip
3N
4Adopt photoetching, stripping technology to process Pt heating electrode and Pt thermometric electrode on layer, then deposit SiO
2Layer covers Pt heating electrode and Pt thermometric electrode, and exposes patching panel; Then at SiO
2Deposition Li on layer
3PO
4Solid electrolyte film, and prepare thereon two Pt conductive films, prepare reaction electrode at last on a Pt conductive film, prepare contrast electrode on another Pt conductive film.
Connect respectively the control line of heating and thermometric during use on patching panel, reaction electrode and contrast electrode connect the sensor output lead.Control by temperature, make working sensor 480 ℃ of solid electrolyte optimum temperatures.
In such scheme, described Si
3N
4Layer is the film of 1 micron left and right.Pt heating electrode and Pt thermometric electrode are banded circuitous configuration, and thickness is the 90-110 nanometer.Described Li
3PO
4Solid electrolyte film thickness is the 500-1000 nanometer.Described Pt conductive film is two rectangular ring structures.Described reaction electrode is Li
2CO
3Electrode; Contrast electrode is Li
2TiO
3/ TiO
2Electrode.
Aforementioned miniature integrated Temperature Control Type CO
2The preparation method of gas sensor comprises the steps:
A. at silicon chip double-sided deposition one deck Si
3N
4Film falls Si in the wherein one side of silicon chip by dry etching
3N
4Layer, then wet method etches the radiator window structure;
B. utilize lithography stripping technique, at the Si of the another side of silicon chip
3N
4Process Pt heating electrode and Pt thermometric electrode on layer;
C. deposit SiO on Pt heating electrode and Pt thermometric electrode
2Layer, and deposit Li thereon
3PO
4Solid electrolyte film;
D. by being with figuratum mask plate to cover, at Li
3PO
4On solid electrolyte film, two Pt conductive films of sputter, then prepare reaction electrode on a Pt conductive film, prepares contrast electrode on another Pt conductive film.
Compared with prior art, the present invention has the following advantages:
1) adopt MEMS technique to realize the Miniature integrated attemperating unit, attemperating unit and gas detecting element are integrated, make that its volume reduces, power-dissipation-reduced, the response speed raising encapsulates easy.
2) adopt the MEMS technology by layer by layer deposition technique, that heating, dielectric layer, solid electrolyte material, electrode etc. are together integrated on silicon chip, rather than adopting traditional bonding, method such as be installed, sensor process is stable, good reproducibility, easily batch production, cost are low.
3) heating of integrated temperature control device and temperature element process at one time, and have simplified processing technology.
4) this gas sensor comprises Li
3PO
4Solid electrolyte film, Pt conductive film, reaction electrode Li
2CO
3With contrast electrode Li
2TiO
3/ TiO
2, owing to being operated in optimum temperature, make sensor under the prerequisite that keeps excellent sensitivity, have extraordinary selectivity and response characteristic.
Description of drawings
Fig. 1 is the miniature integrated Temperature Control Type solid electrolyte CO of the present invention
2The structural representation of gas sensor.
Fig. 2 is the plane figure structural drawing of Pt heating electrode and Pt thermometric electrode pattern in Fig. 1.
Fig. 3 is the plane figure structural drawing of contrast electrode and reaction electrode in Fig. 1.
In Fig. 1 to Fig. 3: 1, silicon chip is (two-sided with SiO
2); 2, Si
3N
4Layer; 3, solid electrolyte film; 4, Pt conductive film; 5, reaction electrode; 6, contrast electrode; 7, SiO
2Insulating protective layer; 8, radiator window; 9, Pt heating electrode; 10, Pt thermometric electrode; 11, patching panel.
Fig. 4 is in 420 ℃ to 480 ℃ scopes, Li
3PO
4Solid electrolyte film CO
2Corresponding curved line relation between gas sensitivity and heating-up temperature.This curve shows that temperature will be in obvious improve greater than sensitivity after 480 ℃.
Embodiment
As shown in Figure 1, a kind of based on the miniature integrated Temperature Control Type solid electrolyte CO of MEMS technology
2Gas sensor, (two-sided with SiO at silicon chip
2) 1 double-sided deposition Si
3N
4Layer 2 falls Si by dry etching
3N
4Layer, wet-etching technology process radiator window 8 structures, at the another side Si of silicon chip
3N
4Adopt lithography stripping processes Pt heating electrode 9 and thermometric electrode 10 on layer, then deposit SiO
2Insulating protective layer 7 covers Pt heating electrode and Pt thermometric electrode, and exposes patching panel 11, after this at SiO
2Deposit Li on layer 7
3PO
4Solid electrolyte film 3, and prepare thereon two Pt conductive films 4, prepare Li respectively on two conductive films at last
2CO
3Reaction electrode 5 and Li
2TiO
3/ TiO
2Contrast electrode 6.
As shown in Figure 2, Pt heating electrode and Pt thermometric electrode pattern be, comprises two banded roundabout membrane structures that independently have the micron order yardstick, and thickness is 100 interior rice left and right, and the two ends of each membrane structure have two independently patching panels 11.Connect respectively the control line of heating and thermometric on patching panel, reaction electrode and contrast electrode connect the sensor output lead.Pt thermometric electrode resistance changes and temperature is corresponding relation, becomes voltage signal by the resistance signal change-over circuit, and as feedback, the Access Control circuit is controlled the driving voltage that is applied on the Pt heating electrode.
Pt electrical resistance temperature variation coincidence formula
R
t＝R
0(1+At+Bt
2) (1)
In formula: A=3.90802 * 10
-3/ ℃; B=-5.80195 * 10
-7/ ℃; R
tAnd R
0Be respectively the resistance value of Pt when t ℃ and 0 ℃.
Input signal at Pt heating electrode two ends on-load voltage, realizes that the sensor solid electrolyte is operated in 480 ℃ of optimum temperatures by control circuit.Because target temperature is adjustable, also can make working sensor on needed certain temperature, so this integrating device also extend on other high-temperature solid electrolyte gas sensor
As shown in Figure 3, Li in figure
3PO
4Solid electrolyte film 3 is the film square structure, and thickness is 680 nanometers.Pt conductive film 4 is the rectangular ring membrane structure, is respectively the Li of the thick film firing of tens microns of thickness thereon
2CO
3Reaction electrode 5 and Li
2TiO
3/ TiO
2Contrast electrode 6.Change in voltage between reaction electrode and contrast electrode is in temperature one timing and tested CO
2Gas concentration is corresponding relation.At Li
2CO
3On reaction electrode 5, CO
2Chemical reaction below occuring:
Generate Li
+, e
-, by Pt and Li
3PO
4Conduction arrive contrast electrode 6.At Li
2TiO
3/ TiO
2On contrast electrode, react:
Form electric potential difference between reaction electrode and contrast electrode, this electric potential difference equation
E＝Eo-RT/nF Ln p(CO
2) (4)
Wherein, given gas concentration p (CO under the Eo standard conditions
2) time electromotive force;
R-gas law constant (8.314JK
-1Mol
-1);
T-temperature (K);
The electron number that obtains and lose in the n-electrode reaction;
F-Faraday constant (96485Cmol
-1).
By measuring electromotive force and heating-up temperature between reaction electrode and contrast electrode, according to formula (4), can read tested gas concentration.
With this structure sensor to CO
2The response characteristic of gas is example, and sensor is demarcated under 20 ℃ of room temperatures, and namely under temperature was the environment of 20 ℃, solid electrolyte was operated in 480 ℃, as test environment CO
2When concentration was 500ppm, the magnitude of voltage that records reacting gas concentration was 260mV, records E under standard conditions
0Be 253.25mV, can be got by equation (4):
E=253.25 * 10
-3-8.314 * 753/2 * 96485 * Ln (500 * 10
-6)=257.25 * 10
-3V and measured result are basically identical.
Fig. 1 to Fig. 3 is based on the miniature integrated Temperature Control Type solid electrolyte CO of MEMS technology
2Gas sensor mainly adopts following processing step to realize:
A. at silicon chip (double-sided belt SiO
2) 1 double-sided deposition one deck Si
3N
4Film 2, the wherein one side of silicon chip adopts dry etching to fall Si
3N
4Layer, then wet method etches radiator window 8;
B. utilize lithography stripping technique, at the Si of the another side of silicon chip
3N
4Process Pt heating electrode 9 and the Pt thermometric electrode 10 of miniature thin-film structure on layer;
C. at sputter SiO on Pt heating electrode and Pt thermometric electrode
2Insulating protective layer 7, and prepare Li by the thermal evaporation coating process thereon
3PO
4Solid electrolyte film 3;
D. by being with figuratum mask plate to cover, at Li
3PO
4Then two Pt conductive films 4 of sputter on solid electrolyte film adopt thick-film technique preparation feedback electrode 5 and contrast electrode 6 respectively on two conductive films.
The temperature control compensation methods of sensor of the present invention comprises the steps:
A, as Fig. 2, apply voltage at Pt heating electrode 9 two ends, detect the resistance variations of Pt thermometric electrode 10, this resistance variations is converted into voltage signal by signal processing circuit, then as feedback signal, and apply voltage ratio, form the closed loop thermal control system.
B. have definite relation due to Pt resistance variations and temperature variation, take specified temp as target, realize the constant of temperature element resistance change by control circuit.
C, as Fig. 3, electromotive force between detection reaction electrode 5 and contrast electrode 6 changes, the CO in the environment that obtains
2Gas concentration.
Claims (2)
1. miniature integrated Temperature Control Type CO
2Gas sensor is characterized in that, on silicon chip, and double-sided deposition Si
3N
4Layer falls Si in the wherein one side of silicon chip by dry etching
3N
4Layer, then wet method etches the radiator window structure is at the Si of the another side of silicon chip
3N
4Adopt photoetching, stripping technology to process Pt heating electrode and Pt thermometric electrode on layer, then deposit SiO
2Insulating protective layer covers Pt heating electrode and Pt thermometric electrode, and exposes patching panel; Then at SiO
2Deposit Li on insulating protective layer
3PO
4Solid electrolyte film, and prepare thereon two Pt conductive films, prepare reaction electrode at last on a Pt conductive film, prepare contrast electrode on another Pt conductive film; Wherein, Pt heating electrode and Pt thermometric electrode are banded circuitous configuration, and thickness is the 90-110 nanometer; Li
3PO
4Solid electrolyte film thickness is the 500-1000 nanometer; The Pt conductive film is two rectangular ring structures; Reaction electrode is Li
2CO
3Electrode; Contrast electrode is Li
2TiO
3/ TiO
2Electrode.
2. miniature integrated Temperature Control Type CO as claimed in claim 1
2The preparation method of gas sensor is characterized in that, comprises the steps:
A. at silicon chip double-sided deposition one deck Si
3N
4Film falls Si in the wherein one side of silicon chip by dry etching
3N
4Layer, then wet method etches the radiator window structure;
B. utilize lithography stripping technique, at the Si of the another side of silicon chip
3N
4Process Pt heating electrode and Pt thermometric electrode on layer;
C. deposit SiO on Pt heating electrode and Pt thermometric electrode
2Layer, and deposit Li thereon
3PO
4Solid electrolyte film;
D. by being with figuratum mask plate to cover, at Li
3PO
4On solid electrolyte film, two Pt conductive films of sputter, then prepare reaction electrode on a Pt conductive film, prepares contrast electrode on another Pt conductive film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010570145 CN102095766B (en) | 2010-12-02 | 2010-12-02 | Miniature integrated temperature control type CO2 gas sensor and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010570145 CN102095766B (en) | 2010-12-02 | 2010-12-02 | Miniature integrated temperature control type CO2 gas sensor and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102095766A CN102095766A (en) | 2011-06-15 |
| CN102095766B true CN102095766B (en) | 2013-05-22 |
Family
ID=44128946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010570145 Expired - Fee Related CN102095766B (en) | 2010-12-02 | 2010-12-02 | Miniature integrated temperature control type CO2 gas sensor and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102095766B (en) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103175866A (en) * | 2011-12-26 | 2013-06-26 | 中国第一汽车股份有限公司 | Integrated planar gas sensor substrate |
| CN102730621B (en) * | 2012-06-15 | 2015-05-27 | 西安交通大学 | Silicon-based micro-heating plate provided with embedded heating wire, and processing method thereof |
| CN102798651B (en) * | 2012-08-09 | 2014-11-05 | 西安交通大学 | Common reference electrode temperature controlled CO2-SOx integrated gas sensor and preparation method thereof |
| CN103545353B (en) * | 2013-10-18 | 2016-05-11 | 四川飞阳科技有限公司 | A kind of heated by electrodes utmost point and processing technology thereof |
| CN103675048B (en) * | 2013-11-18 | 2016-02-24 | 西安交通大学 | A kind of metal-oxide gas transducer based on MEMS and preparation technology |
| EP2765410B1 (en) * | 2014-06-06 | 2023-02-22 | Sensirion AG | Gas sensor package |
| CN104089981B (en) * | 2014-06-23 | 2016-08-03 | 西安交通大学 | Based on nano-TiO2The miniature oxygen sensor of thin film and preparation technology |
| CN104297303B (en) * | 2014-11-05 | 2017-04-05 | 中国科学院重庆绿色智能技术研究院 | Acetone gas sensor and preparation method thereof |
| CN104483367B (en) * | 2014-12-08 | 2017-02-22 | 西安交通大学 | Solid thin film electrolyte current mode SO2 gas sensor and preparation method thereof |
| CN104458828A (en) * | 2014-12-22 | 2015-03-25 | 中国科学院重庆绿色智能技术研究院 | Acetone gas sensory semiconductor sensor |
| CN105987935B (en) * | 2015-02-16 | 2019-08-23 | 郑州炜盛电子科技有限公司 | MEMS gas sensor and preparation method thereof |
| US10578572B2 (en) * | 2016-01-19 | 2020-03-03 | Invensense, Inc. | CMOS integrated microheater for a gas sensor device |
| CN107656562B (en) * | 2016-07-26 | 2020-06-30 | 中国航空工业集团公司西安飞行自动控制研究所 | Temperature control system for MEMS device |
| CN106324052B (en) * | 2016-08-19 | 2019-07-19 | 李宗珍 | A kind of test method of microorganism in detection compressed gas |
| CN106383161B (en) * | 2016-09-09 | 2019-02-05 | 西安交通大学 | Based on Li3PO4-Li4SiO4Potential type gas sensor of hybrid solid electrolyte and preparation method thereof |
| CN106770585B (en) * | 2016-12-16 | 2019-06-28 | 苏州钽氪电子科技有限公司 | A kind of processing method of MEMS solid electrolyte oxygen sensor |
| US10393718B2 (en) | 2016-12-29 | 2019-08-27 | Industrial Technology Research Institute | Micro-electromechanical apparatus for thermal energy control |
| TWI633046B (en) * | 2016-12-29 | 2018-08-21 | 財團法人工業技術研究院 | Micro-electromechanical apparatus for heating energy control |
| CN109425706A (en) * | 2017-08-31 | 2019-03-05 | 天源华威集团有限公司 | Carbon dioxide sensor |
| CN107827078B (en) * | 2017-09-20 | 2020-05-15 | 上海申矽凌微电子科技有限公司 | Method for manufacturing sensor and sensor manufactured by method |
| CN109580724A (en) * | 2017-09-29 | 2019-04-05 | 萧育仁 | Mini type gas sensor and its manufacturing method |
| CN108680703A (en) * | 2018-04-10 | 2018-10-19 | 杭州电子科技大学 | A kind of MEMS buffer structures for micro-gas sensors |
| CN108845004B (en) * | 2018-06-15 | 2020-10-13 | 浙江大学 | Photocurrent carbon dioxide sensor |
| CN111689459B (en) * | 2020-05-15 | 2022-07-12 | 西安交通大学 | Gas sensor chip structure based on calcium silicate substrate and preparation method |
| CN112834583A (en) * | 2021-01-06 | 2021-05-25 | 厦门大学 | Electrochemical spectroscopy in-situ pool with thin film optical window and application thereof |
| CN113866248B (en) * | 2021-12-03 | 2022-02-18 | 六创资源环境研究院(南京)有限公司 | Detection method of carbon dioxide concentration detection sensor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1112239A (en) * | 1993-12-04 | 1995-11-22 | 株式会社金星社 | Low power consumption type thin film gas sensor and fabrication method for the same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003222608A (en) * | 2002-01-30 | 2003-08-08 | Matsushita Electric Ind Co Ltd | Manufacturing method for gas sensor |
| KR100531376B1 (en) * | 2003-06-16 | 2005-11-28 | 엘지전자 주식회사 | Carbon dioxide gas sensor and fabrication method for the same |
| US8057653B2 (en) * | 2007-10-15 | 2011-11-15 | Ohio State Research Foundation | Carbon dioxide sensor |
-
2010
- 2010-12-02 CN CN 201010570145 patent/CN102095766B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1112239A (en) * | 1993-12-04 | 1995-11-22 | 株式会社金星社 | Low power consumption type thin film gas sensor and fabrication method for the same |
Non-Patent Citations (1)
| Title |
|---|
| JP特開2003-222608A 2003.08.08 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102095766A (en) | 2011-06-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102095766B (en) | Miniature integrated temperature control type CO2 gas sensor and manufacturing method thereof | |
| JP4576582B2 (en) | Thermoelectric gas sensor with microelements | |
| Kida et al. | NASICON thick film-based CO2 sensor prepared by a sol–gel method | |
| Guidi et al. | Thin-film gas sensor implemented on a low-power-consumption micromachined silicon structure | |
| CN102798651B (en) | Common reference electrode temperature controlled CO2-SOx integrated gas sensor and preparation method thereof | |
| CN107589155A (en) | A kind of capacitance type sensor and preparation method thereof | |
| WO2005088285A1 (en) | Micro thermoelectric type gas sensor | |
| CN104142359B (en) | A kind of MEMS gas sensor and processing method thereof | |
| Hsiao et al. | Printed micro-sensors for simultaneous temperature and humidity detection | |
| CN204129000U (en) | A kind of MEMS gas sensor | |
| Su et al. | A micromachined resistive-type humidity sensor with a composite material as sensitive film | |
| CN106383161B (en) | Based on Li3PO4-Li4SiO4Potential type gas sensor of hybrid solid electrolyte and preparation method thereof | |
| US5672258A (en) | Impedance type humidity sensor with proton-conducting electrolyte | |
| WO2018159899A1 (en) | Dual heater gas sensor module | |
| Prasad et al. | A low-power, micromachined, double spiral hotplate for MEMS gas sensors | |
| CN103196955B (en) | Silicon carbide nano paper sensor as well as production method and application thereof | |
| CN102358612A (en) | Silicon-based coplanar micro-gas sensor chip and its application in micro-gas sensor preparation | |
| CN104483367B (en) | Solid thin film electrolyte current mode SO2 gas sensor and preparation method thereof | |
| Cretin et al. | NASICON structure for alkaline ion recognition | |
| CN210136193U (en) | Gas sensor and sensor array | |
| CN101799333B (en) | Corrosion-resistant film for measuring temperature or electrically heating and crucible element thereof | |
| NL8101479A (en) | ELECTRICAL DEVICE AND METHOD FOR MANUFACTURING SUCH A DEVICE. | |
| JPS62261934A (en) | Temperature sensor electrochemically measuring temperature | |
| US5871633A (en) | Impedance type humidity sensor with protonconducting electrolyte and method of using same | |
| Liu et al. | A study on the novel gas-sensing solid solution material (Cd1− xAgx) 2Sb2O6. 8 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130522 Termination date: 20151202 |
|
| EXPY | Termination of patent right or utility model |