CN102088034A - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
- Publication number
- CN102088034A CN102088034A CN2010102655461A CN201010265546A CN102088034A CN 102088034 A CN102088034 A CN 102088034A CN 2010102655461 A CN2010102655461 A CN 2010102655461A CN 201010265546 A CN201010265546 A CN 201010265546A CN 102088034 A CN102088034 A CN 102088034A
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- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 238000009792 diffusion process Methods 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 230000005516 deep trap Effects 0.000 claims description 26
- 238000002955 isolation Methods 0.000 claims description 17
- 238000009825 accumulation Methods 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 15
- 239000012535 impurity Substances 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 10
- 230000035755 proliferation Effects 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 238000006386 neutralization reaction Methods 0.000 description 3
- 230000002146 bilateral effect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
- H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0120005 | 2009-12-04 | ||
KR1020090120005A KR101098447B1 (ko) | 2009-12-04 | 2009-12-04 | 반도체 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102088034A true CN102088034A (zh) | 2011-06-08 |
CN102088034B CN102088034B (zh) | 2015-01-21 |
Family
ID=44081191
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010265546.1A Active CN102088034B (zh) | 2009-12-04 | 2010-08-26 | 半导体装置 |
Country Status (3)
Country | Link |
---|---|
US (2) | US8076726B2 (zh) |
KR (1) | KR101098447B1 (zh) |
CN (1) | CN102088034B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104143570A (zh) * | 2013-05-07 | 2014-11-12 | 旺宏电子股份有限公司 | 具有低导通电阻的金属氧化物半导体装置及其制造方法 |
CN104167360A (zh) * | 2013-05-16 | 2014-11-26 | 无锡华润上华半导体有限公司 | 横向扩散金属氧化物半导体器件及其制造方法 |
CN104766861A (zh) * | 2014-01-06 | 2015-07-08 | 株式会社东芝 | 半导体装置及其制造方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2537934A3 (en) | 2006-05-15 | 2013-04-10 | Paratek Pharmaceuticals, Inc. | Methods of regulating expression of genes or of gene products using substituted tetracycline compounds |
US8436430B2 (en) * | 2011-04-08 | 2013-05-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Diodes with embedded dummy gate electrodes |
US8749223B2 (en) * | 2011-06-22 | 2014-06-10 | Nxp B.V. | Galvanic isolation device and method |
KR101883010B1 (ko) * | 2012-08-06 | 2018-07-30 | 매그나칩 반도체 유한회사 | 반도체 소자 및 그 소자의 제조 방법 |
CN110690210B (zh) * | 2018-07-06 | 2021-11-16 | 联华电子股份有限公司 | 栅极接地n型金属氧化物半导体晶体管 |
CN112825327A (zh) * | 2019-11-21 | 2021-05-21 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0682362A2 (en) * | 1994-05-13 | 1995-11-15 | Fuji Electric Co. Ltd. | Method of manufacturing semiconductor device including a DMOS transistor |
JP2001320047A (ja) * | 2000-03-03 | 2001-11-16 | Toshiba Corp | 半導体装置 |
CN1825551A (zh) * | 2005-02-23 | 2006-08-30 | 旺宏电子股份有限公司 | 横向双扩散金氧半导体元件及其制造方法 |
JP2009267211A (ja) * | 2008-04-28 | 2009-11-12 | Panasonic Corp | 半導体装置およびその製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5739061A (en) | 1993-10-26 | 1998-04-14 | Fuji Electric Co., Ltd. | Method of manufacturing a semiconductor device using gate side wall as mask for self-alignment |
JPH07176640A (ja) | 1993-10-26 | 1995-07-14 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
US6448625B1 (en) * | 2001-03-16 | 2002-09-10 | Semiconductor Components Industries Llc | High voltage metal oxide device with enhanced well region |
US7851314B2 (en) * | 2008-04-30 | 2010-12-14 | Alpha And Omega Semiconductor Incorporated | Short channel lateral MOSFET and method |
US8507988B2 (en) * | 2009-10-02 | 2013-08-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | High voltage devices, systems, and methods for forming the high voltage devices |
-
2009
- 2009-12-04 KR KR1020090120005A patent/KR101098447B1/ko active IP Right Grant
-
2010
- 2010-07-14 US US12/836,503 patent/US8076726B2/en active Active
- 2010-08-26 CN CN201010265546.1A patent/CN102088034B/zh active Active
-
2011
- 2011-11-07 US US13/290,535 patent/US8552497B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0682362A2 (en) * | 1994-05-13 | 1995-11-15 | Fuji Electric Co. Ltd. | Method of manufacturing semiconductor device including a DMOS transistor |
JP2001320047A (ja) * | 2000-03-03 | 2001-11-16 | Toshiba Corp | 半導体装置 |
CN1825551A (zh) * | 2005-02-23 | 2006-08-30 | 旺宏电子股份有限公司 | 横向双扩散金氧半导体元件及其制造方法 |
JP2009267211A (ja) * | 2008-04-28 | 2009-11-12 | Panasonic Corp | 半導体装置およびその製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104143570A (zh) * | 2013-05-07 | 2014-11-12 | 旺宏电子股份有限公司 | 具有低导通电阻的金属氧化物半导体装置及其制造方法 |
CN104143570B (zh) * | 2013-05-07 | 2017-05-03 | 旺宏电子股份有限公司 | 具有低导通电阻的金属氧化物半导体装置及其制造方法 |
CN104167360A (zh) * | 2013-05-16 | 2014-11-26 | 无锡华润上华半导体有限公司 | 横向扩散金属氧化物半导体器件及其制造方法 |
CN104167360B (zh) * | 2013-05-16 | 2017-05-31 | 无锡华润上华半导体有限公司 | 横向扩散金属氧化物半导体器件及其制造方法 |
US9768292B2 (en) | 2013-05-16 | 2017-09-19 | Csmc Technologies Fab1 Co., Ltd. | Laterally diffused metal oxide semiconductor device and manufacturing method therefor |
CN104766861A (zh) * | 2014-01-06 | 2015-07-08 | 株式会社东芝 | 半导体装置及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US8552497B2 (en) | 2013-10-08 |
US20110133279A1 (en) | 2011-06-09 |
KR101098447B1 (ko) | 2011-12-26 |
KR20110063067A (ko) | 2011-06-10 |
US20120049278A1 (en) | 2012-03-01 |
CN102088034B (zh) | 2015-01-21 |
US8076726B2 (en) | 2011-12-13 |
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Effective date of registration: 20201021 Address after: Han Guozhongqingbeidao Patentee after: Key Foundry Co.,Ltd. Address before: Cheongju Chungbuk Korea Patentee before: MagnaChip Semiconductor, Ltd. |
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Address after: Republic of Korea Patentee after: Aisi Kaifang Semiconductor Co.,Ltd. Country or region after: Republic of Korea Address before: Han Guozhongqingbeidao Patentee before: Key Foundry Co.,Ltd. Country or region before: Republic of Korea |