CN102087470A - Photomask and implementation method thereof - Google Patents
Photomask and implementation method thereof Download PDFInfo
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- CN102087470A CN102087470A CN 201110000632 CN201110000632A CN102087470A CN 102087470 A CN102087470 A CN 102087470A CN 201110000632 CN201110000632 CN 201110000632 CN 201110000632 A CN201110000632 A CN 201110000632A CN 102087470 A CN102087470 A CN 102087470A
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Abstract
The invention discloses a photomask of a step lithography machine and an implementation method thereof. Based on the work characteristics of the step lithography machine, a step superposition region (5) and a mark superposition region (2) in a BLOK region (0) of the photomask are subjected to protection treatment, and a registration mark (1) of the photomask is arranged in a narrow scribing line (3) without occupying the area of a main die (4). Therefore, the photomask can improve the chip utilization rate in comparison to the photomask in which the mark can be only arranged in a wide scribing line or at a position occupying the area of the main die.
Description
Technical field
The present invention is mainly concerned with the reticle of step-by-step movement litho machine, and its advantage is that mark is arranged in narrow scribe line, does not take person in charge's core area, improves the chip utilization factor.The present invention also comprises the implementation method of this reticle.
Background technology
The register mark of reticle (1) is the necessary condition that litho machine can be finished alignment, so all there is register mark (1) in every kind of reticle, register mark (1) has the requirement of certain size size, need take area of chip.Usually be in the layout of register mark (1) in the wide scribe line (3) or take the area of being responsible for core (4), can not use narrow scribe line simultaneously, not account for and be responsible for the core topological design, the utilization factor of chip is reduced.
Fig. 2 illustrates the register mark that normal light cuts blocks for printing and is in the layout of synoptic diagram in the wide scribe line, and wide scribe line refers to live width between 100um-200um, and wide scribe line area occupied reduces the utilization factor of chip; Reticle of the present invention, scribe line can be designed as between the 50um-80um, improve the chip utilization factor.
Fig. 3 illustrates the register mark layout that normal light cuts blocks for printing and takies the synoptic diagram of being responsible for core (4) area, area occupied=(reticle BLOK area * mark takies number/reticle BLOK tube core number), usually the area that takies reduces the utilization factor of chip between 0.5%-8%; Reticle of the present invention does not take and is responsible for the core position, improves the chip utilization factor.
Summary of the invention
The invention provides a kind of reticle and its implementation.
1, a kind of reticle of step-by-step movement litho machine and its implementation is characterized in that:
A, reticle register mark (1) are in the layout of in reticle BLOK district (0) scribe line (3), are positioned on the point of crossing of scribe line (3), do not take to be responsible for core (4) area, improve the chip utilization factor.
B, reticle register mark (1) are in the layout of the top in reticle BLOK district (0), and during the cloth array and the bottom mutual superposition in next reticle BLOK district (0), stack district (5) is counter to handle protection, does not influence and is responsible for core (4) figure.
C, reticle register mark (1) are in the layout of the top in reticle BLOK district (0); during the cloth array and the bottom mutual superposition of next reticle BLOK; the mark stack district (2) of reticle BLOK district (0) bottom is counter to handle protection, guarantees to be that alignment keeps complete register mark next time.
D, reticle BLOK district (0) cloth array process adopt cloth array ten thousand methods in overlapping stepping stack district (5).
2, a kind of reticle and its implementation that is applicable to the step-by-step movement litho machine as claimed in claim 1 is characterized in that: described reticle register mark (1) is in the layout of the narrow scribe line in top (3) zone of intersection in reticle BLOK district (0).
3, a kind of a kind of reticle and its implementation that is applicable to the step-by-step movement litho machine as claimed in claim 1, it is characterized in that: the stack district (5) at the top in described reticle BLOK district (0), overlay region, bottom, during for the cloth array and next reticle BLOK district (0).
4, a kind of a kind of reticle and its implementation that is applicable to the step-by-step movement litho machine as claimed in claim 1, it is characterized in that: the mark stack district, top (2) in described reticle BLOK district (0), overlay region, bottom, during for the cloth array and next reticle BLOK district (0).
5, a kind of reticle and its implementation that is applicable to the step-by-step movement litho machine as claimed in claim 1 is characterized in that: described reticle BLOK district (0) cloth array adopts overlapping stepping stack district (5) cloth array.
6, a kind of reticle and its implementation that is applicable to the step-by-step movement litho machine as claimed in claim 1 is characterized in that: every layer photoetching version BLOK district (0) all adopts increases identical stack district (5).
Description of drawings
Fig. 1 is a kind of reticle BLOK of the present invention district synoptic diagram;
Fig. 2 is the reticle synoptic diagram in register mark the is in the layout of wide scribe line;
Fig. 3 takies the reticle synoptic diagram of being responsible for core (4) area for the register mark layout;
Fig. 4 is second kind of reticle BLOK of the present invention district synoptic diagram.
Fig. 5 is the concrete case synoptic diagram of the invention process.
Fig. 6 is for adopting Fig. 5 case layout effect synoptic diagram.
Embodiment
Fig. 1 shows a kind of reticle BLOK of the present invention district (0), describes reticle of the present invention in detail below in conjunction with Fig. 1.
A kind of reticle comprises: the register mark (1) in reticle BLOK district (0) for the litho machine alignment provides the figure of identification signal, is in the layout of narrow scribe line (3) crossover location; Mark stack district (2) is positioned at bottom, reticle BLOK district mark superposed positions, and size is longer than mark, wideer than mark, but width can surpass scribe line (3) width, adopts the anti-protection of handling, and promptly mark stack district (2) uses opposite light transmission with register mark (1); Stack district (5) is the top in reticle BLOK district (0), and the zone of stack is formed on bottom, during the cloth array and next reticle BLOK district (0), and stack district (5) is light tight district.
Fig. 2 illustrates a kind of register mark and is in the layout of reticle synoptic diagram in the wide scribe line, and wide scribe line refers to live width between 100um-200um usually, and wide scribe line area occupied is big, makes the utilization factor of chip reduce this; Reticle of the present invention, scribe line can be designed as between the 50um-80um, improve the chip utilization factor.
Fig. 3 illustrates and a kind of the register mark layout is taken the area synoptic diagram of being responsible for core (4), area occupied=(reticle BLOK area * mark takies number/reticle BLOK tube core number), and the area that takies usually makes the utilization factor reduction of chip between 0.5%-8%; Reticle of the present invention, mark do not take is responsible for the core position, improves the chip utilization factor.
Fig. 4 illustrates second kind of reticle BLOK (0) synoptic diagram, and stack district (5) increase, and recruitment further reduces the undesired signal of overlay mark for having N* (person in charge's core wide+scribing live width).
Fig. 5 illustrates the concrete case synoptic diagram of the invention process, comprises UT1000 litho machine reticle, adopts reticle of the present invention and its implementation, through the reality measuring and calculating, improves the chip utilization factor, is 2mm*2mm in the die-size, promotes 3.08% chip utilization factor.
Fig. 6 illustrates the concrete case synoptic diagram of the invention process, comprises that the UT1000 litho machine adopts reticle of the present invention and its implementation, the back final effect figure that structures the formation, and the stack amount of structuring the formation is stack district size.
Set forth the present invention by the foregoing description, also can adopt other embodiment to realize the present invention simultaneously.The present invention is not limited to above-mentioned specific embodiment, so the present invention is limited by the claims scope.
Claims (6)
1. the reticle of a step-by-step movement litho machine and its implementation is characterized in that:
A, reticle register mark (1) are in the layout of in reticle BLOK district (0) scribe line (3), are positioned on the point of crossing of scribe line (3), do not take to be responsible for core (4) area, improve the chip utilization factor.
B, reticle register mark (1) are in the layout of the top in reticle BLOK district (0), and during the cloth array and the bottom mutual superposition in next reticle BLOK district (0), stack district (5) is counter to handle protection, does not influence and is responsible for core (4) figure.
C, reticle register mark (1) are in the layout of the top in reticle BLOK district (0); during the cloth array and the bottom mutual superposition of next reticle BLOK; the mark stack district (2) of reticle BLOK district (0) bottom is counter to handle protection, guarantees to be that alignment keeps complete register mark next time.
D, reticle BLOK district (0) cloth array process adopt the cloth array method in overlapping stepping stack district (5).
2. a kind of reticle and its implementation that is applicable to the step-by-step movement litho machine as claimed in claim 1 is characterized in that: described reticle register mark (1) is in the layout of the narrow scribe line in top (3) zone of intersection in reticle BLOK district (0).
3. a kind of a kind of reticle and its implementation that is applicable to the step-by-step movement litho machine as claimed in claim 1, it is characterized in that: the stack district (5) at the top in described reticle BLOK district (0), overlay region, bottom, during for the cloth array and next reticle BLOK district (0).
4. a kind of a kind of reticle and its implementation that is applicable to the step-by-step movement litho machine as claimed in claim 1, it is characterized in that: the mark stack district, top (2) in described reticle BLOK district (0), overlay region, bottom, during for the cloth array and next reticle BLOK district (0).
5. a kind of reticle and its implementation that is applicable to the step-by-step movement litho machine as claimed in claim 1 is characterized in that: described reticle BLOK district (0) cloth array adopts overlapping stepping stack district (5) cloth array.
6. a kind of reticle and its implementation that is applicable to the step-by-step movement litho machine as claimed in claim 1 is characterized in that: every layer photoetching version BLOK district (0) all adopts increases identical stack district (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110000632 CN102087470A (en) | 2011-01-04 | 2011-01-04 | Photomask and implementation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110000632 CN102087470A (en) | 2011-01-04 | 2011-01-04 | Photomask and implementation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102087470A true CN102087470A (en) | 2011-06-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110000632 Pending CN102087470A (en) | 2011-01-04 | 2011-01-04 | Photomask and implementation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108732861A (en) * | 2018-04-26 | 2018-11-02 | 上海华力集成电路制造有限公司 | A kind of integrated circuit research and development mask plate |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0513304A (en) * | 1991-07-08 | 1993-01-22 | Canon Inc | Projection aligner and method for manufacture of semiconductor device |
| JPH08248613A (en) * | 1995-03-10 | 1996-09-27 | Fuji Electric Co Ltd | Etching photographic mask and its using method |
| JP2001035776A (en) * | 1999-07-22 | 2001-02-09 | Seiko Epson Corp | Method for manufacturing semiconductor device, and reticle |
| CN201477362U (en) * | 2009-08-03 | 2010-05-19 | 南昌欣磊光电科技有限公司 | Photoetching plate used for manufacturing LED chips |
| CN201945799U (en) * | 2011-01-04 | 2011-08-24 | 黑龙江八达通用微电子有限公司 | Photomask |
-
2011
- 2011-01-04 CN CN 201110000632 patent/CN102087470A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0513304A (en) * | 1991-07-08 | 1993-01-22 | Canon Inc | Projection aligner and method for manufacture of semiconductor device |
| JPH08248613A (en) * | 1995-03-10 | 1996-09-27 | Fuji Electric Co Ltd | Etching photographic mask and its using method |
| JP2001035776A (en) * | 1999-07-22 | 2001-02-09 | Seiko Epson Corp | Method for manufacturing semiconductor device, and reticle |
| CN201477362U (en) * | 2009-08-03 | 2010-05-19 | 南昌欣磊光电科技有限公司 | Photoetching plate used for manufacturing LED chips |
| CN201945799U (en) * | 2011-01-04 | 2011-08-24 | 黑龙江八达通用微电子有限公司 | Photomask |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108732861A (en) * | 2018-04-26 | 2018-11-02 | 上海华力集成电路制造有限公司 | A kind of integrated circuit research and development mask plate |
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Application publication date: 20110608 |