CN102064151A - Lead frame for manufacturing discrete semiconductor and manufacturing method thereof - Google Patents
Lead frame for manufacturing discrete semiconductor and manufacturing method thereof Download PDFInfo
- Publication number
- CN102064151A CN102064151A CN2010105455575A CN201010545557A CN102064151A CN 102064151 A CN102064151 A CN 102064151A CN 2010105455575 A CN2010105455575 A CN 2010105455575A CN 201010545557 A CN201010545557 A CN 201010545557A CN 102064151 A CN102064151 A CN 102064151A
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- Prior art keywords
- groove
- lead frame
- tin
- discrete device
- slide glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
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- Lead Frames For Integrated Circuits (AREA)
Abstract
The invention discloses a lead frame for manufacturing a discrete semiconductor and a manufacturing method thereof. The lead frame comprises a slide part (1) and a plurality of pins (2), wherein, a groove (4) is arranged on the slide part (1), and a tin-lead foil (5) is embedded into the groove (4). The manufacturing method comprises the following steps of: (a) firstly making the slide part (1) and the plurality of the pins (2), and punching out the groove (4) on the slide part by a punching process; and (b) covering a tin-lead slice on the groove (4), and punching just above the groove (4) in alignment to the groove so that the tin-lead foil (5) is separated from the tin-lead slice and is embedded into the groove (4). In the invention, the whole tin-coating process is saved when in use, and the tin-lead foil can be melted and uniformly spread into the whole groove, thus improving the qualification rate of the finished product and the production efficiency of the discrete semiconductor.
Description
Technical field:
The present invention relates to the semiconductor element field, specifically is a kind of lead frame of making semi-conductor discrete device and preparation method thereof that is used to.
Background technology:
Lead frame is the basic element of character of making semi-conductor discrete device, is TO-3P as the industry universal models, TO-220, TO-251, the lead frame of TO-126.As shown in Figure 1, the lead frame of prior art comprises slide glass portion 1 ' and a plurality of pin twos ', described lead frame is an integral body, the lead frame of part model also includes heat radiation fixed part 3 ' (as: TO-220).The base material of lead frame is copper alloy, aluminium alloy or ferroalloy.In the product use, need in slide glass portion, chip be installed, generally in slide glass portion, add the plumbous molten material of liquid tin, industry is called a process of tin, in order to slide glass portion and chip attach.But in said process, the plumbous molten material of tin spreads in slide glass portion and is difficult to fully and covers load the needed area of chip, especially when having oxidation on metal surface thing or organic contaminant in the slide glass portion, the plumbous molten material of just easier generation tin is sprawled not open (can cause rosin joint) and is sprawled the situation of inhomogeneous (can cause the chip attach out-of-flatness), have influence on the strong bonded of lead frame and chip chamber, and finally influence the production efficiency and the qualification rate of discrete device.
Summary of the invention:
The technical problem to be solved in the present invention is that a kind of lead frame that can make lead frame and more firm being used to of chips incorporate make semi-conductor discrete device is provided.
Technical solution of the present invention is, the lead frame that is used to make semi-conductor discrete device of following structure is provided, and comprises slide glass portion and a plurality of pin, and described slide glass portion is provided with groove, is embedded in tin lead foil sheet at described groove.
Adopt after the above structure compared with prior art, the present invention has the following advantages: adopt structure of the present invention, in use saved the whole technology of some tin, tin lead foil sheet in its slide glass portion is heated and can melts in the process that chip is installed, and be evenly distributed in the groove, again chip is placed the groove top this moment, slide glass portion carries out good binding with regard to energy and chip, whole groove can be sprawled and be full of to the plumbous molten material of tin, and be evenly distributed, promote the qualification rate of finished product, improved the production efficiency of semi-conductor discrete device simultaneously.
As improvement, described tin lead foil sheet is identical with the groove size, like this, when chip is installed, both has been enough to and can also can overflowed from groove securely in conjunction with chip after the fusing of tin lead foil sheet.
As improvement, the bottom surface of described groove is provided with netted groove, because tin lead foil sheet generally embeds in the groove by Sheet Metal Forming Technology, after the bottom surface increases netted groove, can make tin lead foil sheet partly be squeezed into netted groove, make the two more strong bonded, prevent that tin lead foil sheet from coming off; In addition in the process that chip is installed, after the heating of the tin lead foil sheet in the groove, the plumbous molten material of tin can be covered with groove fast, equably by netted groove, and after connecting chip, the molten material of tin after the sclerosis embeds netted groove, and it is more firm to make that slide glass portion is connected with chip.
As improvement, the grid of described netted groove is a parallelogram, and the easier processing of the grid of this shape also makes things convenient for the plumbous molten material rapid diffusion of tin and is covered with whole groove.
As improvement, the upper surface of the tin lead foil sheet in the described embedding groove is higher than the surface of slide glass portion, like this, because when punching press, the strength that tin lead foil sheet is embedded the used punching press of groove is unsuitable excessive, otherwise can damage the back side of slide glass portion, this moment, the upper surface of tin lead foil sheet was general all a little more than the surface of slide glass portion.
As improvement, also be provided with the ring-type groove that is positioned at the groove outside in the described slide glass portion, like this, outside the groove that embeds tin lead foil sheet, be provided with the ring-type groove, can in punching press ring-type groove, produce extruding to groove and tin lead foil sheet, make groove and tin lead foil sheet indent, tin lead foil sheet is embedded in the groove firmly.
As improvement, described groove is square, and the ring-type groove also is square, because chip generally is square, after the plumbous molten material of tin is covered with square groove, can make slide glass portion and chips incorporate more full.
Another technical problem that the present invention will solve is that a kind of manufacture method that can make lead frame and more firm being used to of chips incorporate make the lead frame of semi-conductor discrete device is provided.
Another kind of technical solution of the present invention is, a kind of manufacture method that is used to make the lead frame of semi-conductor discrete device is provided, and described lead frame comprises slide glass portion and a plurality of pin, and described manufacture method may further comprise the steps:
(a) adopt Sheet Metal Forming Technology, in slide glass portion, stamp out a groove;
(b) with tin lead material sheet covers on groove, alignment cavities is carried out punching press directly over groove, tin lead foil sheet and tin lead material thin slice are separated and embed in the groove.
Adopt after above structure and the method compared with prior art, the present invention has the following advantages: adopt the inventive method, can produce lead frame and in use save the whole technology of some tin, tin lead foil sheet in its slide glass portion is heated and can melts in the process that chip is installed, and be evenly distributed in the groove, again chip is placed the groove top this moment, slide glass portion carries out good binding with regard to energy and chip, whole groove can be sprawled and be full of to the plumbous molten material of tin, and be evenly distributed, and improved the production efficiency of semi-conductor discrete device, promoted the qualification rate of finished product simultaneously, adopt Sheet Metal Forming Technology, production efficiency is higher, and tin lead foil sheet combines more firm with groove.
As improvement, in step (a) afterwards, increase one procedure, stamp out netted groove in the bottom surface of groove, after the bottom surface increases netted groove, can make tin lead foil sheet partly be squeezed into netted groove, make the two more strong bonded, prevent that tin lead foil sheet from coming off; In addition in the process that chip is installed, after the heating of the tin lead foil sheet in the groove, the plumbous molten material of tin can be covered with groove fast, equably by netted groove, and after connecting chip, the molten material of tin after the sclerosis embeds netted groove, and it is more firm to make that slide glass portion is connected with chip.
As improvement, step (b) afterwards, increase one procedure, in slide glass portion, the outside that embeds the groove of tin lead foil sheet stamps out the ring-type groove, described ring-type groove surrounds whole groove, like this, can produce extruding to groove and tin lead foil sheet in punching press ring-type groove, make groove and tin lead foil sheet indent, tin lead foil sheet is embedded in the groove firmly.
Description of drawings:
Fig. 1 is the structural representation of lead frame that is used to make semi-conductor discrete device of prior art.
Fig. 2 is the structural representation (being unkitted tin lead foil sheet) that is used to make the power lead framework of semi-conductor discrete device of the present invention.
Fig. 3 is an A-A profile among Fig. 2.
Fig. 4 is the structural representation (after loading onto tin lead foil sheet) that is used to make the power lead framework of semi-conductor discrete device of the present invention.
Fig. 5 is an A-A profile among Fig. 4.
Fig. 6 is the process chart of the manufacture method of the lead frame that is used to make semi-conductor discrete device of the present invention.
Fig. 7 is the enlarged drawing of B among Fig. 6.
Fig. 8 is the location diagram of drift, tin lead material thin slice and the lead frame body of punching press tin lead foil sheet.
Shown in the figure: 1 ', slide glass portion, 2 ', pin, 3 ', the heat radiation fixed part, 1, slide glass portion, 2, pin, 3, heat radiation fixed part, 4, groove, 5, tin lead foil sheet, 6, netted groove, 7, ring-type groove, 8, drift, 9, tin lead material thin slice, 10, the lead frame body.
Embodiment:
The invention will be further described below in conjunction with the drawings and specific embodiments:
As Fig. 2, shown in Figure 3, the lead frame that is used to make semi-conductor discrete device of the present invention comprises slide glass portion 1, a plurality of pin two and heat radiation fixed part 3.Above-mentioned for based on the prior art of TO-220 model, some models are the fixed parts 3 that do not dispel the heat in addition.
Described slide glass portion 1 is provided with groove 4, and described groove 4 is embedded in and the identical tin lead foil sheets 5 of groove 4 sizes, and described depth of groove is 0.05mm, the thickness 0.1mm of tin lead foil sheet 5.
The bottom surface of described groove 4 is provided with netted groove 6, and the cross section of described netted groove 6 is a V-type, has not only strengthened the adhesion of tin lead foil sheet 5 and groove 4, when chip is installed, after tin lead foil sheet 5 melted by heat, more can enter the netted groove 6 of V-type smoothly, also be convenient to diffuse to whole groove.
Also be provided with the ring-type groove 7 that is positioned at groove 4 outsides in the described slide glass portion 1, described ring-type groove 7 surrounds whole groove 4.
Described groove 4 is a square groove, and ring-type groove 7 also is square.
The grid of described netted groove 6 is a square, and square is a kind of of parallelogram.
The manufacture method that is used to make the lead frame of semi-conductor discrete device of the present invention, described lead frame comprises slide glass portion and a plurality of pin, described manufacture method may further comprise the steps:
(a) adopt Sheet Metal Forming Technology, in slide glass portion, stamp out a groove 4, in the course of processing, the general row of putting in order that adopts processes, be that a plurality of lead frame bodies are side-by-side, during punching press lead frame fixed, adopt then with lead frame one to one drift slide glass portion is carried out punching press; Described groove is a square groove;
(b) with tin lead material sheet covers on groove 4, directly over groove 4,, tin lead foil sheet identical with groove size 5 and tin lead material thin slice be separated and embed in the groove 4 punching press of tin lead material thin slice; Described tin lead material thin slice is the raw material of tin lead foil sheet, because the whole discharging of a plurality of lead frame bodies is put, certain interval is arranged each other, can be above the groove of whole row lead frame frame body with strip tin lead material sheet covers, then tin lead material thin slice is carried out punching press, tin lead foil sheet identical with groove size 5 and tin lead material thin slice are separated and embed in the groove 4; In order to make full use of tin lead material thin slice, after a punching press is finished, the lead frame that processes can be taken out, put into a unprocessed row lead frame frame then, afterwards, regulate the position of tin lead material thin slice, make the part that is not stamped cover the groove top, like this, fully effectively utilized tin lead material thin slice; The edge of the lower surface of the drift 8 that punching press tin lead foil sheet 5 is used is provided with lower convex ring, and in the process of punching press, effectively the periphery of punching press tin lead foil sheet sink its periphery and firmly embeds in the groove.
Step (a) can increase one procedure afterwards, stamps out netted groove 6 in the bottom surface of groove, and the grid of described netted groove 6 is a parallelogram.
Step (b) can increase one procedure afterwards, and in slide glass portion, the outside that embeds the groove of tin lead foil sheet stamps out the ring-type groove; When punching press ring-type groove, groove and tin lead foil sheet are produced extruding, make groove and tin lead foil sheet indent, tin lead foil sheet is embedded in the groove firmly.
Below only just preferred embodiment of the present invention be described, but can not be interpreted as it is restriction to claim.The present invention not only is confined to above embodiment, and its concrete structure and step allow variation, and in a word, all various variations of being done in the protection range of independent claims of the present invention are all in protection scope of the present invention.
Claims (10)
1. a lead frame that is used to make semi-conductor discrete device comprises slide glass portion (1) and a plurality of pin (2), and it is characterized in that: described slide glass portion (1) is provided with groove (4), is embedded in tin lead foil sheet (5) at described groove (4).
2. the lead frame that is used to make semi-conductor discrete device according to claim 1 is characterized in that: described tin lead foil sheet (5) is identical with groove (4) size.
3. the lead frame that is used to make semi-conductor discrete device according to claim 1 is characterized in that: the bottom surface of described groove (4) is provided with netted groove (6).
4. the lead frame that is used to make semi-conductor discrete device according to claim 3 is characterized in that: the grid of described netted groove (6) is a parallelogram.
5. the lead frame that is used to make semi-conductor discrete device according to claim 1 is characterized in that: the upper surface of the tin lead foil sheet (5) in the described embedding groove and the surface of slide glass portion (1) are positioned on the same horizontal plane.
6. the lead frame that is used to make semi-conductor discrete device according to claim 1 is characterized in that: also be provided with the ring-type groove (7) that is positioned at groove (4) outside in the described slide glass portion (1).
7. the lead frame that is used to make semi-conductor discrete device according to claim 6 is characterized in that: described groove (4) is for square, and described ring-type groove (7) also is square.
8. manufacture method that is used to make the lead frame of semi-conductor discrete device is produced slide glass portion (1) and a plurality of pin (2) of lead frame earlier, and it is characterized in that: described manufacture method is further comprising the steps of:
A, employing Sheet Metal Forming Technology stamp out a groove (4) in slide glass portion;
B, with tin lead material sheet covers on groove (4), alignment cavities is carried out punching press directly over groove (4), tin lead foil sheet (5) and tin lead material thin slice are separated and embed in the groove (4).
9. the manufacture method that is used to make the lead frame of semi-conductor discrete device according to claim 8, it is characterized in that: step (a) afterwards, can increase one procedure, stamp out netted groove (6) in the bottom surface of groove, the grid of described netted groove (6) is a parallelogram.
10. the manufacture method that is used to make the lead frame of semi-conductor discrete device according to claim 8, it is characterized in that: step (b) afterwards, can increase one procedure, in slide glass portion, the outside that embeds the groove (4) of tin lead foil sheet stamps out ring-type groove (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010545557.5A CN102064151B (en) | 2010-11-08 | 2010-11-08 | Lead frame for manufacturing discrete semiconductor and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010545557.5A CN102064151B (en) | 2010-11-08 | 2010-11-08 | Lead frame for manufacturing discrete semiconductor and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102064151A true CN102064151A (en) | 2011-05-18 |
| CN102064151B CN102064151B (en) | 2014-01-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010545557.5A Active CN102064151B (en) | 2010-11-08 | 2010-11-08 | Lead frame for manufacturing discrete semiconductor and manufacturing method thereof |
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| Country | Link |
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| CN (1) | CN102064151B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102956600A (en) * | 2012-11-20 | 2013-03-06 | 无锡市威海达机械制造有限公司 | Lead frame structure |
| CN102969297A (en) * | 2012-11-20 | 2013-03-13 | 无锡市威海达机械制造有限公司 | Pouring basin type lead frame structure |
| CN103943597A (en) * | 2014-03-28 | 2014-07-23 | 张轩 | Lead frame applicable to high-temperature electric equipment |
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| CN2052959U (en) * | 1989-08-12 | 1990-02-14 | 刘嘉锦 | Silicon rectifier for automobile ac generator |
| CN2893922Y (en) * | 2006-04-19 | 2007-04-25 | 宁波康强电子股份有限公司 | Improved large-power lead wire frame |
| CN2929961Y (en) * | 2006-04-15 | 2007-08-01 | 宁波康强电子股份有限公司 | Improved triode lead frame |
| CN201369329Y (en) * | 2009-03-19 | 2009-12-23 | 宁波华龙电子股份有限公司 | Heat-resistant moisture-proof high-power lead frame |
| CN201868419U (en) * | 2010-11-08 | 2011-06-15 | 宁波康强电子股份有限公司 | Lead frame for manufacture of semiconductor discrete devices |
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2010
- 2010-11-08 CN CN201010545557.5A patent/CN102064151B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2052959U (en) * | 1989-08-12 | 1990-02-14 | 刘嘉锦 | Silicon rectifier for automobile ac generator |
| CN2929961Y (en) * | 2006-04-15 | 2007-08-01 | 宁波康强电子股份有限公司 | Improved triode lead frame |
| CN2893922Y (en) * | 2006-04-19 | 2007-04-25 | 宁波康强电子股份有限公司 | Improved large-power lead wire frame |
| CN201369329Y (en) * | 2009-03-19 | 2009-12-23 | 宁波华龙电子股份有限公司 | Heat-resistant moisture-proof high-power lead frame |
| CN201868419U (en) * | 2010-11-08 | 2011-06-15 | 宁波康强电子股份有限公司 | Lead frame for manufacture of semiconductor discrete devices |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102956600A (en) * | 2012-11-20 | 2013-03-06 | 无锡市威海达机械制造有限公司 | Lead frame structure |
| CN102969297A (en) * | 2012-11-20 | 2013-03-13 | 无锡市威海达机械制造有限公司 | Pouring basin type lead frame structure |
| CN103943597A (en) * | 2014-03-28 | 2014-07-23 | 张轩 | Lead frame applicable to high-temperature electric equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102064151B (en) | 2014-01-22 |
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