CN102054821A - Packaging structure with internal shield and manufacturing method thereof - Google Patents
Packaging structure with internal shield and manufacturing method thereof Download PDFInfo
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- CN102054821A CN102054821A CN 200910211804 CN200910211804A CN102054821A CN 102054821 A CN102054821 A CN 102054821A CN 200910211804 CN200910211804 CN 200910211804 CN 200910211804 A CN200910211804 A CN 200910211804A CN 102054821 A CN102054821 A CN 102054821A
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- shield body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
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- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The invention relates to a packaging structure with an internal shield and a manufacturing method thereof. The packaging structure comprises a substrate, a plurality of electronic assemblies, a sealing colloid, an internal shield and a covering layer; the electronic assemblies are arranged on the substrate; the sealing colloid covering the electronic assemblies is arranged on one surface of the substrate and is provided with at least one groove; the groove passes through an upper surface and a lower surface of the sealing colloid and is arranged among the electronic assemblies, and a distance is reserved between one short edge of the groove and one side of the sealing colloid; the internal shield is arranged in the groove and electrically connected to the substrate; and the covering layer covers the sealing colloid and one side of the substrate and is electrically connected with the substrate and the internal shield. Therefore, the internal shield ensures low electromagnetic interference and high electromagnetic tolerance among the electronic assemblies.
Description
Technical field
The invention relates to a kind of encapsulating structure and manufacture method thereof, in detail, is encapsulating structure and the manufacture method thereof that has the inner shield body about a kind of.
Background technology
With reference to figure 1, show the generalized section of known package structure.This known package structure 1 has a substrate 11, several electronic building bricks 12, an adhesive body 13 and a shielding layer 14.These electronic building bricks 12 are positioned on this substrate 11.This adhesive body 13 coats surface 111 and these electronic building bricks 12 of this substrate.This shielding layer 14 covers a side 112 of this adhesive body 13 and this substrate 11, and is electrically connected to this substrate 11.
The shortcoming of this known package structure 1 is as follows.This substrate 11 and this shielding layer 14 define an accommodation space 15, these electronic building bricks 12 all are positioned at this accommodation space 15, each other without any shielding, so have high electromagnetic interference (Electromagnetic Interference between these electronic building bricks 12, EMI) and low electromagnetism tolerance (Electromagnetic Compatibility, EMC).
Therefore, be necessary to provide a kind of encapsulating structure and manufacture method thereof, to address the above problem with inner shield body.
Summary of the invention
The invention provides a kind of encapsulating structure with inner shield body.This encapsulating structure comprises a substrate, several electronic building bricks, an adhesive body, an inner shield body and a shielding layer.This substrate comprises a ground metal layer and at least one ground connection weld pad.This substrate has a first surface and a side.This ground metal layer is positioned at this substrate, and is revealed in the side of this substrate.This ground connection weld pad is positioned at this substrate, is revealed in the first surface of this substrate, and is electrically connected to this ground metal layer.These electronic building bricks are positioned at the first surface of this substrate.This adhesive body is positioned on the first surface of this substrate, and coats these electronic building bricks, and comprises at least one groove, a upper surface, a lower surface and a side.This groove runs through the upper surface and the lower surface of this adhesive body, and between these electronic building bricks, and this groove has a long limit and a minor face, has a spacing between the side of this minor face and this adhesive body.This inner shield body is positioned at this groove, and is electrically connected to this ground connection weld pad.This shielding layer covers the side of this adhesive body and this substrate, and electrically connects this ground metal layer and this inner shield body.
The invention provides a kind of encapsulating structure with inner shield body.This encapsulating structure comprises a substrate, several electronic building bricks, an adhesive body, an inner shield body and a shielding layer.This substrate comprises a ground metal layer and at least one ground connection weld pad.This substrate has a first surface and a side.This ground metal layer is positioned at this substrate, and is revealed in the side of this substrate.This ground connection weld pad is positioned at this substrate, is revealed in the first surface of this substrate, and is electrically connected to this ground metal layer.These electronic building bricks are positioned at the first surface of this substrate.This adhesive body is positioned on the first surface of this substrate, and coats these electronic building bricks, and comprises at least one groove, a upper surface, a lower surface and a side.This groove runs through the upper surface and the lower surface of this adhesive body, and between these electronic building bricks.This inner shield body is positioned at this groove, and is electrically connected to this ground connection weld pad.This shielding layer covers the side of this adhesive body and this substrate, and electrically connects this ground metal layer and this inner shield body, and wherein the ratio of the thickness of the thickness of this inner shield body and this shielding layer is greater than 25.
The present invention more provides a kind of manufacture method with encapsulating structure of inner shield body.This manufacture method may further comprise the steps: a substrate and several electronic building bricks are provided, this substrate comprises a ground metal layer and at least one ground connection weld pad, this substrate has a first surface and a side, this ground metal layer is positioned at this substrate, and be revealed in the side of this substrate, this ground connection weld pad is positioned at this substrate, is revealed in the first surface of this substrate, and be electrically connected to this ground metal layer, these electronic building bricks are positioned at the first surface of this substrate; Form an adhesive body on the first surface of this substrate, to coat these electronic building bricks, this adhesive body comprises a upper surface, a lower surface and a side; Remove this adhesive body of part, to form at least one groove, this groove runs through the upper surface and the lower surface of this adhesive body, and between these electronic building bricks; Fill up an inner shield body in this groove, this inner shield body is electrically connected to this ground connection weld pad; Cut this substrate and this adhesive body; And form a shielding layer, covering the side of this adhesive body and this substrate, and electrically connect this ground metal layer and this inner shield body.
By this, this inner shield body can make and have low electromagnetic interference and high electromagnetism tolerance between these electronic building bricks.Simultaneously, the electronic building brick of various functions can be integrated in the encapsulating structure of the present invention, with the composition package count of minimizing final system product, and shorten product sizes.
Description of drawings
Fig. 1 shows the generalized section of known package structure;
Fig. 2 to Figure 11 shows that the present invention has the schematic diagram of manufacture method of first embodiment of the encapsulating structure of inner shield body; And
Figure 12 to Figure 24 shows that the present invention has the schematic diagram of manufacture method of second embodiment of the encapsulating structure of inner shield body.
Embodiment
Referring to figs. 2 to Figure 11, show that the present invention has the schematic diagram of manufacture method of first embodiment of the encapsulating structure of inner shield body.With reference to figure 2, provide a substrate 21 and several electronic building bricks (Electrical Element) 22.This substrate 21 comprises grounded metal zone 215 and one welding resisting layer 213 on the ground metal layer 212, at least one ground connection weld pad 214.This substrate 21 has a first surface 2111 and a side 2112.This ground metal layer 212 is positioned at this substrate 21, and is revealed in the side 2112 of this substrate 21.This ground connection weld pad 214 is positioned at this substrate 21, is revealed in the first surface 2111 of this substrate 21, and is electrically connected to this ground metal layer 212.
Should go up grounded metal zone 215 and be positioned at this substrate 21, and be revealed in the first surface 2111 of this substrate 21.In the present embodiment, grounded metal zone 215 is electrically connected to this ground metal layer 212 on this.Yet in other was used, grounded metal zone 215 was positioned at this ground metal layer 212 on this.This welding resisting layer 213 is positioned at the first surface 2111 of this substrate 21, and has at least one opening 2131, appears part and should go up grounded metal zone 215, to form this ground connection weld pad 214.In the present embodiment, the width W of this ground connection weld pad 214
1Be 300 μ m.These electronic building bricks 22 are positioned at the first surface 2111 of this substrate 21.These electronic building bricks 22 are driving component or passive component, and in detail, these electronic building bricks 22 can be digital circuit, analog circuit or are formed at the driving component of the first surface 2111 of this substrate 21 with Copper Foil.
With reference to figure 3, form an adhesive body 23 on the first surface 2111 of this substrate 21, to coat these electronic building bricks 22, this adhesive body 23 comprises a upper surface 232, a lower surface 234 and a side 233.With reference to figure 4, remove this adhesive body 23 of part, to form at least one groove 231, this groove 231 runs through the upper surface 232 and the lower surface 234 of this adhesive body 23, and between these electronic building bricks 22.In the present embodiment, this groove 231 appears this ground connection weld pad 214 of part.The width W of this groove 231
2Width W less than this ground connection weld pad 214
1, preferably, the width W of this groove 231
2Be 50 μ m to 200 μ m, more preferably, the width W of this groove 231
2Be 100 μ m to 200 μ m.To Fig. 7, wherein, Fig. 5 is the vertical view of Fig. 4 with reference to figure 5, Fig. 6 is the stereogram of Fig. 4, and Fig. 7 is the partial enlarged drawing of Fig. 6, and the plan view shape of this groove 231 is a straight line, and this groove 231 has a long limit 2313 and a minor face 2312, and intersect on this minor face 2312 and this long limit 2313.The length of this minor face 2312 equals the width W of this groove 231
2, the length L on this long limit 2313
1Be slightly less than the length L of this substrate 21
2, and greater than the length of this minor face 2312.Have a spacing between the side 233 of this minor face 2312 and this adhesive body 23, that is this groove 231 does not run through the two side faces 233 of this adhesive body 23.In the present embodiment, utilize laser means to remove this adhesive body 23 of part, to form this groove 231, the section shape of this groove 231 is for trapezoidal, and the angle of the angle of an inclined-plane of this groove 231 and a vertical line (not shown) is 1.8 ° to 9 °.Yet in other embodiments, the plan view shape of this groove 231 can be crooked line segment, and non-rectilinear, as shown in Figure 8.
With reference to figure 9, fill up an inner shield body 24 in this groove 231, this inner shield body 24 is electrically connected to this ground connection weld pad 214.In the present embodiment, utilize wire mark mode (Screen Printing) method to form this inner shield body 24, this inner shield body 24 directly contacts this ground connection weld pad 214, and the material of this inner shield body 24 is electric conducting material, for example scolder (Solder) or conducting resinl (Conductive Epoxy).The width W of this inner shield body 24
2The width W that is equal to this groove 231
2, that is, the width W of this inner shield body 24
2Be at least 50 μ m.According to principle of electromagnetic shield-ing, the frequency low signal of healing, its wavelength are longer, then the required width W of this inner shield body 24
2Bigger.For example, frequency is the above signal of 1MHz, the width W of this inner shield body 24
2Should be at least 50 μ m.By this, in the present invention, this inner shield body 24 is at least 50 μ m, is the above signal of 1MHz and can be applicable to frequency.
With reference to Figure 10, cut this substrate 21 and this adhesive body 23 along at least one line of cut L.With reference to Figure 11, form a shielding layer (Conformal Shield) 25, covering the side 2112 of this adhesive body 23 and this substrate 21, and electrically connect this ground metal layer 212 and this inner shield body 24.Therefore, in the present invention, this shield 24 and this shielding layer 25 are not to electroplate simultaneously to form.In the present embodiment, utilize method for sputtering to form this shielding layer 25, the thickness of this shielding layer 25 is 1 μ m to 2 μ m, and the ratio of the thickness of the thickness of this inner shield body 24 and this shielding layer 25 is greater than 25, and the material of this shielding layer 25 is a nickel.Yet, in other is used, can utilize electro-plating method to form this shielding layer 25, the material of this shielding layer 25 can be copper, and more can utilize method for sputtering to form an anti oxidation layer (not shown), to cover this shielding layer 25.Preferably, the thickness of this anti oxidation layer (not shown) is 40nm, and its material is a stainless steel.By this, this anti oxidation layer (not shown) can be avoided this shielding layer 25 oxidations, and promotes the product yield.
By this, this inner shield body 24 can be isolated these electronic building bricks 22, so this shield 24 can make and have low electromagnetic interference between these electronic building bricks 22 (Electromagnetic Interference, EMI) and high electromagnetism tolerance (Electromagnetic Compatibility, EMC).Simultaneously, the electronic building brick 22 of various functions can be integrated in this encapsulating structure 2, with the composition package count of minimizing final system product, and shorten product sizes.
Again with reference to Figure 11, show that the present invention has the generalized section of first embodiment of the encapsulating structure of inner shield body.This encapsulating structure 2 with inner shield body comprises a substrate 21, several electronic building bricks 22, an adhesive body 23, an inner shield body 24 and a shielding layer 25.This substrate 21 comprises grounded metal zone 215 and one welding resisting layer 213 on the ground metal layer 212, at least one ground connection weld pad 214.This substrate 21 has a first surface 2111 and a side 2112.This ground metal layer 212 is positioned at this substrate 21, and is revealed in the side 2112 of this substrate 21.This ground connection weld pad 214 is positioned at this substrate 21, is revealed in the first surface 2111 of this substrate 21, and is electrically connected to this ground metal layer 212.
Should go up grounded metal zone 215 and be positioned at this substrate 21, and be revealed in the first surface 2111 of this substrate 21.In the present embodiment, grounded metal zone 215 is electrically connected to this ground metal layer 212 on this.Yet in other was used, grounded metal zone 215 was positioned at this ground metal layer 212 on this.This welding resisting layer 213 is positioned at the first surface 2111 of this substrate 21, and has at least one opening 2131, appears part and should go up grounded metal zone 215, to form this ground connection weld pad 214.In the present embodiment, the width W of this ground connection weld pad 214
1Be 300 μ m.
These electronic building bricks 22 are positioned at the first surface 2111 of this substrate 21.In the present embodiment, these electronic building bricks 22 are driving component or passive component, and in detail, these electronic building bricks 22 can be digital circuit, analog circuit or are formed at the driving component of the first surface 2111 of this substrate 21 with Copper Foil.This adhesive body 23 is positioned on the first surface 2111 of this substrate 21, and coats these electronic building bricks 22, and comprises at least one groove 231, a upper surface 232, a lower surface 234 and a side 233.This groove 231 runs through the upper surface 232 and the lower surface 234 of this adhesive body 23, between these electronic building bricks 22.In the present embodiment, this groove 231 has a long limit 2313 and a minor face 2312, has a spacing between the side 233 of this minor face 2312 and this adhesive body 23, and is extremely shown in Figure 7 as Fig. 5.
This inner shield body 24 is positioned at this groove 231, and is electrically connected to this ground connection weld pad 214.In the present embodiment, the material of this inner shield body 24 is an electric conducting material, for example scolder (Solder) or conducting resinl (Conductive Epoxy).The width W of this inner shield body 24
2Width W less than this ground connection weld pad 214
1, preferably, the width W of this inner shield body 24
2Be 50 μ m to 200 μ m, more preferably, the width W of this inner shield body 24
2Be 100 μ m to 200 μ m.
This shielding layer 25 covers the side 2112 of this adhesive body 23 and this substrate 21, and electrically connects this ground metal layer 212 and this inner shield body 24.In the present embodiment, the thickness of this shielding layer 25 is 1 μ m to 2 μ m, and the ratio of the thickness of the thickness of this inner shield body 24 and this shielding layer 25 is greater than 25, and the material of this shielding layer 25 is a nickel.Yet in other was used, the material of this shielding layer 25 can be copper, and this encapsulating structure 2 with inner shield body more can comprise an anti oxidation layer (not shown).This anti oxidation layer (not shown) covers this shielding layer 25.Preferably, the thickness of this anti oxidation layer (not shown) is 40nm, and its material is a stainless steel.
Referring to figs 12 to Figure 24, show that the present invention has the schematic diagram of manufacture method of second embodiment of the encapsulating structure of inner shield body.The manufacture method (Fig. 2 to Figure 11) of the manufacture method of the encapsulating structure with inner shield body of present embodiment and the encapsulating structure with inner shield body of first embodiment is roughly the same, and wherein identical assembly is given identical numbering.Present embodiment is different with first embodiment to be in when this substrate 21 and these electronic building bricks 22 are provided, and more forms at least one first scolder 26 on this ground connection weld pad 214.
With reference to Figure 12, provide this substrate 21.In the present embodiment, the ground connection weld pad 214 of this substrate 21 is the microscler block of a continuous uninterrupted, and its area is bigger and complete, as shown in figure 13.By this, follow-uply forming this first scolder 26 and this inner shield body 24 on this ground connection weld pad 214 time, its contact area is bigger, and then the effect of low electromagnetic interference is preferable.But, follow-uply forming this first scolder 26 on this ground connection weld pad 214 time, this first scolder 26 needs the area of coating too big, cause this first scolder 26 of reflow after, the variable thickness of its protuberance causes.Yet in other was used, the ground connection weld pad 214 of this substrate 21 can comprise several sections 2141, has a spacing between adjacent two sections 2141, as shown in figure 14.By this, the area of the section 2141 of this ground connection weld pad 214 is less, makes that the thickness of its protuberance is consistent behind formation and this first scolder 26 of reflow.
With reference to Figure 15, form this first scolder 26 on this ground connection weld pad 214, this first scolder 26 is electrically connected to this inner shield body 24.With reference to Figure 16, provide these electronic building bricks 22.These electronic building bricks 22 are driving component, chip for example, and it comprises at least one second scolder 27.Then, this first scolder 26 of reflow (Reflow) and this second scolder 27, the surface that makes this first scolder 26 is circular-arc, and utilizes this second scolder 27 that these electronic building bricks 22 are arranged on this substrate 21.Yet in other was used, these electronic building bricks 22 can be passive component, were forming this first scolder 26 on this ground connection weld pad 214 time, more form this second scolder 27 in this on the grounded metal zone 215.With reference to Figure 17, form this adhesive body 23.With reference to Figure 18, removing this adhesive body 23 of part, when forming at least one groove 231, this groove 231 appears this first scolder 26 of part.By this, when utilizing laser means to remove this adhesive body 23 of part, this first scolder 26 can be protected this ground connection weld pad 214, avoids this ground connection weld pad 214 to be subjected to the laser infringement.This groove 231 comprises several sections 2311, has a spacing between adjacent two sections 2311, and is extremely shown in Figure 21 as Figure 19.By this, the length and width of the section 2311 of this groove 231 are smaller deeply, make when forming this inner shield body 24, can fill up the section 2311 of this groove 231 easily, and promote the product yield.With reference to Figure 22, when forming an inner shield body 24, this inner shield body 24 is electrically connected to this ground connection weld pad 214 by this first scolder 26.With reference to Figure 23, cut this substrate 21 and this adhesive body 23 along this line of cut L.With reference to Figure 24, form this shielding layer 25.
Again with reference to Figure 24, show that the present invention has the generalized section of second embodiment of the encapsulating structure of inner shield body.The encapsulating structure with inner shield body 2 (Figure 11) of the encapsulating structure with inner shield body 3 of present embodiment and first embodiment is roughly the same, and wherein identical assembly is given identical numbering.Be in this encapsulating structure 3 with inner shield body different with first embodiment of present embodiment more comprises at least one first scolder 26.This first scolder 26 is positioned on this ground connection weld pad 214, is electrically connected to this inner shield body 24, and the surface of this first scolder 26 is circular-arc.In addition, this inner shield body 24 comprises several sections 241, has a spacing between adjacent two sections 241.
Only the foregoing description only is explanation principle of the present invention and effect thereof, but not in order to restriction the present invention.Therefore, practise the foregoing description being made amendment and changing and still do not take off spirit of the present invention in the personage of this technology.Interest field of the present invention should be listed as claims.
Claims (20)
1. encapsulating structure with inner shield body comprises:
One substrate has a first surface and a side, and comprises:
One ground metal layer is positioned at this substrate, and is revealed in the side of this substrate; And
At least one ground connection weld pad is positioned at this substrate, is revealed in the first surface of this substrate, and is electrically connected to this ground metal layer;
Several electronic building bricks are positioned at the first surface of this substrate;
One adhesive body, be positioned on the first surface of this substrate, and coat these electronic building bricks, this adhesive body comprises at least one groove, a upper surface, a lower surface and a side, this groove runs through the upper surface and the lower surface of this adhesive body, and between these electronic building bricks, and this groove has a long limit and a minor face, has a spacing between the side of this minor face and this adhesive body;
One inner shield body is positioned at this groove, and is electrically connected to this ground connection weld pad; And
One shielding layer covers the side of this adhesive body and this substrate, and electrically connects this ground metal layer and this inner shield body.
2. encapsulating structure as claimed in claim 1, wherein this substrate more comprises a grounded metal zone and a welding resisting layer on one, should go up the grounded metal zone and be positioned at this substrate, and be revealed in the first surface of this substrate, this welding resisting layer is positioned at the first surface of this substrate, and have at least one opening, appear part and should go up the grounded metal zone, to form this ground connection weld pad.
3. encapsulating structure as claimed in claim 1, wherein the long limit of this groove is straight line or crooked line segment.
4. encapsulating structure as claimed in claim 1, wherein the material of this inner shield body is scolder or conducting resinl.
5. encapsulating structure as claimed in claim 1 more comprises an anti oxidation layer, and this anti oxidation layer covers this shielding layer.
6. encapsulating structure with inner shield body comprises:
One substrate has a first surface and a side, and comprises:
One ground metal layer is positioned at this substrate, and is revealed in the side of this substrate; And
At least one ground connection weld pad is positioned at this substrate, is revealed in the first surface of this substrate, and is electrically connected to this ground metal layer;
Several electronic building bricks are positioned at the first surface of this substrate;
One adhesive body, be positioned on the first surface of this substrate, and coat these electronic building bricks, this adhesive body comprises at least one groove, a upper surface, a lower surface and a side, this groove runs through the upper surface and the lower surface of this adhesive body, and between these electronic building bricks;
One inner shield body is positioned at this groove, and is electrically connected to this ground connection weld pad; And
One shielding layer covers the side of this adhesive body and this substrate, and electrically connects this ground metal layer and this inner shield body, and wherein the ratio of the thickness of the thickness of this inner shield body and this shielding layer is greater than 25.
7. encapsulating structure as claimed in claim 6, wherein this substrate more comprises a grounded metal zone and a welding resisting layer on one, should go up the grounded metal zone and be positioned at this substrate, and be revealed in the first surface of this substrate, this welding resisting layer is positioned at the first surface of this substrate, and have at least one opening, appear part and should go up the grounded metal zone, to form this ground connection weld pad.
8. encapsulating structure as claimed in claim 6, wherein this inner shield body comprises several sections, has a spacing between adjacent two sections.
9. encapsulating structure as claimed in claim 6 more comprises at least one first scolder, is positioned on this ground connection weld pad, and is electrically connected to this inner shield body.
10. encapsulating structure as claimed in claim 9, wherein the surface of this first scolder is circular-arc.
11. the manufacture method with encapsulating structure of inner shield body comprises:
One substrate and several electronic building bricks are provided, this substrate has a first surface and a side, and comprise a ground metal layer and at least one ground connection weld pad, this ground metal layer is positioned at this substrate, and be revealed in the side of this substrate, this ground connection weld pad is positioned at this substrate, is revealed in the first surface of this substrate, and be electrically connected to this ground metal layer, these electronic building bricks are positioned at the first surface of this substrate;
Form an adhesive body on the first surface of this substrate, to coat these electronic building bricks, this adhesive body comprises a upper surface, a lower surface and a side;
Remove this adhesive body of part, to form at least one groove, this groove runs through the upper surface and the lower surface of this adhesive body, and between these electronic building bricks;
Fill up an inner shield body in this groove, this inner shield body is electrically connected to this ground connection weld pad;
Cut this substrate and this adhesive body; And
Form a shielding layer, covering the side of this adhesive body and this substrate, and electrically connect this ground metal layer and this inner shield body.
12. method as claim 11, wherein this substrate more comprises a grounded metal zone and a welding resisting layer on one, should go up the grounded metal zone and be positioned at this substrate, and be revealed in the first surface of this substrate, this welding resisting layer is positioned at the first surface of this substrate, and have at least one opening, appear part and should go up the grounded metal zone, to form this ground connection weld pad.
13. as the method for claim 11, wherein this provides in the step of a substrate and several electronic building bricks, comprises that more one forms the step of at least one first scolder on this ground connection weld pad, this first scolder is electrically connected to this inner shield body.
14. as the method for claim 13, wherein this provides after the step of a substrate and several electronic building bricks, more comprises the step of this first scolder of a reflow, the surface that makes this first scolder is circular-arc.
15. as the method for claim 13, wherein this groove appears this first scolder of part, this inner shield body is electrically connected to this ground connection weld pad by this first scolder.
16. as the method for claim 11, wherein this groove has a long limit and a minor face, has a spacing between the side of this minor face and this adhesive body.
17. as the method for claim 11, wherein this groove comprises several sections, has a spacing between adjacent two sections.
18. as the method for claim 11, wherein this fills up in the step of an inner shield body in this groove, utilizes the wire mark methods to form this inner shield body.
19. as the method for claim 11, wherein the material of this inner shield body is scolder or conducting resinl.
20., wherein should form after the step of a shielding layer as the method for claim 11, more comprise the step that forms an anti oxidation layer, this anti oxidation layer covers this shielding layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910211804 CN102054821B (en) | 2009-10-30 | 2009-10-30 | Packaging structure with internal shield and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910211804 CN102054821B (en) | 2009-10-30 | 2009-10-30 | Packaging structure with internal shield and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102054821A true CN102054821A (en) | 2011-05-11 |
| CN102054821B CN102054821B (en) | 2013-09-11 |
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