CN102046837A - 溅射装置 - Google Patents
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Abstract
本发明提供一种低成本的溅射装置,其可促进从靶上飞溅的原子的离子化以进行稳定的自溅射。其包括:与在真空腔(2)内应处理的基板W相对配置的靶(3),在靶的溅射面的前方形成磁场的磁铁组合件(4),以及向靶施加负的直流电位的DC电源(5)。在靶的溅射面的背面一侧的中央区域设置第一线圈(6),所述第一线圈电连接在所述第一电源和所述靶的输出之间;当由所述溅射电源向所述靶施加负电位时,所述第一线圈被通电并在溅射面的前方产生磁场。
Description
技术领域
本发明涉及溅射装置,尤其是可以稳定地进行自溅射的DC磁控管溅射装置。
背景技术
随着近年布线图案的细微化,需要进一步提高覆层表面的均匀性。作为实现上述要求的一个方法,例如可使用公知的利用SIP(Self-lonized Plasma)技术的DC磁控管溅射装置。应用上述SIP技术,通过在电子约束能力较高的磁场中施加高电压,可得到高密度的等离子体。
作为可稳定地进行上述自溅射的装置,公知的有专利文献1所述的下述构成:在靶的溅射面的背面侧设置磁铁组合件以在靶溅射面的前方形成磁场,同时在真空腔的侧面设置线圈,通过线圈用电源给该线圈通电使相对溅射面产生垂直的磁场,以促进从靶上飞溅的原子的离子化。
但是,在上述专利文献1记载的装置中,因为另外设置给线圈通电的电源,故会导致溅射装置的高成本问题。并且,为了调节磁场的强度和磁场的方向,还需要具备控制线圈通电电流的电流控制电路,使成本进一步提高。
专利文献1:特开2000-144411号公报
发明内容
本发明的问题是提供一种低成本的溅射装置,其可促进从靶上飞溅的原子的离子化以进行稳定的自溅射。
为解决上述问题,本发明的溅射装置,其特征在于,包括:与在真空腔内应处理的基板相对配置的靶,在所述靶的溅射面的前方形成磁场的磁铁组合件,以及向所述靶施加负直流电位的第一电源;在所述靶的溅射面的背面侧设置的第一线圈,所述第一线圈电连接在所述第一电源和所述靶的输出之间;当由所述溅射电源向所述靶施加负电位时,所述第一线圈被通电并在溅射面的前方产生磁场。
根据本发明,例如通过第一电源对靶施加预设的规定的负电位,则与靶上所施加的电位和等离子体的阻抗对应的电流流过第一线圈,产生磁场。据此,可增减由磁铁组合件在靶的溅射面的前方产生的磁场的强度。此时,适当调节对靶的施加电力以控制第一线圈上通过的电流,或改变第一线圈中通过的电流的方向,即可在相对靶的溅射面产生任意强度的垂直磁场。
根据本发明,由于采用了向靶施加负电位时所述第一线圈被通电的构成,故不需要使用线圈用电源,此外,可根据对靶的施加电力而增减第一线圈的电流,所以不需要第一线圈的电流控制电路,可进一步降低成本。
本发明优选具有下述构成:还包括:电极,其设置在真空腔内,在溅射面前方所述靶与所述基板之间围成一个空间;以及在所述电极上施加正的直流电位的第二电源;沿所述真空腔的侧壁设置第二线圈,所述第二线圈电连接在所述第二电源和所述电极的输出之间;当由所述第二电源向所述电极施加正电位时,所述第二线圈被通电并在溅射面的前方产生磁场。
根据本发明,通过第二电源使电流通过第二线圈对电极施加规定的正电位,则可在靶和基板之间的空间中产生磁场。此时,适当调节对电极的施加电力以控制第二线圈上通过的电流,或改变第二线圈中通过的电流的方向,即可在相对靶的溅射面产生任意强度的垂直磁场。其结果是可促进从靶上飞溅的原子的离子化以进行稳定的自溅射,实现低成本的溅射装置。
另外,优选采用分别具有切换装置的构成,用以切换向所述第一和第二线圈的通电,可随意实现第一和第二两个线圈的通电。此时,不仅是通电的切换,也可优选为切换线圈中电流的方向。
具体实施方式
以下参照附图说明本发明的溅射装置。如图1所示,溅射装置1为可进行自溅射的DC磁控管溅射式装置,具有可形成真空气氛的真空腔2。真空腔2的顶部设有阴极单元C。阴极单元C具有靶3,以及在靶3的溅射面3a前方形成磁场的磁铁组合件4。
根据在处理基板W上成膜的成分,靶3由适当选择的材料、例如Cu制,以公知的方法制成规定的形状。靶3电连接在第一电源即DC电源5上,被施加规定的负电位。磁铁组合件4配置在溅射面3a的背面一侧,具有与靶3平行设置的板状轭铁4a,以及在该轭铁4a的上面可交替改变靶的极性而同心设置的环状磁铁4b、4c。并且,磁铁4b、4c的形状和个数,可根据在靶3的前方形成的磁场而适当选择,例如可以为薄片状或棒状,以及上述的适当组合。
另外,轭铁4a的中央部(本实施例中位于通过靶3的中心的中心线上)上,设有第一线圈6,其由导线6b缠绕在圆柱状磁性芯材6a的周围而形成。并且,第一线圈6的位置,可根据磁铁组合件4b、4c的位置适当变更。导线6b的两端借助切换开关7(切换装置)电连接在由DC电源5到靶3的输出上。当通过DC电源5对靶3施加预设的规定的负电位时,则与靶3上所施加的电位和等离子体的阻抗对应的电流流过第一线圈6,产生磁场。此处,虽然省略了图示,但优选设置具有公知结构的另一切换开关,构成为使第一线圈6中电流的方向可以反转。
据此,可以增减通过磁铁组合件4在靶3的溅射面3a的前方产生的磁场的强度。此时,通过适当设定导线6b的圈数并适当调节对靶3的施加电力控制通过第一线圈6的电流,或改变第一线圈6中的电流方向,可相对靶3的溅射面3a产生规定强度的垂直磁场。
根据本实施例,由于采用了向靶3施加负电位时第一线圈6被通电的构成,故不需要使用线圈用电源。此外,可根据对靶3的施加电力而增减第一线圈6的电流,所以不需要第一线圈6的电流控制电路,可实现低成本。
另外,在真空腔2的底部上与靶3相对设置有台部8,可对要处理的硅晶片等基板W进行定位并保持。台部8电连接在具有公知结构的高频电源9上,在溅射中,可以对台部8、进而对基板W施加偏压电位。
另外,真空腔2中设置有电极即离子反射板10,其在靶3的溅射面3a与基板S之间的位置包围溅射面3a前方的空间。离子反射板10具有大于靶3外径的内径,大致呈圆柱状,借助绝缘体10a沿真空腔2的壁面安装。离子反射板10与第二电极即另一DC电源11电连接,且被施加规定的正电位。
在真空腔2的外侧壁上设有第二线圈12,其由导线12b缠绕在配置于靶3和台部8之间的环状磁性材料构成的轭铁12a上而形成。导线12b的两端借助另一切换开关(开关装置)13电连接在由DC电源11到离子反射板10的输出上。当通过DC电源11对离子反射板10施加规定的正电位时,则电流流过第二线圈12,离子反射板10上被施加规定的正电位,在溅射面3a和基板W之间的空间中产生磁场。此处,虽然省略了图示,优选设置具有公知结构的另一切换开关,以使第二线圈12中电流的方向可以反转。
如上所述,通过适当设定导线6b的圈数并适当调节对离子反射板10的施加电力控制通过第二线圈12的电流,或改变第二线圈12中的电流方向,可相对靶3的溅射面3a产生规定强度的垂直磁场。其结果是可促进从靶3上飞溅的原子的离子化以进行稳定的自溅射,实现低成本的溅射装置1。
在真空腔2的侧壁上设有导入氩气等溅射气体的气管14,其另一端通过未图示的流量控制器与气源连接。另外,在真空腔2上还连接有排气管15a,其与连通涡轮分子泵及回转泵等构成的真空排气装置15相连通。
下面以使用上述溅射装置1成膜时在基板W上形成Cu膜为例进行说明。首先,将台部8载置到基板W上之后,使真空排气装置15动作将真空腔2内吸真空到规定的真空度(例如10-5Pa)。当真空腔2内的压力达到规定值时,一边向真空腔2内以规定的流量导入氩气等溅射气体,一边由DC电源5向靶3施加规定的负电位(电力投入),在真空腔2内生成等离子体气氛。此时,切换切换开关7给第一线圈6通电以产生磁场,通过磁铁组合件4增加靶3的溅射面3a的前方产生的磁场强度。
并且,在由偏压电源9向台部8施加偏压电位的同时,由DC电源11向离子反射板10施加规定的正电位。此时,切换切换开关13给第二线圈12通电,相对靶3的溅射面3a生成垂直的磁场。
随后,使等离子体中的氩离子冲击溅射面3a,溅射面3a被溅射,从溅射面3a上飞溅出铜原子。如此,溅射粒子铜原子飞向基板W,在基板W表面附着、沉积。在溅射中,由于磁铁组合件4及第一第二两线圈6、12产生的磁场,溅射面3a前方电离的电子和通过溅射生成的二次电子被捕捉,在溅射面3a的前方等离子体的密度变大。
另外,本实施方式中是以在靶3的背面中央部设置第一线圈6、在真空腔2的侧壁上设置第二线圈12的结构为例进行说明的,但不限于上述结构,也可适当设定线圈的位置,并且,只要是给线圈通电产生磁场的结构,都适用于本发明。
附图说明
图1本发明的具体实施方式的溅射装置的剖面示意图。
附图标记说明
1,DC磁控管溅射装置
2,真空腔
3,靶
3a,溅射面
4,磁铁组合件
5、11,DC电源(第一和第二各电源)
6、12,第一和第二各线圈
7、13,切换开关(切换装置)
10,离子反射板(电极)
C,阴极单元
W,基板
Claims (3)
1.一种溅射装置,其特征在于包括:与在真空腔内应处理的基板相对配置的靶,在所述靶的溅射面的前方形成磁场的磁铁组合件,以及向所述靶施加负直流电位的第一电源;
在所述靶的溅射面的背面一侧设置第一线圈,所述第一线圈电连接在所述第一电源和所述靶的输出之间;当由所述溅射电源向所述靶施加负电位时,所述第一线圈被通电并在溅射面的前方产生磁场。
2.根据权利要求1记载的溅射装置,其特征在于还包括:电极,其设置在所述真空腔内,在溅射面前方所述靶与所述基板之间围成的空间;以及第二电源,其在所述电极上施加正直流电位;沿所述真空腔的侧壁设置第二线圈,所述第二线圈电连接在所述第二电源和所述电极的输出之间;当由所述第二电源向所述电极施加正电位时,所述第二线圈被通电并在溅射面的前方产生磁场。
3.根据权利要求1或2记载的溅射装置,其特征在于,还具有切换装置,其交替切换地给第一和第二的两个线圈通电。
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PCT/JP2009/060283 WO2009150997A1 (ja) | 2008-06-11 | 2009-06-04 | スパッタリング装置 |
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CN109811320A (zh) * | 2017-11-21 | 2019-05-28 | 佳能特机株式会社 | 溅射装置 |
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JP2011256441A (ja) * | 2010-06-10 | 2011-12-22 | Ulvac Japan Ltd | スパッタリング方法 |
WO2012070195A1 (ja) * | 2010-11-24 | 2012-05-31 | 株式会社アルバック | スパッタリング方法 |
KR101419678B1 (ko) * | 2012-04-18 | 2014-07-15 | 주식회사 아바코 | 무기막의 증착 장치 및 방법, 및 이를 이용한 유기 발광 표시 소자의 제조 방법 |
KR101506000B1 (ko) * | 2013-02-27 | 2015-03-27 | (주)이루자 | 기판처리장치와 이를 이용한 전자소자용 기판 제조 방법 및 평판표시장치 제조방법 |
KR101506001B1 (ko) * | 2013-03-27 | 2015-03-27 | (주)이루자 | 기판처리장치와 이를 이용한 전자소자용 기판 제조 방법 및 평판표시장치 제조방법 |
JP6105115B1 (ja) * | 2016-03-14 | 2017-03-29 | 株式会社東芝 | 処理装置及びコリメータ |
CN114438463B (zh) * | 2022-01-25 | 2023-02-03 | 吉林大学 | 一种芯片真空镀膜装置及镀膜方法 |
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CZ154293A3 (en) | 1993-07-29 | 1995-02-15 | Fyzikalni Ustav Avcr | Process and apparatus for magnetron sputtering |
WO1995004368A1 (en) | 1993-07-29 | 1995-02-09 | Institute Of Physics Academy Of Sciences Of The Czech Republic | Method and device for magnetron sputtering |
JP3243357B2 (ja) | 1993-12-21 | 2002-01-07 | 株式会社神戸製鋼所 | 真空アーク蒸着装置 |
DE69416963T2 (de) | 1993-12-17 | 1999-09-16 | Kobe Steel Ltd | Vorrichtung zur Bogenbeschichtung im Vakuum |
US5710486A (en) * | 1995-05-08 | 1998-01-20 | Applied Materials, Inc. | Inductively and multi-capacitively coupled plasma reactor |
JP2000144411A (ja) | 1998-10-30 | 2000-05-26 | Applied Materials Inc | スパッタリング装置および成膜方法 |
JP5137332B2 (ja) | 2006-05-17 | 2013-02-06 | 株式会社アルバック | 成膜装置の運転方法 |
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CN109811320B (zh) * | 2017-11-21 | 2022-07-22 | 佳能特机株式会社 | 溅射装置 |
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TWI548766B (zh) | 2016-09-11 |
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TW201009104A (en) | 2010-03-01 |
KR20110027703A (ko) | 2011-03-16 |
JP5611039B2 (ja) | 2014-10-22 |
CN102046837B (zh) | 2012-12-12 |
WO2009150997A1 (ja) | 2009-12-17 |
US20110062019A1 (en) | 2011-03-17 |
US8377269B2 (en) | 2013-02-19 |
DE112009001457T5 (de) | 2011-04-28 |
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