CN102045028B - Low noise amplifier with adjustable gain - Google Patents

Low noise amplifier with adjustable gain Download PDF

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Publication number
CN102045028B
CN102045028B CN201110000175A CN201110000175A CN102045028B CN 102045028 B CN102045028 B CN 102045028B CN 201110000175 A CN201110000175 A CN 201110000175A CN 201110000175 A CN201110000175 A CN 201110000175A CN 102045028 B CN102045028 B CN 102045028B
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connects
drain electrode
inductance
source
gain
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CN102045028A (en
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吴建辉
竺磊
陈超
李红
张萌
杨世铎
徐震
赵亮
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Southeast University Wuxi branch
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Southeast University
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Abstract

The invention discloses a low noise amplifier with adjustable gain. The low noise amplifier provided by the invention is characterized in that two groups of cascode tubes are crossed and connected in parallel on a main body cascode tube; the amplified current of a transitron is crossed and shunted; partial radio frequency (RF) input positive current flows to a negative output end; and partial RF input negative current flows to a positive output end, thus a gain control circuit which can adjust the gain of the low noise amplifier is formed through crossed cancellation. Compared with the traditional method for controlling the gain of the low noise amplifier, the low noise amplifier with adjustable gain has the characteristics that the system noises is not increased when the gain is adjusted, the gain control is accurate, the bias and input impedance are not influenced, and the power consumption is not increased.

Description

A kind of Gain Adjustable low noise amplifier
Technical field
The present invention relates to a kind of Gain Adjustable low noise amplifier.
Background technology
Gain control mechanism is widely used in the Modern Communication System, and through gain controlling, circuit can be expanded the dynamic range that receives signal, reduces power consumption and improves the linearity.Especially in recent years, the fast development of portable radio-frequency terminal market makes power consumption become the Consideration of an ever more important.The decay of signal and the existence of reflex have caused the variation of receiver front end signal power; The input range of receiver can reach more than the 80dB; Like the large-signal from the small-signal to tens of several microvolts millivolt, low noise amplifier LNA should possess the ability of accepting to handle the great dynamic range radiofrequency signal as the first order circuit of radio-frequency receiving system.Controllable gain can be avoided the saturated of receiver element effectively, simultaneously handheld device is operated under the pattern of low gain, low-power consumption, thereby prolongs its battery life.In receiver, low noise amplifier must be to next stage circuit (frequency mixer) output appropriate signals.Signal gets too small, frequency mixer can't detect; Signal is excessive can to cause overload to frequency mixer again, and the linearity is worsened.And the signal that low noise amplifier receives from antenna is a signal that dynamic range is very big, so the controlled very necessity that becomes of LNA gain-adjusted.
Gain control mainly contains following several kinds: 1 switching load method.Major advantage is that gain-adjusted can not have a strong impact on the circuit noise coefficient, and still, the gain-adjusted step-length changes very responsive for the spurious impedance on the load bearing chain, possibly influence voltage bias simultaneously.2 by-pass switch methods.Signal can pass through from another other path of active device, and this path is controlled by switch, thereby realizes different ground gain controlling.Switch ways can cause loss, but needs only loss in acceptable scope, and this technology still is feasible, and the gain and the linearity are uncontrollable really.3 current separation methods.This method is isolated the output current of amplifier with bypass, but this electric current and amplifier output current sum are constant, so output current can diminish, gain reduces.This method circuit is realized simple, and power consumption is constant, but can the severe exacerbation noise factor under low gain mode.4 change biasing.This method comes down to control the input pipe mutual conductance, or control amplifier tube mutual conductance, realizes that easily gain flatness can not worsen during change in gain, but noiseproof feature can worsen, and is difficult to accurate control.
Summary of the invention
Goal of the invention: the objective of the invention is to the deficiency to prior art, the Gain Adjustable low noise amplifier that provide a kind of and do not increase system noise, do not influence biasing and input impedance, do not increase power consumption, gain-adjusted can accurately be controlled.
Technical scheme: Gain Adjustable low noise amplifier of the present invention; Forms by input coupling, amplifying stage, gain controlling and output LC resonant network three parts, on main body cascade pipe, intersect and connect two groups of cascade pipes, mutual conductance pipe amplified current is intersected shunt; The positive current of part radio frequency input flows to negative output terminal; The negative current of part radio frequency input flows to positive output end, thereby cross cancellation forms the gain control circuit that can realize the low noise amplifier gain-adjusted, and wherein gain control circuit can be according to the power of input signal; Control the break-make of intersecting and connecing the cascade pipe, thereby regulate the gain of low noise amplifier.
Gain Adjustable low noise amplifier of the present invention, concrete scheme is: comprise input amplifying stage, gain control circuit and export resonance; Said input amplifying stage comprises N type MOS transistor (being called for short the NMOS pipe) M1, the M2 as radio frequency mutual conductance pipe, as M3, the M4 of cascade pipe (cascade transistor), source degeneracy inductance L s1, Ls2, grid inductance L g1, Lg2, biasing resistor R1, R2; Said gain control circuit is made up of N type MOS transistor M5, M6, M7, M8, and M5 and M6 control break-make by Vcont1, and M7 and M8 control break-make by Vcont2; Said export resonance comprises resonant inductance Ld1, Ld2, and the switched capacitor array of being made up of capacitor C A1, CA2, CA3, CA4 switching tube M9, M10, M11, M12;
The anodal anode of linking inductance L g1 of radio frequency input, the negative terminal of inductance L g1 links to each other with the grid of M1; Radio frequency input negative pole is linked the anode of inductance L g2, and the negative terminal of inductance L g2 links to each other with the grid of M2; The source electrode of M1 pipe connects the anode of inductance L s1, the negativing ending grounding of inductance L s1; The source electrode of M2 pipe connects the anode of inductance L s2, the negativing ending grounding of inductance L s2; The grid of the positive termination M1 of biasing resistor R1, the grid of the positive termination M2 of R2, the negative terminal of R1 and R2 connects bias voltage; The drain electrode of M1 connects the source class of M3, and the drain electrode of M3 connects the negative terminal of inductance L d1, the positive termination power of inductance L d1; The drain electrode of M2 connects the source class of M4, and the drain electrode of M4 connects the negative terminal of inductance L d2, the positive termination power of inductance L d2; The grid of M3, M4 connects bias voltage; The M5 source electrode connects the M4 source electrode, and drain electrode connects the M3 drain electrode; The M6 source electrode connects the M3 source electrode, and drain electrode connects the M4 drain electrode; The M7 source electrode connects the M4 source electrode, and drain electrode connects the M3 drain electrode; The M8 source electrode connects the M3 source electrode, and drain electrode connects the M4 drain electrode; The grid of M5, M6 meets control voltage Vcont1, and M7, M8 grid meet control voltage Vcont2; The top crown of capacitor C A1 connects the drain electrode of M4, and bottom crown connects the drain electrode of M9, the source ground of M9; The top crown of capacitor C A2 connects the drain electrode of M3, and bottom crown connects the drain electrode of M10, the source class ground connection of M10; The grid of M9, M10 meets control voltage Vcont3; The top crown of capacitor C A3 connects the drain electrode of M4, and bottom crown connects the drain electrode of M11, the source ground of M11; The top crown of capacitor C A4 connects the drain electrode of M3, and bottom crown connects the drain electrode of M12, the source class ground connection of M12; The grid of M11, M12 meets control voltage Vcont4; The drain electrode of M3 connects the radio frequency output cathode, and the drain electrode of M4 connects the radio frequency output negative pole.
Gain Adjustable low noise amplifier of the present invention adopts cascade source degeneracy inductive type common-source amplifier structure, source degeneracy inductive type common-source amplifier has that noise factor is low, gain is high, the linearity well and can realize characteristics such as input impedance matching.Adopt differential configuration, can eliminate source class inductance L s well and change, improve the inhibition ability of LNA simultaneously the substrate coupling to the LNA Effect on Performance.Source degeneracy inductance common source input is made up of M1, M2, Ls1, Ls2, Lg1 and Lg2, the Cgs resonance of Lg, Ls and amplifier tube, and making the input impedance imaginary part is 0, thereby realizes impedance matching.M3 and M4 can improve the output impedance of amplifier as the cascade pipe, reduce amplifier tube Miller effect pair amplifier Effect on Performance, have also improved the reverse isolation degree simultaneously, have avoided stability problem.At output, inductance L d1, Ld2, the drain terminal electric capacity that switched capacitor array and M3 and M4 pipe is total is formed output LC resonance, and switched capacitor array can make exports exactly that resonance reduces the Harmonic Interference to late-class circuit on required Frequency point.
The gain controlling part is made up of transistor M5, M6, M7, M8, and M5 and M6 control break-make by Vcont1, and M7 and M8 control break-make by Vcont2.Radio-frequency input signals is converted into radio-frequency current through mutual conductance pipe M1, M2, and radio-frequency current flows through the cascade pipe, and the LC resonant load, and output voltage signal is to drive the capacity load (for fully integrated CMOS receiver) of next stage.The resistance of seeing into from the source class of cascade pipe M3~M8 is the 1/g reciprocal of MOS device mutual conductance m, the size of therefore isolating electric current depends on transistorized mutual conductance g mIf gate-on voltage Vcont2 and the M3 of gate-on voltage Vcont1 and M7, the M8 of M5, M6 is set, the bias voltage Vbias3 of M4 is supply voltage, then g mSize just fully determine by the size of transistor self.To sum up,, the size of intersecting and connecing the cascade pipe is set rationally, just can realizes gain-adjusted according to the requirement of required gain controlling.
The present invention compared with prior art; Its beneficial effect is: 1, Gain Adjustable low noise amplifier of the present invention, through the cascade pipe that intersects and connect, the shunting of mutual conductance pipe amplified current intersection; The positive current of part radio frequency input flows to negative output terminal; The negative current of part radio frequency input flows to positive output end, thereby cross cancellation realizes the adjusting of gain; 2, the gain control of low noise amplifier is based on the cascade pipe that intersects and connect, and the noise of cascade pipe is very little to the contribution of exporting, so this gain control does not increase system noise; Separate the size decision of electric current simultaneously, so gain controlling is accurate by the cascade pipe; Separate the electric current of electric current, thereby total current is constant, so do not increase power consumption from the mutual conductance pipe; The present invention simultaneously also has the characteristics that do not influence biasing and input impedance.
Description of drawings
Fig. 1 is a Gain Adjustable amplifier circuit in low noise structural representation of the present invention.
Fig. 2 is the gain controlling principle schematic of low noise amplifier of the present invention; On main body cascade pipe, intersect and connect two groups of cascade pipes; The shunting of mutual conductance pipe amplified current intersection, the positive current of part radio frequency input flows to negative output terminal, and the negative current of part radio frequency input flows to positive output end; Thereby cross cancellation realizes the gain-adjusted of low noise amplifier.
Fig. 3 is the simulation curve figure of low noise amplifier of the present invention S21 under four kinds of gain modes, and wherein black solid line is the least gain pattern, and pecked line is the maximum gain pattern; According to the requirement of required gain controlling, the size of intersecting and connecing the cascade pipe rationally is set, just can realize desired gain-adjusted effect.
Fig. 4 is the simulation curve figure of low noise amplifier of the present invention noise factor NF under four kinds of gain modes, and wherein black solid line is the least gain pattern, and pecked line is the maximum gain pattern.
Embodiment
Below in conjunction with accompanying drawing, through a most preferred embodiment, technical scheme of the present invention is elaborated, but protection scope of the present invention is not limited to said embodiment.
Gain Adjustable low noise amplifier of the present invention; The basic thought of Gilbert cell being realized variable gain amplifier is applied to low noise amplifier, on main body cascade pipe, intersects and connects two groups of cascade pipes, intersects shunting to mutual conductance pipe amplified current; The positive current of part radio frequency input flows to negative output terminal; The negative current of part radio frequency input flows to positive output end, thereby cross cancellation realizes the gain-adjusted of low noise amplifier.
As shown in Figure 1, Gain Adjustable low noise amplifier of the present invention comprises input amplifying stage, gain control circuit and export resonance.The input amplifying stage comprises N type MOS transistor (hereinafter to be referred as the NMOS pipe) M1, the M2 as radio frequency mutual conductance pipe, as M3, the M4 of cascade pipe (cascade transistor), source degeneracy inductance L s1, Ls2, grid inductance L g1, Lg2, biasing resistor R1, R2.The gain controlling part is made up of NMOS pipe M5, M6, M7, M8, and M5 and M6 control break-make by Vcont1, and M7 and M8 control break-make by Vcont2.Export resonance partly comprises resonant inductance Ld1, Ld2, and the switched capacitor array of being made up of capacitor C A1, CA2, CA3, CA4 switching tube M9, M10, M11, M12.
The anodal anode of linking inductance L g1 of radio frequency input, the negative terminal of inductance L g1 links to each other with the grid of M1.Radio frequency input negative pole is linked the anode of inductance L g2, and the negative terminal of inductance L g2 links to each other with the grid of M2.The source electrode of M1 pipe connects the anode of inductance L s1, the negativing ending grounding of inductance L s1.The source electrode of M2 pipe connects the anode of inductance L s2, the negativing ending grounding of inductance L s2.The grid of the positive termination M1 of biasing resistor R1, the grid of the positive termination M2 of R2, the negative terminal of R1 and R2 connects bias voltage.The drain electrode of M1 connects the source class of M3, and the drain electrode of M3 connects the negative terminal of inductance L d1, the positive termination power of inductance L d1.The drain electrode of M2 connects the source class of M4, and the drain electrode of M4 connects the negative terminal of inductance L d2, the positive termination power of inductance L d2.The grid of M3, M4 connects bias voltage.The M5 source electrode connects the M4 source electrode, and drain electrode connects the M3 drain electrode; The M6 source electrode connects the M3 source electrode, and drain electrode connects the M4 drain electrode; The M7 source electrode connects the M4 source electrode, and drain electrode connects the M3 drain electrode; The M8 source electrode connects the M3 source electrode, and drain electrode connects the M4 drain electrode.The grid of M5, M6 meets control voltage Vcont1, and M7, M8 grid meet control voltage Vcont2.The top crown of capacitor C A1 connects the drain electrode of M4, and bottom crown connects the drain electrode of M9, the source ground of M9.The top crown of capacitor C A2 connects the drain electrode of M3, and bottom crown connects the drain electrode of M10, the source class ground connection of M10.The grid of M9, M10 meets control voltage Vcont3.The top crown of capacitor C A3 connects the drain electrode of M4, and bottom crown connects the drain electrode of M11, the source ground of M11.The top crown of capacitor C A4 connects the drain electrode of M3, and bottom crown connects the drain electrode of M12, the source class ground connection of M12.The grid of M11, M12 meets control voltage Vcont4.The drain electrode of M3 connects the radio frequency output cathode, and the drain electrode of M4 connects the radio frequency output negative pole.
As stated, although represented and explained the present invention that with reference to specific preferred embodiment it shall not be construed as the restriction to the present invention self.Under the spirit and scope of the present invention prerequisite that does not break away from the accompanying claims definition, can make various variations in form with on the details to it.

Claims (1)

1. Gain Adjustable low noise amplifier; It is characterized in that: on main body cascade pipe, intersect and connect two groups of cascade pipes; With the shunting of mutual conductance pipe amplified current intersection; The positive current of part radio frequency input flows to negative output terminal, and the negative current of part radio frequency input flows to positive output end, thereby cross cancellation formation can realize the low noise amplifier gain-adjusted;
Wherein this amplifier comprises input amplification grade circuit, gain control circuit and output resonant circuit; Said input amplification grade circuit comprises N type MOS transistor M1, the M2 as radio frequency mutual conductance pipe, as M3, the M4 of cascade pipe, source degeneracy inductance L s1, Ls2, grid inductance L g1, Lg2, biasing resistor R1, R2; Said gain control circuit is made up of N type MOS transistor M5, M6, M7, M8, and M5 and M6 control break-make by Vcont1, and M7 and M8 control break-make by Vcont2; Said output resonant circuit comprises resonant inductance Ld1, Ld2, and the switched capacitor array of being made up of capacitor C A1, CA2, CA3, CA4 switching tube M9, M10, M11, M12;
The anodal anode of linking inductance L g1 of radio frequency input, the negative terminal of inductance L g1 links to each other with the grid of M1; Radio frequency input negative pole is linked the anode of inductance L g2, and the negative terminal of inductance L g2 links to each other with the grid of M2; The source electrode of M1 pipe connects the anode of inductance L s1, the negativing ending grounding of inductance L s1; The source electrode of M2 pipe connects the anode of inductance L s2, the negativing ending grounding of inductance L s2; The grid of the positive termination M1 of biasing resistor R1, the grid of the positive termination M2 of R2, the negative terminal of R1 and R2 connects bias voltage; The drain electrode of M1 connects the source class of M3, and the drain electrode of M3 connects the negative terminal of inductance L d1, the positive termination power of inductance L d1; The drain electrode of M2 connects the source class of M4, and the drain electrode of M4 connects the negative terminal of inductance L d2, the positive termination power of inductance L d2; The grid of M3, M4 connects bias voltage; The M5 source electrode connects the M4 source electrode, and drain electrode connects the M3 drain electrode; The M6 source electrode connects the M3 source electrode, and drain electrode connects the M4 drain electrode; The M7 source electrode connects the M4 source electrode, and drain electrode connects the M3 drain electrode; The M8 source electrode connects the M3 source electrode, and drain electrode connects the M4 drain electrode; The grid of M5, M6 meets control voltage Vcont1, and M7, M8 grid meet control voltage Vcont2; The top crown of capacitor C A1 connects the drain electrode of M4, and bottom crown connects the drain electrode of M9, the source ground of M9; The top crown of capacitor C A2 connects the drain electrode of M3, and bottom crown connects the drain electrode of M10, the source class ground connection of M10; The grid of M9, M10 meets control voltage Vcont3; The top crown of capacitor C A3 connects the drain electrode of M4, and bottom crown connects the drain electrode of M11, the source ground of M11; The top crown of capacitor C A4 connects the drain electrode of M3, and bottom crown connects the drain electrode of M12, the source class ground connection of M12; The grid of M11, M12 meets control voltage Vcont4; The drain electrode of M3 connects the radio frequency output cathode, and the drain electrode of M4 connects the radio frequency output negative pole.
CN201110000175A 2011-01-04 2011-01-04 Low noise amplifier with adjustable gain Expired - Fee Related CN102045028B (en)

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CN103916084A (en) * 2012-12-28 2014-07-09 北京中电华大电子设计有限责任公司 Gain adjustable low noise amplifier circuit
CN103944518B (en) * 2013-01-22 2017-02-08 中国科学院微电子研究所 Broadband low-noise amplifier
CN106849894B (en) * 2017-01-23 2018-10-02 东南大学 A kind of gain-adjusted structure based on total grid cascode low-noise amplifiers
CN107612516A (en) * 2017-09-26 2018-01-19 周正高 Broadband numerical control Low Noise Variable Gain Amplifier
US10291194B2 (en) * 2017-10-09 2019-05-14 Infineon Technologies Ag System and method for biasing an RF circuit
CN108540102B (en) * 2018-04-23 2021-09-10 河北工程大学 Programmable gain amplifier
US10707817B2 (en) * 2018-05-30 2020-07-07 Speedlink Technology Inc. Wideband low noise amplifier (LNA) with a reconfigurable bandwidth for millimeter-wave 5G communication
CN108920779B (en) * 2018-06-13 2022-07-29 东南大学 Regeneration-based variable gain amplifier structure and control method thereof
CN115940852A (en) * 2021-09-22 2023-04-07 深圳市中兴微电子技术有限公司 Low-phase-shift variable gain amplifier and radio frequency signal processing method
CN114221627A (en) * 2021-12-20 2022-03-22 上海迦美信芯通讯技术有限公司 Circuit for improving linearity of multi-gain-level low noise amplifier by adopting load-controllable array
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6801089B2 (en) * 2001-05-04 2004-10-05 Sequoia Communications Continuous variable-gain low-noise amplifier
CN1860691A (en) * 2003-07-30 2006-11-08 马克西姆综合产品公司 Broadband single conversion tuner integrated circuits
CN101359901A (en) * 2007-07-27 2009-02-04 新泻精密株式会社 Variable gain amplifier
CN101834567A (en) * 2010-06-03 2010-09-15 中国人民解放军国防科学技术大学 Broadband gain adjustable low-noise amplifier

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070024377A1 (en) * 2005-07-28 2007-02-01 Xuezhen Wang Impedance matching techiques for multi-band or wideband RF amplifiers and associated amplifier designs

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6801089B2 (en) * 2001-05-04 2004-10-05 Sequoia Communications Continuous variable-gain low-noise amplifier
CN1860691A (en) * 2003-07-30 2006-11-08 马克西姆综合产品公司 Broadband single conversion tuner integrated circuits
CN101359901A (en) * 2007-07-27 2009-02-04 新泻精密株式会社 Variable gain amplifier
CN101834567A (en) * 2010-06-03 2010-09-15 中国人民解放军国防科学技术大学 Broadband gain adjustable low-noise amplifier

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