CN102027156A - 在化学气相沉积反应器中用于配气的***和方法 - Google Patents
在化学气相沉积反应器中用于配气的***和方法 Download PDFInfo
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Abstract
本发明提供在反应器中通过化学气相沉积制造多晶硅或另一材料的***和方法,其中利用硅竖管来分配气体。硅竖管可经由喷嘴耦合器接附到反应器***,使得先质气体(precursor gases)可注射到反应室的不同部份。结果,可改良在整个反应室内的气体流动,这能够增加多晶硅的产率、改善多晶硅的质量和降低能量消耗。
Description
相关申请的交互对照
本申请主张在2008年3月26日提交的共同申请中的美国临时申请案序号61/039,758的权益,该临时申请案揭示的全文以引用方式特意地并于本文。
技术领域
本发明是针对在反应器中通过化学气相沉积制造诸如多晶硅(polysilicon)的材料的***和方法。更具体而言,本发明涉及使用硅竖管(silicon standpipe)配气以改良在化学气相沉积反应器中的流动型式的***和方法。
背景技术
化学气相沉积(CVD)指的是通常在涉及从气相沉积固体材料的反应室中所发生的反应。CVD可以用来制造高纯度、高性能的固体材料,诸如多晶硅、二氧化硅、和氮化硅等。在半导体和光电(photovoltaic)工业中,常使用CVD来制造薄膜和基体(bulk)半导体材料。例如,可将受热表面曝露于一种或多种气体。随着气体被输送到反应室内,所述气体可与该受热表面接触。一旦此情况发生,随即发生气体的反应或分解而形成固相,该固相即沉积在基板表面上而产生期望的材料。对于此制程而言,其关键点为气体流动型式,这会影响这些反应发生的速率和产物的质量。
例如,在多晶硅化学气相沉积制程中,可从硅烷(SiH4)、二氯硅烷(SiH2Cl2)、三氯硅烷(SiHCl3)、和四氯硅烷(SiCl4)根据各自的反应而沉积出多结晶硅。这些反应通常是在真空或加压CVD反应器内,使用纯的含硅原料或含硅原料与其它气体的混合物来实施。这些反应所需的温度范围从摄氏数百度到超过一千度。若在CVD室中添加诸如膦(phosphine)、胂(arsine)或二硼烷(diborane)等气体,也可以利用掺杂而直接生长多晶硅。
所以,气体流动型式不仅对多晶硅和其它材料的生长具有关键性,而且也会影响整体CVD反应器***的生产速率、产物质量、和能量消耗。
发明内容
本发明涉及在化学气相沉积反应器中配气(尤其是)用以改良在CVD反应器中的气体流动的***和方法。因此,本发明可用来增加CVD反应室内的反应效率、增加固体沉积物的输出、改良产物质量、及降低整体操作成本。本发明还涵盖,在CVD反应器内、沉积在硅竖管上的硅可以用作附加的多晶硅产物。
在根据本发明的反应器***和方法中,尤其是,在CVD反应器***和方法中,利用的是竖管。该竖管可用来将各种反应物注射到反应室内。该竖管优选用硅或其它材料制造。这些材料包括,但不限于:金属、石墨、碳化硅、和其它适当的材料。根据应用,该竖管的长度范围为从约1至2厘米到约数米。根据气体流速,该竖管的直径范围为从约1至2毫米到长达数十厘米。管壁的厚度优选为约0.1至约5.0毫米。
本发明的反应器***包括反应室,其至少具有固定在反应室内的底板,和可操作地连接到该底板的包壳。在该反应室内有一条或多条丝接附到该底板,在这些丝上,可在化学气相沉积循环期间,沉积各种反应物气体。这些丝可以是硅丝或将要制造的其它所需固体。有至少一个气体入口和至少一个气体出口连接到该反应室以让气体流经该反应室。此外也装设一个用以观看该室的内部部份所用的窗部或观察口。电流源优选通过该底板内的电导引(electrical feedthrough)连接到这些丝的末端,用以供应电流以在CVD反应循环期间直接加热这些丝。也可以采用具有至少一个流体入口和至少一个流体出口的冷却***来降低该化学气相沉积***的温度。
根据本发明的竖管优选可操作地连接到至少一个将气体流注射到反应室所用的气体入口。该竖管优选包括个喷嘴耦合器和管体。该管体的长度和直径可以根据至少一项期望的气体流速而选择。该喷嘴耦合器可进一步包括诸如垫圈的密封装置,用以将该管体密封到至少一个气体入口。该竖管优选具有至少一个在该室内的注射管用以配送制程气体流。该至少一个注射管的尺寸是以期望的流速为基础。注射管材料可用硅或其它材料制成。
本发明的这些和其它特点和优点可从下面结合附图的优选实施例的说明更轻易地得以了解。
附图说明
为了使本发明所属领域中的普通技术人员不需过度的实验即可轻易地了解如何制作和使用本发明的方法和装置,下文将参照某些附图详细地说明本发明的优选实施例,其中:
图1为本发明反应室***的立体图;
图2为图1中的反应室的内部立体图;
图3A为根据本发明的竖管的剖视图;
图3B为附接到图3A的竖管的管体的喷嘴耦合器的放大图;
图3C为图3B中所示的喷嘴耦合器的垫圈的放大图;及
图4为包括多个竖管的本发明反应室***的局部横断面图。
具体实施方式
下文将参照附图说明本发明的优选实施例,其中相同的附图标记表示相同或类似的组件。
本发明涉及在反应器中分配气体(尤其是)用以改良在化学气相沉积(CVD)反应器中的气体流动所用的***和方法。具体而言,本发明涉及使用竖管在CVD反应器中分配气体所用的***和方法。本发明的效益和优点包括,但不限于,增加固体沉积物(如多晶硅)的生产速率、减低能量消耗和降低整体操作成本。虽然本发明的揭示内容是针对示例性的多晶硅CVD反应器***,不过本发明的***和方法可以应用到需要气体分配增加与气体流动型式改良的任何CVD反应器***,或任何一般的反应器***。
在示例性的应用中,是使用三氯硅烷在反应室内的棒或硅管丝上反应以在细棒或丝上形成多晶硅沉积物。本发明并不局限于使用涉及三氯硅烷反应的多晶硅沉积的CVD反应器,而且可用于涉及硅烷、二氯硅烷、四氯化硅或其它衍生物或气体组合的反应,例如可以根据本发明使用具有大表面面积几何尺寸(large surface area geometries)和相似的电阻性质的细棒或丝。可以利用具有各种形状和构造的丝,例如,在美国专利申请公开US2007/0251455中所揭示的,该公开以引用方式并入本文。
参照图1和图2,其显示的是化学气相沉积(CVD)反应器,其中,根据本发明使多晶硅沉积在细棒或丝上。反应器***10包括具有底板30的反应室12、气体入口喷嘴24或制程凸缘(process flange)、气体出口喷嘴22或排气凸缘(exhaust flange)、以及用以提供电流来直接加热在反应室12内的一条或多条丝28的电导引或导体20,如图2中所示。流体入口喷嘴18和流体出口喷嘴14连接到冷却***用以提供流体到反应室10。此外,优选有观察口16或窥镜(sight glass)用以目视检查反应室12的内部,且可视需要用以取得反应室12内部的温度测量。
根据如图1和图2中所示的本发明的优选实施例,反应器***10构造成用于多晶硅的基体制造。该***包括:底板30,其可为例如单一板或多块相对的板,优选地构造有丝支撑体;及包壳,其可接附到底板30以形成沉积室。如本文中所使用的,术语“包壳”指的是可发生CVD制程的反应室12的内部。
一条或多条硅丝28优选地配置在反应室12内、在丝支撑体(未图示)上,且电流源可通过在底板30中的电导引20连接到丝28的两端,用于供应电流以直接加热该丝。在底板30中进一步装设有至少一个气体入口喷嘴24,其可连通到例如含硅气体源,且在底板30中可装设有气体出口喷嘴22,由此可将气体从反应室12释放出。
参照图2,显示的是示例性的竖管42的结构,其中管体44优选可操作地连接到至少一个气体入口喷嘴24,用以配合在反应室12内发生的CVD反应而将各种气体注射到反应室12之内(也请参阅图3A)。虽然在图2中示出的是单一注射管42,不过在反应室内可包括一支或多支竖管。例如,参照图4,单一竖管可被多个竖管42所取代。根据期望的气体流动设计,每一竖管或注射管42的尺寸在长度上的变化为约1至2厘米到数米,在直径上的变化为约1至2毫米变到数十厘米。
根据期望的流动型式,一支或多支竖管42优选地用来注射一种或多种气体到反应室的不同部份。所述(多个)竖管42可用任何已知的安装机构接附到反应器,例如将管体44螺接到反应室12的入口喷嘴耦合器25(请参阅图3A至图3C,如本文中所述)。因为气体流动型式对于多晶硅的生长、生产速率、产物质量、和能量消耗至关重要,故本发明可应用于多晶硅制造过程和涉及硅或硅化合物沉积的任何其它制程。具体而言,本发明也可以应用于可能在管或其它形状的组件上发生腐蚀、污染、和沉积等情况的制程。
请再参照图3A至图3C,竖管42的各组件优选由硅管制成。硅是用作非硅材料(诸如可能在管体44内引起腐蚀、污染、熔化和不想要的硅沉积物的不锈钢或其它金属)的替代物。在管体44的一端,用来制造管体44的材料与能够进行机加工(machined)的材料熔接。这些材料包括金属、石墨、碳化硅和任何其它适当材料。在另一端上,如图3A至图3C中所示,管体44优选接附到具有适当直径的喷嘴耦合器25。该喷嘴耦合器25优选形成有垫圈26,用以提供在气体入口喷嘴24与竖管气体供应源之间的气密性密封。根据应用,管体44的长度范围为约数厘米到约数米。根据气体流速,管体44的直径范围为约数毫米到约数十厘米。管体44的壁厚优选在约数毫米或更小。管体44优选用硅制成。
在反应器内沉积材料的方法可包括下列步骤:提供反应室,该室包括固定在该反应室内的底板与可操作地连接到该底板的包壳;将至少一条丝接附到该底板;将电流源连接到该反应室以供应电流到该丝;将气体源连通到该反应室以让气体流经该反应室;连接竖管到该气体源用以在该反应室内分配气体流;及操作该反应器以在该反应室内的至少一条丝上沉积材料。
本发明的竖管的其它益处在于所述竖管可被再使用或回收。在气体注射制程期间,硅沉积在管体44之上。一旦硅逐渐积聚,就可以从管底取走硅并将其用作硅产物。
虽然已经参照优选实施例对本发明进行了描述,不过本技术领域中的普通技术人员可以轻易地理解,可以在背离所附权利要求所限定的本发明的精神或范围的情况下,对实施例进行修改或变型。
参考文献并入
本文中引用的所有专利、公开的专利申请和其它参考文献的全部内容在此特以引用方式整体并入本文。
Claims (23)
1.一种反应器***,包括:
反应室,该反应室至少包括固定在该反应室内的底板和可操作地连接到该底板的包壳;
至少一条丝,该至少一条丝接附到该底板;
电流源,该电流源用以供应电流到该至少一条丝;
气体源,该气体源可操作地连通到该反应室,以使气体流经该反应室;以及
竖管,该竖管可操作地连接到该气体源,用以将该气体流注入该反应室。
2.如权利要求1所述的反应器***,其中,该电流通过该底板内的电导引直接供应到该丝。
3.如权利要求1所述的反应器***,其中,该反应室还包括观察口,用以观看该反应室的内部部份。
4.如权利要求1所述的反应器***,其中,该竖管由硅制成。
5.如权利要求1所述的反应器***,还包括至少一个容置在该反应室内的额外的竖管。
6.如权利要求1所述的反应器***,其中,该竖管构造成在该反应室内容置多晶硅的沉积物。
7.如权利要求1所述的反应器***,其中,该竖管还包括喷嘴耦合器和管体,该喷嘴耦合器用于与该气体源连接。
8.如权利要求7所述的反应器***,其中,该管体的直径是根据至少期望的气体流速而选择。
9.如权利要求7所述的反应器***,其中,该喷嘴耦合器还包括垫圈,该垫圈用以将该竖管密封到该气体源。
10.如权利要求1所述的反应器***,其中,该反应器***是化学气相沉积反应器***。
11.如权利要求1所述的反应器***,还包括冷却***,该冷却***至少具有可操作地连接到该反应器***的流体入口和流体出口。
12.一种在反应器内沉积材料的方法,包括下列步骤:
设置反应室,该反应室至少包括固定在该反应室内的底板和可操作地连接到该底板的包壳;
将至少一条丝接附到该底板;
将电流源连接到该反应室,用以供应电流到该丝;
将气体源连通到该反应室,以使气体流经该反应室;
将竖管连接到该气体源,用以在该反应室内分配气体流;以及
操作该反应器,以在该反应室内的该至少一条丝上沉积该材料。
13.如权利要求12所述的方法,其中,沉积在该丝上的该材料为多晶硅。
14.如权利要求12所述的方法,其中,该丝包括硅。
15.如权利要求12所述的方法,其中,该反应器是化学气相沉积反应器。
16.如权利要求12所述的方法,还包括下列步骤:
通过在该底板内的电导引将该电流直接供应到该丝。
17.如权利要求12所述的方法,其中,该反应室还包括观察口,用以观看该反应室的内部部份。
18.如权利要求12所述的方法,其中,该竖管由硅制成。
19.一种反应室,包括:
至少一个底板,该底板固定在该反应室内;
至少一条丝,该至少一条丝接附到该底板,该反应室可操作地连接到电流源和气体源,以使得材料能够在该至少一条丝上沉积;以及
竖管,该竖管可操作地接附到该气体源,用以在该反应室内分配气体流。
20.如权利要求19所述的反应室,其中,电流由该电流源供应到该丝。
21.如权利要求20所述的反应室,其中,该电流通过在该底板内的电导引直接供应到该丝。
22.如权利要求19所述的反应室,还至少包括可操作地连接到该反应室的气体入口和气体出口,以使气体流经该反应室。
23.如权利要求19所述的反应室,还包括观察口,用以观看该反应室的内部部份。
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JP (1) | JP5727362B2 (zh) |
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CN (2) | CN104357807B (zh) |
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KR20100126569A (ko) | 2010-12-01 |
TWI494458B (zh) | 2015-08-01 |
CN104357807A (zh) | 2015-02-18 |
KR101623458B1 (ko) | 2016-05-23 |
JP5727362B2 (ja) | 2015-06-03 |
US20110129621A1 (en) | 2011-06-02 |
WO2009120862A3 (en) | 2010-01-28 |
MY156940A (en) | 2016-04-15 |
TW201002853A (en) | 2010-01-16 |
US8961689B2 (en) | 2015-02-24 |
WO2009120862A2 (en) | 2009-10-01 |
CN104357807B (zh) | 2019-06-28 |
RU2010143559A (ru) | 2012-05-10 |
RU2499081C2 (ru) | 2013-11-20 |
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JP2011515590A (ja) | 2011-05-19 |
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Free format text: CORRECT: APPLICANT; FROM: GT SOLAR INC. TO: GTAT CORPORATION |
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C12 | Rejection of a patent application after its publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20110420 |