CN102024506A - Aluminum paste for solar cell - Google Patents
Aluminum paste for solar cell Download PDFInfo
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- CN102024506A CN102024506A CN2010102873362A CN201010287336A CN102024506A CN 102024506 A CN102024506 A CN 102024506A CN 2010102873362 A CN2010102873362 A CN 2010102873362A CN 201010287336 A CN201010287336 A CN 201010287336A CN 102024506 A CN102024506 A CN 102024506A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
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Abstract
The invention provides an aluminum paste for solar cell capable of ensuring electrical characteristics, film strength, and film appearance, and inhibiting backside electrode warping. Since the aluminum paste contains a few amount of Sn powder, when the paste is used to form whole surface electrodes (26) on the back side surface of a silicon substrate (12) via printing, drying, and sintering, reducing warping of the silicon substrate (12). Furthermore, if Sn is added, water resisting property of the whole surface electrodes (26) containing aluminum is improved, additionally, since added amount is 0.3-5.0 parts by mass relative to Al 100 parts by mass, namely, a few amount of 0.21-3.5 parts by mass in 100 parts by mass of the paste, therefore, no influence is caused upon conductivity, film strength and appearance of the whole surface electrodes (26). Additionally, since warping can be inhibited with film thickness not being reduced, BSF effect can be fully obtained.
Description
Technical field
The present invention relates to be suitable for the aluminium cream (aluminium paste paste) that the backplate of solar cell is used.
Background technology
For example, general silicon is that solar cell has following structure: on as the silicon substrate of p type poly semiconductor across n
+Layer and be provided with antireflection film and sensitive surface electrode, and, in its lower section across p
+Layer and be provided with backplate.By being subjected to light, produce electric power at semi-conductive p-n junction (p-n joint), by electrode this electric power is taken out.
Said n
+Layer is the n that will be diffused into silicon substrate as the P (phosphorus) of the alloy of n type etc. and form
+Layer is with the thickness setting of 0.2～0.6 μ m degree in the silicon substrate of 160～300 μ m at thickness for example.In addition, antireflection film is the film that the film by silicon nitride, titanium dioxide, silicon dioxide etc. constitutes, thereby in order to ensure visible light transmissivity fully and reduce surface reflectivity and improve and be subjected to optical efficiency and be provided with.The sensitive surface electrode is by containing the electrode that thick-film material that silver etc. is used as the conductor composition forms, adopting the so-called perforation method (fire through method) etc. of burning till to be formed on this antireflection film.
On the other hand, backplate is made of roughly whole whole electrode being arranged to banded for example 2 strip electrodes and be arranged on except on this band electrode.Whole electrode is the electrode that is formed by the thick-film material that is the conductor composition with aluminium, and band electrode is the electrode that is formed by the thick-film material that is the conductor composition with silver.This band electrode is provided with for the purpose that lead etc. can be brazed in backplate.
When forming above-mentioned whole electrode, use silk screen print method etc. that aluminium cream is coated the back side, after the drying, implement to burn till processing under the corresponding temperature forming with cream.At this moment, the aluminium in the cream is diffused into silicon substrate and forms above-mentioned p
+Layer, side forms by pp overleaf
+The caused electric field of difference of Fermi level between the layer can obtain generating the BSF that the collection efficiency of the charge carrier improves (back of the body; Back Surface Field) effect.For above-mentioned aluminium cream, for example, organic vehicle and the frit (glass dust that is used to improve the aluminium pole strength in aluminium powder, have been added; Glass frit).
Patent documentation 1: TOHKEMY 2000-090734 communique
Patent documentation 2: TOHKEMY 2003-223813 communique
Patent documentation 3: TOHKEMY 2001-313402 communique
Patent documentation 4: TOHKEMY 2008-166344 communique
Patent documentation 5: TOHKEMY 2007-234625 communique
Patent documentation 6: the special fair 06-105792 communique of Japan
Patent documentation 7: TOHKEMY 2007-273760 communique
Summary of the invention
Yet, in above-mentioned solar cell, be reduced to purpose to seek cost in recent years, studying and make the silicon substrate reduced thickness below 200 μ m.But, if make the silicon substrate attenuation, then be used for that electrode forms burn till the time, result from coefficient of thermal expansion poor of silicon and aluminium, substrate produces stress, therefore has the silicon substrate warpage, and then the problem of cracking or the like takes place in manufacturing process.
Relative therewith, once proposed various reductions make the substrate thickness attenuate situation under the technology of warpage.For example, the technology of the gauge attenuation that makes the aluminium electrode is arranged (for example with reference to patent documentation 1.)。According to this technology, the stress when burning till diminishes, and therefore can suppress warpage, but owing to the aluminium diffusing capacity to the back side tails off, and then the BSF effect is weakened, therefore exist electrical characteristics to reduce, and be easy to generate blister (blister) and/or ball, thereby the also problem of variation of film outward appearance.
In addition, following proposal had also once been proposed: in aluminium cream, add the inorganic compound powder that coefficient of thermal expansion is littler than aluminium and fusing point is higher than aluminium of silicon dioxide and/or aluminium oxide etc. (for example with reference to patent documentation 2.)。According to this technology, the coefficient of thermal expansion of aluminium electrode diminishes because of the inorganic compound powder that adds, and the stress when therefore burning till diminishes, and then can suppress warpage, but because the insulating material ratio becomes many, so electrical characteristics reduce.And, because being subjected to the inorganic compound powder, the sintering of aluminium hinders, therefore have the problem that film-strength also reduces.
In addition, once proposed in aluminium cream, to add the scheme of Si powder (for example with reference to patent documentation 3.)。Reduce and then suppress the purpose of warpage and add Si powder for the coefficient of thermal expansion that makes the aluminium electrode, but the Al-Si eutectic point is 577 ℃, lower than 660 ℃ of the fusing points of aluminium, so the liquid phase quantitative change in the film is many, and then the thickness that is formed at the alloy-layer at the back side also increases.Therefore, opposite with above-mentioned purpose, warpage can increase on the contrary.Also once proposed to add the scheme of Al-Mg alloy powder or Mg powder (for example with reference to patent documentation 4.)。If the Al ratio is in high scope, then the Al-Mg eutectic point is low is 450 ℃, and therefore same with the situation of having added Si powder, warpage increases on the contrary.
In addition, the technology that has the alloy powder that contains aluminium that fusing point is higher than aluminium to add in the aluminium cream (for example refers to Patent Document 5.)。As the formation element of alloy, can enumerate titanium and vanadium etc.According to this technology, by adding alloy powder, the temperature of separating out of solid phase rises, so the amount of liquid phase reduction, and then can suppress warpage.But, have the problem that causes the conductivity of aluminium electrode to reduce by the high-melting-point alloy powder.In the technology of record, can not suppress warpage in these patent documentations 1～5, perhaps other characteristics such as electrical characteristics, tensile strength, film outward appearance reduce, and therefore can not obtain characteristic of solar cell.
The present invention is that background is finished with above-mentioned situation, and its purpose is to provide a kind of can guarantee electrical characteristics, film-strength and film outward appearance, and can suppress the used for solar batteries aluminium cream of backplate warpage.
In order to reach this purpose, main idea of the present invention relates to a kind of used for solar batteries aluminium cream, and this aluminium cream is to comprise Al powder, frit, vehicle (vehicles; Vehicle) used for solar batteries aluminium cream with respect to above-mentioned Al powder 100 mass parts, contains the Sn powder with the ratio in the scope of 0.3～5.0 mass parts.
According to the present invention, owing in aluminium cream, contain a spot of Sn powder, therefore, then can reduce the warpage of this silicon substrate if use this cream by printing, dry and burn till and on silicon substrate, form backplate.Although the Al-Sn eutectic point is 228 ℃, significantly lower than the fusing point of Al, also unclear is because due to what kind of effect, different with the situation of having added Si and/or Mg powder etc., can suppress warpage.And if add Sn, then the resistance to water of aluminium electrode improves, and, because addition is 0.3～5.0 mass parts, be minute quantity, therefore, conductivity, film-strength and the outward appearance of aluminium electrode do not impacted fully.In addition, owing to attenuate thickness not suppresses warpage, therefore can fully obtain the BSF effect.Therefore, can obtain following used for solar batteries aluminium cream: be used for to suppress warpage under the situation of backplate, and electrical characteristics, film-strength, resistance to water and outward appearance are all excellent.
In addition, if the Sn addition is lower than 0.3 mass parts, the effect of the silicon substrate warpage that then can not fully be inhibited.On the other hand, even surpass 5.0 mass parts, reduce the warpage effect and also do not change substantially, blister and/or ball take place in a large number, and the film outward appearance significantly reduces.Therefore, the Sn amount of powder must be made as with respect to Al powder 100 mass parts is the scope of 0.3～5.0 mass parts.
Additional disclosure has been put down in writing the aluminium cream that contains the Sn powder of 5～50 mass parts with respect to Al powder 100 mass parts once in above-mentioned patent documentation 6, but as mentioned above, if add the Sn powder of the volume that surpasses 5.0 mass parts, can produce blister and/or ball in a large number.Above-mentioned patent documentation 6, be for the plating that can carry out the aluminium electrode so that can soldering lead-in wire purpose and add the Sn powder, therefore, do not consider the inhibition of warpage and film outward appearance etc. fully.
In addition, in above-mentioned patent documentation 7, put down in writing a kind of aluminium cream that has used by the aluminium powder of low-melting soldering alloy (being the Sn alloy) lining.This aluminium cream is made as the easy fired of the degree of not fusion of aluminium, suppresses the warpage of substrate, by soldering alloy aluminium powder is adhered mutually, and backplate is bonded to substrate.Therefore, promptly use this aluminium cream to form backplate, aluminium can not be diffused into silicon substrate yet, therefore can not form p
+Therefore layer can not obtain the BSF effect.Following main idea has been described: used the 1st electrode layer that does not have by the aluminium powder of soldering alloy lining by forming substrate-side setting, and on the 1st electrode layer, be provided with 2 layers of structure of the 2nd electrode layer that has used the aluminium powder that is covered by soldering alloy, can realize the BSF effect and suppress warpage, but, form 2 layers of such structure, it is miscellaneous that operation becomes, cause manufacturing cost to rise, warpage in order to suppress to form the 1st electrode layer, requirement is with its attenuate, therefore, suppress warpage and to obtain sufficient BSF effect difficult.
At this, preferred above-mentioned its average grain diameter of Sn powder is in the scope of 2～10 μ m.If the particle diameter of Sn powder is more than the 2 μ m, then be difficult to produce cohesion, therefore when modulation cream, can obtain better dispersiveness.In addition, if particle diameter is below the 10 μ m, then can obtain good dispersiveness with addition still less.Average grain diameter is more preferably 2.5～5.0 μ m.In addition, the addition of the Sn powder scope of 1.0～5.0 mass parts more preferably.
In addition, preferred: above-mentioned aluminium cream is the aluminium cream that contains the glass powder of the aluminium powder of scope of 60 mass parts～80 mass parts and the scope below 5 mass parts in whole 100 mass parts of cream.The Sn powder that in cream 100 mass parts, contains the scope of 0.21～3.5 mass parts.If aluminium powder is made as more than 60 mass parts, then the conductivity of electrode further improves, and further becomes many to the Al of substrate diffusing capacity.In addition,, then can make the vehicle amount fully many, therefore can obtain the excellent more cream of printing if aluminium powder is limited in below 80 mass parts.Glass powder is must add for the adhesion strength that improves the electrode pair substrate, but in order to obtain fully high conductivity, is preferably limited to below 5 mass parts.In addition, organic vehicle for example accounts for the remainder except above-mentioned aluminium powder, glass powder and Sn powder of cream.
In addition, preferred its average grain diameter of above-mentioned aluminium powder is in the scope of 2～9 μ m.If it is big that particle diameter becomes, the tendency of dispersed variation is then arranged, in addition, even particle diameter significantly diminishes, the cohesion that also can result from waits and produces the tendency of dispersed variation, therefore, is preferably above-mentioned particle size range.According to above-mentioned viewpoint, the average grain diameter of aluminium powder is the scope of 5～7 μ m more preferably.
In addition, above-mentioned organic vehicle is not particularly limited.For example, can use: employing terpineol and/or butyl carbitol dissolving cellulos such as (butyl carbitol) are the vehicle that the suitable resin of macromolecule, acrylic resin etc. forms.
In addition, also there is no particular limitation for glass powder.Can use various glass powders such as plumbous system, bismuth system, borosilicic acid system.But, if consider to environmental impact, the plumbous system of preferred right and wrong.In addition, the average grain diameter of glass powder for example is preferably in the scope of 1～10 μ m.
In addition, above-mentioned aluminium cream except containing above-mentioned each composition, can also suitably contain other additive in the scope that does not hinder its characteristic.As additive, for example can enumerate: in cream the plasticizer of general employed phthalic acid ester and adipate ester etc., be dispersant of representative or the like with polyvinyl and polycarboxylic acids etc.
Description of drawings
Fig. 1 is the schematic diagram of cross section structure of the solar cell of the expression formation that the aluminium cream of one embodiment of the invention is applied to backplate.
Fig. 2 is the figure of backplate of the solar cell of presentation graphs 1
Fig. 3 is the evaluation result of relation of the warpage of Sn addition and silicon substrate.
Description of reference numerals
10: solar cell; 12: silicon substrate; 14:n
+Layer; 16:p
+Layer; 18: antireflection film; 20: the sensitive surface electrode; 22: backplate; 24: sensitive surface; 26: whole electrode; 28: band electrode
Embodiment
Below, with reference to accompanying drawing, one embodiment of the invention are elaborated.In addition, in following embodiment, accompanying drawing is suitably simplified or is out of shape, and the size and dimension of each several part etc. may not accurately be described.
Fig. 1 is that the silicon of schematically having represented to use the used for solar batteries aluminium cream of one embodiment of the invention is the figure of the cross section structure of solar cell 10.In Fig. 1, solar cell 10 possesses: for example as the silicon substrate 12 of p type poly semiconductor, the n that forms respectively below thereon
+ Layer 14 and p
+The layer 16, at this n
+Antireflection film 18 that forms on the layer 14 and sensitive surface electrode 20 and at this p
+The backplate 22 that forms on the layer 16.Above-mentioned silicon substrate 12 its gauges in the scope of 100～200 μ m, for example are about 180 μ m for example, and constitute discoideus about rectangular thin plate shape about 125 * 125mm or diameter 125mm.
Above-mentioned n
+Layer 14 and p
+Layer 16 is to form the layer that the high layer of impurity concentration is provided with, the gauge of this high concentration layer, n by the top and bottom at silicon substrate 12
+ Layer 14 for example is about 70～100nm, p
+Layer 16 for example is about 500nm.n
+Layer 14 is to be about 100～200nm in the solar cell at general silicon, but in the present embodiment, than this thin thickness, constitutes the structure that is called as shallow emitter (shallow emitter).In addition, at n
+The impurity that contains in the layer 14 is n type alloy, for example is phosphorus (P), at p
+The impurity that contains in the layer 16 is p type alloy, for example is aluminium (Al).
In addition, above-mentioned antireflection film 18 is for example for comprising silicon nitride Si
3N
4Deng film, by to be provided with about about 1/4 optical thickness of for example visible wavelength, for example 80nm, can constitute below 10%, about 2% extremely low reflectivity for example.
In addition, above-mentioned sensitive surface electrode 20 for example is that the thick film conductor by the same gauge forms, and is provided with the flat shape of comb shape with thin thread part of many at roughly whole of sensitive surface 24.Above-mentioned thick film conductor is the thick film conductor that is formed by following thick film silver, described thick film silver contains in 67～98 weight % scopes, for example in the Ag about 94.3 weight % and 2～33 weight % scopes, the glass about 5.7 weight % for example.Above-mentioned glass for example is pyrex and/or lead glass.
In addition, above-mentioned backplate 22 is shown in Fig. 2 signal, by at p
+Layer is arranged to band electrode 28 and whole electrode 26 that banded thick film silver makes on 16 and is constituted, and this whole electrode 26 is except on this band electrode 28 roughly whole, and what be provided with in a part and this band electrode 28 overlapping modes is the electrode that the thick film of conductor composition constitutes with aluminium.The thick film that constitutes whole electrode 26 comprises the Sn and the glass of aluminium, trace, for example, with respect to aluminium 100 mass parts, contains the Sn about 0.3～5 mass parts, the glass about 2.9 mass parts.In addition, above-mentioned band electrode 28 is provided with for lead etc. being brazed on the backplate 22.
The solar cell 10 of present embodiment has as described above from sensitive surface 24 sides and possesses n
+Layer 14, p type silicon substrate 12, p
+The n of layer 16
+Pp
+Therefore structure, can obtain the BSF effect well.Therefore, possesses advantage with high current collecting efficiency.
Above-mentioned solar cell 10 for example can be by modulating aluminium cream as described below, and whole the electrode 26 that uses this aluminium cream to form the back side made.At first, aluminum mixture powder 100 mass parts, organic vehicle 32～40 mass parts, glass powder 2.9 mass parts, Sn powder 0.3～5.0 mass parts.If cream integral body is made as 100 weight %, then aluminium powder is 70 weight %, and glass powder is 2.0 weight %, and the Sn powder is 0.21～3.5 weight %, and vehicle is 24.5～27.79 weight %.Aluminium powder is spherical about 6 μ m for average grain diameter for example or approaches spherical powder.In addition, glass powder for example is SiO
2-B
2O
3-ZnO is a glass, and for example average grain diameter is about 5 μ m.In addition, the Sn powder is the spherical particle that is produced by water atomization, and the average grain diameter of having used as shown in table 1 is the Sn powder of 2.5～10 μ m.The sample that adopts the such composition of the mixing employing of three-roll mill for example to concoct out obtains aluminium cream.
Table 1
In addition, in above-mentioned table 1, embodiment 1～9 and comparative example 13,14 have been to use the example of Sn powder, and embodiment 10,11 is to use the Sn/Ag3/Cu0.5 alloy to replace the different embodiment of Sn powder, comparative example 12 is the examples that do not add any metal dust etc., comparative example 15 is the examples that added the Si powder, and comparative example 16 is to have added SiO
2The example of powder.The particle diameter and the addition of the metal dusts of each embodiment and comparative example etc. are as shown in table 1.In addition, comparative example the 13, the 14th is made as the addition of Sn powder respectively with respect to Al powder 100 mass parts the example of 0.1 mass parts, 8.0 mass parts.
Then, prepared that for example gauge is about 180 μ m and size is the p type silicon substrate 12 of the rectangular thin plate shape about 125 * 125mm, forming surperficial silver electrode with for example thick film silk screen print method printing respectively thereon is that sensitive surface electrode 20 and back silver electrode are band electrode 28, and implements dried.Then, use for example above-mentioned aluminium cream of thick film silk screen print method printing thereon.Plate making uses for example stainless steel 200 purpose versions, and the cream adhesion amount is made as 7mg/cm
2After the printing, carry out drying, in air atmosphere, use near infrared ray high speed firing furnace under 700～800 ℃ firing temperature, to burn till at 80 ℃.That is, silver electrode and aluminium electrode are burnt till together.Thus, form above-mentioned sensitive surface electrode 20 and backplate 22, obtained above-mentioned solar cell 10.
For the solar cell 10 that produces as described above, warpage, film-strength, resistance to water and outward appearance are estimated.Show the result in the right hurdle of table 1.Warpage is to make sensitive surface 24 sides place horizontal plane up, with following height as amount of warpage.In addition, film-strength is adhesive tape to be sticked to whole electrode 26 carry out tractive and peel off, and estimates electrode film and has or not and peels off.The situation that nothing is peeled off is designated as zero, will have situation about peeling off be designated as *.In addition, resistance to water is that whole electrode 26 is immersed in 80 ℃ the warm water, estimates whether produce bubble at face.To be designated as in the situation that has produced bubble below 2 minutes *, the situation that will produce bubble at 2～10 minutes is designated as △, will be that the situation more than 10 minutes is designated as zero up to the time of generation bubble.In addition, outward appearance is to observe the film surface, the situation that blister and/or ball have taken place is designated as * and, not have the situation of generation to be designated as zero.
As above shown in the commentary valency result, contain the Sn of the scope of 0.3～5.0 mass parts with respect to Al 100 mass parts, promptly contain the embodiment 1～9 of Sn of the scope of 0.21～3.5 mass parts in cream 100 mass parts, warpage is 1.0～1.8mm.In addition, contain the embodiment 10,11 of the Sn/Ag3/Cu0.5 of 2.0 mass parts, warpage also is limited to 1.0～1.2mm.In addition, for embodiment, no matter which, its film-strength, outward appearance are all good, and resistance to water also is that other are all good except embodiment 1 is poor slightly.
Relative therewith, do not add the comparative example 12 of Sn, warpage is 2.4mm, in addition, has added the comparative example 13 of the Sn of 0.1 mass parts, warpage is 2.2mm, all is the above big warpage of 2mm.Added the comparative example 15 of Si, warpage is this big result of 2.6mm.In addition, it is all poor not add comparative example 12 its resistances to water, the outward appearance of Sn.Added the Sn of 0.1 mass parts with respect to Al 100 mass parts, promptly contain the comparative example 13 and the comparative example 15 that has added Si of the Sn of 0.07 mass parts in cream 100 mass parts, except above-mentioned warpage was big, resistance to water was also poor slightly.Contain the Sn of 8.0 mass parts with respect to Al 100 mass parts, promptly contain the comparative example 14 of the Sn of 5.6 mass parts in cream 100 mass parts, though warpage diminishes, be 1.3mm, blister and/or ball occur in a large number, as a result degraded appearance.In addition, added SiO
2Comparative example 16, though warpage diminishes, be 1.2mm, a little less than the film-strength, resistance to water is also insufficient.
Clear and definite according to above-mentioned evaluation result: at the Sn that contains 0.3～5.0 mass parts with respect to Al 100 mass parts, promptly in cream 100 mass parts, contain under the situation of Sn of 0.21～3.5 mass parts, can make warpage is the little value that is lower than 2.0mm, and the film-strength height can obtain good surface appearance.If particularly addition being made as with respect to Al 100 mass parts is promptly to contain more than 0.7 mass parts in cream 100 mass parts more than 1.0 mass parts, then warpage can be limited in below the 1.4mm, and can fully improves resistance to water.
Fig. 3 is to be that the addition with respect to Al 100 mass parts, the ordinate of Sn or Sn alloy is under the situation of amount of warpage at abscissa, above-mentioned evaluation result is expressed as the figure of curve chart.Can see: surpassed the tendency that 0.3 mass parts promptly surpassed 0.21 mass parts cream 100 mass parts local warpage sharply diminishes with respect to Al 100 mass parts from addition, distinguished: as if being to be more than 0.7 mass parts in cream 100 mass parts promptly more than 1.0 mass parts with respect to Al 100 mass parts, then the variation of warpage is roughly stagnated.In addition, can though but see the tendency that warpage diminished when the less particle diameter of diversity ratio was big.
As described above,, in aluminium cream, contain a spot of Sn powder, therefore,, then can reduce the warpage of this silicon substrate 12 if use this cream by printing, dry and burn till at the back side of silicon substrate 12 and form whole electrode 26 according to present embodiment.And, if add Sn, the resistance to water that then comprises whole electrode 26 of aluminium improves, and, because addition is that 0.3～5.0 mass parts promptly is this few amount of 0.21～3.5 mass parts in cream 100 mass parts with respect to Al 100 mass parts, therefore, conductivity, film-strength and the outward appearance to whole electrode 26 can not impact fully.In addition, can not make the thickness attenuation and suppress warpage, therefore, can fully obtain the BSF effect.
Abovely the present invention is had been described in detail, but the present invention can also otherwise implement, can apply various changes in the scope that does not break away from its purport with reference to accompanying drawing.
Claims (2)
1. a used for solar batteries aluminium cream is the used for solar batteries aluminium cream that contains Al powder, frit and vehicle, it is characterized in that, contains the Sn powder with the ratio in the scope that is 0.3～5.0 mass parts with respect to described Al powder 100 mass parts.
2. used for solar batteries aluminium cream according to claim 1, wherein, described Sn powder average grain diameter is in the scope of 2～10 μ m.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009217944A JP2011066353A (en) | 2009-09-18 | 2009-09-18 | Aluminum paste for solar cell |
| JP217944/2009 | 2009-09-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102024506A true CN102024506A (en) | 2011-04-20 |
Family
ID=43865696
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010102873362A Pending CN102024506A (en) | 2009-09-18 | 2010-09-17 | Aluminum paste for solar cell |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2011066353A (en) |
| KR (1) | KR20110031109A (en) |
| CN (1) | CN102024506A (en) |
| TW (1) | TW201137895A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103515459A (en) * | 2012-06-26 | 2014-01-15 | 株式会社则武 | Paste composition for solar battery electrode |
| CN103959394A (en) * | 2011-12-02 | 2014-07-30 | 株式会社则武 | Solar cell and paste material using same |
| CN107486553A (en) * | 2016-06-12 | 2017-12-19 | 苏州铜宝锐新材料有限公司 | Aluminium cream and its application |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013162024A1 (en) * | 2012-04-26 | 2013-10-31 | 京セラ株式会社 | Solar cell element and method for producing same |
| CN102881351B (en) * | 2012-09-26 | 2014-10-01 | 湖南红太阳光电科技有限公司 | Back tin electrode slurry for crystalline silicon photovoltaic cells and method for preparing back tin electrode slurry |
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| JP2007273760A (en) * | 2006-03-31 | 2007-10-18 | Kyocera Corp | Photoelectric conversion element, conductive paste therefor, and method of manufacturing same |
| WO2008047580A1 (en) * | 2006-09-28 | 2008-04-24 | Kyocera Corporation | Solar battery element and method for manufacturing the same |
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| US20090056798A1 (en) * | 2007-08-29 | 2009-03-05 | Ferro Corporation | Thick Film Pastes For Fire Through Applications In Solar Cells |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06105792B2 (en) * | 1983-12-28 | 1994-12-21 | 株式会社日立製作所 | Solar cell manufacturing method |
-
2009
- 2009-09-18 JP JP2009217944A patent/JP2011066353A/en active Pending
-
2010
- 2010-08-13 TW TW99127104A patent/TW201137895A/en unknown
- 2010-09-14 KR KR1020100089963A patent/KR20110031109A/en not_active Application Discontinuation
- 2010-09-17 CN CN2010102873362A patent/CN102024506A/en active Pending
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|---|---|---|---|---|
| JP2007273760A (en) * | 2006-03-31 | 2007-10-18 | Kyocera Corp | Photoelectric conversion element, conductive paste therefor, and method of manufacturing same |
| WO2008047580A1 (en) * | 2006-09-28 | 2008-04-24 | Kyocera Corporation | Solar battery element and method for manufacturing the same |
| WO2009009512A1 (en) * | 2007-07-09 | 2009-01-15 | Ferro Corporation | Solar cell contacts containing aluminum and at least one of boron, titanium, nickel, tin, silver, gallium, zinc, indium and copper |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103959394A (en) * | 2011-12-02 | 2014-07-30 | 株式会社则武 | Solar cell and paste material using same |
| CN103515459A (en) * | 2012-06-26 | 2014-01-15 | 株式会社则武 | Paste composition for solar battery electrode |
| CN107486553A (en) * | 2016-06-12 | 2017-12-19 | 苏州铜宝锐新材料有限公司 | Aluminium cream and its application |
| CN107486553B (en) * | 2016-06-12 | 2019-08-02 | 苏州铜宝锐新材料有限公司 | Aluminium cream and its application |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201137895A (en) | 2011-11-01 |
| JP2011066353A (en) | 2011-03-31 |
| KR20110031109A (en) | 2011-03-24 |
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