CN102021633A - Preparation method of graphene thin film field emission material - Google Patents
Preparation method of graphene thin film field emission material Download PDFInfo
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- CN102021633A CN102021633A CN2009101872976A CN200910187297A CN102021633A CN 102021633 A CN102021633 A CN 102021633A CN 2009101872976 A CN2009101872976 A CN 2009101872976A CN 200910187297 A CN200910187297 A CN 200910187297A CN 102021633 A CN102021633 A CN 102021633A
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D13/00—Electrophoretic coating characterised by the process
- C25D13/02—Electrophoretic coating characterised by the process with inorganic material
Abstract
The invention relates to the field of field emission electronic materials, in particular to a preparation method of a graphene thin film field emission material. The method comprises the following steps of: (1) uniformly dispersing graphene and metal cation inorganic salt capable of providing charges into an low polar organic solvent or directly dispersing the graphene into an aqueous solution of an ionic surfactant by adopting an ultrasonic method to prepare a stable graphene solution with charges; and (2) orderly depositing the graphene with the charges on a conductive substrate under the action of an external electric field by utilizing an electrophoretic deposition method to prepare a graphene film. The field emission material of the invention is an even and compact graphene film rich in graphene sheets perpendicularly to the plane. The method has the advantages of simple operation, low cost and good controllability and is suitable for preparing large-area graphene films, and the excellent field emission characteristics of the graphene film lay the foundation for applying the graphene film as a cold cathode material to high-performance field emission displays, and the like.
Description
Technical field:
The present invention relates to field emission electron material field, a kind of preparation method of graphene film field emmision material is provided especially.
Background technology:
The tradition field electron emission materials is generally molybdenum, tungsten, silicon etc., and its critical emission threshold value is low to be 30～50V/ μ m, and the poor chemical stability of electrode materials, require Working environment must reach～10
-8The ultrahigh vacuum(HHV) of Pa, the manufacturing cost height.Along with the continuous development of high-tech areas such as telecommunications, urgent day by day to the demand of field emmision material with premium properties.
CNT (carbon nano-tube) has big length-to-diameter ratio, low work function, and good electrical conductivity and nano level tip, and therefore can be under relatively low voltage long-time emitting electrons is a kind of good field emission material by generally acknowledging.In the past in the time more than 10 years, the various countries scientist has carried out big quantity research to the application of CNT (carbon nano-tube) emission on the scene aspect, all successfully develop nano carbon pipe field-emission display as many companies such as her thermoelectron of Japan and Korea S Samsung, greatly promoted the application of nano material aspect field emission.Graphene is the newcomer of carbon material family, it is meant the monolayer carbon atom of tightly packed one-tenth bi-dimensional cellular shape crystalline network, have and similar structure of CNT (carbon nano-tube) and performance characteristics, as big dimensional thickness ratio, excellent conductive characteristic, thermal conduction characteristic and mechanical property, Graphene is a kind of ideal electron field emission materials in theory.In addition, Graphene also has abundant flourishing marginal texture, may have the more excellent electron emission characteristic of ratio nano carbon pipe.Yet the preparation method's of a large amount of technologies of preparing of single-layer graphene and big area uniform field emtting cathode shortage has seriously hindered the application of Graphene aspect field emission.
Summary of the invention:
The invention provides a kind of preparation method of graphene film field emmision material, this field emmision material is even compact, by being rich in the graphene film of forming perpendicular to the Graphene lamella on surface, prepare by electrophoretic deposition method, it has low unlatching electric field and threshold value, big excellent field emission characteristic such as field enhancement factor, good field emission stability and homogeneity, is expected to be used for as cold-cathode material aspects such as high-performance Field Emission Display.
Technical scheme of the present invention is:
The invention provides a kind of preparation method of graphene film field emmision material, this graphene film is obtained by electrophoretic deposition method, and its technical process is: have the electrophoretic deposition of homodisperse → Graphene of the Graphene of electric charge, specific as follows:
(1) have the homodisperse of the Graphene of electric charge:
The employing ultrasonic method is with Graphene and can provide the metallic cation inorganic salt of electric charge to be dispersed in according to a certain percentage in the lower organic solvent of polarity, or Graphene directly is dispersed in the aqueous solution of ionogenic surfactant, prepare uniform and stable charged Graphene solution.
The lateral dimension of Graphene is 50nm～100 μ m, and the number of plies is 1～3 layer, and (thickness is about 0.8～2.3nm), and specific conductivity is 10～1 * 10
4S/cm.
In order to disperse Graphene, the dispersion agent that is adopted well is the lower organic solvent of polarity or the aqueous solution that contains ionogenic surfactant.
The organic solvent that polarity is lower comprises: water, Virahol (IPA), tetrahydrofuran (THF) (THF), dimethyl formamide (DMF), acetone or alcohol etc.The metallic cation inorganic salt comprise Mg (NO
3)
2, MgCl
2, MgSO
4Or NiCl
2Etc. inorganic soluble salt.Graphene and the weight ratio of positively charged ion inorganic salt in solution are 0.1～10, and preferable range is 0.5～2.
Ionogenic surfactant comprises: anionic alkyl-sulphate, alkylsulfonate, alkylbenzene sulfonate, cationic quaternary ammonium salt or tetraalkyl amine salt etc.Wherein, the anionic alkyl-sulphate can be sodium lauryl sulphate (SDS) etc., the anionic alkylsulfonate can be sodium laurylsulfonate (SDS) etc., the anionic alkylbenzene sulfonate can be Sodium dodecylbenzene sulfonate (SDBS) etc., cationic quaternary ammonium salt can be cetyl trimethylammonium bromide (CTAB) etc., and the tetraalkyl amine salt can be tetramethylphosphonihydroxide hydroxide base amine, hydroxide tetraethyl-amine, hydroxide tetrapropyl amine, tetrabutylphosphoniuhydroxide hydroxide amine or bromination tetraalkyl amine etc.
Ultrasonic power is 10～1500W, and ultrasonic time is 10min～10h, is preferably 30min～2h.Graphene concentration is 0.01～10mgmL
-1, be preferably 0.1～1mgmL
-1
(2) electrophoretic deposition of Graphene:
Under the extra electric field effect, utilize electrophoretic deposition that charged Graphene is deposited on the electrically-conductive backing plate in order, prepare graphene film.Use electrically-conductive backing plate or have the positive and negative electrode of the substrate of conductive layer as electrophoretic deposition, electrically-conductive backing plate or the substrate that has a conductive layer comprise metal (polishing) thin plates such as conductive glass, stainless steel plate, titanium, aluminium or nickel that are coated with indium tin oxide (ITO) coating, or are coated with the insulated substrate of metallic coatings such as titanium, aluminium, nickel, gold or silver or carbon fiber paper etc.The distance of positive and negative electrode substrate is 0.1mm～10cm, and preferable range is 0.5～2cm; The electrophoretic deposition applied voltage is 5～500V, and preferable range is 50～200V; The electrophoretic deposition time is 1s～30min, is preferably 10s～5min.
Among the present invention, be coated with the conductive glass of indium tin oxide (ITO) coating, be called for short the ITO conductive glass.Wherein, indium tin oxide (ITO) coating is with 90%In by mass ratio
2O
3And 10%SnO
2After the mixing, it is on glass to adopt the magnetron sputtering mode to be covered in, and coat-thickness is 20～200 μ m.
Among the present invention, the graphene film thickness of acquisition is 10nm～100 μ m, and the graphene film that adopts electrophoretic deposition method to obtain has excellent field emission characteristic: in room temperature and 10
-5Under the vacuum condition of Pa, open electric field and threshold value 0.5～4V μ m respectively
-1With 2～6V μ m
-1, enhancement factor is 3000～6000, at 11.46mAcm
-2Initial current density following 12 hours decay to 0.1%～8%.
Characteristics of the present invention and beneficial effect are:
1, in order to realize the application in Graphene emission on the scene field, the present invention proposes electrophoretic deposition method and prepares surperficial even compact, is rich in the graphene film perpendicular to the Graphene lamella on surface, that this method has is simple to operate, cost is low, controllability good, be easy to characteristics such as amplification, is suitable for preparing large-area graphene film.
2, the present invention's graphene film of adopting electrophoretic deposition method to obtain has excellent field emission characteristic: in room temperature and 10
-5Under the vacuum condition of Pa, open electric field and threshold value 0.5～4V μ m respectively
-1With 2～6V μ m
-1, enhancement factor is 3000～6000, at 11.46mAcm
-2Initial current density following 12 hours decay to 0.1%～8%.Therefore, graphene film field emmision material of the present invention is expected to be used for aspects such as high-performance Field Emission Display will being used as cold-cathode material.
Description of drawings:
Fig. 1 is (a) atomic force microscope photo of the Graphene of chemical peeling preparation and (b) transmission electron microscope photo.
Fig. 2 is used for the Mg that contains of electrophoretic deposition for (a)
2+Graphene aqueous isopropanol (the 0.2mgmL of positive charge
-1); (b) electrophoretic deposition prepares the device synoptic diagram of graphene film, wherein: 1, stainless steel plate; 2, Graphene solution; 3, ito glass; 4, plastic containers; (c, d) stereoscan photograph that is deposited on the graphene film on the conductive glass that is coated with the ITO coating of electrophoretic deposition preparation; (e, f) the atomic force microscope photo of the graphene film of electrophoretic deposition preparation.
Fig. 3 is the field emission performance of the graphene film of electrophoretic deposition preparation: (a) the electronic field emission current density (J) of graphene film and Graphene powder coating is with the change curve of electric field (E); (b) the F-N curve of Dui Ying graphene film and Graphene powder coating; (c) the field emission stability curve of graphene film under the different steady electric field intensity.Illustration is that size is～1 * 1cm
2Graphene film be 3.8V μ m at electric field
-1The time emission pattern.
Embodiment:
Be described in further detail the present invention below by embodiment and accompanying drawing.
Device is as accompanying drawing 2b, and stainless steel plate 1 links to each other with positive source, and ito glass 3 links to each other with power cathode, and Graphene solution 2 places polymethyl methacrylate (PMMA) plastic containers 4, and stainless steel plate 1 and ito glass 3 insert respectively in the Graphene solution 2.
The lateral dimension that adopts the chemical peeling preparation is that 500nm～1 μ m, the number of plies are 1～3 layer (thickness is about 0.8～2.3nm), specific conductivity is 1 * 10
3The Graphene of S/cm is a raw material, with Graphene and Mg (NO
3)
2Joined in the low polar organic solvent Virahol (IPA) by weight 1: 1, the concentration of Graphene is 0.1mgmL
-1, room temperature ultra-sonic dispersion 1h obtains even, stable graphene suspension; With the polishing stainless steel plate is positive pole (5cm * 2cm * 2mm), cladding thickness is that (2cm * 1cm * 2mm) is negative pole for the conductive glass of indium tin oxide (ITO) coating of 100 μ m, the distance of positive and negative electrode is 5mm, operating voltage is 160V, the electrophoretic deposition time is 1min, prepares the graphene film that thickness is about 0.5 μ m; (1cm * 1cm * 2mm) test at the spherical storehouse of ultrahigh vacuum(HHV) field emission performance test macro as cold-cathode material, vacuum tightness is 10 with the electrophoretic deposition film
-5Pa, anode are that diameter is 1mm cylindrical (iron) needle point, and the positive and negative electrode distance remains on 100 μ m.
Test result shows that the unlatching electric field of graphene film field emmision material and threshold value are respectively 2.3V μ m
-1With 5.2V μ m
-1, enhancement factor is～3700, at 11.46mAcm
-2Following 12 hours the decaying to of initial current density～4%.
Device is as accompanying drawing 2b.
The lateral dimension that adopts the chemical peeling preparation is that 500nm～1 μ m, the number of plies are 1～3 layer (thickness is about 0.8～2.3nm), specific conductivity is 1 * 10
3The Graphene of S/cm is a raw material, with Graphene and Mg (NO
3)
2Joined in the low polar organic solvent Virahol (IPA) by weight 2: 1, the concentration of Graphene is 0.2mgmL
-1, room temperature ultra-sonic dispersion 2h obtains even, stable graphene suspension; With the polishing stainless steel plate is positive pole (5cm * 2cm * 2mm), cladding thickness is that (2cm * 1cm * 2mm) is negative pole for the conductive glass of indium tin oxide (ITO) coating of 120 μ m, the distance of positive and negative electrode is 10mm, operating voltage is 150V, the electrophoretic deposition time is 2min, prepares the graphene film that thickness is about 1 μ m; (1cm * 1cm * 2mm) test at the spherical storehouse of ultrahigh vacuum(HHV) field emission performance test macro as cold-cathode material, vacuum tightness is 10 with the electrophoretic deposition film
-6Pa, anode are that diameter is 1mm cylindrical (iron) needle point, and the positive and negative electrode distance remains on 50 μ m.
Test result shows that the unlatching electric field of graphene film field emmision material and threshold value are respectively 1.2V μ m
-1With 3.3V μ m
-1, enhancement factor is～4000, at 12mAcm
-2Following 12 hours the decaying to of initial current density～2%.
Device is as accompanying drawing 2b.
The lateral dimension that adopts the chemical peeling preparation is that 500nm～1 μ m, the number of plies are 1～3 layer (thickness is about 0.8～2.3nm), specific conductivity is 1 * 10
3The Graphene of S/cm is a raw material, with Graphene and MgCl
2Joined in the low polar organic solvent dimethyl formamide (DMF) by weight 1: 1, the concentration of Graphene is 0.1mgmL
-1, room temperature ultra-sonic dispersion 1h obtains even, stable graphene suspension; With the polishing stainless steel plate is positive pole (5cm * 2cm * 2mm), cladding thickness is that (2cm * 1cm * 2mm) is negative pole for the conductive glass of indium tin oxide (ITO) coating of 200 μ m, the distance of positive and negative electrode is 5mm, operating voltage is 100V, the electrophoretic deposition time is 2min, prepares the graphene film that thickness is about 0.5 μ m; (1cm * 1cm * 2mm) test at the spherical storehouse of ultrahigh vacuum(HHV) field emission performance test macro as cold-cathode material, vacuum tightness is 10 with the electrophoretic deposition film
-6Pa, anode are that diameter is 1mm cylindrical (iron) needle point, and the positive and negative electrode distance remains on 100 μ m.
Test result shows that the unlatching electric field and the threshold value of graphene film field emmision material is respectively～2.0V μ m
-1With～5.1V μ m
-1, enhancement factor is～3800, at 12mAcm
-2Following 12 hours the decaying to of initial current density～4%.
Device is as accompanying drawing 2b.
The lateral dimension that adopts the preparation of hydrogen electric arc expansion cleavage method is that 500nm～1 μ m, the number of plies are 1～3 layer (thickness is about 0.7～2.0nm), specific conductivity is 2 * 10
3The Graphene of S/cm is a raw material, with Graphene and Mg (NO
3)
2Joined in the low polar organic solvent Virahol (IPA) by weight 1: 1, the concentration of Graphene is 0.1mgmL
-1, room temperature ultra-sonic dispersion 1h obtains even, stable graphene suspension; With the polishing stainless steel plate is positive pole (5cm * 2cm * 2mm), cladding thickness is that (2cm * 1cm * 2mm) is negative pole for the conductive glass of indium tin oxide (ITO) coating of 150 μ m, the distance of positive and negative electrode is 10mm, operating voltage is 200V, the electrophoretic deposition time is 1min, prepares the graphene film that thickness is about 0.5 μ m; (1cm * 1cm * 2mm) test at the spherical storehouse of ultrahigh vacuum(HHV) field emission performance test macro as cold-cathode material, vacuum tightness is 10 with the electrophoretic deposition film
-5Pa, anode are that diameter is 1mm cylindrical (iron) needle point, and the positive and negative electrode distance remains on 50 μ m.
Test result shows that the unlatching electric field and the threshold value of graphene film field emmision material is respectively～0.8V μ m
-1With～2.2V μ m
-1, enhancement factor is～4200, at 12mAcm
-2Following 12 hours the decaying to of initial current density～1%.
Device is as accompanying drawing 2b.
The lateral dimension that adopts the chemical peeling preparation is that 3 μ m～5 μ m, the number of plies are 1～3 layer (thickness is about 0.8～2.3nm), specific conductivity is 1 * 10
3The Graphene of S/cm is a raw material, with Graphene and Mg (NO
3)
2Joined in the low polar organic solvent Virahol (IPA) by weight 1: 1, the concentration of Graphene is 0.1mgmL
-1, room temperature ultra-sonic dispersion 1h obtains even, stable graphene suspension; With the polishing stainless steel plate is positive pole (5cm * 2cm * 2mm), cladding thickness is that (2cm * 1cm * 2mm) is negative pole for the conductive glass of indium tin oxide (ITO) coating of 150 μ m, the distance of positive and negative electrode is 5mm, operating voltage is 160V, the electrophoretic deposition time is 1min, prepares the graphene film that thickness is about 0.5 μ m; (1cm * 1cm * 2mm) test at the spherical storehouse of ultrahigh vacuum(HHV) field emission performance test macro as cold-cathode material, vacuum tightness is 10 with the electrophoretic deposition film
-5Pa, anode are that diameter is 1mm cylindrical (iron) needle point, and the positive and negative electrode distance remains on 100 μ m.
Test result shows that the unlatching electric field and the threshold value of graphene film field emmision material is respectively～1.0V μ m
-1With～2.5V μ m
-1, enhancement factor is～5000, at 12mAcm
-2Following 12 hours the decaying to of initial current density～6%.
Device is as accompanying drawing 2b.
The lateral dimension that adopts the chemical peeling preparation is that 500nm～1 μ m, the number of plies are 1～3 layer (thickness is about 0.8～2.3nm), specific conductivity is 1 * 10
3The Graphene of S/cm is a raw material, Graphene is added in the SDS aqueous solution of 1% (weight ratio), and the concentration of Graphene is 0.5mgmL
-1, room temperature ultra-sonic dispersion 1h obtains even, stable graphene suspension; With the polishing stainless steel plate be negative pole (5cm * 2cm * 2mm), (2cm * 1cm * 2mm) is anodal to another stainless steel substrates, and the distance of positive and negative electrode is 5mm, and operating voltage is 300V, and the electrophoretic deposition time is 1min, prepares the graphene film that thickness is about 2 μ m; (1cm * 1cm * 2mm) test at the spherical storehouse of ultrahigh vacuum(HHV) field emission performance test macro as cold-cathode material, vacuum tightness is 10 with the electrophoretic deposition film
-5Pa, anode are that diameter is 1mm cylindrical (iron) needle point, and the positive and negative electrode distance remains on 50 μ m.
Test result shows that the unlatching electric field of graphene film field emmision material and threshold value are respectively 2.4V μ m
-1With 5.5V μ m
-1, enhancement factor is～3700, at 12mAcm
-2Following 12 hours the decaying to of initial current density～4%.
As shown in Figure 1, from (a) atomic force microscope photo of the Graphene of chemical peeling preparation and (b) the transmission electron microscope photo as can be seen, the Graphene surface that the present invention adopts is regular, quality is better.
As shown in Figure 2, the Mg that contains that is used for electrophoretic deposition from (a)
2+Graphene aqueous isopropanol (the 0.2mgmL of positive charge
-1) as can be seen, charged Graphene can be realized well disperseing in aqueous isopropanol, for next step electrophoretic deposition provides prerequisite; The device synoptic diagram for preparing graphite film from (b) electrophoretic deposition as can be seen, electrophoretic deposition method equipment is simple, easy handling, cost is low, and is easy to by the size and the depositing operation that change depositing electrode the gained graphene film be regulated and control; From (c, d) stereoscan photograph and the (e of the graphite film on the conductive glass that is deposited on the ITO coating of electrophoretic deposition preparation, f) the atomic force microscope photo of the graphite film of electrophoretic deposition preparation as can be seen, the graphene film surface even compact that adopts electrophoretic deposition method to prepare, and be rich in Graphene lamella, guaranteed effective launching site perpendicular to the surface.
As shown in Figure 3, from the electronic field emission current density (J) of (a) graphene film and Graphene powder coating with the change curve of electric field (E) as can be seen, graphene film shows unlatching electric field (the 2.3V μ m lower than Graphene powder coating
-1) and lower threshold value (5.2V μ m
-1); From the F-N curve of (b) corresponding graphene film and Graphene powder coating as can be seen, 1n (J/E
2) linear with 1/E, illustrating that graphene film and Graphene powder coating all follow the field emission principle, its electric field enhancement factor can reach respectively～and 3700 and～800; Under (c) different steady electric field intensity the field emission stability curve of graphene film as can be seen, graphene film has good field emission stability, at 2.23mAcm
-2Following 12 hours of initial current density without any decay, at 6.36mAcm
-2And 11.46mAcm
-2The following 12 hours decay of initial current density be respectively～2% and～4%; From size is～1 * 1cm
2Graphene film be 3.8V μ m at electric field
-1Emission pattern under the condition as can be seen, graphene film has good field transmitting uniformity.The above results explanation, the graphene film of electrophoretic deposition method preparation is a kind of ideal field emmision material, is expected to be used for aspects such as high-performance Field Emission Display will being used as cold-cathode material.
Claims (8)
1. the preparation method of a graphene film field emmision material is characterized in that, concrete preparation process is as follows:
(1) has the preparation of the Graphene solution of electric charge
The employing ultrasonic method is with Graphene and can provide the metallic cation inorganic salt of electric charge to be dispersed in the lower organic solvent of polarity; Perhaps, Graphene directly is dispersed in the aqueous solution of ionogenic surfactant, prepares uniform and stable charged Graphene solution;
(2) electrophoretic deposition prepares graphene film
Under the extra electric field effect, the Graphene that utilizes electrophoretic deposition method will have electric charge is deposited on the electrically-conductive backing plate in order, prepares graphene film.
2. according to the preparation method of the described graphene film field emmision material of claim 1, it is characterized in that, in the described step (1), the lateral dimension of the Graphene that adopts is 50nm～100 μ m, the number of plies is 1～3 layer, and thickness is 0.8～2.3nm, and specific conductivity is 10～1 * 10
4S/cm.
3. according to the preparation method of the described graphene film field emmision material of claim 1, it is characterized in that in the described step (1), the organic solvent that polarity is lower is: water, Virahol, tetrahydrofuran (THF), dimethyl formamide, acetone or alcohol; The metallic cation inorganic salt are Mg (NO
3)
2, MgCl
2, MgSO
4Or NiCl
2Wherein, Graphene and the weight ratio of positively charged ion inorganic salt in solution are 0.1～10.
4. according to the preparation method of the described graphene film field emmision material of claim 1, it is characterized in that, in the described step (1), ionogenic surfactant is: anionic alkyl-sulphate, alkylsulfonate, alkylbenzene sulfonate, cationic quaternary ammonium salt or tetraalkyl amine salt.
5. according to the preparation method of the described graphene film field emmision material of claim 1, it is characterized in that in the described step (1), ultrasonic power is 10～1500W, ultrasonic time is 10min～10h, and Graphene concentration is 0.01～10mgmL
-1
6. according to the preparation method of the described graphene film field emmision material of claim 1, it is characterized in that, in the described step (2), use electrically-conductive backing plate or have the positive and negative electrode of the substrate of conductive layer as electrophoretic deposition, electrically-conductive backing plate or the substrate that has a conductive layer are the metal sheets such as conductive glass, stainless steel plate, titanium, aluminium or nickel that are coated with the indium tin oxide coating; Perhaps for being coated with the insulated substrate or the carbon fiber paper of titanium, aluminium, nickel, gold or silver coating.
7. according to the preparation method of the described graphene film field emmision material of claim 1, it is characterized in that in the described step (2), the distance of the positive and negative electrode substrate of electrophoretic deposition is 0.1mm～10cm, the electrophoretic deposition applied voltage is 5～500V, and the electrophoretic deposition time is 1s～30min.
8. according to the preparation method of the described graphene film field emmision material of claim 1, it is characterized in that the graphene film that adopts electrophoretic deposition method to obtain has excellent field emission characteristic: in room temperature and 10
-5Under the vacuum condition of Pa, open electric field and threshold value and be respectively 0.5～4V μ m
-1With 2～6V μ m
-1, enhancement factor is 3000～6000, at 11.46mAcm
-2Initial current density following 12 hours decay to 0.1%～8%.
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