CN102006017B - Biasing circuit and power amplifier circuit thereof - Google Patents
Biasing circuit and power amplifier circuit thereof Download PDFInfo
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- CN102006017B CN102006017B CN 201010570407 CN201010570407A CN102006017B CN 102006017 B CN102006017 B CN 102006017B CN 201010570407 CN201010570407 CN 201010570407 CN 201010570407 A CN201010570407 A CN 201010570407A CN 102006017 B CN102006017 B CN 102006017B
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Abstract
The invention discloses a biasing circuit. The biasing circuit comprises an input end, an output end, a second transistor, a first resistor, a second resistor and a digital adjustable resistor, wherein the digital adjustable resistor and the second resistor are orderly connected between the input end and the collector of the second transistor in series; the first resistor is connected between the output end and the base of the transistor in series; the second resistor and the intermediate node of the digital adjustable resistor are connected with the base of the second transistor; the emitter of the second transistor is connected with the ground; and the biasing circuit is connected with a bias voltage through the input end and provides bias for the power amplifier through the output end.
Description
[technical field]
The present invention relates to the IC design field, especially relate to a kind of biasing circuit and its power amplification circuit.
[background technology]
In IC (Integrated Circuit) design, designing an outstanding dc bias circuit (DC Bias Circuit) is a very arduous job, especially for designing complicated circuit such as power amplifier designs.This is because some circuit performance height depend on the dc bias circuit control precision, such as power output and the power added efficiency of power amplifier.
In radio frequency (Radio Frequency, RF)/microwave integrated circuit, there are two factors may cause the variation of dc offset voltage.One is the model accuracy that uses in simulation software, and another is the process deviation that is caused by the semiconductor manufacturing.For Designing power amplifier goes out an outstanding dc bias circuit, not only need to do a large amount of simulation work, also need to do a large amount of work that trims.
For the problems referred to above, three kinds of solutions are arranged at present.
1, improve the model accuracy of active device and passive device, need to do a lot of enquiry based works in order to realize this purpose.
2, trim in design, this will expend a large amount of time, and need the engineer to do extensive work in the laboratory.Usually, need to come adjusting resistance to mate whole circuit requirements by laser trimming device (Laser Trimmer).In order to satisfy laser trimming device needs, also need the engineer to do a large amount of design works, such as the many dissimilar patterns of design.
3, come adjusted design by the self adaptation metal level in manufacture process.Although this method can improve output, this program itself can increase a lot of production costs, and this program is also very consuming time.
Therefore, wish that a kind of improved biasing circuit of proposition and power amplification circuit overcome the problems referred to above.
[summary of the invention]
One of purpose of the present invention is to provide a kind of biasing circuit that can address the above problem.
Two of purpose of the present invention provides a kind of power amplification circuit that can address the above problem.
In order to address the above problem, according to an aspect of the present invention, the invention provides a kind of biasing circuit, it comprises: input, output, transistor seconds, the first resistance, the second resistance and solid relay.Described solid relay and described the second resistance are connected between the collector electrode of described input and transistor seconds successively, described the first resistance string is coupled between the base stage of described output and transistor seconds, the intermediate node of described the second resistance and described solid relay is connected with the base stage of transistor seconds, and the emitter of described transistor seconds is connected to the ground.Wherein said biasing circuit connects bias voltage by input, provides biasing by output for power amplifier.
Further, described solid relay comprises some resistance units and some switch elements, the series connection by the control of the conducting of described switch element or cut-off being selected part or all of resistance unit or and connect to form described solid relay.
Further, the control signal of each switch element is respectively from a memory circuit, realizes adjustment to the resistance of described solid relay by the programming to memory circuit.
Further, described resistance unit is N, is designated as respectively R31, R32, R3N, wherein arranges: R32=2
2-1* R31, R33=2
3-1* R31, R3N=2
N-1* R31, wherein N is natural number.
According to another aspect of the present invention, the invention provides a kind of power amplification circuit, it comprises: power amplifier and the biasing circuit of biasing is provided for power amplifier.Described biasing circuit comprises: input, output, transistor seconds, the first resistance, the second resistance and solid relay.Described solid relay and described the second resistance are connected between the collector electrode of described input and transistor seconds successively, described the first resistance string is coupled between the base stage of described output and transistor seconds, the intermediate node of described the second resistance and described solid relay is connected with the base stage of transistor seconds, and the emitter of described transistor seconds is connected to the ground.Wherein said biasing circuit connects bias voltage by input, provides biasing by output for power amplifier.
Further, described power amplification circuit also includes: input and output capacitors, and an end of described input capacitance connects the base stage of described power amplifier, other end input radio frequency input signal; One end of described output capacitance connects the collector electrode of described power amplifier, other end output radio frequency amplifying signal.
According to a further aspect of the invention, the invention provides a kind of biasing circuit, it includes solid relay.Described solid relay comprises some resistance units and some switch elements, the series connection by the control of the conducting of described switch element or cut-off being selected part or all of resistance unit or and connect to form described solid relay.
Further, the control signal of each switch element is respectively from a memory circuit, realizes adjustment to the resistance of described solid relay by the programming to memory circuit.
Further, described resistance unit is N, is designated as respectively R31, R32, R3N, wherein arranges: R32=2
2-1* R31, R33=2
3-1* R31, R3N=2
N-1* R31, wherein N is natural number.
Compared with prior art, replaced with digital resistance in biasing circuit in the present invention and trim resistance, thereby made the design of biasing circuit more simple, performance is more accurately controlled.
About other purposes of the present invention, feature and advantage are described in detail in embodiment below in conjunction with accompanying drawing.
[description of drawings]
In conjunction with reference to accompanying drawing and ensuing detailed description, the present invention will be more readily understood, structure member corresponding to same Reference numeral wherein, wherein:
Fig. 1 shows the circuit diagram that can be used for cellular power amplification circuit in the present invention;
Fig. 2 A is an example of the adjustable resistance in biasing circuit in Fig. 1;
Fig. 2 B is another example of the adjustable resistance in biasing circuit in Fig. 1;
Fig. 2 C is another example of the adjustable resistance in biasing circuit in Fig. 1.
[embodiment]
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the present invention is further detailed explanation below in conjunction with the drawings and specific embodiments.
Detailed description of the present invention mainly presents by program, step, logical block, process or other symbolistic descriptions, the running of the technical scheme in its direct or indirect simulation the present invention.Affiliated those of skill in the art use herein these descriptions and statement effectively to introduce their work essence to the others skilled in the art in affiliated field.
Alleged " embodiment " or " embodiment " refer to that special characteristic, structure or the characteristic relevant to described embodiment can be contained at least one implementation of the present invention at least herein.Different local in this manual " in one embodiment " that occur also nonessentially all refer to same embodiment, must not be yet with other embodiment mutually exclusive separately or select embodiment.In addition, the sequence of modules in method, flow chart or the functional block diagram of the one or more embodiment of expression also revocablely refers to any particular order, also is not construed as limiting the invention.
Fig. 1 shows the circuit diagram that can be used for cellular power amplification circuit 100 in the present invention.Described power amplification circuit 100 comprises power amplifier Q1, the input capacitance Cin that is connected with the base stage of power amplifier Q1, the output capacitance Cout that is connected with the collector electrode of power amplifier Q1 and the biasing circuit 110 that biasing is provided for power amplifier Q1.
The other end P1 of described input capacitance Cin can input the RF input signal, and the other end P2 of described output capacitance Cout can export the RF output signal of amplifying via power amplifier Q1.Collector electrode P3 and the power Vcc of power amplifier Q1 are electrical connected, its grounded emitter.Described power amplifier Q1 can amplify the RF output signal that is amplified to the RF input signal.
Described biasing circuit 110 has the input P2 that connects bias voltage Vbais, and it provides biasing according to described bias voltage Vbais to the base stage of described power amplifier Q1.Described biasing circuit 110 comprises transistor Q2, resistance R 1, resistance R 2 and solid relay R3.Described solid relay R3 and described resistance R 2 are connected between input P2 and transistorized collector electrode successively, described resistance R 1 is series between the base stage of the base stage of power amplifier Q1 and transistor Q2, the intermediate node of described resistance R 2 and solid relay R3 is connected with the base stage of transistor Q2, the grounded emitter of described transistor Q2.
In order to make described biasing circuit 110 provide biasing more accurately to power amplifier Q1, can trim accurately to the resistance R 3 in described biasing circuit 110 to mate wanting of whole circuit.Be all generally that the mode that adopts laser trimming or self adaptation metal level to trim is adjusted to trimming of the resistance in bigoted circuit in the prior art, as mentioning in background, aforesaid way all has very large shortcoming or limitation.In the present invention, described resistance R 3 adopts solid relay, can accurately control by software programming the size of described resistance R 3, like this can be so that the design of biasing circuit 110 be more simple, performance is more accurately controlled, also can reduce the requirement of 110 pairs of manufacturing process of described biasing circuit simultaneously.
Described solid relay can comprise some resistance units and some switch elements, and the number of resistance unit and switch element can design according to requirement of engineering, for the RF dc bias circuit, common 3 or 4 just much of that.Conducting by each switch element or the combination of cut-off can be selected the serial or parallel connection of part or all of resistance unit and and then form final solid relay.Therefore, can realize adjustment to the resistance of described solid relay by the control to the conducting of described switch element or cut-off.The control signal of each switch element is respectively from a memory circuit (not shown).Can realize programming to memory circuit by software, thereby can control conducting or the cut-off of each switch element, and then realize the adjustment to the resistance of described solid relay.Like this, will become extremely simple to trimming of resistance R 3, and can carry out trimming repeatedly.
Fig. 2 A shows the example of the solid relay R3 in biasing circuit 110 in Fig. 1, wherein said solid relay R3 comprises three resistance unit R31, R32, R33 and four switch element SW1, SW2, SW3, SW4, carry out the resistance adjustment by controlling described switch element, such as switch element SW1 and all conductings of SW2, the cut-off of rest switch unit, R31 is because short circuit is skipped like this, R3=R32+R33; Switch element SW1, SW2, SW3 conducting for another example, the cut-off of rest switch unit, R31, R32 be because short circuit is skipped like this, R3=R33.
Fig. 2 B shows another example of the solid relay R3 in biasing circuit 110 in Fig. 1, and wherein the difference of the example shown in this example and Fig. 2 A is: the number of switch element and arrangement mode, it is identical that resistance is adjusted mode.
Fig. 2 C shows another example of the solid relay R3 in biasing circuit 110 in Fig. 1.As shown in the figure, described solid relay R3 comprise mutual series connection N resistance unit R31, R32, R3N and with N N switch element SW31, SW32, the SW3N that resistance unit is corresponding.In one embodiment, can arrange: R32=2
2-1* R31, R33=2
3-1* R31 ..., R3N=2
N-1* R31 can obtain the Standard resistance range from 0 to (2 of solid relay R3 like this
N-1) Standard resistance range of * R31, wherein N is natural number.In one embodiment, the resistance of N resistance can be consistent, such as being 10 ohm, also can be set to as required various resistances, such as being respectively 20 ohm, 25 ohm and 30 ohm etc.
Fig. 2 A, Fig. 2 B and Fig. 2 C are only exemplary three examples that provided, and can design various solid relays according to same or similar principle.
The structure that it is pointed out that the biasing circuit 110 in the present invention also can adopt the biasing circuit of other types, as long as this biasing circuit can provide biasing for power amplifier Q1.All biasing circuits all can run into the problem that trims of resistance usually when design, adopt the solid relay in the present invention can make the design of various biasing circuits more simple, and performance is more accurately controlled.
The implication that is connected or connects in the present invention not only comprises directly joins or connects, also comprises indirectly being connected or connecting, such as via connected after a resistance, functional circuit.
Above the present invention has been carried out enough detailed description with certain particularity.Under those of ordinary skill in the field should be appreciated that, the description in embodiment is only exemplary, make under the prerequisite that does not depart from true spirit of the present invention and scope change and all should belong to protection scope of the present invention.The present invention's scope required for protection is limited by described claims, rather than limited by the foregoing description in embodiment.
Claims (5)
1. biasing circuit, it is characterized in that: it comprises: input, output, transistor seconds, the first resistance, the second resistance and solid relay,
Described solid relay and described the second resistance are connected between the collector electrode of described input and transistor seconds successively, described the first resistance string is coupled between the base stage of described output and transistor seconds, the intermediate node of described the second resistance and described solid relay is connected with the base stage of transistor seconds, the emitter of described transistor seconds is connected to the ground
Wherein said biasing circuit connects bias voltage by input, provides biasing by output for power amplifier,
Described solid relay comprises some resistance units and some switch elements, by selecting the serial or parallel connection of part or all of resistance unit to form described solid relay to the conducting of described switch element or the control of cut-off.
2. biasing circuit according to claim 1, is characterized in that, the control signal of each switch element is respectively from a memory circuit, realizes adjustment to the resistance of described solid relay by the programming to memory circuit.
3. biasing circuit according to claim 1, is characterized in that, described resistance unit is N, is designated as respectively R31, R32, R3N, wherein arranges: R32=2
2-1* R31, R33=2
3-1* R31, R3N=2
N-1* R31, wherein N is natural number.
4. power amplification circuit, it is characterized in that: it comprises: power amplifier and as arbitrary in the claims 1 to 3 described biasing circuit of biasing is provided for power amplifier.
5. power amplification circuit according to claim 4, is characterized in that, it also includes: input and output capacitors,
One end of described input capacitance connects the base stage of described power amplifier, other end input radio frequency input signal; One end of described output capacitance connects the collector electrode of described power amplifier, other end output radio frequency amplifying signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010570407 CN102006017B (en) | 2010-12-02 | 2010-12-02 | Biasing circuit and power amplifier circuit thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010570407 CN102006017B (en) | 2010-12-02 | 2010-12-02 | Biasing circuit and power amplifier circuit thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102006017A CN102006017A (en) | 2011-04-06 |
| CN102006017B true CN102006017B (en) | 2013-11-06 |
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| CN 201010570407 Active CN102006017B (en) | 2010-12-02 | 2010-12-02 | Biasing circuit and power amplifier circuit thereof |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016192590A (en) * | 2015-03-30 | 2016-11-10 | 株式会社村田製作所 | Power amplification module |
| CN107276151B (en) * | 2017-06-14 | 2019-09-13 | 南京中感微电子有限公司 | One kind trimming circuit and battery protection chip |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6333677B1 (en) * | 2000-10-10 | 2001-12-25 | Rf Micro Devices, Inc. | Linear power amplifier bias circuit |
| US6492874B1 (en) * | 2001-07-30 | 2002-12-10 | Motorola, Inc. | Active bias circuit |
| CN2599747Y (en) * | 2002-12-03 | 2004-01-14 | 比亚迪股份有限公司 | Resistance regulating device in integrated circuit |
| CN101394152B (en) * | 2007-09-20 | 2010-08-11 | 锐迪科科技有限公司 | Radio frequency power amplifier circuit |
| CN201869171U (en) * | 2010-12-02 | 2011-06-15 | 无锡中普微电子有限公司 | Biasing circuit and power amplifying circuit |
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