CN102005436A - Measurement calibrating wafer - Google Patents
Measurement calibrating wafer Download PDFInfo
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- CN102005436A CN102005436A CN200910194947XA CN200910194947A CN102005436A CN 102005436 A CN102005436 A CN 102005436A CN 200910194947X A CN200910194947X A CN 200910194947XA CN 200910194947 A CN200910194947 A CN 200910194947A CN 102005436 A CN102005436 A CN 102005436A
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Abstract
The invention discloses a measurement calibrating wafer, which comprises a wafer body, wherein multiple calibrating units are ranked on the wafer body; each calibrating unit is provided with a rectangular region and positioning regions distributed at the quadrangle of the rectangular regions and used for positioning the rectangular regions; each rectangular region is provided with two adjacent first calibrating slots in parallel to the set direction; the depths and the widths of the two adjacent first calibrating slots are the same; the depth is used for carrying out the measurement and the calibration under the scene for measuring the height of a step; the gap between the two adjacent first calibrating slots and the width of any first calibrating slot are used for carrying out the measurement and the calibration under the scene for measuring the key dimension; and the set direction is the long side direction or the wide side direction of the rectangular regions. The measurement calibrating wafer greatly enhances the convenience degree for using a standard wafer and reduces the use cost of the standard wafer, and the measurement and the calibration for various dimensions under multiple measuring scenes are realized by utilizing a monolithic wafer.
Description
Technical field
The present invention relates to integrated circuit processing and manufacturing technology, be specifically related to the weights and measures calibration wafer.
Background technology
Along with the fast development of integrated circuit processing and manufacturing technology, circuit level is more and more higher and circuit size is more and more littler, thereby becomes more and more higher for the required precision of integrated circuit processing.It is evident that, when the size of integrated circuit bigger---when being of a size of tens microns such as the live width of gate circuit, adding the mismachining tolerance that man-hour occurs tens nanometers can't produce appreciable impact to the gate circuit service behaviour that finally obtains; And when the live width size of gate circuit narrowed down to several microns or hundreds of nanometer, the mismachining tolerance of tens nanometers just may produce fatal influence to final circuit performance.
In integrated circuit processing and manufacturing field, the height of mismachining tolerance is an important indicator weighing wafer (wafer) processing and production technology, higher mismachining tolerance can seriously reduce the yields of wafer production line and the service behaviour of the integrated circuit that final processing obtains, therefore the control of the precision of processing technology is the problem that each wafer processing and manufacturing manufacturer puts forth effort to study always, the prerequisite of precision control and basis then at first are the accurate measurement to the wafer processing dimension---promptly, use non-type scale that target to be measured is measured, then resulting measurement result is not possess any reference value.
The method of guaranteeing the dimensional measurement accuracy that generally adopts is by the weights and measures calibration wafer each measurement links in the wafer course of processing to be calibrated at present, the operation principle of weights and measures calibration wafer is: before the size that the processing to wafer obtains is measured, measure having standard-sized weights and measures calibration wafer earlier, thereby dimensional measurement equipment just can be at first carries out standardization to self weights and measures and eliminates the systematic error that self exists like this, utilize dimensional measurement equipment each phase size that processing obtains to wafer again after the described standardization to measure then, just can guarantee the accuracy and the reliability of measurement result, thereby for further by technology upgrading or other means are controlled by mismachining tolerance and improvement provides good basis.
Present widely used weights and measures calibration wafer, type according to its applied measurement scene roughly can be divided three classes: be used for critical size (Critical Dimension, CD) calibrator of measuring process, be used for the calibrator of deposition film thickness measure process and be used for boss height (Step Height, SH) calibrator of measuring process.Described various weights and measures calibration wafer all is that the technological standards on standard-sized wafer, by being better than its wafer production line that will calibrate and the precision instrument processing and manufacturing of required precision are come out.
Because the size and the requirement of wafer production line are had nothing in common with each other, at present normally at every kind of measurement requirement, the special calibration wafer of difference processing and manufacturing; Simultaneously, also there is multiple size at present in wafer itself, for example 200 millimeters, 300 millimeters of diameters or 450 millimeters etc., and current also is at every kind of wafer size, respectively the described calibration wafer of processing and manufacturing on corresponding wafer.Above-mentioned two kinds of situations make up mutually, will produce the very huge calibration wafer kind of quantity, such as: the calibration wafer that uses in the wire width measuring process of 200 millimeters wafer, the SiO of 200 millimeters wafer
2The calibration wafer that uses in the measured film thickness process, the calibration wafer that uses in the boss height measuring process of 300 millimeters wafer, even, can also further be subdivided into calibration wafer that uses in the 100 nanometer boss height measuring processes of the calibration wafer that uses in the 50 nanometer boss height measuring processes of 200 millimeters wafer or 200 millimeters wafer or the like.
Obviously, complexity and diversified day by day along with the integrated circuit processing technology, the existing this method that processes corresponding weights and measures calibration wafer for each measurement scene on the wafer of correspondence size will cause the rapid expansion of calibration wafer quantity, and calibration wafer itself all is to need to use the accurate more special processing and manufacturing of process equipment, single cost is very high, and correspondingly the use cost of this special-purpose calibration wafer is also just very expensive; In addition, because the processing dimension that obtains after needing continually each step to be finished in the wfaer course of processing is measured to guarantee that it meets the technological standards of setting, therefore adopt different calibration wafers just to calibrate respectively to different size and need change calibrator continually, not only waste time and energy, also occur misoperation easily.
Summary of the invention
The embodiment of the invention provides a kind of weights and measures calibration wafer, can support to utilize monolithic wafer that a plurality of sizes under the multiple measurement scene are measured calibration.
For achieving the above object, technical scheme of the present invention specifically is achieved in that
A kind of weights and measures calibration wafer comprises the wafer body, is arranged with some alignment units on the described wafer body, and each alignment unit has a rectangular area and is distributed in the four jiaos of locating areas locating and be used to locate this rectangular area in this rectangular area;
In each rectangular area, have two adjacent first meter calibration tankes that are parallel to its direction initialization, the degree of depth of two adjacent first meter calibration tankes is all identical with width, and the described degree of depth is in order to measure calibration under the measurement scene of shoulder height; The spacing between two adjacent first meter calibration tankes and the width of arbitrary first meter calibration tank are in order to measure calibration under the measurement scene of critical size; Described direction initialization is the long side direction or the broadside of this rectangular area.
Described alignment unit further in each rectangular area, has two adjacent second meter calibration tankes perpendicular to its direction initialization; And two adjacent second meter calibration tankes are all identical with the degree of depth and the width of two adjacent first meter calibration tankes, and the spacing between two adjacent second meter calibration tankes is also identical with spacing between two adjacent first meter calibration tankes.
Further be arranged with corresponding one by one with each alignment unit and identical backup alignment unit on the described wafer body,
The backup alignment unit that described alignment unit is corresponding with it is symmetrically distributed about diameter wafer.
Described wafer body comprises Silicon Wafer, have the wafer of silica membrane or have the wafer of silicon nitride film; The thickness of described silica membrane or silicon nitride film is in order to measure calibration under the measurement scene of film thickness.
As seen from the above technical solutions, the weights and measures calibration wafer of the embodiment of the invention, focus in the same zone by the size type that will need under the multiple measurement scene to measure and to measure, and on a wafer, process the alignment unit that to calibrate different size, realized utilizing single-wafer that a plurality of sizes under the multiple measurement scene are measured calibration, improve the convenience degree that calibration wafer uses greatly, reduced the use cost of calibration wafer.
Description of drawings
Fig. 1 is the composition structural representation of embodiment of the invention vacuum metrics weighing apparatus calibration wafer.
Fig. 2 is the structural representation of alignment unit in the embodiment of the invention.
Fig. 3 is that the rectangular area in the alignment unit reaches the wherein generalized section of first meter calibration tank in the embodiment of the invention.
Fig. 4 is the schematic diagram of a kind of calibration wafer of reality in the embodiment of the invention.
Embodiment
For making purpose of the present invention, technical scheme and advantage clearer, below with reference to the accompanying drawing embodiment that develops simultaneously, the present invention is described in more detail.
The embodiment of the invention provides a kind of weights and measures calibration wafer, and it forms structure as shown in Figure 1, comprises wafer body 110, is arranged with some alignment units 120 on the described wafer body 110;
Wherein, the structure of alignment unit as shown in Figure 2, described alignment unit has a rectangular area 201 and is distributed in place, 201 4 jiaos of this rectangular areas and is used to locate the locating areas 202 of this rectangular area 201;
In each rectangular area 201, have two adjacent first meter calibration tankes 203 that are parallel to its long limit (or broadside) direction, the section signal of described rectangular area 201 and first meter calibration tank 203 wherein as shown in Figure 3, wherein, the degree of depth of described two adjacent first meter calibration tankes 203 is all identical with width, and the described degree of depth is in order to measure calibration under the measurement scene of SH; The spacing between two adjacent first meter calibration tankes 203 and the width of arbitrary first meter calibration tank 203 then are used for measuring calibration under the measurement scene of CD.
Understand easily, described calibrating installation is being added man-hour, distance by between the degree of depth, width and adjacent two grooves that change groove can obtain the different calibrating installation of a plurality of sizes easily on a wafer, thereby this wafer can be applicable to the measurement calibration of multiple size.
Preferably, it is convenient more for calibration wafer is used, described alignment unit, further in each rectangular area 201, have two adjacent second meter calibration tankes 204 vertical with first meter calibration tank 203, as shown in Figure 2, at this moment, if first meter calibration tank 203 is parallel to the long side direction of rectangular area 201, then second meter calibration tank 204 is parallel to the broadside of rectangular area 201; Otherwise if first meter calibration tank 203 is parallel to the broadside of rectangular area 201, then second meter calibration tank 204 just is parallel to the long side direction of rectangular area 201.Described two adjacent first meter calibration tankes 203 are all identical with the degree of depth and the width of two adjacent second meter calibration tankes 204, and the spacing between two adjacent first meter calibration tankes 203 is also identical with spacing between two adjacent second meter calibration tankes 204.
Then at this moment, the degree of depth of arbitrary second meter calibration tank 204 can be used for the measurement scene of SH is measured calibration equally, and the spacing between two adjacent second meter calibration tankes 204 and the width of arbitrary second meter calibration tank 204 then can be used for the measurement scene of CD is measured calibration.
Understand easily, in order to guarantee the accuracy of the size of calibrator own, the material of making calibrator all needs to have good chemical inertness and stability, with guarantee its use for a long time or the preservation process in the phenomenon that causes self size to change such as eremacausis etc. can not take place.Therefore, the described wafer body of the embodiment of the invention can be for Silicon Wafer, have silicon dioxide (SiO
2) film or have silicon nitride (Si
xN
y) wafer of film, wherein x, y depend on the difference of concrete processing technology and difference, such as ideally being Si
3N
4Described three kinds of wafers can both better meet described requirement to the calibrator manufactured materials.
Preferably, for the wafer body for having SiO
2Film or Si
xN
yThe wafer of film, described SiO
2Film or Si
xN
yThe thickness of film can also be used for the measurement scene of film thickness is measured calibration.Similarly, by changing the SiO in the rectangular area
2Film or Si
xN
yThe thickness of film can obtain the different alignment unit of a plurality of film thicknesses, thereby multiple film thickness is measured calibration on the wafer body.Obtain the method for the film of multiple thickness as for processing on single-wafer, can be by various existing processing technologys---realize such as appointed area in the wafer being carried out film growth or thin film deposition mode etc., because concrete grammar and the present invention do not have direct relation, so locate to launch no longer in detail to introduce.
At last, the alignment unit that situations such as contingent damage or accident cause in the use lost efficacy, can also on described wafer body, further be provided with and the identical backup alignment unit of each alignment unit, use for the ease of reality, its corresponding backup alignment unit of each alignment unit can be symmetrically distributed about diameter wafer on the wafer body.
Because described first meter calibration tank and described second meter calibration tank are identical dimensionally, and the backup alignment unit that alignment unit is corresponding with it is also identical, so hereinafter for convenience of description, no longer carry out strictness and distinguish, only it is referred to as meter calibration tank and alignment unit respectively.
A kind of possible calibration wafer that comprises each alignment unit, its structural representation is established in this example as shown in Figure 4, and described calibration wafer is one deck SiO that grown
2The wafer of film and diameter wafer are 300 millimeters, if be positioned at the alignment unit that is in the diameter wafer left side shown in the dotted line among Fig. 4, the symmetric position place then be the backup alignment unit of this alignment unit correspondence, with an alignment unit and backup alignment unit thereof is one group, comprise 6 groups altogether among then described Fig. 4, numbering is respectively G1～G6, in the rectangular area of each alignment unit, the size of the spacing between the degree of depth of adjacent two meter calibration tankes and adjacent two meter calibration tankes is as shown in table 1 below, and the unit of each size is nanometer in the table:
| Alignment unit (or backup alignment unit) numbering | G1 | G2 | G3 | G4 | G5 | G6 |
| SH | 50 | 100 | 100 | 200 | 400 | 675 |
| CD | 25 | 45 | 70 | 110 | 160 | 250 |
| Film thickness | 50 | 100 | 100 | 200 | 400 | 675 |
Table 1
By table 1 as seen, in 300 millimeters wafer fabrication processes, every measurement scene that belongs to listed size in the table 1 can use this calibration wafer to measure calibration.
Certainly, need to prove, cited size in calibration wafer shown in Figure 4 and the table 1, all be giving an example of carrying out for the embodiment of the invention is described, do not represent to limit, in actual applications, each integrated circuit processing and manufacturing merchant can meet the calibration wafer of oneself requirement fully according to the needs design of wafer processing of oneself.
By as seen above-mentioned, the weights and measures calibration wafer that the embodiment of the invention provides, focus in the same zone by the size type that will need under the multiple measurement scene to measure and to measure, and on a wafer, process the alignment unit that to calibrate different size, realized utilizing single-wafer that a plurality of sizes under the multiple measurement scene are measured calibration, improve the convenience degree that calibration wafer uses greatly, reduced the use cost of calibration wafer.
Therefore; understand easily, the above is preferred embodiment of the present invention only, is not to be used to limit spirit of the present invention and protection range; equivalent variations that any those of ordinary skill in the art made or replacement all should be considered as being encompassed within protection scope of the present invention.
Claims (4)
1. a weights and measures calibration wafer comprises the wafer body, it is characterized in that:
Be arranged with some alignment units on the described wafer body, each alignment unit has a rectangular area and is distributed in the four jiaos of locating areas locating and be used to locate this rectangular area in this rectangular area;
In each rectangular area, have two adjacent first meter calibration tankes that are parallel to its direction initialization, the degree of depth of two adjacent first meter calibration tankes is all identical with width, and the described degree of depth is in order to measure calibration under the measurement scene of shoulder height; The spacing between two adjacent first meter calibration tankes and the width of arbitrary first meter calibration tank are in order to measure calibration under the measurement scene of critical size; Described direction initialization is the long side direction or the broadside of this rectangular area.
2. calibration wafer according to claim 1 is characterized in that:
Described alignment unit further in each rectangular area, has two adjacent second meter calibration tankes perpendicular to its direction initialization; And two adjacent second meter calibration tankes are all identical with the degree of depth and the width of two adjacent first meter calibration tankes, and the spacing between two adjacent second meter calibration tankes is also identical with spacing between two adjacent first meter calibration tankes.
3. calibration wafer according to claim 2 is characterized in that, further is arranged with corresponding one by one with each alignment unit and identical backup alignment unit on the described wafer body,
The backup alignment unit that described alignment unit is corresponding with it is symmetrically distributed about diameter wafer.
4. according to claim 1,2 or 3 described calibration wafers, it is characterized in that described wafer body comprises Silicon Wafer, have the wafer of silica membrane or have the wafer of silicon nitride film; The thickness of described silica membrane or silicon nitride film is in order to measure calibration under the measurement scene of film thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910194947XA CN102005436B (en) | 2009-09-01 | 2009-09-01 | Measurement calibrating wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910194947XA CN102005436B (en) | 2009-09-01 | 2009-09-01 | Measurement calibrating wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102005436A true CN102005436A (en) | 2011-04-06 |
| CN102005436B CN102005436B (en) | 2012-02-08 |
Family
ID=43812675
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910194947XA Expired - Fee Related CN102005436B (en) | 2009-09-01 | 2009-09-01 | Measurement calibrating wafer |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103633001A (en) * | 2012-08-27 | 2014-03-12 | 中芯国际集成电路制造(上海)有限公司 | Method for calibrating silicon wafer position in CVD reaction cavity |
| CN104716125A (en) * | 2013-12-17 | 2015-06-17 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor film thickness measurement calibration standard sheet and manufacturing method thereof |
| CN112985330A (en) * | 2021-02-07 | 2021-06-18 | 西安交通大学 | Preparation method of wafer-level film thickness standard sheet for online instrument calibration |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6742168B1 (en) * | 2002-03-19 | 2004-05-25 | Advanced Micro Devices, Inc. | Method and structure for calibrating scatterometry-based metrology tool used to measure dimensions of features on a semiconductor device |
| US6914337B2 (en) * | 2003-11-04 | 2005-07-05 | Taiwan Semiconductor Manufacturing Co., Ltd | Calibration wafer and kit |
-
2009
- 2009-09-01 CN CN200910194947XA patent/CN102005436B/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103633001A (en) * | 2012-08-27 | 2014-03-12 | 中芯国际集成电路制造(上海)有限公司 | Method for calibrating silicon wafer position in CVD reaction cavity |
| CN103633001B (en) * | 2012-08-27 | 2016-09-21 | 中芯国际集成电路制造(上海)有限公司 | A kind of for the method at CVD reaction cavity alignment position of silicon wafer |
| CN104716125A (en) * | 2013-12-17 | 2015-06-17 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor film thickness measurement calibration standard sheet and manufacturing method thereof |
| CN104716125B (en) * | 2013-12-17 | 2018-11-02 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor film thickness measuring calibrates standard film and its manufacturing method |
| CN112985330A (en) * | 2021-02-07 | 2021-06-18 | 西安交通大学 | Preparation method of wafer-level film thickness standard sheet for online instrument calibration |
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| Publication number | Publication date |
|---|---|
| CN102005436B (en) | 2012-02-08 |
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