CN101996930A - 制造接触接合垫的方法及半导体器件 - Google Patents
制造接触接合垫的方法及半导体器件 Download PDFInfo
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- CN101996930A CN101996930A CN2009100567181A CN200910056718A CN101996930A CN 101996930 A CN101996930 A CN 101996930A CN 2009100567181 A CN2009100567181 A CN 2009100567181A CN 200910056718 A CN200910056718 A CN 200910056718A CN 101996930 A CN101996930 A CN 101996930A
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- 238000000034 method Methods 0.000 title claims abstract description 96
- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000012212 insulator Substances 0.000 claims abstract description 20
- 230000008569 process Effects 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 13
- 238000000151 deposition Methods 0.000 claims abstract description 10
- 238000012856 packing Methods 0.000 claims abstract description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 74
- 229920005591 polysilicon Polymers 0.000 claims description 64
- 238000005498 polishing Methods 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 239000002210 silicon-based material Substances 0.000 claims description 7
- 238000011065 in-situ storage Methods 0.000 claims description 6
- 239000002002 slurry Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- 239000005383 fluoride glass Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 238000002955 isolation Methods 0.000 abstract description 4
- 238000012986 modification Methods 0.000 description 41
- 230000004048 modification Effects 0.000 description 41
- 238000005516 engineering process Methods 0.000 description 20
- 150000004767 nitrides Chemical class 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 230000008901 benefit Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- PICXIOQBANWBIZ-UHFFFAOYSA-N zinc;1-oxidopyridine-2-thione Chemical class [Zn+2].[O-]N1C=CC=CC1=S.[O-]N1C=CC=CC1=S PICXIOQBANWBIZ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
- H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/485—Bit line contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/488—Word lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (18)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200910056718.1A CN101996930B (zh) | 2009-08-20 | 2009-08-20 | 制造接触接合垫的方法及半导体器件 |
US12/704,511 US8318556B2 (en) | 2009-08-20 | 2010-02-11 | Method and system for continuous line-type landing polysilicon contact (LPC) structures |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200910056718.1A CN101996930B (zh) | 2009-08-20 | 2009-08-20 | 制造接触接合垫的方法及半导体器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101996930A true CN101996930A (zh) | 2011-03-30 |
CN101996930B CN101996930B (zh) | 2013-11-06 |
Family
ID=43604624
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200910056718.1A Expired - Fee Related CN101996930B (zh) | 2009-08-20 | 2009-08-20 | 制造接触接合垫的方法及半导体器件 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8318556B2 (zh) |
CN (1) | CN101996930B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109326596A (zh) * | 2017-08-01 | 2019-02-12 | 联华电子股份有限公司 | 具有电容连接垫的半导体结构与电容连接垫的制作方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101933044B1 (ko) | 2012-03-30 | 2018-12-28 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
KR20220003870A (ko) | 2020-07-02 | 2022-01-11 | 삼성전자주식회사 | 반도체 메모리 장치 및 그 제조 방법 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101504945A (zh) * | 2008-02-04 | 2009-08-12 | 联华电子股份有限公司 | 集成电路芯片 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5258096A (en) | 1992-08-20 | 1993-11-02 | Micron Semiconductor, Inc. | Method of forming local etch stop landing pads for simultaneous, self-aligned dry etching of contact vias with various depths |
KR100541049B1 (ko) | 2003-07-03 | 2006-01-11 | 삼성전자주식회사 | 디램 셀들을 갖는 반도체 장치 및 그 제조방법 |
WO2006035503A1 (ja) * | 2004-09-29 | 2006-04-06 | Spansion Llc | 半導体装置および半導体装置の製造方法 |
-
2009
- 2009-08-20 CN CN200910056718.1A patent/CN101996930B/zh not_active Expired - Fee Related
-
2010
- 2010-02-11 US US12/704,511 patent/US8318556B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101504945A (zh) * | 2008-02-04 | 2009-08-12 | 联华电子股份有限公司 | 集成电路芯片 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109326596A (zh) * | 2017-08-01 | 2019-02-12 | 联华电子股份有限公司 | 具有电容连接垫的半导体结构与电容连接垫的制作方法 |
CN109326596B (zh) * | 2017-08-01 | 2022-05-03 | 联华电子股份有限公司 | 具有电容连接垫的半导体结构与电容连接垫的制作方法 |
Also Published As
Publication number | Publication date |
---|---|
US20110042732A1 (en) | 2011-02-24 |
US8318556B2 (en) | 2012-11-27 |
CN101996930B (zh) | 2013-11-06 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20121107 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20121107 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131106 Termination date: 20200820 |