CN101995301B - Temperature detection circuit of integrated circuit and calibration method thereof - Google Patents

Temperature detection circuit of integrated circuit and calibration method thereof Download PDF

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CN101995301B
CN101995301B CN2009100577696A CN200910057769A CN101995301B CN 101995301 B CN101995301 B CN 101995301B CN 2009100577696 A CN2009100577696 A CN 2009100577696A CN 200910057769 A CN200910057769 A CN 200910057769A CN 101995301 B CN101995301 B CN 101995301B
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temperature
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low
resistance string
calibration
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CN101995301A (en
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唐成伟
王梓
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Shanghai Hua Hong NEC Electronics Co Ltd
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Abstract

The invention discloses a temperature detection circuit of an integrated circuit, which is characterized in that a resistor string connected with a PTC (positive temperature coefficient) current source is provided with a safe high-temperature resistor-string tap, a safe low-temperature resistor-string tap, a calibrating high-temperature resistor-string tap, a calibrating low-temperature resistor-string tap and a selective switch circuit; when needs to calibrate the temperature detection circuit of the integrated circuit, the calibration method comprises the following steps: controlling the calibrating high-temperature resistor-string tap to connect with a negative input end of a high-temperature comparator and controlling the calibrating low-temperature resistor-string tap to connect with a positive input end of a low-temperature comparator by external selective switch controlled signals; determining a calibrating high-temperature trimming value at a calibrating high-temperature, and determining a calibrating low-temperature trimming value at a calibrating low-temperature; averaging the calibrating high-temperature trimming value and the calibrating low-temperature trimming value, and taking the obtained average value as the trimming value of a trimmer resistor r, thereby realizing the calibration on the temperature detection circuit of the integrated circuit. The temperature detection circuit of the integrated circuit has the advantages of convenient calibration.

Description

Integrated circuit temperature sensing circuit and calibration steps thereof
Technical field
The present invention relates to semiconductor technology, particularly a kind of integrated circuit temperature sensing circuit and calibration steps thereof.
Background technology
In order to guarantee that integrated circuit is operated under the safe temperature, need to detect the temperature in the integrated circuit,, the temperature in the integrated circuit provides alerting signal when exceeding the safe temperature scope.For this reason, need temperature sensing circuit be set in integrated circuit usually, principle is as shown in Figure 1; Comprise a positive temperature coefficient (PTC) current source, a resistance string R2, a negative temperature coefficient potential circuit; Two comparers, said positive temperature coefficient (PTC) current source meets a resistance string R2, on said resistance string, is provided with tap of safe high temperature resistance string and the tap of safe low-temperature resistance string; One of said two comparer are as the low temperature comparer; One as the high temperature comparer, the said negative temperature coefficient potential circuit of said high temperature comparer positive input termination output terminal, and negative input end connects the tap of safe high temperature resistance string; Said low temperature comparer negative input end connects said negative temperature coefficient potential circuit output terminal, the tap of positive input termination safety low-temperature resistance string; Under design point; When the temperature in the integrated circuit is safe high temperature; Voltage Vptath in the tap of safe high temperature resistance string equals the voltage Vbe of said negative temperature coefficient potential circuit output terminal; When the temperature in the integrated circuit is lower than safe high temperature; Voltage Vptath in the tap of safe high temperature resistance string is lower than the voltage Vbe of said negative temperature coefficient potential circuit output terminal, and when the temperature in the integrated circuit was higher than safe high temperature, the voltage Vptath in the tap of safe high temperature resistance string was higher than the voltage Vbe of said negative temperature coefficient potential circuit output terminal; Said high temperature comparer output this moment high temperature alarm signal; When the temperature in the integrated circuit was safe low temperature, the voltage Vptatl in the tap of safe low-temperature resistance string equaled the voltage Vbe of said negative temperature coefficient potential circuit output terminal, when the temperature in the integrated circuit is higher than safe low temperature; Voltage Vptatl in the tap of safe low-temperature resistance string is higher than the voltage Vbe of said negative temperature coefficient potential circuit output terminal; When the temperature in the integrated circuit was lower than safe low temperature, the voltage Vptatl in the tap of safe low-temperature resistance string was lower than the voltage Vbe of said negative temperature coefficient potential circuit output terminal, said low temperature comparer output this moment low-temperature warning signal.
But, inevitably can bring the offset error of temperature sensing circuit detected temperatures, accurately detected temperatures owing to receive the influence of process deviation; Need calibrate it; For this reason, serial connection one semifixed resistor r between said resistance string R2 is with ground, said integrated circuit temperature sensing circuit can be through changing external fine setting control signal fine setting (trimming) value; Change the resistance of said semifixed resistor r, to calibrate.Calibration Method is under safety high-pressure temperature and safe low pressure temperature; Through changing external fine setting control signal fine setting (trimming) value; Check whether said two comparers output has logic level change; Thereby confirm that a suitable fine setting (trimming) is worth, the resistance of said semifixed resistor r is finely tuned, realize the calibration of temperature sensing circuit.But such calibration has two problems: the one, and the temperature that detect is low often to reach-40 ℃ safe low pressure temperature or up to 120 ℃ of safety high-pressure temperature etc.; Such temperature to be on board, tested and very big difficulty can be brought; Even possibly not test, the 2nd, if a plurality of detected temperatures are arranged, must under each temperature, test; Bring very big workload, increased testing cost.
One common integrated circuit temperature sensing circuit is as shown in Figure 2; Integrated circuit temperature sensing circuit among Fig. 2; Comprise metal-oxide-semiconductor proportional current mirror, operational amplifier A 1, PNP pipe Q1, the 2nd PNP pipe Q2, the 3rd PNP pipe Q3, first resistance R 1, resistance string R2, semifixed resistor r, two comparers; Said MOS proportional current mirror comprises the PMOS first metal-oxide-semiconductor MP1, the PMOS second metal-oxide-semiconductor MP2, PMOS the 3rd metal-oxide-semiconductor MP3, PMOS the 4th metal-oxide-semiconductor MP4; Wherein the breadth length ratio example of the first metal-oxide-semiconductor MP1, the second metal-oxide-semiconductor MP2, the 3rd metal-oxide-semiconductor MP3, the 4th metal-oxide-semiconductor MP4 is 1: 1: k: 1, and k is a proportionality constant, their source electrode all connects voltage source; Their grid all connects together and connects said operational amplifier output terminal; The drain electrode of the first metal-oxide-semiconductor MP1 connects an end of said operational amplifier A 1 positive input terminal and first resistance R 1, the emitter of another termination the one PNP pipe Q1 of first resistance R 1, and the drain electrode of the second metal-oxide-semiconductor MP2 connects the emitter of said operational amplifier A 1 negative input end and the 2nd PNP pipe Q2; Base stage, the grounded collector of the one PNP pipe Q1 and the 2nd PNP pipe Q2; The drain electrode of PMOS the 3rd metal-oxide-semiconductor MP3 connects said resistance string R2 one end, said semifixed resistor r one end of another termination of said resistance string R2, said semifixed resistor r other end ground connection; The drain electrode output positive temperature coefficient (PTC) electric current of said PMOS the 3rd metal-oxide-semiconductor MP3; PMOS the 4th metal-oxide-semiconductor MP4 drain electrode connects the 3rd PNP pipe Q3 emitter, base stage and the grounded collector of the 3rd PNP pipe Q3, the negative temperature coefficient voltage Vbe of the about 0.7V of emitter output of said the 3rd PNP pipe Q3.Said integrated circuit temperature sensing circuit, the external fine setting control signal of ability changes the resistance that fine setting control signal trim values can change said semifixed resistor r.Said resistance string R2 is provided with tap of safe high temperature resistance string and the tap of safe low-temperature resistance string; One of said two comparer are as the low temperature comparer; One said high temperature comparer negative input end connects the safe high temperature resistance string tap of said resistance string R2 as the high temperature comparer, the emitter of said the 3rd PNP pipe of positive input termination Q3; The safe low-temperature resistance string tap of the said resistance string R2 of said low temperature comparer positive input termination, negative input end connect the emitter of said the 3rd PNP pipe Q3.
Summary of the invention
The technical matters that the present invention will solve provides a kind of integrated circuit temperature sensing circuit and calibration steps thereof, and it calibrates convenient.
For solving the problems of the technologies described above, a kind of integrated circuit temperature sensing circuit of the present invention comprises a positive temperature coefficient (PTC) current source, a resistance string, a semifixed resistor, a negative temperature coefficient potential circuit, a selected on-off circuit, low temperature comparer and high temperature comparer;
Said positive temperature coefficient (PTC) current source connects said resistance string one end; Said semifixed resistor one end of another termination of said resistance string; Said semifixed resistor other end ground connection; On said resistance string, be provided with the tap of safe high temperature resistance string, the tap of safe low-temperature resistance string, the tap of calibration high temperature resistance string, the tap of calibration low-temperature resistance string; The resistance that said semifixed resistor end is arrived in the tap of safe high temperature resistance string arrives the resistance of said semifixed resistor end less than calibrating the tap of high temperature resistance string less than the tap of safety low-temperature resistance string to the resistance of said semifixed resistor end less than the tap of calibration low-temperature resistance string to the resistance of said semifixed resistor end; The tap of said safe high temperature resistance string, the tap of calibration high temperature resistance string connect said high temperature comparer negative input end through said selected on-off circuit; The tap of said safe low-temperature resistance string, the tap of calibration low-temperature resistance string connect said low temperature comparer positive input terminal through said selected on-off circuit, said negative temperature coefficient potential circuit output termination said high temperature comparer positive input terminal and low temperature comparer negative input end;
Said integrated circuit temperature sensing circuit, the external fine setting control signal of ability changes the resistance that external fine setting control signal trim values can change said semifixed resistor,
Said integrated circuit temperature sensing circuit; The external SS control signal of ability; Can control said selected on-off circuit through external SS control signal and connect said high temperature comparer negative input end and calibration high temperature resistance string tap and be connected said low temperature comparer positive input terminal and the tap of calibration low-temperature resistance string, perhaps control said selected on-off circuit and connect said high temperature comparer negative input end with the tap of safe high temperature resistance string and be connected said low temperature comparer positive input terminal and the tap of safe low-temperature resistance string.
Under design point; When the temperature in the integrated circuit is safe high temperature; Voltage in the tap of safe high temperature resistance string equals the voltage of said negative temperature coefficient potential circuit output terminal, and when the temperature in the integrated circuit was safe low temperature, the voltage in the tap of safe low-temperature resistance string equaled the voltage of said negative temperature coefficient potential circuit output terminal; When the temperature in the integrated circuit is calibration high temperature; Voltage in the tap of calibration high temperature resistance string equals the voltage of said negative temperature coefficient potential circuit output terminal, and when the temperature in the integrated circuit was calibration low temperature, the voltage in the tap of calibration low-temperature resistance string equaled the voltage of said negative temperature coefficient potential circuit output terminal.
The present invention also provides a kind of calibration steps of said integrated circuit temperature sensing circuit, calibrates the tap of low-temperature resistance string through the SS control signal control calibration high temperature resistance string tap in the external world with the connection of high temperature comparer negative input end, control and connects with low temperature comparer positive input terminal; Under calibration high temperature, make said high temperature comparer output high temperature alarm signal, thereby confirm a calibration high temperature trim values through the trim values that changes external fine setting control signal; Under calibration low temperature, make said low temperature comparer output low-temperature warning signal through the trim values that changes external fine setting control signal; Thereby confirm a calibration low temperature trim values; Said calibration low temperature trim values and calibration high temperature trim values are averaged; As trim values to said semifixed resistor, the resistance of said semifixed resistor is finely tuned, realize calibration to the integrated circuit temperature sensing circuit.
Calibration high temperature is lower than safe high temperature, and calibration low temperature is higher than safe low temperature, and calibration high temperature is higher than calibration low temperature.
Integrated circuit temperature sensing circuit of the present invention; The resistance string that connects the positive temperature coefficient (PTC) current source is provided with the tap of safe high temperature resistance string, the tap of safe low-temperature resistance string, the tap of calibration high temperature resistance string, the tap of calibration low-temperature resistance string; And selected on-off circuit is set; When needs carry out timing to the integrated circuit temperature sensing circuit; SS control signal control calibration high temperature resistance string tap through the external world connects with low temperature comparer positive input terminal with the connection of high temperature comparer negative input end, the tap of control calibration low-temperature resistance string; Under calibration high temperature, make said high temperature comparer output high temperature alarm signal, thereby confirm calibration high temperature fine setting (trimming) value through the trim values that changes external fine setting control signal; Under calibration low temperature, make said low temperature comparer output low-temperature warning signal through the trim values that changes external fine setting control signal; Thereby confirm calibration low temperature fine setting (trimming) value; Said calibration low temperature fine setting (trimming) value and calibration high temperature fine setting (trimming) value are averaged; As trim values to said semifixed resistor r, the resistance of said semifixed resistor r is finely tuned, realize calibration to the integrated circuit temperature sensing circuit.Because the linearity of temperature sensing circuit; After specific probe temperature calibration; The temperature that needs to detect is also calibrated thereupon; Integrated circuit temperature sensing circuit of the present invention because calibration low temperature approaches the board probe temperature with calibration high temperature, thereby can be realized calibration to the integrated circuit temperature sensing circuit easily.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is done further explain.
Fig. 1 is a temperature sensing circuit schematic diagram in the integrated circuit;
Fig. 2 is a common integrated circuit temperature sensing circuit figure;
Fig. 3 is an integrated circuit temperature sensing circuit schematic diagram of the present invention;
Fig. 4 is integrated circuit temperature sensing circuit one an embodiment synoptic diagram of the present invention.
Embodiment
Integrated circuit temperature sensing circuit of the present invention; As shown in Figure 3; Temperature sensing circuit is set in integrated circuit, comprises a positive temperature coefficient (PTC) current source, a resistance string R2; One semifixed resistor r; One negative temperature coefficient potential circuit, a selected on-off circuit, low temperature comparer and high temperature comparer two comparers; Said positive temperature coefficient (PTC) current source connects said resistance string R2 one end; Said semifixed resistor r one end of another termination of said resistance string R2, said semifixed resistor r other end ground connection is provided with the tap of safe high temperature resistance string, the tap of safe low-temperature resistance string, the tap of calibration high temperature resistance string, the tap of calibration low-temperature resistance string on said resistance string R2; The resistance that the resistance that the tap of safe high temperature resistance string is held to said semifixed resistor r less than the tap of calibration high temperature resistance string to the resistance of said semifixed resistor r end is held to said semifixed resistor r less than the tap of safety low-temperature resistance string to the resistance of said semifixed resistor r end less than the tap of calibration low-temperature resistance string; The tap of said safe high temperature resistance string, the tap of calibration high temperature resistance string connect said high temperature comparer negative input end through selected on-off circuit, and the tap of said safe low-temperature resistance string, the tap of calibration low-temperature resistance string connect said low temperature comparer positive input terminal through selected on-off circuit, said negative temperature coefficient potential circuit output termination said high temperature comparer positive input terminal and low temperature comparer negative input end;
Said integrated circuit temperature sensing circuit, the external fine setting control signal of ability changes the resistance that external fine setting control signal trim values can change said semifixed resistor r; The external SS control signal of ability; When needs are calibrated the integrated circuit temperature sensing circuit; Connect said high temperature comparer negative input end and calibrate high temperature resistance string tap and be connected said low temperature comparer positive input terminal and the tap of calibration low-temperature resistance string through external SS control signal control selected on-off circuit; When needs carry out temperature detection to integrated circuit, connect said high temperature comparer negative input end with the tap of safe high temperature resistance string and be connected said low temperature comparer positive input terminal and the tap of safe low-temperature resistance string through external SS control signal control selected on-off circuit.
Under design point; When the temperature in the integrated circuit is safe high temperature; Voltage Vptath in the tap of safe high temperature resistance string equals the voltage Vbe of said negative temperature coefficient potential circuit output terminal; Voltage Vptath in the tap of safe high temperature resistance string is lower than the voltage Vbe of said negative temperature coefficient potential circuit output terminal, and when the temperature in the integrated circuit was higher than safe high temperature, the voltage Vptath in the tap of safe high temperature resistance string was higher than the voltage Vbe of said negative temperature coefficient potential circuit output terminal; Said high temperature comparer output this moment high temperature alarm signal; When the temperature in the integrated circuit was safe low temperature, the voltage Vptatl in the tap of safe low-temperature resistance string equaled the voltage Vbe of said negative temperature coefficient potential circuit output terminal, when the temperature in the integrated circuit is higher than safe low temperature; Voltage Vptatl in the tap of safe low-temperature resistance string is higher than the voltage Vbe of said negative temperature coefficient potential circuit output terminal; When the temperature in the integrated circuit was lower than safe low temperature, the voltage Vptatl in the tap of safe low-temperature resistance string was lower than the voltage Vbe of said negative temperature coefficient potential circuit output terminal, said low temperature comparer output this moment low-temperature warning signal.
Under design point; When the temperature in the integrated circuit is calibration high temperature; Voltage Vtesth in the tap of calibration high temperature resistance string equals the voltage Vbe of said negative temperature coefficient potential circuit output terminal; When the temperature in the integrated circuit was calibration low temperature, the voltage Vtestl in the tap of calibration low-temperature resistance string equaled the voltage Vbe of said negative temperature coefficient potential circuit output terminal.Calibration high temperature is lower than safe high temperature, and calibration low temperature is higher than safe low temperature, and calibration high temperature is higher than calibration low temperature, calibrates high temperature usually a little more than the board probe temperature, and calibration low temperature is a little less than the board probe temperature.The good embodiment of one religion, the safe high temperature of integrated circuit is 120 ℃, and safe low temperature is-40 ℃, and the board probe temperature is 55 ℃, and calibration high temperature is got 62 ℃, and calibration low temperature is got 48 ℃.
When needs carry out temperature detection to integrated circuit, connect said high temperature comparer negative input end with the tap of safe high temperature resistance string and be connected said low temperature comparer positive input terminal and the tap of safe low-temperature resistance string through external SS control signal control selected on-off circuit.So; When integrated circuit is carried out temperature detection; When the temperature in the integrated circuit is higher than safe high temperature; Voltage Vptath in the tap of said safe high temperature resistance string is higher than the voltage Vbe of said negative temperature coefficient potential circuit output terminal, and said high temperature comparer output high temperature alarm signal is when the temperature in the integrated circuit is lower than safe low temperature; Voltage Vptath in the tap of said safe low-temperature resistance string is lower than the voltage Vbe of said negative temperature coefficient potential circuit output terminal, said low temperature comparer output low-temperature warning signal.
When needs are calibrated the integrated circuit temperature sensing circuit, connect said high temperature comparer negative input end and calibrate high temperature resistance string tap and be connected said low temperature comparer positive input terminal and the tap of calibration low-temperature resistance string through external SS control signal control selected on-off circuit; Under calibration high temperature, change external fine setting control signal fine setting (trimming) value, when said high temperature comparer is exported the high temperature alarm signal, confirm calibration high temperature fine setting (trimming) value; Under calibration low temperature, when said low temperature comparer is exported the low temperature alarm signal, confirm calibration low temperature fine setting (trimming) value; Said calibration low temperature fine setting (trimming) value and calibration high temperature fine setting (trimming) value are averaged,, the resistance of said semifixed resistor r is finely tuned, realize calibration the integrated circuit temperature sensing circuit as trim values to said semifixed resistor r.
Integrated circuit temperature sensing circuit of the present invention; One embodiment is as shown in Figure 4; Integrated circuit temperature sensing circuit among Fig. 4; Comprise metal-oxide-semiconductor proportional current mirror, an operational amplifier A 1, PNP pipe Q1, the 2nd PNP pipe Q2, the 3rd PNP pipe Q3, first resistance R 1, a resistance string R2, a semifixed resistor r, a selected on-off circuit, two comparers, said MOS proportional current mirror comprises the PMOS first metal-oxide-semiconductor MP1, the PMOS second metal-oxide-semiconductor MP2, PMOS the 3rd metal-oxide-semiconductor MP3, PMOS the 4th metal-oxide-semiconductor MP4, and wherein the breadth length ratio example of the first metal-oxide-semiconductor MP1, the second metal-oxide-semiconductor MP2, the 3rd metal-oxide-semiconductor MP3, the 4th metal-oxide-semiconductor MP4 is 1: 1: k: 1; K is a proportionality constant; Their source electrode all connects voltage source, and their grid all connects together and connects said operational amplifier output terminal, and the drain electrode of the first metal-oxide-semiconductor MP1 connects an end of said operational amplifier A 1 positive input terminal and first resistance R 1; The emitter of another termination the one PNP pipe Q1 of first resistance R 1; The drain electrode of the second metal-oxide-semiconductor MP2 connects the emitter of said operational amplifier A 1 negative input end and the 2nd PNP pipe Q2, base stage, the grounded collector of PNP pipe Q1 and the 2nd PNP pipe Q2, and the drain electrode of PMOS the 3rd metal-oxide-semiconductor MP3 connects said resistance string R2 one end; Said semifixed resistor r one end of another termination of said resistance string R2; Said semifixed resistor r other end ground connection, the drain electrode output positive temperature coefficient (PTC) electric current of said PMOS the 3rd metal-oxide-semiconductor MP3, PMOS the 4th metal-oxide-semiconductor MP4 drain electrode connects the 3rd PNP pipe Q3 emitter; Base stage and the grounded collector of the 3rd PNP pipe Q3, the negative temperature coefficient voltage Vbe of the about 0.7V of emitter output of said the 3rd PNP pipe Q3.Said integrated circuit temperature sensing circuit; The external fine setting control signal of ability; Change the resistance that fine setting control signal trim values can change said semifixed resistor r; Said resistance string R2 is provided with the tap of safe high temperature resistance string, the tap of safe low-temperature resistance string, the tap of calibration high temperature resistance string, the tap of calibration low-temperature resistance string; The tap of said safe high temperature resistance string, the tap of safe low-temperature resistance string, the tap of calibration high temperature resistance string, the tap of calibration low-temperature resistance string connect said selected on-off circuit; One of said two comparer are as the low temperature comparer; One as the high temperature comparer; Said high temperature comparer negative input end, the said selected on-off circuit of said low temperature comparer positive input termination, said high temperature comparer positive input terminal, said low temperature comparer negative input end connect the emitter of said the 3rd PNP pipe Q3, the external SS control signal of said selected on-off circuit; When needs are calibrated the integrated circuit temperature sensing circuit; Connect said high temperature comparer negative input end with calibration high temperature resistance string tap and be connected said low temperature comparer positive input terminal and the tap of calibration low-temperature resistance string through external SS control signal control selected on-off circuit, when needs carry out temperature detection to integrated circuit, control selected on-off circuit through external SS control signal and connect said high temperature comparer negative input end with the tap of safe high temperature resistance string and be connected said low temperature comparer positive input terminal and the tap of safe low-temperature resistance string.
Integrated circuit temperature sensing circuit of the present invention; The resistance string that connects the positive temperature coefficient (PTC) current source is provided with the tap of safe high temperature resistance string, the tap of safe low-temperature resistance string, the tap of calibration high temperature resistance string, the tap of calibration low-temperature resistance string; And selected on-off circuit is set; When needs carry out timing to the integrated circuit temperature sensing circuit; SS control signal control calibration high temperature resistance string tap through the external world connects with low temperature comparer positive input terminal with the connection of high temperature comparer negative input end, the tap of control calibration low-temperature resistance string; Under calibration high temperature, make said high temperature comparer output high temperature alarm signal, thereby confirm calibration high temperature fine setting (trimming) value through the trim values that changes external fine setting control signal; Under calibration low temperature, make said low temperature comparer output low-temperature warning signal through the trim values that changes external fine setting control signal; Thereby confirm calibration low temperature fine setting (trimming) value; Said calibration low temperature fine setting (trimming) value and calibration high temperature fine setting (trimming) value are averaged; As trim values to said semifixed resistor r, the resistance of said semifixed resistor r is finely tuned, realize calibration to the integrated circuit temperature sensing circuit.Because the linearity of temperature sensing circuit; After specific probe temperature calibration; The temperature that needs to detect is also calibrated thereupon; Integrated circuit temperature sensing circuit of the present invention because calibration low temperature approaches the board probe temperature with calibration high temperature, thereby can be realized calibration to the integrated circuit temperature sensing circuit easily.

Claims (6)

1. an integrated circuit temperature sensing circuit is characterized in that, comprises a positive temperature coefficient (PTC) current source, a resistance string, a semifixed resistor, a negative temperature coefficient potential circuit, a selected on-off circuit, low temperature comparer and high temperature comparer;
Said positive temperature coefficient (PTC) current source connects said resistance string one end; Said semifixed resistor one end of another termination of said resistance string; Said semifixed resistor other end ground connection; On said resistance string, be provided with the tap of safe high temperature resistance string, the tap of safe low-temperature resistance string, the tap of calibration high temperature resistance string, the tap of calibration low-temperature resistance string; The resistance that said semifixed resistor end is arrived in the tap of safe high temperature resistance string arrives the resistance of said semifixed resistor end less than calibrating the tap of high temperature resistance string less than the tap of safety low-temperature resistance string to the resistance of said semifixed resistor end less than the tap of calibration low-temperature resistance string to the resistance of said semifixed resistor end; The tap of said safe high temperature resistance string, the tap of calibration high temperature resistance string connect said high temperature comparer negative input end through said selected on-off circuit; The tap of said safe low-temperature resistance string, the tap of calibration low-temperature resistance string connect said low temperature comparer positive input terminal through said selected on-off circuit, said negative temperature coefficient potential circuit output termination said high temperature comparer positive input terminal and low temperature comparer negative input end;
Said integrated circuit temperature sensing circuit, the external fine setting control signal of ability changes the resistance that external fine setting control signal trim values can change said semifixed resistor,
Said integrated circuit temperature sensing circuit; The external SS control signal of ability; Can control said selected on-off circuit through external SS control signal and connect said high temperature comparer negative input end and calibration high temperature resistance string tap and be connected said low temperature comparer positive input terminal and the tap of calibration low-temperature resistance string, perhaps control said selected on-off circuit and connect said high temperature comparer negative input end with the tap of safe high temperature resistance string and be connected said low temperature comparer positive input terminal and the tap of safe low-temperature resistance string.
2. integrated circuit temperature sensing circuit according to claim 1; It is characterized in that; Under design point, when the temperature in the integrated circuit was safe high temperature, the voltage in the tap of safe high temperature resistance string equaled the voltage of said negative temperature coefficient potential circuit output terminal; When the temperature in the integrated circuit is safe low temperature; Voltage in the tap of safe low-temperature resistance string equals the voltage of said negative temperature coefficient potential circuit output terminal, and when the temperature in the integrated circuit was calibration high temperature, the voltage in the tap of calibration high temperature resistance string equaled the voltage of said negative temperature coefficient potential circuit output terminal; When the temperature in the integrated circuit was calibration low temperature, the voltage in the tap of calibration low-temperature resistance string equaled the voltage of said negative temperature coefficient potential circuit output terminal.
3. integrated circuit temperature sensing circuit according to claim 1 and 2; It is characterized in that, comprise metal-oxide-semiconductor proportional current mirror, an operational amplifier, PNP pipe, the 2nd PNP pipe, the 3rd PNP pipe, first resistance, a resistance string, a semifixed resistor, a selected on-off circuit, two comparers;
Said MOS proportional current mirror comprises PMOS first metal-oxide-semiconductor, PMOS second metal-oxide-semiconductor, PMOS the 3rd metal-oxide-semiconductor, PMOS the 4th metal-oxide-semiconductor; Their source electrode all connects voltage source, and their grid all connects together and connects said operational amplifier output terminal, and the drain electrode of first metal-oxide-semiconductor connects an end of the said operational amplifier positive input terminal and first resistance; The emitter of another termination the one PNP pipe of first resistance; The drain electrode of second metal-oxide-semiconductor connects the emitter of said operational amplifier negative input end and the 2nd PNP pipe, base stage, the grounded collector of PNP pipe and the 2nd PNP pipe, and the drain electrode of PMOS the 3rd metal-oxide-semiconductor connects said resistance string one end; Said semifixed resistor one end of another termination of said resistance string; Said semifixed resistor other end ground connection, the drain electrode output positive temperature coefficient (PTC) electric current of said PMOS the 3rd metal-oxide-semiconductor, the drain electrode of PMOS the 4th metal-oxide-semiconductor connects the 3rd PNP pipe emitter; The base stage and the grounded collector of the 3rd PNP pipe, the emitter output negative temperature coefficient voltage of said the 3rd PNP pipe;
Said integrated circuit temperature sensing circuit, the external fine setting control signal of ability changes the resistance that fine setting control signal trim values can change said semifixed resistor;
Said resistance string is provided with the tap of safe high temperature resistance string, the tap of safe low-temperature resistance string, the tap of calibration high temperature resistance string, the tap of calibration low-temperature resistance string; The resistance that said semifixed resistor end is arrived in the tap of safe high temperature resistance string arrives the resistance of said semifixed resistor end less than calibrating the tap of high temperature resistance string less than the tap of safety low-temperature resistance string to the resistance of said semifixed resistor end less than the tap of calibration low-temperature resistance string to the resistance of said semifixed resistor end; The tap of said safe high temperature resistance string, the tap of safe low-temperature resistance string, the tap of calibration high temperature resistance string, the tap of calibration low-temperature resistance string connect said selected on-off circuit; One of said two comparer are as the low temperature comparer; One as the high temperature comparer; Said high temperature comparer negative input end, the said selected on-off circuit of said low temperature comparer positive input termination, said high temperature comparer positive input terminal, said low temperature comparer negative input end connect the emitter of said the 3rd PNP pipe;
The external SS control signal of said selected on-off circuit; Can control selected on-off circuit and connect said high temperature comparer negative input end and calibration high temperature resistance string tap and be connected said low temperature comparer positive input terminal and the tap of calibration low-temperature resistance string, perhaps control selected on-off circuit and connect said high temperature comparer negative input end with the tap of safe high temperature resistance string and be connected said low temperature comparer positive input terminal and the tap of safe low-temperature resistance string.
4. the calibration steps of the described integrated circuit temperature sensing circuit of claim 1; It is characterized in that, calibrate the tap of low-temperature resistance string through the SS control signal control calibration high temperature resistance string tap in the external world with the connection of high temperature comparer negative input end, control and connect with low temperature comparer positive input terminal; Under calibration high temperature, make said high temperature comparer output high temperature alarm signal, thereby confirm a calibration high temperature trim values through the trim values that changes external fine setting control signal; Under calibration low temperature, make said low temperature comparer output low-temperature warning signal through the trim values that changes external fine setting control signal; Thereby confirm a calibration low temperature trim values; Said calibration low temperature trim values and calibration high temperature trim values are averaged; As trim values to said semifixed resistor, the resistance of said semifixed resistor is finely tuned, realize calibration to the integrated circuit temperature sensing circuit.
5. the calibration steps of integrated circuit temperature sensing circuit according to claim 4 is characterized in that, calibration high temperature is lower than safe high temperature, and calibration low temperature is higher than safe low temperature, and calibration high temperature is higher than calibration low temperature.
6. the calibration steps of integrated circuit temperature sensing circuit according to claim 5 is characterized in that, the safe high temperature of integrated circuit is 120 ℃, and safe low temperature is-40 ℃, and calibration high temperature is got 62 ℃, and calibration low temperature is got 48 ℃.
CN2009100577696A 2009-08-20 2009-08-20 Temperature detection circuit of integrated circuit and calibration method thereof Active CN101995301B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9015516B2 (en) 2011-07-18 2015-04-21 Hewlett-Packard Development Company, L.P. Storing event data and a time value in memory with an event logging module

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103050423B (en) * 2012-12-20 2016-05-04 上海华虹宏力半导体制造有限公司 The detection method of wafer temperature
CN104422542B (en) * 2013-08-28 2017-11-14 东莞赛微微电子有限公司 A kind of temperature sensing circuit and electronic equipment
CN104515611B (en) * 2013-09-29 2019-05-31 中兴通讯股份有限公司 A kind of temperature-sensitive circuit and temperature sensor
JP6436728B2 (en) * 2014-11-11 2018-12-12 エイブリック株式会社 Temperature detection circuit and semiconductor device
CN104833439B (en) * 2015-04-07 2017-12-19 青岛歌尔声学科技有限公司 A kind of temperature sensing circuit and the electronic equipment with the circuit
CN106468600B (en) * 2015-08-19 2019-02-12 中芯国际集成电路制造(上海)有限公司 Correcting circuit and device, temperature sensing circuit and method, test method
CN107422777A (en) * 2017-05-16 2017-12-01 四川和芯微电子股份有限公司 Ptat current source
US11493389B2 (en) * 2018-09-28 2022-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Low temperature error thermal sensor
CN113125024B (en) * 2019-12-31 2023-12-29 钜泉光电科技(上海)股份有限公司 Low noise temperature detection circuit and method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1815737A (en) * 2004-11-05 2006-08-09 索尼计算机娱乐公司 Integrated circuit die including a temperature detection circuit, and system and methods for calibrating the temperature detection circuit
CN1950716A (en) * 2004-03-04 2007-04-18 爱特梅尔股份有限公司 Method and apparatus of temperature compensation for integrated circuit chip using on-chip sensor and computation means
US7410293B1 (en) * 2006-03-27 2008-08-12 Altera Corporation Techniques for sensing temperature and automatic calibration on integrated circuits
US7524107B1 (en) * 2006-09-29 2009-04-28 National Semiconductor Corporation Dual purpose output thermostat
CN101452048A (en) * 2007-11-30 2009-06-10 上海华虹Nec电子有限公司 Integrated circuit chip temperature test device and method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1950716A (en) * 2004-03-04 2007-04-18 爱特梅尔股份有限公司 Method and apparatus of temperature compensation for integrated circuit chip using on-chip sensor and computation means
CN1815737A (en) * 2004-11-05 2006-08-09 索尼计算机娱乐公司 Integrated circuit die including a temperature detection circuit, and system and methods for calibrating the temperature detection circuit
US7410293B1 (en) * 2006-03-27 2008-08-12 Altera Corporation Techniques for sensing temperature and automatic calibration on integrated circuits
US7524107B1 (en) * 2006-09-29 2009-04-28 National Semiconductor Corporation Dual purpose output thermostat
CN101452048A (en) * 2007-11-30 2009-06-10 上海华虹Nec电子有限公司 Integrated circuit chip temperature test device and method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9015516B2 (en) 2011-07-18 2015-04-21 Hewlett-Packard Development Company, L.P. Storing event data and a time value in memory with an event logging module
US9418027B2 (en) 2011-07-18 2016-08-16 Hewlett Packard Enterprise Development Lp Secure boot information with validation control data specifying a validation technique
US9465755B2 (en) 2011-07-18 2016-10-11 Hewlett Packard Enterprise Development Lp Security parameter zeroization
US9483422B2 (en) 2011-07-18 2016-11-01 Hewlett Packard Enterprise Development Lp Access to memory region including confidential information

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