CN113125024B - Low noise temperature detection circuit and method - Google Patents
Low noise temperature detection circuit and method Download PDFInfo
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- CN113125024B CN113125024B CN201911413703.6A CN201911413703A CN113125024B CN 113125024 B CN113125024 B CN 113125024B CN 201911413703 A CN201911413703 A CN 201911413703A CN 113125024 B CN113125024 B CN 113125024B
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- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
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Abstract
The invention provides a low-noise temperature detection circuit and a method, comprising the following steps: the first triode is connected between the drain electrode of the first PMOS tube and the ground; the second triode is connected between the first end of the first resistor and the ground, and the second end of the first resistor is connected with the drain electrode of the second PMOS tube; the source electrodes of the first PMOS tube and the second PMOS tube are connected with a power supply voltage; the operational amplifier is respectively connected with the drains of the first PMOS tube and the second PMOS tube, and the output end of the operational amplifier is connected with the grid electrodes of the first PMOS tube and the second PMOS tube; and one end of the second resistor is connected with the drain electrode of the second PMOS tube, and the other end of the second resistor is grounded. Generating a positive temperature coefficient current based on the first triode, the second triode and the first resistor to obtain a detection voltage proportional to absolute temperature; and the width-to-length ratio of the first PMOS tube and the second PMOS tube is adjusted, and the resistance value of the second resistor is adjusted to reduce output noise. The invention effectively reduces the low-frequency noise of the temperature detection circuit on the basis of not needing a complex structure and an extra area, and is suitable for a low-noise circuit.
Description
Technical Field
The present invention relates to the field of integrated circuit design, and in particular, to a low noise temperature detection circuit and method.
Background
The temperature is a physical quantity representing the cold and hot degree of an object, and no place exists in daily life and industrial production of people, and the temperature is not related. Particularly in the field of integrated circuits, with the continuous development of integrated circuits, the reliability requirements of the integrated circuits are higher and higher, and the temperature is an important parameter affecting the performance of the integrated circuits, so that the temperature needs to be detected and further controlled to improve the performance of the integrated circuits.
As shown in fig. 1, a typical temperature detection circuit in the prior art is realized based on a PTAT (Proportional to Absolute Temperature) circuit, and based on two bipolar transistors, which operate at unequal current densities, the difference between their base-emitter voltages is proportional to absolute temperature, and thus a positive temperature coefficient voltage is obtained. Base-emitter voltage V of bipolar transistor BE Can be used as a voltage reference for detecting temperature changes.
Base-emitter voltage V of bipolar transistor BE May significantly affect the performance of the low noise circuit. For example, if a high-precision a/D converter uses the voltage as a reference to compare with an analog signal, noise of the reference is directly applied to the input terminal; even if a large capacitance is added between the output and ground, the low frequency 1/f noise component cannot be suppressed, which is a serious difficulty in low noise applications.
Therefore, how to reduce the base-emitter current of bipolar transistorsPressure V BE The output noise of (c) has become one of the problems to be solved by those skilled in the art.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a low noise temperature detection circuit and method for solving the problem of large output noise of the base-emitter voltage of the bipolar transistor in the prior art.
To achieve the above and other related objects, the present invention provides a low noise temperature detection circuit, including at least: the circuit comprises a first triode, a second triode, a first resistor, a first PMOS tube, a second PMOS tube, an operational amplifier and a second resistor;
the first triode is connected between the drain electrode of the first PMOS tube and the ground, and the source electrode of the first PMOS tube is connected with the power supply voltage;
the second triode is connected between the first end of the first resistor and the ground, the second end of the first resistor is connected with the drain electrode of the second PMOS tube, and the source electrode of the second PMOS tube is connected with the power supply voltage;
the first input end and the second input end of the operational amplifier are respectively connected with the drains of the first PMOS tube and the second PMOS tube, and the output end of the operational amplifier is connected with the grids of the first PMOS tube and the second PMOS tube;
one end of the second resistor is connected with the drain electrode of the second PMOS tube, and the other end of the second resistor is grounded;
the ratio of the width to length ratio of the first PMOS tube to the second PMOS tube is N, and N is a real number larger than 1.
Optionally, the first triode and the second triode are PNP triodes; the base electrode and the collector electrode of the first triode are grounded, and the emitter electrode of the first triode is connected with the drain electrode of the first PMOS tube; and the base electrode and the collector electrode of the second triode are grounded, and the emitter electrode is connected with the first resistor.
Optionally, the first triode and the second triode are NPN triodes; the emitter electrode of the first triode is grounded, and the base electrode and the collector electrode of the first triode are connected with the drain electrode of the first PMOS tube; and the emitter electrode of the second triode is grounded, and the base electrode and the collector electrode of the second triode are connected with the first resistor.
More optionally, an emission junction area ratio of the first triode and the second triode is 1: n, where n is a real number greater than 1.
To achieve the above and other related objects, the present invention provides a low noise temperature detection method, based on the low noise temperature detection circuit, the low noise temperature detection method at least includes:
generating a positive temperature coefficient current based on the first triode, the second triode and the first resistor, and further obtaining a detection voltage proportional to absolute temperature;
and adjusting the ratio of the width to length ratio of the first PMOS tube to the second PMOS tube and the resistance of the second resistor to reduce output noise.
Optionally, the noise contributed by the first PMOS transistor to the base-emitter voltage of the first triode satisfies the following relationship:
wherein, (V) BE ,P1) 2 Noise contributing to the base-emitter voltage of the first transistor for the first PMOS transistor, V BE For the base-emitter voltage of the first triode, P1 is the first PMOS tube, k is Boltzmann constant, T is Kelvin absolute temperature, gm1 is the transconductance of the first PMOS tube, gm2 is the transconductance of the second PMOS tube, C ox A gate oxide capacitance per unit area W p1 L is the channel width of the first PMOS tube p1 For the channel length of the first PMOS transistor, f is frequency, rx1 is the equivalent impedance of the first triode, and Rx2 is the equivalent impedance of the second triode, the first resistor and the second resistor.
Optionally, the noise contributed by the second PMOS transistor to the base-emitter voltage of the first triode satisfies the following relationship:
wherein, (V) BE ,P2) 2 Noise contributing to the base-emitter voltage of the first transistor for the second PMOS transistor, V BE For the base-emitter voltage of the first transistor, P2 is the second PMOS transistor, k is Boltzmann constant, T is Kelvin absolute temperature, gm1 is the transconductance of the first PMOS transistor, gm2 is the transconductance of the second PMOS transistor, C ox A gate oxide capacitance per unit area W p2 L is the channel width of the second PMOS tube p2 For the channel length of the second PMOS transistor, f is frequency, rx1 is the equivalent impedance of the first triode, and Rx2 is the equivalent impedance of the second triode, the first resistor and the second resistor.
Optionally, the noise contributed by the first resistor to the base-emitter voltage of the first transistor satisfies the following relationship:
wherein, (V) BE ,R1) 2 Noise contributing to the base-emitter voltage of the first transistor for the first resistor, V BE The base-emitter voltage of the first triode is represented by k, the k is a Boltzmann constant, T is Kelvin absolute temperature, R1 is the resistance of the first resistor, R2 is the resistance of the second resistor, gm1 is the transconductance of the first PMOS tube, gm2 is the transconductance of the second PMOS tube, and Rx1 is the equivalent impedance of the first triode.
Optionally, the noise contributed by the second resistor to the base-emitter voltage of the first transistor satisfies the following relationship:
wherein, (V) BE ,R2) 2 Noise contributing to the base-emitter voltage of the first transistor for the second resistor, V BE The voltage of the base electrode and the emitter electrode of the first triode is that k is Boltzmann constant, T is Kelvin absolute temperature, R1 is the resistance value of the first resistor, R2 is the resistance value of the second resistor, R Q2 For the equivalent impedance of the second triode, gm1 is the transconductance of the first PMOS, gm2 is the transconductance of the second PMOS, rx1 is the equivalent impedance of the first triode, and Rx2 is the equivalent impedance of the second triode, the first resistor, and the second resistor.
As described above, the low noise temperature detection circuit and method of the present invention have the following advantages:
the low-noise temperature detection circuit and the method of the invention effectively reduce the low-frequency noise of the temperature detection circuit on the basis of not needing complex structures and additional areas, and are suitable for low-noise circuits.
Drawings
Fig. 1 is a schematic diagram of a temperature detection circuit in the prior art.
Fig. 2 is a schematic diagram of a low noise temperature detection circuit according to the present invention.
FIG. 3 shows a schematic diagram of noise analysis at 1 Hz-100 KHz for a conventional temperature detection circuit.
FIG. 4 shows a schematic diagram of the noise analysis of the low noise temperature detection circuit of the present invention at 1 Hz-100 KHz.
Description of element reference numerals
1. Low noise temperature detection circuit
11. Operational amplifier
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
Please refer to fig. 2-4. It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
As shown in fig. 2, the present invention provides a low noise temperature detection circuit 1, the low noise temperature detection circuit 1 comprising: the first transistor Q1, the second transistor Q2, the first resistor R1, the first PMOS transistor P1, the second PMOS transistor P2, the operational amplifier 11 and the second resistor R2.
As shown in fig. 2, the first triode Q1 is connected between the drain of the first PMOS transistor P1 and ground, and the second triode Q2 is connected between the first end of the first resistor R1 and ground.
Specifically, in this embodiment, the first transistor Q1 and the second transistor Q2 are PNP transistors; the base electrode and the collector electrode of the first triode Q1 are grounded, and the emitter electrode is connected with the drain electrode of the first PMOS tube P1; the base electrode and the collector electrode of the second triode Q2 are grounded, and the emitter electrode is connected with the first resistor R1. In practical use, the first transistor Q1 and the second transistor Q2 may be NPN transistors; the emitter of the first triode Q1 is grounded, and the base and the collector are connected with the drain electrode of the first PMOS tube P1; the emitter of the second triode Q2 is grounded, and the base electrode and the collector electrode are connected with the first resistor R1. Any device capable of realizing temperature detection is suitable for the invention, and the connection relation can be adaptively adjusted based on the specific device, and is not described in detail herein.
More specifically, the ratio of the emitter junction area of the first transistor Q1 to the emitter junction area of the second transistor Q2 is 1: n, where n is a real number greater than 1.
As shown in fig. 2, the source electrode of the first PMOS P1 is connected to a power supply voltage, and the gate electrode is connected to the output end of the operational amplifier 11; the second end of the first resistor R1 is connected with the drain electrode of the second PMOS tube P2; and a source electrode of the second PMOS tube P2 is connected with the power supply voltage, and a grid electrode is connected with the output end of the operational amplifier 11.
Specifically, the ratio of the width to length ratios of the first PMOS transistor P1 to the second PMOS transistor P2 is N, where N is a real number greater than 1, and the specific value of N may be set according to the actual needs, which is not limited herein. The ratio of the width to the length of the PMOS tube in the prior art is 1.
As shown in fig. 2, the first input end and the second input end of the operational amplifier 11 are respectively connected to the drains of the first PMOS transistor P1 and the second PMOS transistor P2, and the output end is connected to the gates of the first PMOS transistor P1 and the second PMOS transistor P2.
Specifically, in this embodiment, the inverting input end of the operational amplifier 11 is connected to the drain electrode of the PMOS transistor P1, the non-inverting input end is connected to the drain electrode of the second PMOS transistor P2, and the output end is connected to the gates of the first PMOS transistor P1 and the second PMOS transistor P2. The correspondence between the polarity of the input terminal of the operational amplifier 11 and the input signal can be adjusted, and the same logic can be realized by adding an inverter, which is not limited to the embodiment.
As shown in fig. 2, one end of the second resistor R2 is connected to the drain of the second PMOS transistor P2, and the other end is grounded.
The invention also provides a low-noise temperature detection method based on the low-noise temperature detection circuit 1, which comprises the following steps:
generating a positive temperature coefficient current based on the first triode Q1, the second triode Q2 and the first resistor R1, and further obtaining a detection voltage proportional to absolute temperature;
and adjusting the ratio of the width-to-length ratio of the first PMOS tube P1 to the second PMOS tube P2 and the resistance of the second resistor R2 to reduce output noise.
Specifically, the voltage on the first resistor R1 is a difference value between the first triode Q1 and the second triode Q2, the current on the first resistor R1 has a positive temperature coefficient, and a voltage proportional to the absolute temperature is obtained based on the second PMOS transistor P2. And adjusting output noise based on the first PMOS tube P1, the second PMOS tube P2 and the second resistor R2.
Specifically, the base-emitter voltage V of the first triode Q1 by the first PMOS transistor P1, the second PMOS transistor P2, the first resistor R1 and the second resistor R2 is calculated respectively BE Wherein the architecture of the operational amplifier 11 is the same as in the prior art, and therefore the effect of noise inside the operational amplifier 11 on the output noise is approximately the same as in the prior art, and no calculation is made here.
The first PMOS transistor P1 is connected to the base-emitter voltage V of the first triode BE The contributed noise satisfies the following relationship:
the second PMOS transistor P2 is used for applying the voltage V of the base electrode and the emitter electrode of the first triode BE The contributed noise satisfies the following relationship:
the first resistor R1 is used for controlling the voltage V of the base electrode and the emitter electrode of the first triode BE The contributed noise satisfies the following relationship:
the second resistor R2 is used for applying the voltage V to the base-emitter electrode of the first triode BE The contributed noise satisfies the following relationship:
the noise at the input end of the operational amplifier 11 is applied to the voltage of the base-emitter electrode of the first triode Q1V BE The contributed noise satisfies the following relationship:
wherein, (V) BE ,P1) 2 For the first PMOS transistor P1 to the base-emitter voltage V of the first triode Q1 BE Noise contributed; (V) BE ,P2) 2 For the second PMOS transistor P2 to the base-emitter voltage V of the first triode BE Noise contributed; (V) BE ,R1) 2 For the first resistor R1 to the base-emitter voltage V of the first triode BE Noise contributed; (V) BE ,R2) 2 For the second resistor R2 to the base-emitter voltage V of the first triode BE Noise contributed; k is boltzmann constant; t is Kelvin absolute temperature; gamma is a technological parameter; gm1 is the transconductance of the first PMOS tube P1; gm2 is the transconductance of the second PMOS tube P2; c (C) ox A gate oxide capacitance per unit area; w (W) p1 The channel width of the first PMOS tube P1; l (L) p1 The channel length of the first PMOS tube P1; w (W) p2 The channel width of the second PMOS tube P2; l (L) p2 The channel length of the second PMOS tube P2 is the channel length; f is the frequency; rx1 is the equivalent impedance of the first triode Q1; rx2 is the equivalent impedance of the second triode Q2, the first resistor R1 and the second resistor R2, and satisfies the following conditions:r1 is the resistance value of the first resistor R1; r2 is the resistance value of the second resistor R2; r is R Q2 Equivalent impedance of the second triode Q2; n is noise; (V) n ,tot) 2 Base-emitter voltage V for noise-to-triode at input of operational amplifier in the prior art BE Noise contributed.
Because of different structures, the first PMOS transistor P1, the second PMOS transistor P2, the first resistor R1 and the second resistor R2 are used for applying the base-emitter voltage of the first triode Q1V BE The amount of noise reduction contributed is not particularly contrasted. The operational amplifier 11 has the same structure, so that the contribution of the operational amplifier 11 to noise in the present invention and the prior art is compared, in this embodiment, the resistance of the second resistor R2 is adjusted such that Rx 2=rx 1, becauseThe noise at the input of the operational amplifier 11 is applied to the base-emitter voltage V of the first transistor Q1 BE The noise of the contribution is reduced to the original +.>Base-emitter voltage V of each device to the first triode Q1 BE The addition of the contributed noise gives a total output noise, from which it can be seen that the total output noise is greatly reduced.
Fig. 3 shows the noise analysis of the conventional temperature detection circuit of fig. 1 at 1 Hz-100 KHz, fig. 4 shows the noise analysis of the low noise temperature detection circuit 1 of the present invention at 1 Hz-100 KHz, and it can be known from the graph that the total output noise of the prior art is 4.84104e-10, and the total output noise of the present application is 7.26133e-11, so that the output noise of the present invention is greatly reduced, and when the device parameters of the present invention are further optimized, lower output noise can be obtained, which is not described herein.
In summary, the present invention provides a low noise temperature detection circuit and method, including: the circuit comprises a first triode, a second triode, a first resistor, a first PMOS tube, a second PMOS tube, an operational amplifier and a second resistor; the first triode is connected between the drain electrode of the first PMOS tube and the ground, and the source electrode of the first PMOS tube is connected with the power supply voltage; the second triode is connected between the first end of the first resistor and the ground, the second end of the first resistor is connected with the drain electrode of the second PMOS tube, and the source electrode of the second PMOS tube is connected with the power supply voltage; the first input end and the second input end of the operational amplifier are respectively connected with the drains of the first PMOS tube and the second PMOS tube, and the output end of the operational amplifier is connected with the grids of the first PMOS tube and the second PMOS tube; one end of the second resistor is connected with the drain electrode of the second PMOS tube, and the other end of the second resistor is grounded; the ratio of the width to length ratio of the first PMOS tube to the second PMOS tube is N, and N is a real number larger than 1. Generating a positive temperature coefficient current based on the first triode, the second triode and the first resistor, and further obtaining a detection voltage proportional to absolute temperature; and adjusting the ratio of the width to length ratio of the first PMOS tube to the second PMOS tube and the resistance of the second resistor to reduce output noise. The low-noise temperature detection circuit and the method of the invention effectively reduce the low-frequency noise of the temperature detection circuit on the basis of not needing complex structures and additional areas, and are suitable for low-noise circuits. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (9)
1. A low noise temperature detection circuit, the low noise temperature detection circuit comprising at least: the circuit comprises a first triode, a second triode, a first resistor, a first PMOS tube, a second PMOS tube, an operational amplifier and a second resistor;
the first triode is connected between the drain electrode of the first PMOS tube and the ground, and the source electrode of the first PMOS tube is connected with the power supply voltage;
the second triode is connected between the first end of the first resistor and the ground, the second end of the first resistor is connected with the drain electrode of the second PMOS tube, and the source electrode of the second PMOS tube is connected with the power supply voltage;
the first input end and the second input end of the operational amplifier are respectively connected with the drains of the first PMOS tube and the second PMOS tube, and the output end of the operational amplifier is connected with the grids of the first PMOS tube and the second PMOS tube;
one end of the second resistor is connected with the drain electrode of the second PMOS tube, and the other end of the second resistor is grounded and used for reducing low-frequency noise of the low-noise temperature detection circuit;
the ratio of the width to length ratio of the first PMOS tube to the second PMOS tube is N, and N is a real number larger than 1.
2. The low noise temperature detection circuit of claim 1, wherein: the first triode and the second triode are PNP triodes; the base electrode and the collector electrode of the first triode are grounded, and the emitter electrode of the first triode is connected with the drain electrode of the first PMOS tube; and the base electrode and the collector electrode of the second triode are grounded, and the emitter electrode is connected with the first resistor.
3. The low noise temperature detection circuit of claim 1, wherein: the first triode and the second triode are NPN triodes; the emitter electrode of the first triode is grounded, and the base electrode and the collector electrode of the first triode are connected with the drain electrode of the first PMOS tube; and the emitter electrode of the second triode is grounded, and the base electrode and the collector electrode of the second triode are connected with the first resistor.
4. A low noise temperature detection circuit according to any one of claims 1 to 3, wherein: the area ratio of the emitting junction of the first triode and the second triode is 1: n, where n is a real number greater than 1.
5. A low noise temperature detection method based on the low noise temperature detection circuit according to any one of claims 1 to 4, characterized in that the low noise temperature detection method comprises at least:
generating a positive temperature coefficient current based on the first triode, the second triode and the first resistor, and further obtaining a detection voltage proportional to absolute temperature;
and adjusting the ratio of the width to length ratio of the first PMOS tube to the second PMOS tube and the resistance of the second resistor to reduce output noise.
6. The low noise temperature detection method according to claim 5, wherein: the noise contributed by the first PMOS tube to the base-emitter voltage of the first triode meets the following relation:
wherein, (V) BE ,P1) 2 Noise contributing to the base-emitter voltage of the first transistor for the first PMOS transistor, V BE P1 is the base-emitter voltage of the first triode, k is the Boltzmann constant, T is Kelvin absolute temperature, gamma is the technological parameter, gm1 is the transconductance of the first PMOS tube, gm2 is the transconductance of the second PMOS tube, C ox A gate oxide capacitance per unit area W p1 L is the channel width of the first PMOS tube p1 For the channel length of the first PMOS transistor, f is frequency, rx1 is the equivalent impedance of the first triode, and Rx2 is the equivalent impedance of the second triode, the first resistor and the second resistor.
7. The low noise temperature detection method according to claim 5, wherein: the noise contributed by the second PMOS transistor to the base-emitter voltage of the first triode satisfies the following relation:
wherein, (V) BE ,P2) 2 Noise contributing to the base-emitter voltage of the first transistor for the second PMOS transistor, V BE The base-emitter voltage of the first triode is P2 is the second PMOS tube, k is Boltzmann constant, T is Kelvin absolute temperature, gamma is the technological parameter, gm1 is theTransconductance of the first PMOS tube, gm2 is transconductance of the second PMOS tube, C ox A gate oxide capacitance per unit area W p2 L is the channel width of the second PMOS tube p2 For the channel length of the second PMOS transistor, f is frequency, rx1 is the equivalent impedance of the first triode, and Rx2 is the equivalent impedance of the second triode, the first resistor and the second resistor.
8. The low noise temperature detection method according to claim 5, wherein: the noise contributed by the first resistor to the base-emitter voltage of the first transistor satisfies the following relationship:
wherein, (V) BE ,R1) 2 Noise contributing to the base-emitter voltage of the first transistor for the first resistor, V BE The base-emitter voltage of the first triode is represented by k, the k is a Boltzmann constant, T is Kelvin absolute temperature, R1 is the resistance of the first resistor, R2 is the resistance of the second resistor, gm1 is the transconductance of the first PMOS tube, gm2 is the transconductance of the second PMOS tube, and Rx1 is the equivalent impedance of the first triode.
9. The low noise temperature detection method according to claim 5, wherein: the noise contributed by the second resistor to the base-emitter voltage of the first transistor satisfies the following relationship:
wherein, (V) BE ,R2) 2 Noise contributing to the base-emitter voltage of the first transistor for the second resistor, V BE For the base-emitter voltage of the first triode, k is Boltzmann constant, T isKelvin absolute temperature, R1 is the resistance of the first resistor, R2 is the resistance of the second resistor, R Q2 For the equivalent impedance of the second triode, gm1 is the transconductance of the first PMOS, gm2 is the transconductance of the second PMOS, rx1 is the equivalent impedance of the first triode, and Rx2 is the equivalent impedance of the second triode, the first resistor, and the second resistor.
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