CN101984506B - Method for preparing thin film transistor by two-time photo-etching - Google Patents
Method for preparing thin film transistor by two-time photo-etching Download PDFInfo
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- CN101984506B CN101984506B CN2010105040990A CN201010504099A CN101984506B CN 101984506 B CN101984506 B CN 101984506B CN 2010105040990 A CN2010105040990 A CN 2010105040990A CN 201010504099 A CN201010504099 A CN 201010504099A CN 101984506 B CN101984506 B CN 101984506B
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Abstract
The invention provides a method for preparing a thin film transistor by two-time photo-etching, and belongs to semiconductor technology and flat display field. The method comprises the following steps of: growing a semiconductor channel layer on a glass or plastic substrate; then growing a grid insulating dielectric layer; performing first photo-etching and etching to define patterns of the grid insulating dielectric layer; and growing a layer of conductive thin film material, and forming a grid electrode, a source electrode and a drain electrode by photo-etching and etching. The method for preparing the thin film transistor by two-time photo-etching technology reduces the photo-etching times, and simplifies the processes so as to improve the work efficiency and reduce the manufacturing cost. The invention provides the simple, convenient and feasible thin film transistor preparing method for the industries of liquid crystal display and the like.
Description
Technical field
The present invention relates to the manufacture method that a kind of secondary photoetching realizes thin-film transistor structure, belong to semiconductor technology flat panel display field.
Background technology
Along with the develop rapidly of semiconductor technology, the integrated level of semiconductor device is increasingly high, and the characteristic size of device is more and more littler, and preparation technology also becomes increasingly complex.In recent years, the thin-film transistor technologies that is applicable to the flat panel display industry is also in fast development.Thin-film transistor is one of kind of field-effect transistor, and main production method is the various film of deposition on substrate, like the metal or the compound electrode layer of semiconductor channel layer, gate insulation dielectric layer and conduction.Thin-film transistor is that deposition layer of semiconductor film is regarded conductivity channel layer on substrate.The thin-film transistor major part of using at present is amorphous silicon hydride (a-Si:H) thin-film transistor, and the polycrystalline SiTFT technology is also among constantly improving.The performance of amorphous silicon film transistor is more stable, but mobility is low.The mobility of polycrystalline SiTFT improves a lot, but the preparation temperature of polycrystalline SiTFT is high, the lack of homogeneity of large-area preparation.In addition; Amorphous silicon film transistor and polycrystalline SiTFT are all to photaesthesia, and great changes will take place for device performance under the illumination condition, therefore; In flat panel display, need to introduce black matrix, this complexity that has also increased preparation technology has reduced the aperture opening ratio of display device simultaneously.In order further to improve the performance of thin-film transistor, solve problems such as black matrix, aperture opening ratio, brightness, the international semiconductor technical field has started the research boom of transparent electronics in recent years.Transparent electronics is exactly to utilize transparent electronic material to make a kind of semiconductor technology of electronic device and interlock circuit thereof.A collection of researchers such as the John Wager of Oregon State University have also carried out deep research to transparent electronics, and have obtained some progress.At present to the transparent semiconductor investigation of materials more be zinc oxide material.Zinc oxide material has lot of advantages: be easy to preparation, utilize methods such as magnetron sputtering method, molecular beam epitaxy (MBE) method, sol-gel (Sol-Gel) method, MOCVD method can prepare well behaved zinc oxide material; Preparation temperature is low, and the temperature of general preparation can be controlled at 500
oIn the C, on glass substrate; Transparency is high, and zinc oxide is wide-band gap material, and energy gap is about 3.37eV, is transparent in visible-range therefore; Electric property is good, and the electric property of zinc oxide material is good, and carrier mobility is far above amorphous silicon; Nontoxic, environment-friendly materials, zinc oxide material are a kind of nontoxic environment-friendly materials; Material price is low, and Zinc material is aboundresources on earth, and is cheap, can reduce the manufacturing cost of product effectively.Scientists is thought; Transparent electronics will develop into an emerging electron trade that efficient is higher, price is more cheap; Its range of application is quite extensive, comprises from the flat-panel monitor to the solar cell, many-sided field such as mobile phone, flexible electronic paper, organic light emitting display.
The current thin film transistor technology mainly adopts photoetching process five times, and photoetching process is also arranged four times.Photoetching process is the key technology in the thin-film transistor technology, is one of difficult point in the whole preparation process, and the photoetching process complexity is directly connected to the manufacturing cost of thin-film transistor.
Summary of the invention
The object of the present invention is to provide a kind of preparation method of new thin-film transistor.Utilize the secondary photoetching to realize thin-film transistor structure.The gate insulation dielectric layer of the first lithographic definition thin-film transistor, photoetching for the second time defines grid, source end and drain terminal electrode simultaneously.This method will reduce the complexity of prepared greatly, improve make efficiency effectively, thereby reduce the manufacturing cost of thin-film transistor.
Technical scheme of the present invention is following:
The structure of the thin-film transistor of the present invention's preparation is as shown in Figure 1, comprises substrate, gate insulation dielectric layer, gate electrode and source-drain electrode, is formed on the substrate, and substrate is glass or plastics; Said semiconductor channel layer is positioned on the glass substrate, and said gate insulation dielectric layer is positioned on the semiconductor channel layer, and said gate electrode is positioned on the gate medium.Said source-drain electrode is positioned on the semiconductor channel layer.
The technical process that the present invention prepares thin-film transistor only adopts Twi-lithography, specifically may further comprise the steps:
(1) growth layer of semiconductor channel layer on glass or plastic at first, semiconductor channel layer is formed by amorphous silicon, polysilicon or compound semiconductor materials;
(2) growth one deck gate insulation dielectric layer, the gate insulation dielectric layer is formed by silicon dioxide, silicon nitride or high-K gate dielectric insulating material;
(3) carry out the photoetching first time and etching definition gate insulation dielectric layer figure then;
(4) growth layer of conductive film material is formed by metal A l, Cu, Mo, Ti or transparent compound conductive film material, and photoetching and etching form gate electrode, source termination electrode and drain terminal electrode then.
The present invention adopts the secondary photoetching to form the technology of thin-film transistor, has reduced the photoetching number of times, has simplified processing step, thereby has improved operating efficiency, has reduced manufacturing cost.For industries such as liquid crystal display provide simple and feasible film crystal tube preparation method.
Description of drawings
Fig. 1 is the cross-sectional view that the described secondary photoetching of the specific embodiment of the invention forms thin-film transistor;
Fig. 2 is the plan structure sketch map that the described secondary photoetching of the specific embodiment of the invention forms thin-film transistor;
Fig. 3 is the main technique step of a manufacture method of thin-film transistor of the present invention, wherein:
Fig. 3 (a) has illustrated the sectional view of substrate;
Fig. 3 (b) has illustrated the processing step that the semiconductor conductivity channel layer forms;
Fig. 3 (c) has illustrated the processing step of gate insulation dielectric layer growth;
Fig. 3 (d) has illustrated grid, source, drain electrode layer deposit and patterned processing step.
Embodiment
Through instance the present invention is further specified below.It should be noted that the purpose of publicizing and implementing example is to help further to understand the present invention, but it will be appreciated by those skilled in the art that: in spirit that does not break away from the present invention and accompanying claims and scope, various replacements and modification all are possible.Therefore, the present invention should not be limited to the disclosed content of embodiment, and the scope that the present invention requires to protect is as the criterion with the scope that claims define.
Thin-film transistor of the present invention is formed on the substrate 1, and is as depicted in figs. 1 and 2.This thin-film transistor comprises semiconductor conductivity channel layer 2, one gate insulation dielectric layers, 3, one gate electrodes (G) 4, a source termination electrode (S) 4 and a drain terminal electrode (D) 4.Said semiconductor conductivity channel layer 2 is positioned on the glass substrate 1; Said gate insulation dielectric layer 3 is positioned on the semiconductor conductivity channel layer 2; Said gate electrode (G) 4 is positioned on the gate insulation dielectric layer 3, and said source termination electrode (S) 4 is positioned on the semiconductor conductivity channel layer 2 with drain terminal electrode (D) 5.
One instantiation of the manufacture method of said thin-film transistor, may further comprise the steps to shown in Fig. 3 (d) by Fig. 3 (a):
Shown in Fig. 3 (a), substrate is selected transparent glass substrate or plastics 1 for use.
Shown in Fig. 3 (b), with the layers of semiconductor thin-film materials 2 of rf magnetron sputtering deposit one deck 50～500 nanometer thickness, semiconductor channel layer is formed by amorphous silicon, polysilicon or compound semiconductor materials.
Shown in Fig. 3 (c), utilize PECVD on semiconductor channel layer, grow layer of silicon dioxide or insulating silicon nitride material, the gate insulation dielectric layer 3 of formation, photoetching and etching form gate insulation medium figure then.
Shown in Fig. 3 (d), the metal film of magnetron sputtering growth one deck 100～200 nanometer thickness or transparent compound conductive layer be photoetching and etching formation gate electrode (G) 4, source termination electrode (S) 5 and drain terminal electrode D (5) then.
Though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention.Any those of ordinary skill in the art; Do not breaking away under the technical scheme scope situation of the present invention; All the method for above-mentioned announcement capable of using and technology contents are made many possible changes and modification to technical scheme of the present invention, or are revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical scheme of the present invention, all still belongs in the scope of technical scheme protection of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (7)
1. the preparation method of a thin-film transistor, its step comprises:
1) growth layer of semiconductor channel layer on glass or plastic;
2) growth one deck gate insulation dielectric layer;
3) carry out the photoetching first time and etching definition gate insulation dielectric layer figure;
4) growth layer of conductive film material, photoetching and etching form gate electrode, source termination electrode and drain terminal electrode then.
2. the method for claim 1 is characterized in that, semiconductor channel layer is formed by amorphous silicon, polysilicon or compound semiconductor materials.
3. the method for claim 1 is characterized in that, the gate insulation dielectric layer adopts silicon dioxide, silicon nitride or high-K gate dielectric insulating material.
4. the method for claim 1 is characterized in that, conductive film material is metal A l, Cu, Mo, Ti or transparent compound conductive film.
5. method as claimed in claim 2 is characterized in that, with the semiconductive thin film of rf magnetron sputtering deposit 50～500 nanometer thickness.
6. method as claimed in claim 3 is characterized in that, utilizes PECVD growth layer of silicon dioxide or insulating silicon nitride material.
7. method as claimed in claim 4 is characterized in that, the metal or the transparent compound conductive film of magnetron sputtering growth one deck 100～200 nanometer thickness.
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| CN2010105040990A CN101984506B (en) | 2010-10-12 | 2010-10-12 | Method for preparing thin film transistor by two-time photo-etching |
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| CN2010105040990A CN101984506B (en) | 2010-10-12 | 2010-10-12 | Method for preparing thin film transistor by two-time photo-etching |
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| CN101984506B true CN101984506B (en) | 2012-07-04 |
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| CN102629621B (en) * | 2012-01-09 | 2015-08-12 | 京东方科技集团股份有限公司 | A kind of circuit, array base palte and manufacture method, display |
| CN102981359B (en) * | 2012-11-28 | 2013-12-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | Photoetching method |
| CN106229320B (en) * | 2016-09-06 | 2019-04-05 | 武汉华星光电技术有限公司 | The manufacturing method of LTPS array substrate |
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| CN100449391C (en) * | 2006-08-04 | 2009-01-07 | 北京京东方光电科技有限公司 | Thin-film transistor LCD pixel structure and manufacturing method therefor |
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