CN101970595A - A chemical mechanical polishing liquid - Google Patents
A chemical mechanical polishing liquid Download PDFInfo
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- CN101970595A CN101970595A CN2009801031536A CN200980103153A CN101970595A CN 101970595 A CN101970595 A CN 101970595A CN 2009801031536 A CN2009801031536 A CN 2009801031536A CN 200980103153 A CN200980103153 A CN 200980103153A CN 101970595 A CN101970595 A CN 101970595A
- Authority
- CN
- China
- Prior art keywords
- polishing fluid
- acid
- polishing
- abrasive grains
- removal rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000005498 polishing Methods 0.000 title claims abstract description 56
- 239000007788 liquid Substances 0.000 title claims abstract description 8
- 239000000126 substance Substances 0.000 title claims abstract description 7
- 229940123208 Biguanide Drugs 0.000 claims abstract description 16
- 150000004283 biguanides Chemical class 0.000 claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000002245 particle Substances 0.000 claims abstract description 3
- 239000012530 fluid Substances 0.000 claims description 36
- MOFINMJRLYEONQ-UHFFFAOYSA-N [N].C=1C=CNC=1 Chemical class [N].C=1C=CNC=1 MOFINMJRLYEONQ-UHFFFAOYSA-N 0.000 claims description 8
- 239000006061 abrasive grain Substances 0.000 claims description 8
- -1 biguanide compound Chemical class 0.000 claims description 8
- 150000000178 1,2,4-triazoles Chemical class 0.000 claims description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 5
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 150000003839 salts Chemical class 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 150000003852 triazoles Chemical class 0.000 claims description 4
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 150000003536 tetrazoles Chemical class 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- NHOWDZOIZKMVAI-UHFFFAOYSA-N (2-chlorophenyl)(4-chlorophenyl)pyrimidin-5-ylmethanol Chemical compound C=1N=CN=CC=1C(C=1C(=CC=CC=1)Cl)(O)C1=CC=C(Cl)C=C1 NHOWDZOIZKMVAI-UHFFFAOYSA-N 0.000 claims description 2
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical class NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 claims description 2
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical class NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 claims description 2
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 claims description 2
- KJHOZAZQWVKILO-UHFFFAOYSA-N N-(diaminomethylidene)-4-morpholinecarboximidamide Chemical compound NC(N)=NC(=N)N1CCOCC1 KJHOZAZQWVKILO-UHFFFAOYSA-N 0.000 claims description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- 239000000174 gluconic acid Substances 0.000 claims description 2
- 235000012208 gluconic acid Nutrition 0.000 claims description 2
- 229960005389 moroxydine Drugs 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- ICFJFFQQTFMIBG-UHFFFAOYSA-N phenformin Chemical compound NC(=N)NC(=N)NCCC1=CC=CC=C1 ICFJFFQQTFMIBG-UHFFFAOYSA-N 0.000 claims description 2
- MVRGLMCHDCMPKD-UHFFFAOYSA-N 3-amino-1h-1,2,4-triazole-5-carboxylic acid Chemical class NC1=NNC(C(O)=O)=N1 MVRGLMCHDCMPKD-UHFFFAOYSA-N 0.000 claims 1
- 150000003851 azoles Chemical class 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 230000002195 synergetic effect Effects 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 23
- 229920005591 polysilicon Polymers 0.000 description 22
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 description 8
- 239000000654 additive Substances 0.000 description 5
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical class C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 4
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 4
- 239000003002 pH adjusting agent Substances 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000002270 dispersing agent Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000008139 complexing agent Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 150000007530 organic bases Chemical class 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- FRTNIYVUDIHXPG-UHFFFAOYSA-N acetic acid;ethane-1,2-diamine Chemical class CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.NCCN FRTNIYVUDIHXPG-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001412 amines Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 150000001735 carboxylic acids Chemical group 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 1
- PCHPORCSPXIHLZ-UHFFFAOYSA-N diphenhydramine hydrochloride Chemical compound [Cl-].C=1C=CC=CC=1C(OCC[NH+](C)C)C1=CC=CC=C1 PCHPORCSPXIHLZ-UHFFFAOYSA-N 0.000 description 1
- 125000001165 hydrophobic group Chemical group 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229960004329 metformin hydrochloride Drugs 0.000 description 1
- OETHQSJEHLVLGH-UHFFFAOYSA-N metformin hydrochloride Chemical compound Cl.CN(C)C(=N)N=C(N)N OETHQSJEHLVLGH-UHFFFAOYSA-N 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin hydrochloride Natural products CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- ULWHHBHJGPPBCO-UHFFFAOYSA-N propane-1,1-diol Chemical class CCC(O)O ULWHHBHJGPPBCO-UHFFFAOYSA-N 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Substances [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 1
- KNRUQUSSDKZTSQ-UHFFFAOYSA-N tetrazol-1-amine Chemical compound NN1C=NN=N1 KNRUQUSSDKZTSQ-UHFFFAOYSA-N 0.000 description 1
- HADKRTWCOYPCPH-UHFFFAOYSA-M trimethylphenylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C1=CC=CC=C1 HADKRTWCOYPCPH-UHFFFAOYSA-M 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
A chemical mechanical polishing liquid which contains abrasive particles and water. The said polishing liquid further contains biguanides and azoles. The coexistence of biguanides and azoles produces synergistic effect and results in a significantly higher removal rate of polycrystal silicon.
Description
A kind of chemical mechanical polishing liquid
Technical field
The present invention relates to a kind of chemical mechanical polishing liquid in semiconductor fabrication process.Technical background
With continuing to develop for semiconductor technology, and large scale integrated circuit interconnection layer is continuously increased, and the planarization of conductive layer and insulating medium layer becomes particularly critical.The cmp initiated by the 80's of IBM Corporation's twentieth century（CMP) technology is considered as the most efficient method of current global planarizartion.
Cmp（CMP) it is combined into by chemical action and mechanism and two kinds of effects.Its equipment generally carries polishing pad by one（Pad grinding table)（Polishing table), and one be used for carry chip（Wafer grinding head (carrier) composition).Wherein grinding head fixes chip, and then the front of chip is pressed on grinding pad.When carrying out cmp, grinding head is in polishing pad（Pad it is linear on) to move or rotated along the direction of motion as grinding table.At the same time, the oar liquid (slurry) containing grinding agent is dripped to polishing pad（Pad on), and because centrifugal action is laid in polishing pad（Pad on).Chip（Wafer) global planarizartion is realized in surface under double action mechanically and chemically.
According to the difference for chemically-mechanicapolish polishing particular problem to be solved, to polysilicon（Poly silicon) removal rate（Removal rate) there are two kinds of different requirements.
A kind of requirement is the removal rate of polysilicon to be reduced, such as：US 20050130428 reports the polishing fluid of a kind of homopolymerization containing oxirane or expoxy propane or copolymer, to suppress polysilicon removal rate.The hydrophobic group of polymer is considered as to adsorb on polysilicon surface, passivation layer is formd, so as to reduce the removal rate of polysilicon.
Another kind of is the removal rate for improving polysilicon：
US2002032987 discloses a kind of with polishing fluid of the hydramine as additive, to improve polysilicon (Poly silicon) removal rate（Removal rate), wherein preferred 2- (dimethylaminos of additive）The small propyl alcohol of 2- methyl.
US2002151252 disclose it is a kind of contain with multiple carboxylic acid structures complexing agent polishing fluid, for improving polysilicon removal rate, wherein it is preferred that complexing agent be EDTA (ethylenediamine tetra-acetic acids）With DTPA (diethyl pentetic acids）.
EP 1072662 discloses a kind of polishing fluid for the organic matter that delocalization structure is produced containing lone pair electrons and double bond, to improve polysilicon（Poly silicon) removal rate（Removal rate), preferred compound is the compound and its salt of guanidine.
US2006014390 discloses a kind of polishing fluid for being used to improve the removal rate of polysilicon, the additive that it is 4.25% 18.5% grinding agents comprising percentage by weight and percentage by weight is 0.05% 1.5%.Wherein additive is mainly selected from the organic bases such as quaternary ammonium salt, quaternary amine alkali and monoethanolamine.In addition, the polishing fluid also includes nonionic surface active agent, such as homopolymerization of ethylene glycol or propane diols or copolymerization product.Brief summary of the invention
The technical problems to be solved by the invention are to provide a kind of polishing fluid of the invention for being remarkably improved polysilicon removal rate and contain abrasive grains and water, and it also contains biguanide compound and nitrogen azole compounds simultaneously.
Wherein, described biguanide compound is preferably selected from biguanides, melbine, insoral, moroxydine, Ι, Γ-hexyl double [5- (rubigan) biguanides] and one kind or many in the acid-addition salts of above-claimed cpd
Kind.Described acid is preferably hydrochloric acid, phosphoric acid, nitric acid, acetic acid, gluconic acid or sulfonic acid.The content of described biguanide compound is preferably mass percent 0.01 7%.
Wherein, one or more of the described nitrogen azole compounds preferably in triazole and tetrazole and its derivative.The content of described nitrogen azole compounds is preferably mass percent 0.01 15%.
Wherein, described abrasive grains are preferably selected from Si02、 A1203、 Zr02、 Ce02、 Si：、 Fe203、 Ti02And Si3N4In one or more.The particle diameter that the content of described abrasive grains is preferably the abrasive grains described in 0.1 ~ 30%o of mass percent is preferably 20 ~ 150nm, more preferably 30 ~ 120nm.
The polishing fluid of the present invention can also contain this area conventional additives, such as pH adjusting agent and/or dispersant.Described pH adjusting agent may be selected from the one or more in NaOH, KOH, ammonia and organic base；Described dispersant may be selected from the one or more in polyvinyl alcohol, polyacrylic acid, polyacrylamide and PEO；The content of described dispersant is preferably mass percent 0.01% 1%.
The pH scopes of the polishing fluid of the present invention are preferably 8 ~ 12.
Mentioned component is simply mixed evenly, is adjusted with pH adjusting agent to suitable ph, stands the polishing fluid that can be prepared by the present invention.Agents useful for same and raw material of the present invention are commercially available.
The positive effect of the present invention is：The biguanides and nitrogen azole material contained simultaneously in the polishing fluid of the present invention have synergy, are remarkably improved the removal rate of polysilicon.The content of the invention
The present invention is further illustrated below by the mode of embodiment, but is not therefore limited the present invention among described scope of embodiments.
Embodiment 1 11
Table 1 gives the polishing fluid 1 11 of the present invention, is formulated by table, each composition is simply mixed evenly,
Surplus is water, is adjusted with pH adjusting agent to suitable ph, standing can be prepared by each polishing fluid in 30 minutes(The polishing fluid embodiment of the present invention
9 SiO2The 1,2,4- triazoles 0.1 12 of (50nm) 0.1 biguanides 7
1, r-hexyl is double
[5 -（To chlorine 5- carboxyl -3- amino 1,2,4-
10 Si3N4(80nm) 153 10 phenyl）Double triazoles
Guanidine] phosphonic acids
± foretell
1, Γ-hexyl is double
[5- is (to chlorine
11 Si3N4The phenyl of (80nm) 14 3- amino-1,2,4-triazols 9）It is double
Guanidine] sulfonic acid
Salt
Effect example
Table 2 gives contrast polishing example 8 and the polishing fluid 16 of the present invention, is formulated, each composition is simply mixed evenly, surplus is water by table, is adjusted with TMAH to pH=l l, standing can be prepared by each polishing fluid in 30 minutes.Each polishing fluid is used for polishing polycrystalline silicon.Polishing condition is：Polishing machine platform is Logitech (Britain）1PM52 types, 12 inches of politex polishing pads（Pad), 4cm*4cm squares Wafer, the psi of grinding pressure 3, grinding table（Polishing table) 70 revs/min of rotating speed, 150 revs/min of grinding head (carrier) rotation rotating speed, 100 ml of polishing fluid rate of addition/min.Polish results are shown in Table 2.The formula of polishing fluid 16 and polysilicon removal rate silica nitrogen azole compounds polysilicon of contrast polishing example 8 and the present invention go hydrochloride double
The specific materials of polishing fluid (95 ± 5nm) content wt pH removal rates guanidine content wt %
Wt% % (A/min) contrast 11 11 1324
Contrast 21 0.1 \ \ 1 12032 contrasts 31 0.5 \ \ 1 12380 contrasts 41 1 .0 \ \ 1 12390 contrasts 511,2,4- triazoles 0.11 11843 contrasts 611,2,4- triazoles 0.51 12163 contrasts 711,2,4- triazoles 1.01 1 2160
1 10.1 1,2,4- triazoles 0.51 1 3093
2 10.1 1,2,4- triazoles 11 1 4400
3 10.5 1,2,4- triazoles 1 4311
The nitrogen of 3- amino -1,2,4- three
4 0.1 1 4002 azoles
5- carboxyl -3- amino
5 0.1 1 3897
1,2,4- triazoles
Contrast 815- aminotetrazoles 1 2059
6 0.5 5-
1Aminotetrazole 1 4100
1 1
The removal rate of silicon tends to saturation, and maximum is in 2390A/min or so.Continue to increase Metformin hydrochloride content, the removal rate for improving polysilicon is not helped.
Shown by contrast polishing fluid 5,6,7：With 1,2,4- triazole（TAZ) the continuous improvement of content, the removal rate of polysilicon tends to saturation, and maximum is in 2163 A/min or so.Continue to increase TAZ content, the removal rate for improving polysilicon is not helped.
Shown by the polishing fluid 1 ~ 5 and contrast polishing fluid 1,57 of the present invention：Biguanides and triazole have obvious synergy, can significantly increase the removal rate of polysilicon.
Shown by the polishing fluid 6 and contrast polishing fluid 8 of the present invention：Biguanides and tetrazole have obvious synergy, can significantly increase the removal rate of polysilicon.
Claims (11)
- Claim1. a kind of chemical mechanical polishing liquid, it contains abrasive grains and water, it is characterised in that：It also contains biguanide compound and nitrogen azole compounds simultaneously.2. polishing fluid as claimed in claim 1, it is characterised in that：Described biguanide compound is selected from biguanides, melbine, insoral, moroxydine, 1,1, the one or more in-hexyl double [5- (rubigan) biguanides] and the acid-addition salts of above-claimed cpd.3. polishing fluid as claimed in claim 2, it is characterised in that：Described acid is hydrochloric acid, phosphoric acid, nitric acid, acetic acid, gluconic acid or sulfonic acid.4. the polishing fluid as described in claim 1, it is characterised in that：The content of described biguanide compound is mass percent 0.01 7%.5. the polishing fluid as described in claim 1, it is characterised in that：Described nitrogen azole compounds are the one or more in triazole and tetrazole and its derivative.6. polishing fluid as claimed in claim 5, it is characterised in that：Described nitrogen azole compounds are the one or more in 1,2,4- triazoles, 3- amino-1,2,4-triazols, 5- carboxyl -3- amino 1,2,4- triazoles and 5- aminotetrazoles.7. the polishing fluid as described in claim 1, it is characterised in that：The content of described nitrogen azole compounds is mass percent 0.01 15%.8. polishing fluid as claimed in claim 1, it is characterised in that：Described abrasive grains are selected from Si02、 A1203、 Zr02、 Ce02、 SiC、 Fe203、 Ti02And Si3N4In one or more.9. the polishing fluid as described in claim 1, it is characterised in that：The content of described abrasive grains is mass percent 0.1 30%.10. the polishing fluid as described in claim 1, it is characterised in that：The particle diameter of described abrasive grains is 30〜120nm。11. polishing fluid as claimed in claim 1, it is characterised in that：The pH scopes of described polishing fluid are
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200980103153.6A CN101970595B (en) | 2008-01-30 | 2009-01-19 | A chemical mechanical polishing liquid |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100332603A CN101497765A (en) | 2008-01-30 | 2008-01-30 | Chemico-mechanical polishing solution |
| CN200810033260.3 | 2008-01-30 | ||
| PCT/CN2009/000071 WO2009097737A1 (en) | 2008-01-30 | 2009-01-19 | A chemical mechanical polishing liquid |
| CN200980103153.6A CN101970595B (en) | 2008-01-30 | 2009-01-19 | A chemical mechanical polishing liquid |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101970595A true CN101970595A (en) | 2011-02-09 |
| CN101970595B CN101970595B (en) | 2013-05-01 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2008100332603A Pending CN101497765A (en) | 2008-01-30 | 2008-01-30 | Chemico-mechanical polishing solution |
| CN200980103153.6A Active CN101970595B (en) | 2008-01-30 | 2009-01-19 | A chemical mechanical polishing liquid |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2008100332603A Pending CN101497765A (en) | 2008-01-30 | 2008-01-30 | Chemico-mechanical polishing solution |
Country Status (2)
| Country | Link |
|---|---|
| CN (2) | CN101497765A (en) |
| WO (1) | WO2009097737A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104371550A (en) * | 2013-08-14 | 2015-02-25 | 安集微电子（上海）有限公司 | Chemical mechanical polishing liquid for polishing silicon material |
| CN111378372A (en) * | 2018-12-28 | 2020-07-07 | 安集微电子（上海）有限公司 | Application of acetic acid in STI polishing |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5774283B2 (en) * | 2010-04-08 | 2015-09-09 | 株式会社フジミインコーポレーテッド | Polishing composition and polishing method |
| CN102477261B (en) * | 2010-11-26 | 2015-06-17 | 安集微电子（上海）有限公司 | Chemically mechanical polishing liquid |
| CN102533119A (en) * | 2010-12-21 | 2012-07-04 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing liquid containing nitrogen-containing amine compounds |
| KR20140110869A (en) * | 2011-11-25 | 2014-09-17 | 가부시키가이샤 후지미인코퍼레이티드 | Method for polishing alloy material and method for producing alloy material |
| CN104371553B (en) * | 2013-08-14 | 2017-10-13 | 安集微电子（上海）有限公司 | A kind of chemical mechanical polishing liquid and application |
| CN104371552B (en) * | 2013-08-14 | 2017-09-15 | 安集微电子（上海）有限公司 | Application of the silicon-containing organic compound in extension chemical mechanical polishing liquid in abrasive grains stability |
| CN111378973A (en) * | 2018-12-28 | 2020-07-07 | 安集微电子科技（上海）股份有限公司 | Chemical mechanical polishing solution and application thereof |
| CN114080437B (en) * | 2019-08-09 | 2023-10-27 | 巴斯夫欧洲公司 | Composition and method for inhibiting tungsten etching |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE60322695D1 (en) * | 2002-04-30 | 2008-09-18 | Hitachi Chemical Co Ltd | POLISHING FLUID AND POLISHING PROCESS |
| JP2004031443A (en) * | 2002-06-21 | 2004-01-29 | Hitachi Chem Co Ltd | Polishing solution and polishing method |
| US7300480B2 (en) * | 2003-09-25 | 2007-11-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High-rate barrier polishing composition |
| US20050136671A1 (en) * | 2003-12-22 | 2005-06-23 | Goldberg Wendy B. | Compositions and methods for low downforce pressure polishing of copper |
-
2008
- 2008-01-30 CN CNA2008100332603A patent/CN101497765A/en active Pending
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2009
- 2009-01-19 WO PCT/CN2009/000071 patent/WO2009097737A1/en active Application Filing
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104371550A (en) * | 2013-08-14 | 2015-02-25 | 安集微电子（上海）有限公司 | Chemical mechanical polishing liquid for polishing silicon material |
| CN104371550B (en) * | 2013-08-14 | 2018-02-09 | 安集微电子（上海）有限公司 | A kind of chemical mechanical polishing liquid for being used to polish silicon materials |
| CN111378372A (en) * | 2018-12-28 | 2020-07-07 | 安集微电子（上海）有限公司 | Application of acetic acid in STI polishing |
| CN111378372B (en) * | 2018-12-28 | 2022-05-13 | 安集微电子（上海）有限公司 | Application of acetic acid in STI polishing |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2009097737A1 (en) | 2009-08-13 |
| CN101497765A (en) | 2009-08-05 |
| CN101970595B (en) | 2013-05-01 |
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